阅读说明：本技术 可配置超声波成像器 (Configurable ultrasound imager ) 是由 约瑟夫·哈克 桑迪普·阿卡拉杰 亚努什·布莱泽克 布莱恩·毕考肖 于 2017-11-30 设计创作，主要内容包括：成像装置(120)包括压电元件的二维阵列(2000)。各压电元件(2002)包括：压电层；底电极(2003),设置于压电层的底侧,且配置以在发送模式期间接收发送信号并在接收模式期间产生电荷；及第一顶电极(2006),设置于压电层的顶侧；及第一导体(2007),二维阵列(2000)的第一列中的一部分压电元件的第一顶电极电性耦合至第一导体(2007)。(Imaging device (120) includes the two-dimensional array (2000) of piezoelectric element.Each piezoelectric element (2002) includes: piezoelectric layer；Hearth electrode (2003) is set to the bottom side of piezoelectric layer, and configures to receive transmission signal during sending mode and generate charge during reception pattern；And first top electrode (2006), it is set to the top side of piezoelectric layer；And first conductor (2007), the first top electrode of a part of piezoelectric element in the first row of two-dimensional array (2000) are electrically coupled to the first conductor (2007).)

1. a kind of sensor characterized by comprising

The two-dimensional array of piezoelectric element, each piezoelectric element include at least one sub- piezoelectric element and include:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；And

First top electrode is set to the top side of the piezoelectric layer；And

First top electrode of first conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to First conductor.

2. sensor according to claim 1, it is characterised in that: the piezoelectric element has the more of display broadband response A vibration mode.

3. sensor according to claim 2, it is characterised in that: the piezoelectric element in the column of the two-dimensional array Each hearth electrode is connected to conductor, and the conductor is additionally attached to together in first row.

4. sensor according to claim 3, it is characterised in that: the piezoelectric element is multiple row, all piezoelectricity in column The hearth electrode of element is connected to conductor, and being connected to the conductor of the hearth electrode of different lines is separated, and all column The top electrode of all piezoelectric elements links together.

5. sensor according to claim 1, it is characterised in that: each piezoelectric element include the first sub- piezoelectric element and Second sub- piezoelectric element, and each first sub- piezoelectric element and the second sub- piezoelectric element include top electrode and hearth electrode； The hearth electrode of the first sub- piezoelectric element is electrically coupled to the hearth electrode of the described second sub- piezoelectric element；Conductor connects The top electrode of all first sub- piezoelectric elements in column is connect, and the described second sub- piezoelectricity in another conductor connection same row is first All top electrodes of part；The conductor of connection hearth electrode is connected to all piezoelectric elements in array.

6. sensor according to claim 1, it is characterised in that: each piezoelectric element include the first sub- piezoelectric element and Second sub- piezoelectric element, and each first sub- piezoelectric element and the second sub- piezoelectric element include top electrode and hearth electrode； The hearth electrode of the first sub- piezoelectric element is electrically coupled to the hearth electrode of the described second sub- piezoelectric element；Described The top electrode of one sub- piezoelectric element is electrically coupled to the top electrode of the described second sub- piezoelectric element.

7. sensor according to claim 6, it is characterised in that: each first sub- piezoelectric element and the second son pressure Electric device further includes additional top electrode, and the additional top electrode of the first sub- piezoelectric element is electrically coupled to described second The additional top electrode of sub- piezoelectric element.

8. sensor according to claim 1, which is characterized in that further include:

Second conductor, the first top electrode electrical couplings on a part of piezoelectric element in the secondary series of the two-dimensional array To second conductor；And

First conductor is electrically coupled to second conductor.

9. sensor according to claim 1, it is characterised in that: each piezoelectric element of the two-dimensional array further includes setting The second top electrode on the top surface of the piezoelectric layer, further includes:

Second top electrode of second conductor, one group of piezoelectric element in the first row of the two-dimensional array is electrically coupled to institute State the second conductor.

10. sensor according to claim 9, it is characterised in that: each first top electrode and second top electrode It is with annular shape, and second top electrode surrounds first top electrode.

11. sensor according to claim 9, which is characterized in that further include:

Second top electrode of third conductor, a part of piezoelectric element in the secondary series of the two-dimensional array is electrically coupled to The third conductor；And

The third conductor is electrically coupled to second conductor of the first row, wherein described the of first row and secondary series One conductor also electrical couplings.

12. sensor according to claim 9, it is characterised in that: the piezoelectric layer below first top electrode First part polarizes along first direction, and the second part edge of the piezoelectric layer below second top electrode and first direction Opposite second direction polarization.

13. sensor according to claim 1, it is characterised in that: each piezoelectricity member of the two-dimensional array of piezoelectric element Part further includes the second top electrode being set on the top surface of the piezoelectric layer, a part in the column of the two-dimensional array First top electrode and second top electrode of piezoelectric element are electrically coupled to first conductor, and hearth electrode is connected to The independent conductor of each piezoelectric element in array.

14. sensor according to claim 13, it is characterised in that: pressed with the son being made of the second top electrode and hearth electrode Electric device is compared, and has different frequency characteristics by the first sub- piezoelectric element that the first top electrode and hearth electrode form, so that multiple Seaming element has broader bandwidth.

15. sensor according to claim 14, it is characterised in that: all piezoelectric elements in column have and the column All top electrodes of the hearth electrode that common conductor links together, all piezoelectric elements are linked together by using common conductor And it is connected to DC voltage.

16. sensor according to claim 14, it is characterised in that: all piezoelectric elements in the column, which have, to be connected to The hearth electrode of conductor, and be additionally coupled to send driver during sending operation；Hearth electrode is connected in operation reception pattern Reception amplifier.

17. sensor according to claim 15, it is characterised in that: the hearth electrode is connected to hair during sending operation Driver is sent, and is connected to reception amplifier during receiving operation

18. sensor according to claim 1, it is characterised in that: each piezoelectricity member of the two-dimensional array of piezoelectric element Part further includes the second top electrode, third top electrode and the 4th top electrode being set on the top surface of the piezoelectric layer；Institute Second top electrode for stating one group of piezoelectric element in the first row of two-dimensional array is electrically coupled to described first Conductor, further includes:

Second conductor, the third top electrode and the described 4th of a part of piezoelectric element in the first row of the two-dimensional array Top electrode is electrically coupled to second conductor.

19. sensor according to claim 18, which is characterized in that further include:

Third conductor, first top electrode and described second of a part of piezoelectric element in the secondary series of the two-dimensional array Top electrode is electrically coupled to the third conductor；And

4th conductor, the third top electrode and the described 4th of a part of piezoelectric element in the secondary series of the two-dimensional array Top electrode is electrically coupled to the 4th conductor；

Wherein, first conductor is electrically coupled to the third conductor, and second conductor is electrically coupled to the described 4th Conductor.

20. sensor according to claim 1, it is characterised in that: each piezoelectric element includes the first sub- piezoelectric element And the second sub- piezoelectric element, and each first sub- piezoelectric element and the second sub- piezoelectric element include top electrode and bottom electricity Pole；The hearth electrode of the first sub- piezoelectric element is electrically coupled to the hearth electrode of the described second sub- piezoelectric element；One The top electrode of all first piezoelectric elements in conductor connection column, and another conductor connects the described second sub- piezoelectricity in one row All top electrodes of element；The conductor of connection hearth electrode is connected to all piezoelectric elements in array.

21. sensor according to claim 5, it is characterised in that: be connected to by each column that the first sub- piezoelectric element forms Receiver, and another blocked operation under the mode of sending or receiving is listed in by what the second sub- piezoelectric element formed.

22. sensor according to claim 20, it is characterised in that: be connected to by each row that the first sub- piezoelectric element forms Receiver, and worked alternatively by another be listed under the mode of sending or receiving that the second sub- piezoelectric element forms.

23. sensor according to claim 1, which is characterized in that further include:

Specific integrated circuit (application-specific integrated circuit, ASIC) chip, including send and drive The array of dynamic circuit, each transmitter driving circuit are electrically coupled to the correspondence piezoelectric element of the two-dimensional array of piezoelectric element The hearth electrode,

Wherein, the pressure in the quantity of the transmitter driving circuit in the asic chip and the two-dimensional array of piezoelectric element The quantity of electric device is identical.

24. sensor according to claim 23, which is characterized in that further include:

It is provided with the substrate of the two-dimensional array of the piezoelectric element,

Wherein, first conductor is the metal conductor layer being deposited at least one of the substrate and asic chip.

25. sensor according to claim 23, which is characterized in that further include:

It one layer, is set on the asic chip and configures to absorb a part of pressure wave sent by the piezoelectric element.

26. sensor according to claim 23, it is characterised in that: each transmitter driving circuit configuration is to send monopole At least one of signal, multilevel signal and chirp signal.

27. sensor according to claim 23, it is characterised in that: the asic chip, which executes to send to piezoelectric element, to be believed Number, signal is received from piezoelectric element, amplifies from piezoelectric element received signal, polarizes to piezoelectric element, and and external electrical At least one of operation of subsystem communication.

28. sensor according to claim 23, it is characterised in that: the asic chip is convex by one or more interconnection The two-dimensional array of block and piezoelectric element integrates.

29. sensor according to claim 23, it is characterised in that: the asic chip includes with charge sensing modes work The low noise amplifier (low noise amplifier, LNA) of work.

30. sensor according to claim 29, it is characterised in that: the LNA has programmable-gain.

31. sensor according to claim 30, it is characterised in that: the gain can configure in real time, to provide time increasing Benefit compensation.

32. sensor according to claim 23, it is characterised in that: the asic chip utilizes serial peripheral interface (serial-peripheral-interface, SPI) mode is communicated.

33. sensor according to claim 31, it is characterised in that: the asic chip includes at least one transmission signal Line and at least one reception signal wire, and at least one transmission signal wire and at least one reception signal wire are led one Multiplexing on line, to be communicated with external electronic.

34. sensor according to claim 31, which is characterized in that further include:

At least one temperature-sensitive sticker, for measuring the temperature of imaging device.

35. sensor according to claim 25, it is characterised in that: the asic chip includes low-noise amplifier (low-noise-amplifier, LNA) and temperature data is received from least one temperature-sensitive sticker, and uses the temperature number Adjustment sends and receives operation to reduce temperature accordingly.

36. sensor according to claim 32, it is characterised in that: multiple show sent in a frame is reduced.

37. sensor according to claim 35, it is characterised in that: each channel includes LNA and other reception circuits Multiple reception channels reduce temperature by reducing power.

38. sensor according to claim 26, it is characterised in that: frame per second is reduced to lower temperature.

39. sensor according to claim 23, it is characterised in that: one of described transmitter driving circuit is monopole 's.

40. sensor according to claim 23, it is characterised in that: one of described transmitter driving circuit configuration with Generate the signal with equal conducting and turn-off time and symmetrical rising and falling time.

41. sensor according to claim 23, it is characterised in that: each impedance for sending driver is programmable , and it is designed to maximize the acoustical power from sensor without overheating.

42. sensor according to claim 1, it is characterised in that: the shape of one of them of the piezoelectric element and institute The shape for stating the another one of piezoelectric element is different.

43. sensor according to claim 1, it is characterised in that: the size of one of them of the piezoelectric element is different In the size of the another one of the piezoelectric element.

44. sensor according to claim 1, it is characterised in that: each piezoelectric element is vibrated with transverse mode Piezoelectricity micromachined ultrasonic sensor (Piezoelectric Micromachined Ultrasonic Transducer, pMUT)。

45. sensor according to claim 1, which is characterized in that further include:

It one layer, is set on the piezoelectric-array, towards target to be imaged, and configures to reduce the piezoelectric element and to be imaged Impedance mismatch between target.

46. sensor according to claim 45, it is characterised in that: described one layer by room temperature vulcanization (room- Temperature-vulcanizing, RTV) material formed.

47. sensor according to claim 45, it is characterised in that: one layer of the thickness is produced by the piezoelectric element Four/wavelength of raw pressure wave.

48. sensor according to claim 1, it is characterised in that: first conductor is electrically coupled to during operation DC bias voltage.

49. sensor according to claim 1, it is characterised in that: the hearth electrode is signal conductor and is connected to transmission One of circuit and reception circuit, and the top electrode is connected to the DC bias source including ground connection.

50. sensor according to claim 29, it is characterised in that: each transmitting line and the reception circuit are collection At circuit.

51. a kind of imaging device characterized by comprising

The two-dimensional array of piezoelectric element, each piezoelectric element of the two-dimensional array of piezoelectric element include at least one sub- piezoelectricity member Part, and include:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；And

First top electrode and the second top electrode, are set to the top side of the piezoelectric layer；And

First top electrode of first conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to First conductor；

First circuit is electrically coupled to first conductor and configuration to handle through the first conductor received signal；

Second top electrode of second conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to Second conductor；

Switch, has first terminal and Second terminal, and the first terminal is electrically coupled to second conductor；

Second circuit, for handling signal；

Driver is sent, for sending a signal to second conductor；And the Second terminal of the switch is selectively It is coupled to the second circuit and one sent in driver.

52. imaging device according to claim 51, it is characterised in that: each first circuit and the second circuit packet Include low noise amplifier.

53. a kind of imaging device characterized by comprising

The two-dimensional array of piezoelectric element, each piezoelectric element of the two-dimensional array of piezoelectric element include at least one sub- piezoelectricity member Part, and include:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；And

First top electrode and the second top electrode, are set to the top side of the piezoelectric layer；And

First top electrode of first conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to First conductor；

First circuit is electrically coupled to first conductor and configuration to handle through the received signal of first conductor；

Second top electrode of second conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to Second conductor；

Switch, has first terminal and Second terminal, and the first terminal is electrically coupled to second conductor；

Second circuit, for handling signal；

Driver is sent, for sending a signal to second conductor；And

The Second terminal of the switch is selectively coupled to one of the second circuit and the transmission driver.

54. imaging device according to claim 53, it is characterised in that: each first circuit and the second circuit packet Include low noise amplifier.

55. a kind of imaging device characterized by comprising

First substrate includes:

Each piezoelectric element of the two-dimensional array of piezoelectric element, the two-dimensional array of piezoelectric element includes:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；

First top electrode and the second top electrode, are set to the top side of the piezoelectric layer；And

First conductor and the second conductor are electrically coupled to first top electrode and second top electrode respectively；And

The second substrate includes:

Each circuit unit of the two-dimensional array of circuit unit, the two-dimensional array of circuit element includes:

First circuit, is electrically coupled to first conductor of piezoelectric element and configuration is received with handling by first conductor Signal；

Switch, has first terminal and Second terminal, and what the first terminal was electrically coupled to a piezoelectric element described second leads Body；

Second circuit, for handling signal；

Driver is sent, for sending a signal to second conductor；And

The Second terminal of the switch is selectively coupled to one of the second circuit and the transmission driver.

56. a kind of for controlling the circuit of multiple piezoelectric elements characterized by comprising

First conductor, for sending driving signal to passing through one or more of piezoelectric elements；And

Second conductor, for sending transducing signal to passing through one or more of piezoelectric elements；

Each circuit unit of multiple circuit elements includes:

First switch has first terminal, is electrically coupled to the first electrode of second conductor and piezoelectric element；

Second switch, has first terminal and Second terminal, and the first terminal of the second switch is electrically coupled to described First conductor；

Driver is sent, the Second terminal of second switch is electrically coupled to, and is passing through the second switch When the Second terminal receives the driving signal, configure to send a signal to the first electrode of piezoelectric element；And

Third switch, has first terminal and Second terminal, and the first terminal of the third switch is electrically coupled to described The Second terminal of the Second terminal of second switch, the third switch is electrically connected to the electrode of piezoelectric element.

57. sensor according to claim 56, it is characterised in that: during the operation of multiple piezoelectric elements, described Two conductors are electrically coupled to DC bias voltage.

58. the method as described in claim 56, which is characterized in that further include:

Third conductor,

Wherein, each circuit element of multiple circuit elements further includes the 4th switch with first terminal and Second terminal, described The first terminal of 4th switch is electrically coupled to the third conductor, the Second terminal electrical property coupling of the 4th switch It is bonded to the third electrode of piezoelectric element.

59. sensor according to claim 58, it is characterised in that: during the operation of multiple piezoelectric elements, described Three conductors are electrically coupled to DC bias voltage.

60. the method as described in claim 56, which is characterized in that further include:

Second circuit is electrically coupled to second conductor and configuration to handle through the second conductor received signal；

61. a kind of method for polarized piezoelectric element, the piezoelectric element are electrically coupled to specific integrated circuit (application-specific integrated circuit, ASIC) chip, and including hearth electrode, be set to the bottom Piezoelectric layer on electrode and the first top electrode and the second top electrode being set on the piezoelectric layer, which comprises electrically The hearth electrode is connected to ground；

Apply positive electricity and is depressed into first top electrode；

Apply negative electricity and is depressed into second top electrode；And

The piezoelectric element is set to be subjected to prolonged temperature, so that first of the piezoelectric layer below first top electrode Divide and polarize along first direction, and the second part of the piezoelectric layer below second top electrode is along opposite with first direction Second direction polarization.

62. a kind of imaging device characterized by comprising

The two-dimensional array of piezoelectric element, each piezoelectric element include at least one sub- piezoelectric element and include:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；And

First top electrode is set to the top side of the piezoelectric layer；And

Specific integrated circuit (application-specific integrated circuit, ASIC) chip, including for driving The array of the circuit of the two-dimensional array of dynamic pressure electric device, each circuit are electrically coupled to corresponding piezoelectric element；

Wherein, the first row or line of the imager of a part of piezoelectric element in first row including the two-dimensional array are by being connected A part of circuit synchronization for controlling the part of the piezoelectric element in the first row of the two-dimensional array is formed.

63. imaging device according to claim 62, it is characterised in that: multiple transmissions in the asic chip are driven Dynamic circuit and multiple piezoelectric elements in the two-dimensional array of piezoelectric element are identical or less.

64. imaging device according to claim 62, it is characterised in that: one in the secondary series including the two-dimensional array Second line of part piezoelectric element is controlled the part of the piezoelectric element in the secondary series of the two-dimensional array by conducting A part of circuit formed, multiple piezoelectricity in multiple piezoelectric elements in the First Line and second line Element is different.

65. imaging device according to claim 62, it is characterised in that: the first row or line of the imager couple To driver is sent, the transmission driver applies electric signal to the First Line, so that the piezoelectricity in the First Line Element emits pressure wave.

66. imaging device according to claim 62, it is characterised in that: the first row or line of the imager couple To reception amplifier, the reception amplifier receives the electric signal from the First Line and handles the electric signal.

67. imaging device according to claim 62, it is characterised in that: each circuit includes reception amplifier, is also wrapped It includes:

Multiplexer is electrically coupled to the reception amplifier of the circuit during reception pattern, and configures with multichannel Transmit the signal from the reception amplifier.

68. the imaging device as described in claim 67, which is characterized in that further include:

It receives AFE(analog front end) (receiver analogue-front-end, AFE), is electrically coupled to the multiplexer.

69. imaging device according to claim 62, it is characterised in that: each circuit includes sending driver, is also wrapped It includes:

Multiplexer is coupled to the transmission driver of the circuit during sending mode, and configures with multiplexing It is sent to the signal for sending driver.

70. the imaging device as described in claim 69, which is characterized in that further include:

Beam-former is sent, multiplexer is electrically coupled to.

