阅读说明：本技术 发光装置及其电极 (Light emitting device and electrode thereof ) 是由 黄奕翔 蔡维隆 何育宇 蔡宇翔 于 2019-12-26 设计创作，主要内容包括：一种发光装置及其电极,电极包括第一电极以及辅助电极,辅助电极设置于第一电极上且覆盖部分的第一电极,第一电极的材料为掺杂金属的金属氧化物或碱金属盐类,辅助电极的材料包括金属或其合金。(The electrode comprises a first electrode and an auxiliary electrode, wherein the auxiliary electrode is arranged on the first electrode and covers part of the first electrode, the first electrode is made of metal oxide or alkali metal salt doped with metal, and the auxiliary electrode is made of metal or alloy thereof.)

1. An electrode for a light-emitting device, comprising:

a first electrode; and

and the auxiliary electrode is arranged on the first electrode and covers a part of the first electrode, wherein the material of the first electrode is metal oxide or alkali metal salt of doped metal, and the material of the auxiliary electrode comprises metal or alloy thereof.

2. The electrode for a light-emitting device according to claim 1, wherein the metal oxide comprises lithium superoxide or molybdenum trioxide; and the alkali metal salt comprises lithium fluoride, lithium borate, potassium silicate, cesium carbonate or acetate, and M is lithium, sodium, potassium, rubidium or cesium.

3. The electrode for a light-emitting device according to claim 1, wherein the metal doped in the first electrode comprises aluminum, calcium, silver, copper, magnesium, or an alloy thereof.

4. The electrode for a light-emitting device according to claim 1, wherein the metal doped in the first electrode comprises at least two different metals, and the at least two different metals comprise aluminum, calcium, silver, copper, magnesium, or an alloy thereof.

5. The electrode for a light-emitting device according to claim 1, wherein a mixing weight ratio of the doped metal to the alkali metal salt is 2:1 to 1:5, and a mixing weight ratio of the doped metal to the metal oxide is 2:1 to 1: 5.

6. The electrode for a light-emitting device according to claim 1, wherein the first electrode has a thickness of 30nm or less, and the auxiliary electrode has a thickness of 300nm to 500 nm.

7. The electrode for a light-emitting device according to claim 1, wherein the auxiliary electrode is in direct contact with the first electrode.

8. The electrode of claim 1, further comprising a metal layer, wherein the metal layer is between the first electrode and the auxiliary electrode, and the metal layer has a thickness of 5nm to 10 nm.

9. A light-emitting device, comprising:

a substrate;

an active element layer disposed on the substrate;

the insulating layer is arranged on the substrate and the active element layer;

a pixel defining layer disposed on a portion of the insulating layer;

a light emitting element disposed on the insulating layer, including a first electrode, a light emitting layer and a second electrode, wherein the second electrode is disposed on the insulating layer and between the insulating layer and the pixel defining layer, and electrically connected to the active element layer, and the light emitting layer is disposed between the second electrode and the first electrode;

an auxiliary electrode disposed on a portion of the first electrode and covering the active element layer; and

a thin film encapsulation layer covering the light emitting element and the auxiliary electrode;

wherein the material of the first electrode is a metal oxide or alkali metal salt doped with a metal, and the material of the auxiliary electrode comprises a metal or an alloy thereof.

10. The light-emitting device according to claim 9, wherein the metal oxide comprises lithium superoxide or molybdenum trioxide; and the alkali metal salt comprises lithium fluoride, lithium borate, potassium silicate, cesium carbonate or acetate, and M is lithium, sodium, potassium, rubidium or cesium.

11. The light-emitting device according to claim 9, wherein the metal doped in the first electrode comprises aluminum, calcium, silver, copper, magnesium, or an alloy thereof.

12. The light-emitting device according to claim 9, wherein a mixing weight ratio of the doped metal to the alkali metal salt is 2:1 to 1:5, and a mixing weight ratio of the doped metal to the metal oxide is 2:1 to 1: 5.

13. The light-emitting device according to claim 9, wherein the first electrode has a thickness of 30nm or less, and wherein the auxiliary electrode has a thickness of 300nm to 500 nm.

14. The light-emitting device according to claim 9, wherein the auxiliary electrode is in direct contact with the first electrode.

15. The light-emitting device according to claim 9, further comprising a metal layer, wherein the metal layer is between the first electrode and the auxiliary electrode, and the metal layer has a thickness of 5nm to 10 nm.

16. The light-emitting device according to claim 15, wherein the metal layer comprises silver or gold.

17. The light-emitting device according to claim 15, further comprising an optical matching layer, wherein the optical matching layer is conformally formed over the auxiliary electrode.

18. The light-emitting device according to claim 9, further comprising a metal oxide layer, wherein the metal oxide layer is located between the first electrode and the auxiliary electrode.

19. The light-emitting device according to claim 18, further comprising a lift-off layer, wherein the lift-off layer is disposed on the metal oxide layer exposed by the auxiliary electrode.

20. The light-emitting device according to claim 9, wherein the light-emitting device has a light-transmitting region and a non-light-transmitting region, the light-emitting layer is located in the light-transmitting region, and the auxiliary electrode is located in the non-light-transmitting region.

Technical Field

The invention relates to a light-emitting device and an electrode thereof.

Background

Light emitting devices, such as transparent light emitting devices, are used in life to improve convenience of information dissemination, such as smart show windows, advertisement signboards, and in-vehicle displays …, and therefore, are receiving attention and becoming one of the important targets for technical development.

The light emitting device generally comprises an electrode layer, a light emitting layer, a driving element, and various conducting wires (such as scan lines, data lines, etc.), and the electrode layer can be a transparent electrode to facilitate light emission. In order to achieve a high luminous efficiency of the transparent light emitting device, the transparency and conductivity of the transparent electrode must be considered, and especially when the transparent electrode is applied to a large-area light emitting device panel, the conductivity of the light emitting device must be considered.

