阅读说明：本技术 一种陶瓷片及其加工工艺 (Ceramic wafer and processing technology thereof ) 是由 柴辽江 于 2020-04-14 设计创作，主要内容包括：本发明公开了一种陶瓷片及其加工工艺,具体涉及陶瓷材料领域,其中所使用原料(按重量份数计)包括：铜(Cu)粉末38-48份、铁(Fe)粉末15-20份、镍(Ni)粉末8-15份、锡(Sn)粉末10-18份、钴(Co)粉末6-14份、P22加强合金粉4-8份、铁镍铬硼合金粉末2-6份、粘合剂3-8份。本发明通过在原材料中加入铁镍铬硼合金粉末,可在保证制得的陶瓷片中的金刚石粒度等级含量不变的前提下,降低了添加原料中的Co的使用量,可提高制得陶瓷片的整体硬度和强度,从而保证切割时间变短,且损耗量变小。(The invention discloses a ceramic chip and a processing technology thereof, and particularly relates to the field of ceramic materials, wherein the used raw materials (in parts by weight) comprise: 38-48 parts of copper (Cu) powder, 15-20 parts of iron (Fe) powder, 8-15 parts of nickel (Ni) powder, 10-18 parts of tin (Sn) powder, 6-14 parts of cobalt (Co) powder, 4-8 parts of P22 reinforced alloy powder, 2-6 parts of iron nickel chromium boron alloy powder and 3-8 parts of adhesive. According to the invention, the iron-nickel-chromium-boron alloy powder is added into the raw material, so that the usage amount of Co in the added raw material is reduced and the overall hardness and strength of the prepared ceramic wafer can be improved on the premise of ensuring that the diamond granularity level content in the prepared ceramic wafer is not changed, thereby ensuring that the cutting time is shortened and the loss is reduced.)

1. A ceramic wafer, characterized in that: wherein the used raw materials (by weight portion) comprise: 38-48 parts of copper (Cu) powder, 15-20 parts of iron (Fe) powder, 8-15 parts of nickel (Ni) powder, 10-18 parts of tin (Sn) powder, 6-14 parts of cobalt (Co) powder, 4-8 parts of P22 reinforced alloy powder, 2-6 parts of iron nickel chromium boron alloy powder and 3-8 parts of adhesive.

2. A ceramic plate as claimed in claim 1, characterized in that: wherein the used raw materials (by weight portion) comprise: 38 parts of copper (Cu) powder, 15 parts of iron (Fe) powder, 8 parts of nickel (Ni) powder, 10 parts of tin (Sn) powder, 6 parts of cobalt (Co) powder, 4 parts of P22 reinforced alloy powder, 2 parts of iron-nickel-chromium-boron alloy powder and 3 parts of a binder.

3. A ceramic plate as claimed in claim 1, characterized in that: wherein the used raw materials (by weight portion) comprise: 43 parts of copper (Cu) powder, 17.5 parts of iron (Fe) powder, 11.5 parts of nickel (Ni) powder, 14 parts of tin (Sn) powder, 10 parts of cobalt (Co) powder, 6 parts of P22 reinforced alloy powder, 4 parts of iron-nickel-chromium-boron alloy powder and 5.5 parts of a binder.

4. A ceramic plate as claimed in claim 1, characterized in that: wherein the used raw materials (by weight portion) comprise: 48 parts of copper (Cu) powder, 20 parts of iron (Fe) powder, 15 parts of nickel (Ni) powder, 18 parts of tin (Sn) powder, 14 parts of cobalt (Co) powder, 8 parts of P22 reinforced alloy powder, 6 parts of iron-nickel-chromium-boron alloy powder and 8 parts of binder.

5. A ceramic plate as claimed in claim 1, characterized in that: the adhesive is any one of polymethyl methacrylate, polyurethane resin or phenolic resin.

