阅读说明：本技术 发光装置和显示器 (Light emitting device and display ) 是由 片冈祐亮 大桥达男 琵琶刚志 大前晓 于 2018-04-26 设计创作，主要内容包括：一种发光装置,该发光装置包括：发光层,该发光层设置在第一面与第二面之间；第一电极,该第一电极设置在第一面上并且电耦合至发光层；第二电极,该第二电极设置在第二面上并且电耦合至发光层；以及非选择电极,该非选择电极设置在第一面上并且处于未电耦合至电位供应源的状态中。(A light emitting device, comprising: a light emitting layer disposed between the first face and the second face; a first electrode disposed on the first face and electrically coupled to the light emitting layer; a second electrode disposed on the second face and electrically coupled to the light emitting layer; and a non-selection electrode provided on the first face and in a state of not being electrically coupled to the potential supply source.)

1. A light emitting device, comprising:

a light emitting layer disposed between the first face and the second face;

a first electrode disposed on the first face and electrically coupled to the light emitting layer;

a second electrode disposed on the second face and electrically coupled to the light emitting layer; and

a non-selection electrode disposed on the first face and in a state of not being electrically coupled to a potential supply source.

2. The light-emitting device according to claim 1, wherein the first electrode and the non-selection electrode are different from each other in electrode area.

3. The light-emitting device according to claim 1, wherein the first electrode and the non-selection electrode are different from each other in a planar shape.

4. The light-emitting device according to claim 1, wherein the first electrode and the non-selective electrode are different from each other in constituent material.

5. The light emitting device of claim 1, further comprising:

a first semiconductor layer between the first electrode and the light emitting layer; and

a second semiconductor layer between the second electrode and the light emitting layer.

6. The light-emitting device according to claim 5, wherein the first electrode and the non-selection electrode are provided in respective regions of the first face that are different from each other.

7. The light-emitting device according to claim 6, wherein a portion overlapping with the first electrode and a portion overlapping with the non-selection electrode are electrically isolated in the light-emitting layer and the first semiconductor layer.

8. The light-emitting device according to claim 1, wherein the first electrode and the non-selection electrode have respective rotationally symmetrical shapes in a plan view.

9. The light-emitting device according to claim 1, wherein a planar shape of one of the first electrode and the non-selection electrode is a quadrangle.

10. The light-emitting device according to claim 9, wherein the other of the first electrode and the non-selection electrode surrounds the quadrangle.

11. The light-emitting device according to claim 1, wherein a planar shape of one of the first electrode and the non-selection electrode is a circular shape.

12. The light emitting device of claim 1, wherein the light emitting layer comprises InGaN.

13. The light emitting device of claim 1, further comprising: a switching device coupled to the first electrode and the non-select electrode,

wherein the switching device is operable to supply an electrical potential to the first electrode.

14. The light-emitting device according to claim 1, wherein the first electrode, the non-selective electrode, or both comprise a plurality of conductive films.

15. A display includes a display panel including a mounting substrate, and a plurality of light emitting devices disposed on the mounting substrate,

the light emitting devices respectively include:

a light emitting layer disposed between the first face and the second face,

a first electrode disposed on the first face and electrically coupled to the light emitting layer,

a second electrode disposed on the second face and electrically coupled to the light emitting layer, an

A non-selection electrode disposed on the first face and in a state of not being electrically coupled to a potential supply source.

16. The display of claim 15, wherein all of the light emitting devices disposed on the mounting substrate include the same shape of the first electrode.

17. The display of claim 15, wherein all of the light emitting devices disposed on the mounting substrate comprise the first electrode comprising the same constituent material.

18. The display of claim 15, wherein a portion of the plurality of light emitting devices disposed on the mounting substrate have a shape of the first electrode different from a shape of the first electrode of another light emitting device.

19. The display of claim 15, wherein the plurality of display panels are placed closely together in a tile pattern.

Technical Field

The present technology relates to a light-emitting device and a display, which are suitable for, for example, a tiled display or the like.

Background

Self-luminous display panels using light emitting devices such as Light Emitting Diodes (LEDs) have been developed (see, for example, patent document 1). It has been proposed to couple a plurality of such self-luminous display panels to provide a tiled display (display).

Reference list

Patent document

Patent document 1: japanese unexamined patent application publication No. 2015-92529

Disclosure of Invention

Such displays are expected to improve image quality.

Therefore, it is desirable to provide a light emitting device and a display capable of improving image quality.

A light emitting device according to an embodiment of the present technology includes: a light emitting layer disposed between the first face and the second face; a first electrode disposed on the first face and electrically coupled to the light emitting layer; a second electrode disposed on the second face and electrically coupled to the light emitting layer; and a non-selection electrode provided on the first face and in a state of not being electrically coupled to the potential supply source.

A display according to one embodiment of the present technology includes a light emitting device according to one embodiment of the present technology.

A light-emitting device and a display according to one embodiment of the present technology each include a plurality of electrically isolated conductive films provided on a first face, and a conductive film (first electrode) to which a potential is supplied is selected in accordance with a state of a light-emitting layer. The conductive film to which no potential is supplied among the plurality of conductive films is a non-selective electrode.

