阅读说明：本技术 发光二极管装置 (Light emitting diode device ) 是由 谢昆达 罗锦宏 吴厚润 于 2019-11-20 设计创作，主要内容包括：一种发光二极管装置包含第一半导体层、主动层、第二半导体层以及第一接触电极层。第一半导体层具有第一部分与第二部分,主动层覆盖第一半导体层的第一部分且不覆盖第二部分,第二半导体层设置于主动层上。第一接触电极层电性连接第一半导体层,并包含多个导电部。导电部位于第一半导体层远离主动层的一侧,并包含至少一外围导电部,外围导电部设置于第一半导体层的第二部分之下。上述结构配置有利于维持发光二极管装置的可靠度,并同时提升其亮度。(A light emitting diode device includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first contact electrode layer. The first semiconductor layer has a first portion and a second portion, the active layer covers the first portion of the first semiconductor layer and does not cover the second portion, and the second semiconductor layer is disposed on the active layer. The first contact electrode layer is electrically connected with the first semiconductor layer and comprises a plurality of conductive parts. The conductive part is positioned on one side of the first semiconductor layer far away from the active layer and comprises at least one peripheral conductive part, and the peripheral conductive part is arranged below the second part of the first semiconductor layer. The above structure configuration is beneficial to maintaining the reliability of the light emitting diode device and simultaneously improving the brightness of the light emitting diode device.)

1. A light emitting diode device, comprising:

a first semiconductor layer having a first portion and a second portion;

an active layer covering the first portion and not covering the second portion of the first semiconductor layer;

a second semiconductor layer disposed on the active layer; and

and the first contact electrode layer is electrically connected with the first semiconductor layer and comprises a plurality of conductive parts, wherein the conductive parts are positioned on one side of the first semiconductor layer, which is far away from the active layer, and the conductive parts comprise at least one peripheral conductive part, and the at least one peripheral conductive part is arranged below the second part of the first semiconductor layer.

2. The led apparatus of claim 1, further comprising:

a second contact electrode layer electrically connected to the second semiconductor layer and including a pad, wherein the plurality of conductive portions include a first conductive portion and a second conductive portion, a distance between the first conductive portion and a vertical projection of the pad on the first contact electrode layer is smaller than a distance between the second conductive portion and the vertical projection, and a maximum width of the first conductive portion is smaller than or equal to a maximum width of the second conductive portion.

3. The device of claim 1, wherein the second portion is an extension portion protruding outward from a bottom of the first portion, and the at least one peripheral conductive portion contacts the extension portion.

4. The device of claim 3, wherein the extension portion and the at least one peripheral conductive portion face a dicing lane area of the light emitting diode device, the dicing lane area being recessed from a top of the light emitting diode device.

5. The device of claim 3, wherein the extension portion and the at least one peripheral conductive portion are connected to an outer edge of the LED device.

6. The led apparatus of claim 1, further comprising:

and a second contact electrode layer disposed on the second semiconductor layer, wherein the first contact electrode layer further comprises an insulating portion disposed under the second contact electrode layer.

7. The device of claim 1, wherein the light emitting diode device has a light emitting area corresponding to the active layer, and a first total area occupied by the conductive portions is greater than 3% of an area of the light emitting area.

8. The LED device of claim 1, wherein the at least one peripheral conductive portion is disposed facing a dicing street region of the LED device, and a ratio of a second total area occupied by the at least one peripheral conductive portion to an area of the dicing street region is 5% to 15%.

9. The LED device according to claim 8, wherein the preferred ratio of the second total area occupied by the at least one peripheral conductive portion to the area of the dicing street area is 6% to 10%.

10. The led device of claim 9, wherein the optimal ratio of the second total area occupied by the at least one peripheral conductive portion to the area of the dicing street region is 7%.

Technical Field

The present disclosure relates to a light emitting diode device.

Background

In the design of the led, generally, increasing the area of the contact electrode can reduce the operating current density, thereby reducing the current thermal effect and improving the reliability of the led. However, increasing the area of the contact electrode may decrease the brightness of the light emitting diode.

