阅读说明：本技术 发光芯片处理方法、发光芯片组件、显示装置及发光装置 (Light emitting chip processing method, light emitting chip assembly, display device and light emitting device ) 是由 刘召军 张珂 于 2021-09-08 设计创作，主要内容包括：本公开提供了一种发光芯片处理方法、发光芯片组件、显示装置及发光装置。所述发光芯片处理方法包括：在所述发光芯片的用于出射光的半导体层的整个表面上进行光刻,显露出所述半导体层的出光表面；对光刻后剩余的光刻胶进行刻蚀,以在所述出光表面上形成颗粒；对带有颗粒的所述出光表面进行刻蚀,以将所述出光表面刻蚀成粗糙表面。根据本公开的技术方案,可以使发光芯片形成粗糙表面,降低光的反射,从而提高出光效率。(The present disclosure provides a light emitting chip processing method, a light emitting chip assembly, a display device and a light emitting device. The light-emitting chip processing method comprises the following steps: photoetching the whole surface of a semiconductor layer used for emitting light of the light-emitting chip to expose the light-emitting surface of the semiconductor layer; etching the residual photoresist after photoetching to form particles on the light emergent surface; and etching the light emergent surface with the particles to form a rough surface. According to the technical scheme, the light-emitting chip can form a rough surface, so that the light reflection is reduced, and the light-emitting efficiency is improved.)

1. A light emitting chip processing method, wherein the method comprises:

photoetching the whole surface of a semiconductor layer used for emitting light of the light-emitting chip to expose the light-emitting surface of the semiconductor layer;

etching the residual photoresist after photoetching to form particles on the light emergent surface;

and etching the light emergent surface with the particles to form a rough surface.

2. The light emitting chip processing method according to claim 1, wherein performing photolithography on an entire surface of a semiconductor layer for emitting light of the light emitting chip to expose a light emitting surface of the semiconductor layer comprises:

and applying photoresist on the whole surface of the semiconductor layer, and removing the photoresist on the light emergent surface of the semiconductor layer by photoetching to expose the light emergent surface.

3. The light emitting chip processing method of claim 2, wherein etching the photoresist remaining after the etching to form particles on the light exit surface comprises:

and etching the residual photoresist by adopting a reactive ion etching mode, and forming polymer particles on the light emergent surface.

4. The light emitting chip processing method of claim 3, wherein etching the remaining photoresist by reactive ion etching and forming polymer particles on the light exit surface comprises:

and the reaction gas used by the reactive ion etching reacts with the photoresist, and the polymer generated by the reaction is uniformly distributed on the light emergent surface in the form of particles.

5. The light emitting chip processing method according to claim 4, wherein the reaction gas includes CHF₃And argon gas.

6. The light-emitting chip processing method according to claim 5, wherein the pressure of the reaction gas is 8mTorr, and the CHF₃The flow rate of (2) is 100sccm, and the flow rate of argon is 20 sccm.

7. The light emitting chip processing method of claim 6, wherein etching the light exit surface with particles to etch the light exit surface into a rough surface comprises:

and etching the light emergent surface with the particles by adopting an inductively coupled plasma etching mode so as to etch the light emergent surface into a rough surface.

8. The light emitting chip processing method of claim 7, wherein etching the light exit surface with the particles thereon in an inductively coupled plasma etching manner to etch the light exit surface to a rough surface comprises:

the reaction gas used for the inductively coupled plasma etching reacts with the particles and the light exit surface and reacts to generate a volatile gas to form a rough surface on the light emitting portion.

9. The light emitting chip processing method of claim 8, wherein the reaction gas comprises argon, chlorine and BCl₃。

10. The light emitting chip processing method according to claim 9, wherein the pressure of the reaction gas is 8mTorr, the flow rate of the argon gas is 10sccm, the flow rate of the chlorine gas is 50sccm, and the BCl₃The flow rate of (2) is 10 sccm.

