Utilize the electronic device and its manufacturing method of piezoelectric substance

文档序号:1774112 发布日期:2019-12-03 浏览:29次 中文

阅读说明:本技术 利用压电物质的电子装置及其制造方法 (Utilize the electronic device and its manufacturing method of piezoelectric substance ) 是由 安范模 朴胜浩 宋台焕 于 2019-05-17 设计创作,主要内容包括:本发明涉及一种对三维形状具有高识别精确度且具有改善的耐久性的利用压电物质的电子装置及其制造方法。(The present invention relates to a kind of pair of 3D shapes with high identification accuracy and with the electronic device and its manufacturing method using piezoelectric substance of improved durability.)

1. a kind of electronic device using piezoelectric substance characterized by comprising

Anode oxide film;

First electrode forms the top for arriving the anode oxide film;

Second electrode forms the lower part for arriving the anode oxide film;And

Piezoelectricity column portion forms and arrives between the first electrode and second electrode, including piezoelectric substance.

2. the electronic device according to claim 1 using piezoelectric substance, which is characterized in that

Piezoelectricity column portion is filled into the through hole of the anode oxide film up and down and by the anode oxide film packet It covers.

3. the electronic device according to claim 1 using piezoelectric substance, which is characterized in that further include forming described Electric conductivity column portion between one electrode and the second electrode.

4. the electronic device according to claim 3 using piezoelectric substance, which is characterized in that the filling of electric conductivity column portion It is coated in the through hole of the anode oxide film up and down by the anode oxide film.

5. the electronic device according to claim 1 using piezoelectric substance, which is characterized in that described using piezoelectric substance Electronic device is 3D shape identification device.

6. the electronic device according to claim 5 using piezoelectric substance, which is characterized in that the 3D shape identification dress It is set to fingerprint sensor.

7. the electronic device according to claim 1 using piezoelectric substance, which is characterized in that described using piezoelectric substance Electronic device is sound wave sending device or acoustic receiver device.

8. the electronic device according to claim 1 using piezoelectric substance, which is characterized in that described using piezoelectric substance Electronic device is speaker unit.

9. a kind of manufacturing method of the electronic device using piezoelectric substance characterized by comprising

The step of preparing anode oxide film;

The step of forming the through hole of the anode oxide film up and down;

In the step of through hole fills piezoelectric substance and forms piezoelectricity column portion;

In the step of first electrode is formed at the top of the anode oxide film;And

In the step of second electrode is formed at the lower part of the anode oxide film, and

Piezoelectricity column portion is between the first electrode and the second electrode.

10. the manufacturing method of the electronic device according to claim 9 using piezoelectric substance, which is characterized in that form institute The step of stating through hole is to form the through hole by etching the region of the anode oxide film.

11. the manufacturing method of the electronic device according to claim 9 using piezoelectric substance, which is characterized in that further include The through hole fill conductive material and the step of form electric conductivity column portion,

Electric conductivity column portion connects at least one of at least one of described first electrode and the second electrode each other It connects.

Technical field

The present invention relates to a kind of electronic devices and its manufacturing method using piezoelectric substance.

Background technique

It is following device using the electronic device of piezoelectric substance: to setting to the upper of the piezoelectricity column portion for including piezoelectric substance The electrode of surface and lower surface applies voltage and vibrates up and down piezoelectricity column portion to generate signal, anti-based on reason three-dimension object It is emitted back towards the signal come and makes the shape image of the potential difference measurement three-dimension object of piezoelectricity column portion deformation generation.Utilize piezoelectric substance Electronic device in piezoelectricity post part be not used as the image pixel of 3D shape to function.

In the past, the mode for manufacturing piezoelectricity column portion is as follows: firstly, after production semiconductor substrate or resin die, passing through Photoetching process manufactures the hole to fill piezoelectric substance.Hereafter, piezoelectricity is formed and piezoelectric substance is filled in the inside in hole Column portion.