Disclosure of Invention

In view of the above, an objective of the present disclosure is to provide a light emitting diode device that can achieve both reliability and brightness.

To achieve the above objects, according to some embodiments of the present disclosure, a light emitting diode device includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first contact electrode layer. The first semiconductor layer has a first portion and a second portion, the active layer covers the first portion of the first semiconductor layer and does not cover the second portion, and the second semiconductor layer is disposed on the active layer. The first contact electrode layer is electrically connected with the first semiconductor layer and comprises a plurality of conductive parts. The conductive part is positioned on one side of the first semiconductor layer far away from the active layer and comprises at least one peripheral conductive part, and the peripheral conductive part is arranged below the second part of the first semiconductor layer.

In one or more embodiments of the present disclosure, the light emitting diode device further includes a second contact electrode layer electrically connected to the second semiconductor layer and including a pad. The conductive part comprises a first conductive part and a second conductive part, the distance between the first conductive part and the vertical projection of the connecting pad on the first contact electrode layer is smaller than the distance between the second conductive part and the vertical projection, and the maximum width of the first conductive part is smaller than or equal to the maximum width of the second conductive part.

In one or more embodiments of the present disclosure, the second portion is an extending portion protruding outward from a bottom of the first portion, and the peripheral conductive portion contacts the extending portion.

In one or more embodiments of the present disclosure, the extending portion and the peripheral conductive portion face a dicing lane area of the led device, and the dicing lane area is recessed from a top of the led device.

In one or more embodiments of the present disclosure, the extending portion and the peripheral conductive portion are connected to an outer edge of the led device.

In one or more embodiments of the present disclosure, the light emitting diode device further includes a second contact electrode layer disposed on the second semiconductor layer. The first contact electrode layer further comprises an insulating part which is arranged below the second contact electrode layer.

In one or more embodiments of the present disclosure, the led device has a light emitting region corresponding to the active layer, and a first total area occupied by the conductive portions is more than 3% of an area of the light emitting region.

In one or more embodiments of the present disclosure, the peripheral conductive portion is disposed facing the dicing lane area of the light emitting diode device, and a ratio of a second sum area occupied by the peripheral conductive portion to an area of the dicing lane area is 5% to 15%.

In one or more embodiments of the present disclosure, a preferred ratio of the second sum area occupied by the peripheral conductive portions to the area of the dicing lane area is 6% to 10%.

In one or more embodiments of the present disclosure, the optimal ratio of the second sum area occupied by the peripheral conductive portion to the area of the dicing lane area is 7%.

In summary, in the light emitting diode device of the present disclosure, a portion of the conductive portion of the first contact electrode layer is disposed under a portion of the first semiconductor layer not covered by the active layer, so that the reliability of the light emitting diode device can be maintained, and the brightness of the light emitting diode device can be improved.

Drawings

In order to make the aforementioned and other objects, features, advantages and embodiments of the present disclosure more comprehensible, the following description is given with reference to the accompanying drawings:

FIG. 1 is a top perspective view illustrating a light emitting diode device according to an embodiment of the present disclosure;

FIG. 2 is a cross-sectional view of the LED device shown in FIG. 1 along line L-L';

fig. 3 to 10 are cross-sectional views illustrating the led device shown in fig. 2 at different stages of manufacturing.

[ notation ] to show

100: light emitting diode device

101: cutting walkway area

102: outer edge

103: luminous zone

110: first semiconductor layer

111: the first part

112: the second part

120: a second semiconductor layer

121: coarsening structure

130: active layer

140: a first contact electrode layer

141: conductive part

141 a: a first conductive part

141 b: second conductive part

142: insulating part

143: peripheral conductive part

150: second contact electrode layer

151: connecting pad

152: epitaxial structure

160: insulating layer

210: native substrate

220: reflective layer

230: second substrate

240: adhesive layer

250: adhesive layer

PR: vertical projection

S1, S2: distance between two adjacent plates

W1, W2: maximum width

Detailed Description

For a more complete and complete description of the present disclosure, reference is made to the accompanying drawings and the following description of various embodiments. The elements in the drawings are not to scale and are provided merely to illustrate the present disclosure. Numerous specific details are set forth in the following description in order to provide a thorough understanding of the present disclosure, however, it will be apparent to one of ordinary skill in the relevant art that the present disclosure may be practiced without one or more of the specific details, and therefore, such details should not be used to limit the present disclosure.

