阅读说明：本技术 金属氧化物半导体传感器及其制备方法 (Metal oxide semiconductor sensor and preparation method thereof ) 是由 王帅毅 于 2020-12-30 设计创作，主要内容包括：本发明提供一种金属氧化物半导体传感器及其制备方法。金属氧化物半导体传感器的制备方法,包括以下步骤：在衬底基板上依次形成栅极以及栅极绝缘层；在栅极绝缘层上形成有源岛,有源岛包括源极、漏极以及经过离子注入的金属氧化物半导体图形；在形成有有源岛的所述栅极绝缘层上形成由压电材料或光敏材料构成的保护层。本发明中金属氧化物半导体传感器的灵敏度高。(The invention provides a metal oxide semiconductor sensor and a preparation method thereof. The preparation method of the metal oxide semiconductor sensor comprises the following steps: sequentially forming a grid and a grid insulating layer on the substrate; forming an active island on the gate insulating layer, wherein the active island comprises a source electrode, a drain electrode and a metal oxide semiconductor pattern subjected to ion implantation; and forming a protective layer made of a piezoelectric material or a photosensitive material on the gate insulating layer on which the active islands are formed. The metal oxide semiconductor sensor has high sensitivity.)

1. A preparation method of a metal oxide semiconductor sensor is characterized by comprising the following steps:

sequentially forming a grid and a grid insulating layer on the substrate;

forming an active island on the gate insulating layer, wherein the active island comprises a source electrode, a drain electrode and a metal oxide semiconductor pattern subjected to ion implantation;

and forming a protective layer made of a piezoelectric material or a photosensitive material on the gate insulating layer on which the active islands are formed.

2. The method according to claim 1, wherein the metal oxide semiconductor sensor is a semiconductor sensor,

the forming of the protective layer made of a piezoelectric material or a photosensitive material on the gate insulating layer on which the active island is formed specifically includes:

and forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride on the gate insulating layer on which the active island is formed, so as to serve as the protective layer made of the piezoelectric material or the photosensitive material.

3. The method according to claim 2, wherein the metal oxide semiconductor sensor is a semiconductor sensor,

forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride on the gate insulating layer on which the active island is formed, specifically comprising:

dissolving alpha-type polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form an alpha-type polyvinylidene fluoride solution;

and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer with the active island, and performing vacuum drying at 40-70 ℃ for 30-80 min to form a film layer of the beta-type polyvinylidene fluoride and/or the gamma-type polyvinylidene fluoride.

4. The method according to claim 2, wherein the metal oxide semiconductor sensor is a semiconductor sensor,

forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride on the gate insulating layer on which the active island is formed, specifically comprising:

dissolving alpha-type polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form an alpha-type polyvinylidene fluoride solution;

and coating the alpha-type polyvinylidene fluoride solution on the grid insulating layer with the active island, and applying a shearing force to the alpha-type polyvinylidene fluoride solution coated on the grid insulating layer to form a film layer of the beta-type polyvinylidene fluoride and/or the gamma-type polyvinylidene fluoride.

5. The method according to claim 2, wherein the metal oxide semiconductor sensor is a semiconductor sensor,

forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride on the gate insulating layer on which the active island is formed, specifically comprising:

dissolving alpha-type polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form an alpha-type polyvinylidene fluoride solution;

and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer on which the active island is formed, and performing an annealing process to form a film layer of the beta-type polyvinylidene fluoride and/or the gamma-type polyvinylidene fluoride.

6. The method for producing a metal oxide semiconductor sensor according to any one of claims 3 to 5,

coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer on which the active island is formed, and specifically comprises:

spin coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer on which the active islands are formed; or

And encapsulating the substrate on which the grid electrode, the grid electrode insulating layer and the active island are formed in the alpha-polyvinylidene fluoride solution.