Piezoelectricity column portion is usually along including that ultrasonic wave is received and dispatched in lateral all directions, from the side-emitted in piezoelectricity column portion Ultrasonic wave is directly detected by adjacent piezoelectricity column portion and the noise as adjacent piezoelectricity column portion plays a role.In order to remove This noise, it is important that the characteristic of the peripheral portion in cladding piezoelectricity column portion.In other words, the peripheral portion in piezoelectricity column portion is coated Noise need to be effectively removed by decaying from the sound wave that the side in piezoelectricity column portion is propagated.Therefore, for cladding piezoelectricity column The peripheral portion proposition in portion has synthetic resin, polymer material (polymer), epoxy resin etc., but these materials one side play from The function in lateral support piezoelectricity column portion improves the sound wave that decaying is propagated from the side in adjacent piezoelectricity column portion simultaneously on one side There are the limit in terms of the efficiency of (in particular, ultrasonic wave).

It on the other hand, need to be with higher density shape in order to improve the accuracy as the electronic device using piezoelectric substance At piezoelectricity column portion, but the case where processing hole to the mold of synthetic resin or polymer material (polymer) as previous Under, there are problems that being difficult to obtain the hole of highdensity perpendicular shape.

In addition, filling piezoelectric substance in the state that the bottom of mold blocks, therefore exist because remaining in mould inside Air pressure and the problem of fill piezoelectric substance with can not be successfully.Though can be by the way that the air of mould inside be all being gone using vacuum pump Piezoelectric substance is filled under vacuum conditions after removing and solves the problems, such as to a certain extent this, but still there are its operation technique is cumbersome The problem of.

Using semiconductor substrate, needs following technique: passing through semiconductor technology using semiconductor substrate After (photoetching process) forms hole, piezoelectric substance is filled in the inside in hole, semiconductor substrate is replaced as insulating layer (such as ring later Oxygen resin).

However, there are the following problems for this mode: need to be additionally formed the technique in hole, need need to by fill piezoelectric substance when The semiconductor substrate used is replaced as many and diverse technique of insulating layer, in the case where not completely removing semiconductor substrate, device Performance decline.

[existing technical literature]

[patent document]

(patent document 1) Ebrean Registered Patent bulletin accession designation number the 10-1288178th

(patent document 2) Japanese Registered Patent bulletin accession designation number the 2617584th

(patent document 3) Japanese Registered Patent bulletin accession designation number the 1996-012181st

Summary of the invention

[problems to be solved by the invention]

Therefore, the present invention is proposed to solve conventional problems as described above, the purpose of the present invention is to provide A kind of pair of 3D shape is with high identification accuracy and with the electronic device using piezoelectric substance of improved durability.

In addition, another object of the present invention is to provide a kind of pair of 3D shape with high identification accuracy and have improvement Durability the electronic device using piezoelectric substance manufacturing method.

[means solved the problems, such as]

In order to reach object of the present invention, the electronic device of the invention using piezoelectric substance includes: anodic oxidation Film;First electrode forms the top for arriving the anode oxide film;Second electrode forms the lower part for arriving the anode oxide film;With And piezoelectricity column portion, it is formed and is arrived between the first electrode and the second electrode, including piezoelectric substance.

In addition, described be characterized in that using the electronic device of piezoelectric substance: piezoelectricity column portion is filled into be passed through up and down Lead in the through hole of the anode oxide film and is coated by the anode oxide film.

In addition, the electronic device using piezoelectric substance further includes forming the first electrode and the second electrode Between electric conductivity column portion.

In addition, described be characterized in that using the electronic device of piezoelectric substance: electric conductivity column portion is filled into be passed through up and down Lead in the through hole of the anode oxide film and is coated by the anode oxide film.

In addition, described be characterized in that using the electronic device of piezoelectric substance: the electronic device using piezoelectric substance For 3D shape identification device.

In addition, described be characterized in that using the electronic device of piezoelectric substance: the 3D shape identification device is fingerprint Sensor.

In addition, described be characterized in that using the electronic device of piezoelectric substance: the electronic device using piezoelectric substance For sound wave sending device or acoustic receiver device.

In addition, described be characterized in that using the electronic device of piezoelectric substance: the electronic device using piezoelectric substance For speaker unit.

On the other hand, the manufacturing method of the electronic device of the invention using piezoelectric substance is characterized in that including: to prepare The step of anode oxide film;The step of forming the through hole of the anode oxide film up and down;It fills and presses in the through hole Isoelectric substance and the step of form piezoelectricity column portion;In the step of first electrode is formed at the top of the anode oxide film;And The step of second electrode, is formed at the lower part of the anode oxide film, and piezoelectricity column portion is located at the first electrode and second Between electrode.