A light-emitting device and a display according to one embodiment of the present technology select a first electrode according to a state of a light-emitting layer, and thus can adjust a wavelength of light emitted from the light-emitting device. This makes it possible to suppress variations between wavelengths of light emitted from the plurality of light emitting devices and improve image quality. It is worth noting that the effects described herein are not necessarily limited, and may be any of the effects described in this disclosure that may be provided.

Drawings

Fig. 1 is an exploded perspective view illustrating a schematic configuration of a display according to an embodiment of the present technology.

Fig. 2 is a perspective view illustrating a schematic configuration of a substrate of the device shown in fig. 1.

Fig. 3 is a perspective view illustrating a schematic configuration of the unit shown in fig. 2.

Fig. 4 is a cross-sectional view illustrating a schematic configuration of the unit shown in fig. 3.

Fig. 5A is a plan view schematically (1) illustrating a schematic configuration of the display panel shown in fig. 3.

Fig. 5B is a plan view schematically (2) illustrating a schematic configuration of the display panel shown in fig. 3.

Fig. 6A is a schematic sectional view illustrating a common configuration between the light emitting devices shown in fig. 5A and 5B.

Fig. 6B is a schematic plan view of a first face of the light emitting device shown in fig. 6A.

Fig. 6C is a schematic plan view of the second face of the light emitting device shown in fig. 6A.

Fig. 7A is a schematic sectional view illustrating the configuration of the light emitting device shown in fig. 5A.

Fig. 7B is a schematic plan view of a first face of the light emitting device shown in fig. 7A.

Fig. 8A is a schematic sectional view illustrating the configuration of the light emitting device shown in fig. 6A.

Fig. 8B is a schematic plan view of a first face of the light emitting device shown in fig. 8A.

Fig. 9 is a perspective view illustrating a schematic configuration of a unit according to a comparative example.

Fig. 10A is a schematic sectional view illustrating a configuration of a light emitting device of the display panel shown in fig. 9.

Fig. 10B is a schematic plan view illustrating a first face of the light emitting device shown in fig. 10A.

Fig. 11 is a schematic plan view illustrating one example of a display state of the unit shown in fig. 9.

Fig. 12 is a schematic plan view illustrating another example of the light emitting device shown in fig. 5A and 5B.

Fig. 13 is a diagram for explaining the wavelength of light emitted by the light emitting device shown in each of fig. 7B, 8B, and 12.

Fig. 14 is a diagram illustrating an example of the relationship between the number of manufactured light emitting devices and the emission wavelength of the manufactured light emitting devices.

Fig. 15A is a schematic sectional view illustrating a configuration of a light emitting device according to modified example 1.

Fig. 15B is a schematic plan view of a first face of the light-emitting device shown in fig. 15A.

Fig. 16A is a schematic sectional view illustrating a configuration of a light emitting device according to modified example 2.

Fig. 16B is a schematic plan view of a first face of the light-emitting device shown in fig. 16A.

Fig. 17A is a schematic sectional view illustrating a configuration of a light emitting device according to modified example 3.

Fig. 17B is a schematic plan view of a first face of the light-emitting device shown in fig. 17A.

Fig. 18 is a schematic plan view illustrating another example of the configuration of the light emitting device shown in fig. 17B.

Fig. 19 is a schematic plan view illustrating a configuration of a light emitting device according to a modified example 4.

Fig. 20 is a schematic plan view illustrating a configuration of a display panel according to a modified example 5.

Fig. 21 is a diagram illustrating a configuration of an electronic apparatus (television apparatus) according to an application example.

Fig. 22 is a schematic plan view illustrating another example (1) of the configuration of the light-emitting device shown in fig. 6B.

Fig. 23 is a schematic plan view illustrating another example (2) of the configuration of the light-emitting device shown in fig. 6B.

Detailed Description

Embodiments of the present technology will be described in detail below with reference to the accompanying drawings. In this regard, the embodiments will be described in the following order.

1. Example (display including light emitting device including non-selection electrode)

2. Modified example 1 (example of light emitting device coupled to switching device)

3. Modified example 2 (example of light-emitting device with groove)

4. Modified example 3 (example of light-emitting device in which first electrode or non-selective electrode includes a plurality of conductive films)

5. Modified example 4 (example of light-emitting device in which planar shape of first electrode or non-selective electrode is circular)

6. Modified example 5 (example of display panel including light-emitting device in which conductive film a is used as a first electrode and light-emitting device in which conductive film B is used as a first electrode)

< example >

Fig. 1 schematically illustrates an overall configuration of a display (display 1) according to an embodiment of the present technology. The display 1 includes: for example, a device substrate 1A, a counter substrate 1B opposed to the device substrate 1A, and a control circuit 1C for driving the device substrate 1A. For example, the surface of the counter substrate 1B (the opposite surface to the surface opposite to the device substrate 1A) is an image display surface. The middle of the image display surface is a display area, and a portion surrounding the display area is a non-display area. The opposite substrate 1B is configured to allow transmission of light having a wavelength in the visible range. The opposite substrate 1B includes, for example, a light-transmitting material such as a glass substrate, a transparent resin substrate, or a transparent resin film.