In order to obtain high transparency, a high-transparency electrode may be introduced, but the Transmittance (Transmittance) of a conventional metal-based transparent electrode is reduced, which affects the Transmittance of the entire light-emitting device panel.

Another way to improve the transmittance is to make holes or through holes in the conventional metal-based transparent electrode, but this causes the problem of uneven brightness, and further increases the resistance value and sacrifices the conductivity, thereby affecting the light emitting efficiency of the device.

If the whole transparent metal oxide common cathode structure is used to manufacture the electrode of the transparent light-emitting device, a sputtering process is required, so that the surface of the light-emitting layer formed before the sputtering process of the electrode is damaged by the sputtering process.

Disclosure of Invention

Embodiments of the present invention provide an electrode of a light emitting device, which can achieve high transmittance and maintain high conductivity.

The embodiment of the invention provides a light-emitting device which is provided with the electrode and can be suitable for a large-size transparent display.

An embodiment of the present invention provides an electrode of a light emitting device, including a first electrode and an auxiliary electrode, where the auxiliary electrode is disposed on the first electrode and covers a portion of the first electrode, the first electrode is made of a metal oxide or an alkali metal salt doped with a metal, and the auxiliary electrode is made of a metal or an alloy thereof.

The embodiment of the invention provides a light-emitting device, which comprises a substrate, an active element layer, an insulating layer, a pixel definition layer, a light-emitting element, an auxiliary electrode and a thin film packaging layer, wherein the active element layer is arranged on the substrate; the insulating layer is arranged on the substrate and the active element layer; the pixel definition layer is arranged on part of the insulating layer; the light-emitting element is arranged on the insulating layer and comprises a first electrode, a light-emitting layer and a second electrode, wherein the second electrode is arranged on the insulating layer, is positioned between the insulating layer and the pixel defining layer and is electrically connected with the active element layer, and the light-emitting layer is positioned between the second electrode and the first electrode; the auxiliary electrode is arranged on part of the first electrode and covers the active element layer; the thin film packaging layer covers the light-emitting element and the auxiliary electrode; wherein the material of the first electrode is metal oxide or alkali metal salt doped with metal, and the material of the auxiliary electrode comprises metal or alloy thereof.

The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.

Drawings

Fig. 1A is a schematic cross-sectional view of a light-emitting device including an electrode according to a first embodiment of the present invention.

Fig. 1B is a top view of a light emitting device including a plurality of pixels.

FIG. 1C is a schematic cross-sectional view of a light-emitting device including multiple pixels.

Fig. 2 is a schematic diagram of the relationship between the thickness of the auxiliary electrode and the viewing angle of the viewer.

Fig. 3 is a schematic cross-sectional view of a light-emitting device including an electrode according to a second embodiment of the present invention.

Fig. 4 is a schematic cross-sectional view of a light-emitting device including an electrode according to a third embodiment of the present invention.

Fig. 5 is a schematic cross-sectional view of a light-emitting device including an electrode according to a fourth embodiment of the present invention.

Fig. 6 is a schematic cross-sectional view of a light-emitting device including an electrode according to a fifth embodiment of the present invention.

Fig. 7A and 7B show a first set of light emitting device structures used in optical simulations.

Fig. 7C is an optical simulation result of the first set of light emitting device structures.

Fig. 8A and 8B show a second set of light emitting device structures used in optical simulations.

Fig. 8C is an optical simulation result of the second group of light emitting device structures.

Fig. 9A and 9B show a third group of light-emitting device structures used in optical simulations.

Fig. 9C shows the optical simulation results of the third group of light-emitting device structures.

Fig. 10A and 10B show a fourth group of light-emitting device structures used in optical simulations.

Fig. 10C is an optical simulation result of the fourth group of light emitting device structures.

Wherein, the reference numbers:

100. 200, 300, 400, 500, 600, 700A, 700B: light emitting device

110: electrode for electrochemical cell

111: a first electrode

112: auxiliary electrode

120: substrate

130: active element layer

140: insulating layer

150: pixel definition layer

160: light emitting element

160': structure of the product

161: luminescent layer

162: second electrode

170: thin film encapsulation layer

180: cover plate

190: pixel

210: viewer

410: metal oxide layer

510: metallic film

520: optical matching layer

610: hydrophobic release layer

710: electrode for electrochemical cell

A_O: non-light-transmitting region

A_T: light-transmitting region

A_P: pixel definition layer region

A_E、A_E1、A_E2、A_E3: luminous zone

D1, D2: direction of rotation

L light ray

t₁、t₂₁、t₂₂: thickness of

V1, V2: line of sight

Detailed Description

The invention will be described in detail with reference to the following drawings, which are provided for illustration purposes and the like:

the following examples are described in detail with reference to the accompanying drawings, but the examples are not provided to limit the scope of the present invention. Further, the sizes of elements in the drawings are drawn for convenience of description and do not represent actual size ratios of the elements. Moreover, although the terms first, second, etc. may be used herein to describe various elements and/or layers, these elements and/or layers should not be limited by these terms. Rather, these terms are only used to distinguish one element or layer from another element or layer. Thus, a first element or film layer discussed below may be termed a second element or film layer without departing from the teachings of the embodiments.

Repeated reference characters and/or usage words may be used in various instances in describing embodiments of the invention. These repeated symbols or words are provided for simplicity and clarity and are not intended to limit the relationship of the various embodiments and/or the illustrated appearance structures. Furthermore, the following description of the present disclosure describes forming a first feature over or on a second feature, including embodiments in which the first feature is formed in direct contact with the second feature, and embodiments in which additional features are formed between the first feature and the second feature, such that the first feature and the second feature may not be in direct contact. For ease of understanding, like elements will be described hereinafter with like reference numerals.

