阅读说明：本技术 氮化物半导体元件和氮化物半导体元件的制造方法 (Nitride semiconductor element and method for manufacturing nitride semiconductor element ) 是由 和田贡 希利尔·贝诺 于 2018-10-31 设计创作，主要内容包括：一种氮化物半导体发光元件(1),包含：AlN层(22),其具有规定范围内的晶体质量；以及n型AlGaN,其形成在上述AlN层(22)上,具有规定的Al组分比。另外,AlN层(22)具有与针对(10-12)面的X射线摇摆曲线的半值宽度为350～520(arcsec)相应的晶体质量作为规定范围内的晶体质量,n型AlGaN具有40％～70％的Al组分比作为规定的Al组分比。(A nitride semiconductor light-emitting element (1) comprising: an AlN layer (22) having a crystal quality within a prescribed range; and n-type AlGaN formed on the AlN layer (22) and having a predetermined Al composition ratio. The AlN layer (22) has a crystal mass within a predetermined range corresponding to a half-value width of an X-ray rocking curve for the (10-12) plane of 350 to 520(arcsec), and the n-type AlGaN has an Al composition ratio of 40 to 70% as a predetermined Al composition ratio.)

1. A nitride semiconductor device, comprising:

an AlN layer having a crystal quality within a prescribed range; and

and n-type AlGaN formed on the AlN layer and having a predetermined Al composition ratio.

2. The nitride semiconductor element according to claim 1,

the AlN layer has a crystal mass corresponding to a half-value width of an X-ray rocking curve for the (10-12) plane of 350 to 520(arcsec) as a crystal mass within the predetermined range,

the n-type AlGaN has an Al composition ratio of 40% to 70% as the predetermined Al composition ratio.

3. The nitride semiconductor element according to claim 2,

the AlN layer has a crystal mass corresponding to a half-value width of an X-ray rocking curve for the (10-12) plane of 380 to 520(arcsec) as a crystal mass within the predetermined range,

the n-type AlGaN has an Al composition ratio of 40% to 60% as the predetermined Al composition ratio.

4. The nitride semiconductor element according to claim 3,

the AlN layer has a crystal mass corresponding to a half-value width of an X-ray rocking curve for the (10-12) plane of 410 to 490(arcsec) as a crystal mass within the predetermined range,

the n-type AlGaN has an Al composition ratio of 40% to 50% as the predetermined Al composition ratio.

5. A method for manufacturing a nitride semiconductor device, comprising:

a step of forming an AlN layer having a crystal quality within a predetermined range; and

and forming n-type AlGaN on the AlN layer and having a predetermined Al composition ratio.

6. The method for manufacturing a nitride semiconductor device according to claim 5,

the step of forming the AlN layer having a crystal quality within the predetermined range includes at least 1 or more of a step of changing the growth temperature, a step of changing the amount of Ga doping, and a step of changing the film thickness of the AlN layer.

Technical Field

The present invention relates to a nitride semiconductor element and a method for manufacturing the nitride semiconductor element.

Background

In recent years, nitride semiconductor elements such as transistors and light emitting diodes have been provided, and development of nitride semiconductor elements with improved crystal quality has been advanced (see patent document 1).

Disclosure of Invention

Problems to be solved by the invention

The nitride semiconductor device described in patent document 1 includes: a single crystal substrate; an AlN layer formed on one surface of the single crystal substrate; a first nitride semiconductor layer of a first conductivity type formed on the AlN layer; a light-emitting layer which is formed on the first nitride semiconductor layer on the side opposite to the AlN layer side and which includes an AlGaN-based material; and a second nitride semiconductor layer of a second conductivity type formed on a side of the light-emitting layer opposite to the first nitride semiconductor layer side, wherein the nitride semiconductor element is configured such that a density of N-polar AlN crystals in the AlN layer is 1000/cm²Hereinafter, the half-value width of the X-ray rocking curve of the AlN layer obtained by ω -scanning of X-ray diffraction with respect to the AlN (10-12) plane is 500arc seconds (arcsec) or less. In the nitride semiconductor device described in patent document 1, the reliability of the electrical characteristics of the nitride semiconductor device is improved by improving the crystal quality of the AlN layer.

However, the present inventors have obtained the following knowledge: in a nitride semiconductor device in which n-type AlGaN is formed as a first nitride semiconductor layer on an AlN layer, even if the crystal quality of the AlN layer is improved, the crystal quality of n-type AlGaN as the first nitride semiconductor layer is not necessarily improved; and the AlN layer can improve the crystal quality of the n-type AlGaN when the crystal quality is within a predetermined range.

Accordingly, an object of the present invention is to provide a nitride semiconductor element including n-type AlGaN formed on an AlN layer having crystal quality within a predetermined range in order to improve the crystal quality of the n-type AlGaN, and a method for manufacturing the nitride semiconductor element.

Means for solving the problems

The nitride semiconductor device according to one embodiment of the present invention includes: an AlN layer having a crystal quality within a prescribed range; and n-type AlGaN formed on the AlN layer and having a predetermined Al composition ratio.

In addition, a method for manufacturing a nitride semiconductor device according to another embodiment of the present invention includes: a step of forming an AlN layer having a crystal quality within a predetermined range; and forming n-type AlGaN on the AlN layer and having a predetermined Al composition ratio.

Effects of the invention

According to one embodiment of the present invention, it is possible to provide a nitride semiconductor element including n-type AlGaN formed on an AlN layer having crystal quality within a predetermined range in order to improve the crystal quality of the n-type AlGaN, and a method for manufacturing the nitride semiconductor element.

Drawings

Fig. 1 is a longitudinal sectional view schematically showing the structure of a nitride semiconductor device according to an embodiment of the present invention.

Fig. 2 is a graph showing data of the n-AlGaN mixture value and the light emission output of the semiconductor element.

Fig. 3 is a graph showing the relationship between the n-AlGaN mixed value and the light emission output of the semiconductor element shown in fig. 2.

Fig. 4 is a graph showing data of AlN mixture values and n-AlGaN mixture values.

Fig. 5 is a graph showing the correlation between the AlN mixture value and the n-AlGaN mixture value shown in fig. 4.

Detailed Description