Fig. 2 schematically illustrates one example of the configuration of the device substrate 1A shown in fig. 1. The display 1 is a so-called tiled display. The device substrate 1A includes a plurality of units (units U) closely placed in a tile pattern. As an example, fig. 2 illustrates a case where the device substrate 1A includes nine units U. However, the number of units U may be ten or more or may be eight or less.

Fig. 3 schematically illustrates one example of the configuration of the unit U. The unit U includes, for example, a plurality of display panels ( display panels 10A and 10B) closely placed in a tile pattern, and a support substrate (support substrate 20) of these display panels 10A and 10B. The opposite surface of the display surface of each of the display panels 10A and 10B is opposed to the support substrate 20. The support substrate 20 includes, for example, a metal plate.

Fig. 4 schematically illustrates one example of a configuration between the display panels 10A and 10B and the support substrate 20. The display panels 10A and 10B are fixed to the support substrate 20 by, for example, a fixing member (fixing member 30).

Fig. 5A illustrates a schematic planar configuration of the display panel 10A, and fig. 5B illustrates a schematic planar configuration of the display panel 10B. The display panel 10A includes a plurality of light-emitting devices (light-emitting devices 12A) on a mounting substrate (mounting substrate 11). The display panel 10B includes a plurality of light-emitting devices (light-emitting devices 12B) on the mounting substrate 11. The respective light emitting devices 12A and 12B in the respective display panels 10A and 10B are coupled to a driving circuit.

Fig. 6A to 6C schematically illustrate a common configuration between the light-emitting device 12A and the light-emitting device 12B. Fig. 6A illustrates a sectional configuration of the light emitting devices 12A and 12B. Fig. 6B illustrates a planar configuration of one face (described below as the first face S1) of each of the light-emitting devices 12A and 12B, and fig. 6C illustrates a planar configuration of the other face (described below as the second face S2) of each of the light-emitting devices 12A and 12B. The light emitting devices 12A and 12B respectively include, for example, a first face (first face S1) and a second face (second face S2) opposed to each other, and include, in order from a position close to the first face S1, a first semiconductor layer 122, a light emitting layer 123, and a second semiconductor layer 124 between these first and second faces. The first surface S1 and the second surface S2 are, for example, square. The shape of the first face S1 and the shape of the second face S2 may be different. The first face S1 of each of the light emitting devices 12A and 12B includes a conductive film a121A and a conductive film B121B, and the second face S2 includes a second electrode 125. As described below, any one of the conductive film a121A and the conductive film B121B serves as a first electrode of each of the light-emitting devices 12A and 12B. Light (light LA and LB in fig. 7A and 8A described below) is extracted from, for example, the second face S2 in the light-emitting devices 12A and 12B. Light may also be extracted from the first surface S1. The light emitting devices 12A and 12B emit light in, for example, a blue wavelength range or light in a green wavelength range. The display panels 10A and 10B include light emitting devices that emit light in a red wavelength range together with the light emitting devices 12A and 12B, respectively.

The conductive film a121A and the conductive film B121B are provided in regions of the first face S1 that are different from each other, and are electrically isolated. The conductive film a121A and the conductive film B121B differ in one or more of shape (including size), electrode area, constituent material, and the like. The current density of the current flowing through the conductive film a121A is different from the current density of the current flowing through the conductive film B121B. The conductive film a121A and the conductive film B121B preferably have a planar shape with rotational symmetry. The center of symmetry is preferably located at the center of the first face S1. This enables to improve light distribution characteristics. The conductive film a121A is provided, for example, in the middle of the first face S1. The planar shape of the conductive film a121A is a square (fig. 6B). The planar shape of the conductive film B121B is, for example, a frame-like square surrounding the periphery of the conductive film a 121A. That is, for example, the conductive film a121A and the conductive film B121B have a four-fold symmetrical planar shape. The conductive film a121A and the conductive film B121B may have a quadrangular planar shape such as a rectangle. For example, the electrode area of the conductive film B121B is larger than that of the conductive film a 121A. The current density of the current flowing through the conductive film B121B is smaller than that of the current flowing through the conductive film a 121A.