Please refer to fig. 1 and fig. 2. Fig. 1 is a top perspective view illustrating a light emitting diode device 100 according to an embodiment of the present disclosure, and fig. 2 is a cross-sectional view illustrating the light emitting diode device 100 shown in fig. 1 along a line L-L'. As shown in fig. 2, the led device 100 includes a first semiconductor layer 110, a second semiconductor layer 120 and an active layer 130 stacked on each other. The active layer 130 covers a portion of the first semiconductor layer 110, and the second semiconductor layer 120 is disposed on the active layer 130. The active layer 130 is located between the first semiconductor layer 110 and the second semiconductor layer 120, and is configured to emit light when holes and electrons from the first semiconductor layer 110 and the second semiconductor layer 120 combine.

In this embodiment, the led device 100 is a red led device or an infrared led device, the first semiconductor layer 110 and the second semiconductor layer 120 are a P-type semiconductor layer and an N-type semiconductor layer, respectively, and the second semiconductor layer 120 is located on the first semiconductor layer 110. In some embodiments, the first semiconductor layer 110 comprises gallium phosphide (GaP) and the second semiconductor layer 120 comprises aluminum gallium arsenide (AlGaAs). In some embodiments, the active layer 130 comprises a quantum well (quantum well).

As shown in fig. 1 and fig. 2, the light emitting diode device 100 further includes a first contact electrode layer 140. The first contact electrode layer 140 is located on a side of the first semiconductor layer 110 away from the active layer 130, and is electrically connected to the first semiconductor layer 110. The first contact electrode layer 140 includes a plurality of conductive portions 141 (shown by dotted lines in fig. 1) and insulating portions 142, the conductive portions 141 are distributed on the lower surface of the first semiconductor layer 110, and the insulating portions 142 cover the portions of the lower surface of the first semiconductor layer 110 where the conductive portions 141 are not disposed and electrically isolate the conductive portions 141. In some embodiments, the conductive portion 141 comprises a gold-zinc alloy and the insulating portion 142 comprises silicon dioxide.

As shown in fig. 1 and fig. 2, the light emitting diode device 100 further includes a second contact electrode layer 150, wherein the second contact electrode layer 150 is disposed on the second semiconductor layer 120 (specifically, the second contact electrode layer 150 is located on a side of the second semiconductor layer 120 away from the active layer 130) and is electrically connected to the second semiconductor layer 120. Under forward bias, current flows from the conductive portion 141 of the first contact electrode layer 140 to the second contact electrode layer 150 through the first semiconductor layer 110, the active layer 130, and the second semiconductor layer 120. In some embodiments, the second contact electrode layer 150 comprises a germanium-gold-nickel alloy.

As shown in fig. 2, the first semiconductor layer 110 includes a first portion 111 and a second portion 112, wherein the active layer 130 covers the first portion 111 and does not cover the second portion 112. The conductive portion 141 of the first contact electrode layer 140 includes at least one peripheral conductive portion 143, the peripheral conductive portion 143 is disposed under the second portion 112 of the first semiconductor layer 110, and in this configuration, the vertical projection of the active layer 130 on the first contact electrode layer 140 does not overlap with the peripheral conductive portion 143. In some embodiments, the led device 100 has a dicing street area 101, the dicing street area 101 is recessed from the top of the led device 100, and the peripheral conductive portion 143 is disposed facing the dicing street area 101.

In the present embodiment, a portion of the conductive portion 141 (i.e., the peripheral conductive portion 143) is disposed under a portion of the first semiconductor layer 110 not covered by the active layer 130 (i.e., the second portion 112 of the first semiconductor layer 110), so that the reliability of the light emitting diode device 100 can be maintained and the brightness thereof can be improved. In addition, compared with the insulating portion 142, the thermal resistance of the conductive portion 141 is lower, and therefore, the peripheral conductive portion 143 also has a function of guiding heat outwards, so that the light emitting diode device 100 of the present disclosure has a better heat dissipation effect.

