阅读说明：本技术 发光二极管的外延片及其制备方法 (Epitaxial wafer of light emitting diode and preparation method thereof ) 是由 丁涛 龚程成 尹涌 梅劲 于 2020-12-30 设计创作，主要内容包括：本公开提供了一种发光二极管的外延片及其制备方法,属于光电子制造技术领域。该外延片包括衬底和依次形成在所述衬底上的AlN缓冲层、n型层、多量子阱层和p型层,其中,所述n型层包括由多个InN层和多个AlInGaN层交替层叠形成的超晶格结构,所述AlInGaN层掺杂有Si,AlInGaN层中的Si与In形成Si-In共掺结构,Si-In共掺结构能够有效抑制深受主中心的形成,从而减小自补偿效应,提高载流子的迁移率,InN材料也具有很好的电子输运性能,也有利于载流子迁移率的提高,从而提升n型层的电导率,提高深紫外发光二极管的电注入效率和发光效率。(The disclosure provides an epitaxial wafer of a light emitting diode and a preparation method thereof, belonging to the technical field of photoelectron manufacturing. The epitaxial wafer comprises a substrate, and an AlN buffer layer, an n-type layer, a multi-quantum well layer and a p-type layer which are sequentially formed on the substrate, wherein the n-type layer comprises a superlattice structure formed by alternately laminating a plurality of InN layers and a plurality of AlInGaN layers, the AlInGaN layers are doped with Si, the Si and the In the AlInGaN layers form an Si-In co-doped structure, and the Si-In co-doped structure can effectively inhibit the formation of a deep acceptor center, so that the self-compensation effect is reduced, the mobility of carriers is improved, the InN material also has good electronic transport performance, and the improvement of the mobility of the carriers is facilitated, so that the conductivity of the n-type layer is improved, and the electric injection efficiency and the light emitting efficiency of the deep ultraviolet light emitting diode are improved.)

1. An epitaxial wafer of a light emitting diode, characterized in that the epitaxial wafer comprises a substrate (10) and an AlN buffer layer (20), an n-type layer (30), a multi-quantum well layer (40) and a p-type layer (50) which are sequentially formed on the substrate (10), wherein the n-type layer (30) comprises a superlattice structure formed by alternately laminating a plurality of InN layers (31) and a plurality of AlInGaN layers (32), and the AlInGaN layers (32) are doped with Si.

2. Epitaxial wafer according to claim 1, characterized in that the doping concentration of Si in the AlInGaN layer (32) is 8 x 10¹⁷cm^-3～2×10¹⁸cm^-3。

3. An epitaxial wafer according to claim 1 or 2, characterized in that the thickness of the n-type layer (30) is between 1.5 μm and 2 μm.

4. Epitaxial wafer according to claim 1 or 2, characterized in that the InN layer (31) has a thickness of 10 to 20nm and the AlInGaN layer (32) has a thickness of 10 to 20 nm.

5. The epitaxial wafer of claim 1 or 2, wherein the number of cycles of the superlattice structure is 20 to 40.

6. A preparation method of an epitaxial wafer of a light-emitting diode is characterized by comprising the following steps:

providing a substrate (10);

epitaxially growing an AlN buffer layer (20), an n-type layer (30), a multi-quantum well layer (40) and a p-type layer (50) on the substrate (10) in this order;

wherein the n-type layer (30) comprises a superlattice structure formed by alternately stacking a plurality of InN layers (31) and a plurality of AlInGaN layers (32), the AlInGaN layers (32) being doped with Si.

7. Preparation method according to claim 6, characterized in that the InN layer (31) is grown in a pure nitrogen atmosphere.

8. Preparation method according to claim 6, characterized in that the AlInGaN layer (32) is grown in a mixed atmosphere of hydrogen and nitrogen.

9. The production method according to any one of claims 6 to 8, wherein the growth temperature of the n-type layer (30) is 1000 ℃ to 1100 ℃.

10. The method according to any one of claims 6 to 8, wherein the growth pressure of the n-type layer (30) is 90mbar to 110 mbar.

Technical Field

The disclosure relates to the technical field of photoelectron manufacturing, and in particular relates to an epitaxial wafer of a light emitting diode and a preparation method thereof.