11. The light emitting chip processing method according to any one of claims 1 to 10, wherein the light emitting chips include Micro-LED light emitting chips, OLED light emitting chips, and LED light emitting chips.

12. The light emitting chip processing method of claim 11, wherein the light emitting chip comprises a plurality of light emitting cells arranged in an array, each of the plurality of light emitting cells comprising a Micro-LED structure, an OLED structure, or an LED structure.

13. A light emitting chip assembly, wherein the light emitting chip assembly comprises a driving back plate and a light emitting chip processed by the light emitting chip processing method according to any one of claims 1 to 12.

14. A display device, wherein the display device comprises the light emitting chip assembly of claim 13.

15. A light emitting device, wherein the light emitting device comprises the light emitting chip assembly of claim 13.

Technical Field

The disclosure relates to the technical field of LEDs, in particular to a light-emitting chip processing method, a light-emitting chip assembly, a display device and a light-emitting device.

Background

Currently, LEDs (light emitting diodes) are applied to display devices and lighting devices in various fields. However, in the manufacturing process of the light emitting chip carrying the LED, the light extraction rate of the final LED chip is not good for various reasons, and particularly, the refractive index at the light emitting surface due to the material of the surface semiconductor layer of the chip is high, so that the total reflection of light is easily formed. This seriously affects the light extraction efficiency, resulting in poor display or illumination of the device. Therefore, in order to obtain the same display or illumination effect, power consumption increases.

Disclosure of Invention

In order to solve the technical problems mentioned in the background art, the present disclosure provides a light emitting chip processing method, a light emitting chip assembly, a display device, and a light emitting device.

According to an aspect of the present disclosure, there is provided a light emitting chip processing method, wherein the method includes: photoetching the whole surface of a semiconductor layer used for emitting light of the light-emitting chip to expose the light-emitting surface of the semiconductor layer; etching the residual photoresist after photoetching to form particles on the light emergent surface; and etching the light emergent surface with the particles to form a rough surface.

Further, performing photolithography on the entire surface of the semiconductor layer of the light emitting chip for emitting light to expose the light emitting surface of the semiconductor layer includes: and applying photoresist on the whole surface of the semiconductor layer, and removing the photoresist on the light emergent surface of the semiconductor layer by photoetching to expose the light emergent surface.

Further, etching the photoresist remaining after the etching to form particles on the light exit surface includes: and etching the residual photoresist by adopting a reactive ion etching mode, and forming polymer particles on the light emergent surface.

Further, etching the remaining photoresist by reactive ion etching, and forming polymer particles on the light exit surface includes: and the reaction gas used by the reactive ion etching reacts with the photoresist, and the polymer generated by the reaction is uniformly distributed on the light emergent surface in the form of particles.

Further, the reaction gas includes CHF₃And argon gas.

Further, the pressure of the reaction gas is 8mTorr, and the CHF₃The flow rate of (2) is 100sccm, and the flow rate of argon is 20 sccm.

Further, etching the light exit surface with the particles to etch the light exit surface into a rough surface includes: and etching the light emergent surface with the particles by adopting an inductively coupled plasma etching mode so as to etch the light emergent surface into a rough surface.

Further, etching the light exit surface with the particles thereon by using an inductively coupled plasma etching method to etch the light exit surface into a rough surface includes: the reaction gas used for the inductively coupled plasma etching reacts with the particles and the light exit surface and reacts to generate a volatile gas to form a rough surface on the light emitting portion.

Further, the reaction gas includes argon, chlorine and BCl₃。

Further, the pressure of the reaction gas is 8mTorr, the flow rate of the argon gas is 10sccm, the flow rate of the chlorine gas is 50sccm, and the BCl₃The flow rate of (2) is 10 sccm.

Further, the light emitting chips comprise Micro-LED light emitting chips, OLED light emitting chips and LED light emitting chips.

Further, the light emitting chip comprises a plurality of light emitting units arranged in an array, and each light emitting unit comprises a Micro-LED, an OLED or an LED.