Fig. 1A is a schematic cross-sectional view of a light-emitting device including an electrode according to a first embodiment of the present invention, and fig. 1B is a top view of the light-emitting device including a plurality of pixels, wherein fig. 1A is a schematic cross-sectional view of the light-emitting device shown in fig. 1B along a sectional line a-a.

Referring to fig. 1A, as shown in fig. 1A, the electrode 110 of the light emitting device 100 of the first embodiment includes a first electrode 111 and an auxiliary electrode 112, and the auxiliary electrode 112 is disposed on the first electrode 111 and covers a portion of the first electrode 111.

The material of the first electrode 111 is metal oxide or alkali metal salt doped with metal, for example, the metal oxide can be exemplified by, but not limited to, L iO₂(lithium superoxide) or MoO₃(molybdenum trioxide) and examples of alkali metal salts include, but are not limited to, L iF (lithium fluoride) and L iBO₃(lithium Borate), K₂SiO₃(Potassium silicate), Cs₂CO₃(cesium carbonate), CH₃COOM (acetate) (M is L i (lithium), Na (sodium), K (potassium), Rb (rubidium), or Cs (cesium)), the metal can be exemplified by, but not limited to, Al (aluminum), Ca (calcium), Ag (silver), Cu (copper), Mg (magnesium), or alloys thereof, such as Mg: Ag, L i: Al, etc. in the embodiment of FIG. 1A, the first electrode 111 can be fabricated by co-evaporation, such as co-evaporation using different evaporation sources in a vacuum chamber, so that metal oxides and metals, or alkali metal salts and metals can be simultaneously evaporated in close weight or volume ratios, such as in a range of 2:1 to 1:5, and in one embodiment according to the present invention, the metal to metal oxide or metal to alkali metal salts can be mixed in a weight ratio, such as in a range of 1:1 to 2:3, but the present invention is not limited thereto, and further, the thickness of the first electrode 111 is less than or equal to 30nm, and in one embodiment, the first electrode 111 has a thickness, such as in a range of 5 to 15 nm.

The material of the first electrode 111 may be doped with an organic material in addition to metal oxide or alkali metal salt doped with metal, so as to improve transparency.

The auxiliary electrode 112 includes a conductive metal material or alloy, and may be exemplified by, but not limited to, Mg (magnesium), Al (aluminum), Ag (silver), Au (gold), Cu (copper). The auxiliary electrode 112 may directly contact the first electrode 111, or other elements may be disposed between the first electrode 111 and the auxiliary electrode. The auxiliary electrode 112 may be formed by evaporation, inkjet printing (IJP), screen printing (screen printing), sputtering (sputtering), or the like. When the weight of the metal and the metal oxide or the metal and the alkali metal salt are mixed in a specific ratio and matched with the thickness of the first electrode 111, the first electrode 111 with high transmittance and certain conductivity can be formed, and the transparency of the transparent light-emitting device can be improved by matching with the auxiliary electrode 112 capable of improving the conductivity of the panel.

Referring to fig. 1A again, the light emitting device 100 of the first embodiment of fig. 1A includes a light emitting element 160, wherein the light emitting element 160 may include a first electrode 111, a light emitting layer 161, and a second electrode 162.

In an embodiment according to the present invention, the light emitting device 160 may include a first carrier injection layer (not shown), a first carrier transmission layer (not shown), a second carrier blocking layer (not shown), a light emitting layer (emission layer)161, a first carrier blocking layer (not shown), a second carrier transmission layer (not shown), and a second carrier injection layer (not shown) sequentially disposed from the second electrode 162 to the first electrode 111, wherein the first and second carriers may be different types of carriers, such as a hole (electron) for the first carrier and an electron (electron) for the second carrier, but the embodiment according to the present invention may not be limited thereto, and may be adjusted according to requirements.

The second electrode 162 can be an anode of the light emitting device 160, the first electrode 111 can be a cathode of the light emitting device 160, and the anode and the cathode can provide current to the light emitting layer 161 to emit light L. according to the embodiment of the invention, in the transparent light emitting device, the second electrode 162 and the first electrode 111 can be both transparent electrodes, and the material of the second electrode 162 can include metal Oxide, such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), aluminum-Zinc Oxide (AZO), Zinc Oxide (ZnO), or gallium-gallium Oxide (GZO), but is not limited thereto.

In one embodiment, the first electrode 111 is formed by an evaporation process, and the auxiliary electrode 112 is also formed by an evaporation process, so that the compatibility with the conventional AMO L ED process is high when manufacturing an Active Matrix O L ED (AMO L ED).

Referring to fig. 1A, the light emitting device 100 further includes a substrate 120, an active element layer 130, an insulating layer 140, a pixel definition layer (PD L) 150, a light emitting element 160, an auxiliary electrode 112, a film encapsulation layer 170, and a cover plate 180, wherein the light emitting element 160 includes a second electrode 162, a light emitting layer 161, and a first electrode 111, the active element layer 130 is disposed on the substrate 120, the insulating layer 140 is disposed on the substrate 120 and the active element layer 130, the second electrode 162 is disposed on the insulating layer and electrically connected to the active element layer 130, the pixel definition layer 150 is disposed on a portion of the second electrode 162 and the insulating layer 140, the light emitting layer 161 is disposed on the second electrode 162 and the pixel definition layer 150, the first electrode 111 is disposed on the light emitting layer 161, the auxiliary electrode 112 is disposed on the first electrode 111 and covers the active element layer 130 and exposes a portion of the first electrode 111, wherein the first electrode 111 is disposed between the auxiliary electrode 162 and the light emitting layer 161, the film encapsulation layer 170 is disposed on the auxiliary electrode 112 and the first electrode 111 not covered by the auxiliary electrode 112, the cover plate 180 is selectively formed on the substrate (the buffer layer), and the buffer layer is not shown).