7. The method for producing a metal oxide semiconductor sensor according to any one of claims 1 to 5,

forming an active island on the gate insulating layer, specifically including:

forming a first metal oxide semiconductor pattern on the gate insulating layer;

performing F ion implantation on the first metal oxide semiconductor pattern to form the metal oxide semiconductor pattern subjected to the ion implantation;

and forming a source electrode and a drain electrode on the gate insulating layer on which the ion-implanted metal oxide semiconductor pattern is formed.

8. The method according to claim 7, wherein the metal oxide semiconductor sensor is a semiconductor sensor,

performing F ion implantation on the first metal oxide semiconductor pattern comprises:

and processing the F-series gas into F-containing radical plasma through a dry etching process, and performing F ion implantation on the first metal oxide semiconductor pattern by using the F-containing radical plasma.

9. A metal oxide semiconductor sensor fabricated by the method of any one of claims 1 to 8, comprising:

a substrate base plate;

a gate formed on the substrate base plate;

the grid insulation layer is formed on the substrate base plate and covers the grid;

the active island is formed on the grid insulation layer and corresponds to the position of the grid, and the active island comprises a source electrode, a drain electrode and a metal oxide semiconductor pattern subjected to ion implantation;

a protective layer formed on the gate insulating layer provided with the active islands.

10. The metal oxide semiconductor sensor of claim 9,

the protective layer is a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.

Technical Field

The invention relates to the technical field of semiconductor device manufacturing, in particular to a metal oxide semiconductor sensor and a preparation method thereof.

Background

The semiconductor sensor is a sensor made of various physical, chemical and biological characteristics of semiconductor materials, and is widely applied to various fields of military affairs and national economy, such as remote sensing, night vision, investigation, imaging and the like.

Currently, most semiconductor materials used for semiconductor sensors are silicon and compounds of elements of groups III-V and II-VI. The semiconductor material has low electron mobility and poor conductive characteristics. Especially, the photoelectric effect of the semiconductor is utilized to convert the optical signal into the electrical signal for output, and the piezoelectric material is utilized to convert the external force into the electrical signal for output, so the poor electrical characteristics of the semiconductor material directly affect the application range of the semiconductor sensor.

However, the above-mentioned prior art semiconductor sensor has poor sensitivity due to defects of the semiconductor material itself contained therein.

Disclosure of Invention

The invention provides a metal oxide semiconductor sensor and a preparation method thereof, which can improve the detection sensitivity of the metal oxide semiconductor sensor.

The invention provides a preparation method of a metal oxide semiconductor sensor, which comprises the following steps: sequentially forming a grid and a grid insulating layer on the substrate; forming an active island on the gate insulating layer, wherein the active island comprises a source electrode, a drain electrode and a metal oxide semiconductor pattern subjected to ion implantation; a protective layer composed of a piezoelectric material or a photosensitive material is formed on the gate insulating layer on which the active islands are formed.

In one possible implementation, forming a protective layer made of a piezoelectric material or a photosensitive material on the gate insulating layer on which the active islands are formed specifically includes: and forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride on the gate insulating layer on which the active island is formed, as a protective layer made of a piezoelectric material or a photosensitive material.

In one possible implementation manner, forming a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride on the gate insulating layer on which the active island is formed specifically includes: dissolving alpha-type polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form an alpha-type polyvinylidene fluoride solution; and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer with the active island, and performing vacuum drying at 40-70 ℃ for 30-80 min to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.

In one possible implementation manner, forming a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride on the gate insulating layer on which the active island is formed specifically includes: dissolving alpha-type polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form an alpha-type polyvinylidene fluoride solution; and coating the alpha-type polyvinylidene fluoride solution on the grid insulating layer with the active island, and applying a shearing force to the alpha-type polyvinylidene fluoride solution coated on the grid insulating layer to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.

In one possible implementation manner, forming a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride on the gate insulating layer on which the active island is formed specifically includes: dissolving alpha-type polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form an alpha-type polyvinylidene fluoride solution; and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer with the active island, and performing an annealing process to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.