According to another aspect of the disclosed embodiments, there is also provided a light emitting chip assembly. The light-emitting chip assembly comprises a driving back plate and a light-emitting chip processed by the light-emitting chip processing method.

According to still another aspect of the disclosed embodiments, there is also provided a display device. The display device comprises the light-emitting chip assembly.

According to still another aspect of the disclosed embodiments, there is also provided a light emitting device. The light-emitting device comprises the light-emitting chip assembly.

By applying the technical scheme, the light-emitting chip can form a rough surface, so that the light reflection is reduced, and the light-emitting efficiency is improved.

Drawings

The above and other objects, features and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar or corresponding parts and in which:

fig. 1 is a flowchart illustrating a light emitting chip processing method according to one embodiment of the present disclosure;

FIG. 2 is a schematic flow chart illustrating the fabrication of a light emitting chip assembly including the processing method of FIG. 1 according to one embodiment of the present disclosure;

fig. 3 is a view illustrating a light emitting surface after a light emitting chip surface is processed using the light emitting chip processing method of fig. 1, observed through a scanning electron microscope; and

fig. 4 is a schematic diagram illustrating a structure of a light emitting chip assembly according to one embodiment of the present disclosure.

Detailed Description

It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.

It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may also be oriented 90 degrees or at other orientations and the spatially relative descriptors used herein interpreted accordingly.

Exemplary embodiments according to the present disclosure will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art, in the drawings, the thicknesses of layers and regions are exaggerated for clarity, and the same devices are denoted by the same reference numerals, and thus the description thereof will be omitted.

The present disclosure provides a light emitting chip processing method. Referring to fig. 1, fig. 1 is a flowchart illustrating a light emitting chip processing method according to one embodiment of the present disclosure. As shown in fig. 1, the light emitting chip processing method includes the following steps S101 to S103.

And S101, photoetching is carried out on the whole surface of the semiconductor layer used for emitting light of the light-emitting chip, and the light-emitting surface of the semiconductor layer is exposed.

And S102, etching the residual photoresist after photoetching to form particles on the light emergent surface.

And S103, etching the light emergent surface with the particles to form a rough surface.

In step S101, photolithography may be performed on the entire surface of the semiconductor layer for emitting light of the light emitting chip to expose a light emitting surface of the semiconductor layer.

According to an embodiment of the present disclosure, the semiconductor layer for emitting light may be made of a III-V semiconductor material. The semiconductor layer of the light emitting chip for emitting light may be, for example, the outermost semiconductor layer of the light emitting chip, such as the uppermost, lowermost and side semiconductor layers. The semiconductor layer of the light-emitting chip for emitting light can also be, for example, an intermediate semiconductor layer of the light-emitting chip, for which case the treatment method can be carried out during the production of the light-emitting chip. The photolithography of the semiconductor layer is to regularly leave a photoresist on the surface of the semiconductor layer and to expose at least a surface portion for outgoing light.

Specifically, according to the embodiment of the present disclosure, a photoresist may be applied on the entire surface of the semiconductor layer, and the photoresist on the light exit surface of the semiconductor layer is removed by photolithography to expose the light exit surface. The photoresist may be a positive photoresist or a negative photoresist, and the photoresist may be applied to the surface by spin coating, but may also be applied to the surface by other known methods, which are not limited herein. Further, the above-mentioned lithography may be any of the existing lithography techniques such as excimer lithography, extreme ultraviolet lithography, or electron beam lithography.

In step S102, the photoresist remaining after the photolithography may be etched to form particles on the light exit surface.

According to the embodiment of the disclosure, after photoetching, the light-emitting surface is not provided with photoresist, the photoresist on the surface except the light-emitting surface is etched, particles related to the photoresist can be formed by etching, and the particles can be scattered on the light-emitting surface. In addition, the etching does not have an etching effect on the light-emitting surface. In addition, the particles may be nanoscale particles.

