阅读说明：本技术 具有氢气吸气剂的压电装置 (Piezoelectric device with hydrogen getter ) 是由 陈志明 喻中一 于 2018-11-01 设计创作，主要内容包括：本公开提供一种装置包括衬底、第一层吸气剂材料、第一电极、绝缘元件、第二电极、第一输入-输出电极及第二输入-输出电极。所述第一层吸气剂材料沉积在所述衬底上。所述第一电极形成在第一导电层中,所述第一导电层沉积在所述第一层吸气剂材料上。所述第一层吸气剂材料对于氢气具有比所述第一电极高的吸气能力。所述绝缘元件形成在压电层中,所述压电层沉积在所述第一电极上。所述第二电极形成在第二导电层中,所述第二导电层沉积在所述绝缘元件上。所述第一输入-输出电极导电性地连接到所述第一层吸气剂材料。所述第二输入-输出电极导电性地连接到所述第二电极。(The present disclosure provides an apparatus comprising a substrate, a first layer of getter material, a first electrode, an insulating element, a second electrode, a first input-output electrode, and a second input-output electrode. The first layer of getter material is deposited on the substrate. The first electrode is formed in a first conductive layer deposited on the first layer of getter material. The first layer of getter material has a higher gettering capability for hydrogen than the first electrode. The insulating element is formed in a piezoelectric layer deposited on the first electrode. The second electrode is formed in a second conductive layer deposited on the insulating element. The first input-output electrode is conductively connected to the first layer of getter material. The second input-output electrode is conductively connected to the second electrode.)

1. A piezoelectric device, comprising:

a substrate;

a first layer of getter material deposited on the substrate;

a first electrode formed in a first electrically conductive layer deposited on the first layer of getter material, wherein the first layer of getter material has a higher gettering capability for hydrogen than the first electrode;

an insulating element formed in a piezoelectric layer deposited on the first electrode;

a second electrode formed in a second conductive layer deposited on the insulating element;

a first input-output electrode conductively connected to the first layer of getter material; and

a second input-output electrode conductively connected to the second electrode.

Technical Field

Embodiments of the present invention relate to a piezoelectric device having a hydrogen getter.

Background

Piezoelectric devices, such as piezoelectric actuators, may be used to cause physical movement of physical components in the system under the control of electrical signals. The physical motion generated by the piezoelectric device can be used to control various mechanical and optical systems. Some type of piezoelectric actuator may be used to cause linear motion or other types of motion.

Disclosure of Invention

According to an embodiment of the present invention, a piezoelectric device includes a substrate, a first layer of getter material, a first electrode, an insulating element, a second electrode, a first input-output electrode, and a second input-output electrode. A first layer of getter material is deposited on the substrate. A first electrode is formed in a first conductive layer deposited on the first layer of getter material, wherein the first layer of getter material has a higher gettering capability for hydrogen than the first electrode. The insulating element is formed in a piezoelectric layer deposited on the first electrode. The second electrode is formed in a second conductive layer deposited on the insulating element. A first input-output electrode is conductively connected to the first layer of getter material. A second input-output electrode is conductively connected to the second electrode.

According to an embodiment of the present invention, a piezoelectric device includes a substrate, a first electrode, an insulating member, a second electrode, a first input-output electrode, a second input-output electrode, and a getter material layer. The first electrode is formed in a first conductive layer deposited on the substrate. The insulating element is in a piezoelectric layer deposited on the first electrode. The second electrode is formed in a second conductive layer deposited on the insulating element. A first input-output electrode is conductively connected to the first electrode. A second input-output electrode is conductively connected to the second electrode. A layer of getter material is deposited on the second electrode, wherein the layer of getter material has a greater gettering capacity for hydrogen gas than the second electrode.

According to an embodiment of the present invention, a method of manufacturing a piezoelectric device includes: depositing a first layer of getter material on a substrate; forming a first electrode in a first conductive layer deposited on the first layer of getter material; forming an insulating element in a piezoelectric layer deposited on the first electrode; forming a second electrode in a second conductive layer deposited on the insulating element; forming a first input-output electrode conductively connected to the first layer of getter material; and forming a second input-output electrode conductively connected to the second electrode.

Drawings

Various aspects of the invention are best understood from the following detailed description when read with the accompanying drawing figures. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

Fig. 1 is a cross-sectional view of a piezoelectric device having a getter (getter) according to some embodiments.

Fig. 2A to 2D are device structure sectional views for illustrating a method of manufacturing the piezoelectric device in fig. 1 according to some embodiments.

Fig. 3 is a cross-sectional view of another embodiment of a piezoelectric device having a getter according to some embodiments.

Fig. 4A to 4D are device structure sectional views for illustrating a method of manufacturing the piezoelectric device in fig. 3 according to some embodiments.