Fig. 7A and 7B schematically illustrate the configuration of the light-emitting device 12A, and fig. 8A and 8B schematically illustrate the configuration of the light-emitting device 12B. Fig. 7A and 8A illustrate the sectional configurations of the light emitting devices 12A and 12B, respectively, and fig. 7B and 8B illustrate the planar configurations of the first faces S1 of the light emitting devices 12A and 12B, respectively. The conductive film a121A in the light-emitting device 12A is coupled to a wiring (wiring 126) for supplying a potential. That is, the conductive film a121A is electrically coupled to the light-emitting layer 123 via the first semiconductor layer 122 and functions as a first electrode. In this case, the conductive film B121B does not receive supply of a potential, and the conductive film B121B is a non-selection electrode. That is, the conductive film B121B is in a state of not being coupled to a potential supply source. When a predetermined voltage is applied between the conductive film a121A and the second electrode 125, the light-emitting layer 123 of the light-emitting device 12A generates light LA. The conductive film B121B in the light-emitting device 12B is coupled to the wiring 126. That is, the conductive film B121B is electrically coupled to the light-emitting layer 123 via the first semiconductor layer 122 and functions as a first electrode. In this case, the conductive film a121A does not receive supply of a potential, and the conductive film a121A is a non-selection electrode. That is, the conductive film a121A is in a state of not being coupled to a potential supply source. In the case where a predetermined voltage is applied between the conductive film B121B and the second electrode 125, the current density becomes lower than that of the light-emitting device 12A (the conductive film a121A), and therefore the light-emitting layer 123 of the light-emitting device 12B generates light LB having a wavelength longer than that of the light LA. Therefore, the light-emitting device 12A and the light-emitting device 12B differ in the conductive film (the conductive film a121A and the conductive film B121B) serving as the first electrode.

As described in detail below, according to the present embodiment, a plurality of electrically isolated conductive films (the conductive film a121A and the conductive film B121B) are provided on the first face S1 in this manner. This enables selection of the conductive film to be used as the first electrode. This enables adjustment of the wavelength of the light (light LA and light LB) generated in the light emitting layer 123.

As an example, fig. 3 illustrates a case where one unit U includes the display panel 10A (light-emitting device 12A) and the display panel 10B (light-emitting device 12B). However, one unit U may include only the display panel 10A or only the display panel 10B.

The conductive film a121A and the conductive film B121B are provided in contact with the first semiconductor layer 122. The conductive film a121A and the conductive film B121B include, for example, a conductive metal material. The conductive metal material is: for example, titanium (Ti), platinum (Pt), gold (Au), etc. For example, a titanium (Ti)/platinum (Pt)/gold (Au) laminated film can be used for the conductive film a121A and the conductive film B121B. The conductive film a121A and the conductive film B121B may include, for example, a conductive oxide such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). For example, a laminated film of ITO/IZO can be used for the conductive film a121A and the conductive film B121B. The conductive film a121A and the conductive film B121B may be formed as a single film. The constituent material of the conductive film a121A and the constituent material of the conductive film B121B may be different. The display panel 10A includes a first electrode (conductive film a121A) in which all the light-emitting devices 12A have the same shape and the same constituent material. The display panel 10B includes a first electrode (conductive film B121B) in which all the light-emitting devices 12A have the same shape and the same constituent material. Therefore, all the light emitting devices 12A in the display panel 10A simultaneously perform the process of coupling the conductive film a121A and the wiring 126. All the light emitting devices 12B in the display panel 10B simultaneously perform the process of coupling the conductive film B121B and the wiring 126.

The first semiconductor layer 122 provided to each of the light emitting devices 12A and 12B includes, for example, a p-type InGaN-based semiconductor material. For example, p-type GaN can be used for the first semiconductor layer 122. The first semiconductor layer 122 coupled to the conductive film a121A and the conductive film B121B preferably has high resistance. For example, by using the first semiconductor layer 122 such as p-type GaN having a high resistance value, diffusion of current flowing from the conductive films a121A and B121B to the light-emitting layer 123 can be suppressed. The planar shape of the first semiconductor layer 122 is, for example, a square, and a surface of the first semiconductor layer 122 (an opposite surface to a surface opposite to the second semiconductor layer 124) provides the first surface S1.

The light emitting layer 123 between the first semiconductor layer 122 and the second semiconductor layer 124 includes, for example, an InGaN-based semiconductor material. For example, InGaN can be used for the light emitting layer 123.

The second semiconductor layer 124 is opposite to the first semiconductor layer 122 with the light emitting layer 123 interposed therebetween. The second semiconductor layer 124 includes, for example, an n-type InGaN-based semiconductor material. For example, n-type GaN can be used for the second semiconductor layer 124. The planar shape of the second semiconductor layer 124 is, for example, a square, and the surface of the second semiconductor layer 124 provides the second face S2.

The second electrode 125 is disposed in contact with the second semiconductor layer 124, and is electrically coupled to the light emitting layer 123 via the second semiconductor layer 124. The second electrode 125 is disposed, for example, in the middle of the second face S2, and has a quadrangular planar shape. The second electrode 125 includes, for example, a conductive metal material or an oxide, as with the conductive film a121A and the conductive film B121B. For example, a laminated film of titanium (Ti)/platinum (Pt)/gold (Au) can be used for the second electrode 125. The second electrode 125 may be provided as a single film.

In the case where a predetermined voltage is applied between the conductive film a121A or the conductive film B121B and the second electrode 125 in these light-emitting devices 12A and 12B, electrons and holes are injected into the light-emitting layer 123 from the side of the second electrode 125 and the side of the conductive film a121A or the conductive film B121B, respectively. The recombination of the electrons and holes injected into the light emitting layer 123 generates photons as emitted light (light LA and light LB), and is extracted from the second face S2. In this regard, the light-emitting devices 12A and 12B include a plurality of conductive films (a conductive film a121A and a conductive film B121B). This enables selection of a conductive film serving as a first electrode according to the state of the light-emitting layer 123. That is, by selecting either one of the conductive film a121A and the conductive film B121B having different current densities, the wavelengths of the light LA and LB emitted from the light-emitting devices 12A and 12B can be adjusted. Therefore, it is possible to select the display panel 10A or the display panel 10B, and suppress generation of a visual boundary between the plurality of display panels 10A and 10B. This will be described in detail below.