Background

The Light Emitting Diode (LED) is a new product with great influence in the photoelectronic industry, has the characteristics of small volume, long service life, rich and colorful colors, low energy consumption and the like, and is widely applied to the fields of illumination, display screens, signal lamps, backlight sources, toys and the like. The core structure of the LED is an epitaxial wafer, and the manufacturing of the epitaxial wafer has great influence on the photoelectric characteristics of the LED.

The epitaxial wafer typically includes a buffer layer, an n-type layer, a multiple quantum well layer, and a p-type layer. The n-type layer in the epitaxial wafer of the deep ultraviolet light emitting diode is usually an AlGaN layer.

In the deep ultraviolet light emitting diode, in order to achieve a high carrier concentration, the concentration of a dopant is generally increased, but this easily causes the AlGaN crystal quality to be deteriorated, the density of defects (mainly including vacancies and their compounds, impurities, dislocations, etc.) to be increased, the compensation effect to be intensified, and the carrier mobility to be reduced, thereby causing the conductivity of the n-type layer to be reduced, and reducing the electrical injection efficiency and the light emitting efficiency of the deep ultraviolet light emitting diode.

Disclosure of Invention

The embodiment of the disclosure provides an epitaxial wafer of a light emitting diode and a preparation method thereof, which can improve the conductivity of an n-type layer in the epitaxial wafer of the deep ultraviolet light emitting diode and is beneficial to improving the electrical injection efficiency and the light emitting efficiency of the deep ultraviolet light emitting diode. The technical scheme is as follows:

in one aspect, the embodiment of the present disclosure provides an epitaxial wafer of a light emitting diode, the epitaxial wafer including a substrate, and an AlN buffer layer, an n-type layer, a multiple quantum well layer, and a p-type layer sequentially formed on the substrate, wherein the n-type layer includes a superlattice structure formed by alternately stacking a plurality of InN layers and a plurality of AlInGaN layers, and the AlInGaN layers are doped with Si.

Optionally, the doping concentration of Si in the AlInGaN layer is 8 × 10¹⁷cm^-3～2×10¹⁸cm^-3。

Optionally, the thickness of the n-type layer is 1.5 μm to 2 μm.

Optionally, the InN layer has a thickness of 10nm to 20nm, and the AlInGaN layer has a thickness of 10nm to 20 nm.

Optionally, the number of cycles of the superlattice structure is 20-40.

On the other hand, the embodiment of the present disclosure further provides a preparation method of an epitaxial wafer of a light emitting diode, where the preparation method includes:

providing a substrate;

and epitaxially growing an AlN buffer layer, an n-type layer, a multi-quantum well layer and a p-type layer on the substrate in sequence, wherein the n-type layer comprises a superlattice structure formed by alternately laminating a plurality of InN layers and a plurality of AlInGaN layers, and the AlInGaN layers are doped with Si.

Optionally, the InN layer is grown in a pure nitrogen atmosphere.

Optionally, the AlInGaN layer is grown in a mixed atmosphere of hydrogen and nitrogen.

Optionally, the growth temperature of the n-type layer is 1000 ℃ to 1100 ℃.

Optionally, the growth pressure of the n-type layer is 90mbar to 110 mbar.

The beneficial effects brought by the technical scheme provided by the embodiment of the disclosure at least comprise:

the superlattice structure formed by alternately laminating a plurality of InN layers and a plurality of AlInGaN layers is used as an n-type layer, wherein the AlInGaN layers are doped with Si, the Si and the In the AlInGaN layers form a Si-In co-doped structure, and the Si-In co-doped structure can effectively inhibit the formation of a deep acceptor center, so that the self-compensation effect is reduced, the mobility of carriers is improved, the InN material also has good electron transport performance, and the improvement of the carrier mobility is facilitated, so that the conductivity of the n-type layer is improved, and the electric injection efficiency and the luminous efficiency of the deep ultraviolet light-emitting diode are improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of an epitaxial wafer of a light emitting diode provided in an embodiment of the present disclosure;

fig. 2 is a flowchart of a method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;

fig. 3 is a flowchart of another method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;

fig. 4 is a schematic view illustrating a manufacturing process of an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;

fig. 5 is a schematic view illustrating a manufacturing process of an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;

fig. 6 is a schematic view illustrating a manufacturing process of an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;

fig. 7 is a schematic view illustrating a process for preparing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;

fig. 8 is a schematic view illustrating a process for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;

fig. 9 is a schematic view of a process for preparing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure.

