阅读说明：本技术 一种AlGaAs/AlGaInP混合材料的外延生长方法 (Epitaxial growth method of AlGaAs/AlGaInP mixed material ) 是由 马骁宇 赵碧瑶 熊聪 林楠 刘素平 仲莉 于 2020-03-30 设计创作，主要内容包括：本发明公开了一种AlGaAs/AlGaInP混合材料的外延生长方法,包括：在衬底表面生长AlGaAs材料；在衬底表面生长AlGaAs材料的过程中进行生长停顿,将反应腔室内As原子耗尽；以及生长停顿结束后在AlGaAs材料表面生长AlGaInP材料。本发明提出的方法,通过调整各元素组分,利用各自材料特点,能够减小混合材料界面处的缺陷和位错。(The invention discloses an epitaxial growth method of an AlGaAs/AlGaInP mixed material, which comprises the following steps: growing AlGaAs material on the surface of the substrate; stopping growth in the process of growing the AlGaAs material on the surface of the substrate to exhaust As atoms in the reaction chamber; and growing the AlGaInP material on the surface of the AlGaAs material after the growth pause is finished. The method provided by the invention can reduce the defects and dislocation at the interface of the mixed material by adjusting the components of each element and utilizing the characteristics of each material.)

1. An epitaxial growth method of AlGaAs/AlGaInP mixed material, comprising:

growing AlGaAs material on the surface of the substrate;

stopping growth in the process of growing the AlGaAs material on the surface of the substrate to exhaust As atoms in the reaction chamber; and

and growing the AlGaInP material on the surface of the A1GaAs material after the growth pause is finished.

2. The method of claim 1 in which the AlGaAs material is grown on the surface of the substrate by metal organic chemical vapor deposition.

3. The method of claim 2 in which the AlGaAs/AlGaInP mixture is grown on the surface of the substrate by metal organic chemical vapor deposition using TMGa, TMAl as the three-group source and AsH as the five-group source₃、AsH₃N type material dopant 2% SiH₄Or 200ppm of Si₂H₆The P-type AlGaAs dopant is DEZn or CCl₄The growth temperature is 650 to 750 ℃, the V/III ratio is 60 to 300, and the growth pressure is 50 to 100 mbar.

4. The method of epitaxial growth of AlGaAs/AlGaInP hybrid material according to claim 2, wherein the thickness of AlGaAs material is 0.5 to 5 μm.

5. The method of epitaxial growth of AlGaAs/AlGaInP hybrid material according to claim 1, wherein said stopping of growth during the growth of AlGaAs material on the surface of the substrate to deplete the reaction chamber of As atoms comprises:

and (3) stopping the V family source for 10-30 seconds to exhaust As atoms in the reaction chamber to realize growth pause.

6. The method of claim 1, wherein the AlGaInP material is grown on the surface of AlGaAs material after the growth stop is completed by sequentially growing N-AlGaInP material, GaInAsP material, AlGaInP material and P-AlGaAs material on the surface of AlGaAs material by metal organic chemical vapor deposition.

7. The method of epitaxial growth of AlGaAs/AlGaInP hybrid material as claimed in claim 6, wherein said growing N-AlGaInP material, GaInAsP material, AlGaInP material and P-AlGaAs material on the surface of AlGaAs material in this order comprises:

growing N-AlGaInP material on the surface of AlGaAs material by vapor phase epitaxy growth method, wherein the three sources are TMGa, TMAl and TMIn, and the five sources are PH₃，AsH₃Using 2% SiH as N-type dopant₄Or 200ppm of Si₂H₆The total H2 flow rate is 5-50L/min, the growth temperature is 630-720 ℃, the reaction chamber pressure is 50-100 mbar, the V/III ratio is 60-300, and the growth rate is 18-72 nm/min.

8. The method of epitaxial growth of AlGaAs/AlGaInP hybrid material according to claim 7, wherein the growing of N-AlGaInP material, GaInAsP material, AlGaInP material and P-AlGaAs material on the surface of AlGaAs material in this order comprises:

growing GaInAsP material on N-AlGaInP material by vapor phase epitaxy growth equipment, wherein the three-family source is TMGa and TMIn, and the five-family source is PH₃、AsH₃Total H₂Flow 5 to 50L/min, growth temperature 630 to 690 ℃, chamber pressure 50 to 100mbar, V/III ratio 60 to 300, growth rate 18 to 72 nm/min.