In one embodiment, etching the photoresist remaining after the photolithography to form particles on the light exit surface may include: and etching the residual photoresist by adopting a reactive ion etching mode, and forming polymer particles on the light emergent surface. In this embodiment, the photoresist may be reactive ion etched, which does not etch the light exit surface, thereby reacting with the photoresist to produce polymer particles, and these polymer particles may be dispersed on the light exit surface. It should be noted that etching by way of reactive ion etching is an illustrative example only and does not have a limiting effect on the methods of the present disclosure. It will be appreciated that different particles may be produced by different etching means. For example, etching can be performed using any suitable dry or wet etch method other than reactive ion etching, which does not etch the light exit surface and can react with the photoresist to produce polymer particles or directly produce photoresist particles.

Further, etching the remaining photoresist by reactive ion etching, and forming polymer particles on the light exit surface may include: and the reaction gas used by the reactive ion etching reacts with the photoresist, and the polymer generated by the reaction is uniformly distributed on the light emergent surface in the form of particles. When reactive ion etching is adopted, the used reaction gas reacts with the photoresist, and the polymer generated by the reaction is brought to the light-emitting surface in a particle form by the gas until the polymer particles are uniformly distributed on the light-emitting surface according to the preset distribution proportion. Wherein, the preset distribution ratio can be set according to actual needs, and the preset distribution ratio and the uniform distribution of the polymer particles can be realized according to the composition and parameter setting of the reaction gas.

Wherein the reaction gas may include CHF₃And argon, which has a relatively good etching effect. Furthermore, the reactive gas may be any known suitable gas. When the reactive ion etching is carried out, the pressure of the reaction gas can be 8mTorr corresponding to a specific etching device, and the CHF₃The flow rate of (c) may be 100sccm and the flow rate of argon may be 20sccm, these parameters being merely exemplary and not limiting. Specific parameters can be set according to conditions aiming at different etching machines, self requirements of polymer particles and distribution requirements of the polymer particles on the surface of the wafer, so that higher etching efficiency and better etching effect are achieved. Notably, these polymer particles may be nanoscale particles.

In step S103, the light emergent surface with the particles may be etched to form a rough surface.

According to the embodiment of the disclosure, after the light-emitting surface is uniformly covered with the particles, the light-emitting surface covered with the particles can be etched, the etching can only act on the light-emitting surface not covered with the particles, or can also act on the particles and the light-emitting surface, so that the concave-convex surface is generated through different etching degrees, and the rough surface is further realized.

In one embodiment, the etching only acts on the light exit surface not covered by the particles, and after the etching is completed, the particles covered on the light exit surface can be removed by a suitable etching process or the like.

In another embodiment, etching acts on both the particles and the light exit surface, whereby etching the light exit surface with the particles to etch the light exit surface to a rough surface may comprise: and etching the light emergent surface with the particles by adopting an inductively coupled plasma etching mode so as to etch the light emergent surface into a rough surface. In this embodiment, the particles and the light exit surface may be subjected to inductively coupled plasma etching, and pits are etched on the light exit surface while the particles are removed by etching, so that a concave-convex light exit surface can be formed after the particles are removed. In addition, the inductively coupled plasma etching may have different etching rates for the particles and the light exit surface, for example, the etching rate for the particles is less than the etching rate for the light exit surface, thereby forming a distinct concave-convex surface. It should be noted that the manner in which the inductively coupled plasma etch is used to perform the etch is merely an illustrative example and does not have a limiting effect on the methods of the present disclosure. It will be appreciated that the particles and the light exit surface may be etched by different etching means. For example, etching may be performed using any suitable dry or wet etching method other than inductively coupled plasma etching to achieve the effect of a concave-convex surface.