71. imaging device according to claim 69, it is characterised in that: the impedance for sending driver is programmable , and it is designed to maximize the acoustical power from sensor without overheating.

72. imaging device according to claim 62, it is characterised in that: during the period 1, the institute of the imager Have it is described column driven by transmission driver, wherein it is described send driver include under electronic control by switch connection one or Multiple circuits on multiple integrated circuits；During second round, each column of the imager are connected to reception amplifier, wherein The amplifier includes under program by multiple circuits of switch connection.

73. imaging device according to claim 62, it is characterised in that: the part for sending driver is being based on FPGA Transmission Beam-former in realize.

74. imaging device according to claim 62, it is characterised in that: the part of reception amplifier is in AFE(analog front end) reality It is existing, including time gain amplifier, low-pass filter, simulation numerical digit sensor, numerical digit withdrawal device and the generation number for being connected to FPGA Position output.

75. sensor according to claim 1, it is characterised in that: the piezoelectric element configuration is to send and receive at least one Ultrasonic waveform, the ultrasonic waveform have the bandwidth of multiple vibration frequencies including each piezoelectric element；It is sent out from piezoelectric element The pressure waveform sent by the voltage pulse of application appropriate time section by being realized on the top electrode and the hearth electrode.

76. sensor according to claim 2, it is characterised in that: the piezoelectric element configuration is to send and receive at least one Ultrasonic waveform, the ultrasonic waveform have the bandwidth of multiple vibration frequencies including each piezoelectric element；It is sent out from piezoelectric element The pressure waveform sent by the voltage pulse of application appropriate time section by being realized on the top electrode and the hearth electrode.

77. according to the sensor of claim 76, it is characterised in that: the sensor only has sending function.

78. according to the sensor of claim 76, it is characterised in that: the positive amplitude of maximum of AC drive voltage is positive 5V, maximum Negative voltage is negative 5V, and two voltages are nominal value, and tolerance is within 5%.

79. according to the sensor of claim 76, it is characterised in that: for additional column, send driving amplitude with the additional column And change.

Technical field

The invention belongs to a kind of imaging device, especially a kind of to have configurable ultrasound line imager The imaging device of (configurable ultrasonic line imagers).

Background technique

One kind is for being imaged and being shown its image to human body or animal body interior tissue, skeleton, blood flow or organ Non-intrusion type imaging system/probe, need to send the signal in vivo, and receive the hair from the physical feeling being imaged Penetrate or reflect signal.Commonly used in imaging system sensor (transducers) be transceiver (transceivers) and Some transceivers are based on optoacoustic or ultrasonic wave effect.In general, transceiver is used to be imaged, but not necessarily it is only limited to be imaged. For example, transceiver can be used for medical imaging, the flow measurement in pipeline, loudspeaker and microphone array, lithotrity (lithotripsy), for the local organization heating for the treatment of or for the high intensity focused ultrasound (highly of operation Intensive focused ultrasound, HIFU).The biography being made of block piezoelectricity (piezoelectric, PZT) material System sensor usually requires very high voltage pulse to generate transmission signal, usually 100V or higher.This high voltage meeting High power is caused to dissipate, because power consumption/dissipation in sensor and driving voltage is square proportional.The temperature of detecting head surface It is restricted, the power of limitation probe consumption, because the power in consumption is directly proportional to the heat that probe generates.In traditional system In, the generation of heat allows probe to need cooling configuration, this increases the manufacturing cost and weight of probe.In general, traditional The weight of probe is also a problem, because most ultrasonic examination personnel using these probes know that this can be such that meeting muscle meets with It is damaged.

Conventional ultrasonic wave for medical imaging is popped one's head in compound usually using PZT material or other piezoelectric ceramics and polymer Material (piezo ceramic and polymer composites).Probe can usually accommodate sensor and some other electronics Device has the device for showing that image on the display unit.It, can letter in order to manufacture the conventional blocks PZT element of sensor Thick piezoresistive material flitch singlely is cut into the PZT element of big rectangular shape.The manufacture of the PZT element of these rectangular shapes is non- Chang Anggui because manufacturing process is related to accurately cutting rectangle thickness PZT or ceramic material, and is mounted on substrate with accurate spacing On.In addition, the impedance of sensor is much higher than transmission/reception electronic device impedance of sensor.

In traditional system, transmission/reception electronic device of sensor is typically remote from probe setting, and needs sensor Miniature diameter coaxial cable between electronic equipment.In general, cable needs accurate delay length and impedance matching, and have Sensor is passed through cable connection to electronic device by effect ground, often needs to additional impedance matching network.

The progress of micro-processing technology (micro-machining technologies) so that sensor and actuator, such as Capacitive micromachined ultrasound wave sensor (capacitive micromachined ultrasound transducers, cMUT) With piezoelectricity micromachined ultrasonic sensor (piezoelectric micromachined ultrasound transducers, PMUT), can be effectively formed on substrate.Compared to the traditional sensors with huge piezoelectric material, the volume of pMUT compared with Small and manufacturing cost is lower, while it has simpler and higher performance interconnected relationship between electronic device and sensor, This provides greater flexibility on operating frequency, and can produce higher-quality image.

Although the basic conception of these sensors is disclosed in nineteen ninety for initial stage, this concept is in the process of business implementation In encounter many challenges.For example, traditional cMUT sensor is particularly easy to due to the charge accumulation during high voltage operation It breaks down or is drifted about in performance, it is difficult to generate enough high acoustic pressures at a lower frequency, and substantially be nonlinear. Traditional pMUT be it is a kind of have perspective alternative solution, but the problem of send and receive inefficiency, it is still necessary to opposite Higher operating voltage and bandwidth is limited.Therefore, it needs to operate and have at the lower voltage with the pMUT of enhancing efficiency There is high bandwidth.

Summary of the invention

In embodiment, imaging device includes the two-dimensional array of piezoelectric element.Each piezoelectric element includes: piezoelectric layer；Bottom electricity Pole is set to the bottom side of piezoelectric layer, and configures to receive transmission signal during sending mode and generate during reception pattern Charge；And first top electrode, it is set to the top side of piezoelectric layer；And first conductor, a part pressure in the first row of two-dimensional array First top electrode of electric device is electrically coupled to the first conductor.

In embodiment, imaging device includes: the two-dimensional array of piezoelectric element, each piezoelectricity of the two-dimensional array of piezoelectric element Element includes at least one sub- piezoelectric element, and includes: piezoelectric layer；Hearth electrode is set to the bottom side of piezoelectric layer；And first top electricity Pole and the second top electrode, are set to the top side of piezoelectric layer；And first conductor, a part of piezoelectricity member in the first row of two-dimensional array First top electrode of part is electrically coupled to the first conductor；First circuit, is electrically coupled to the first conductor and configuration is passed through with handling The received signal of first conductor；Second conductor, the second top electrode of a part of piezoelectric element in the secondary series of two-dimensional array It is electrically coupled to the second conductor；Switch, has first terminal and Second terminal, and first terminal is electrically coupled to the second conductor；The Two circuits, for handling signal；Driver is sent, for sending a signal to the second conductor；And the Second terminal selection of switch Property be coupled to second circuit and send driver in one.

In embodiment, imaging device includes: the two-dimensional array of piezoelectric element, each piezoelectricity of the two-dimensional array of piezoelectric element Element includes at least one sub- piezoelectric element, and includes: piezoelectric layer；Hearth electrode is set to the bottom side of piezoelectric layer；And first top electricity Pole and the second top electrode, are set to the top side of piezoelectric layer；And first conductor, a part of piezoelectricity member in the first row of two-dimensional array First top electrode of part is electrically coupled to the first conductor；First circuit, is electrically coupled to the first conductor and configuration is passed through with handling The received signal of first conductor；Second conductor, the second top electrode of a part of piezoelectric element in the first row of two-dimensional array It is electrically coupled to the second conductor；Switch, has first terminal and Second terminal, and first terminal is electrically coupled to the second conductor；The Two circuits, for handling signal；Driver is sent, for sending a signal to the second conductor；And the Second terminal selectivity of switch Ground is coupled to one of second circuit and transmission driver.

In embodiment, imaging device includes transceiver substrate and specific integrated circuit (application-specific Integrated circui, ASIC) chip.Transceiver substrate includes: the two-dimensional array of piezoelectric element, the two dimension of piezoelectric element Each piezoelectric element of array includes: piezoelectric layer；Hearth electrode is set to the bottom side of piezoelectric layer；Hearth electrode is set to the bottom of piezoelectric layer Side；Hearth electrode is set to the bottom side of piezoelectric layer；First top electrode and the second top electrode, are set to the top side of piezoelectric layer；And first Conductor and the second conductor are electrically coupled to the first top electrode and the second top electrode respectively.Asic chip includes: the two of circuit element Array is tieed up, each circuit element of the two-dimensional array of circuit element includes: the first circuit, and be electrically coupled to piezoelectric element first is led Body and configuration to handle through the first conductor received signal；Switch, has first terminal and Second terminal, and first terminal is electrical It is coupled to the second conductor of a piezoelectric element；Second circuit, for handling signal；Driver is sent, for sending a signal to the Two conductors；And the Second terminal of switch is selectively coupled to one of second circuit and transmission driver.

In embodiment, the circuit for controlling multiple piezoelectric elements includes: the first conductor, during sending mode, is used In sending driving signal to passing through one or more of piezoelectric elements；And second conductor, during reception pattern, for sending out Send transducing signal to passing through one or more of piezoelectric elements.Each circuit element of multiple circuit elements includes: first to open It closes, there is first terminal, be electrically coupled to the first electrode of the second conductor and piezoelectric element；Second switch has first terminal And Second terminal, the first terminal of second switch are electrically coupled to the first conductor；Driver is sent, second is electrically coupled to and opens The Second terminal of pass, and when receiving signal by the Second terminal of second switch, configure to send a signal to piezoelectric element First electrode；And third switch, there is first terminal and Second terminal, the first terminal of third switch is electrically coupled to second and opens The Second terminal of the Second terminal of pass, third switch is electrically connected to the electrode of piezoelectric element.

In embodiment, a method of for polarized piezoelectric element, piezoelectric element is electrically coupled to specific integrated circuit (application-specific integrated circuit, ASIC) chip, and including hearth electrode, be set to hearth electrode On piezoelectric layer and the first top electrode and the second top electrode that are set on piezoelectric layer, comprising steps of being electrically connected hearth electrode To ground；Apply positive electricity and is depressed into the first top electrode；Apply negative electricity and is depressed into the second top electrode；And piezoelectric element is made to be subjected to prolonged temperature Degree, so that the first part of the piezoelectric layer below the first top electrode polarizes along first direction, and the piezoelectricity below the second top electrode The second part of layer polarizes along the second direction opposite with first direction.

In embodiment, imaging device includes: the two-dimensional array of piezoelectric element, and each piezoelectric element includes at least one sub- pressure Electric device and include: piezoelectric layer；Hearth electrode is set to the bottom side of piezoelectric layer；And first top electrode, it is set to the top of piezoelectric layer Side；And specific integrated circuit (application-specific integrated circuit, ASIC) chip, including be used for The array of the circuit of the two-dimensional array of piezoelectric element is driven, each circuit is electrically coupled to corresponding piezoelectric element；Wherein, including two It ties up in first row of the First Line imager of a part of piezoelectric element in the first row of array by conducting control two-dimensional array A part of circuit of the part of piezoelectric element is formed simultaneously.

Detailed description of the invention

The embodiment of the present invention will be referred to, example will be illustrated in the drawings.These figures are intended to illustrative and not limiting.Although The present invention is described substantially with the content of these embodiments, it will be appreciated that, it is not intended to limit the scope of the invention to this A little specific embodiments.

Fig. 1 is the schematic diagram according to the imaging system of the embodiment of the present disclosure.

Fig. 2 is the schematic diagram according to the ultrasound imager of the embodiment of the present disclosure.

Fig. 3 A is the side view according to the illustrative transceiver array of the embodiment of the present disclosure.

Fig. 3 B is the top view according to the transceiver tile of the embodiment of the present disclosure.

Fig. 4-8 is according to the embodiment of the present disclosure for the step of manufacturing illustrative piezoelectric element.

Fig. 9 is the schematic diagram according to the piezoelectric element of the embodiment of the present disclosure.

Figure 10 A is the schematic diagram according to the piezoelectric element of the embodiment of the present disclosure.

Figure 10 B is that the symbol of the piezoelectric element in Figure 10 A indicates.

Figure 10 C is the diagrammatic cross-section according to the illustrative piezoelectric element of the embodiment of the present disclosure.

Figure 10 D is the schematic diagram according to the piezoelectric element of the embodiment of the present disclosure.

Figure 10 E is the schematic diagram according to the piezoelectric element of the embodiment of the present disclosure.

Figure 10 F is the schematic diagram according to the piezoelectric element of the embodiment of the present disclosure.

Figure 10 G is the bottom view according to the piezoelectric element in Figure 10 F of the embodiment of the present disclosure.

Figure 10 H is the cross-sectional view according to the piezoelectric element in Figure 10 F of the embodiment of the present disclosure.

Figure 11 is the schematic diagram according to the piezoelectric element of the embodiment of the present disclosure.

Figure 12-16 is according to the embodiment of the present disclosure for the step of manufacturing illustrative piezoelectric element.

Figure 17 A be according to the embodiment of the present disclosure before polarization process, during and after piezoelectric material dipole side To.

Figure 17 B is the flow chart according to the embodiment of the present disclosure for the illustrative process of polarized piezoelectric layer.

Figure 18 A is the schematic diagram according to the image-forming assembly of the embodiment of the present disclosure.

Figure 18 B is the schematic diagram according to the image-forming assembly of the embodiment of the present disclosure.

Figure 19 A-1 is according to the transceiver substrate of the embodiment of the present disclosure and the top view of asic chip.

Figure 19 A-2 is the side view according to the image-forming assembly of the embodiment of the present disclosure.

Figure 19 B-1 is according to the transceiver substrate of the embodiment of the present disclosure and the top view of asic chip.

Figure 19 B-2 is the side view according to the image-forming assembly of the embodiment of the present disclosure.

Figure 19 C is according to the transceiver substrate of the embodiment of the present disclosure and the top view of asic chip.

Figure 19 D is according to the transceiver substrate of the embodiment of the present disclosure and the top view of asic chip.

Figure 19 E is according to the transceiver substrate of the embodiment of the present disclosure and the top view of asic chip.

Figure 19 F is according to the transceiver substrate of the embodiment of the present disclosure and the top view of asic chip.

Figure 19 G is according to the transceiver substrate of the embodiment of the present disclosure and the top view of asic chip.

Figure 20 is the schematic diagram that the array of piezoelectric elements of two and three dimensions imaging can be executed according to the embodiment of the present disclosure.

Figure 21 is the schematic diagram according to the array of the piezoelectric element of the embodiment of the present disclosure.

Figure 22 is the schematic diagram according to the array of the piezoelectric element of the embodiment of the present disclosure.

Figure 23 is the schematic diagram according to the array of the piezoelectric element of the embodiment of the present disclosure.

Figure 24 is the schematic diagram according to the array of the piezoelectric element of the embodiment of the present disclosure.

Figure 25 is the schematic diagram according to the array of the piezoelectric element of the embodiment of the present disclosure.

Figure 26 is the schematic diagram according to the array of the piezoelectric element of the embodiment of the present disclosure.

Figure 27 is the schematic diagram according to the array of the piezoelectric element of the embodiment of the present disclosure.

Figure 28 is the schematic diagram according to the imaging system of the embodiment of the present disclosure.

Figure 29 is the schematic diagram according to the imaging system of the embodiment of the present disclosure.

Figure 30 is the embodiment that the piezoelectric element of circuit element is coupled to according to the embodiment of the present disclosure.

Figure 31 is the circuit for being used to control multiple piezoelectric elements according to the embodiment of the present disclosure.

Figure 32 is the circuit for being used to control multiple piezoelectric elements according to the embodiment of the present disclosure.

Figure 33 is the transmission drive signal waveform according to the embodiment of the present disclosure.

Figure 34 is the transmission drive signal waveform according to the embodiment of the present disclosure.

Figure 35 is the transmission drive signal waveform according to the embodiment of the present disclosure.

Figure 36 shows the input/output signal of the various circuits in the image-forming assembly according to the embodiment of the present disclosure.

Figure 37 A is according to the embodiment of the present disclosure using angle as the curve graph of the amplitude of the transmission pressure wave of function.

Figure 37 B is the window that apodization process is used for according to the embodiment of the present disclosure.

Figure 38 is the schematic diagram according to the image-forming assembly of the embodiment of the present disclosure.

Specific embodiment

For illustrative purposes, in the following description sets forth specific details to provide understanding of this disclosure.However, for It should be apparent to those skilled in the art that the disclosure can be practiced in the case where without these details.In addition, art technology Personnel will know that the embodiment of the present disclosure described below can be embodied in various ways, on such as tangible computer-readable medium Process, equipment, system, device or method.

Those skilled in the art will be appreciated that: (1) optionally executing certain manufacturing steps；；(2) manufacturing step can be not limited to Particular order as described herein；(3) certain manufacturing steps include the steps that being completed at the same time, and can be executed in different order.

Elements/components shown in figure are the explanation of the exemplary embodiments of the disclosure, and are intended to avoid the fuzzy disclosure. " embodiment (one embodiment) ", " preferred embodiment (preferred embodiment) ", " implementation in specification The reference of example (an embodiment) " or " multiple embodiments (embodiments) " refers in conjunction with the specific of this embodiment description Feature, structure, characteristic or function are included at least one embodiment, and can be in more than one embodiment.In specification In the term that occurs everywhere, such as " (in one embodiment) in one embodiment ", " (in an in embodiment Embodiment) " or " (in embodiments) in various embodiments " is not necessarily referred to the same embodiment or multiple Embodiment.Term " including (include) ", " including (including) ", " include (comprise) " and " include (comprising) " it should be understood open term, and subsequent any list is example, is not necessarily referring to be confined to institute's list Mesh.Any title for this paper is only used for organizational goal, not for limitation specification or the scope of the claims.In addition, It is not necessarily to be construed as limiting in specification certain being merely to illustrate for term everywhere.

In embodiment, pMUT sensor and sensor module can be used for generating the shadow of human body/animal body internal Picture and other treatment uses, wherein ultrasonic beam is used to heat tissue to reach healing effect, or makes high-power ultrasonic wave beam It focuses to execute micro- operation.In embodiment, piezoelectric element can also be used for tomography applications.

In embodiment, the manufacturing cost of pMUT can be reduced by application modern semiconductors and chip processing technologies.In In embodiment, by thin film piezoelectric layer spin coating or it can be splashed to semiconductor core on piece, then be patterned to generate piezoelectric sense Device, each piezo sensor have two or more electrodes.In embodiment, each piezoelectric element may be designed to have with specific frequency Rate transmitting or the ability for receiving signal, are known as centre frequency and second and/or additional frequency.Hereinafter, term piezoelectricity Element, pMUT, transceiver and pixel are used interchangeably.

Fig. 1 is the schematic diagram according to the imaging system 100 of the embodiment of the present disclosure.As shown, system 100 can include: at As device 120, in sending mode/generation and internally organ 112 (such as heart) transmission pressure wave 122 in the process；And it is logical Cross the device 102 that communication channel 130 sends and receives signal to imager.In embodiment, internal 112 can will be a part of Pressure wave 122 is reflected towards imager 120, and imager 120 can capture the pressure wave of reflection and in reception pattern/give birth in the process At electric signal.Electronic signal can be sent to device 102 by imager 120, and device 102 can be used electric signal in display/screen The image of organ or target is shown on curtain 104.