Fig. 9 illustrates a schematic configuration of a unit (unit U100) according to a comparative example. The unit U100 includes a plurality of display panels (display panels 100) closely placed in a tile pattern. The same configuration is adopted for all the display panels 100. A plurality of display panels 100 are disposed on the support substrate 20.

Fig. 10A and 10B schematically illustrate the configuration of a light-emitting device (light-emitting device 120) included in the display panel 100. Fig. 10A illustrates a sectional configuration of the light emitting device 120, and fig. 10B illustrates a planar configuration of the first face S1 of the light emitting device 120. A single conductive film (conductive film 1121) is provided on the first surface S1 of the light-emitting device 120. In this regard, the light emitting device 120 is different from the light emitting devices 12A and 12B. Only the conductive film 1121 functions as a first electrode, and thus the light-emitting device 120 cannot change the current density. Therefore, the state of the light-emitting layer 123 is likely to cause a large variation in the wavelength of light emitted from the light-emitting device 120 (light L100 and light L101 in fig. 11 described below). The light emitting device 120 in which the light emitting layer 123 includes an InGaN-based semiconductor material is particularly difficult to uniformly grow semiconductor layers (e.g., the first semiconductor layer 122, the light emitting layer 123, and the second semiconductor layer 124), and a variation in wavelength of light emitted from the light emitting device 120 tends to become large.

Fig. 11 schematically illustrates a display state of the unit U100. In the case where one of the adjacent display panels 100 emits light L100 and the other emits light L101 having a wavelength different from that of the light L100, a difference in wavelength between the light L100 and the light L101 causes a difference in visual level. This difference in visual level results in a visual boundary between adjacent display panels 100 and greatly reduces image quality.

A method of selecting and using the light emitting device 120 according to the emission wavelength may also be considered. For example, as an alternative method, there is a bin classification (bin classification). However, selecting and using the light emitting device 120 increases the number of processes, and further, the light emitting device 120 that cannot be used is discarded. Therefore, the cost increases.

In contrast to this, the display 1 includes a plurality of conductive films (the conductive film a121A and the conductive film B121B) on the first face S1 of the light emitting devices 12A and 12B, and thus the conductive film serving as the first electrode can be selected according to the state of the light emitting layer 123. A current with higher current density is injected into the light-emitting device 12A so that the conductive film a121A functions as the light-emitting layer 123 of the first electrode. A current with a lower current density is injected into the light-emitting device 12B so that the conductive film B121B functions as the light-emitting layer 123 of the first electrode. Therefore, it is possible to change the current density according to the state of the light emitting layer 123, and to make variations in the wavelengths of the light LA and the light LB emitted between the plurality of light emitting devices 12A and 12B ( display panels 10A and 10B) fall within a predetermined range.

As shown in fig. 12, the display 1 may include a light-emitting device (light-emitting device 12C) in which both the conductive film a121A and the conductive film B121B function as first electrodes. The wiring 126 in the light emitting device 12C is coupled to the conductive film a121A and the conductive film B121B, and the conductive film a121A and the conductive film B121B receive supply of electric potential. The current density of a current flowing through both the conductive film a121A and the conductive film B121B is lower than the current density of a current flowing through one of the conductive film a121A and the conductive film B121B. Therefore, by using the light-emitting device 12C in combination with the light-emitting devices 12A and 12B, the current density can be changed in a wider range.

Fig. 13 illustrates a relationship between the current density and the dominant wavelength of the light-emitting devices 12A, 12B, and 12C. The current density of the current injected from the first electrode (the conductive film a121A) in the light-emitting device 12A is about 1.5 times that of the light-emitting device 12B (the conductive film B121B). The wavelength of the light LA emitted from the light emitting device 12A becomes shorter than the wavelength of the light LB emitted from the light emitting device 12B by about 2 nm. Therefore, by using one of the conductive film a121A and the conductive film B121B as a first electrode, it is possible to change the current density and adjust the wavelengths of the light LA and LB. Therefore, it is possible to make the variations in the wavelengths of the light LA and the light LB fall within a predetermined range, and suppress the generation of the visual boundary between the plurality of display panels 10A and 10B.

Further, by adjusting the wavelengths of the light LA and the light LB, the number of the light-emitting devices 12A and 12B that satisfy the criteria of the emission wavelengths can be increased. Therefore, the manufacturing cost can be reduced.