Further, etching the light exit surface with the particles thereon by using an inductively coupled plasma etching method to etch the light exit surface into a rough surface includes: the reaction gas used for the inductively coupled plasma etching reacts with the particles and the light exit surface and reacts to generate a volatile gas to form a rough surface on the light emitting portion. When the inductively coupled plasma etching is adopted, the used reaction gas can react with the particles and the light-emitting surface simultaneously and generate volatile gas, so that the concave-convex surface can be generated by utilizing different heights of the particles and the light-emitting surface and/or different etching rates of the particles and the light-emitting surface.

Wherein the reaction gas comprises argon, chlorine and BCl₃. Furthermore, the reactive gas may be any known suitable gas. When the inductively coupled plasma etching is performed, the pressure of the reaction gas may be 8mTorr, the flow rate of the argon gas may be 10sccm, the flow rate of the chlorine gas may be 50sccm, and the BCl may correspond to a specific etching device₃The flow rate of (c) may be 10sccm, and these parameters are exemplary only and not limiting. Specific parameters can be set according to conditions aiming at different machines, particles and the characteristics of the light emergent surface and the requirements on the surface roughness, so that higher etching efficiency and better etching effect are achieved.

In addition, the light emitting chip processing method of the present disclosure may further include a photoresist removing step for removing the remaining photoresist from the light emitting chip after the rough surface is formed. The glue removing step can be performed by any known and suitable glue removing process, and is not described herein again.

According to an embodiment of the present disclosure, the light emitting chip processing method of the present disclosure may be applied to processing of light emitting chips at different periods. The above method may be performed, for example, during the manufacturing process of the light emitting chip, or may be performed subsequently on the manufactured light emitting chip. In addition, in a more complicated manner, in some cases, the packaged light emitting chip may be removed from the package in advance, and then the light emitting chip may be processed by performing the above method.

It is noted that the present disclosure also provides a light emitting chip processing method. The method comprises the following steps: step 1: forming particles such as photoresist particles on a light emitting surface of a semiconductor layer for emitting light of the light emitting chip by means of spraying, sputtering or nano-imprinting; step 2: and etching the light emergent surface with the particles to form a rough surface. Here, step 2 may be implemented in a similar manner to step S103 in the above-described method.

According to the embodiment of the present disclosure, the light emitting chip may include Micro-LED light emitting chips, OLED light emitting chips, LED light emitting chips, and the like. Therefore, the light emitting chip processing method of the present disclosure can process for these types of light emitting chips.

According to an embodiment of the present disclosure, the light emitting chip may include a plurality of light emitting cells arranged in an array, the light emitting cells including a Micro-LED structure, an OLED structure, or an LED structure. Therefore, the light emitting chip processing method of the present disclosure may process all of the light emitting units included in the light emitting chip, and may also process some of the light emitting units of the light emitting chip as needed.

In order to be able to more intuitively and clearly understand the light emitting chip processing method of the present disclosure, the processing method of the present disclosure will be described by a more intuitive schematic flowchart. Referring to fig. 2, fig. 2 is a schematic flow diagram illustrating the fabrication of a light emitting chip assembly including the processing method of fig. 1 according to one embodiment of the present disclosure. In the figure, the light emitting chip may be, for example, a Micro-LED light emitting chip, and the light emitting chip processing method may be, for example, performed during the manufacturing process of the light emitting chip assembly. As shown in FIG. 2, the method for manufacturing the Micro-LED light emitting chip assembly may include the following steps S201-S207.

In step S201, an epitaxial growth is performed on a substrate 305, such as a silicon substrate or a sapphire substrate, to form an epitaxial wafer, which may include III-V materials that can form UV, blue, green, and red LEDs, and then the Micro-LED light emitting chip 300 is fabricated on the epitaxial wafer.

In step S202, the Micro-LED light emitting chip 300 is connected to the driving backplane 310 by flip chip bonding pads 320 using a flip chip bonding technique, wherein the flip chip bonding pads 320 may be metal balls or metal cylinder structures of In, Sn, Al, Ti, Ni, or Au formed by electron beam evaporation, thermal evaporation, or sputtering.