In embodiment, imager 120 can be used for executing one-dimensional image, also referred to as A sweep (A-Scan)；Two-dimensional imaging, Also referred to as B-scan (B scan)；Three-dimensional imaging, otherwise referred to as C-scan (C scan)；And doppler imaging (Doppler imaging).In addition, imager can switch to various imaging patterns under program.

In embodiment, imager 120 can also be used for obtaining the image of internal animal organ.Imager 120 can also be used in Determine the blood flow direction and speed in artery and vein, by such as doppler mode imaging in and also measure tissue hardness.In reality It applies in example, pressure wave 122 can be sound wave, ultrasonic wave or photoacoustic waves, may pass through human body/animal body and by internal, group Knit or artery and vein reflection.

In embodiment, imager 120 can be mancarried device, and wirelessly (use association by communication channel 130 View, such as 802.11 agreements) or letter communicated with device 102 by cable (for example, USB2, USB 3, USB 3.1 and USB-C) Number.In embodiment, device 102 can be mobile device, such as mobile phone or iPad, or can show image to user Fixed arithmetic unit.

In embodiment, imager can configure with while send and receive ultrasonic waveform.Specific piezoelectric element can be matched Set to send pressure wave to the target organ that is imaged, and other piezoelectric elements can receive the pressure wave reflected from target organ and Charge is generated in response to received wave.

Fig. 2 is the schematic diagram according to the imager 120 of the embodiment of the present disclosure.In embodiment, imager 120 can be super Acoustic imaging device.As shown in Fig. 2, imager 120 can include: transceiver tile 210, for sending and receiving pressure wave；Coating 212, it is operated as lens, for controlling pressure-wave propagation direction and/or focusing pressure wave, and is also used as transceiver tile Impedance interface between piece and human body 110；Control unit 202, such as asic chip (or abbreviation ASIC), for controlling transceiver Tile 210 is simultaneously coupled to sensor tile 210 by convex block；Field formula may be programmed lock array (Field Programmable Gate Arrays, FPGAs) 214, for controlling the component of imager 120；Circuit 215, before handling/adjustment signal, such as simulation It holds (Analogue Front End, AFE)；Absorbent treatment 203 is generated from sensor tile 210 for absorbing and is passed to circuit 215 The wave broadcast；；Communication unit 208, for carrying out data with external device (ED) (such as device 102) by one or more ports 216 Communication；Memory body 218, for storing data；Battery 206, for providing the component of electric energy to imager；And display 217 can Selection of land is used for the image of displaying target organ.

In embodiment, device 102 can have display/screen.In the case, display may not include in imager In 120.In embodiment, imager 120 can receive electric power from device 102 by one of port 230.In the case, it is imaged Device 120 may not include battery 206.It should be noted that one or more components of imager 120 are combined into a piece electrical member Part.Similarly, each component of imager 120 can be realized in one or more electrical components.

In embodiment, user can apply on the skin of human body 110 before human body 110 is directly contacted with coating 212 Gel is smeared, so that the impedance matching of the interface between coating 212 and human body 110 can be improved；Also that is, the pressure of interface The loss of wave 122 is reduced, and is also reduced towards the loss of the back wave of imager 120 in interface.In embodiment, transceiver Tile 210 is mountable on substrate and attaches to absorbent treatment.This layer absorbs any ultrasonic signal emitted in the reverse direction, Otherwise these ultrasonic signals can be by reflection and the quality of interference images.

As described below, coating 212 can be only flat matching layer, to maximize the hair of the acoustical signal from sensor to human body It send, vice versa.In embodiment, the thickness of coating 212 can be the pressure wave generated by sensor tile 210 four/ One wavelength.In the case, it is not required along the light beam focusing on the elevation direction of column length direction, because it can controlled It is electrically realized in unit 202.Nonetheless, in some circumstances, lens may be designed as a focus.Imager 120 Reflection signal can be used to carry out the image that ㄒ forms organ 112, and result can be shown on screen in various formats, such as figure, figure The statistical data of the image of table and with or without organ 112.

In embodiment, such as the control unit 202 of ASIC can be assembled into a unit together with transceiver tile.At it In its embodiment, control unit 202 can be located at the outside of imager 120, and be electrically coupled to transceiver tile by cable 210.In embodiment, imager 120 may include the shell of packaged unit 202-215 and the thermal energy for dissipating by component generation Cooling mechanism.

Fig. 3 A is that there are three the signals of the illustrative transceiver array of transceiver tile 210 according to the embodiment of the present invention tool Figure.Tile can on flat surfaces or on curved surfaces.Fig. 3 B is according to the embodiment of the present disclosure including one or more pressures The top view of the transceiver tile 210 of electric device 302.As shown, transceiver tile 210 may include 304 He of transceiver substrate The one or more piezoelectric elements 302 being configured in transceiver substrate 304.

Different from the use of the legacy system of block piezoelectric element, in embodiment, pMUT array 302 can be formed in chip On, and chip can be cut to form multiple transceiver tiles 210.This process can reduce manufacturing cost, because of transceiver tile 210 can be with high capacity and low cost manufacturing.In embodiment, the diameter of chip can be and many in the range of 6~12 inches PMUT array can batch micro operations.In addition, in embodiment, as discussed in Figure 18 and 19, for controlling the collection of pMUT array 302 It may be formed in asic chip at circuit, so that pMUT array 302 can be tightly connected to matched integrated circuit, optionally, In Within 25 μm~100 μm.For example, transceiver tile 210 can have 1024 pMUT elements 302 and be connected to matched ASIC core Piece, this asic chip have an appropriate number of circuit for driving 1024 pMUT elements 302.

In embodiment, a piezoelectric element 302 can have any suitable shape, such as square, rectangle and circle etc.. In embodiment, two or more piezoelectric elements can be connected to form bigger pixel element.As shown in Figure 3B, when being construed as When as device, there can be the two-dimensional array of the piezoelectric element 302 along orthogonal direction configuration.In embodiment, in order to form thread elements, The column of N column piezoelectric element 302 can be electrically connected parallel connection.Then, this thread elements can provide sending and receiving for ultrasonic signal, class It is similar to sending and receiving for the ultrasonic signal realized by continuous piezoelectric element, this continuous piezoelectric element is almost the N of an element Times.This thread elements is interchangeably referred to as column or line or thread elements.It should be appreciated that tile is configurable to other shapes, such as round Shape or other shapes.In embodiment, one or more temperature-sensitive stickers 320 are mountable in sensor tile 210 to measure The temperature of tile 210.It should be noted that imager 120 may include one or more temperature-sensitive stickers, for measuring imager Temperature at 120 each position.

In order to imitate the thread elements of traditional design, the shape of the piezoelectric element of given width may need unusual height.Example Such as, the thread elements of traditional design can be 280 μm wide and 8000 μm of height, and thickness can be 100 μm.However, in transceiver tile On piece 210, thread elements is designed using multiple identical piezoelectric elements 302 and is advantageous, wherein each element can have in its feature Frequency of heart.In embodiment, when multiple piezoelectric elements 302 link together, composite construction (that is, thread elements) be can be used as One thread elements, centre frequency are made of the centre frequency of all component pixels.In modern semiconductor processes, these centers Frequency matches each other well, and and thread elements centre frequency have very small deviation.It will be compared with using only a center frequency The line of rate can also mix the pixel of several different center frequencies to generate broadband the wide line.

In embodiment, piezoelectric element 302 has suspending film associated there, when the stimulation for being exposed to this frequency When, with centre frequency vibration and behave like resonator.There is selectivity relevant to these resonators, can be described as Q because Son.In embodiment, for ultrasound imager, Q factor can usually be designed to be very low (close near 1 or its), and pass through The design of pixel combines and is applied to the load of pixel in actually using to realize.It in embodiment, can be by applying one layer of RTV Or other materials to the top surface of piezoelectric element to provide load, wherein load can promote closer impedance matching, for transmitting And receive the impedance matching between the sensor surface of pressure wave and the human body parts being imaged.In embodiment, low Q factor and Match good centre frequency thread elements can be made substantially to behave like line imaging element is the same, this line imaging element substantially has There is a centre frequency.In embodiment, load may also include the matching layer below sensor, wherein the waveform emitted is absorbed sound Device absorbs.

In embodiment, for example, each piezoelectric element 302 can be spaced each other 250 μm of center to center.It is further simplified, Shape can be rectangular.In order to imitate traditional thread elements, the column of piezoelectric element 302 can be connected to each other.For example, 24 in column Piezoelectric element 302 can form the thread elements of about 6mm high, and the width of each element is 0.25mm.In embodiment, metal can be used Interconnection layer realizes this connection in chip-scale.

It should be noted that transceiver tile 210 may include from one or more films of substrate suspension, and piezoelectric element 302 may be disposed on film.In embodiment, as described in following combination Fig. 4-8, film be may be disposed under each piezoelectric element 302.In In embodiment, more than one piezoelectric element can be set on a film 309.In embodiment, can piezoelectric element 302 its One of lower section more than one film is set.The more information configured about piezoelectric element on film can be in November, 2017 21 days, entitled " Imaging devices having piezoelectric transducers " while pending U.S. It is found in patent application case Reference Number 15/820,319, this application case is integrally incorporated herein by reference.

For traditional block piezoelectric element, the voltage potential range on top and hearth electrode is 100V~200V.For Traditional pMUT, the voltage potential on top and hearth electrode is about 30V.In embodiment, it in order to further decrease this voltage, presses Electric device 302 may include scaled thin piezoelectric layer, and piezoelectric layer may have about 2 μm or smaller thickness.Fig. 4-8 To be used for the step of manufacturing illustrative piezoelectric element according to the embodiment of the present disclosure.Fig. 4 is the film 406 being set on substrate 402 Top view.Fig. 5 is the cross-sectional view according to the film intercepted and substrate of 4-4 along the embodiment of the present disclosure.(in embodiment, base Plate 402 can correspond to the transceiver substrate 304 in Fig. 3 B.) as shown, in embodiment, film layer 404 can be deposited on substrate On 402, and pothole 408 can be formed to remove a part of substrate 402, so that being formed can be in vertical direction relative to substrate 402 The film 406 of vibration.In embodiment, pothole 408 can be formed by traditional chip processing technologies, such as be etched.Implementing In example, substrate 402 can be formed by material identical with film layer 404.In alternative embodiments, substrate 402 can be by being different from The material of film layer 404 is formed.It should be understood that pothole 408, other portions can be formed after the other components for forming piezoelectric element Part can be such as top conductor (812 in Fig. 8).

In embodiment, film 406 has circular projection region.However, showing to those skilled in the art And be clear to, film 406 can have other suitable geometries.

Fig. 6 is the hearth electrode 602 that 406 top of film is set in film layer 404 and be configured at according to the embodiment of the present disclosure Top view.Fig. 7 is the top view for the piezoelectric layer 706 being set on hearth electrode 602 according to the embodiment of the present disclosure.In embodiment In, piezoelectric layer 706 can have the view field similar to hearth electrode 602, so that piezoelectric layer 706 can cover the whole of hearth electrode 602 A part.

Fig. 8 is the top view according to the piezoelectric element of the embodiment of the present disclosure.As shown, top electrode 808 may be disposed at pressure In electric layer 706 and it is configured at 406 top of film.In embodiment, conductor 812 may be disposed on top electrode 808 and electrical coupling It is bonded to top electrode 808, and conductor 810 and 811 can reach hearth electrode 602 by one or more through-holes 814.In embodiment, Top electrode 808, piezoelectric layer 706 and hearth electrode 602 can form two-terminal piezoelectric element, and when electric in applying on top and hearth electrode When pressure, film 406 can vibrate.It in embodiment, can when making deformation of thin membrane by pressure wave during reception pattern/process Charge is generated in top electrode and hearth electrode.

Fig. 9 is the schematic diagram according to the piezoelectric element 900 of the embodiment of the present disclosure.As shown, piezoelectric layer 910 may be disposed at Between first electrode (X) 906 and second electrode (O) 904.In embodiment, first electrode (X) 906 can pass through conductor (X) 908 It is connected to the ground or direct current biasing, and second electrode (O) 904 can be connected to circuit by signal conductor (O) 902 and (not show in Fig. 9 Out).In embodiment, the piezoelectric element 800 in Fig. 8 is the illustrative embodiment of piezoelectric element 900, and piezoelectric element 900 It may be disposed on film layer (such as 404 in Fig. 5).

In traditional piezoelectric element, piezoelectric layer is very thick, close to about 100 μm, and usually requires to apply over the piezoelectric layer Add+100 to -100V AC voltage to generate the pressure waves of sufficient intensity to realize medical imaging.This AC driving signal Frequency is usually above 1MHz for the application of medical imaging usually near the resonance frequency of piezoelectric structure.In legacy system In, the power consumed when driving piezoelectric element is proportional to C*V2, and wherein C is the capacitor of piezoelectric element, and V is piezoelectric layer both ends Maximum voltage.In general, when sending pressure wave, multiple piezoelectric wires are driven together with slightly different phase delay, with Focus pressure wave or control pressure-wave propagation direction.Driving leads to the temperature liter on piezoelectric element surface while multiple piezoelectric wires It is high.Generally speaking, it is desirable to be no more than specific threshold temperature, so as not to injure the object being imaged.This will limit drivable Line number, and its period can be driven.

In embodiment, compared to traditional block piezoelectric element, piezoelectric layer 910 is thinner, about 1 to 2 μ m-thick.In embodiment In, the driving signal of lower voltage can be used for piezoelectric element 900 by substantially cutting down for thickness, and wherein voltage reduces about piezoelectricity The amount that the thickness of layer 910 reduces, to keep similar electric field strength.For example, in embodiment, on two electrodes 904 and 906 Voltage potential can be in the range of about 1.8V to the 12.6V from peak value to peak value.Due to the piezoelectric layer 910 of similar piezoelectric material Thickness reduce, the capacitor of piezoelectric element 900 can increase.For example, working as 10 times of driving voltage reduction and the thickness of piezoelectric layer 910 When also reducing by 10 times, capacitor increases by 10 times, and 10 times of lower power consumption.The reduction of this power consumption also reduces heat in piezoelectric element Generate the promotion with temperature.Therefore, in embodiment, using lower driving voltage and relatively thin piezoelectric layer；Compared to tradition Piezoelectric element, the temperature on the surface pMUT can be reduced.Alternately, in embodiment, for given temperature, compared to conventional pressure Electric device can drive more pMUT elements to irradiate bigger target area simultaneously.This may make scanning target quicker, special It is not if desired multiple transmittings to scan the entire part of target to form an image.In embodiment, it can be used different Steering angle and multiple transmittings can combine image data obtained to scan target area to obtain higher-quality image.

Compared to traditional block piezoelectric element, in embodiment, while the ability of more piezoelectric elements being driven to may make There are more coverings, and then emitting times needed for the entire aperture of minimum covering in sensor aperture when each transmitting, thus Improve frame per second.Frame per second is the number for measuring the imaging of a target minute clock.It can it is expected to be imaged with high frame per second, ought especially be related to When histokinesis, mobile tissue can make image blur.In embodiment, compared to traditional block piezoelectric element, with higher The imager 120 of frame per second operation can produce the image of the quality of enhancing.

In embodiment, the quality of image can be improved by combining the lower noise frame that many frame images are a synthesis. In embodiment, right compared to traditional block piezoelectric element by using low-voltage and low-power pMUT with high frame per second In the promotion that pMUT temperature gives, the quality of image is can be improved in this averaging.In embodiment, the synthetic aperture of ultrasonic imaging Method can be used for the combination of image.The various frames of image can also have different steering angles, or from orthogonal steering direction with light Easy object observing.

Figure 10 is the schematic diagram according to the piezoelectric element 1000 of the embodiment of the present disclosure.Figure 10 B is the piezoelectric element in Figure 10 A 1000 symbol indicates.As shown, piezoelectric element 1000 is similar to piezoelectric element 900, the difference is that piezoelectric element There are two more than electrode for 1000 tools.More specifically, piezoelectric element 1000 can include: top electrode (O) 100；First hearth electrode (X) 1006；Second hearth electrode (T) 1012；The piezoelectric layer 1010 being set between top electrode and hearth electrode；It is electrically coupled to bottom respectively Three conductors 1002,1008 and 1014 in portion and top electrode 1004,1006 and 1012.(hereinafter, at the top of term (top) and Two opposite sides of bottom (bottom) only finger pressure electric layer；Also that is, top electrode can be not necessarily arranged on hearth electrode.)

However, the piezoelectric element of single layer piezoelectric beam is shown exclusively for the purposes of illustration in Figure 10 A；In embodiment, The multilayer piezoelectric element being made of multiple piezoelectricity sublayers and electrode can be used.In embodiment, piezoelectric layer 1010 may include PZT, At least one of PZT-N, PMN-Pt, AlN, Sc-AlN, ZnO, PVDF and LiNiO 3.

Figure 10 C is the diagrammatic cross-section according to the piezoelectric element 1000 of the embodiment of the present disclosure.As shown, piezoelectric element 1000 may be disposed in the film layer 1034 supported by substrate 1030.In embodiment, pothole 1032 can be formed in substrate 1030 In to limit a film.It in embodiment, can be by forming film layer 1034 in depositing SiO2 on substrate 1030.

In embodiment, piezoelectric element 1000 may include piezoelectric layer 1010 and be electrically connected to signal conductor (O) 1004 First electrode (O) 1002.In embodiment, signal conductor (O) 1004 can be by depositing Ti O2 and gold in film layer 1034 Belong to layer to be formed.In embodiment, piezoelectric layer 1010 can be formed by sputtering technology or by sol gel process.

In embodiment, second electrode (X) 1006 can be grown on 1010 top of piezoelectric layer and be electrically connected to the second conductor 1008.Third electrode (T) 1012 can also be grown on the top of piezoelectric layer 1010, and be disposed adjacent with the second conductor 1012, but with the Two conductors (X) 1008 electrically isolate.In embodiment, second electrode (X) 1006 and third electrode (T) 1012 can be by piezoelectricity Metal layer is deposited on layer 1010, and patterned metal layer is formed.In embodiment, electrode 1002,1006 and 1012 View field can have any suitable shape, such as square, rectangle, circle and ellipse etc..

Such as piezoelectric element 1000, the usable metal of first electrode (O) 1002, through-hole and interlayer dielectric (interlayer dielectrics) is electrically connected to conductor (O) 1004.In embodiment, first electrode (O) 1002 can be with Piezoelectric layer 1010 directly contacts.Third conductor (T) 1014 can deposit or be grown on piezoelectric layer relative to first electrode (O) 1002 On 1010 other side.