Fig. 5 is a cross-sectional view of an embodiment of a piezoelectric device having a getter in an input-output electrode, according to some embodiments.

Fig. 6A to 6D are device structure sectional views for illustrating a method of manufacturing the piezoelectric device in fig. 5 according to some embodiments.

Fig. 7 is a cross-sectional view of another embodiment of a piezoelectric device having a getter in an input-output electrode, according to some embodiments.

Fig. 8A to 8D are device structure sectional views for illustrating a method of manufacturing the piezoelectric device in fig. 7 according to some embodiments.

Fig. 9-12 are cross-sectional views of embodiments of piezoelectric devices having a layer of getter material deposited after a piezoelectric layer is deposited, according to some embodiments.

FIG. 13 is a schematic diagram illustrating one exemplary application of a piezoelectric device according to some embodiments.

Fig. 14 illustrates a flow diagram of some embodiments of a method of forming a piezoelectric device having a getter, according to some embodiments.

[ description of symbols ]

31: a first conductive layer;

32: a second conductive layer;

35: a piezoelectric layer;

40: a substrate;

42: a protective layer;

44: a first opening;

45: a second opening;

51: a first electrode;

52: a second electrode;

55: an insulating member;

61: a first input-output electrode;

62: a second input-output electrode;

81. 82: getter materials

100: a piezoelectric device;

120: a glass substrate;

130: a transparent fluid;

140: a glass film;

150: a light beam;

155: a focal point;

1400: a method;

1402. 1404, 1406, 1408, 1410, 1412, 1414, 1416: and (6) acting.

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first feature over or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in the various examples. Such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms such as "below …," "below …," "lower," "above …," "upper," and the like may be used herein to describe one element or feature's relationship to another (other) element or feature for ease of description. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may have other orientations (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly as well.

Piezoelectric actuators generally include a piezoelectric layer deposited between two conductive layers. A first electrode is formed in the first conductive layer and a second electrode is formed in the second conductive layer. When a voltage is applied between the first and second electrodes, an electric field generated by the applied voltage may cause the piezoelectric layer to stretch or compress in a direction perpendicular to the piezoelectric layer. The stretching and compressing of the piezoelectric layer is translated into a physical displacement. Such physical displacement can be used to control various mechanical and optical systems. The amount of physical displacement generally depends on the voltage applied between the first and second electrodes. Although a piezoelectric actuator may convert such an applied voltage into a precisely controlled physical displacement, the dynamic range of the physical displacement may depend on the magnitude of the voltage that may actually be applied between the first and second electrodes. For many practical applications, the voltage to be applied between the first and second electrodes may be relatively high in order to achieve the desired dynamic range of physical displacement of the control system. Such relatively high voltages may cause reliability problems in the piezoelectric actuator and may increase the probability of failure during device operation and reliability testing. One failure mechanism is due to the presence of hydrogen ions in the piezoelectric material of the piezoelectric device.

When the piezoelectric layer is deposited using a sol-gel process, it is difficult to completely eliminate residual hydrogen ions without occurrence of breakdown degradation due to a hydrogen ion-induced reduction reaction. During the sol-gel process, hydrogen ions may easily accumulate in the piezoelectric material or at the interface between the piezoelectric material and other electrodes, and the accumulated hydrogen ions may induce film delamination (film delamination) and breakdown. The presence of hydrogen ions in the piezoelectric material may also be attributed to a subsequent hydrogen ion-containing process performed after the piezoelectric layer is deposited. Examples of such subsequent hydrogen ion-containing processes include photoresist coating, stripping, and cleaning. These subsequent hydrogen ion-containing processes may increase the amount of residual hydrogen ions in the piezoelectric material and degrade the reliability of piezoelectric devices made from such piezoelectric materials.

When the piezoelectric device includes a piezoelectric layer deposited between a first electrode and a second electrode, one of the causes of the reliability degradation of the piezoelectric device is due to diffusion of hydrogen ions in the piezoelectric material under the influence of an electric field generated by a voltage applied between the first electrode and the second electrode. In one example, when the first electrode is connected to ground and the second electrode is connected to a positive voltage, hydrogen ions in the piezoelectric material may drift toward the first electrode, and the hydrogen ions accumulated in the first electrode may negatively affect the reliability of the piezoelectric device. In another example, when the first electrode is connected to a positive voltage and the second electrode is connected to ground, hydrogen ions in the piezoelectric material may drift toward the second electrode, and the hydrogen ions accumulated in the second electrode may negatively affect the reliability of the piezoelectric device. Even in the presence of residual hydrogen ions in the piezoelectric material used to fabricate the piezoelectric device, it is desirable to improve the reliability of the piezoelectric device.