Referring to fig. 1A and 1B, fig. 1B is a top view of a light emitting device 100 including a plurality of pixels, the light emitting device 100 can be defined by a pixel defining layer 150A plurality of pixels 190, a light emitting region A in the pixels 190_ELayer region A is defined by the pixels in the pixels 190_PExcept for the second electrode 162, the light-emitting layer 161 and the first electrode 111, the light-emitting layer 161 sandwiched between the second electrode 162 and the first electrode 111 can emit light L to form a light-emitting region A_E. In this embodiment, the plurality of pixels 190 are arranged in an array on the substrate 120. The light emitting device 100 includes a non-light transmitting region A_OAnd a light-transmitting region A_T. Light-transmitting region A_TThe other region is the position of the auxiliary electrode 160 to form a non-light-transmitting region A_O. Light-transmitting region A_TIncluding a pixel definition layer region A_PAnd luminous zone A_E. That is, the auxiliary electrode 112 is disposed in the opaque region A_OIn addition, the auxiliary electrode 112 covers the active element layer 120. The auxiliary electrode 112 may selectively cover the entire pixel defining layer 150.

Referring to fig. 1A and 1B again, in this embodiment, the color of the light emitted from the light-emitting layer 161 of each of the pixels 190 may be the same as or different from the color of the light emitted from the light-emitting layer 161 of the adjacent pixel. The light-emitting layer 161 of the light-emitting device 100 includes a first color light-emitting layer in different pixels (for example, the light-emitting region shown in fig. 1B is a_E1) A second color light emitting layer (for example, the light emitting region shown in FIG. 1B is A)_E2) And a third color light emitting layer (for example, the light emitting region shown in FIG. 1B is A)_E3) In the embodiment shown in FIG. 1B, the light emitting region A_E1、A_E2And A_E3Sequentially and repeatedly arranged along the first direction D1 as shown in FIG. 1B on the substrate 120, and along the light-emitting region A on the second direction D2_E1、A_E3And A_E2Are repeatedly arranged. The first direction D1 is substantially perpendicular to the second direction D2. In an embodiment, the colors of the light emitted by the light emitting layer 161 of each pixel, such as the first color, the first color and the third color, may be red, blue and green, respectively, but in other embodiments, the first color and the third color may be other colors, and the invention is not limited to the colors of the first color, the first color and the third color. In addition, the above description is directed to the light emitting device 100 includes three pixel colors for illustration, but the light emitting device 100 may include three or more or three or less pixel colors, which is not limited by the invention.

The arrangement of the pixels with different colors in the embodiment shown in fig. 1B is only an example, and the arrangement of the pixels is not limited in the present invention, and the areas of the pixels with different colors may be the same or different, and the present invention does not limit this.

Referring to fig. 1C, fig. 1C is a schematic cross-sectional view of a light emitting device 100 including a plurality of pixels 190, wherein fig. 1C only shows some elements of the light emitting device 100. As shown in fig. 1C, the light-emitting device 100 only shows the substrate 120, the active element layer 130, the light-emitting element 160, and the auxiliary electrode 112. The light-emitting device 160 includes a structure 160' composed of a second electrode and a light-emitting layer, a first electrode 111 and an auxiliary electrode 112. If the second electrode is already formed in the active device layer 130, the structure 160' can be a light-emitting layer. The light-emitting device 100 of fig. 1C may also include the components shown in fig. 1A and 1B but not shown in fig. 1C, which are not described herein again. The auxiliary electrode 112 is a patterned structure, and the region where the auxiliary electrode 112 is located is a non-light-transmitting region A_OA light-transmitting region A between the auxiliary electrodes 160_T。

The substrate 120 is, for example, a flexible substrate, and the material of the substrate 120 includes Glass, metal foil (metafoil), Plastic material or Polymer material, such as Polyimide (PI), polyimide and inorganic mixture (hybrid PI), Polyethylene terephthalate (PET), Polyethersulfone (PES), Polyacrylate (PA), Polyethylene naphthalate (PEN), Polycarbonate (PC), poly (ortho-styrene, PNB), polyether imide (PEI), polyether ether ketone (PEEK), cyclic olefin Polymer (Cyclo-olefin, COP), polymethyl methacrylate (PMMA), Glass Fiber Reinforced Plastic (Glass Fiber Reinforced Plastic, Plastic Reinforced Plastic (GFRP), Carbon Fiber Reinforced Polymer (cfberrp), and other suitable flexible materials. However, in other embodiments not shown, the substrate 110 may be made of glass or other hard materials. Alternatively, the substrate 120 may be a composite substrate made of multiple layers of organic materials and/or inorganic materials having a moisture blocking function, so as to have the moisture blocking function, and the invention is not limited to the type and composition of the substrate 120.

The active element layer 130 includes, for example, a Thin Film Transistor (TFT), which may be an Organic Thin Film Transistor (OTFT), but the present invention is not limited to the active element layer 130 including or being an organic thin film transistor.

The insulating layer 140 is, for example, an organic passivation layer (OPV), and a patterning process may be performed to electrically connect the second electrode 162 and the active device layer 130.

The pixel defining layer 150 is, for example, Photosensitive resin (Photosensitive resin). The film encapsulation layer 170 may include a plurality of inorganic films stacked on one another, wherein the inorganic films include silicon nitride films and silicon oxycarbide (SiOC) films stacked alternately. However, the number of layers and materials of the inorganic thin films are not limited in other embodiments according to the present invention, and in these other embodiments, the thin film encapsulation layer 170 includes a single layer or multiple layers of organic thin films or an alternating stack of inorganic thin films, or a combination thereof. For example, the inorganic material includes aluminum oxide (Al)₂O₃) Silicon oxide (SiO)_x) Silicon nitride (SiN)_x) Silicon oxynitride (SiO)_xN_y) Or silicon oxycarbide (SiOC); the organic material includes parylene, polymer, or acrylic. Which can be appropriately modified according to the actual design requirements.