Figure 10 D is the schematic diagram according to the piezoelectric element 1030 of the embodiment of the present disclosure.As shown, piezoelectric element 1030 can Including two sub- piezoelectric element (or short subcomponent) 1031-1 and 1031-2.In embodiment, a subcomponent can fill for three terminals It sets；Also that is, it can have a top electrode 1032-1 (or 1032-2), two hearth electrode 1034-1 (or 1034-2) and 1036-1 (or 1036-2) and piezoelectric layer 1035-1 (or 1035-2).In embodiment, top electrode 1032-1 can be led by public Body (O) 1031 is electrically connected to top electrode 1032-2, and the first hearth electrode (X) 1034-1 can be by common conductor (X) 1038 electrically It is connected to the first hearth electrode (X) 1034-2, and the second hearth electrode (T) 1036-1 can be electrically connected by common conductor (T) 1040 To the second hearth electrode (T) 1036-2.In embodiment, piezoelectric element 1030 may be disposed on a film or a subcomponent can It is set on individual film.It will be obvious to those skilled in the art that conductor (O) 1032-1 can be with figure The similar mode of piezoelectric element shown in 12-16 is electrically connected to electricity using metal, through-hole, interlayer dielectric (ILD) etc. Pole (O) 1031.

In embodiment, conductor (X) 1038 and conductor (T) 1040 can be all grounded during effective operation of imager (or being connected to direct current biasing).In embodiment, electrode (O) 1032-1 and 1032-2 can be by public transmitter driving circuit and public Electric signal driving, signal is usually the signal waveform for surrounding center sensor frequency.For example, if centre frequency is 2MHz, The sinusoidal waveform of 2MHz or square-wave waveform are applied to piezoelectric element 1030.This waveform can make piezoelectric element 1030 humorous with 2MHz Vibration, and pressure wave, such as 122 are issued from sensor surface.Pressure wave can be from the target organ to be imaged reflection.In embodiment In, the pressure wave of reflection can hit the piezoelectric element 1030 for being connected to signal receiver.Piezoelectricity wave can pass through piezoelectric layer 1035-1 The charge in piezoelectric element 1030 is converted into 1035-2.In embodiment, this charge can carry out letter by amplifier and filter Number processing, and finally (does not show) digitisation by A/D converter in Figure 10 D, then the numerical digit withdrawal device with data finally with FPGA or graphics processing unit (Graphical Processing Units, GPU) connection.These are from multiple piezoelectric elements Processing signal can then be construed as image again.The signal waveform that driving sends driver can also be frequency variation signal or phase The encoded signal of variable signal or other complexity, such as chirp (chirps) or Ge Lei code (Golay codes).

Figure 10 E is the schematic diagram according to the piezoelectric element 1050 of the embodiment of the present disclosure.As shown, piezoelectric element 1050 can Including two subcomponents 1051-1 and 1051-2.In embodiment, a subcomponent can be both-end sub-device；Also that is, it can have Have a top electrode 1052-1 (or 1052-2), a hearth electrode 1054-1 (or 1054-2) and piezoelectric layer 1056-1 (or 1056-2).In embodiment, top electrode (O) 1052-1 can be electrically connected to top electrode (O) by common conductor (O) 1051 1052-2, and hearth electrode (X) 1054-1 can be electrically connected to hearth electrode (X) 1054-2 by common conductor (X) 1058.Implementing In example, piezoelectric element 1050 may be disposed on a film or a subcomponent can be set on individual film.

Figure 10 F is the schematic diagram according to the piezoelectric element 1070 of the embodiment of the present disclosure.Figure 10 G is according to the embodiment of the present disclosure Piezoelectric element 1070 bottom view.As shown, piezoelectric element 1070 can include: top electrode (O) 1074；First hearth electrode (X)1080；Second hearth electrode (T) 1076；The piezoelectric layer 1075 being set between top and hearth electrode；Electrical couplings bottom respectively With three conductors 1072,1078 and 1082 of top electrode 1074,1076 and 1080.(conductor is not shown in Figure 10 G.) implementing It is with annular shape in each first and second hearth electrode in example, and the second hearth electrode (X) 1076 surrounds the first hearth electrode (T) 1080。

Figure 10 H is the schematic diagram according to the piezoelectric element 1085 of the embodiment of the present disclosure.As shown, piezoelectric element 1085 can It is operated using transverse mode, and includes: substrate 1091；The film 1090 of substrate is fixed in one end；It is electrically coupled to conductor 1089 hearth electrode (O) 1092；Piezoelectric layer 1088；And it is electrically coupled to the top electrode 1086 of conductor 1087.In embodiment, Film 1090 can be fixed to substrate 1091 in one end to vibrate with transverse mode；As shown in arrow 1093, also that is, piezoelectric element It can be operated with transverse mode.

It should be noted that piezoelectric element 1085 can have any appropriate number of top electrode.Also, it is noted that can In installing more than one piezoelectric element on film 1090.It shall yet further be noted that substrate 1091 and film 1090 can be by an integral types Main body is formed, and forms film by etching substrate.

Figure 11 is the schematic diagram according to the piezoelectric element 1100 of the embodiment of the present disclosure.As shown, electrode (O) 1104 can be set It is placed on the top surface of piezoelectric layer 1110, and is electrically connected to the conductor (O) 1102 that can be connected to circuit.Conductor (T1) 1108, Conductor (T2) 1114 and conductor (X) 1118 can be respectively connected to hearth electrode (T1) 1106, electrode (T2) 1112 and electrode (X) 1116.Electrode (T1) 1106, electrode (X) 1116 and electrode (T2) 1112 may be disposed on the bottom surface of piezoelectric layer 1110.In reality It applies in example, piezoelectric element 1100 may be disposed on a film or three individual films.

Figure 10 A to 11 be each tool there are two terminal (O and X) or three terminals (O, X and T) or four terminals (O, X, T1 and T2 piezoelectric element (or subcomponent)).However, it will be apparent to those skilled in the art that more than one Piezoelectric element (or subcomponent) can have that there are four more than terminal.For example, piezoelectric element can have top and bottom (O) electrode and It is more than three hearth electrodes.

Figure 12-16 is to be used to manufacture according to the embodiment of the present disclosure to have the step of illustrative piezoelectric element there are four terminal. Figure 12 is the top view of film 1206, can be by forming film layer 1204 on substrate 1202 and form in substrate pothole 1208 form.Figure 13 is the cross-sectional view of the structure in Figure 12 of 12-12 interception along the line.In embodiment, film 1204 can lead to Cross suitable chip processing technologies deposition.

Figure 14 is in the top view of the layer structure formed in film layer 1204, and Figure 15 is according to the embodiment of the present disclosure, edge Line 14-14 interception, the cross-sectional view of the layer structure in Figure 14.As shown, three top electrodes 1223,1224-1 and 1224-2, Piezoelectric layer 1220 and hearth electrode 1222 can be formed in film layer 1204.In embodiment, top electrode 1223,1224-1 and 1224-2, piezoelectric layer 1220 and hearth electrode 1222 can be deposited by suitable chip processing technologies, such as deposition, sputtering, pattern Change etc..

Figure 16 is the top view according to the piezoelectric element 1600 of the embodiment of the present disclosure.As shown, three conductors 1620, 1622-1 and 1622-2 can be electrically coupled to electrode 1223,1224-1 and 1224-2 respectively.In addition, conductor (O) 1610 can pass through One or more through-holes 1614 are electrically coupled to hearth electrode 1222.In embodiment, electrical ground and source plane can be by logical Hole 1614 and conductor (O) 1610 reach hearth electrode 1222.In embodiment, each conductor 1620,1622-1 and 1622-2 can be connected To ground or direct current biasing.In embodiment, conductor 1620 can be connected to ground or the first direct current biasing, and conductor 1622-1 and 1622-2 can be connected to ground or the second direct current biasing.

Generally, due to asymmetry intrinsic in the crystal structure of piezoelectric material, electric polarity can be developed and be generated Electric dipole.In the crystal structure of macroscopic, dipole is random direction, as shown in the left side of Figure 17 A.When material is by machine When tool stress, a dipole rotates towards a direction from its original orientation, this direction can by the total electronics being stored in dipole and Mechanical energy minimization.If all dipoles are initially random direction (also that is, net pole cancellations), rotation will not be significantly changed The macroscopic of material polarizes only；Therefore, the piezoelectric effect shown is negligible.Therefore, during original state, dipole is needed It will more or less direction, referred to herein as polarization process in the same direction.The direction of dipole alignment is known as polarization direction.Figure 17 For according to the embodiment of the present disclosure before polarization process, during and after piezoelectric material dipole direction.

As shown, each dipole moment is misaligned before polarization process.In polarization process, dipole moment can be aligned with It is directed toward identical direction.After polarization, dipole moment can keep being aligned, although there are still the elements of some random directions.In embodiment In, it can be by the way that piezoelectric material be placed in high temperature steady electric field to execute polarization process, so that dipole be forced to be aligned.

In embodiment, the piezoelectric element 1000 in Figure 10 A can be polarized, so that electrode (X) 1006 and electrode (T) 1012 The part piezoelectric layer of top can polarize in the opposite direction.Compared to the pressure output for using the configuration of polarization direction to obtain, This kind of polarization can lead to the identical pressurization output for sending voltage.In addition, in embodiment, reception spirit can be improved in this kind of polarization Sensitivity, wherein compared to one polarization direction configuration, enhances the pressure wave of reflection diacritically to generate bigger charge output.

Figure 17 B is the flow chart according to the embodiment of the present disclosure for the illustrative process of polarized piezoelectric element 1600.In order to Piezoelectric element 1600 is set to polarize, piezoelectric element 1600 is mountable to the (step 1728) in high temperature room, and hearth electrode 1222 can Be coupled to (step 1722)；And the first top electrode 1224-1 (or 1224-2) can be coupled to high positive voltage, such as 15V (step 1724), and the second top electrode 1223 can couple supreme negative voltage, such as -15V (step 1726).Then, piezoelectric element 1600 can In being subjected to prolonged high temperature (step 1728) in room.

Part piezoelectric layer 1220 according to the polarity of the first and second high voltages, below two electrodes 1224-1 and 1224-2 It polarizes on direction that can be identical or opposite as the part piezoelectric layer 1220 of 1223 lower section of electrode.In embodiment, for example, for Particular piezoelectric materials can realize polarization by applying high voltage on the electrode 30 minutes under high temperature (usually 150 DEG C). For example, for the piezoelectric layer of 1 μ m-thick, can apply from signal electrode to the+15V of T electrode and from signal electrode to X electrode- 15V.Once piezoelectric material is polarized, then each X and T electrode can be grounded or connected to non-zero DC biasing, and conductor (O) 1610 can It is connected to asic chip, to be driven during sending operation by transmission driver, or ASIC can be connected to during receiving operation LNA (such as 1811 in Figure 18 A) in chip.In embodiment, direct current biasing can improve the sensitivity of piezoelectric element 1600.

Figure 18 A is the image-forming assembly 1800 according to the embodiment of the present disclosure.As shown, image-forming assembly 1800 can include: receive Send out device substrate 1802 (being similar to transceiver tile 210)；Asic chip 1804 is electrically coupled to transceiver substrate.In embodiment In, transceiver substrate 1802 may include one or more piezoelectric elements 1806, wherein each piezoelectric element may be disposed at one or more On a film.It in embodiment, can be more than one piezoelectric element be arranged on a film.In embodiment, in transceiver Substrate 1802 is mutually connected to after asic chip 1804, and the polarization of piezoelectric layer can be performed.It should be noted that ASCI1804 can be by suitable Substrate replace, this substrate includes multiple circuits for driving the piezoelectric element 1806 in transceiver substrate 1802.

It in embodiment, can be in transceiver tile/substrate after transceiver substrate 3D is mutually connected to asic chip 1804 Polarization is executed on 1802.In traditional piezoelectric element, sensor tile be coupled to for drive piezoelectric element circuit it Afterwards, it is difficult to execute polarization process in transceiver tile on piece.The reason is that polarization needs to apply to circuit high voltage to control piezoelectricity Element, and high voltage may damage circuit.It in comparison, in embodiment, can be in the sensing integrated with asic chip 1804 Polarization is executed on device substrate 1802.In embodiment, may make can be in all first electrodes of piezoelectric element for asic chip 1804 It is upper to apply desired voltage, and high voltage can be applied to all second or additional electrode.

In embodiment, each piezoelectric element 1806a to 1806n can have two or more electrodes, and these electrodes can It is connected to the driving/reception electronic device being contained in asic chip 1804.In embodiment, each piezoelectric element (such as It 1806a) may include the top conductor for being electrically connected to conductor (O) (such as 1814a) and two that are electrically connected to conductor (X, T) Hearth electrode (such as 1810a and 1812a).In embodiment, conductor 1810a can be electrically coupled to direct current biasing (X) 1832a or Ground, and conductor (T) 1812a can be coupled to direct current biasing (T) 1834a or ground.

In embodiment, asic chip 1804 may include one or more circuit 1842a to 1842n, each circuit electrical property coupling It is bonded to one or more piezoelectric element 1806a to 1806n；An and control unit for control circuit 1842a to 1842n 1840.In embodiment, each circuit (for example, 1842a) may include sending driver (1813a), reception amplifier (referred to as amplification Device) (such as 1811a), switch (such as 1816a), this, which is switched, has the terminal for being electrically coupled to conductor (O) (1814a), And another is coupled to the terminal switched between two conductors for sending driver 1813a and amplifier 1811a.It is sending (Tx) during mode/processing, switch 1816a can will send driver 1813a and be connected to piezoelectric element 1806a, so that signal quilt It is sent to the top electrode of piezoelectric element 1806a.During reception (Rx) mode/processing, switch 1816a can be by amplifier 1811a It is connected to piezoelectric element 1806a, so that signal is sent to amplifier 1811a from the top electrode of piezoelectric element 1806a.

It should be noted that sending driver 1813a may include various electronic components.However, for clarity, sending driving Device 1813a is indicated by a driver.However, it will be apparent to those skilled in the art that sending driving Device may include having to be permitted multi-functional more complicated driver.Electronic component for handling reception signal can be connected to amplifier 1811a, even if only indicating an amplifier 1811a in Figure 18 A.In embodiment, amplifier 1811a can be low noise amplification Device (low noise amplifier, LNA).In embodiment, circuit 1842n can have same or similar with circuit 1842a Structure.

In embodiment, all direct current biasing (X) 1832a to 1832n can be connected to identical direct current biasing or ground；Also That is, all conductor (X) 1810a to 1810n can be connected to single direct current biasing or ground connection.Similarly, all direct current biasings (X) 1834a to 1834n can be connected to identical direct current biasing or different direct current biasings；Also that is, all conductors (T) 1812a extremely 1812n can be connected to single direct current biasing or ground connection.

In embodiment, conductor (X, T and O) 1810,1812 and 1814 usable interconnection techniques and be connected to asic chip 1804；For example, copper post interconnection or convex block (for example, 1882 in Figure 18 B), as shown in arrow 1880.In embodiment, ASIC core Circuit block in piece 1804 can be used interconnection 1830 in the PERCOM peripheral communication of asic chip 1804.In embodiment, 1830 are interconnected The closing line from another pad outside the pad to asic chip on asic chip 1804 can be used to realize.In embodiment In, other than wire bonding pad, the bump pad in other types of interconnection, such as asic chip 1804 also can be used or divide again Cloth convex block.

In embodiment, it can be realized in the external of asic chip 18042 including the LNA1811 in circuit 1842, such as The reception AFE(analog front end) (AFE) of part.In embodiment, LNA can be stayed in asic chip 1804, and another LNA and can be compiled Journey gain amplifier (programmable gain amplifie, PGA) can stay in AFE.The gain of each LNA1811 can be real When program so that LNA become imager needed for time gain compensation function (time gain compensation Function, TGC) a part.

In embodiment, the building of low-voltag transistor technology can be used in LNA1811, and if being exposed to needed for traditional sensors High-incidence power transmission pressure, then be likely to be broken.Therefore, in conventional systems, high voltage transmission/reception switch can be used for sending height Voltage receives circuit with low-voltage and separates.This switch can be very huge and expensive, will use high voltage (High Voltage, HV) mistake Journey, and reduce the signal for being sent to LNA.In comparison, in embodiment, low-voltage can be used, and accordingly, it is possible to no longer Need the high-voltage part of legacy system.In addition, in embodiment, being switched, being can avoid by traditional HV by eliminating traditional HV The decline of performance caused by switching.

In embodiment, piezoelectric element 1806 can be connected to LNA1811 by switch 1816 during reception pattern. LNA1811 can convert the charge to the voltage signal of the amplification of tool low noise；Charge in piezoelectric element 1806 is by the pressure that reflects Reeb generates, and pressure wave applies pressure on the piezoelectric element.The signal-to-noise ratio for receiving signal can be decision and be reconstructed image matter The key factor of amount.Therefore, it may be desirable to reduce the natural noise of LNA itself.It in embodiment, can be by increasing LNA1811's The mutual conductance of input stage reduces noise, such as more current is used in input stage.The increase of electric current will lead to power consumption and heat Increase.In embodiment, pMUT1806 can be with low voltage operating and very close to asic chip 1804；Therefore, compared to height The traditional sensors of voltage operation, the power that low pressure pMUT1806 is saved can be used for reducing the noise in LNA1811, to obtain Acceptable given overall temperature rise.

Figure 18 is the schematic diagram according to the image-forming assembly 1850 of the embodiment of the present disclosure.In embodiment, transceiver substrate 1852 and asic chip 1854 can be analogous respectively to transceiver substrate 1802 and asic chip 1804.In conventional systems, it is used for The electronic device of driving piezoelectric transducer is typically remote from piezoelectric transducer setting, and is connected to piezoelectric sensing using coaxial cable Device.In general, coaxial cable increases the parasitic load on electronic device, such as additional capacitor；And additional capacitor causes to close The loss of key performance parameter, for example, noise increase and signal power loss.In comparison, as shown in figure 18b, by using Low ESR three-dimensional (3D) interconnection mechanism (as shown in arrow 1880), such as Cu column or solder projection 1882 or chip engagement or class Like the combination of method or these technologies, sending driver (or equivalent circuit) 1862a to 1862n may be connected directly to piezoelectricity member Part (or equivalent pixel) 1856a to 1856n+i.In embodiment, transceiver substrate 1852 is being integrated into asic chip 1854 When, circuit 1862 can be far from less than 100 μm settings in the vertical direction of piezoelectric element 1856.In embodiment, it may be unnecessary to use Any conventional equipment of impedance matching between drive circuit 1862 and piezoelectric element 1856 can be further simplified design simultaneously Improve the power efficiency of image-forming assembly 1800.The impedance of circuit 1862 can be designed to match the demand of piezoelectric element 1856.

In embodiment, in Figure 18 A, each piezoelectric element 1806a to 1806n can be electrically connected to positioned at asic chip Corresponding each circuit 1842a to 1842n in 1804.In embodiment, this configuration can make imager generate 3-dimensional image.It is similar Ground, in Figure 18 B, each piezoelectric element 1856a to 1856m can have three leads indicated by X, T and O.From each piezoelectricity member The lead of part can be electrically connected in asic chip 1854 corresponding each circuit 1862a extremely by interconnection means 1882 1862m.In addition, in embodiment, a line of piezoelectric element example can be electrically coupled to a public affairs such as 1856n+1 to 1856n+i Cocircuit 1862n.In embodiment, transmitter driving circuit 1862n can be realized with a transmission driver.In alternate embodiment In, transmitter driving circuit 1862n can be realized with multiple drive power device, to promote various imaging patterns.