Fig. 1 is a cross-sectional view of a piezoelectric device having a getter according to some embodiments. The piezoelectric device 100 includes a substrate 40, a first layer of getter material 81, a first electrode 51, a second electrode 52, an insulating element 55, a first input-output electrode 61, and a second input-output electrode 62. A first layer of getter material 81 is deposited on the substrate 40. The first electrode 51 is formed in a first conductive layer deposited on the first layer of getter material 81. The insulating element 55 is formed in a piezoelectric layer deposited on the first electrode 51. The second electrode 52 is formed in a second conductive layer deposited on the insulating element 55. The first input-output electrode 61 is conductively connected to the first layer of getter material 81 and the second input-output electrode 62 is conductively connected to the second electrode 52.

The getter material 81 used in the piezoelectric device 100 generally has a high gettering capability (gettercapacity) for hydrogen gas. Examples of possible materials for use in the getter material 81 include titanium (Ti), barium (Ba), cerium (Ce), lanthanum (La), aluminum (Al), magnesium (Mg), and thorium (Th). The table below lists the getter capacity of some materials with respect to hydrogen. The materials listed in the table include barium (Ba), cerium (Ce), lanthanum (La), and titanium (Ti).

Getter materials	Air suction capacity (Pa-l/mg)
		Barium salt	11.50
(cerium, lanthanum)	6.13
		Titanium (IV)	27.00

In fig. 1, the layered structure of the first electrode 51, the insulating element 55, and the second electrode 52 forms a metal-insulator-metal device. When a voltage is applied between the first input-output electrode 61 and the second input-output electrode 62, the same voltage is applied between the first electrode 51 and the second electrode 52. The electric field due to the applied voltage may cause the insulating element 55 to stretch or compress in a direction perpendicular to the surface of the substrate 40. The stretching and compression of the insulating member 55 translates into physical displacement to control a mechanical system or an optical system.

In fig. 1, when the first input-output electrode 61 is connected to ground and the second input-output electrode 62 is connected to a positive voltage, hydrogen ions in the insulating element 55 formed of a piezoelectric material layer may drift toward the first electrode 51 under the influence of an electric field generated due to the applied voltage. Since the getter material 81 is close to the first electrode 51, the influence of deterioration of the piezoelectric device 100 due to accumulation of hydrogen ions can be reduced. The reliability of the piezoelectric device 100 can be improved due to the getter material 81. In general, the greater the gettering capability for hydrogen gas in the getter material 81, the better the getter material 81 can provide protection for the piezoelectric device 100 from degradation due to hydrogen ions in the insulating element 55. In some embodiments, titanium may be selected as the getter material 81 because titanium has a high gettering capacity for hydrogen of about 27.0 Pa-l/mg.

Fig. 2A to 2D are device structure sectional views for illustrating a method of manufacturing the piezoelectric device 100 in fig. 1 according to some embodiments. As shown in the cross-sectional view in fig. 2A, a substrate 40 is provided. In various embodiments, substrate 40 may be, for example, silicon, glass, silicon dioxide, aluminum oxide, and the like. The first layer of getter material 81 is formed on the substrate 40 using a deposition process such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), or Atomic Layer Deposition (ALD). Next, a first conductive layer 31 is deposited on the first layer of getter material 81, a piezoelectric layer 35 is deposited on the first conductive layer 31, and a second conductive layer 32 is deposited on the piezoelectric layer 35. The first conductive layer 31 and the second conductive layer 32 may each use a deposition tool such as CVD, PVD, or ALDAnd (5) forming. In some embodiments, the first conductive layer 31 can comprise a different material than the first layer getter material 81. Examples of materials for use in the first conductive layer 31 or the second conductive layer 32 include, but are not limited to, molybdenum (Mo), titanium nitride (TiN), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), and the like, and combinations thereof. In some embodiments, the piezoelectric layer 35 can be formed using a sol-gel process. Examples of materials for use in the piezoelectric layer 35 include, but are not limited to, aluminum nitride (AlN), lead zirconate titanate (PZT), gallium orthophosphate single crystal (GaPO)₄) Lankesai (La, Langasite)₃Ga.₅SiO₁₄) Barium titanate (BaTiO)₃) Potassium niobate (KNbO)₃) Lithium niobate (LiNbO)₃) Lithium tantalate (LiTaO)₃) Sodium tungstate (Na)₂WO₃) Zinc oxide (ZnO), and the like, and combinations thereof.

In the next step, as shown in the cross-sectional view in fig. 2B, there are three layers of material above the layer of getter material 81. The three material layers-second conductive layer 32, piezoelectric layer 35, and first conductive layer 31-are selectively etched according to the designed pattern to form a metal-insulator-metal device comprising second electrode 52, insulating element 55, and first electrode 51. In some embodiments, a mask layer having a designed pattern is formed atop the second conductive layer 32 prior to selectively etching the three material layers above the one layer of getter material 81. The mask layer having the designed pattern may be a patterned photoresist layer or a dielectric material layer formed using a photolithography process. In some embodiments, the three material layers above the one layer of getter material 81 are etched using a dry etchant (dry etch) in a directional etching process. In some embodiments, the last of the three material layers, second conductive layer 32, may be etched using a dry etchant with high selectivity between the material in second conductive layer 32 and getter material 81 to form a clean profile at the surface of the one layer of getter material 81.