The cover plate 180 is, for example, a flexible substrate, and the material of the cover plate 180 includes Glass, metal foil (metal foil), Plastic material or polymer material, such as Polyimide (PI), polyimide and inorganic mixture (hybrid PI), Polyethylene terephthalate (PET), Polyethersulfone (PES), Polyacrylate (PA), Polyethylene naphthalate (PEN), Polycarbonate (PC), poly ortho-styrene (PNB), polyether imide (PEI), polyether ether ketone (PEEK), cyclic olefin polymer (cyloolefin, COP), polymethyl methacrylate (PMMA), Glass Fiber Reinforced Plastic (GFRP), Carbon Fiber reinforced polymer (cfberrp), or other suitable flexible materials. However, in other embodiments not shown, the cover plate 180 may be made of glass or other hard materials. Alternatively, the cover plate 180 may also be a composite substrate made of multiple layers of organic materials and/or inorganic materials having a moisture blocking function, so as to have the moisture blocking function, and the invention is not limited to the type and composition of the substrate cover plate 180.

Referring to fig. 2, fig. 2 is a schematic diagram illustrating a relationship between the thickness of the auxiliary electrode and the viewing angle of the viewer. The light emitting device 200 of fig. 2 shows only the substrate 120, the second electrode 162, the pixel defining layer 150, the light emitting layer 161, the first electrode 111, and the auxiliary electrode 112, and does not show other elements as shown in fig. 1A. The first electrode 111 has a thickness t₁，t₁Less than 30 nm. When the thicknesses of the auxiliary electrodes 112 are t₂₁And t₂₂When (t)₂₂Greater than t₂₁) The visual lines of the viewer 210 are respectively V1 and V2, and it can be seen that the thicknesses of the auxiliary electrodes 112 are respectively t₂₁And t₂₂When the viewing angle of the viewer 210 is different, the auxiliary electrode 112 has a smaller thickness t₂₁When the viewing angle of the viewer 210 is large. And a larger thickness t at the auxiliary electrode 112₂₂When the viewing angle of the viewer 210 is small. The resistance of the cathode of the light emitting device 200 is too high, which tends to cause uneven light emission of the light emitting device 200, and the total resistance of the cathode of the light emitting device 200 is determined by the first electrode 111 and the auxiliary electrode 112, which are connected in parallel, so that the resistance of the auxiliary electrode 112 is decreased when the resistance of the first electrode 111 is increased, thereby preventing uneven light emission of the light emitting device 200. However, in order to improve the transparency of the light emitting device 200, the thickness of the first electrode 111 is thinner, that is, the thickness of the first electrode 111 is thinner than the transparency of the light emitting device 200Inversely, the thickness of the auxiliary electrode 112 needs to be increased to make the total resistance of the cathode within a certain range, so as to avoid the non-uniform light emission of the light-emitting device 200. However, as described above, too large a thickness of the auxiliary electrode 112 may affect the viewing angle of the viewer 210. Therefore, the thickness of the auxiliary electrode 112 needs to be matched with the thickness of the first electrode 111 to achieve the requirements of high transparency and uniform light emission of the transparent light emitting device 200, so that when the thickness of the first electrode 111 is less than or equal to 30nm, the thickness of the auxiliary electrode 112 is 300nm to 1500nm, in an embodiment, the thickness of the first electrode 111 is, for example, 10nm, and the thickness of the auxiliary electrode 112 is, for example, 500 nm.

The display device completed by the above embodiments can be applied to medium and large size transparent displays, such as transparent displays above 15 inches.

Fig. 3 is a schematic cross-sectional view of a light-emitting device including a transparent electrode according to a second embodiment of the present invention.

Referring to fig. 3, as shown in fig. 3, the light emitting device 300 of the present embodiment is similar to the light emitting device 100 of the first embodiment shown in fig. 1C, so the same elements are denoted by the same reference numerals, and the description thereof is not repeated, the main difference between the light emitting device 300 and the light emitting device 100 is that the metal doped in the metal oxide or alkali metal salt in the first electrode 111 of the light emitting device 300 includes at least two different metals, such as, but not limited to, Al (aluminum), Ca (calcium), Ag (silver), Cu (copper), Mg (magnesium) or alloys thereof, such as Mg: Ag, L i: Al, etc. in the embodiment shown in fig. 3, the first electrode 111 can also be fabricated by co-evaporation, such as co-evaporation performed by using different evaporation sources in a vacuum chamber, so that the metal oxide and at least two different metals can be simultaneously evaporated at a close weight or volume ratio, or the alkali metal salt can be simultaneously evaporated at two metals, wherein the weight ratio of the at least two metals to the metal oxide or metal and the metal salt is, for example, between 2: 1:5, but the mixed weight ratio of the embodiment is not less than the first metal oxide and the thickness of the embodiment shown in fig. 3, and is not less than the first embodiment shown in the present invention.

In this embodiment, the first electrode 111 formed by doping two different metals in metal oxide or alkali metal salt can improve its conductivity or electron injection capability, and the resistance of the series connection of the electrodes can be reduced by matching with an auxiliary electrode, such as a patterned auxiliary electrode on the first electrode 111.

Fig. 4 is a schematic cross-sectional view of a light-emitting device including a transparent electrode according to a third embodiment of the present invention.