Detailed Description

To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

Fig. 1 is a schematic structural diagram of an epitaxial wafer of a light emitting diode provided in an embodiment of the present disclosure. As shown in fig. 1, the epitaxial wafer includes a substrate 10, and an AlN buffer layer 20, an n-type layer 30, a multiple quantum well layer 40, and a p-type layer 50 formed in this order on the substrate 10.

Wherein the n-type layer 30 includes a superlattice structure formed by alternately stacking a plurality of InN layers 31 and a plurality of AlInGaN layers 32, and the AlInGaN layers 32 are doped with Si.

The superlattice structure formed by alternately laminating a plurality of InN layers and a plurality of AlInGaN layers is used as an n-type layer, wherein the AlInGaN layers are doped with Si, the Si and the In the AlInGaN layers form a Si-In co-doped structure, and the Si-In co-doped structure can effectively inhibit the formation of a deep acceptor center, so that the self-compensation effect is reduced, the mobility of carriers is improved, the InN material also has good electron transport performance, and the improvement of the carrier mobility is facilitated, so that the conductivity of the n-type layer is improved, and the electric injection efficiency and the luminous efficiency of the deep ultraviolet light-emitting diode are improved.

Illustratively, the substrate 10 is a sapphire substrate, a silicon substrate, or a silicon carbide substrate. The substrate 10 may be a flat substrate or a patterned substrate.

As an example, in the embodiments of the present disclosure, the substrate 10 is a sapphire substrate. The sapphire substrate is a common substrate, the technology is mature, and the cost is low. The substrate can be a patterned sapphire substrate or a sapphire flat sheet substrate.

The thickness of the AlN buffer layer 20 may be 1 μm to 5 μm, the grown AlN buffer layer 20 has different thicknesses, and the quality of the finally formed epitaxial layer may also be different, if the AlN buffer layer 20 is too thin, the surface of the AlN buffer layer 20 may be loose and rough, which may not provide a good template for the growth of the subsequent structure, and as the thickness of the AlN buffer layer 20 increases, the surface of the AlN buffer layer 20 gradually becomes more compact and flat, which is beneficial to the growth of the subsequent structure, but if the AlN buffer layer 20 is too thick, the surface of the AlN buffer layer 20 may be too compact, which is not beneficial to the growth of the subsequent structure, and may not reduce the lattice defects in the epitaxial layer.

As an example, in the embodiment of the present disclosure, the AlN buffer layer 20 has a thickness of 2.5 μm.

Alternatively, the thickness of the n-type layer 30 may be 1.5 μm to 2 μm, and in the disclosed embodiment, the thickness of the n-type layer 30 is 1.05 μm.

Optionally, the InN layer 31 has a thickness of 10nm to 20 nm. The thickness of the AlInGaN layer 32 is 10nm to 20 nm.

The InN layer 31 is too thin to exhibit good electron transport performance, and the InN layer 31 is too thick to increase lattice mismatch with AlN material, which is not favorable for the growth of subsequent materials. The thickness of the AlInGaN layer 32 is too thin, which is not favorable for current spreading, and may result in a higher voltage of the LED device, and the thickness of the AlInGaN layer 32 is too thick, which may result in a higher manufacturing cost.

The InN layer 31 and AlInGaN layer 32 may be the same or different in thickness. In the disclosed embodiment, the thickness of the AlInGaN layer 32 is greater than the thickness of the InN layer 31.

As an example, in the embodiments of the present disclosure, the InN layer 31 has a thickness of 15 nm. The thickness of the AlInGaN layer 32 is 20 nm.

Optionally, the number of cycles of the superlattice structure is 20-40.

Under the condition that the thicknesses of the InN layer 31 and the AlInGaN layer 32 are fixed, the number of cycles is set to be 20-40, the n-type layer 30 can be guaranteed to have better current expansion performance and better crystal quality, the expansion performance of current can be reduced due to the fact that the number of cycles is too small, voltage of an LED device is high, the number of cycles is too large, and manufacturing cost can be increased.

By way of example, in embodiments of the present disclosure, the number of cycles of the superlattice structure is 30.

Note that fig. 1 shows only a part of the structure of the n-type layer 30, and is not intended to limit the number of cycles in which the InN layer 31 and the AlInGaN layer 32 are alternately stacked, and the AlInGaN layer 32 may be grown on the AlN buffer layer 20 when the n-type layer 30 is grown.