In a next step, as shown in the cross-sectional view in fig. 2C, a protective layer 42 is deposited on the second electrode 52 and the exposed portions of the getter material 81. The protective layer 42 also covers the side surfaces of the second electrode 52, the insulating element 55, and the first electrode 51. Protective layer 42 may be formed using Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), or any other suitable technique. Examples of materials that may be used for protective layer 42 include silicon dioxide and silicon nitride. Other dielectric materials may also be used for the protective layer 42.

In the next step, as shown in the cross-sectional view in fig. 2D, a first opening 44 and a second opening 45 are respectively made in the protective layer 42 to contact the first input-output electrode 61 and the second input-output electrode 62. These two openings may be made using an etching process after patterning a photoresist layer atop protective layer 42 using a photolithographic technique.

Next, in the next step, as shown in the cross-sectional view in fig. 1, the first input-output electrode 61 is made to be in conductive contact with the first electrode 51 through the first opening 44, and the second input-output electrode 62 is made to be in conductive contact with the second electrode 52 through the second opening 45. The first input-output electrode 61 and the second input-output electrode 62 provide input terminals for receiving a voltage to control the physical displacement of such a functional piezoelectric device 100.

Fig. 3 is a cross-sectional view of another embodiment of a piezoelectric device having a getter according to some embodiments. Similar to the piezoelectric device in fig. 1, the piezoelectric device 100 in fig. 3 includes a substrate 40, a first layer of getter material 81, a first electrode 51, a second electrode 52, an insulating element 55, a first input-output electrode 61, and a second input-output electrode 62. The second electrode 52, the insulating element 55 and the first electrode 51 form a metal-insulator-metal device in both the device shown in fig. 3 and the device shown in fig. 1. However, in the device shown in fig. 3, the geometric configuration of the metal-insulator-metal device formed is different from that of the device shown in fig. 1. The second electrode 52, the insulating element 55 and the first electrode 51 in the device of fig. 1 have substantially the same physical layout. In contrast, the second electrode 52, the insulating element 55, and the first electrode 51 in the device of fig. 3 each have a different physical layout. As shown in fig. 3, the insulating member 55 covers a portion of the first electrode 51, and the second electrode 52 covers a portion of the insulating member 55. In contrast, in the device shown in fig. 1, the insulating member 55 covers the entire upper interface of the first electrode 51, and the second electrode 52 covers the entire upper interface of the insulating member 55.

Similar to the device of fig. 1, the getter material 81 used in the piezoelectric device 100 of fig. 3 generally has a high gettering capability for hydrogen. Examples of possible materials for use in the getter material 81 include titanium (Ti), barium (Ba), cerium (Ce), lanthanum (La), aluminum (Al), magnesium (Mg), and thorium (Th). During operation, when the first input-output electrode 61 is connected to ground and the second input-output electrode 62 is connected to a positive voltage, hydrogen ions in the insulating element 55 (which is formed of a piezoelectric material layer) may drift toward the first electrode 51 under the influence of an electric field generated by the applied voltage. Since the getter material 81 is close to the first electrode 51, the influence of deterioration of the piezoelectric device 100 due to accumulation of hydrogen ions can be reduced. The reliability of the piezoelectric device 100 can be improved due to the getter material 81.

Fig. 4A to 4D are device structure sectional views for illustrating a method of manufacturing the piezoelectric device 100 in fig. 3 according to some embodiments. As shown in the cross-sectional view in fig. 4A, a substrate 40 is provided and a first layer of getter material 81 is formed on the substrate 40 using a deposition process. Next, a first conductive layer 31 is deposited on the first layer of getter material 81, a piezoelectric layer 35 is deposited on the first conductive layer 31, and a second conductive layer 32 is deposited on the piezoelectric layer 35.

In the next step, as shown in the cross-sectional view in fig. 4B, there are three layers of material above the layer of getter material 81. These three layers are the second conductive layer 32, the piezoelectric layer 35 and the first conductive layer 31. The three layers are etched layer by layer to form a metal-insulator-metal device. First, the second conductive layer 32 is etched according to a designed pattern to form the second electrode 52. Next, the piezoelectric layer 35 is etched according to the designed pattern to form the insulating member 55. Subsequently, another etching process is performed in which the first conductive layer 31 is etched according to the designed pattern to form the first electrode 51. In some embodiments, each of the design patterns for forming the second electrode 52, the insulating element 55, and the first electrode 51 may be defined by a photoresist mask formed using a photolithography technique. After these etching processes, the metal-insulator-metal device has a staircase shaped stacked-structure.