In one possible implementation manner, the application of the α -type polyvinylidene fluoride solution on the gate insulating layer on which the active island is formed specifically includes: rotationally coating an alpha-type polyvinylidene fluoride solution on a gate insulating layer on which an active island is formed; or the substrate base plate formed with the grid, the grid insulating layer and the active island is encapsulated in alpha-type polyvinylidene fluoride solution.

In one possible implementation, forming an active island on the gate insulating layer specifically includes: forming a first metal oxide semiconductor pattern on the gate insulating layer; performing F ion implantation on the first metal oxide semiconductor pattern to form an ion implanted metal oxide semiconductor pattern; and forming a source electrode and a drain electrode on the gate insulating layer on which the metal oxide semiconductor pattern subjected to the ion implantation is formed.

In one possible implementation, the performing F ion implantation on the first metal oxide semiconductor pattern includes: and processing the F-series gas into F-containing radical plasma through a dry etching process, and performing F ion implantation on the first metal oxide semiconductor pattern by using the F-containing radical plasma.

The second aspect of the present invention provides a metal oxide semiconductor sensor, which is manufactured by the above method for manufacturing a metal oxide semiconductor sensor, the metal oxide semiconductor sensor comprising: a substrate base plate; a gate formed on the substrate; a gate insulating layer formed on the substrate and covering the gate; the active island is formed on the grid insulating layer and corresponds to the position of the grid, and comprises a source electrode, a drain electrode and a metal oxide semiconductor pattern subjected to ion implantation; and a protective layer formed on the gate insulating layer on which the active islands are formed.

In one possible implementation, the protective layer is a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride.

The invention provides a metal oxide semiconductor sensor and a preparation method thereof, wherein the preparation method of the metal oxide semiconductor sensor comprises the following steps: sequentially forming a grid and a grid insulating layer on the substrate; forming an active island on the gate insulating layer, wherein the active island comprises a source electrode, a drain electrode and a metal oxide semiconductor pattern subjected to ion implantation; a protective layer composed of a piezoelectric material or a photosensitive material is formed on the gate insulating layer on which the active islands are formed. The metal oxide semiconductor pattern subjected to ion implantation has high electron mobility and conductivity, and a protective layer made of a piezoelectric material or a photosensitive material is formed, so that the metal oxide semiconductor pattern has the characteristics of corrosion resistance, high weather resistance, high physical and chemical stability and the like.

Drawings

In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without inventive labor.

FIG. 1 is a flow chart of a method for fabricating a metal oxide semiconductor sensor according to an embodiment of the present invention;

fig. 2a is a schematic structural diagram of a metal oxide semiconductor sensor in a first state in a method for manufacturing the metal oxide semiconductor sensor according to an embodiment of the present invention;

fig. 2b is a schematic structural diagram of the metal oxide semiconductor sensor in a second state in the method for manufacturing the metal oxide semiconductor sensor according to the embodiment of the invention;

fig. 2c is a schematic structural diagram of a metal oxide semiconductor sensor in a third state in the method for manufacturing a metal oxide semiconductor sensor according to the embodiment of the present invention;

fig. 2d is a schematic structural diagram of a metal oxide semiconductor sensor in a fourth state in the method for manufacturing a metal oxide semiconductor sensor according to the embodiment of the present invention;

fig. 2e is a schematic structural diagram of the metal oxide semiconductor sensor in a fifth state in the method for manufacturing the metal oxide semiconductor sensor according to the embodiment of the present invention;

fig. 2f is a schematic structural diagram of a metal oxide semiconductor sensor in a sixth state in the method for manufacturing a metal oxide semiconductor sensor according to the embodiment of the present invention;

FIG. 3 is a schematic structural diagram of a metal oxide semiconductor sensor according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of a metal oxide semiconductor sensor according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of a MOS sensor according to an embodiment of the invention;

fig. 6 is an electrical characteristic curve of a metal oxide semiconductor pattern subjected to ion implantation in the metal oxide semiconductor sensor according to an embodiment of the present invention.