6. The processing technology of the ceramic wafer is characterized in that: the processing technology of the ceramic wafer comprises the following specific steps:

step one, screening and grinding raw materials: putting copper (Cu) powder, iron (Fe) powder, nickel (Ni) powder, tin (Sn) powder, cobalt (Co) powder, P22 reinforced alloy powder and iron-nickel-chromium-boron alloy powder into a vacuum ball milling tank according to the proportion to obtain a mixture;

step two, mixing: putting the mixture prepared in the step one into a stirring device, filling argon into a stirring space, then adding a binder in a corresponding proportion, and uniformly stirring for 8-15min to prepare a blank;

thirdly, putting the blank obtained in the second step into a die for static pressure forming to obtain a biscuit, and then putting the biscuit into a drying oven for drying;

and step four, performing discharge plasma sintering on the dried biscuit obtained in the step three to obtain a ceramic wafer blank, and then performing size and surface finish machining on the ceramic wafer blank in a plasma processing mode.

7. The processing technology of the ceramic wafer according to claim 6, characterized in that: and in the second step, the stirring speed is set to be 180-260 r/min.

8. The processing technology of the ceramic wafer according to claim 6, characterized in that: the treatment conditions of the drying box in the third step are as follows: the pressure is 2.5-4MPa, the treatment temperature is set to be 80-120 ℃, and the treatment time is set to be 1.2-2.6 h.

9. The processing technology of the ceramic wafer according to claim 6, characterized in that: the firing conditions of the discharge plasma in the fourth step are as follows: the temperature is 1650-.

Technical Field

The invention relates to the technical field of ceramic materials, in particular to a ceramic chip and a processing technology thereof.

Background

Ceramics are a generic term for ceramics and porcelain. The pottery was invented in the neolithic age about 8000 years ago. Common ceramic materials are clay, alumina, kaolin, and the like. Ceramic materials generally have a high hardness but a poor plasticity. Besides being used for tableware and decoration, ceramics play an important role in the development of science and technology. The ceramic raw material is extracted from a large amount of clay which is the original resource of the earth. The clay has toughness, can be plasticized when meeting water at normal temperature, can be slightly dried for carving, and can be completely dried for grinding; when the mixture is burnt to 700 ℃, the pottery can be made into pottery which can be filled with water; when the ceramic material is burnt to 1230 ℃, the ceramic material is vitrified, almost completely does not absorb water, and is high-temperature resistant and corrosion resistant. The flexibility of its usage has various creative applications in today's cultural science and technology. A pottery is invented. The ceramic materials are mostly oxides, nitrides, borides, carbides, and the like.

The ceramic processing is that a workshop specially processes ceramics. Ceramic machining requires special machining tools and machining processes. The processing of ceramic materials is a special case of mechanical processing, and a general machining workshop does not have the capability of ceramic processing. In the existing ceramic processing technology, the ceramic wafer can be fired by metal powder, and the ceramic wafer obtained by firing has the advantages of being wear-resistant, high in hardness, impact-resistant, light in weight and the like, and can be used as a cutting blade.

Disclosure of Invention

In order to overcome the above defects in the prior art, embodiments of the present invention provide a ceramic wafer and a processing process thereof, and the technical problem to be solved by the present invention is: how to improve the service life of the existing ceramic plate.

In order to achieve the purpose, the invention provides the following technical scheme: a ceramic sheet, wherein the raw materials (by weight) used comprise: 38-48 parts of copper (Cu) powder, 15-20 parts of iron (Fe) powder, 8-15 parts of nickel (Ni) powder, 10-18 parts of tin (Sn) powder, 6-14 parts of cobalt (Co) powder, 4-8 parts of P22 reinforced alloy powder, 2-6 parts of iron nickel chromium boron alloy powder and 3-8 parts of adhesive.

In a preferred embodiment, the raw materials used therein (in parts by weight) include: 38 parts of copper (Cu) powder, 15 parts of iron (Fe) powder, 8 parts of nickel (Ni) powder, 10 parts of tin (Sn) powder, 6 parts of cobalt (Co) powder, 4 parts of P22 reinforced alloy powder, 2 parts of iron-nickel-chromium-boron alloy powder and 3 parts of a binder.

In a preferred embodiment, the raw materials used therein (in parts by weight) include: 43 parts of copper (Cu) powder, 17.5 parts of iron (Fe) powder, 11.5 parts of nickel (Ni) powder, 14 parts of tin (Sn) powder, 10 parts of cobalt (Co) powder, 6 parts of P22 reinforced alloy powder, 4 parts of iron-nickel-chromium-boron alloy powder and 5.5 parts of a binder.