In step S203, the substrate 305 on the Micro-LED light emitting chip 300 is peeled off by a laser lift-off technique.

In step S204, a photoresist 340 may be spin-coated on the entire surface of the semiconductor layer of the Micro-LED light emitting chip 300 for emitting light, and the photoresist on the light emitting surface 302 of the semiconductor layer is removed by photolithography, so that the light emitting surface 302 is exposed.

In step S205, the remaining photoresist 340 is etched by reactive ion etching, and polymer particles 303 are formed on the light exit surface 302. Specifically, when reactive ion etching is adopted, the etching method does not etch III-V materials, i.e., does not etch the light-emitting surface 302, the used reaction gas reacts with the photoresist 340, and the polymer generated by the reaction is brought to the light-emitting surface in the form of particles by the gas until the polymer particles 303 are uniformly distributed on the light-emitting surface 302 according to a preset distribution ratio, wherein the polymer particles 303 are nano-scale particles. Wherein the pressure of the reaction gas may be 8mTorr, the CHF₃The flow rate of (3) may be 100sccm, and the flow rate of argon may be 20 sccm.

In step S206, the light-exiting surface 302 with the polymer particles 303 thereon is etched by using an inductively coupled plasma etching method, so that the light-exiting surface 302 forms a rough surface. Specifically, when the inductively coupled plasma etching is employed, the reaction gas used may react with the polymer particles 303 and the light exit surface 302 at the same time and generate a volatile gas, thereby generating a concave-convex surface using different heights of the particles from the light exit surface. Furthermore, the inductively coupled plasma etching may have different etching rates for the polymer particles 303 and the light exit surface 302, e.g., the etching rate for the polymer particles 303 is less than the etching rate for the light exit surface 302, thereby forming a significantly concave-convex surface. Wherein the reaction gas comprises argon, chlorine and BCl₃. The pressure of the reactant gas may be 8mTorr,the flow rate of the argon gas can be 10sccm, the flow rate of the chlorine gas can be 50sccm, and the BCl₃The flow rate of (c) may be 10 sccm.

In step S207, after the rough surface is formed, the remaining photoresist 340 is removed from the Micro-LED light emitting chip 300 using a photoresist removing process, thereby forming the Micro-LED light emitting chip assembly 3.

It should be understood that steps S204-S207 in the method belong to one exemplary embodiment of the processing method described above with respect to fig. 1, without limiting the same.

Further, referring to fig. 3, fig. 3 shows a view of a light exit surface after a light emitting chip surface is processed using the light emitting chip processing method of fig. 1, observed through a scanning electron microscope. Since the light exit surface is ultimately a nano-scale rough surface, a microscope is required for observation. In this view, the roughness of the light exit surface can be clearly seen.

The present disclosure also provides a light emitting chip assembly. Referring to fig. 4, fig. 4 is a schematic view illustrating a structure of a light emitting chip assembly according to one embodiment of the present disclosure.

As shown in fig. 4, the light emitting chip assembly 1 includes a driving back plate 110 and light emitting chips 100 processed using the above light emitting chip processing method. The light emitting chip assembly processed in the way has high light emitting efficiency.

As shown in fig. 4, the light emitting chip assembly 1 may include: a light emitting chip 100, which includes an illuminant 101 and a first semiconductor layer 102, wherein the illuminant 101 and the first semiconductor layer 102 are adjacently disposed, and a side of the first semiconductor layer 102 away from the illuminant 101 has a rough surface 1021; and a driving back plate 110 connected to a side of the light emitter 101 away from the first semiconductor layer 102.

According to the structure of the light-emitting chip assembly, the light-emitting chip has the rough surface, so that the light-emitting efficiency of the light-emitting chip assembly is improved.

According to the embodiment of the present disclosure, the rough surface may be a nano-scale rough surface, and the shape of the nano-scale rough surface may be a densely arranged columnar or prismatic protrusion.