In addition, the manufacturing method of the electronic device using piezoelectric substance is characterized in that: forming the through hole Step is to form the through hole by etching the region of the anode oxide film.

In addition, the manufacturing method of the electronic device using piezoelectric substance is characterized in that: further including in the perforation Hole filling conductive material and the step of form electric conductivity column portion, electric conductivity column portion is by least one in the first electrode At least one of person and the second electrode are connected to each other.

[invention effect]

As described above, the electronic device of the invention using piezoelectric substance has high identification accuracy and tool to 3D shape There is improved durability.

In addition, the electronic device of the invention using piezoelectric substance can flip-chip be installed to control chip or circuit base Plate.

On the other hand, the manufacturing method of the electronic device according to the present invention using piezoelectric substance, is easy to fill piezoelectricity object Matter, manufacturing process become simple, and can manufacture a kind of electronic device with improved identification accuracy and durability.

Detailed description of the invention

Fig. 1 to Fig. 5 is the manufacturing method for indicating the electronic device using piezoelectric substance of the preferred embodiment of the present invention Figure.

Fig. 6 is the skeleton diagram of the electronic device using piezoelectric substance of the preferred embodiment of the present invention.

Fig. 7 is to indicate to be mounted on the electronic device using piezoelectric substance of the preferred embodiment of the present invention on control chip State figure.

Fig. 8 is to indicate that the electronic device using piezoelectric substance of the preferred embodiment of the present invention sends the figure of sound wave.

Fig. 9 is to indicate that the electronic device using piezoelectric substance of the preferred embodiment of the present invention receives the figure of sound wave.

Figure 10 is the figure for indicating the electronic device identification fingerprint using piezoelectric substance of the preferred embodiment of the present invention.

Specific embodiment

The following contents only illustrates the principle of invention.Therefore, though not clearly being illustrated or illustrating in the present specification, Those skilled in the art can realize the principle of invention and invent including the various devices in the concept and range of invention.In addition, Cited all with proviso terms and embodiment are interpreted as in principle only expressly for understanding in this specification The concept of invention is not restricted to the embodiment especially enumerated like this and state.

Above-mentioned purpose, feature and advantage become more apparent according to detailed description below relevant to attached drawing, therefore send out The technical idea that the those of ordinary skill in technical field belonging to bright can easily carry out an invention.

Hereinafter, referring to embodiment shown in the drawings, piezoelectric substance is utilized to the preferred embodiment of the present invention in detail Electronic device and its manufacturing method are illustrated.

The electronic device using piezoelectric substance of the preferred embodiment of the present invention includes: anode oxide film 100;First electrode 200, form the top for arriving anode oxide film 100;Second electrode 300 forms the lower part for arriving anode oxide film 100;And piezoelectricity Property column portion 400, formed between first electrode 200 and second electrode 300, including piezoelectric substance.

Compared with using the conventional art of synthetic resin, polymer material (polymer), epoxy resin etc., of the invention is excellent The electronic device using piezoelectric substance of embodiment is selected to have differences in terms of using anode oxide film 100.Therefore, hereinafter, With reference first to Fig. 1 specifically to the anode oxide film of the electronic device using piezoelectric substance of composition the preferred embodiment of the present invention 100 are illustrated.

The manufacturing method of anode oxide film 100 includes the steps that the step of by anodic metal oxide and the removal metal.

Anode oxide film 100 refers to the film that will be formed as the anodic metal oxide of base material.In addition, stomata 110 refers to It is formed during anodic metal oxide to be formed to anode oxide film 100 and the hole of the arrangement with systematicness.

In the case where the metal as base material is aluminium (Al) or aluminium alloy, if by base material anodic oxidation, in base material Surface formed anodised aluminium (Al2O3) material anode oxide film 100.The anode oxide film formed as above content 100 points is in the internal barrier layers for forming stomata 110 and in the internal porous layer for being formed with stomata 110.Barrier layer is located at mother The top of material, porous layer are located at the top of barrier layer.

In the base material that the anode oxide film 100 with barrier layer and porous layer is formed in surface, if removal base material, Only remaining anode aluminium oxide (Al2O3) material anode oxide film 100.In the case, if removal barrier layer, as Fig. 1 institute Show that the same anode oxide film 100 is whole by anodised aluminium (Al2O3) material is constituted, to have uniform diameter, with vertical shape State is formed up and down and the stomata 110 of the arrangement with systematicness.