Fig. 14 illustrates a relationship between the wavelength of light emitted from the manufactured light emitting devices and the number of the manufactured light emitting devices. As described above, using a light-emitting device whose emission wavelength range after manufacture is a range RS on the shorter wavelength side than the acceptable range R and a light-emitting device whose emission wavelength range after manufacture is a range RL on the longer wavelength side than the acceptable range R greatly reduces the image quality. Further, in the case where only the light emitting device within the acceptable range R is selected, the number of processes increases, and the cost increases. In contrast, by selecting which of the conductive film a121A and the conductive film B121B is used as the first electrode, the emission wavelength of the light-emitting device in the range RS and the range RL can be made to fall within the acceptable range R. Therefore, the display 1 can suppress the cost. Further, even if the light emitting device selection process is added, it is possible to set a higher criterion and thus further improve the image quality.

As described above, according to the present embodiment, the first electrode is selected from the conductive film a121A and the conductive film B121B according to the state of the light-emitting layer 123. This enables the wavelength of the lights LA and LB emitted from the light emitting devices 12A and 12B to be adjusted. Therefore, it is possible to suppress variations in the wavelengths of the light LA and the light LB emitted from the plurality of light emitting devices 12A and 12B, and to improve the image quality.

Further, the conductive film a121A and the conductive film B121B have rotationally symmetric planar shapes. This enables to improve light distribution characteristics.

Further, the same conductive film a121A (or conductive film B121B) in all the light emitting devices 12A (or light emitting devices 12B) in the display panel 10A (or display panel 10B) is coupled to the wiring 126. This enables the coupling process of the conductive film a121A to be performed simultaneously in all the light emitting devices 12A (or the light emitting devices 12B). Therefore, the display 1 can be easily manufactured.

Modified examples of the above-described embodiments will be described below, and in the following description, the same components as those in the above-described embodiments will be assigned the same reference numerals, and descriptions thereof will be omitted as appropriate.

< modified example 1>

Fig. 15A and 15B schematically illustrate the configuration of light emitting devices 12A and 12B according to modified example 1 of the above-described embodiment. Fig. 15A illustrates a sectional configuration of the light emitting devices 12A and 12B, and

fig. 15B illustrates a planar configuration of the light emitting devices 12A and 12B. The conductive film a121A and the conductive film B121B may be coupled to the switching device (switching device SW) in this manner. Except for this point, the light emitting devices 12A and 12B according to modified example 1 have a configuration and an effect similar to those of the light emitting devices 12A and 12B according to the above-described embodiment.

The wiring 126 is coupled to the conductive film a121A and the conductive film B121B. The switching device SW performs switching to select the conductive film a121A and the conductive film B121B to which potentials are to be applied. That is, the switching device SW performs switching to select the conductive film a121A or the conductive film B121B serving as the first electrode.

< modified example 2>

Fig. 16A and 16B schematically illustrate the configuration of light emitting devices 12A and 12B according to modified example 2 of the above-described embodiment. Fig. 16A illustrates a sectional configuration of the light emitting devices 12A and 12B, and

fig. 16B illustrates a planar configuration of the light-emitting devices 12A and 12B. Therefore, a portion of the semiconductor layer (the first semiconductor layer 122A and the light-emitting layer 123A) which overlaps with the conductive film a121A in a plan view can be separated from a portion of the semiconductor layer (the first semiconductor layer 122B) and the light-emitting layer 123B) which overlaps with the conductive film B121B. Except for this point, the light emitting devices 12A and 12B according to modified example 2 have a configuration and an effect similar to those of the light emitting devices 12A and 12B according to the above-described embodiment.

The light emitting devices 12A and 12B have grooves (grooves G) provided perpendicularly from the first face S1. The trench G is provided between the conductive film a121A and the conductive film B121B, and has a quadrangular shape in plan view. The trench G penetrates the first semiconductor layer 122 and the light-emitting layer 123 in the thickness direction from the first face S1, and extends to, for example, a part of the second semiconductor layer 124. By providing such a groove G, a portion of the first semiconductor layer 122A and the light-emitting layer 123A which overlaps with the conductive film a121A in a plan view is electrically isolated from a portion of the first semiconductor layer 122B and the light-emitting layer 123B which overlaps with the conductive film B121B.

Current is injected from the conductive film a121A to the light-emitting layer 123A via the first semiconductor layer 122A in the light-emitting device 12A having the groove G. Current is injected from the conductive film B121B to the light-emitting layer 123B via the first semiconductor layer 122B in the light-emitting device 12B having the groove G. By providing the trench G, the first semiconductor layer 122A is electrically isolated from the first semiconductor layer 122B. This makes it possible to suppress diffusion of current from the conductive film a121A and the conductive film B121B to the light-emitting layers 123A and 123B. Therefore, the first semiconductor layer 122 having a low resistance value can be used.

As in the present modified example, the semiconductor layer may be electrically isolated at a portion overlapping with the conductive film a121A and a portion overlapping with the conductive film B121B in a plan view. In this case, the same effects as those of the above-described embodiment can be obtained. Further, it is possible to suppress diffusion of current from the conductive film a121A and the conductive film B121B to the light-emitting layers 123A and 123B, and thus the first semiconductor layer 122 of a lower resistance value is used.