In a next step, as shown in the cross-sectional view in fig. 4C, a protective layer 42 is deposited on the second electrode 52, the exposed portion of the insulating element 55, the exposed portion of the first electrode 51, and the exposed portion of the getter material 81. The protective layer 42 also covers the side surfaces of the second electrode 52, the insulating element 55, and the first electrode 51.

In the next step, as shown in the cross-sectional view in fig. 4D, a first opening 44 and a second opening 45 are respectively made in the protective layer 42 to contact the first input-output electrode 61 and the second input-output electrode 62. Next, in the next step, as shown in the cross-sectional view in fig. 3, the first input-output electrode 61 is made to be in conductive contact with the first electrode 51 through the first opening 44, and the second input-output electrode 62 is made to be in conductive contact with the second electrode 52 through the second opening 45. The final product is the piezoelectric device 100 in fig. 3, and the piezoelectric device 100 in fig. 3 is fabricated using the process as illustrated in fig. 4A to 4D.

Fig. 5 is a cross-sectional view of an embodiment of a piezoelectric device having a getter in an input-output electrode, according to some embodiments. The piezoelectric device 100 includes a substrate 40, a first electrode 51, a second electrode 52, an insulating element 55, a first input-output electrode 61, and a second input-output electrode 62. The first electrode 51 is formed in a first conductive layer deposited on the substrate 40. The insulating element 55 is formed in a piezoelectric layer deposited on the first electrode 51. The second electrode 52 is formed in a second conductive layer deposited on the insulating element 55. The first input-output electrode 61 is conductively connected to the first electrode 51, and the second input-output electrode 62 is conductively connected to the second electrode 52. The second input-output electrode 62 also functions as a getter, so that a material having a high gettering capability for hydrogen can be selected for forming the second input-output electrode 62. In some embodiments, the second input-output electrode 62 is formed of a titanium (Ti) layer. In some embodiments, the second input-output electrode 62 may include a getter material such as titanium (Ti), barium (Ba), cerium (Ce), lanthanum (La), aluminum (Al), magnesium (Mg), thorium (Th), or a combination thereof.

During operation, when the first input-output electrode 61 is connected to a positive voltage and the second input-output electrode 62 is connected to ground, hydrogen ions in the insulating element 55 (which is formed of a piezoelectric material layer) may drift toward the second electrode 52 under the influence of an electric field generated by the applied voltage. Due to the getter material in the second input-output electrode 62, the influence of deterioration on the piezoelectric device 100 due to accumulation of hydrogen ions can be reduced. The reliability of the piezoelectric device 100 can be improved due to the getter material in the second input-output electrode 62.

Fig. 6A to 6D are device structure sectional views for illustrating a method of manufacturing the piezoelectric device 100 in fig. 5 according to some embodiments. As shown in the cross-sectional view in fig. 6A, a substrate 40 is provided and a first conductive layer 31 is deposited on the substrate 40. Next, a piezoelectric layer 35 is deposited on the first conductive layer 31, and a second conductive layer 32 is deposited on the piezoelectric layer 35.

In the next step, as shown in the cross-sectional view in fig. 6B, the second conductive layer 32, the piezoelectric layer 35, and the first conductive layer 31 are etched to form the second electrode 52, the insulating element 55, and the first electrode 51 of the metal-insulator-metal device, respectively.

In a next step, as shown in the cross-sectional view in fig. 6C, a protective layer 42 is deposited on the second electrode 52 and the exposed portion of the first electrode 51. The protective layer 42 also covers the side surfaces of the second electrode 52, the insulating element 55, and the first electrode 51.

In the next step, as shown in the cross-sectional view in fig. 6D, the first opening 44 and the second opening 45 are respectively made in the protective layer 42 to contact the first input-output electrode 61 and the second input-output electrode 62. Next, in the next step, as shown in the cross-sectional view in fig. 5, the first input-output electrode 61 is made to be in conductive contact with the first electrode 51 through the first opening 44, and the second input-output electrode 62 is made to be in conductive contact with the second electrode 52 through the second opening 45. In some embodiments, the second opening 45 is large enough so that the second input-output electrode 62 can make conductive contact with a majority of the upper surface of the second electrode 52. The final product is the piezoelectric device 100 in fig. 5, and the piezoelectric device 100 in fig. 5 is fabricated using the process shown in fig. 6A to 6D.

