阅读说明：本技术 半导体发光装置 (Semiconductor light-emitting apparatus ) 是由 胜野弘 泽野正和 宫部主之 于 2016-03-09 设计创作，主要内容包括：本发明的实施方式提供一种将配光扩大的半导体发光装置。实施方式的半导体发光装置包括：发光体,包含：具有第1面及第1侧面的第1导电型的第1半导体层、具有第2面及第2侧面的第2导电型的第2半导体层、及设置在所述第1半导体层与第2半导体层之间的发光层；第1金属层,电连接于所述第1半导体层；及第2金属层,电连接于所述第2半导体层。所述发光体包含凹部,该凹部设置为自所述第2面到所述第1半导体层中的深度,且具有与所述第1及第2侧面对向的内面。(Embodiments of the present invention provide a kind of by the widened semiconductor light-emitting apparatus of light distribution.The semiconductor light-emitting apparatus of embodiment includes: illuminator, includes: the 1st semiconductor layer of the 1st conductivity type with the 1st face and the 1st side, the 2nd semiconductor layer of the 2nd conductivity type with the 2nd face and the 2nd side and the luminescent layer that is arranged between the 1st semiconductor layer and the 2nd semiconductor layer；1st metal layer is electrically connected to the 1st semiconductor layer；And the 2nd metal layer, it is electrically connected to the 2nd semiconductor layer.The illuminator includes recess portion, which is set as from the 2nd face to the depth in the 1st semiconductor layer, and has the inner face with the 1st and the 2nd side opposite direction.)

1. a kind of semiconductor light-emitting apparatus, it is characterised in that: include:

Luminous component includes: the 1st semiconductor layer of the 1st conductivity type, the 2nd semiconductor layer of the 2nd conductivity type and the described 1st Luminescent layer between semiconductor layer and the 2nd semiconductor layer；And the luminous component includes the 1st surface side, leads comprising the described 1st half The surface of body layer；2nd surface side, the surface comprising the 2nd semiconductor layer, and be opposite side with the 1st surface side；Side Face, the outer rim comprising the 1st semiconductor layer；And recess portion, the described 1st half is extended up on the inside of the 2nd surface lateral The inside of conductor layer and have a part towards the side inner face；

1st metal layer, setting within the recess, are electrically connected to the 1st semiconductor layer；

2nd metal layer is arranged in the 2nd surface side, is electrically connected to the 2nd semiconductor layer；

Electrode is padded, is electrically connected to the 1st semiconductor layer via the 1st metal layer, and described in the luminous component 1st surface side has exposed surface；

The 2nd surface side of the luminous component is arranged in articulamentum, covers the 1st metal layer；And

1st dielectric film is arranged between the 1st metal layer and the articulamentum, makes the 1st metal layer and the connection Layer electrical isolation；And

2nd metal layer is between the luminous component and the articulamentum.

2. semiconductor light-emitting apparatus according to claim 1, it is characterised in that: be divided between the side and the inner face The thickness of the luminous component on the lamination direction of 1st semiconductor layer, the 2nd semiconductor layer and the luminescent layer 0.2 times or more and 10 times or less.

3. semiconductor light-emitting apparatus according to claim 1, it is characterised in that: in the 2nd table of the luminous component Interior angle between face and the inner face is 90 degree or more.

4. semiconductor light-emitting apparatus according to claim 1, it is characterised in that: the inner face shines the luminescent layer Portion surrounds.

5. semiconductor light-emitting apparatus according to claim 1, it is characterised in that:

The recess portion has opening in the 2nd surface side,

The minimum widith of the opening is the lamination in the 1st semiconductor layer, the 2nd semiconductor layer and the luminescent layer 0.1 times or more and 10 times or less of the thickness of the luminous component on direction.

6. semiconductor light-emitting apparatus according to claim 1, it is characterised in that:

2nd semiconductor layer includes: not to be electrically connected to the part 1 of the 2nd metal layer and be electrically connected to the described 2nd The part 2 of metal layer；And

The part 1 is arranged between the side and the inner face.

7. semiconductor light-emitting apparatus according to claim 1, it is characterised in that: be included on the inside of the 2nd surface lateral The multiple recess portions extended.

8. semiconductor light-emitting apparatus according to claim 1, it is characterised in that:

1st dielectric film covers the recess portion；

1st metal layer is connected on the 1st semiconductor layer in the bottom surface of the recess portion；

2nd metal layer is connected on the 2nd semiconductor layer in the 2nd surface side.

9. semiconductor light-emitting apparatus according to claim 8, it is characterised in that further include: the 3rd metal layer, across described 1 dielectric film covers the inner face.