Reference numerals:

100-metal oxide semiconductor sensors; 1-a substrate base plate; 2-a grid; 3-a gate insulating layer; 5-active island; 51-source electrode; 52-a drain electrode; 53-metal oxide semiconductor pattern by ion implantation; 54-a first metal oxide semiconductor pattern; 55-a light source; 56-a pressure applying device; 6-protective layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Example one

Fig. 1 is a flowchart of a method for manufacturing a metal oxide semiconductor sensor according to an embodiment of the present invention. Referring to fig. 1, the present application provides a method for manufacturing a metal oxide semiconductor sensor, comprising the steps of:

s100, sequentially forming a grid electrode and a grid electrode insulating layer on a substrate;

s200, forming an active island on the grid insulation layer, wherein the active island comprises a source electrode, a drain electrode and a metal oxide semiconductor pattern subjected to ion implantation;

and S300, forming a protective layer made of piezoelectric materials or photosensitive materials on the gate insulating layer on which the active island is formed.

In the scheme, the metal oxide semiconductor pattern subjected to ion implantation has high electron mobility and conductivity, and the protective layer formed by the piezoelectric material or the photosensitive material is formed, so that the metal oxide semiconductor pattern has the characteristics of corrosion resistance, high weather resistance, high physical and chemical stability and the like.

Furthermore, the sensor of the embodiment comprehensively utilizes the semiconductor material subjected to ion implantation and the characteristics of the beta-type polyvinylidene fluoride and/or the gamma-type polyvinylidene fluoride material with high dielectric, high piezoelectric and optical sensitivity characteristics to realize the combination of the semiconductor material and the functional polymer material, so that the sensitivity of the sensor is improved

Fig. 2a is a schematic structural diagram of a metal oxide semiconductor sensor in a first state in a manufacturing method of the metal oxide semiconductor sensor according to an embodiment of the present invention, and fig. 2b is a schematic structural diagram of the metal oxide semiconductor sensor in a second state in the manufacturing method of the metal oxide semiconductor sensor according to the embodiment of the present invention.

In step S100, sequentially forming the gate electrode 2 and the gate insulating layer 3 on the substrate 1 may specifically include: a gate metal layer is deposited on the substrate base plate 1 and a photolithography process is performed to form the gate 2, thereby forming the mos sensor in the first state, as shown in fig. 2 a.

The metal oxide semiconductor sensor in the second state is then formed on the basis of the metal oxide semiconductor sensor in the first state, i.e. on the base substrate 1 on which the gate 2 is formed, covering the entire layer of the gate insulating layer 3, as shown in fig. 2 b.

The substrate 1 may be a glass substrate, which may be cleaned before depositing the gate metal layer. Specifically, a gate metal layer may be deposited on the substrate 1 by a physical vapor deposition method, and then the gate 2 is formed by a photolithography process. A gate insulating layer 3 of SiN or SiO is deposited on the substrate 1 on which the gate 2 is formed by chemical vapor deposition.

Fig. 2c is a schematic structural diagram of the metal oxide semiconductor sensor in a third state in the method for manufacturing the metal oxide semiconductor sensor according to the embodiment of the present invention, and fig. 2d is a schematic structural diagram of the metal oxide semiconductor sensor in a fourth state in the method for manufacturing the metal oxide semiconductor sensor according to the embodiment of the present invention.

In step S200, an active island 5 is formed on the gate insulating layer 3, and the active island 5 includes a source 51, a drain 52, and an ion-implanted metal oxide semiconductor pattern 53. The ion-implanted metal oxide semiconductor pattern 53 is specifically formed by ion-implanting the first metal oxide semiconductor pattern 53 to form a semiconductor film having a high electron state. And the active island 5 is formed on the gate insulating layer 3, and specifically includes:

a first metal oxide semiconductor pattern 54 is formed on the gate insulating layer 3, referring to fig. 2 c. Specifically, a metal oxide semiconductor layer, such as an IGZO layer, is prepared on the basis of the metal oxide semiconductor sensor in the second state, i.e., on the gate insulating layer 3, by using a physical vapor deposition method, and the first metal oxide semiconductor pattern 54 is formed by a photolithography process to form the metal oxide semiconductor sensor in the third state.