As shown in fig. 1 and fig. 2, in some embodiments, the light emitting diode device 100 has a light emitting region 103, the light emitting region 103 corresponds to the active layer 130 and is surrounded by the dicing channel region 101, and a first total area occupied by the conductive portions 141 is more than 3% of an area of the light emitting region 103. When the first sum area is less than 3% of the area of the light emitting region 103, the light emitting diode device 100 is prone to light attenuation and has poor reliability. In some embodiments, the ratio of the second sum area occupied by the peripheral conductive portions 143 to the area of the dicing lane region 101 is 5% to 15%. When the ratio of the second sum area to the area of the dicing lane area 101 falls outside the above range, the light emitting diode device 100 is liable to suffer from insufficient luminance. In some embodiments, a preferred ratio of the second sum area occupied by the peripheral conductive portions 143 to the area of the dicing lane area 101 is 6% to 10%. In some embodiments, the optimal ratio of the second sum area occupied by the peripheral conductive portions 143 to the area of the dicing lane area 101 is 7%.

As shown in fig. 2, in some embodiments, the second portion 112 of the first semiconductor layer 110 is an extension portion of the first portion 111, the bottom side of which protrudes outward, and the peripheral conductive portion 143 contacts the extension portion. In some embodiments, the extension portion (i.e., the second portion 112 of the first semiconductor layer 110) extends below the dicing lane area 101 and faces the dicing lane area 101. In some embodiments, the extension portion (i.e., the second portion 112 of the first semiconductor layer 110) and the peripheral conductive portion 143 are connected to the outer edge 102 of the led device 100, in other words, the peripheral conductive portion 143 is arranged adjacent to the outer edge 102 of the led device 100, and the extension portion covers the peripheral conductive portion 143.

As shown in fig. 1 and fig. 2, in some embodiments, the second contact electrode layer 150 includes a pad 151 and an epitaxial structure 152. The pad 151 is used as a wire bonding region, and the epitaxial structure 152 is connected to the pad 151 and includes a plurality of connected interdigitated structures arranged on the second semiconductor layer 120, so that the current can uniformly pass through the diode structure (the first semiconductor layer 110, the second semiconductor layer 120, and the active layer 130).

As shown in fig. 2, in some embodiments, the insulating portion 142 of the first contact electrode layer 140 is located below the second contact electrode layer 150, in other words, a vertical projection of the pad 151/the epitaxial structure 152 of the second contact electrode layer 150 on the first contact electrode layer 140 does not overlap with the conductive portion 141, so as to facilitate current spreading. As shown in fig. 1, in a top view, there is a single row of conductive portions 141 between two adjacent interdigital structures or between an interdigital structure and the pad 151, but the disclosure is not limited thereto. In other embodiments, there are more than two rows of conductive portions 141 between two adjacent interdigital structures or between an interdigital structure and the pad 151 in a top view.

As shown in fig. 2, in some embodiments, the size of the conductive portion 141 increases as the distance between the conductive portion 141 and the vertical projection PR of the pad 151 on the first contact electrode layer 140 increases. In other words, the conductive portions 141 include the first conductive portion 141a and the second conductive portion 141b, the distance S1 between the first conductive portion 141a and the vertical projection PR is smaller than the distance S2 between the second conductive portion 141b and the vertical projection PR, and the maximum width W1 of the first conductive portion 141a is smaller than or equal to the maximum width W2 of the second conductive portion 141b (so the resistance of the first conductive portion 141a is greater than or equal to the resistance of the second conductive portion 141 b). The above configuration facilitates current spreading, and improves the reliability of the led device 100.