Fig. 7 is a cross-sectional view of another embodiment of a piezoelectric device having a getter in an input-output electrode, according to some embodiments. Similar to the piezoelectric device in fig. 5, the piezoelectric device 100 in fig. 7 includes a substrate 40, a first electrode 51, a second electrode 52, an insulating member 55, a first input-output electrode 61, and a second input-output electrode 62 containing a getter material. The second electrode 52, the insulating element 55 and the first electrode 51 form a metal-insulator-metal device in both the device shown in fig. 7 and the device shown in fig. 5. However, the geometric configuration of the metal-insulator-metal device formed in the device of fig. 7 is different from that of the device of fig. 5. In addition, the device shown in fig. 7 may have an increased contact area between the second input-output electrode 62 and the upper surface of the second electrode 52 as compared to the device shown in fig. 5. Such increased contact area may increase the effectiveness of second input-output electrode 62 to act as a hydrogen getter. Examples of getter materials that may be used in the second input-output electrode 62 include titanium (Ti), barium (Ba), cerium (Ce), lanthanum (La), aluminum (Al), magnesium (Mg), thorium (Th), or a combination thereof.

Fig. 8A to 8D are device structure sectional views for illustrating a method of manufacturing the piezoelectric device 100 in fig. 7 according to some embodiments. As shown in the cross-sectional view in fig. 8A, a first conductive layer 31 is deposited on a substrate 40, a piezoelectric layer 35 is deposited on the first conductive layer 31, and a second conductive layer 32 is deposited on the piezoelectric layer 35.

In the next step, as shown in the cross-sectional view in fig. 8B, the second conductive layer 32, the piezoelectric layer 35, and the first conductive layer 31 are etched to form the second electrode 52, the insulating element 55, and the first electrode 51 of the metal-insulator-metal device, respectively.

In a next step, as shown in the cross-sectional view in fig. 8C, a protective layer 42 is deposited on the second electrode 52, the exposed portion of the insulating element 55, and the exposed portion of the first electrode 51. The protective layer 42 also covers the side surfaces of the second electrode 52, the insulating element 55, and the first electrode 51.

In the next step, as shown in the cross-sectional view in fig. 8D, the first opening 44 and the second opening 45 are respectively made in the protective layer 42 to contact the first input-output electrode 61 and the second input-output electrode 62. Next, in the next step, as shown in the cross-sectional view in fig. 7, the first input-output electrode 61 is made to be in conductive contact with the first electrode 51 through the first opening 44, and the second input-output electrode 62 is made to be in conductive contact with the second electrode 52 through the second opening 45. In some embodiments, the second opening 45 is large enough so that the second input-output electrode 62 can make conductive contact with a majority of the upper surface of the second electrode 52. The final product is the piezoelectric device 100 in fig. 7, and the piezoelectric device 100 in fig. 7 is fabricated using the process as illustrated in fig. 8A to 8D.

Fig. 9-12 are cross-sectional views of embodiments of piezoelectric devices having a layer of getter material deposited after a piezoelectric layer is deposited, according to some embodiments.

In fig. 9 to 10, the piezoelectric device 100 includes a substrate 40, a first layer of getter material 81, a first electrode 51, a second electrode 52, an insulating element 55, a second layer of getter material 82, a first input-output electrode 61, and a second input-output electrode 62. A first layer of getter material 81 is deposited on the substrate 40. The first electrode 51 is formed in a first conductive layer deposited on the first layer of getter material 81. The insulating element 55 is formed in a piezoelectric layer deposited on the first electrode 51. The second electrode 52 is formed in a second conductive layer deposited on the insulating element 55. A second layer of getter material 82 is deposited on the second electrode 52. The first input-output electrode 61 is conductively connected to the first layer of getter material 81 and the second input-output electrode 62 is conductively connected to the second layer of getter material 82. One of the differences between the device of fig. 9 and the device of fig. 10 is that the fabricated metal-insulator-metal device of fig. 10 has a stepped stack structure.

In some embodiments, the first layer of getter material 81 and the second layer of getter material 82 are formed from the same getter material. In some embodiments, the first layer of getter material 81 and the second layer of getter material 82 are formed of different getter materials. In some embodiments, the first layer of getter material 81 can comprise a different material than the first electrode 51 and/or the second layer of getter material 82 can comprise a different material than the second electrode 52.

In fig. 11 to 12, the piezoelectric device 100 includes a substrate 40, a first electrode 51, a second electrode 52, an insulating member 55, a layer of getter material 82, a first input-output electrode 61, and a second input-output electrode 62. The first electrode 51 is formed in a first conductive layer deposited on the substrate 40. The insulating element 55 is formed in a piezoelectric layer deposited on the first electrode 51. The second electrode 52 is formed in a second conductive layer deposited on the insulating element 55. The layer of getter material 82 is deposited on the second electrode 52. The first input-output electrode 61 is conductively connected to the first electrode 51, and the second input-output electrode 62 is conductively connected to the layer of getter material 82. One of the differences between the device of fig. 11 and the device of fig. 12 is that the fabricated metal-insulator-metal device of fig. 12 has a stepped stack structure.