Referring to fig. 2d, the circles indicate F radical plasma, and F ion implantation is performed on the first metal oxide semiconductor pattern 54 to form an ion-implanted metal oxide semiconductor pattern 53, and a fourth state metal oxide semiconductor sensor is formed, on the basis of the third state metal oxide semiconductor sensor.

In the embodiment of the present application, the F ion implantation of the first metal oxide semiconductor pattern 54 includes: the F-based gas is processed into F radical containing plasma by a dry etching process, and F ion implantation is performed on the first metal oxide semiconductor pattern 54 by the F radical containing plasma.

Illustratively, after forming the first metal oxide semiconductor pattern 54, a gas containing an F-series gas, such as CF₄、NF₃At least one of the first metal oxide semiconductor pattern 54 is processed. Specifically, a gas containing F group, e.g. CF₄、NF₃At least one of the two is introduced into the dry etching process equipment, and the dry etching process is utilizedThe apparatus of (1) prepares the gas as a radical plasma containing F, which can be injected into the first metal oxide semiconductor pattern 54 in the apparatus of the dry etching process, thereby forming a semiconductor film having a high electron state.

It is understood that the high concentration, low damage F-containing radical plasma can be prepared by varying the dry etch process conditions in the dry etch process equipment. Meanwhile, the injection amount of the radical plasma containing F has an important role in the electrical characteristics of the semiconductor device.

In the embodiment of the present application, in order to optimize the injection of the radicals containing F into the semiconductor layer, the gas flow rate (volume flow rate) of the gas containing F system introduced into the dry etching process equipment is set to 300sccm to 700sccm, the pressure of the gas is set to 0.2Mpa to 0.5Mpa, and the power of the dry etching process equipment is set to 15kW to 30 kW. With the above parameters, the finally formed ion-implanted metal oxide semiconductor pattern 53 can have excellent electrical characteristics.

Fig. 2e is a schematic structural diagram of the metal oxide semiconductor sensor in a fifth state in the method for manufacturing the metal oxide semiconductor sensor according to the embodiment of the present invention.

Referring to fig. 2e, the source electrode 51 and the drain electrode 52 are formed on the basis of the metal oxide semiconductor sensor in the fourth state, i.e., on the gate insulating layer 3 on which the metal oxide semiconductor pattern 53 subjected to ion implantation is formed. Specifically, a source-drain metal layer is formed on the gate insulating layer 3 by using a physical vapor deposition method, and a source 51 and a drain 52 are formed on the source-drain metal layer by using a photolithography process, so as to form the metal oxide semiconductor sensor in the fifth state.

In step S300, a protective layer 6 composed of a piezoelectric material or a photosensitive material is formed on the gate insulating layer 3 where the active islands 5 are formed. The protective layer 6 functions as a piezoelectric, photosensitive material in the metal oxide semiconductor sensor 100, and the presence of the protective layer 6 also protects the electrical characteristics of the ion implanted metal oxide semiconductor pattern 53.

Fig. 2f is a schematic structural diagram of the metal oxide semiconductor sensor in a sixth state in the method for manufacturing the metal oxide semiconductor sensor according to the embodiment of the present invention.

Specifically, a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride may be formed on the basis of the metal oxide semiconductor sensor in the fifth state, that is, on the gate insulating layer 3 on which the active islands 5 are formed, as the protective layer 6 made of a piezoelectric material or a photosensitive material, and a metal oxide semiconductor sensor in the sixth state may be formed, as shown in fig. 2 f.