In the n-type layer 30, a layer in contact with the AlN buffer layer 20 may be an InN layer 31 or an AlInGaN layer 32.

Optionally, the doping concentration of Si in the AlInGaN layer 32 is 8 × 10¹⁷cm^-3～2×10¹⁸cm^-3. Too high a doping concentration of Si reduces the crystal quality and leads to an increase in defects, and too low a doping concentration of Si reduces the conductivity of the n-type layer 30. The doping concentration of Si is controlled to 8 x 10¹⁷cm^-3～2×10¹⁸cm^-3The n-type layer 30 can be made to have a good crystal quality while also having sufficient conductivity.

As an example, in the disclosed embodiment, the doping concentration of Si in the AlInGaN layer 32 is 10¹⁸cm^-3。

Optionally, the MQW layer 40 comprises 3-8 Al_xGa_1-xN quantum well layer 41 and Al_yGa_1-yAnd an N quantum barrier layer 42, wherein x is more than 0 and less than y is less than 1. That is, the MQW layer 40 includes 3 to 8 periods of Al alternately stacked_xGa_1-xN quantum well layer 41 and Al_yGa_1-yN quantum barrier layer 42.

As an example, in the embodiment of the present disclosure, the multiple quantum well layer 40 includes 5 periods of Al alternately stacked_xGa_1-xN quantum well layer 41 and Al_yGa_1-yN quantum barrier layer 42.

Alternatively, Al_xGa_1-xThe thickness of the N quantum well layer 41 may be 2nm to 4 nm. Al (Al)_yGa_1-yThe thickness of N quantum barrier layer 42 may be 9-14 nm.

Exemplarily, in the embodiments of the present disclosure, Al_xGa_1-xThe thickness of the N quantum well layer 41 was 3 nm. Al (Al)_yGa_1-yThe thickness of N quantum barrier layer 42 is 11 nm.

Note that fig. 1 shows only a partial structure of the multiple quantum well layer 40, and is not intended to limit Al_xGa_1-xN quantum well layer 41 and Al_yGa_1-yThe number of cycles of the N quantum barrier layers 42 alternately stacked, and Al may be grown on the N-type layer 30 in the case of growing the multiple quantum well layer 40_yGa_1-yN quantum barrier layer 42.

In the embodiment of the present disclosure, the p-type layer 50 includes a p-type barrier layer 51, a p-type AlGaN layer 52, and a p-type GaN layer 53 sequentially stacked on the multiple quantum well layer 40. The p-type barrier layer 51, the p-type AlGaN layer 52, and the p-type GaN layer 53 are all Mg-doped.

Illustratively, the p-type barrier layer 51 is a p-type AlGaN barrier layer.

The p-type AlGaN barrier layer may have a thickness of 5nm to 15 nm. As an example, in the embodiments of the present disclosure, the thickness of the p-type AlGaN barrier layer is 10 nm. If the thickness of the p-type AlGaN blocking layer is too thin, the blocking effect on electrons is reduced, and if the thickness of the p-type AlGaN blocking layer is too thick, the absorption of light by the p-type AlGaN blocking layer is increased, which reduces the light emission efficiency of the LED.

In some examples, the p-type AlGaN layer 52 has a thickness of 20nm to 30 nm. As an example, in the disclosed embodiment, the thickness of the p-type AlGaN layer 52 is 25 nm.

Alternatively, the thickness of the p-type GaN layer 53 may be 20nm to 70 nm. As an example, in the embodiments of the present disclosure, the thickness of the p-type GaN layer 53 is 50 nm.

Fig. 2 is a flowchart of a method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure. The method is used to manufacture the epitaxial wafer shown in fig. 1. As shown in fig. 2, the manufacturing method includes:

s11: a substrate 10 is provided.

S12: an AlN buffer layer 20, an n-type layer 30, a multiple quantum well layer 40, and a p-type layer 50 are epitaxially grown in this order on a substrate 10.

Wherein the n-type layer 30 includes a superlattice structure formed by alternately stacking a plurality of InN layers 31 and a plurality of AlInGaN layers 32, and the AlInGaN layers 32 are doped with Si.