Referring to fig. 4, as shown in fig. 4, the light emitting device 400 of the present embodiment is similar to the light emitting device 100 of the first embodiment shown in fig. 1C, and therefore the same elements are denoted by the same reference numerals and will not be described again. The main difference between the light emitting device 400 and the light emitting device 100 is that the light emitting device 400 further includes a metal oxide layer 410 disposed between the first electrode 111 and the auxiliary electrode 112. The material of the metal Oxide layer 410 includes Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Aluminum Zinc Oxide (AZO), Zinc Oxide (ZnO), or Zinc gallium Oxide (GZO), etc., but embodiments of the present invention are not limited to the foregoing materials. The thickness of the metal oxide layer 410 is less than 200 nm. The metal oxide layer 410 may be formed by sputtering. In the embodiment shown in fig. 4, the metal doped in the metal oxide or alkali metal salt may also include at least two different metals. If the first electrode 111 is formed by doping metal in metal oxide, the metal oxide in the metal oxide layer 410 and the metal oxide in the first electrode 111 may be the same or different.

In the embodiment shown in fig. 4, a metal oxide layer 410 is disposed between the first electrode 111 and the auxiliary electrode 112 to further improve the uniformity and transparency of the panel.

Fig. 5 is a schematic cross-sectional view of a light-emitting device including a transparent electrode according to a fourth embodiment of the present invention.

Referring to fig. 5, as shown in fig. 5, the light emitting device 500 of the present embodiment is similar to the light emitting device 100 of the first embodiment shown in fig. 1C, so the same elements are denoted by the same reference numerals, and the description thereof is not repeated, the main difference between the light emitting device 500 and the light emitting device 100 is that the light emitting device 500 further includes a metal layer 510 disposed between the first electrode 111 and the auxiliary electrode 112, and an optical matching layer 520 covering the auxiliary electrode 112, the optical matching layer 520 may be conformally (conformally) formed on the auxiliary electrode 112, the optical matching layer 520 may cover the upper surface and the side surface of the auxiliary electrode 112, and the surface of the metal layer 510 exposed by the auxiliary electrode 112, the material of the metal layer 510 includes, for example, silver (Ag), gold (Au), and the like, but not limited thereto, the thickness of the metal layer 510 is about 5nm to 10nm, the transmittance is greater than or equal to 50%, the material forming the metal layer 510 includes evaporation, the material of the optical hole matching layer 510 may, for example, a holeyer layer L, a layer L, a metal layer 520 including a refractive index matching layer with a refractive index adjusting material with a refractive index adjusting property of at least one of the metal layer 520, and a refractive index adjusting material with a refractive index of the metal layer including a refractive index adjusting material with a refractive index of the metal layer including a refractive index adjusting material of the metal layer 520, and a refractive index adjusting material of the metal layer including at least one of the metal layer including a refractive index adjusting material of the metal layer 5 to.

In the embodiment shown in fig. 5, the optical matching layer 520 may be omitted depending on design requirements. Compared to using transparent conductive oxide (such as ITO) as the electrode, the embodiment shown in fig. 5 uses the metal layer 510 to increase the conductivity, the thickness can be smaller than that of the transparent conductive oxide, and the yellowing index (yellow index) b is smaller without additional sputtering chamber. Due to the arrangement of the metal layer 510 and the optical matching layer 520, the uniformity and transparency of the panel of the light emitting device can be further improved.

Fig. 6 is a schematic cross-sectional view of a light-emitting device including a transparent electrode according to a fifth embodiment of the present invention.

Referring to fig. 6, as shown in fig. 6, a light emitting device 600 of the present embodiment is similar to the light emitting device 400 of the third embodiment shown in fig. 4, so the same elements are denoted by the same reference numerals, and the description of the third embodiment is referred to, and will not be repeated here. The main difference between the light emitting device 600 and the light emitting device 400 is that the light emitting device 600 further includes a thinning layer (epitaxial layer)610 disposed on the metal oxide layer 410 exposed by the auxiliary electrode 112. The lift-off layer 610 may comprise an organic material having a thickness of about 20-30nm, and may be formed by evaporation, and the lift-off layer 610 may have optical matching. In one embodiment, the patterned isolation layer 610 may be formed first, and then the patterned auxiliary electrode 112 may be formed by evaporation, for example. In one embodiment, the metal oxide layer 410 may be replaced by a metal layer, which may include silver (Ag) or gold (Au), with a thickness of, for example, about 5nm to 10nm, or the metal oxide layer 410 may be omitted. In addition, in the embodiment shown in fig. 6, the metal doped in the metal oxide or alkali metal salt may also include at least two different metals.

In the embodiment shown in fig. 6, the first electrode 111 cooperates with the metal oxide layer 410 and the auxiliary electrode 112 to further improve the uniformity and transparency of the panel of the light emitting device. The auxiliary electrode 112 may be added with an optically matching lift-off layer 610 for metal patterning to improve transparency.

Next, optical simulation is performed by using light emitting devices with different structures, and the optical effect of the light emitting device according to the embodiment of the present invention is described. Fig. 7A and 7B show a first set of light emitting device structures used in optical simulations. Fig. 7C is an optical simulation result of the first set of light emitting device structures.

Please refer to fig. 7A and fig. 7B. FIG. 7A is a light emitting device 700A for optical simulation according to one embodiment of the present invention, the structure shown in FIG. 7A only includes a light emitting region A_EThe light emitting device 700A includes a substrate 120, a light emitting layer 161, a first electrode 111, a metal layer 510 and a cover plate 180, the light emitting layer 161 is disposed on the substrate 120, the first electrode 111 is disposed on the light emitting layer 161, the metal layer 510 is disposed on the first electrode 111, and the cover plate 180 is disposed on the metal film 510, the metal layer 510 is made of silver (Ag), the substrate 120, the light emitting layer 161, the first electrode 111, the metal film 510 and the cover plate 180 are made of the materials according to the above embodiments, the first electrode 111 is an alkali metal salt L iF doped with aluminum (Al), the mixing weight ratio of Al and L iF is 2:3, and the light emitting device 700AThe thicknesses of the light-emitting layer 161, the first electrode 111, the metal layer 510, and the cover plate 180 of a are 100nm, 7nm, and 20nm, respectively.