And the film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride is used as the protective layer 6, so that the protective layer 6 has the advantages of corrosion resistance, strong weather resistance, high physical and chemical stability and the like. In normal production and preparation of a common polyvinylidene fluoride polymer material, the material does not have electrical characteristics, the physical characteristics of the material are mainly determined by the crystal structure of the material, the main crystal structure types of the material are alpha, beta and gamma, the alpha crystal structure of the material does not have the electrical characteristics, only beta and gamma type polyvinylidene fluoride have excellent piezoelectric and dielectric characteristics, and the material is applied to preparation of functional materials, because the beta and gamma phase crystal form molecular chain structures of the polyvinylidene fluoride have large intermolecular dipole moment due to the TTT conformation, so that the material has good dielectric characteristics. In the embodiment of the present application, the protective layer 6 uses a β -type polyvinylidene fluoride and/or a γ -type polyvinylidene fluoride as the protective layer 6, and protects the electrical characteristics of the metal oxide semiconductor pattern 53 subjected to ion implantation. The metal oxide semiconductor sensor 100 has the characteristics of high sensitivity and high reliability.

The method for forming the film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride will be specifically described below.

Specifically, forming a film layer of β -type polyvinylidene fluoride and/or γ -type polyvinylidene fluoride on a gate insulating layer on which active islands are formed includes:

dissolving alpha-type polyvinylidene fluoride into a solvent of N, N-dimethylformamide to form an alpha-type polyvinylidene fluoride solution;

coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer with the active island, and forming a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride by the following three methods.

The method comprises the following steps: and coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer with the active island to form a first device, and carrying out vacuum drying at 40-70 ℃ for 30-80 min to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride. Wherein, the first device can be placed in a vacuum box to quickly dry the vacuum drying box, and different pumping rates and vacuum drying temperatures will affect the contents of different beta-type crystal structures. The vacuum drying time can be 30 min-80 min, and the drying temperature of the vacuum drying is 40-70 ℃.

The second method comprises the following steps: and applying a shearing force to the alpha-type polyvinylidene fluoride solution coated on the gate insulating layer to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.

Specifically, the surface of the second device is rapidly rubbed by the friction equipment with high shearing force to form enough shearing force, the action of the shearing force has a stretching induction effect on a macromolecular structure, a beta-type crystal structure is favorably generated, and the beta-type crystals prepared at different shearing pressures and different speeds have different contents. Illustratively, the shear force ranges from 20MPa to 60MPa, and the application speed of the shear force ranges from 0.5m/s to 3 m/s.

The third method comprises the following steps: coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer with the active island to form a third device, coating the alpha-type polyvinylidene fluoride solution on the gate insulating layer with the active island, and then carrying out an annealing process to form a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride.

Specifically, the third device is placed on a high-temperature hot table for annealing, polyvinylidene fluoride which is converted from alpha crystal into gamma crystal is generated, the polyvinylidene fluoride has piezoelectric property, different annealing temperatures and annealing times influence the generation of gamma crystal structure, the temperature range of the annealing process is 40-70 ℃, and the time range of the annealing process is 24-168 hr.

In the embodiment of the present application, applying an α -type polyvinylidene fluoride solution on a gate insulating layer where an active island is formed may include: rotationally coating an alpha-type polyvinylidene fluoride solution on a gate insulating layer on which an active island is formed; or the substrate base plate formed with the grid, the grid insulating layer and the active island is encapsulated in alpha-type polyvinylidene fluoride solution.

In this embodiment, the method for manufacturing the metal oxide semiconductor sensor 100 includes the following steps: sequentially forming a gate and a gate insulating layer 3 on a substrate 1; forming an active island 5 on the gate insulating layer 3, the active island 5 including a source 51, a drain 52 and an ion-implanted metal oxide semiconductor pattern 53; a protective layer 6 made of a piezoelectric material or a photosensitive material is formed on the gate insulating layer 3 where the active islands 5 are formed. The method combines the existing production process of the metal oxide semiconductor, prepares the oxide semiconductor sensor with high performance by optimizing process conditions, is suitable for application in the fields of various intelligent switches, display devices and the like, and has higher economic added value.

Example two

Fig. 3 is a schematic structural diagram of a metal oxide semiconductor sensor 100 according to an embodiment of the present invention, and referring to fig. 3, the metal oxide semiconductor sensor 100 according to the present embodiment is manufactured by using the manufacturing method of the metal oxide semiconductor sensor according to the first embodiment, where the manufacturing method of the metal oxide semiconductor sensor is already described in detail in the first embodiment, and is not repeated here.