In fig. 1, 3, and 9-10, each of the piezoelectric devices 100 as shown includes a first layer of getter material 81. In some embodiments, the getter materials in the first layer of getter material 81 have a gettering capacity greater than 1Pa-l/mg for hydrogen. In some embodiments, the getter material has a gettering capacity greater than 5Pa-l/mg for hydrogen. In some embodiments, the getter material has a gettering capacity greater than 10Pa-l/mg for hydrogen. In some embodiments, the getter material has a gettering capacity greater than 20Pa-l/mg for hydrogen. In some embodiments, the first layer of getter material 81 has a composition ofTo

A thickness within the range.

In fig. 5, 7, and 11-12, each of the piezoelectric devices 100 as shown includes a second input-output electrode 62 that acts as a getter. In some embodiments, the getter material in second input-output electrode 62 has a gettering capability greater than 1Pa-l/mg for hydrogen. In some embodiments, the getter material has a gettering capacity greater than 5Pa-l/mg for hydrogen. In some embodiments, the getter material has a gettering capacity greater than 10Pa-l/mg for hydrogen. In some embodiments, the getter material has a gettering capacity greater than 20Pa-l/mg for hydrogen. In some embodiments, the second input-output electrode 62 has a first electrode at

To

A thickness within the range.

In fig. 9-12, each of the piezoelectric devices 100 as shown includes the layer of getter material 82. In some embodiments, the getter material in the layer of getter material 82 has a gettering capacity greater than 1Pa-l/mg for hydrogen gas. In some embodiments, the getter material has a gettering capacity greater than 5Pa-l/mg for hydrogen. In some embodiments, the getter material has a gettering capacity greater than 10Pa-l/mg for hydrogen. In some embodiments, the getter material has a gettering capacity greater than 20Pa-l/mg for hydrogen. In some embodiments, the layer of getter material 82 has a composition of

To

A thickness within the range.

FIG. 13 is a schematic diagram illustrating one exemplary application of a piezoelectric device according to some embodiments. In fig. 13, one or more piezoelectric devices 100 are used to control a zoom optical system (variable focus optical system). The zoom optical system includes a glass substrate 120 and a glass film 140. The position of the glass film 140 and/or the shape of the glass film 140 may be controlled by the piezoelectric device 100. In some embodiments, a well-defined transparent fluid 130 of optical index (optical index) can be used to fill the space between the glass substrate 120 and the glass film 140. The light beam 150 is focused at a focal point 155 after passing through the glass substrate 120, the transparent fluid 130, and the glass thin film 140. When a control electrical signal is applied to the piezoelectric device 100, the induced physical displacement of the piezoelectric device 100 changes the position and/or shape of the glass film 140, which changes the position of the focal point 155. In some embodiments, the zoom optical system may be included within a package of a semiconductor chip having one or more image sensors. For example, in some embodiments, the zoom optical system may be configured to focus light onto an integrated chip having one or more image sensing devices (e.g., a Complementary Metal Oxide Semiconductor (CMOS) image sensor, a charge-coupled device (CCD) image sensor, etc.).

It should be appreciated that the zoom optical system shown in fig. 13 is one exemplary use of the piezoelectric device 100 as set forth in the present invention. One skilled in the art may find other uses for the piezoelectric device 100 to control optical or mechanical systems.

Fig. 14 illustrates a flow diagram of some embodiments of a method 1400 of forming a piezoelectric device with a getter in accordance with some embodiments.

Although the methodology 1400 is illustrated and described herein as a series of acts or events, it will be appreciated that the illustrated ordering of such acts or events are not to be interpreted in a limiting sense. For example, some acts may occur in different orders and/or concurrently with other acts or events apart from those illustrated and/or described herein. Additionally, not all illustrated acts may be required to implement one or more aspects or embodiments described herein. Further, one or more of the acts depicted herein may be performed in one or more separate acts and/or phases.

At 1402, a first layer of getter material can be deposited onto a substrate. Fig. 2A and 4A illustrate cross-sectional views of some embodiments corresponding to act 1402.

At 1404, a first electrode is formed in a first conductive layer deposited on the first layer of getter material. Fig. 2A-2B, 4A-4B, 6A-6B, and 8A-8B illustrate cross-sectional views of some embodiments corresponding to act 1404.

At 1406, an insulating element is formed in the piezoelectric layer deposited on the first electrode. Fig. 2A-2B, 4A-4B, 6A-6B, and 8A-8B illustrate cross-sectional views of some embodiments corresponding to act 1406.

At 1408, a second electrode is formed in a second conductive layer deposited on the insulating element. Fig. 2A-2B, 4A-4B, 6A-6B, and 8A-8B illustrate cross-sectional views of some embodiments corresponding to act 1408.