< modified example 3>

Fig. 17A and 17B schematically illustrate the configuration of a light-emitting device 12A according to modified example 3 of the above-described embodiment. Fig. 17A illustrates a sectional configuration of the light-emitting device 12A, and fig. 17B illustrates a planar configuration of the light-emitting device 12A. Therefore, the first face S1 of the light emitting device 12A may be provided with three or more electrically isolated conductive films (the conductive film a121A, the conductive film B121B, and the conductive film C121C). Except for this point, the light-emitting device 12A according to modified example 3 has a configuration and an effect similar to those of the light-emitting device 12A according to the above-described embodiment.

The light-emitting device 12A includes a conductive film a121A in the middle of the first surface S1, and includes a frame-shaped conductive film B121B and a conductive film C121C in this order around the conductive film a 121A. In other words, the conductive film a121A, the conductive film B121B, and the conductive film C121C are provided in this order from the inside of the first surface. In this case, the current density of the current flowing to the light-emitting layer 123 via the conductive film a121A, the conductive film B121B, and the conductive film C121C is highest in the conductive film a121A, and becomes smaller in the order of the conductive film B121B and the conductive film C121C. Therefore, by increasing the number of conductive films provided on the first face S1, the magnitude of the current density can be changed in a finer manner. The conductive film a121A in the light-emitting device 12A is coupled to the wiring 126, and the conductive film a121A serves as a first electrode. In this case, one or more conductive films (the conductive film B121B and the conductive film C121C) are non-selection electrodes.

The wiring 126 may be coupled to the conductive film B121B among the conductive film a121A, the conductive film B121B, and the conductive film C121C to provide the light-emitting device 12B. Alternatively, the wiring 126 may be coupled to the conductive film C121C among the conductive film a121A, the conductive film B121B, and the conductive film C121C to provide a light-emitting device.

In addition to the light emitting devices 12A and 12B described in the above-described embodiments, a light emitting device (light emitting device 12D) provided by coupling the wiring 126 to two of the conductive film a121A, the conductive film B121B, and the conductive film C121C may also be used.

Fig. 18 illustrates one example of a schematic planar configuration of the light-emitting device 12D. For example, the conductive film a121A and the conductive film B121B in the light-emitting device 12D are coupled to the wiring 126, and receive supply of a potential. That is, the conductive film a121A and the conductive film B121B function as first electrodes, and the conductive film C121 is a non-selection electrode. The conductive film a121A and the conductive film C121 may function as a first electrode, or the conductive film B121B and the conductive film C121 may function as a first electrode. Therefore, two or more conductive films (the conductive film a121A, the conductive film B121B, and the conductive film C121C) can be used as the first electrode.

As in the present modified example, the first face S1 of the light emitting device 12A may be provided with three or more electrically isolated conductive films (the conductive film a121A, the conductive film B121B, and the conductive film C121C). In this case, the same effects as those of the above-described embodiment can be obtained. Further, by providing the conductive film C121C other than the conductive film a121A and the conductive film B121B, finer adjustment of the magnitude of the current density can be performed.

< modified example 4>

Fig. 19 schematically illustrates a planar configuration of a light-emitting device 12A according to modified example 4 of the above-described embodiment. Therefore, the planar shapes of the conductive film a121A and the conductive film B121B may be circular. Except for this point, the light-emitting device 12A according to modified example 4 has a configuration and an effect similar to those of the light-emitting device 12A according to the above-described embodiment.

The conductive film a121A is provided, for example, in the middle of the first face S1. The planar shape of the conductive film a121A is circular. The planar shape of the conductive film B121B is, for example, a frame-like circle surrounding the periphery of the conductive film a 121A. The centers of the conductive film a121A and the conductive film B121B are disposed, for example, at the center of the first face S1 in plan view. That is, the conductive film a121A and the conductive film B121B have high symmetry. This enables higher light distribution characteristics to be obtained. For example, the electrode area of the conductive film B121B is larger than that of the conductive film a 121A. The current density of the current flowing through the conductive film B121B is smaller than that of the current flowing through the conductive film a 121A.

As in the present modified example, the planar shapes of the conductive film a121A and the conductive film B121B may be circular. In this case, the same effects as those of the above-described embodiment can be obtained. Further, by enhancing the symmetry of the planar shapes of the conductive film a121A and the conductive film B121B, the light distribution characteristics can be further enhanced.

< modified example 5>

Fig. 20 schematically illustrates a planar configuration of a display panel (display panel 10C) according to modified example 5 of the above-described embodiment. The display panel 10C includes both the light-emitting device 12A and the light-emitting device 12B. Therefore, the light-emitting devices 12A and 12B can be provided in one display panel 10C in a mixed manner. The display panel 10C may include a light emitting device 12C (fig. 12) or a light emitting device 12D (fig. 18). Therefore, the shape or constituent material of the first electrode (the conductive film a121A) of a part of the light-emitting devices (for example, the light-emitting device 12A) provided in the display panel 10C may be different from the shape or constituent material of the first electrode (the conductive film B121B) of the other light-emitting devices (for example, the light-emitting device 12B). In this case, the same effects as those of the above-described embodiment can be obtained.