According to the embodiment of the disclosure, the rough surface 1021 is located at a position of the first semiconductor layer 102 corresponding to the light emitter 101. It can be seen that, the rough surface 1021 is only arranged above the light emitting body 101, that is, only the light emitting surface of the light emitting chip is arranged as a rough surface, which is beneficial to reducing the manufacturing time of the rough surface and saving the cost while ensuring the light emitting efficiency.

According to the embodiment of the present disclosure, the light emitter 101 further includes a multiple quantum well 1011 formed by two semiconductor layers, and the multiple quantum well 1011 is disposed adjacent to the first semiconductor layer 102. The light emitter 101 further includes a second semiconductor layer 1012, and the second semiconductor layer 1012 is disposed between the driving back plate 110 and the multiple quantum well 1011 and is disposed adjacent to the multiple quantum well 1012. The light emitter 101 further comprises a current diffusion layer 1013, the current diffusion layer 1013 being disposed between the driving back plate 110 and the second semiconductor layer 1012 and being disposed adjacent to the second semiconductor layer 1012. The above-mentioned components of the light emitter 101 may be made of any suitable known semiconductor material, and are not limited herein.

According to an embodiment of the present disclosure, the light emitting chip 100 further includes a P-electrode 103, and the P-electrode 103 is disposed between the driving back plate 110 and the current diffusion layer 1013 and adjacent to the current diffusion layer 1013. The light emitting chip 100 further includes an N-electrode network 104, where the N-electrode network 104 is disposed on the first semiconductor layer 102 and located on the light emitter side of the first semiconductor layer 102. Furthermore, the N-electrode network 104 may be arranged between a plurality of luminaires 101.

According to an embodiment of the present disclosure, the first semiconductor layer 102 may be an N-GaN layer, and the second semiconductor layer 1012 may be a P-GaN layer. Alternatively, the first semiconductor layer 102 may be a P-GaN layer, and the second semiconductor layer 1012 may be an N-GaN layer. After the material of the first semiconductor layer and the material of the second semiconductor layer are exchanged, the corresponding structure of the light emitting chip assembly can be adjusted adaptively.

According to an embodiment of the present disclosure, the rough surface 1021 may be realized by one photolithography and two etching with a photoresist. The specific etching method is described in detail below.

According to the embodiment of the present disclosure, the light emitting chip assembly 1 may further include a pad 120, the pad 120 may be disposed on the driving back plate 110, and the light emitting chip 100 is connected to the driving back plate 110 through the pad 120. Thus, the connection between the light emitting chip 100 and the driving back plate 110 is firmer and more stable.

According to an embodiment of the present disclosure, the light emitting chip 100 may include a Micro-LED light emitting chip, an OLED light emitting chip, and an LED light emitting chip. For this reason, various light emitting chips may have the above-described rough surface, thereby improving light extraction efficiency.

According to an embodiment of the present disclosure, the light emitting chip 100 includes a plurality of light emitting cells arranged in an array, each of the plurality of light emitting cells including a light emitter 101 and a first semiconductor layer 102. Referring to fig. 4, the first semiconductor layers 102 of the plurality of light emitting cells may be one as a whole, and the plurality of light emitters 101 share one first semiconductor layer 102. According to another embodiment, an independent first semiconductor layer may correspond to one light emitter.

The present disclosure also provides a display device. The display device includes the above light emitting chip, which may include a light emitting unit such as a pixel unit. The display device may be, for example, a display screen applied to an electronic apparatus. The electronic device may include: any equipment with a display screen, such as a smart phone, a smart watch, a notebook computer, a tablet computer, a vehicle event data recorder, a navigator and the like.

The present disclosure also provides a light emitting device. The light emitting device includes the above light emitting chip, and the light emitting chip may include a light emitting unit. The light emitting means may be, for example, a lighting means and an indicating means. The lighting device may be, for example, various lamps for illumination. The indicating means may be, for example, various indicator lights for indicating action.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.

It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, and various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.