It will be obvious to those skilled in the art that asic chip 1854 can have it is similar with circuit 1862n Any appropriate number of circuit.In embodiment, control unit 1892 can have the ability of configuration piezoelectric element；In two-dimensional image In pixel array, it is whether horizontal or be it is vertical, configure its length and place it in transmission, reception, polarization or idle mode. In embodiment, after transceiver substrate 1852 is combined by three-dimensional integration technology 1882 with asic chip 1854, control is single First 1892 executable polarization process.In embodiment, transmitter driving circuit 1843 can be realized with multiple drive power device；Such as Figure 34 institute Show, wherein more than two output level can be had by sending driver output.Figure 34 is the implementation that output level can be 0V, 6V or 12V Example.It should be understood that these voltages can be difference, -5V, 0V and+5V may be, for example,.Sending driver can also be for driving letter Number two-stage actuator, as shown in figure 33.

In embodiment, lead 1882a to 1882n can be the electrode for pulse to be applied to piezoelectric element 1856 (O) signal conductor.Similarly, lead 1884a can be used for 1884n, 1886a to 1886n and 1888a to 1888n and piezoelectricity Element 1856a is to 1856n+i signal of communication.It should be noted that other appropriate number of leads can be used to come and image-forming assembly 1800 signals of communication/data.

In embodiment, each lead (X) 1886 and lead (T) 1888 can be connected to ground or direct current biasing terminal.Implementing In example, numerical digit control lead 1894 can be numerical digit control bus, and including one or more leads, for control and solve at As needed for the various functions in component 1850.For example, these leads allow using communication protocol asic chip 1854 can Programmatic, such as serial peripheral interface (SPI) or other agreements.

In embodiment, piezoelectric element 1806 (or 1856) and control electrical devices/circuits 1842 (or 1862) can be same Develop on semiconductor chip.In alternative embodiments, transceiver substrate 1802 (or 1852) and asic chip 1804 (or 1854) can be separately fabricated, and be combined with each other by 3D interconnection technique, such as use the metal interconnection technology of convex block 1882.In reality It applies in example, interconnection technique can eliminate low yield multiplier effect (low yield multiplication effect), to reduce Manufacturing cost and the yield for independently maximizing component.

In embodiment, lead 1862 can be the electrode (O) for pulse to be applied to piezoelectric element 1806 to 1862n Signal conductor.Class mutually, lead 1864a to 1864n, 1866a to 1866n and 1868a can be used for 1868n and piezoelectric element 1806a is to 1806n signal of communication.It should be noted that it is logical with image-forming assembly 1800 other appropriate number of leads to can be used Believe signal/data.

As described above, LNA1811 can be operated under charge sensing modes, and each all with programmable-gain, it can be real-time Configuration is to provide gain compensation.In embodiment, as described in Fig. 3 B, one or more temperature-sensitive stickers are mountable in imager In 120.In embodiment, ASIC can from temperature-sensitive sticker receive temperature data, and using temperature data adjustment imaging frame rate or The signal-to-noise ratio of LNA1811.

Figure 19 A-1 is the top view of transceiver substrate 1902 and asic chip 1906；Figure 19 A-2 is to be implemented according to the disclosure The side view of the image-forming assembly 1901 of example.As shown, image-forming assembly 1901 may include transceiver substrate 1902, transceiver substrate 1902 are mutually connected to asic chip 1906 by suitable interconnection mechanism (such as convex block).Hereinafter, convex block is expressed as interconnection machine Structure, even if other suitable interconnection mechanisms can be used to replace convex block.

In embodiment, each piezoelectric element 1904 can be two-terminal piezoelectric element, and wherein piezoelectric element is by two electrode O It is symbolically indicated with X.In embodiment, circuit element 1908 may include the electronics for driving corresponding piezoelectric element 1904 Component, wherein circuit element 1908 is symbolically indicated by transmission driver.In embodiment, image-forming component 1910 may include pressure Electric device 1904 and circuit element 1908, piezoelectric element 1904 can be electrically connected to circuit element 1908 by two convex blocks.

Figure 19 B-1 is the top view of transceiver substrate 1911 and asic chip 1913, and Figure 19 B-2 is to be implemented according to the disclosure The side view of the image-forming assembly 1915 of example.As shown, image-forming assembly 1915 can be similar to image-forming assembly 1901, difference exists Two sub- circuit elements are electrically coupled to by three convex blocks in two sub- piezoelectric elements.More specifically, piezoelectric element 1912 wraps Include two sub- piezoelectric elements, each sub- piezoelectric element can be two two-terminal piezoelectric elements, but the X electrode of two sub- piezoelectric elements that This electrical couplings.In embodiment, each O electrode of sub- piezoelectric element can be electrically coupled to the hair of corresponding sub-circuit element 1914 Driver is sent, the X electrode of two sub- piezoelectric elements can be electrically coupled to the public electric terminal of circuit element 1914.In this way, each In image-forming component 1917, piezoelectric element 1912 can pass through three bump interconnections to circuit element 1914.

Figure 19 C is the top view of transceiver substrate 1920, and the asic chip 1924 according to the embodiment of the present disclosure.Such as figure Shown, transceiver substrate 1920 can be similar to transceiver substrate 1902, the difference is that three sub- piezoelectric elements pass through four Convex block is electrically coupled to three sub- circuit elements.More specifically, piezoelectric element 1922 includes three sub- piezoelectric elements, each sub- piezoelectricity Element can be two-terminal piezoelectric element, and the X electrode of three sub- piezoelectric elements thermocouple can connect each other.In embodiment, sub A O electrode of piezoelectric element can be electrically coupled to the transmission driver of corresponding sub-circuit element, and the X of three sub- piezoelectric elements Electrode can be electrically coupled to the public electric terminal of circuit element 1926.In this way, piezoelectric element 1922 can pass through four bump interconnections To circuit element 1926.

It should be noted that piezoelectric element can have more than two terminal.Figure 19 D is the transmitting-receiving according to the embodiment of the present invention The top view of device substrate 1930 and asic chip 1934.As shown, transceiver substrate 1930 can be similar to transceiver substrate 1902, the difference is that a piezoelectric element 1932 can be electrically coupled to circuit element 1936 by three convex blocks.In embodiment In, O electrode can be coupled to the transmission driver of circuit element 1936 by convex block, and X and T electrode can be coupled by two convex blocks To circuit element 1936.

Figure 19 E is according to the transceiver substrate 1940 of the embodiment of the present disclosure and the top view of asic chip 1944.As schemed Show, piezoelectric element 1942 may include two sub- piezoelectric elements, and each sub- piezoelectric element can be three terminal piezoelectric elements, two son pressures The X electrode of electric device can electrical couplings each other.In embodiment, each O electrode of sub- piezoelectric element can pass through convex block electrical couplings To the transmission driver of corresponding sub-circuit element, the X electrode of two sub- piezoelectric elements can be electrically coupled to circuit by convex block Each T electrode of element 1946, sub- piezoelectric element can be electrically coupled to circuit element 1946 by convex block.In this way, piezoelectric element 1942 can pass through five bump interconnections to circuit element 1946.

Figure 19 F is according to the transceiver substrate 1950 of the embodiment of the present disclosure and the top view of asic chip 1954.As schemed Show, piezoelectric element 1952 may include two sub- piezoelectric elements, and each sub- piezoelectric element can be three terminal piezoelectric elements, and two The X electrode of sub- piezoelectric element can electrical couplings each other, and the T electrode of two sub- piezoelectric elements can electrical couplings each other.Implementing In example, each O electrode of sub- piezoelectric element can be electrically coupled to the transmission driver of corresponding sub-circuit element by convex block, and two The X electrode of sub- piezoelectric element can be electrically coupled to circuit element 1956 by convex block.Moreover, the T electrode of two sub- piezoelectric elements Circuit element 1956 can be electrically coupled to by convex block.In this way, piezoelectric element 1952 can pass through four bump interconnections to circuit elements Part 1956.

Figure 19 G is according to the transceiver substrate 1960 of the embodiment of the present disclosure and the top view of asic chip 1964.As schemed Show, piezoelectric element 1962 may include two sub- piezoelectric elements, and sub- piezoelectric element can be three terminal piezoelectric elements, two sub- piezoelectricity The O electrode of element can electrical couplings each other, the X electrode of two sub- piezoelectric elements can electrical couplings, and two sub- piezoelectricity members each other The T electrode of part can electrical couplings each other.In this way, piezoelectric element 1962 can pass through three bump interconnections to circuit element 1966.

Figure 20 is the signal according to the m n array 2000 of the piezoelectric element 2002-11 to 2002-mn of the embodiment of the present disclosure Figure.As shown, each piezoelectric element can be two-terminal piezoelectric element (such as piezoelectric element 900 in Fig. 9), and have electrically It is coupled to the electrode (O) (such as 2003-11) of conductor (O) (such as 2004-11), and electrode (X) passes through common conductor (X) 2007 It is electrically connected to ground or direct current biasing.In embodiment, each signal conductor (O) can be by circuit element (such as 1908) individual tubes Reason.In embodiment, each conductor (O) (for example, 2004-mn) can be electrically coupled to the transmission driver of circuit element, and piezoelectricity (2006-11 to 2006-mn) can be connected to common conductor (X) 2007 to all X electrodes of element arrays.In embodiment, array 2000 may be disposed in transceiver substrate, and be electrically coupled to asic chip, such as m × n+1 convex block by interconnection mechanism, such as In conjunction with described in Figure 19 A to 19G.More specifically, m × n conductor (O) 2004-11 to 2004-mn can be coupled by m × n convex block To m × n transmission driver of asic chip, and common conductor (X) 2007 can be coupled to asic chip by a convex block.In In embodiment, the exemplary arrangement of this description is imaged for executing 3D, wherein each piezoelectric element (including at least one sub- piezoelectricity member Part) unique information can be provided in an array.In embodiment, each piezoelectric element can have one or more films, and with film Various modes and frequency vibration.In embodiment, each piezoelectric element 2002 can be by with the voltage's distribiuting in Figure 33 and 34 3300 and 3400 pulsed drive.

In embodiment, the O electrode in each column is (for example, 2003-11 to 2003-m1) can be electrically coupled to common conductor. For example, the circuit element in asic chip can be controlled electrically, so that O electrode in each column can electrical couplings each other.In this configuration In, the O electrode in each column can receive identical electric pulse by public transmission driver, or during sending mode, pass through tool There are multiple drivers of identical electric drive signal to receive identical electric pulse.Similarly, the O electrode in each column can be in reception pattern Charge is sent to common amplifier simultaneously by period.In other words, the piezoelectric element in each column can be used as line unit (or equivalent line Element) operation.

Figure 21 is the signal according to n × n array 2100 of the piezoelectric element 2102-11 to 02012-mn of the embodiment of the present disclosure Figure.As shown, each piezoelectric element can be three terminal piezoelectric elements, and including electrode O, X and T.In embodiment, X electrode (for example, X11, X21 ..., Xm1) can connect by column in a series arrangement, and (X11 to Xmn) can electrical couplings for all X electrodes To common conductor (X) 2106.T electrode (such as T11, T21 ..., Tm1) can connect by column in a series arrangement, and all T electricity (T11 to Tmn) can be electrically coupled to common conductor (T) 2108 for pole.When linking together as be shown in the examples, such as A column element of 2102-11,2102-21 to 2102-m1 constitute thread elements or column.In embodiment, each O electrode 2103 is to 11- 2103-mn can be electrically coupled to the transmission driving of corresponding circuit element in asic chip by one of conductor O11-Omn Device.In embodiment, array 2100 may be disposed in transceiver substrate, and be electrically coupled to asic chip by interconnection mechanism, Such as m × n+2 convex block.

In embodiment, (such as 2103-11 to 2103-m1) can be electrically coupled to common conductor to the O electrode in each column.In In this configuration, the O electrode in each column can receive identical electric pulse by public transmission driver during sending mode.It is similar Ground, respectively charge can be sent to common amplifier simultaneously during reception pattern by the O electrode in column.In other words, in each column Piezoelectric element is operated as line unit.In embodiment, each O electrode in column can be connected to dedicated transmission driver, wherein arranging In the input signals of transmission driver of all elements be identical, to produce currently all pressure during sending operation Substantially the same transmission on electric device drives output.Since each element has the transmission driver of oneself, this line element Part is based on an element and carries out electrical control.This has advantage in terms of driving bulky capacitor thread elements, wherein each element is with smaller Capacitor, and for column on element, sequential time delay can be minimized.It in embodiment, in a receive mode, can be by being connected LNA is connected to sense the charge of all elements in column, by such as in such a way that 2D is imaged.3D is imaged, is being received During mode operates, by the way that the O electrode of each element is connected to LNA to sense the charge of each element.

Figure 22 is the signal according to the m n array 2200 of the piezoelectric element 2202-11 to 2202-mn of the embodiment of the present disclosure Figure.As shown, array 2200 can be similar to array 2100, the difference is that (such as X12 to Xm2) can for the X electrode in column Be connected to common conductor (such as 2206-1), and arrange in T electrode (such as T12 to Tm2) can be connected to common conductor (such as 2208-1).In this way, the X electrode (or T electrode) in same row during operation can voltage potential having the same.In embodiment In, the transmission that each O electrode can be electrically coupled to corresponding circuit element in asic chip by one of conductor O11-Omn is driven Dynamic device.In embodiment, array 2200 may be disposed in transceiver substrate, and be electrically coupled to ASIC core by interconnection mechanism Piece, such as m × n+2n convex block.

Compared to array 2100, array 2200 can be used more convex blocks T and X electrode are connected to asic chip.One As for, when it is in parallel with ground or direct current biasing source and reduce crosstalk when, the connection number of T and X between asic chip and piezoelectric-array The increase of amount can reduce the impedance in X and T conductor.Crosstalk refers to that the signal from image-forming component to another image-forming component couples, And it can produce interference and reduce the quality of image.Any voltage drop caused by the electric current flowed in X and T line appears in ideal feelings When should not be exposed on the piezoelectric element of this voltage under condition, it is possible to create parasitic electrical couplings.In embodiment, work as piezoelectric element When not sending or receiving under electronic control, X, T and O electrode can partial short-circuits.In addition, free poles are grounded O electrode, make X Electrode is connected to other X electrodes in array, and T electrode is connected to other T electrodes in array.

Figure 23 is the signal according to the m n array 2300 of the piezoelectric element 2302-11 to 2302-mn of the embodiment of the present disclosure Figure.As shown, array 2300 can be similar to array 2100, the difference is that each piezoelectric element can be five terminal piezoelectricity members Part；Also that is, each piezoelectric element may include a hearth electrode (O) and four top electrodes (two X electrodes and two T electrodes).In reality It applies in example, two X electrodes of each piezoelectric element can connect by column in a series arrangement and the X electrode of all 2m × n can electrical couplings To common conductor (X) 2306.Similarly, two T electrodes of each piezoelectric element can connect by column in a series arrangement, and all 2m × The T electrode of n can be electrically coupled to common conductor (T) 2308.In embodiment, each O electrode can pass through one of conductor O11- Omn is electrically coupled to the transmission driver of corresponding circuit element in asic chip.In embodiment, array 2300 may be disposed at In transceiver substrate, and asic chip, such as m × n+2 convex block are electrically coupled to by interconnection mechanism.

Figure 24 is the signal according to the m n array 2400 of the piezoelectric element 2402-11 to 2402-mn of the embodiment of the present disclosure Figure.As shown, array 2400 can be similar to array 2200, the difference is that each piezoelectric element can be five terminal piezoelectricity members Part a: hearth electrode (O) and four top electrodes (two X electrodes and two T electrodes).In embodiment, the two of each piezoelectric element A X electrode can be electrically connected to conductor (such as 2406-1) in a column direction, and two T electrodes of each piezoelectric element can connect by column Common conductor (such as 2408-1) is electrically connected on the direction connect.In embodiment, each O electrode can pass through one of conductor O11-Omn is electrically coupled to the transmission driver of corresponding circuit element in asic chip.In embodiment, array 2400 can be set It is placed in transceiver substrate, and asic chip, such as m × n+2n convex block is electrically coupled to by interconnection mechanism.

Figure 25 is the signal according to the m n array 2500 of the piezoelectric element 2502-11 to 2502-mn of the embodiment of the present disclosure Figure.As shown, array 2500 can be similar to array 2100, because each piezoelectric element can have a hearth electrode (O) and two Top electrode (T), but the difference is that (such as the institute of the piezoelectric element of 2502-11 to 2502-m1) is there are two top electrode along a column (T) common conductor (such as 2508-1) can be electrically connected to.In embodiment, each O electrode can be by one of conductor O11 extremely Omn is electrically coupled to the transmission driver of corresponding circuit element in asic chip.In embodiment, array 2500 may be disposed at In transceiver substrate, and asic chip, such as m × n+n convex block are electrically coupled to by interconnection mechanism.

Figure 26 is the signal according to the m n array 2600 of the piezoelectric element 2602-11 to 2602-mn of the embodiment of the present disclosure Figure.As shown, array 2600 can have the electric connection similar with array 2100；Also that is, all X electrodes in piezoelectric element It can be electrically coupled to common conductor 2606, and all T electrodes in piezoelectric element can be electrically coupled to common conductor 2608.Array 2600 with array 2100 the difference is that, the top electrode (X, T) of a piezoelectric element (such as 2602-11) can have with separately The identical or different geometry of the top electrode (X, T) of one piezoelectric element (such as 2602-21).

For piezoelectric-array 2000 to 2500, the piezoelectric element in each piezoelectric-array can be same or different to each other.For example, one The view field of two top electrodes of a piezoelectric element 2202-11 can have two tops with another piezoelectric element 2202-n1 The identical or different shape of the view field of electrode.

Figure 27 is the signal according to the m n array 2700 of the piezoelectric element 2702-11 to 2702-mn of the embodiment of the present disclosure Figure.As shown, each piezoelectric element may include two signal electrodes (O) and a public electrode (X).In embodiment, each letter Number electrode (O) can be electrically coupled to the transmission driver of the corresponding circuit element of asic chip.For example, piezoelectric element 2702- 11 may include two signal conductors O111 and O112, two circuit elements that can be electrically coupled to respectively in asic chip, In each signal electrode charge can be generated during reception pattern.In embodiment, array 2700 may be disposed in transceiver substrate, And asic chip, such as 2m × n+1 convex block are electrically coupled to by interconnection mechanism.In embodiment, the institute in array 2700 There is T electrode that can be electrically coupled to ground or direct current biasing by common conductor (T) 2708.

In embodiment, the signal conductor (O) in the array in Figure 20 to 27 can be electrically coupled to circuit element, wherein electricity Circuit component may include the transistor switch similar to the switch 1816 in Figure 18 A；Also that is, switch can send and receive mould respectively Switch between transmission driver and amplifier during formula, so that O electrode can generate pressure wave during sending mode, and is receiving Charge is generated during mode.

Figure 28 is the exemplary embodiments according to the imaging system 2800 of the embodiment of the present disclosure.As shown, imaging system 2800 may include the array of piezoelectric element 2802-11 to 2802-mn, and for control/with the circuit elements of array communications.In reality It applies in example, each piezoelectric element 2802-11 to 2802-mn may include three electrodes: the first and second signals (O) electrode and T electrode. (for illustrative purposes, the first and second O electrodes in each piezoelectric element refer to the left and right O electricity of each piezoelectric element in Figure 28 Pole.) in embodiment, all T electrodes in array 2800 can be electrically coupled to ground or direct current biasing by conductor (T) 2808. In embodiment, the first O electrode of the piezoelectric element in column can be electrically coupled to common conductor (such as O11), and in same row The 2nd O electrode of piezoelectric element can be electrically coupled to another common conductor (such as O12).In embodiment, mould is being received During formula, each first and second signals O electrode can produce the charge that can be handled by related circuit.