In a preferred embodiment, the raw materials used therein (in parts by weight) include: 48 parts of copper (Cu) powder, 20 parts of iron (Fe) powder, 15 parts of nickel (Ni) powder, 18 parts of tin (Sn) powder, 14 parts of cobalt (Co) powder, 8 parts of P22 reinforced alloy powder, 6 parts of iron-nickel-chromium-boron alloy powder and 8 parts of binder.

In a preferred embodiment, the binder is provided as any one of polymethyl methacrylate, polyurethane resin, or phenol resin.

A processing technology of a ceramic wafer comprises the following specific steps:

step one, screening and grinding raw materials: putting copper (Cu) powder, iron (Fe) powder, nickel (Ni) powder, tin (Sn) powder, cobalt (Co) powder, P22 reinforced alloy powder and iron-nickel-chromium-boron alloy powder into a vacuum ball milling tank according to the proportion to obtain a mixture;

step two, mixing: putting the mixture prepared in the step one into a stirring device, filling argon into a stirring space, then adding a binder in a corresponding proportion, and uniformly stirring for 8-15min to prepare a blank;

thirdly, putting the blank obtained in the second step into a die for static pressure forming to obtain a biscuit, and then putting the biscuit into a drying oven for drying;

and step four, performing discharge plasma sintering on the dried biscuit obtained in the step three to obtain a ceramic wafer blank, and then performing size and surface finish machining on the ceramic wafer blank in a plasma processing mode.

In a preferred embodiment, the stirring speed in the second step is set to 180-.

In a preferred embodiment, the treatment conditions of the drying oven in the third step are: the pressure is 2.5-4MPa, the treatment temperature is set to be 80-120 ℃, and the treatment time is set to be 1.2-2.6 h.

In a preferred embodiment, the discharge plasma firing conditions in the fourth step are: the temperature is 1650-.

The invention has the technical effects and advantages that:

according to the invention, the iron-nickel-chromium-boron alloy powder is added into the raw material, so that the usage amount of Co in the added raw material is reduced and the overall hardness and strength of the prepared ceramic wafer can be improved on the premise of ensuring that the diamond granularity level content in the prepared ceramic wafer is not changed, thereby ensuring that the cutting time is shortened and the loss is reduced.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Example 1:

the invention provides a ceramic chip, wherein the used raw materials (by weight) comprise: 38-48 parts of copper (Cu) powder, 15-20 parts of iron (Fe) powder, 8-15 parts of nickel (Ni) powder, 10-18 parts of tin (Sn) powder, 6-14 parts of cobalt (Co) powder, 4-8 parts of P22 reinforced alloy powder, 2-6 parts of iron nickel chromium boron alloy powder and 3-8 parts of adhesive;

specifically, in this embodiment, the raw materials (by weight) used include: 38 parts of copper (Cu) powder, 15 parts of iron (Fe) powder, 8 parts of nickel (Ni) powder, 10 parts of tin (Sn) powder, 6 parts of cobalt (Co) powder, 4 parts of P22 reinforced alloy powder, 2 parts of iron-nickel-chromium-boron alloy powder and 3 parts of adhesive;

the adhesive is any one of polymethyl methacrylate, polyurethane resin or phenolic resin;

a processing technology of a ceramic wafer comprises the following specific steps:

step one, screening and grinding raw materials: putting copper (Cu) powder, iron (Fe) powder, nickel (Ni) powder, tin (Sn) powder, cobalt (Co) powder, P22 reinforced alloy powder and iron-nickel-chromium-boron alloy powder into a vacuum ball milling tank according to the proportion to obtain a mixture;

step two, mixing: putting the mixture prepared in the step one into a stirring device, filling argon into a stirring space, then adding a binder in a corresponding proportion, uniformly stirring the mixture for 8-15min at a stirring speed of 180 plus 260r/min to prepare a blank, and adding the binder in a proper proportion into the components of the raw materials in the stirring process to ensure that the mixed material powder can be prepared into an integrated ingredient, thereby facilitating the subsequent preparation of the blank;

step three, putting the blank obtained in the step two into a die for static pressure forming to obtain a biscuit, and then putting the biscuit into a drying oven for drying, wherein the processing conditions of the drying oven are as follows: the pressure is 2.5-4MPa, the treatment temperature is set to be 80-120 ℃, the treatment time is set to be 1.2-2.6h, the whole humidity of the biscuit can be reduced by drying pretreatment, and the influence on the yield caused by the cracks generated on the ceramic wafer when high-temperature sintering is directly carried out is avoided;

step four, sintering the dried biscuit obtained in the step three by using discharge plasma, wherein the firing conditions of the discharge plasma are as follows: the temperature is 1650-.