Fig. 7B shows a light-emitting device 700B of a comparative example, wherein the light-emitting device 700B includes a substrate 120, a light-emitting layer 161, a first electrode 111, an electrode 710, and a cover plate 180. The light emitting layer 161 is disposed on the substrate 120, the first electrode 111 is disposed on the light emitting layer 161, the electrode 710 is disposed on the first electrode 111, and the cover plate 180 is disposed on the electrode 710. The electrode 710 is made of Indium Zinc Oxide (IZO). The thicknesses of the light-emitting layer 161, the first electrode 111, the electrode 710, and the cover plate 180 of the light-emitting device 700B were 100nm, 7nm, and 20nm, respectively. The materials of the substrate 120, the light-emitting layer 161, the first electrode 111, and the cover plate 180 of the light-emitting device 700B are the same as those of the corresponding elements of the light-emitting device 700A.

Fig. 7C shows the optical simulation results of different light-emitting devices. That is, fig. 7C depicts the optical simulation results of the light-emitting device 700A and the light-emitting device 700B of the comparative example. The horizontal axis of FIG. 7C is wavelength in nm; the vertical axis represents the Transmittance (transmission). The solid line curve is a wavelength-transmittance relationship curve of the light-emitting device 700A, and the dashed line curve is a wavelength-transmittance relationship curve of the light-emitting device 700B of the comparative example, and it can be seen from fig. 7C that the transmittance of the light-emitting device 700A is higher than the transmittance of the light-emitting device 700B in the visible light wavelength range (about 400nm to 700nm) at the same wavelength. In the embodiment of the invention, the metal oxide or alkali metal salt doped with metal and the auxiliary electrode are used as the cathode, but the auxiliary electrode is arranged in the non-luminous region of the light-emitting device, so that the simulated element does not comprise the auxiliary electrode. Fig. 7C shows that the transmittance of the light-emitting device 700A is high and the yellowing rate of the light-emitting device is low because the light-emitting device 700A uses silver metal and the first electrode 111 as cathodes, and the light-emitting device 700B of the comparative example uses transparent metal oxide (e.g., IZO) and the first electrode 111 as cathodes.

Fig. 8A and 8B show a second set of light emitting device structures used in optical simulations. Fig. 8C is an optical simulation result of the second group of light emitting device structures.

Referring first to fig. 8A and 8B, fig. 8A and 8B are optical simulationsAnother group of light emitting device structures is used. FIG. 8A is a light emitting device 800A according to an embodiment of the present invention for use in optical simulation, the structure shown in FIG. 8A only including a light emitting region A_EThe light emitting device 800A includes a substrate 120, a light emitting layer 161, a first electrode 111, a metal layer 510, and a cover plate 180, the light emitting layer 161 is disposed on the substrate 120, the first electrode 111 is disposed on the light emitting layer 161, the metal layer 510 is disposed on the first electrode 111, and the cover plate 180 is disposed on the metal film 510, the metal layer 510 is made of silver (Ag), the substrate 120, the light emitting layer 161, the first electrode 111, the metal film 510, and the cover plate 180 are made of materials according to the above embodiments, the first electrode 111 is an alkali metal salt L iF doped with metal aluminum (Al), and the mixing weight ratio of Al and L iF is 2: 3.

Fig. 8B shows a light-emitting device 800B according to a comparative example, in which the light-emitting device 800B includes a substrate 120, a light-emitting layer 161, a first electrode 111, and an electrode 810. The light-emitting layer 161 is disposed on the substrate 120, the first electrode 111 is disposed on the light-emitting layer 161, and the electrode 810 is disposed on the first electrode 111. The electrode 810 is made of Indium Zinc Oxide (IZO). The thicknesses of the light-emitting layer 161, the first electrode 111, and the electrode 810 of the light-emitting device 800B were 40nm, 7nm, and 300nm, respectively. The materials of the substrate 120, the light-emitting layer 161, and the first electrode 111 of the light-emitting device 800B are the same as those of the corresponding elements in the light-emitting device 800A.

Fig. 8C shows the optical simulation results of different light-emitting devices. That is, fig. 8C depicts the optical simulation results of the light-emitting device 800A and the light-emitting device 800B of the comparative example. The horizontal axis of fig. 8C is wavelength in nm; the vertical axis represents the Transmittance (transmission). The solid line curve is the wavelength versus transmittance curve of the light-emitting device 800A, and the dashed line curve is the wavelength versus transmittance curve of the light-emitting device 800B of the comparative example. Table 1 shows the transmittance (%), the yellowing rate B, and the electrical conductivity (Ω/□, the unit of the electrical conductivity may be ohm meters or ohm meters) of the light-emitting device 800A and the light-emitting device 800B of the comparative example. As can be seen from fig. 8C and table 1, the transmittance of the light-emitting device 800A was low at a wavelength of 550nm, but the yellowing factor was significantly reduced to-3.3 compared to the yellowing factor of 14.7 of the light-emitting device 800B. In the embodiment of the invention, the metal oxide or alkali metal salt doped with metal and the auxiliary electrode are used as the cathode, but the auxiliary electrode is arranged in the non-luminous region of the light-emitting device, so that the simulated element does not comprise the auxiliary electrode.

TABLE 1

Device for measuring the position of a moving object	Penetration (%)	Yellowing rate b	Conductivity (omega/□)
				800A	77.2	14.7	27.9
800B	64.4	-3.3	40

Fig. 9A and 9B show a third group of light-emitting device structures used in optical simulations. Fig. 9C shows the optical simulation results of the third group of light-emitting device structures.