In embodiment, first group of conductor O11, O21 ..., On1 can be electrically coupled to respectively amplifier 2810-1 extremely 2810-n, wherein the charge generated in the column of the first O electrode can be sent to corresponding amplifier by one of O conductor. In embodiment, second group of conductor O12, O22 ..., On2 can be electrically coupled to switch 2812 respectively to 1-2812-n.In In embodiment, each switch (such as 2812-1) can be connected to switching driver (such as 2816-1) during sending mode/processing, So that the 2nd O electrodes series (such as the 2801-11 to 2802-m1) into piezoelectric element can be transmitted in signal pulse.In embodiment, Each switch (such as 2812-1) can be connected to signal amplifier (such as 2814-1) during reception pattern/process, so that pressing Electric device (such as the charge that 2801-11 is generated in the 2nd O electrodes series into 2802-m1) can be transmitted to amplifier.Implementing In example, piezoelectric element 2802-11 to 2802-mn be may be disposed in transceiver substrate, and switch 2812-1 to 2812-n, transmission drive Dynamic device 2816-1 to 2816-n and amplifier 2810-1 to 2810-n and 2814-1 to 2814-n may be disposed in asic chip, Wherein transceiver substrate can be electrically coupled to asic chip by 2n+1 convex block.

In embodiment, the column of first electrode can be electrically coupled to common conductor (for example, O11), and the column of second electrode Another common conductor (for example, O12) can be electrically coupled to.In this way, in embodiment, imaging system 2800 can be used as line imaging Device operation；Also that is, each of each first group of conductor O11 to On2 can be used as transmission unit and/or reception during operation Unit operation.As described above, being generated in the column of the first O electrode for being connected to conductor (such as O11) during reception pattern Charge can be sent to amplifier (such as 2810-1), this amplifier can be low noise amplifier.Then, amplifier can amplify Charge signal and charge signal is converted into output voltage.Therefore, each column of the first O electrode, which can be used as, receives line imaging device to grasp Make.In embodiment, during reception pattern, the charge that is generated in the column for being connected to the 2nd O electrode of conductor (such as O12) It can be sent to signal amplifier (such as 2814-1), can be the low noise amplifier by switch (such as 2812-1). , amplifier can amplify charge signal and charge signal is converted to output voltage.Therefore, each column of the 2nd O electrode can be used as Line imaging device is received to operate.In embodiment, during sending mode, electric signal pulse can from send driver (such as The column that the 2nd O electrode of conductor (such as O12) is connected to by switch (such as 2812-1) 2816-1) are sent to, so that this group 2nd O electrode can produce pressure wave.Therefore, respectively arranging the 2nd O electrode can be used as transmission line unit to operate.

In embodiment, can be arranged during reception pattern for the switch 2812 of transistor switch in neutral position (also that is, it, which is not couple to, sends driver or amplifier).In the case, only second group of conductor O12, O22 ..., On2 It can be in being operated during reception pattern.

In embodiment, send driver (for example, 2816-1) can by conductor (O12) Xiang Yilie piezoelectric element (for example, 2802-11 to 2802-m1) sends signal, and simultaneously, amplifier (such as 2810-1) can from same row piezoelectric element (such as 2802-11 to 2802-m1) receives charge signal.In the case, a piezoelectric element (such as 2802-11) in column can pass through One conductor (such as O12) receives signal from driver (such as 2816-1) is sent, and passes through another conductor (such as O11) simultaneously Charge signal is sent to amplifier (such as 2810-1)；Also that is, imaging system 2800 can be performed while send and receive mode. It is very favorable for being operated in the doppler imaging of continuous mode while sending and receiving mode, wherein more compared to pulse Pu Le imaging, can be at image height blood flow velocity.

In embodiment, line unit (it refers to the O electrodes series for being electrically coupled to common conductor) can be used as transmission unit or Receiving unit or both.For example, electric signal can sequentially be sent to conductor O12, O22 ..., On2 so that thread elements is being sent out Send and sequentially generate pressure wave during mode, and can handle with combined reflected pressure wave, to generate target in a receive mode The bidimensional image of organ.In another example, electric drive signal during sending mode simultaneously be sent to conductor O12, O22 ..., On2, and the charge that generates from conductor O11, O12 to On1 can be used to handle the pressure wave of reflection simultaneously, with same When send and receive ultrasonic wave to generate bidimensional image.Conductor O12 to On2 can also be used in the case where operating reception pattern from piezoelectric wire Element receives charge.

Figure 29 is the exemplary embodiments according to the imaging system 2900 of the embodiment of the present disclosure.As shown, imaging system 2900 include array of piezoelectric elements 2902-11 to 2902-mn, and each piezoelectric element may include the first and second signals (O) electrode With T electrode.In embodiment, all T electrodes in array can be electrically coupled to a common conductor (T) 2908；First O electrode Each row can be electrically connected to one of conductor O1 to Om；And the 2nd O conductor it is each column can be by one of conductor O12 extremely On2 is electrically connected to switch 2912.In embodiment, each switch 2912-1 to 2912-n can be in transmission driver (such as 2916- 1) switch between amplifier (such as 2914-1), can be low noise amplifier.In embodiment, each conductor O1 to On can It is connected to one of amplifier 2910-1 to 2910-m, and it can be low noise amplifier.

In embodiment, during sending mode, signal can by conductor (such as O12) from send driver (such as The 2nd O electrodes series 2916-1) are sent to, so that piezoelectric element column can produce the pressure wave as line unit.In the sending mode phase Between, each switch (such as 2912-1) can switch to corresponding transmission driver (such as 2916-1).

In embodiment, imaging system 2900 can handle the pressure wave of reflection in two different ways.In the first side In method, amplifier 2910-1 to 2910-n can receive charge signal from the first O electrode；Also that is, each amplifier can be from the of a line One O electrode receives signal.The method allows biplane imaging/mode, wherein biplane image can provide just for bidimensional image Hand over perspective.In addition, the method can provide more than two-dimensional imaging capability.Biplane imaging is helpful to many applications, such as Biopsy.It may be noted that the mode of sending and receiving can be performed simultaneously in this method.In the second approach, it opens Closing 2912 can switch to amplifier 2914, so that a amplifier can receive and the charge of respective column of the processing from the 2nd O electrode Signal.

In embodiment, line unit refers to the column (or row) for being electrically coupled to the O electrode of O conductor, and it is single to can be used as transmission Member or receiving unit or both.In embodiment, even if conductor O1 to Om is configured on the direction orthogonal with conductor O12 to On2, Its direction can electrically program and can electrically adjust.For example, the gain of amplifier 2910 and 2914 can be adjusted electrically, wherein gain control Lead processed is realized in the amplifier.In embodiment, the length of each thread elements is (also that is, the number of the piezoelectric element in each thread elements Amount) it can also electrically adjust.In embodiment, all signal electrodes of a piezoelectric element can be by being connected in asic chip by this Respective nodes realize, and wherein connection between the signal electrode of the suitably programmed element being connected to each other of ASIC, send Driver or amplifier.

Figure 30 is the embodiment that the piezoelectric element 3000 of circuit element 3001 is coupled to according to the embodiment of the present disclosure.As schemed Show, piezoelectric element 3000 can include: the first sub- sub- piezoelectric element 3021-2 of piezoelectric element 3021-1 and second.Piezoelectric element 3000 Can include: hearth electrode (X) 3002 is shared by the first and second sub- piezoelectric elements, and is coupled to conductor (X) 3006.Implementing In example, the first sub- piezoelectric element 3021-1 may include signal (O) electrode 3003, be electrically coupled to amplifier by conductor 3008 3010.In embodiment, the second sub- piezoelectric element 3021-2 may include signal (O) electrode 3004, electrically through conductor 3012 It is coupled to switch 3014.

In embodiment, circuit element 3001 can be electrically coupled to piezoelectric element 3000, and including two amplifiers 3010 With 3016, such as low noise amplifier, and transmission driver 3018.In embodiment, switch 3014, which can have, passes through conductor 3012 are connected to one end of O electrode 3004, and can be in the amplifier 3016 for reception pattern and for the transmission of sending mode The other end switched between driver 3018.In embodiment, even if amplifier amplifies for symbolically representing electronic device Device 3016 may also connect to other electronic devices to be further amplified, filter sum digitization and receive signal.Send driver 3018 It can be multiple drive power device, and can produce the output with two or more signaling levels.Signaling can be monopole or bipolar 's.In embodiment, sending driver 3018 may include that input is mutually connected to the defeated of driver under the electronic control of driver Switch out, is not explicitly illustrated in Figure 30.

In embodiment, the signal for sending driver 3018 can be pulse width modulation (PWM), wherein by based on a Element controls pulse width, can generate weighting function on the ultrasonic signal of transmission.For example, its executable window function, wherein Signal is sent to be weighted by window function.In embodiment, weighting coefficient can be realized by changing the duty cycle of transmission signal, such as During PWM signaling.This operation allows to send apodization (apodization), wherein the secondary lobe of the signal emitted is by significantly Decaying, to allow higher-quality image.

In embodiment, transceiver array may be disposed in transceiver substrate and including n × n of piezoelectric element 3000 battle array Column, and n × n array circuit element 3001 may be disposed in asic chip, wherein each piezoelectric element 3000 can be electrically coupled to Corresponding one in n × n array of circuit element 3001.In the case, transceiver substrate can be by 3n2 bump interconnection extremely Asic chip.In embodiment, each column (or row) of array of piezoelectric elements can be operated with line unit, as combined the institute of Figure 28 and 29 It states.For example, same pulse can be applied to a column piezoelectric element simultaneously, so that piezoelectric element column can generate pressure wave simultaneously.It should infuse Meaning, each piezoelectric element 3000 of n × n array of piezoelectric element can an electricity corresponding with n × n array of circuit element Circuit component 3001 couples.

In embodiment, sub- piezoelectric element 3021-1 can be during whole operation in a receive mode, and sub- piezoelectric element 3021-2 can be at sending or receiving mode.In embodiment, it is operated while sending and receiving mode and allows continuous mode Doppler imaging.

It in embodiment, can be by using pulse width when transmission driver 3018 sends the signal to electrode 3004 Modulation (pulse width modulation, PWM) signaling, to change by the function of the sub- piezoelectric element 3021-2 pressure wave generated Rate is horizontal.For example, the signal power for being sent to human body may be very long when switching to doppler mode imaging from B-mode, and if Power level does not reduce, it may occur that tissue damage, this is critically important.In general, in conventional systems, it is different and quick Stabilized power supply be imaged for B-mode and various doppler modes, do not make to send driving voltage in both cases not with ㄕ Together, such as under doppler mode excessive power is not generated.It, in embodiment, can be by sending out different from traditional system Change power level using pwm signal when sending, without the use of the quick stabilized power supply of tradition.In embodiment, it is expected that it is how general Being switched fast between B-mode imaging is strangled, these modes are imaged together jointly.In embodiment, piezoelectric element Grounding electrode can also be separated from each other and be grounded respectively.In embodiment, this independent earthing mode can reduce noise and cause more The fast stabilization time.It in embodiment, under electronic control, can also be by reducing the function for sending the height arranged to reduce transmission Rate.This can promote again under Doppler and B-mode, using identical power supply, and meet the electric power under each mode and send demand. This can also realize common imaging.

Figure 31 is the circuit 3100 for being used to control multiple piezoelectric elements according to the embodiment of the present disclosure.In embodiment, circuit 3100 may be disposed in asic chip, and wherein the line (column or row) of piezoelectric element is set in transceiver substrate, and asic chip can Pass through bump interconnection to transceiver substrate.As shown, circuit 3100 may include matrix of circuit elements 3140-1 to 3140-n, In each circuit element can be with the O of corresponding piezoelectric element and X electrode signal of communication.

As shown in figure 31, each circuit element (for example, 3140-1) may include first switch (such as 3102-1), second switch (such as 3104-1), third switch (such as 3106-1) and send driver (such as 3108-1).From send driver (such as Output 3108-1) can be sent to the O electrode of piezoelectric element by conductor (such as 3110-1).During sending mode, each electricity Circuit component can be received by conductor 3122 and send driver (driving) signal 3124.Each second switch (such as 3104- can be connected 1), can be transistor switch and controlled by control unit 3150, with send signal 3124 to send driver (such as 3108-1).(electric connection between other components in control unit 3150 and circuit 3100 is not shown in Figure 31.) send Logic decoding, horizontal-shift, buffered incoming signals and by conductor (such as 3110- can be performed in driver (such as 3108-1) 1) conversion signal is sent to O electrode.In embodiment, during sending mode, first switch (such as 3102-1) can be closed.

In embodiment, control unit 3150 can determine need which piezoelectric element is connected during sending mode.If control The decision of unit 3150 is not turned on the second piezoelectric element, then can close first switch (such as 3102-2) and second switch (such as 3104-2), and third switch (such as 3106-2) can be connected so that O and X electrode current potential having the same are (also that is, on piezoelectric layer There are the drivings of net zero volt).In embodiment, third switch 3106 can be optionally.

In embodiment, during reception pattern, first switch (such as 3102-1) can be connected, so that producing in O electrode Raw charge can be sent to amplifier 3128 by conductor 3110-1 and 3120.Then, amplifier 3128 can receive charge signal (or equally, transducing signal) 3126 simultaneously amplifies sensor signal, wherein the signal of amplification can be further processed to generate image. During reception pattern, second switch (such as 3104-1) and third switch (such as 3106-1) can be closed, so that receiving signal It is not disturbed.

It should be noted that the entire array of circuit element 3140-1 to 3140-n can share a common amplifier 3128, from And simplify the design of circuit 3100.

In embodiment, the X electrode of piezoelectric element can be electrically coupled to ground or direct current by conductor 3112-1 to 3112-n Biasing, wherein conductor 3112-1 to 3112-n can be electrically coupled to common conductor 3152.

In embodiment, circuit 3100 can be coupled to the column piezoelectric element in Figure 20 (for example, 2002-11 to 2002- n1)。

In embodiment, the multiple circuits similar with circuit 3100 can be with the multiple row piezoelectric element coupling in the array in Figure 20 It closes, conductor 3152 can be coupled to common conductor (such as 2007 in Figure 20).In embodiment, circuit 3100 can control Figure 20- A column piezoelectric element in 27.

Figure 32 is the circuit 3200 for being used to control multiple piezoelectric elements according to the embodiment of the present disclosure.In embodiment, circuit 3200 may be disposed in asic chip, and wherein the line (column or row) of piezoelectric element is set in transceiver substrate, and asic chip Bump interconnection to transceiver substrate can be passed through.As shown, circuit 3200 may include the battle array of circuit element 3240-1 to 3240-n Column, wherein each circuit element can be with O, X and T electrode signal of communication of corresponding piezoelectric element.

As shown in Figure 32, each circuit element (for example, 3240-1) may include first switch (such as 3202-1), second open Close (such as 3204-1), third switch (such as 3206-1), the 4th switch (such as 3207-1) and send driver (such as 3208-1).Piezoelectric element can be sent to by conductor (such as 3210-1) from the output for sending driver (such as 3208-1) O electrode.During sending mode, each circuit element can be received by conductor 3222 sends driver (or driving) signal 3224.Each second switch (such as 3204-1) can be connected, can be transistor switch and controlled by control unit 3250, with hair The number of delivering letters 3224 to send driver (such as 3208-1).(between other components in control unit 3250 and circuit 3200 Electric connection is not shown in Figure 32.) send driver (such as 3208-1) signal can be carried out logic decoding, carry out it is horizontal partially Shifting and buffer output signal, and be sent to output signal is sent to O electrode by conductor (such as 3210-1).In embodiment In, during sending mode, first switch (such as 3202-1) can be closed.

In embodiment, control unit 3250 can determine need which piezoelectric element is connected during sending mode.If control The decision of unit 3250 is not turned on the second piezoelectric element, then can close first switch (such as 3202-2) and second switch (such as 3204-2), and third switch (such as 3206-2) and the 4th switch (such as 3207-2) can be connected so that O and X (and T) electrode Current potential (also that is, there are the drivings of net zero volt on piezoelectric layer) having the same.In embodiment, third and fourth switch (such as 3206-2 and 3207-2) can be it is optional.It should be understood that the transmission driving of three level signalings and execution is not explicitly shown Device.Similarly, the connection of the switch of X and T conductor and, for example, 3206-2,3207-2 is shown in a simplified manner.

In embodiment, during reception pattern, first switch (such as 3202-1) can be connected, so that producing in O electrode Raw charge can be sent to amplifier 3228 by conductor 3210-1 and 3220.Then, amplifier 3228 can amplify charge (or sense Survey device) signal 3226, wherein the signal of amplification can be further processed to generate image.During reception pattern, second can be closed (such as 3204-1), third switch (such as 3206-1) and the 4th switch (such as 3207-1) are switched, so that receiving signal will not It is interfered.

It should be noted that the entire array of circuit element 3240-1 to 3240-n can share a common amplifier 3228, from And simplify the design of circuit 3200.In embodiment, the X electrode of piezoelectric element can pass through conductor 3212-1 to 3212-n electrical property coupling It is bonded to ground or direct current biasing, wherein conductor 3212-1 to 3212-n can be electrically coupled to common conductor 3252.In embodiment, it presses The T electrode of electric device can be electrically coupled to ground or direct current biasing by conductor 3213-1 to 3213-n, and wherein conductor 3213-1 is extremely 3213-n can be electrically coupled to common conductor 3254.

In embodiment, circuit 3200 can be coupled to the column piezoelectric element in Figure 21 (for example, 2102-11 to 2102- n1).In embodiment, the multiple circuits similar with circuit 3200 can be coupled with the multiple row piezoelectric element in the array in Figure 21, Conductor 3252 can be coupled to common conductor (such as 2106 in Figure 21).Similarly, in embodiment, conductor 3254 can be coupled to Common conductor (for example, 2108 in Figure 21).In embodiment, circuit 3200 can control the column piezoelectric element in Figure 20-27.

In Figure 22-32, conductor is used to electrode being electrically coupled to another electrode.For example, electrode 2006-11 to 2006- M1 is electrically coupled to conductor 2007.In embodiment, the conductor in Figure 22-32 can be realized in various ways, such as on substrate Metal interconnecting layer is deposited and patterned, and piezoelectric element is set on different substrates, such as ASIC, is connect with substrate.

Figure 33 and 34 is according to the embodiment of the present disclosure for driving the illustrative waveform of piezoelectric element during sending mode 3300 and 3400.In general, piezoelectric material is damaged vulnerable to as caused by dielectric aging, and can be by using monopolar drive signals To postpone or avoid aging.Waveform 3300 and 3400 indicates the voltage potential between O and X electrode and/or between O and T electrode.Such as Shown in figure, waveform substantially can be it is unipolar, and can be two-stage stepping waveform 3300 (also that is, send driver, such as 2812,2912,3018,3108,3208 etc. be that unipolarity sends driver), or multistage (such as three-level) stepping waveform 3400.It is real Border voltage amplitude can generally change in 1.8V between 12.6V.In embodiment, multistep into waveform 3400 or has more steppings Waveform can reduce the heat in piezoelectric element, and have the advantages that use during specific imaging pattern, for example, Doppler or Harmonic imaging.