The superlattice structure formed by alternately laminating a plurality of InN layers and a plurality of AlInGaN layers is used as an n-type layer, wherein the AlInGaN layers are doped with Si, the Si and the In the AlInGaN layers form a Si-In co-doped structure, and the Si-In co-doped structure can effectively inhibit the formation of a deep acceptor center, so that the self-compensation effect is reduced, the mobility of carriers is improved, the InN material also has good electron transport performance, and the improvement of the carrier mobility is facilitated, so that the conductivity of the n-type layer is improved, and the electric injection efficiency and the luminous efficiency of the deep ultraviolet light-emitting diode are improved.

Fig. 3 is a flowchart of another method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure, where the method is used for manufacturing the epitaxial wafer shown in fig. 1. The manufacturing method provided in fig. 3 will be described in detail with reference to fig. 4 to 9:

s21: a substrate 10 is provided.

Alternatively, the substrate 10 is a sapphire substrate, a silicon substrate, or a silicon carbide substrate. The substrate 10 may be a flat substrate or a patterned substrate.

As an example, in the embodiments of the present disclosure, the substrate 10 is a sapphire substrate. The sapphire substrate is a common substrate, the technology is mature, and the cost is low. The substrate can be a patterned sapphire substrate or a sapphire flat sheet substrate.

In step S21, the sapphire substrate may be pretreated, placed in an MOCVD (Metal-organic Chemical Vapor Deposition) reaction chamber, and subjected to a baking process for 12 to 18 minutes. As an example, in the embodiment of the present disclosure, the baking process was performed on the sapphire substrate for 15 minutes.

Specifically, the baking temperature can be 1000-1200 ℃, the pressure in the MOCVD reaction chamber during baking can be 100-200 mbar, and H is introduced into the reaction chamber at a speed of 100-130L/min during baking treatment₂To perform a baking treatment in a hydrogen atmosphere.

S22: an AlN buffer layer 20 is epitaxially grown on the substrate 10.

As shown in fig. 4, an AlN buffer layer 20 is grown on the substrate 10. The AlN buffer layer 20 grown in step S22 may be a high-temperature AlN buffer layer.

The thickness of the AlN buffer layer 20 may be 1 μm to 5 μm, the grown AlN buffer layer 20 has different thicknesses, and the quality of the finally formed epitaxial layer may also be different, if the AlN buffer layer 20 is too thin, the surface of the AlN buffer layer 20 may be loose and rough, which may not provide a good template for the growth of the subsequent structure, and as the thickness of the AlN buffer layer 20 increases, the surface of the AlN buffer layer 20 gradually becomes more dense and flat, which is beneficial to the growth of the subsequent structure, but if the AlN buffer layer 20 is too thick, the surface of the AlN buffer layer 20 may be too dense, which is not beneficial to the growth of the subsequent structure, and may not reduce the lattice defects in the epitaxial layer.

Alternatively, the growth temperature of the AlN buffer layer 20 is not lower than 1300 ℃. As an example, in the embodiment of the present disclosure, the growth temperature of the AlN buffer layer 20 is 1350 ℃.

Optionally, the growth pressure of the AlN buffer layer 20 is 50mbar to 200 mbar. As an example, in the embodiments of the present disclosure, the growth pressure of the AlN buffer layer 20 is 150 mbar.

S23: an n-type layer 30 is grown on the AlN buffer layer 20.

As shown in fig. 5, an n-type layer 30 is grown on the AlN buffer layer 20.

The n-type layer 30 includes a superlattice structure formed by alternately stacking a plurality of InN layers 31 and a plurality of AlInGaN layers 32. The InN material has good electron transport performance and is beneficial to improving the carrier mobility, so that the conductivity of an n-type layer is improved, and the electric injection efficiency and the luminous efficiency of the deep ultraviolet light-emitting diode are improved.

Fig. 5 shows only a part of the structure of the n-type layer 30, and is not intended to limit the number of cycles in which the InN layer 31 and the AlInGaN layer 32 are alternately stacked, and in the case of growing the n-type layer 30, the AlInGaN layer 32 may be grown on the AlN buffer layer 20.

Alternatively, the AlInGaN layer 32 is grown in a mixed atmosphere of hydrogen and nitrogen.

The nitrogen has the characteristics of small diffusion coefficient, safety and low cost, and the hydrogen can be favorable for improving the crystal quality to grow the AlInGaN layer 32 with better quality.