At 1410, a second layer of getter material can be deposited onto the second electrode. Fig. 9-12 illustrate cross-sectional views of some embodiments corresponding to act 1410. It is to be appreciated that in various embodiments, the first layer of getter material can be deposited while the second layer of getter material is not deposited (at 1402), the second layer of getter material can be deposited while the first layer of getter material is not deposited (at 1410), or the first and second layers of getter materials can be deposited simultaneously at 1402 and 1410.

At 1412, a protective layer is formed covering the first electrode, the second electrode, and the insulating element. Fig. 2C, 4C, 6C, and 8C illustrate cross-sectional views of some embodiments corresponding to act 1412.

At 1414, a first input-output electrode can be formed that extends through the protective layer to be conductively connected to the first electrode. Fig. 1, 3, 5, and 7 show cross-sectional views of some embodiments corresponding to act 1414.

At 1416, a second input-output electrode can be formed that extends through the protective layer to conductively connect to the second electrode. Fig. 1, 3, 5, and 7 illustrate cross-sectional views of some embodiments corresponding to act 1416.

Some aspects of the present disclosure relate to a piezoelectric device. The device includes a substrate, a first layer of getter material, a first electrode, an insulating element, a second electrode, a first input-output electrode, and a second input-output electrode. A first layer of getter material is deposited on the substrate. A first electrode is formed in a first conductive layer deposited on the first layer of getter material. The first layer of getter material has a higher gettering capability for hydrogen than the first electrode. The insulating element is formed in a piezoelectric layer deposited on the first electrode. The second electrode is formed in a second conductive layer deposited on the insulating element. The first input-output electrode is conductively connected to the first layer of getter material. The second input-output electrode is conductively connected to the second electrode.

In some embodiments, the first electrode and the second electrode have substantially the same layout.

In some embodiments, the piezoelectric device further comprises a protective layer covering a portion of the second electrode.

In some embodiments, the sidewalls of the first electrode are laterally offset relative to the opposing outermost sidewalls of the first layer of getter material.

In some embodiments, the second electrode covers a portion of the insulating element.

In some embodiments, the piezoelectric device further includes a protective layer covering a portion of the second electrode, a portion of the insulating element, and a portion of the first input-output electrode.

In some embodiments, the piezoelectric device further comprises a second layer of getter material deposited on the second electrode, wherein the second layer of getter material has a gettering capability greater than 1.0Pa-l/mg for hydrogen.

In some embodiments, the second input-output electrode is formed in the second layer of getter material.

In some embodiments, the second input-output electrode is deposited on at least a portion of the second layer of getter material.

In some embodiments, the first layer of getter material has a gettering capacity of greater than 5Pa-l/mg for hydrogen.

In some embodiments, the first layer of getter material comprises one of: titanium, barium, cerium, lanthanum, aluminum, magnesium, thorium, or any combination thereof.

In some embodiments, the first layer of getter material has a composition of

ToA thickness within the range.

Other aspects of the invention relate to a piezoelectric device. The device includes a substrate, a first electrode, an insulating element, a second electrode, a first input-output electrode, a second input-output electrode, and a layer of getter material. The first electrode is formed in a first conductive layer deposited on the substrate. The insulating element is formed in a piezoelectric layer deposited on the first electrode. The second electrode is formed in a second conductive layer deposited on the insulating element. A first input-output electrode is conductively connected to the first electrode. The second input-output electrode is conductively connected to the second electrode. The layer of getter material is deposited on the second electrode and has a greater gettering capacity for hydrogen than the second electrode.

In some embodiments, the second input-output electrode is formed in the layer of getter material.

In some embodiments, the second input-output electrode is deposited on at least a portion of the layer of getter material.

Other aspects of the invention relate to a method of manufacturing a piezoelectric device. The method includes depositing a first layer of getter material on a substrate. The method includes forming a first electrode in a first conductive layer deposited on the first layer of getter material. The method includes forming an insulating element in a piezoelectric layer deposited on the first electrode. The method includes forming a second electrode in a second conductive layer deposited on the insulating element. The method includes forming a first input-output electrode conductively connected to the first layer of getter material. The method includes forming a second input-output electrode conductively connected to the second electrode.

In some embodiments, the method further comprises depositing a second layer of getter material on the second electrode, wherein the second layer of getter material has a gettering capability greater than 1.0Pa-l/mg for hydrogen.

In some embodiments, the method further comprises forming the second input-output electrode in the second layer of getter material.

In some embodiments, the method further comprises depositing the second input-output electrode on at least a portion of the second layer of getter material.

In some embodiments, the method further comprises depositing a protective layer to cover at least a portion of the second electrode.

The foregoing has outlined features of several embodiments so that those skilled in the art may better understand the various aspects of the present invention. Those skilled in the art should appreciate that they may readily use the present invention as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.