In embodiment, the pulse frequency in waveform 3300 and 3400 can change according to the property of desired signal, and need The frequency responded comprising the film under pMUT.In embodiment, waveform is also possible to complex signal, such as linearly or nonlinearly adjusts Frequency chirp signal, or other encoded signals using Golay code.

In embodiment, the circuit for driving piezoelectric element can be further designed such that the output from lower film is sent out It send and can be symmetrical shape.In embodiment, for each signal pulse in waveform 3300 (or 3400), the rising of pulse It edge substantially can be symmetrical with the drop edge of pulse relative to the center of pulse.This symmetry can reduce the harmonic wave for sending signal Content, especially second harmonic and other even harmonics signals.In embodiment, the signal pulse in waveform 3300 (or 3400) It can be pulse width modulation (PWM) signal.

Figure 35 is the transmission drive signal waveform according to the embodiment of the present disclosure.As shown, from the letter for sending driver Numbers 3500 can be it is symmetrical and bipolar；Also that is, the amplitude (H1) and width (W1) of peak value maximum voltage and the minimum electricity of peak value The amplitude (H2) and width (W2) of pressure are identical.Moreover, the slope of rising edge 3502 is identical as the slope of drop edge 3504.Separately Outside, rise time W3 is identical as fall time W4, and wherein fall time W4 refers between the starting point of decline and reference voltage Time interval.Furthermore rising edge 3506 has slope identical with rising edge 3502.

During sending operation, 3018 in driver, such as Figure 30 are sent, can be driven by electrical waveform, such as Figure 33-34 It is shown.Figure 36 shows the output signal of the various circuits in the image-forming assembly according to the embodiment of the present disclosure.In embodiment, wave Shape 3602 can be from sending the output signal of driver, such as 3018 and be sent to piezoelectric element, such as 3000.Implementing In example, since piezoelectric element can have intrinsic bandwidth, it can export sinusoidal output 3604 with its resonance frequency.If being connected to The output of the transmission driver of the O electrode of piezoelectric element rises very slow, then possibly can not be by electrode charge to desired End value, it is thus possible to precocity low-output signal, as shown in waveform 3606, wherein final amplitude is less than 3602.On the other hand, if The output signal for sending driver is rapidly stable, then there is the output signal for sending driver the bandwidth than piezoelectric element to limit Bigger bandwidth, therefore additional energy can dissipate in heat.Therefore, in embodiment, as shown in waveform 3608, piezoelectricity member Part can be charged with given pace, so that it can completely but slowly charge.In embodiment, waveform 3608, when indicating to be used as Between function top and hearth electrode on voltage potential, the output of proximity sensor in shape, and since shape difference is smaller, Input signal bandwidth and output signal bandwidth match obtain more preferably, and heat-energy losses are less.In embodiment, transmission driver can be optimized Driving impedance to reduce energy loss.In other words, the impedance for sending driver, relative to electricity enough within the object time Pressure stablizes required heat dissipation and time constant, is designed to most preferably drive piezoelectric element.

In embodiment, Harmonic imaging can be used in imager 120, and wherein harmonic imaging refers on the fundamental frequency of film It sends pressure wave and receives the pressure wave of reflection at second or more higher harmonic frequencies of film.In general, based on second or The back wave image of more higher harmonic frequencies has than the reflected image higher quality based on fundamental frequency.Send the symmetry in waveform It can inhibit second or more higher harmonic wave component of send wave, therefore, these components and second in back wave or higher humorous can be reduced The interference of wave, to improve the quality of image of Harmonic imaging.In embodiment, in order to reduce in send wave second or more Higher harmonics, waveform 3300 can have for 50% duty cycle.

In Figure 20-29, array may include multiple line units, wherein each line unit includes multiple pressures of electrical couplings each other Electric device.In embodiment, line unit can be used multiple pulses with phase difference (or equivalent delay) to drive.By adjusting phase Position, the pressure wave of synthesis can turn at an angle, referred to as Wave beam forming (beamforming).

Figure 37 A is the transmission pressure wave according to the embodiment of the present disclosure along the function of spatial position of the azimuth axis of sensor Amplitude curve figure.If the piezoelectric element in array is configured to two dimension, and the piezoelectric element on column connects and along X in the Y direction Direction is there are many column, then X-direction is known as azimuth direction, and Y-direction is known as elevation direction.As shown in Figure 37 A, pressure wave is sent Including main lobe and multiple secondary lobes.Main lobe can be used for scanning organizational goal and have high pressure amplitude.Secondary lobe have lower amplitude but The quality of image can be reduced, it is therefore desirable for reducing its amplitude.

Figure 37 B is various types of windows that apodization process is used for according to the embodiment of the present disclosure.In Figure 37 B, x-axis is indicated Position of the piezoelectric element relative to the piezoelectric element at the center active window (active window), y-axis expression amplitude (or apply Add to the weighting of piezoelectric element).As shown, not providing weighting, Yi Jidou for rectangular window 3720 for any transmission line It is uniform amplitude (also that is, symbolistic 1).On the other hand, if realize weighting function, as shown in Hamming window 3722, then in Line at the heart has bigger weighting than the line of edge.For example, in order to which Hamming window 3722 to be applied to the sensing in Fig. 3 B Device tile 210, the piezoelectric element in piezoelectric element (being expressed as-N in Figure 37 B) and right column in left column is (in Figure 37 B It is expressed as N) there can be lowest weighted, and the piezoelectric element in middle column can have highest weighting.This process is known as apodization.In In embodiment, can using various types of windows weight, even if shown in Hamming window 3722 be only an example.Implementing In example, apodization can be realized by various modes, for example, by using digital analog converter (digital to analog Converter, DAC), or by keeping identical driving horizontal but reducing the pixel quantity on a line, scaled for different lines The output driving for sending driver is horizontal.Net effect is by using apodization to reduce side lobe levels, wherein sending adding for driving Power is to be located at the position in the transmission aperture lived and shone based on certain line and change.

In embodiment, the reduction of the voltage of pulse or waveform can reduce the temperature at sensor surface.In addition, for giving Fixed maximum acceptable sensor surface temperature, the sensor operated at the lower voltage can provide better probe performance, To generate the better quality of image.For example, for the probe for reducing power consumption with 192 piezoelectric elements, it can be by only making With the probe (also that is, subclass of piezoelectric element) of a part, and in real time and has using multiplexer and sequentially scan remaining Element generates transmission pressure wave.Therefore, at any point in time, in conventional systems, only some sensor element is available Rise in limit temperature.In comparison, in embodiment, lower voltage probe can address more piezoelectric elements simultaneously, can increase Add the frame per second of image and the quality of image of enhancing.Also a large amount of power are consumed in RX path, wherein receiving letter using LNA to amplify Number.One class of imaging system uses multiple reception channels, and each receiver channels have amplifier.In embodiment, by using Temperature data can close multiple receiver channels to save power and reduce temperature.

In embodiment, change can be realized by changing the quantity of the piezoelectric element in each line unit according to window function Mark.In embodiment, such window approximate (window approximation) can be by electrically controlling the piezoelectric element on a line Quantity, or sensor array is connected come solidus by required number of elements and is realized.

In general, the heat that probe generates can be in transmission pulse/waveform, the function in pulse duration.Generally For, to make pressure wave penetrate target depths, piezoelectric element with better signal-to-noise ratio (signal to noise ratio, SNR) Need Long-pulse train.However, this reduces axial resolutions, and more heats are also generated in piezoelectric element.Therefore, it is passing In system system, the umber of pulse of transmission is seldom, there is one or two pulse sometimes.Since longer pulse can generate more heat Can, therefore be unpractical in conventional systems.In comparison, in embodiment, pulse and waveform 3300 and 3400 can have There is obvious and low peak value, makes it possible for Long-pulse train, chirp or other coding signalings.In embodiment, longer Spike train will not reduce axial resolution, because matched filtering can be performed in the receiver with compressed waveform, Lai Huifu resolution ratio. This technology has a better signal-to-noise ratio, and signal can penetrating body it is deeper, and the target of body deeper inside can be carried out high quality at Picture.

In embodiment, dimethyl silicone polymer (Polydimethylsiloxane, PDMS) layer or other impedance matchings Material can rotate on the sensor element in Fig. 4-19.This layer can improve the impedance matching between sensor element and human body, To reduce the reflection or loss of the pressure wave of the interface between sensor element and human body.

In Figure 20-29, more than one line unit can be created by connecting pixel on the direction y (or the direction x), In a line unit (or equivalent thread elements) refer to the multiple piezoelectric elements being electrically connected to each other.In embodiment, can also pass through Connect piezoelectric element in the x-direction to create one or more line units.In embodiment, the piezoelectric element in line unit can be Solidus connection.

In conjunction with as described in Figure 18 A, each piezoelectric element 1806 can be electrically coupled to circuit 1842, also that is, transceiver substrate The quantity of piezoelectric element in 1802 is identical as the quantity of circuit 1842 in asic chip 1804.In the case, each column (or Row) in the electric connection of piezoelectric element can electrically carry out；Also that is, being used to connect the solidus of the electrode in column (or row) Conductor (for example, 2007) can be replaced by electronic switch.In other words, the piezoelectric element in line imaging device/unit can each other electrically Connection.Control line imager electrical for one, can be by being connected to control circuit for each piezoelectric element of two-dimensional matrix array The corresponding control circuit (such as 1842) of two-dimensional array carrys out construction line imaging device/unit, and wherein control circuit is spatially near Pixel.In order to form thread elements, the multiple drivers for the column (or row) for controlling pixel that can electrically conduct.In embodiment, each line Number of drives in imager/unit can electrically correct under program and electrically adjustment, also that is, having piezoelectric element Line imaging device can be configured electrically.

In embodiment, the smaller capacitive of each pixel can be effectively driven by distributed driving circuit, and in driver There is no other same elements between pixel, the difficulty for driving big line capacitance can be eliminated.In embodiment, drive optimization can allow Rising edge and drop edge are symmetrical, and allowing send in output has preferably linearly, to realize harmonic imaging.(symmetry is to scheme 33 and 34 combination describes.) in embodiment, electronic control can have programmable aperture size, send apodization and water The control of flat or vertical duction, these can all improve the quality of image.It in embodiment, under program, can be under electronic control Configurable line imaging device/unit carry out electrical amendment.For example, if needing small number of connecting element in y-direction, it can Quantity is adjusted by software control, without rotating control electronic circuit or piezoelectric-array again.

In embodiment, each line unit may be designed as being made of multiple subelements, and each subelement can be controlled individually.This The difficulty that the advantages of a little unit is can reduce using single external transmission driver is line unit that bulky capacitor is driven to load Degree.For example, including the entire piezoelectric element in a column, then may be used if forming two line units in the position of a line unit Using two different transmission drivers (such as 2816), and each driver that sends can control the negative of entire line unit half It carries.In addition, even if using a driver, it is lower due to being connect with the resistance at line unit both ends, respectively drive the of line unit One half portion and the second half portion of line unit can improve driving situation.

In embodiment, length and the direction of line unit be can control.For example, line unit can be along x and the side y in Figure 20-29 To configuration.For example, in Figure 30, along column (for example, the O electrode of 2003-11 to 2003-n1) can electrical couplings to be formed One line unit, and the O electrode in other column can electrical couplings to form the n line unit extended in the x-direction.More specifically, The line unit extended in the x-direction include n O electrode (2003-12 to 2003-1n) ..., (2003-n2 to 2003-nn). It in embodiment, can be along orthogonal direction layout line unit by the circuit in control asic chip.

In Figure 20-30, each piezoelectric element may include two or more top (X and T) electrodes.In embodiment, this Piezoelectric layer under a little top electrodes can polarize in the same direction or in opposite directions.It is more when in conjunction with application signal electric field appropriate A polarization direction can improve sensor and send and receive sensitivity, and generate additional resonance to realize broader bandwidth.

In Figure 20-30, each array can have the one or more films being set to below piezoelectric element.In embodiment In, film can have a variety of vibration modes.In embodiment, a film can be vibrated with basic model with specific frequency, and another One film can be different frequency vibration, frequency is matches opposite with the electrode with different polarization directions by film design It sets and is determined.In embodiment, multiple films can be driven by identical electrode group, and each film can have different fundamental frequencies.In In embodiment, each film can respond large-scale frequency, can increase its bandwidth.In addition, the sensing with different polarization directions Device, which can increase, sends and receives sensitivity, while can also realize a high bandwidth sensor.

In Figure 22,24,25, X (or T) electrode in column can be electrically coupled to conductor.In embodiment, these conductors can It is electrically coupled to a common conductor.For example, in Figure 22, conductor 2008-1 to 2208-n can be electrically coupled to one and public lead Body line, so that all T electrodes in array 2200 can be connected to ground or public direct-current biasing.

In Figure 20-29, each array may include the piezoelectric element configured with two-dimensional array, wherein the parts number on the direction x Amount can be identical as the number of elements on the direction y.It will be apparent, however, to one skilled in the art that on the direction x Number of elements can be different from the number of elements on the direction y.

In embodiment, the asic chip (such as 1804) for being coupled to sensor base plate (such as 1802) may include temperature sense Device is surveyed, this temperature-sensitive sticker measures the surface temperature of the imaging device 120 towards human body during operation.In embodiment, may be used Maximum permissible temperature is adjusted, and since temperature is no more than the admissible upper limit, this adjusts the function that can limit imaging device.In In embodiment, this temperature information can be used for improving the quality of image.For example, can amplify if temperature is lower than maximum allowable limitation Additional power is consumed in device, to reduce its noise and improve system signal noise ratio (SNR) to improve image quality.

In embodiment, the power that imaging device 120 consumes increases with the increase of the line element number of driving simultaneously.It needs Institute's wired element in driving imaging device 120 is to complete to send pressure wave from entire aperture.If several line units is only driven It pressure wave is sent, and once waits and receives reflection echo, then need the more time to complete a cycle and drive entire aperture Entire line unit, the rate (frame per second) of filmed image per second can be reduced.In order to improve this rate, need to once drive more Line unit.In embodiment, temperature information allows imaging device 120 to drive more lines to improve frame per second.

In Figure 20-30, each piezoelectric element can have a hearth electrode (O) and one or more top electrodes (X and T), and With more than one resonance frequency.For example, each piezoelectric element 2502 in Figure 25 can have a hearth electrode (O) and two tops Electrode, wherein the first top electrode and hearth electrode (O) can be in response to first frequency f1, and the second top electrode and hearth electrode (O) can In response to the second frequency f2 different from f1.

In embodiment, the charge generated during reception pattern is transferred to amplifier, for example, 1811,2810,2814, 2910,2914,3010,3016,3128 and 3228.Then, the signal of amplification can be further processed by various electronic components.Cause This, it will be apparent to those skilled in the art that each amplifier 1811,2810,2814,2910,2914, 3010,3016,3128 and 3228 refer to one or more electronic component/circuits for handling charge signals jointly；Also that is, each amplification Device symbolically indicates one or more electrical components/circuits for handling charge signal.

Figure 38 is the schematic diagram according to the image-forming assembly 3800 of the embodiment of the present disclosure.As shown, image-forming assembly 3800 can It include: the transceiver substrate 3801 (being not shown in Figure 38) with piezoelectric element；It is electrically coupled to transceiver substrate 3801 Asic chip 3802；It is electrically coupled to the reception multiplexer 3820 of asic chip 3802；It receives AFE(analog front end) (AFE) 3830；It is electrically coupled to the transmission multiplexer 3824 of asic chip 3802；It is electrically coupled to the second multiplexer 3824 Transmission Beam-former 3834.In embodiment, asic chip 3802 may include multiple circuits 3804, is connected to and configures At multiple piezoelectric elements in driving transceiver substrate 3801.In embodiment, each circuit 3804 may include reception amplifier (or Abbreviation amplifier) 3806, for example, LNA, the transmission driver 3808 for sending the signal to piezoelectric element, and amplifying The switch 3810 switched between device 3806 and transmission driver 3808.Amplifier can have programmable-gain, and can connect The piezoelectric element that need to be extremely sensed.Sending driver has the device for optimizing its impedance, and represents and be connected to the piezoelectricity to be driven Element.

In embodiment, receiving multiplexer 3820 may include multiple switch 3822, and receiver AFE3830 may include Multiple amplifiers 3832.In embodiment, circuit 3804 can be electrically connected to amplifier 3832, or and amplifier by each switch 3822 3832 disconnect.In embodiment, sending multiplexer 3824 may include multiple switch 3826, and send Beam-former 3834 It may include being not shown for the relative delay between the transmission driver waveform of multiple transmission drivers 3836, the various drivers of control Other circuits, and control it is each send driver frequency and umber of pulse unshowned other circuits.In embodiment, When the disconnection of switch 3822 and when switch 3810 is connected to and sends driver 3808, each switch 3826 is connected during sending operation And it is connected to circuit 3804.Similarly, during receiving operation, switch 3826 is closed when switch 3822 is connected, and is switched 3810 are connected to amplifier 3806.

In embodiment, switch 3810 can switch to during sending mode sends driver 3808 and in the reception pattern phase Between switch to amplifier 3806.In embodiment, the switch 3822 of a part can be closed, so that corresponding circuit 3804 can be set It is set to reception pattern.Similarly, the switch 3826 of a part can be closed, so that corresponding circuit 3804 can be arranged to send mould Formula.Since the switch 3822 of a part and the switch 3826 of a part can simultaneously close off, imager assembly can exist simultaneously It sends and receives and is operated under mode.Moreover, receiving multiplexer 3820 and transmission multiplexer 3824 reduces ASIC and connects The quantity of foot.In embodiment, multiplexer 3820, receiver AFE3830 are received, multiplexer 3824 is sent, sends Beam-former 3834 may include in the circuit 215 in Fig. 2.

In embodiment, each piezoelectrics can have more than two electrodes, one of electrode can be at sending mode with Pressure wave is generated, and another electrode can be simultaneously in a receive mode to generate charge.Operation while sending and receiving mode Allow three-dimensional imaging.

Though the present invention is easy to carry out various modifications and alternative forms, specific example has been shown in the accompanying drawings simultaneously herein Detailed description.However, it should be understood that being fallen into the present invention is not limited to particular forms disclosed on the contrary, the present invention will cover All modifications, equivalents, and substitutions object in attached claim scope.

Claims (according to the 19th article of modification of treaty)

1. a kind of sensor characterized by comprising

The two-dimensional array of piezoelectric element, each piezoelectric element include at least one sub- piezoelectric element and include:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；And

First top electrode is set to the top side of the piezoelectric layer；And

First top electrode of first conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to First conductor.

2. sensor according to claim 1, it is characterised in that: the piezoelectric element has the more of display broadband response A vibration mode.

3. sensor according to claim 2, it is characterised in that: the piezoelectric element in the column of the two-dimensional array Each hearth electrode is connected to conductor, and the conductor is additionally attached to together in first row.

4. sensor according to claim 3, it is characterised in that: the piezoelectric element is multiple row, all piezoelectricity in column The hearth electrode of element is connected to conductor, and being connected to the conductor of the hearth electrode of different lines is separated, and all column The top electrode of all piezoelectric elements links together.