< application example >

The display 1 described in the above-described embodiment and the like is applicable to electronic apparatuses (such as a television apparatus, a digital camera, a laptop personal computer, a mobile terminal apparatus such as a mobile phone, or a video camera) of various fields that display an image signal input from the outside or an image signal generated inside as an image or a video image. One of these examples will be described below.

Fig. 21 illustrates the appearance of a television apparatus to which the display 1 according to the above-described embodiment is applied. The television apparatus includes, for example, an image display screen 300, and the image display screen 300 includes a front panel 310 and a filter lens 320. The above-described display 1 is used for the image display screen 300.

The present technology has been described above with reference to the embodiment and the modified examples. However, the present technology is not limited to the embodiments and the like, and various modifications can be made. For example, the material and thickness of each portion described in the above-described embodiments and the like are not limited thereto, and may be other materials and other thicknesses.

Further, the arrangement of the conductive film a121A and the conductive film B121B on the first face S1 is not limited to the arrangement illustrated in fig. 6B and other drawings. For example, as shown in fig. 22, each side of the first face S1 and each vertex of the conductive film a121A and the conductive film B121B may be opposed in a plan view.

Further, the planar shape of the conductive film B121B may not be a frame shape. For example, as shown in fig. 23, the conductive film a121A may be provided between a plurality of conductive films B121B (two conductive films B121B in fig. 23).

Further, the light emitting devices 12A, 12B, 12C, and 12D may be light emitting devices that emit light in, for example, a red wavelength range.

Further, the display 1 may include one display panel ( display panel 10A, 10B, or 10C).

It is to be noted that the effects disclosed in the present specification are merely examples and are not restrictive, and further, other effects may be provided.

Note that the present technology can also adopt the following configuration.

(1)

A light emitting device, comprising:

a light emitting layer disposed between the first face and the second face;

a first electrode disposed on the first face and electrically coupled to the light emitting layer;

a second electrode disposed on the second face and electrically coupled to the light emitting layer; and

a non-selection electrode disposed on the first face and in a state of not being electrically coupled to the potential supply source.

(2)

The light-emitting device according to (1), wherein the first electrode and the non-selection electrode are different from each other in electrode area.

(3)

The light-emitting device according to (1), wherein the first electrode and the non-selection electrode are different from each other in planar shape.

(4)

The light-emitting device according to (1), wherein the first electrode and the non-selective electrode are different from each other in constituent material.

(5)

The light-emitting device according to any one of (1) to (4), further comprising:

a first semiconductor layer between the first electrode and the light emitting layer; and

a second semiconductor layer between the second electrode and the light emitting layer.

(6)

The light-emitting device according to (5), wherein the first electrode and the non-selection electrode are provided in respective regions of the first face that are different from each other.

(7)

The light-emitting device according to (6), wherein in the light-emitting layer and the first semiconductor layer, a portion overlapping with the first electrode and a portion overlapping with the non-selection electrode are electrically isolated.

(8)

The light-emitting device according to any one of (1) to (7), wherein the first electrode and the non-selection electrode have respective rotationally symmetrical shapes in a plan view.

(9)

The light-emitting device according to any one of (1) to (8), wherein a planar shape of one of the first electrode and the non-selection electrode is a quadrangle.

(10)

The light-emitting device according to (9), wherein the other of the first electrode and the non-selection electrode surrounds a quadrangle.

(11)

The light-emitting device according to any one of (1) to (8), wherein a planar shape of one of the first electrode and the non-selection electrode is a circular shape.

(12)

The light-emitting device according to any one of (1) to (11), wherein the light-emitting layer comprises InGaN.

(13)

The light-emitting device according to any one of (1) to (12), further comprising: a switching device coupled to the first electrode and the non-select electrode,

wherein the switching means is operable to supply an electrical potential to the first electrode.

(14)

The light-emitting device according to any one of (1) to (13), wherein the first electrode, the non-selective electrode, or both include a plurality of conductive films.

(15)

A display includes a display panel including a mounting substrate, and a plurality of light emitting devices disposed on the mounting substrate,

the light emitting devices respectively include:

a light emitting layer disposed between the first face and the second face,

a first electrode disposed on the first face and electrically coupled to the light emitting layer,

a second electrode disposed on the second face and electrically coupled to the light-emitting layer, an

A non-selection electrode disposed on the first face and in a state of not being electrically coupled to the potential supply source.

(16)

The display according to (15), wherein all of the light emitting devices provided on the mounting substrate include the same shaped first electrode.

(17)

The display according to (15), wherein all of the light emitting devices provided on the mounting substrate include the first electrode including the same constituent material.

(18)

The display according to (15), wherein a part of the plurality of light emitting devices provided on the mounting substrate has a shape of the first electrode different from a shape of the first electrode of another light emitting device.

(19)

The display according to any one of (15) to (18), wherein the plurality of display panels are closely placed in a tile pattern.

This application is based on and claims priority from japanese patent application No. 2017-111525 filed by 6/2017 at the japan patent office, the entire contents of which are incorporated herein by reference.

It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they come within the scope of the appended claims or the equivalents thereof.