10. semiconductor light-emitting apparatus according to claim 8, it is characterised in that further include:

The 2nd surface side of the luminous component is arranged in substrate；And

The bonding layer of electric conductivity is arranged between the luminous component and the substrate；And

The substrate is that the 2nd metal layer is electrically connected to via the bonding layer；

1st metal layer includes the extension extended over the substrate to the outside of the luminous component.

11. semiconductor light-emitting apparatus according to claim 1, it is characterised in that:

1st metal layer is connected on the 1st semiconductor layer in the bottom surface of the recess portion；

2nd metal layer is connected on the 2nd semiconductor layer in the 2nd surface side.

12. semiconductor light-emitting apparatus according to claim 11, it is characterised in that further include:

The 2nd surface side of the luminous component is arranged in substrate；And

The bonding layer is between the luminous component and the substrate；

The substrate is that the 2nd metal layer is electrically connected to via the bonding layer；

1st metal layer include along the substrate and be more than the luminous component outer rim and the extension that extends.

13. semiconductor light-emitting apparatus according to claim 12, it is characterised in that further include: reflecting layer, with the 1st electricity Deielectric-coating is adjacent, separates from the side of the recess portion.

14. semiconductor light-emitting apparatus according to claim 1, it is characterised in that further include: the 2nd dielectric film is located at institute It states between the 1st dielectric film and the inner face of the recess portion.

15. semiconductor light-emitting apparatus according to claim 14, it is characterised in that further include:

The reflecting layer of electric conductivity, it is adjacent with the recess portion and separatedly configure；And

At least part of the recess portion extends between the reflecting layer and the side of the luminous component.

Technical field

Embodiments of the present invention are to be related to a kind of semiconductor light-emitting apparatus.

Background technique

Semiconductor light-emitting apparatus for example has and will shine made of p-type semiconductor layer, luminescent layer and n-type semiconductor laminated layer Body.The light brightness with higher on lamination direction discharged from the illuminator.Therefore, in the purposes for needing wider light distribution In, it is desirable that promote the brightness on the direction intersected with lamination direction.For example, when using fluorophor to carry out what light emitting layer was radiated It is more satisfactory also to be excited not only to configure in the fluorophor of lamination direction but also configuration around illuminator when the wavelength convert of light, Promote luminous efficiency as a whole.

Summary of the invention

Embodiments of the present invention are to provide a kind of by the widened semiconductor light-emitting apparatus of light distribution.

Detailed description of the invention

Fig. 1 (a) is the top view for schematically showing the semiconductor light-emitting apparatus of the 1st embodiment, is (b) semiconductor light emitting The schematic sectional view of device.

Fig. 2 (a) is other top views for schematically showing the semiconductor light-emitting apparatus of the 1st embodiment, is (b) and (c) The major part schematic sectional view of semiconductor light-emitting apparatus.

Fig. 3 (a)~(c) is to illustrate the schematic sectional view for the intracorporal propagation path of light that shines.

Fig. 4 (a)~(c) is the schematic sectional view for indicating the manufacturing process of semiconductor light-emitting apparatus of the 1st embodiment.

Fig. 5 (a)~(c) is the schematic sectional view for indicating the then manufacturing process of Fig. 4 (c).

Fig. 6 (a) and be (b) schematic sectional view for indicating the then manufacturing process of Fig. 5 (c).

Fig. 7 (a) and be (b) schematic sectional view for indicating the then manufacturing process of Fig. 6 (b).

Fig. 8 (a) and be (b) schematic sectional view for indicating the then manufacturing process of Fig. 7 (b).

Fig. 9 (a) is the top view for schematically showing the semiconductor light-emitting apparatus of the 2nd embodiment, (b) and is (c) partly to lead The major part schematic sectional view of body light emitting device.

Figure 10 (a) is the top view for schematically showing the semiconductor light-emitting apparatus of the 3rd embodiment, is (b) semiconductor hair The major part schematic sectional view of electro-optical device.

Figure 11 (a) and be (b) schematic sectional view for indicating the semiconductor light-emitting apparatus of change case of the 3rd embodiment.

The semiconductor light-emitting apparatus of embodiment includes: illuminator, includes: the with the 1st face and the 1st side the 1st is conductive 1st semiconductor layer of type, the 2nd conductivity type with the 2nd face and the 2nd side the 2nd semiconductor layer and be arranged the described 1st half Luminescent layer between conductor layer and the 2nd semiconductor layer；1st metal layer is electrically connected to the 1st semiconductor layer；And the 2nd metal Layer, is electrically connected to the 2nd semiconductor layer.The illuminator includes recess portion, which is set as from the 2nd face to described the Depth in 1 semiconductor layer, and there is the inner face with the 1st and the 2nd side opposite direction.