Each stomata 110 exists independently of one another in anode oxide film 100.In other words, there are several nanometers to receive to hundreds of Multiple stomatas 110 of the width dimension of rice are formed in a manner of anode oxide film 100 up and down including anodic oxidation Aluminium (Al2O3) material anode oxide film 100.

It, need to be with higher Density and distribution piezoelectricity column portion in order to improve the accuracy for the electronic device for utilizing piezoelectric substance 400.Therefore, the width for needing narrowly formed each piezoelectricity column portion 400 also needs narrowly formed first electrode 200 and the second electricity The line width of pole 300.In first electrode 200 and the second electricity due to the line width of narrowly formed first electrode 200 and second electrode 300 Pole 300 generates heat.At this point, leading to adjacent 400 thermal deformation of piezoelectricity column portion because of the heat of generation.Piezoelectricity column portion 400 needs to survey The fixed image that 3D shape is identified from the received sound wave of 3D shape, but because the heat flowed into from peripheral portion causes thermal deformation, because This declines the accuracy of the picture signal of 3D shape.

However, preferred embodiment in accordance with the present invention, by the composition of the anode oxide film 100 with multiple stomatas 110, Even if the peripheral portion in piezoelectricity column portion 400 uses first electrode 200 and second electrode 300 with small line width, have multiple The anode oxide film 100 of stomata 110 also executes heat insulating function, therefore can be minimum by the thermal deformation in adjacent piezoelectricity column portion 400 Change.The noise that this prevents generate due to 400 thermal deformation of piezoelectricity column portion.

Secondly, as shown in Fig. 2, anode oxide film 100 remove by base material metal anodic oxidation and the stomata 110 of self-assembling formation with Outside, through hole 150 is also formed.Through hole 150 is the composition of anode oxide film 100 up and down.

Through hole 150 is formed and being etched selectively to anode oxide film 100.Locally shelter anode oxide film 100, it only etches unshielded region and forms through hole 150.By being etched, not only can easily form has greater than gas The through hole 150 of the inner width in hole 110, and etching solution reacts with anode oxide film 100 and through hole 150 is presented Under vertically penetrate through the shape of anode oxide film 100.As described above, stomata 110 and through hole 150 are in anode oxide film 100 Interior perpendicular hole shape, and abreast have each other.

Secondly, as shown in figure 3, filling piezoelectric substance in the inside of through hole 150.Piezoelectric substance, which is used as, to be played mechanical force It is converted into electric signal or converts the electrical signal to the substance of the effect of mechanical force, can be lead titanates (PbTiO3), barium titanate (BaTiO3) or lead zirconate titanate (PZT).

Piezoelectric substance is filled in the state that the bottom of mold blocks, therefore nothing due to the air pressure because remaining in mould inside The conventional art that method successfully fills piezoelectric substance is different, and through hole 150 is upper surface and the following table for penetrating through anode oxide film 100 The composition in face, therefore can easily fill piezoelectric substance.

In turn, through hole 150 is the composition for penetrating through the upper surface and the lower surface of anode oxide film 100, therefore can be by setting It sets and aspirates the vacuum pump of air from the one side of anode oxide film 100 and form the acoustic pressure of the inside towards through hole 150 more to hold Changing places flows into piezoelectric substance to the inside of through hole 150.It is constituted according to as described above, piezoelectric substance is filled up completely perforation The inside in hole 150, therefore the uniformity in piezoelectricity column portion 400 improves, durability also improves.

After piezoelectric substance is filled in the inside of through hole 150, rapid thermal treatment is carried out to piezoelectric substance and is sintered piezoelectricity object Piezoelectricity column portion 400 is consequently formed in matter.By carrying out rapid thermal treatment to piezoelectric substance, it is filled in the inside of through hole 150 Piezoelectric substance keeps the shape for the inside for being filled in through hole 150 and is sintered.The condition of rapid thermal treatment is at 850 DEG C to 1000 DEG C section carry out 1 minute or more and within 20 minutes.