Example 2:

the invention provides a ceramic chip, wherein the used raw materials (by weight) comprise: 38-48 parts of copper (Cu) powder, 15-20 parts of iron (Fe) powder, 8-15 parts of nickel (Ni) powder, 10-18 parts of tin (Sn) powder, 6-14 parts of cobalt (Co) powder, 4-8 parts of P22 reinforced alloy powder, 2-6 parts of iron nickel chromium boron alloy powder and 3-8 parts of adhesive;

specifically, in this embodiment, the raw materials (by weight) used include: 43 parts of copper (Cu) powder, 17.5 parts of iron (Fe) powder, 11.5 parts of nickel (Ni) powder, 14 parts of tin (Sn) powder, 10 parts of cobalt (Co) powder, 6 parts of P22 reinforced alloy powder, 4 parts of iron-nickel-chromium-boron alloy powder and 5.5 parts of a binder;

the adhesive is any one of polymethyl methacrylate, polyurethane resin or phenolic resin;

a processing technology of a ceramic wafer comprises the following specific steps:

step one, screening and grinding raw materials: putting copper (Cu) powder, iron (Fe) powder, nickel (Ni) powder, tin (Sn) powder, cobalt (Co) powder, P22 reinforced alloy powder and iron-nickel-chromium-boron alloy powder into a vacuum ball milling tank according to the proportion to obtain a mixture;

step two, mixing: putting the mixture prepared in the step one into a stirring device, filling argon into a stirring space, then adding a binder in a corresponding proportion, uniformly stirring the mixture for 8-15min at a stirring speed of 180 plus 260r/min to prepare a blank, and adding the binder in a proper proportion into the components of the raw materials in the stirring process to ensure that the mixed material powder can be prepared into an integrated ingredient, thereby facilitating the subsequent preparation of the blank;

step three, putting the blank obtained in the step two into a die for static pressure forming to obtain a biscuit, and then putting the biscuit into a drying oven for drying, wherein the processing conditions of the drying oven are as follows: the pressure is 2.5-4MPa, the treatment temperature is set to be 80-120 ℃, the treatment time is set to be 1.2-2.6h, the whole humidity of the biscuit can be reduced by drying pretreatment, and the influence on the yield caused by the cracks generated on the ceramic wafer when high-temperature sintering is directly carried out is avoided;

step four, sintering the dried biscuit obtained in the step three by using discharge plasma, wherein the firing conditions of the discharge plasma are as follows: the temperature is 1650-.

Example 3:

the invention provides a ceramic chip, wherein the used raw materials (by weight) comprise: 38-48 parts of copper (Cu) powder, 15-20 parts of iron (Fe) powder, 8-15 parts of nickel (Ni) powder, 10-18 parts of tin (Sn) powder, 6-14 parts of cobalt (Co) powder, 4-8 parts of P22 reinforced alloy powder, 2-6 parts of iron nickel chromium boron alloy powder and 3-8 parts of adhesive;

specifically, in this embodiment, the raw materials (by weight) used include: 48 parts of copper (Cu) powder, 20 parts of iron (Fe) powder, 15 parts of nickel (Ni) powder, 18 parts of tin (Sn) powder, 14 parts of cobalt (Co) powder, 8 parts of P22 reinforced alloy powder, 6 parts of iron-nickel-chromium-boron alloy powder and 8 parts of adhesive;

the adhesive is any one of polymethyl methacrylate, polyurethane resin or phenolic resin;

a processing technology of a ceramic wafer comprises the following specific steps:

step one, screening and grinding raw materials: putting copper (Cu) powder, iron (Fe) powder, nickel (Ni) powder, tin (Sn) powder, cobalt (Co) powder, P22 reinforced alloy powder and iron-nickel-chromium-boron alloy powder into a vacuum ball milling tank according to the proportion to obtain a mixture;

