阅读说明：本技术 借助激光诱导的深度蚀刻来加工、尤其分割基板的方法 (method for processing, in particular for dividing, a substrate by means of laser-induced deep etching ) 是由 R.奥斯索尔特 N.安布罗修斯 D.邓克尔 A.施努尔 于 2018-04-06 设计创作，主要内容包括：本发明涉及一种借助激光诱导的深度蚀刻来加工基板的方法,其中,激光束沿加工线运动,并且将各个脉冲以空间上的激光脉冲间距(d)引导到基板上。接下来通过蚀刻以蚀刻速率(R)和蚀刻时长(t)在1>d/(R*t)>10<Sup>-5</Sup>的条件下实施各向异性的材料剥除。(The invention relates to a method for processing a substrate by means of laser-induced deep etching, wherein a laser beam is moved along a processing line and individual pulses are directed onto the substrate with a spatial laser pulse spacing (d). An anisotropic material stripping is then carried out by etching at an etching rate (R) and an etching duration (t) under conditions of 1> d/(R x t) > 10-5.)

1. Method for processing, in particular for dividing, in particular flat substrates by means of laser-induced deep etching, in which a laser beam is moved along a processing line and pulses are directed onto the substrate with a spatial laser pulse spacing (d), and subsequently an anisotropic material stripping is carried out by etching at an etching rate (R) and an etching duration (t), characterized in that the processing parameters are adjusted according to the following conditions:

1>d/(R*t)>10。

2. a method according to claim 1, characterized in that the adjustment of the processing parameters is performed on the basis of the following conditions:

1>d/(R*t)>10。

3. Method according to claim 1 or 2, characterized in that the aspect ratio of the thickness (D) of the substrate to the width (b) of the cutting gap transverse to the processing line is adjusted according to the following conditions:

12>D/b>1。

4. Method according to at least one of the preceding claims, characterized in that the ratio of the original thickness (D) of the substrate to the product of the etching rate (R) and the etching duration (t) is greater than 3:

D/(R*t)>3。

5. Method according to at least one of the preceding claims, characterized in that the ratio of the original thickness (D) of the substrate to the product of the etching rate (R) and the etching duration (t) is greater than 5:

D/(R*t)>5。

6. method according to at least one of the preceding claims, characterized in that the ratio of the original thickness (D) of the substrate to the product of the etching rate (R) and the etching duration (t) is greater than 8:

D/(R*t)>8。

7. method according to at least one of the preceding claims, characterized in that the ratio of the original thickness (D) of the substrate to the product of the etching rate (R) and the etching duration (t) is greater than 10:

D/(R*t)>10。

8. Method according to at least one of the preceding claims, characterized in that the ratio of the original thickness (D) of the substrate to the product of the etching rate (R) and the etching duration (t) is greater than 12:

D/(R*t)>12。

9. Method according to at least one of the preceding claims, characterized in that the substrate consists of glass, in particular quartz glass.