Piezoelectricity column portion 400 is with being filled into the through hole 150 of anode oxide film 100 up and down and by with multiple The composition for the form that the anode oxide film 100 of stomata 110 coats.Anode oxide film 100 has electrical insulation characteristics, so without using In the other insulating layer of first electrode 200 and second electrode 300.In addition, the side in adjacent piezoelectricity column portion 400 generates Ultrasonic wave decay because of adjacent multiple air columns, therefore can be effectively removed because of the adjacent generation of piezoelectricity column portion 400 Noise.

Secondly, filling conductive material in the through hole 150 for being not filled by piezoelectric substance.Herein, as by conductive material The method for being filled into the inside of through hole 150, using sputtering method, atomic layer deposition method (the Atomic Layer using mask Deposition, ALD).As long as however, fill method be can the inside of through hole 150 fill conductive material method, Other methods in addition to this can also be used.Conductive material is formed in one direction along the formation direction of through hole 150, by This forms the electric conductivity column portion 500 of perpendicular shape.Electric conductivity column portion 500 is by least one in hereinafter described first electrode 200 At least one of person and second electrode 300 are connected to each other.

It can will be provided with being connected to sun to the first electrode 200 of the upper surface of anode oxide film 100 by electric conductivity column portion 500 The downside of pole oxidation film 100, therefore the electronic device for utilizing piezoelectric substance is being electrically connected to circuit substrate or control chip etc. When, it can be without being additionally carried out routing joining process and realizing flip-chip bond.

Electric conductivity column portion 500 has in the through hole 150 for being filled into anode oxide film 100 up and down and by anodic oxidation The composition for the form that film 100 coats.Anode oxide film 100 with multiple stomatas 110 has blocks heat to pass in the horizontal direction The heat insulating function passed.Therefore, constituted according to as described above, the transmitting of the heat that electric conductivity column portion 500 generates in the horizontal direction by Anode oxide film 100 blocks, and thus prevents the noise because of caused by adjacent 400 thermal deformation of piezoelectricity column portion.

In addition, piezoelectricity column portion 400 and electric conductivity column portion 500 are to be filled into passing through for anode oxide film 100 up and down It is made of in through-hole 150 what anode oxide film 100 coated, so can be by piezoelectricity column portion 400 and the side in electric conductivity column portion 500 The minimizing deformation in face direction and prevent intensity from declining, therefore device durability improve, it can be achieved that device miniaturization.

Have piezoelectricity column portion 400 and electric conductivity column portion 500 with the arrangement of m row × n column matrix shape.Referring to Fig. 3, pressure Electrical column portion 400 is arranged in the column of 6 rows × 4, and electric conductivity column portion 500 is arranged in 1 column in the rightmost side, thus piezoelectricity column portion 400 with Electric conductivity column portion 500 is on the whole in the arrangement of 6 rows × 5 column matrix shape.

On the other hand, although not shown, but can differently exist with electric conductivity column portion 500 in the composition that the rightmost side is arranged in 1 column Electric conductivity column portion 500 is configured between multiple piezoelectricity columns portion 400.It is constituted, can be reduced to passing through electric conductivity according to as described above The length for the first electrode 200 that the upper surface in the piezoelectricity column portion 400 of the outermost of the upper surface connection in column portion 500 extends, because This can reduce the voltage drop generated because electrode is elongated.

On the other hand, although not shown, but electric conductivity column portion 500 may also be configured to following form: repeatedly with a standard of behaviour And it is configured to the rightmost side, and the leftmost side is configured to adjacent another standard of behaviour.In other words, electric conductivity column portion 500 can Idol including first electric conductivity column portion corresponding with the odd-numbered line in multiple piezoelectricity columns portion 400 and with multiple piezoelectricity columns portion 400 Several rows of corresponding second electric conductivity column portions.It is configured to the side and that the first electric conductivity column portion is located at multiple piezoelectricity columns portion 400 Two electric conductivity column portions are located at the form of the other side in multiple piezoelectricity columns portion 400.It is constituted according to as described above, it can be according to each row (or according to each column) individually control multiple piezoelectricity columns portion 400.

On the other hand, although not shown, but can have multiple electric conductivity columns portion on the basis of a other first electrode 500.It is constituted according to as described above, even if any electric conductivity column portion 500 loses its function, prevented also from utilization piezoelectric substance Electronic device loss of function.