5. sensor according to claim 1, it is characterised in that: each piezoelectric element include the first sub- piezoelectric element and Second sub- piezoelectric element, and each first sub- piezoelectric element and the second sub- piezoelectric element include top electrode and hearth electrode； The hearth electrode of the first sub- piezoelectric element is electrically coupled to the hearth electrode of the described second sub- piezoelectric element；Conductor connects The top electrode of all first sub- piezoelectric elements in column is connect, and the described second sub- piezoelectricity in another conductor connection same row is first All top electrodes of part；The conductor of connection hearth electrode is connected to all piezoelectric elements in array.

6. sensor according to claim 1, it is characterised in that: each piezoelectric element include the first sub- piezoelectric element and Second sub- piezoelectric element, and each first sub- piezoelectric element and the second sub- piezoelectric element include top electrode and hearth electrode； The hearth electrode of the first sub- piezoelectric element is electrically coupled to the hearth electrode of the described second sub- piezoelectric element；Described The top electrode of one sub- piezoelectric element is electrically coupled to the top electrode of the described second sub- piezoelectric element.

7. sensor according to claim 6, it is characterised in that: each first sub- piezoelectric element and the second son pressure Electric device further includes additional top electrode, and the additional top electrode of the first sub- piezoelectric element is electrically coupled to described second The additional top electrode of sub- piezoelectric element.

8. sensor according to claim 1, which is characterized in that further include:

Second conductor, the first top electrode electrical couplings on a part of piezoelectric element in the secondary series of the two-dimensional array To second conductor；And

First conductor is electrically coupled to second conductor.

9. sensor according to claim 1, it is characterised in that: each piezoelectric element of the two-dimensional array further includes setting The second top electrode on the top surface of the piezoelectric layer, further includes:

Second top electrode of second conductor, one group of piezoelectric element in the first row of the two-dimensional array is electrically coupled to institute State the second conductor.

10. sensor according to claim 9, it is characterised in that: each first top electrode and second top electrode It is with annular shape, and second top electrode surrounds first top electrode.

11. sensor according to claim 9, which is characterized in that further include:

Second top electrode of third conductor, a part of piezoelectric element in the secondary series of the two-dimensional array is electrically coupled to The third conductor；And

The third conductor is electrically coupled to second conductor of the first row, wherein described the of first row and secondary series One conductor also electrical couplings.

12. sensor according to claim 9, it is characterised in that: the piezoelectric layer below first top electrode First part polarizes along first direction, and the second part edge of the piezoelectric layer below second top electrode and first direction Opposite second direction polarization.

13. sensor according to claim 1, it is characterised in that: each piezoelectricity member of the two-dimensional array of piezoelectric element Part further includes the second top electrode being set on the top surface of the piezoelectric layer, a part in the column of the two-dimensional array First top electrode and second top electrode of piezoelectric element are electrically coupled to first conductor, and hearth electrode is connected to The independent conductor of each piezoelectric element in array.

14. sensor according to claim 13, it is characterised in that: pressed with the son being made of the second top electrode and hearth electrode Electric device is compared, and has different frequency characteristics by the first sub- piezoelectric element that the first top electrode and hearth electrode form, so that multiple Seaming element has broader bandwidth.

15. sensor according to claim 14, it is characterised in that: all piezoelectric elements in column have and the column All top electrodes of the hearth electrode that common conductor links together, all piezoelectric elements are linked together by using common conductor And it is connected to DC voltage.

16. sensor according to claim 14, it is characterised in that: all piezoelectric elements in the column, which have, to be connected to The hearth electrode of conductor, and be additionally coupled to send driver during sending operation；Hearth electrode is connected in operation reception pattern Reception amplifier.

17. sensor according to claim 15, it is characterised in that: the hearth electrode is connected to hair during sending operation Driver is sent, and is connected to reception amplifier during receiving operation.

18. sensor according to claim 1, it is characterised in that: each piezoelectricity member of the two-dimensional array of piezoelectric element Part further includes the second top electrode, third top electrode and the 4th top electrode being set on the top surface of the piezoelectric layer；Institute Second top electrode for stating one group of piezoelectric element in the first row of two-dimensional array is electrically coupled to described first Conductor, further includes:

Second conductor, the third top electrode and the described 4th of a part of piezoelectric element in the first row of the two-dimensional array Top electrode is electrically coupled to second conductor.

19. sensor according to claim 18, which is characterized in that further include:

Third conductor, first top electrode and described second of a part of piezoelectric element in the secondary series of the two-dimensional array Top electrode is electrically coupled to the third conductor；And

4th conductor, the third top electrode and the described 4th of a part of piezoelectric element in the secondary series of the two-dimensional array Top electrode is electrically coupled to the 4th conductor；

Wherein, first conductor is electrically coupled to the third conductor, and second conductor is electrically coupled to the described 4th Conductor.

20. sensor according to claim 1, it is characterised in that: each piezoelectric element includes the first sub- piezoelectric element And the second sub- piezoelectric element, and each first sub- piezoelectric element and the second sub- piezoelectric element include top electrode and bottom electricity Pole；The hearth electrode of the first sub- piezoelectric element is electrically coupled to the hearth electrode of the described second sub- piezoelectric element；One The top electrode of all first piezoelectric elements in conductor connection column, and another conductor connects the described second sub- piezoelectricity in one row All top electrodes of element；The conductor of connection hearth electrode is connected to all piezoelectric elements in array.

21. sensor according to claim 5, it is characterised in that: be connected to by each column that the first sub- piezoelectric element forms Receiver, and another blocked operation under the mode of sending or receiving is listed in by what the second sub- piezoelectric element formed.

22. sensor according to claim 20, it is characterised in that: be connected to by each row that the first sub- piezoelectric element forms Receiver, and worked alternatively by another be listed under the mode of sending or receiving that the second sub- piezoelectric element forms.

23. sensor according to claim 1, which is characterized in that further include:

Specific integrated circuit (application-specific integrated circuit, ASIC) chip, including send and drive The array of dynamic circuit, each transmitter driving circuit are electrically coupled to the correspondence piezoelectric element of the two-dimensional array of piezoelectric element The hearth electrode,

Wherein, the pressure in the quantity of the transmitter driving circuit in the asic chip and the two-dimensional array of piezoelectric element The quantity of electric device is identical.

24. sensor according to claim 23, which is characterized in that further include:

It is provided with the substrate of the two-dimensional array of the piezoelectric element,

Wherein, first conductor is the metal conductor layer being deposited at least one of the substrate and asic chip.

25. sensor according to claim 23, which is characterized in that further include:

It one layer, is set on the asic chip and configures to absorb a part of pressure wave sent by the piezoelectric element.

26. sensor according to claim 23, it is characterised in that: each transmitter driving circuit configuration is to send monopole At least one of signal, multilevel signal and chirp signal.

27. sensor according to claim 23, it is characterised in that: the asic chip, which executes to send to piezoelectric element, to be believed Number, signal is received from piezoelectric element, amplifies from piezoelectric element received signal, polarizes to piezoelectric element, and and external electrical At least one of operation of subsystem communication.

28. sensor according to claim 23, it is characterised in that: the asic chip is convex by one or more interconnection The two-dimensional array of block and piezoelectric element integrates.

29. sensor according to claim 23, it is characterised in that: the asic chip includes with charge sensing modes work The low noise amplifier (low noise amplifier, LNA) of work.

30. sensor according to claim 29, it is characterised in that: the LNA has programmable-gain.

31. sensor according to claim 30, it is characterised in that: the gain can configure in real time, to provide time increasing Benefit compensation.

32. sensor according to claim 23, it is characterised in that: the asic chip utilizes serial peripheral interface (serial-peripheral-interface, SPI) mode is communicated.

33. sensor according to claim 31, it is characterised in that: the asic chip includes at least one transmission signal Line and at least one reception signal wire, and at least one transmission signal wire and at least one reception signal wire are led one Multiplexing on line, to be communicated with external electronic.

34. sensor according to claim 31, which is characterized in that further include:

At least one temperature-sensitive sticker, for measuring the temperature of imaging device.

35. sensor according to claim 25, it is characterised in that: the asic chip includes low-noise amplifier (low-noise-amplifier, LNA) and temperature data is received from least one temperature-sensitive sticker, and uses the temperature number Adjustment sends and receives operation to reduce temperature accordingly.

36. sensor according to claim 32, it is characterised in that: multiple show sent in a frame is reduced.

37. sensor according to claim 35, it is characterised in that: each channel includes LNA and other reception circuits Multiple reception channels reduce temperature by reducing power.

38. sensor according to claim 26, it is characterised in that: frame per second is reduced to lower temperature.

39. sensor according to claim 23, it is characterised in that: one of described transmitter driving circuit is monopole 's.

40. sensor according to claim 23, it is characterised in that: one of described transmitter driving circuit configuration with Generate the signal with equal conducting and turn-off time and symmetrical rising and falling time.

41. sensor according to claim 23, it is characterised in that: each impedance for sending driver is programmable , and it is designed to maximize the acoustical power from sensor without overheating.

42. sensor according to claim 1, it is characterised in that: the shape of one of them of the piezoelectric element and institute The shape for stating the another one of piezoelectric element is different.

43. sensor according to claim 1, it is characterised in that: the size of one of them of the piezoelectric element is different In the size of the another one of the piezoelectric element.

44. sensor according to claim 1, it is characterised in that: each piezoelectric element is vibrated with transverse mode Piezoelectricity micromachined ultrasonic sensor (Piezoelectric Micromachined Ultrasonic Transducer, pMUT)。

45. sensor according to claim 1, which is characterized in that further include:

It one layer, is set on the piezoelectric-array, towards target to be imaged, and configures to reduce the piezoelectric element and to be imaged Impedance mismatch between target.

46. sensor according to claim 45, it is characterised in that: described one layer by room temperature vulcanization (room- Temperature-vulcanizing, RTV) material formed.

47. sensor according to claim 45, it is characterised in that: one layer of the thickness is produced by the piezoelectric element Four/wavelength of raw pressure wave.

48. sensor according to claim 1, it is characterised in that: first conductor is electrically coupled to during operation DC bias voltage.

49. sensor according to claim 1, it is characterised in that: the hearth electrode is signal conductor and is connected to transmission One of circuit and reception circuit, and the top electrode is connected to the DC bias source including ground connection.

50. sensor according to claim 29, it is characterised in that: each transmitting line and the reception circuit are collection At circuit.

51. a kind of imaging device characterized by comprising

The two-dimensional array of piezoelectric element, each piezoelectric element of the two-dimensional array of piezoelectric element include at least one sub- piezoelectricity member Part, and include:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；And

First top electrode and the second top electrode, are set to the top side of the piezoelectric layer；And

First top electrode of first conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to First conductor；

First circuit is electrically coupled to first conductor and configuration to handle through the first conductor received signal；

Second top electrode of second conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to Second conductor；

Switch, has first terminal and Second terminal, and the first terminal is electrically coupled to second conductor；

Second circuit, for handling signal；

Driver is sent, for sending a signal to second conductor；And the Second terminal of the switch is selectively It is coupled to the second circuit and one sent in driver.

52. imaging device according to claim 51, it is characterised in that: each first circuit and the second circuit packet Include low noise amplifier.

53. a kind of imaging device characterized by comprising

The two-dimensional array of piezoelectric element, each piezoelectric element of the two-dimensional array of piezoelectric element include at least one sub- piezoelectricity member Part, and include:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；And

First top electrode and the second top electrode, are set to the top side of the piezoelectric layer；And

First top electrode of first conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to First conductor；

First circuit is electrically coupled to first conductor and configuration to handle through the received signal of first conductor；

Second top electrode of second conductor, a part of piezoelectric element in the first row of the two-dimensional array is electrically coupled to Second conductor；

Switch, has first terminal and Second terminal, and the first terminal is electrically coupled to second conductor；

Second circuit, for handling signal；

Driver is sent, for sending a signal to second conductor；And

The Second terminal of the switch is selectively coupled to one of the second circuit and the transmission driver.

54. imaging device according to claim 53, it is characterised in that: each first circuit and the second circuit packet Include low noise amplifier.

55. a kind of imaging device characterized by comprising

First substrate includes:

Each piezoelectric element of the two-dimensional array of piezoelectric element, the two-dimensional array of piezoelectric element includes:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；

First top electrode and the second top electrode, are set to the top side of the piezoelectric layer；And

First conductor and the second conductor are electrically coupled to first top electrode and second top electrode respectively；And

The second substrate includes:

Each circuit unit of the two-dimensional array of circuit unit, the two-dimensional array of circuit element includes:

First circuit, is electrically coupled to first conductor of piezoelectric element and configuration is received with handling by first conductor Signal；

Switch, has first terminal and Second terminal, and what the first terminal was electrically coupled to a piezoelectric element described second leads Body；

Second circuit, for handling signal；

Driver is sent, for sending a signal to second conductor；And

The Second terminal of the switch is selectively coupled to one of the second circuit and the transmission driver.

56. a kind of for controlling the circuit of multiple piezoelectric elements characterized by comprising

First conductor, for sending driving signal to passing through one or more of piezoelectric elements；And

Second conductor, for sending transducing signal to passing through one or more of piezoelectric elements；

Each circuit unit of multiple circuit elements includes:

First switch has first terminal, is electrically coupled to the first electrode of second conductor and piezoelectric element；

Second switch, has first terminal and Second terminal, and the first terminal of the second switch is electrically coupled to described First conductor；

Driver is sent, the Second terminal of second switch is electrically coupled to, and is passing through the second switch When the Second terminal receives the driving signal, configure to send a signal to the first electrode of piezoelectric element；And

Third switch, has first terminal and Second terminal, and the first terminal of the third switch is electrically coupled to described The Second terminal of the Second terminal of second switch, the third switch is electrically connected to the electrode of piezoelectric element.

57. sensor according to claim 56, it is characterised in that: during the operation of multiple piezoelectric elements, described Two conductors are electrically coupled to DC bias voltage.

58. the method as described in claim 56, which is characterized in that further include:

Third conductor,

Wherein, each circuit element of multiple circuit elements further includes the 4th switch with first terminal and Second terminal, described The first terminal of 4th switch is electrically coupled to the third conductor, the Second terminal electrical property coupling of the 4th switch It is bonded to the third electrode of piezoelectric element.

59. sensor according to claim 58, it is characterised in that: during the operation of multiple piezoelectric elements, described Three conductors are electrically coupled to DC bias voltage.

60. the method as described in claim 56, which is characterized in that further include:

Second circuit is electrically coupled to second conductor and configuration to handle through the second conductor received signal；

61. a kind of method for polarized piezoelectric element, the piezoelectric element are electrically coupled to specific integrated circuit (application-specific integrated circuit, ASIC) chip, and including hearth electrode, be set to the bottom Piezoelectric layer on electrode and the first top electrode and the second top electrode being set on the piezoelectric layer, which comprises electrically The hearth electrode is connected to ground；

Apply positive electricity and is depressed into first top electrode；

Apply negative electricity and is depressed into second top electrode；And

The piezoelectric element is set to be subjected to prolonged temperature, so that first of the piezoelectric layer below first top electrode Divide and polarize along first direction, and the second part of the piezoelectric layer below second top electrode is along opposite with first direction Second direction polarization.

62. a kind of imaging device characterized by comprising

The two-dimensional array of piezoelectric element, each piezoelectric element include at least one sub- piezoelectric element and include:

Piezoelectric layer；

Hearth electrode is set to the bottom side of the piezoelectric layer；And

First top electrode is set to the top side of the piezoelectric layer；And

Specific integrated circuit (application-specific integrated circuit, ASIC) chip, including for driving The array of the circuit of the two-dimensional array of dynamic pressure electric device, each circuit are electrically coupled to corresponding piezoelectric element；

Wherein, the first row or line of the imaging device of a part of piezoelectric element in first row including the two-dimensional array are by leading A part of circuit synchronization of the part of the piezoelectric element in the first row of the logical control two-dimensional array is formed.

63. imaging device according to claim 62, it is characterised in that: multiple transmissions in the asic chip are driven Dynamic circuit and multiple piezoelectric elements in the two-dimensional array of piezoelectric element are identical or less.

64. imaging device according to claim 62, it is characterised in that: one in the secondary series including the two-dimensional array Second line of part piezoelectric element is controlled the part of the piezoelectric element in the secondary series of the two-dimensional array by conducting A part of circuit formed, multiple piezoelectricity in multiple piezoelectric elements in the First Line and second line Element is different.

65. imaging device according to claim 62, it is characterised in that: the first row or line of the imager couple To driver is sent, the transmission driver applies electric signal to the First Line, so that the piezoelectricity in the First Line Element emits pressure wave.

66. imaging device according to claim 62, it is characterised in that: the first row or line of the imager couple To reception amplifier, the reception amplifier receives the electric signal from the First Line and handles the electric signal.

67. imaging device according to claim 62, it is characterised in that: each circuit includes reception amplifier, is also wrapped It includes:

Multiplexer is electrically coupled to the reception amplifier of the circuit during reception pattern, and configures with multichannel Transmit the signal from the reception amplifier.

68. the imaging device as described in claim 67, which is characterized in that further include:

It receives AFE(analog front end) (receiver analogue-front-end, AFE), is electrically coupled to the multiplexer.

69. imaging device according to claim 62, it is characterised in that: each circuit includes sending driver, is also wrapped It includes:

Multiplexer is coupled to the transmission driver of the circuit during sending mode, and configures with multiplexing It is sent to the signal for sending driver.

70. the imaging device as described in claim 69, which is characterized in that further include:

Beam-former is sent, multiplexer is electrically coupled to.

71. imaging device according to claim 69, it is characterised in that: the impedance for sending driver is programmable , and it is designed to maximize the acoustical power from sensor without overheating.

72. imaging device according to claim 62, it is characterised in that: during the period 1, the institute of the imager Have it is described column driven by transmission driver, wherein it is described send driver include under electronic control by switch connection one or Multiple circuits on multiple integrated circuits；During second round, each column of the imager are connected to reception amplifier, wherein The amplifier includes under program by multiple circuits of switch connection.

73. imaging device according to claim 62, it is characterised in that: the part for sending driver is being based on FPGA Transmission Beam-former in realize.

74. imaging device according to claim 62, it is characterised in that: the part of reception amplifier is in AFE(analog front end) reality It is existing, including time gain amplifier, low-pass filter, simulation numerical digit sensor, numerical digit withdrawal device and the generation number for being connected to FPGA Position output.

75. sensor according to claim 1, it is characterised in that: the piezoelectric element configuration is to send and receive at least One ultrasonic waveform, the ultrasonic waveform have the bandwidth of multiple vibration frequencies including each piezoelectric element；From piezoelectricity member The pressure waveform that part is sent carrys out reality by the top electrode and the hearth electrode, by the voltage pulse of application appropriate time section It is existing.

76. sensor according to claim 2, it is characterised in that: the piezoelectric element configuration is to send and receive at least One ultrasonic waveform, the ultrasonic waveform have the bandwidth of multiple vibration frequencies including each piezoelectric element；From piezoelectricity member The pressure waveform that part is sent carrys out reality by the top electrode and the hearth electrode, by the voltage pulse of application appropriate time section It is existing.

77. the sensor according to claim 76, it is characterised in that: the sensor only has sending function.

78. the sensor according to claim 76, it is characterised in that: the positive amplitude of maximum of AC drive voltage is positive 5V, Maximum negative voltage is negative 5V, and two voltages are nominal value, and tolerance is within 5%.

79. the sensor according to claim 76, it is characterised in that: for additional column, send driving amplitude with described attached Add column and changes.