Alternatively, InN layer 31 is grown in a pure nitrogen atmosphere.

When the InN layer 31 is grown, a pure nitrogen atmosphere is adopted without introducing hydrogen, so that the damage of the hydrogen to In-N chemical bonds is avoided, and the incorporation efficiency of In at a high temperature is improved.

In the n-type layer 30, the InN layer 31 and the AlInGaN layer 32 may be grown at the same temperature or at different temperatures. As an example, in the embodiment of the present disclosure, the growth temperatures of the InN layer 31 and the AlInGaN layer 32 are the same, and the InN layer 31 and the AlInGaN layer 32 are alternately grown at the same growth temperature, which is more convenient to operate and simpler in process.

Optionally, the growth temperature of the n-type layer 30 is 1000 ℃ to 1100 ℃. As an example, in the disclosed embodiment, the growth temperature of the n-type layer 30 is 1060 ℃.

In the n-type layer 30, the InN layer 31 and the AlInGaN layer 32 may be grown under the same or different growth pressure. As an example, in the embodiment of the present disclosure, the growth pressure of the InN layer 31 and the AlInGaN layer 32 is also the same, and the InN layer 31 and the AlInGaN layer 32 are alternately grown with the same growth pressure, which is more convenient to operate and simpler in process.

Alternatively, the growth pressure of the n-type layer 30 may be 90mbar to 110 mbar. As an example, in the disclosed embodiment, the growth pressure of the n-type layer 30 is 100 mbar.

Alternatively, the Si doping concentration in the AlInGaN layer 32 may be 8 × 10¹⁷cm^-3～2×10¹⁸cm^-3. As an example, in the disclosed embodiment, the Si doping concentration in the AlInGaN layer 32 is 1 × 10¹⁸cm^-3。

Si and In the AlInGaN layer form a Si-In co-doped structure, and the Si-In co-doped structure can effectively inhibit the formation of a deep acceptor center, so that the self-compensation effect is reduced, and the mobility of carriers is improved.

The thickness of the n-type layer 30 may be 1.5 μm to 2 μm, and in the disclosed embodiment, the thickness of the n-type layer 30 is 1.05 μm.

In the n-type layer 30, the InN layer 31 has a thickness of 10nm to 20 nm. The thickness of the AlInGaN layer 32 is 10nm to 20 nm.

The InN layer 31 and AlInGaN layer 32 may be the same or different in thickness. As an example, in the embodiments of the present disclosure, the InN layer 31 has a thickness of 15 nm. The thickness of the AlInGaN layer 32 is 20 nm.

S24: a multiple quantum well layer 40 is grown on the n-type layer 30.

As shown in fig. 6, a multiple quantum well layer 40 is grown on the n-type layer 30.

In practice, the MQW layer 40 may include a plurality of layers of Al alternately stacked_xGa_1-xN quantum well layer 41 and multilayer Al_yGa_1-yAnd an N quantum barrier layer 42, wherein x is more than 0 and less than y is less than 1.

Alternatively, Al_xGa_1-xN quantum well layer 41 and Al_yGa_1-yThe number of cycles of alternately stacking N quantum barrier layers 42 may be 3 to 8. Exemplarily, in the embodiments of the present disclosure, Al_xGa_1-xN quantum well layer 41 and Al_yGa_1-yThe number of cycles of N quantum barrier layers 42 stacked alternately is 5.

Note that fig. 6 shows only a partial structure of the multiple quantum well layer 40, and is not intended to limit Al_xGa_1-xN quantum well layer 41 and Al_yGa_1-yN quantum barrier layer 42 intersectionInstead of the number of cycles of the layers, Al may be grown on the n-type layer 30 in the growth of the multiple quantum well layer 40_yGa_1-yN quantum barrier layer 42.

Alternatively, Al_xGa_1-xThe thickness of the N quantum well layer 41 may be 2nm to 4 nm. Al (Al)_yGa_1-yThe thickness of N quantum barrier layer 42 may be 9-14 nm.

Exemplarily, in the embodiments of the present disclosure, Al_xGa_1-xThe thickness of the N quantum well layer 41 was 3 nm. Al (Al)_yGa_1-yThe thickness of N quantum barrier layer 42 is 11 nm.