Then, referring to Fig. 4 and Fig. 5, first electrode 200 and second electrode 300 are formed as on the top of anode oxide film 100 And the form that lower part is intersected with each other.In other words, if first electrode 200 is in the upper surface of anode oxide film 100 transversely shape At then second electrode 300 is formed along longitudinal direction in the lower surface of anode oxide film 100.Piezoelectricity column portion filled with piezoelectric substance 400 between first electrode 200 and second electrode 300, in addition, the electric conductivity column portion 500 filled with conductive material is located at Between first electrode 200 and second electrode 300.

First electrode 200 and second electrode 300 are formed by the surface that sputtering process deposits to anode oxide film 100. First electrode 200 and second electrode 300 may include one of Pt, W, Co, Ni, Au, Cu or including at least one mixture.

Referring to Fig. 4, first electrode 200 is formed on the top of anode oxide film 100.First electrode 200 is with separated from each other Form has multiple side by side.As shown, piezoelectricity column portion 400 and electric conductivity column portion 500 are configured to 6 rows × 5 column, first electrode 200 with in the arrangement of the column of 6 rows × 5 along multiple piezoelectricity columns portion 400 of line direction configuration and the upper table in electric conductivity column portion 500 The mode that face connects is formed.Therefore, the number as shown in figure 4, first electrode is formed as the number of 6 rows, with electric conductivity column portion 500 It is identical.

Fig. 5 is the figure for indicating the lower part of anode oxide film 100 of Fig. 4, and referring to Fig. 5, second electrode 300, which is formed, arrives anodic oxygen Change film 100 lower part, be configured to every by anode oxide film 100 and with first electrode 200 it is intersected with each other in the form of.Second electrode 300 include the one of second electrode 310 connecting with the lower surface in piezoelectricity column portion 400 and the lower surface with electric conductivity column portion 500 Second two electrodes 330 of connection.

Fig. 6 is to omit the utilization pressure that the state of anode oxide film 100 is diagrammatically denoted by the preferred embodiment of the present invention The figure of the electronic device of isoelectric substance.As shown in fig. 6, piezoelectricity column portion 400 has to one of first electrode 200 and second electrode Between 310, electric conductivity column portion 500 has between first electrode 200 and second two electrodes 330.

One second two electrodes 330 pass through multiple (for example, 5) electric conductivity column portions 500 and multiple (for example, 5) the The connection of one electrode 200, therefore one second two electrodes 330 are electrically connected with multiple first electrodes 200.One can be passed through as a result, The second multiple first electrodes 200 of two electrodes, 330 1 secondary control.

In addition, passing through the composition that electric conductivity column portion 500 is connect with first electrode 200 according to second two electrodes 330, have Following advantage:, can be without in addition when the electronic device for utilizing piezoelectric substance is electrically connected to circuit substrate or control chip etc. It carries out routing joining process and realizes flip-chip bond.

Referring to Fig. 7, has the control chip 600 being electrically connected by conducting wire 610 on circuit substrate 650, in control chip 600 flip-chip-ons install the electronic device 10 using piezoelectric substance of the preferred embodiment of the present invention.Utilizing piezoelectric substance Electronic device 10 in, to piezoelectricity column portion 400 apply power supply or receive the signal from piezoelectricity column portion 400 second Electrode 300 has to the lower part of electronic device 10, therefore 10 flip-chip of electronic device can be installed to control chip 600.Though It is not shown, but in the case where circuit substrate 650 is directly provided with the control unit to drive electronics 10, it can be by electronic device 10 direct flip-chips are installed to circuit substrate 650.

As described above, without electronic device 10 is electrically connected to circuit substrate 650 or controls the other of chip 600 Conducting wire, thus install become it is easy, it can be achieved that electronic device 10 miniaturization.

In the above-described embodiments, illustrate to penetrate through after forming the through hole 150 of anode oxide film 100 up and down The inside in hole 150 fills piezoelectric substance and forms piezoelectricity column portion 400, fills conductive material and forms electric conductivity column portion 500, But through hole 150 can not also be additionally formed and directly utilize the stomata 110 of anode oxide film 100 in adjacent multiple stomatas 110 The inside filling piezoelectric substance of group form piezoelectricity column portion 400, fill out in the inside of the group of adjacent multiple stomatas 110 It fills conductive material and forms electric conductivity column portion 500.According to the composition of another embodiment as described above, there is filling piezoelectricity object The shortcomings that more times and expense increase are needed when matter and/or conductive material, but having the advantages that can be directly using positive The stomata 110 of pole oxidation film 100, so the technique for being additionally formed through hole 150 can be omitted.