Referring first to fig. 9A and 9B, fig. 9A and 9B illustrate a third set of light emitting device structures used in optical simulation. The light emitting device 900A shown in FIG. 9A includes only the light emitting region A_E. The light-emitting device 900A includes a substrate 120, a light-emitting layer 161, and a first electrode 111. A light-emitting layer 161 disposed on the substrate 120 and having a first electrodeThe electrode 111 is disposed on the light-emitting layer 161, the materials of the substrate 120, the light-emitting layer 161, and the first electrode 111 can be referred to the above embodiments, the first electrode 111 is an alkali metal salt L iF doped with metal aluminum (Al), the weight ratio of Al to L iF is 2:3, and the thicknesses of the light-emitting layer 161 and the first electrode 111 of the light-emitting device 900A are 40nm and 7nm, respectively.

Fig. 9B shows a light-emitting device 900B of a comparative example, and the light-emitting device 900B includes a substrate 120, a light-emitting layer 161, a metal layer 510 (serving as an electrode), and a cover plate 180. The light emitting layer 161 is disposed on the substrate 120, the metal layer 510 is disposed on the light emitting layer 161, and the cover plate 180 is disposed on the metal layer 510. The thicknesses of the light-emitting layer 161, the metal layer 510, and the cover plate 180 of the light-emitting device 900B are 40nm, 14nm, and 40nm, respectively. The materials of the substrate 120 and the light-emitting layer 161 of the light-emitting device 900B are the same as those of the corresponding elements in the light-emitting device 900A.

Fig. 9C shows optical simulation results of different light-emitting devices, that is, fig. 9C shows optical simulation results of the light-emitting device 900A and the light-emitting device 900B of the comparative example, in which the horizontal axis of fig. 9C shows wavelength in nm, and the vertical axis shows Transmittance (Transmittance), the solid curve shows wavelength-Transmittance relationship curve of the light-emitting device 900A, and the dotted curve shows wavelength-Transmittance relationship curve of the light-emitting device 900B of the comparative example, it can be seen from fig. 9C that in the visible light wavelength range (about 400nm to 700nm), the Transmittance of the light-emitting device 900A is higher than that of the light-emitting device 900B at the same wavelength using the metal layer L iF doped with aluminum (Al) as an electrode, compared with the metal layer as an electrode, the metal oxide or alkali metal salt doped with aluminum (Al) is used as a cathode in the embodiment of the present invention, but the auxiliary electrode is disposed in the non-light-emitting region of the light-emitting device, and thus the simulated element does not include the auxiliary electrode.

Fig. 10A and 10B show a fourth group of light-emitting device structures used in optical simulations. Fig. 10C is an optical simulation result of the fourth group of light emitting device structures.

Referring first to fig. 10A and 10B, fig. 10A and 10B illustrate a fourth set of light emitting device structures used in optical simulation. The structure shown in fig. 10A includes only the light emitting region a_E. The light emitting device 1000A includes a substrate 120, a light emitting layer 161, a first electrodeThe light-emitting layer 161 is disposed on the substrate 120, the first electrode 111 is disposed on the light-emitting layer 161, the metal layer 510 is disposed on the first electrode 111, and the cover plate 180 is disposed on the metal thin film 510. the material of the metal layer 510 is silver (Ag), the materials of the substrate 120, the light-emitting layer 161, the first electrode 111, the metal thin film 510, and the cover plate 180 can be referred to the above embodiments, the first electrode 111 is an alkali metal salt L iF doped with aluminum (Al), the weight ratio of the mixture of Al and L iF is 2:3, and the thicknesses of the light-emitting layer 161, the first electrode 111, the metal layer 510, and the cover plate 180 of the light-emitting device 1000A are 40nm, 7nm, 14nm, and 40nm, respectively.

Fig. 10B shows a light-emitting device 1000B of a comparative example, and the light-emitting device 1000B includes a substrate 120, a light-emitting layer 161, a metal layer 510 (serving as an electrode), and a cover plate 180. The light emitting layer 161 is disposed on the substrate 120, the metal layer 510 is disposed on the light emitting layer 161, and the cover plate 180 is disposed on the metal layer 510. The thicknesses of the light-emitting layer 161, the metal layer 510 and the cover plate 180 are 40nm, 14nm and 40nm, respectively. The materials of the substrate 120 and the light-emitting layer 161 of the light-emitting device 1000B are the same as those of the corresponding elements in the light-emitting device 1000A.

Fig. 10C shows optical simulation results of different light emitting devices, that is, fig. 10C depicts optical simulation results of the light emitting device 1000A and the light emitting device 1000B of the comparative example, the horizontal axis of fig. 10C is wavelength in nm, the vertical axis is Transmittance (Transmittance), the solid curve is a wavelength-Transmittance relationship curve of the light emitting device 1000A, and the dotted curve is a wavelength-Transmittance relationship curve of the light emitting device 1000B of the comparative example, it can be seen from fig. 10C that in the visible light wavelength range (about 400nm to 700nm), the Transmittance of the light emitting device 1000A is higher than that of the light emitting device 1000B of the comparative example by using the alkali metal salt L iF doped with metallic aluminum (Al) as an electrode compared with the metal layer as an electrode except for a short wavelength (about 425nm or less), the Transmittance is higher than that of the light emitting device 1000B of the comparative example at the same wavelength, the alkali metal salt is used as a Surface Plasmon effect (SPP) reducing, the Transmittance is improved, the metal doped electrode layer is used as an auxiliary electrode, and the light emitting device does not include an oxide or an auxiliary electrode.

In summary, the embodiments of the invention include using metal-doped metal oxide or alkali metal salt as an electrode of a light emitting device, which is compatible with the conventional AMO L ED process and does not require complicated process and structure design, so as to improve the overall transmittance of the electrode and maintain high conductivity, and can be widely applied to transparent products to achieve the effects of improving the transmittance and increasing the light emitting efficiency.

The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.