After the mqw layer 40 is grown, a p-type layer 50 is grown on the mqw layer 40, and in the embodiment of the present disclosure, the p-type layer 50 includes a p-type barrier layer 51, a p-type AlGaN layer 52, and a p-type GaN layer 53 sequentially stacked on the mqw layer 40. The p-type barrier layer 51, the p-type AlGaN layer 52, and the p-type GaN layer 53 are all Mg-doped. The growth of the p-type layer 50 includes steps S25 to S27 as follows.

S25: a p-type barrier layer 51 is grown on the multiple quantum well layer 40.

As shown in fig. 7, a p-type barrier layer 51 is grown on the multiple quantum well layer 40.

Alternatively, the p-type barrier layer 51 may be a p-type AlGaN barrier layer.

Specifically, the growth temperature of the p-type barrier layer 51 may be 960 ℃ to 990 ℃, and in the embodiment of the present disclosure, the growth temperature of the p-type barrier layer 51 is 980 ℃, as an example.

Specifically, the growth pressure of the p-type barrier layer 51 may be 100mbar to 200 mbar. As an example, in the embodiments of the present disclosure, the growth pressure of the p-type barrier layer 51 is 150 mbar.

Alternatively, the thickness of the p-type barrier layer 51 may be 5nm to 15 nm. As an example, in the embodiment of the present disclosure, the thickness of the p-type barrier layer 51 is 10 nm. If the thickness of the p-type blocking layer 51 is too thin, the blocking effect on electrons is reduced, and if the thickness of the p-type blocking layer 51 is too thick, the absorption of light by the p-type blocking layer 51 is increased, thereby reducing the light emission efficiency of the LED.

S26: a p-type AlGaN layer 52 is grown on the p-type barrier layer 51.

As shown in fig. 8, a p-type AlGaN layer 52 is grown on the p-type barrier layer 51.

Specifically, the growth temperature of the p-type AlGaN layer 52 may be 880 ℃ to 920 ℃, and in the embodiment of the present disclosure, the growth temperature of the p-type AlGaN layer 52 is 900 ℃, as an example.

Specifically, the growth pressure of the p-type AlGaN layer 52 may be 180mbar to 220 mbar. As an example, in the embodiments of the present disclosure, the growth pressure of the p-type AlGaN layer 52 is 200 mbar.

Alternatively, the thickness of the p-type AlGaN layer 52 may be 20nm to 30 nm. As an example, in the disclosed embodiment, the thickness of the p-type AlGaN layer 52 is 25 nm.

S27: a p-type GaN layer 53 is grown on the p-type AlGaN layer 52.

As shown in fig. 9, a p-type GaN layer 53 is grown on the p-type AlGaN layer 52.

Alternatively, the growth temperature of the p-type GaN layer 53 may be 800 deg.C to 900 deg.C. As an example, in the embodiment of the present disclosure, the growth temperature of the p-type GaN layer 53 is 850 ℃.

Alternatively, the growth pressure of the p-type GaN layer 53 may be 250mbar to 350 mbar. As an example, in the embodiments of the present disclosure, the growth pressure of the p-type GaN layer 53 is 300 mbar.

Alternatively, the thickness of the p-type GaN layer 53 may be 20nm to 70 nm. As an example, in the embodiments of the present disclosure, the thickness of the p-type GaN layer 53 is 50 nm.

In growing the p-type barrier layer 51, the p-type AlGaN layer 52, and the p-type GaN layer 53, Mg doping is performed using cyclopentadienyl magnesium with trimethyl gallium or triethyl gallium as a gallium source.

S28: and annealing the epitaxial wafer.

Alternatively, the annealing may be performed for 30 minutes under nitrogen gas atmosphere to end the growth of the epitaxial wafer. And then the heating system and the gas supply system are closed, and the temperature of the reaction cavity is reduced to room temperature.

Annealing the epitaxial wafer, and performing subsequent processing on the epitaxial wafer to prepare the LED.

In particular implementations, embodiments of the present disclosure may employ high purity H₂Or/and N₂As carrier gas, TEGa or TMGa is used as Ga source and TMIn is used asIn source, SiH₄As n-type dopant TMAl as aluminium source, Cp₂Mg as a p-type dopant.

The above description is intended to be exemplary only and not to limit the present disclosure, and any modification, equivalent replacement, or improvement made without departing from the spirit and scope of the present disclosure is to be considered as the same as the present disclosure.