step two, mixing: putting the mixture prepared in the step one into a stirring device, filling argon into a stirring space, then adding a binder in a corresponding proportion, uniformly stirring the mixture for 8-15min at a stirring speed of 180 plus 260r/min to prepare a blank, and adding the binder in a proper proportion into the components of the raw materials in the stirring process to ensure that the mixed material powder can be prepared into an integrated ingredient, thereby facilitating the subsequent preparation of the blank;

step three, putting the blank obtained in the step two into a die for static pressure forming to obtain a biscuit, and then putting the biscuit into a drying oven for drying, wherein the processing conditions of the drying oven are as follows: the pressure is 2.5-4MPa, the treatment temperature is set to be 80-120 ℃, the treatment time is set to be 1.2-2.6h, the whole humidity of the biscuit can be reduced by drying pretreatment, and the influence on the yield caused by the cracks generated on the ceramic wafer when high-temperature sintering is directly carried out is avoided;

step four, sintering the dried biscuit obtained in the step three by using discharge plasma, wherein the firing conditions of the discharge plasma are as follows: the temperature is 1650-.

Example 4:

the invention provides a ceramic chip, wherein the used raw materials (by weight) comprise: 38-48 parts of copper (Cu) powder, 15-20 parts of iron (Fe) powder, 8-15 parts of nickel (Ni) powder, 10-18 parts of tin (Sn) powder, 6-14 parts of cobalt (Co) powder, 4-8 parts of P22 reinforced alloy powder, 2-6 parts of iron nickel chromium boron alloy powder and 3-8 parts of adhesive;

specifically, in this embodiment, the raw materials (by weight) used include: 43 parts of copper (Cu) powder, 17.5 parts of iron (Fe) powder, 11.5 parts of nickel (Ni) powder, 14 parts of tin (Sn) powder, 10 parts of cobalt (Co) powder, 6 parts of P22 reinforced alloy powder and 5.5 parts of a binder;

the adhesive is any one of polymethyl methacrylate, polyurethane resin or phenolic resin;

a processing technology of a ceramic wafer comprises the following specific steps:

step one, screening and grinding raw materials: putting copper (Cu) powder, iron (Fe) powder, nickel (Ni) powder, tin (Sn) powder, cobalt (Co) powder and P22 reinforced alloy powder into a vacuum ball milling tank according to the proportion to obtain a mixture;

step two, mixing: putting the mixture prepared in the step one into a stirring device, filling argon into a stirring space, then adding a binder in a corresponding proportion, uniformly stirring the mixture for 8-15min at a stirring speed of 180 plus 260r/min to prepare a blank, and adding the binder in a proper proportion into the components of the raw materials in the stirring process to ensure that the mixed material powder can be prepared into an integrated ingredient, thereby facilitating the subsequent preparation of the blank;

step three, putting the blank obtained in the step two into a die for static pressure forming to obtain a biscuit, and then putting the biscuit into a drying oven for drying, wherein the processing conditions of the drying oven are as follows: the pressure is 2.5-4MPa, the treatment temperature is set to be 80-120 ℃, the treatment time is set to be 1.2-2.6h, the whole humidity of the biscuit can be reduced by drying pretreatment, and the influence on the yield caused by the cracks generated on the ceramic wafer when high-temperature sintering is directly carried out is avoided;

step four, sintering the dried biscuit obtained in the step three by using discharge plasma, wherein the firing conditions of the discharge plasma are as follows: the temperature is 1650-.

The ceramic sheets prepared in the above examples 1 to 4 were respectively used to cut batch of 60cmx60cm ceramic tiles, and the ceramic sheets prepared in the four examples were respectively used in four groups to obtain the following data:

as can be seen from the above table, the raw materials in example 2 are mixed in a moderate proportion, the ceramic sheet prepared by using the formula has the lowest abrasion degree after cutting the same batch of ceramic tiles, and the ceramic sheet has a shorter time for single cutting of the ceramic tiles, so that the service life and the cutting efficiency of the ceramic sheet can be ensured.

And finally: the above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention are intended to be included in the scope of the present invention.