As shown in fig. 2, in some embodiments, the light emitting diode device 100 further includes an insulating layer 160 (not shown in fig. 1), and the insulating layer 160 is disposed on the second semiconductor layer 120 and the second contact electrode layer 150. The insulating layer 160 covers the epitaxial structure 152 and does not cover the pads 151, so that the pads 151 are exposed to connect to external leads (not shown). In some embodiments, the insulating layer 160 partially extends to the scribe lane region 101 and covers a side surface of the second semiconductor layer 120, a side surface of the active layer 130, a side surface of the first portion 111 of the first semiconductor layer 110, and a top surface of the second portion 112 of the first semiconductor layer 110. In some embodiments, the insulating layer 160 comprises silicon dioxide.

As shown in fig. 2, in some embodiments, the second semiconductor layer 120 has a roughening structure 121 on a side away from the active layer 130, and the roughening structure 121 is distributed between the pad 151 and the epitaxial structure 152 of the second contact electrode layer 150. The roughening structure 121 can destroy total reflection, thereby improving the light emitting efficiency of the light emitting diode device 100. The following describes a method/process for manufacturing the led device 100 with reference to fig. 2 to 10.

First, as shown in fig. 3, a native substrate 210 and a first semiconductor layer 110, a second semiconductor layer 120 and an active layer 130 epitaxially formed on the native substrate 210 are provided. In some embodiments, the native substrate 210 comprises two gallium arsenide layers (GaAs) and indium phosphide (InP) between the two GaAs layers.

Next, as shown in fig. 4, a first contact electrode layer 140 is formed on the first semiconductor layer 110. Specifically, in the step, an insulating material (e.g., silicon dioxide) is first plated on the first semiconductor layer 110, a hole is formed in the insulating material, a conductive material (e.g., gold-zinc alloy) is filled into the hole to form the conductive portion 141 of the first contact electrode layer 140, and the remaining insulating material forms the insulating portion 142 of the first contact electrode layer 140. In some embodiments, the holes of the insulating material are formed by exposure and development. In some embodiments, the conductive portion 141 is formed by evaporation.

Next, as shown in fig. 5, a reflective layer 220 is formed on the first contact electrode layer 140. In some embodiments, the reflective layer 220 is formed by evaporation. In some embodiments, the reflective layer 220 and the conductive portion 141 comprise the same material.

Next, as shown in fig. 6, a second substrate 230 and an adhesive layer 240(bonding layer) are formed on the reflective layer 220, wherein the adhesive layer 240 is located between the second substrate 230 and the reflective layer 220. In some embodiments, the second substrate 230 is a silicon substrate.

Next, as shown in fig. 7, a portion of the native substrate 210 is removed. In some embodiments, this step is performed by removing a portion of the native substrate 210 by wet etching. In some embodiments, after this step, a portion of the gaas layer remains on the second semiconductor layer 120.

Next, as shown in fig. 8, a second contact electrode layer 150 (including a pad 151 and an epitaxial structure 152) is formed on the remaining gaas layer.

Next, as shown in fig. 9, a roughening structure 121 is formed on a side of the second semiconductor layer 120 away from the active layer 130.

Next, as shown in fig. 10, a dicing street region 101 is formed on the periphery of the led device 100. Specifically, the step is to remove portions of the second semiconductor layer 120, the active layer 130 and the first semiconductor layer 110 to form a cut-off street 101 recessed from the top of the led device 100.

Finally, referring back to fig. 2, an insulating layer 160 is formed on the second semiconductor layer 120 and the second contact electrode layer 150, the insulating layer 160 covers the epitaxial structure 152 and does not cover the pads 151, and an adhesive layer 250 is formed under the second substrate 230. The adhesive layer 250 forms an ohmic contact with the second substrate 230 and may serve as an external connection interface of the light emitting diode device 100. After the led device 100 is cut and separated from the cutting lane area 101, the adhesive layer 250 may be thermally bonded into the concave cup structure (not shown) to form a led package. In some embodiments, the adhesion layer 250 comprises titanium or gold.

In summary, in the light emitting diode device of the present disclosure, a portion of the conductive portion of the first contact electrode layer is disposed under a portion of the first semiconductor layer not covered by the active layer, so that the reliability of the light emitting diode device can be maintained, and the brightness of the light emitting diode device can be improved.

Although the present disclosure has been described with reference to exemplary embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the disclosure, and therefore, the scope of the disclosure should be determined only by the appended claims.