In addition, in the above-described embodiments, illustrating as stomata 110 up and down, but can also be on the top of stomata 110 Or lower part does not remove barrier layer and as it is existing another embodiment.According to the composition of another embodiment as described above, Having the advantages that can more easily realize in the technique of the upper surface of barrier layer formation electrode, can prevent anode oxide film 100 Intensity decline.

As shown in figure 8, the electronic device using piezoelectric substance of the preferred embodiment of the present invention can be sent out for following sound wave It send device: voltage being applied to the electrode of the upper surface and the lower surface of setting to the piezoelectricity column portion 400 for including piezoelectric substance and is made Piezoelectricity column portion 400 vibrates up and down to generate sound wave.This sound wave sending device includes the composition of the preferred embodiment of the present invention.

In addition, the electronic device using piezoelectric substance of the preferred embodiment of the present invention can be following speaker unit: Make piezoelectricity and the electrode of the upper surface and the lower surface to setting to the piezoelectricity column portion 400 for including piezoelectric substance applies voltage Property column portion 400 vibrate up and down to generate sound.This speaker unit includes the composition of the preferred embodiment of the present invention.

On the other hand, as shown in figure 9, the electronic device using piezoelectric substance of the preferred embodiment of the present invention can be as follows Acoustic receiver device: the potential difference that the deformation of piezoelectricity column portion 400 generates based on the sound wave that reason emitter 700 generates connects Quiet down wave.This acoustic receiver device includes the composition of the preferred embodiment of the present invention.

The electronic device using piezoelectric substance of the preferred embodiment of the present invention can be that the 3D shape of ultrasonic wave is utilized to know Other device.This 3D shape identification device includes the composition of the preferred embodiment of the present invention.

Ultrasonic wave is the high-frequency sound (sound wave) that there is human ear can not hear.That is, the audible range of people is 20Hz To between 20,000Hz, the sound wave with the frequency more than it is known as ultrasonic wave.To setting to the piezoelectricity including piezoelectric substance Property column portion 400 the upper surface and the lower surface first electrode 200 and second electrode 300 apply have ultrasonic wave frequency band resonance frequency The voltage of rate and make piezoelectricity column portion 400 vibrate up and down to generate ultrasonic signal, based on reason three-dimension object it is reflected Ultrasonic signal and the potential difference that generates the deformation of piezoelectricity column portion 400 measure the shape image of three-dimension object.

At this point, ultrasonic wave is received and dispatched along all directions for including transverse direction by piezoelectricity column portion 400, from the side in piezoelectricity column portion 400 The ultrasonic wave of surface launching is not reflected by 3D shape and is directly detected by adjacent piezoelectricity column portion 400, to generate noise.So And it is filled into according to piezoelectricity column portion 400 in the through hole 150 of anode oxide film 100 up and down and by with multiple stomatas The composition that 110 anode oxide film 100 coats, in the ultrasonic wave that the side in adjacent piezoelectricity column portion 400 generates because adjacent Multiple air columns and decay, therefore the noise because of the adjacent generation of piezoelectricity column portion 400 can be effectively removed.

It can be identification finger 800 as shown in Figure 10 as the 3D shape identification device using this ultrasonic wave The ultrasonic fingerprint sensor of fingerprint 810.With the previous fingerprint recognition mode (light as the mode for only two-dimensionally reading texture Formula, electrostatic capacitance) it compares, ultrasonic fingerprint sensor dimensionally measures fingerprint, so the excellent of fingerprint can not be replicated by having Point.

In addition, the piezoelectricity column portion 400 of the preferred embodiment of the present invention can form its width dimensions smaller, therefore can be more Accurately identify the three-D pattern of fingerprint.In addition, as the 3D shape identification device using ultrasonic wave, it can be in measurement human body Internal organs or tissue 3D shape device.

As described above, being illustrated referring to the preferred embodiment of the present invention, but ordinary skill people in the art Member documented thought of the invention and can carry out the present invention in the range of field in not departing from appended claims Various amendments deform and implement.

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