The metal oxide semiconductor sensor 100 in the present embodiment includes: a base substrate 1; a gate 2, the gate 2 being formed on the base substrate 1; a gate insulating layer 3, the gate insulating layer 3 being formed on the substrate base plate 1 and covering the gate 2; an active island 5, the active island 5 being formed on the gate insulating layer 3 and corresponding to the position of the gate 2, the active island 5 including a source 51, a drain 52 and an ion-implanted metal oxide semiconductor pattern 53; and a protective layer 6, the protective layer 6 being formed on the gate insulating layer 3 provided with the active islands 5.

Wherein, the protective layer 6 is a film layer of beta-type polyvinylidene fluoride and/or gamma-type polyvinylidene fluoride. And the ion-implanted metal oxide semiconductor pattern 53 is an F ion-implanted metal oxide semiconductor pattern.

In the metal oxide semiconductor sensor 100 of the embodiment, the damage of the semiconductor film layer (the metal oxide semiconductor pattern 53 subjected to ion implantation) is low, and the semiconductor film layer after F formation has high electron mobility and conductivity, so that the device sensitivity of the sensor is improved. And the high-sensitivity sensor device is beneficial to sensing micro pressure, light and the like, and has better application effect in different scenes. The existing 5Mask and 4Mask photoetching processes can be utilized in the photoetching process and the like adopted in the preparation process, and the cost is lower.

In the embodiment of the application, the metal oxide semiconductor sensor 100 prepared by the method has high pressure-sensitive property and photosensitive property, and under the action of different pressures and light sources induced by the device, the molecular torque changes along with the adjustment of the molecular structure of the polyvinylidene fluoride, so that the metal oxide semiconductor is induced to generate more conductive ions to form conduction current, and the conduction current is rapidly sensed.

The following describes a model of induced charges of the metal oxide semiconductor sensor prepared by the method of the first embodiment under the action of external pressure and light source. Fig. 4 is a model diagram of charge induced by the mos sensor under the action of an external pressure according to the embodiment of the present invention, and fig. 5 is a model diagram of charge induced by the mos sensor under the action of an external light source according to the embodiment of the present invention.

Referring to fig. 4 and 5, the molecular structure of the protective layer 6 is represented by an ellipse, the electrons in the metal oxide semiconductor pattern 53 subjected to ion implantation are represented by a circle, and the drain electrode 52 can be a signal output terminal of the metal oxide semiconductor sensor 100 under the condition that both ends of the substrate 1 and the source electrode 51 of the sensor are pressurized, and the output terminal of the drain electrode 52 can detect the sensitivity of the sensor 100. In fig. 4, a certain pressure is applied to the mos sensor 100 by the pressure applying device 56, in fig. 5, the mos sensor 100 is irradiated by the light source 55, and referring to fig. 4 and fig. 5, it can be known that a large number of electrons appear in the ion implanted mos pattern 53, and the molecular structure in the protective layer 6 changes from the original disorder to extending along the direction of the electric field, which also greatly improves the sensitivity of the mos sensor 100.

Fig. 6 is an electrical characteristic curve of a metal oxide semiconductor pattern subjected to ion implantation in the metal oxide semiconductor sensor according to an embodiment of the present invention.

Referring to fig. 6, a curve shown by a dotted line is a TFT transfer characteristic curve of the first metal oxide semiconductor pattern 54 before ion implantation, and a curve shown by a solid line is a TFT transfer characteristic curve of the semiconductor pattern after ion implantation, i.e., the first metal oxide semiconductor pattern 53. As can be seen, after ion implantation, the solid line has higher mobility, lower threshold voltage and higher sub-threshold swing in the semiconductor material than the dashed line. Therefore, the output electrical characteristics of the metal oxide semiconductor pattern subjected to ion implantation are better than those before ion implantation.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.