9. The method of epitaxial growth of AlGaAs/AlGaInP hybrid material according to claim 8, wherein the growing of N-AlGaInP material, GaInAsP material, AlGaInP material, and P-AlGaAs material on the surface of AlGaAs material in this order comprises:

growing AlGaInP material on GaInAsP material by vapor phase epitaxy growth equipment, wherein three-group sources are TMGa, TMIn and TMAl, and five-group sources are PH₃The P-type dopant is DEZn, total H₂The flow rate is 5-50L/min, the growth temperature is 600-680 ℃, the pressure in the reaction chamber is 50-100 mbar, and the growth rate is 20-80 nm/min.

10. The method of epitaxial growth of AlGaAs/AlGaInP hybrid material according to claim 9, wherein the growing of N-AlGaInP material, GaInAsP material, AlGaInP material, and P-AlGaAs material on the surface of AlGaAs material in this order comprises:

growing P-AlGaAs material on AlGaInP material by vapor phase epitaxy growth equipment, wherein TMGa and TMAl are used as three-group sources, and PH is used as a five-group source₃、AsH₃The concentration is 100%, and the P-type AlGaAs dopant is DEZn or CCl₄Total H₂The flow rate is 5-50L/min, the growth temperature is 600-680 ℃, the pressure in the reaction chamber is 50-100 mbar, and the growth rate is 20-80 nm/min.

Technical Field

The invention belongs to the field of semiconductor lasers, and particularly relates to an epitaxial growth method of a mixed material.

Background

The high-power semiconductor laser has high output power and conversion efficiency, and is widely applied to the fields of pumping solid lasers, laser processing, printing, optical storage, optical communication, laser medical treatment and the like. In recent years, with the wider application of high-power semiconductor lasers, higher requirements are put on the high-power semiconductor lasers. AlGalnP/AlGaAs semiconductor laser is a new type of semiconductor photoelectronic device developed in the end of eighty years and early nineties of last century, and works in infrared band, because it has a series of advantages of small volume, light weight, high luminous efficiency, low working voltage, low energy consumption, convenient manufacture, stable and reliable work, long service life, etc., it is widely used, and the electricity puts higher and higher requirements on it.

The maximum conduction band gap difference in the AlGaInP laser material structure is only 270meV, which is 80meV smaller than that of AlGaAs material, the structure diagram of the AlGaAs/AlGaInP mixed material band is shown in FIG. 1, the material 1 is AlGaAs, and the material 2 is AlGaInP. The thermal resistance of the AlGaInP material is 2-3 times that of AlGaAs, the AlGaInP material has lower electron limiting capacity due to smaller conduction band energy gap difference, electrons overflow from an active region to a P-type limiting layer with certain probability, and poor heat dissipation is caused by larger thermal resistance, the overflow of carriers is more serious due to heat generation, so that the electrons easily overflow from the active layer to the P-type limiting layer due to heat energy under high-temperature operation, AlGaAs limitation is added to an AlGaInP outer layer, AlGaAs has good electron limiting capacity, and AlGaInP has good hole limiting capacity.

The laser manufactured by the AlGaAs/AlGaInP mixed material epitaxial wafer has the advantages of high power, good high-temperature property and the like. However, the AlGaAs/AlGaInP mixed material has the problems of island growth, high dislocation and high defect level in epitaxial growth due to the problems of different lattice constants, different thermal expansion coefficients and the like, and the photoelectric characteristics of the laser are seriously influenced.

Disclosure of Invention

Technical problem to be solved

The invention mainly aims to provide an epitaxial growth method of an AlGaAs/AlGaInP mixed material, so as to solve the problems of defects and dislocation at the interface of the mixed material.

(II) technical scheme

A method for epitaxial growth of AlGaAs/AlGaInP mixed material, comprising:

growing AlGaAs material on the surface of the substrate;

stopping growth in the process of growing the AlGaAs material on the surface of the substrate to exhaust As atoms in the reaction chamber; and

and growing the AlGaInP material on the surface of the AlGaAs material after the growth pause is finished.

In the scheme, the AlGaAs material grows on the surface of the substrate by adopting a metal organic chemical vapor deposition method.

In the scheme, the AlGaAs material is grown on the surface of the substrate by a metal organic chemical vapor deposition method, the adopted three-group source is TMGa and TMAl, the adopted five-group source is AsH3 and AsH3, and the N-type material dopant is SiH with 2 percent₄Or 200ppm of Si₂H₆The P-type AlGaAs dopant is DEZn or CCl₄The growth temperature is 650 to 730 ℃, the V/III ratio is 60 to 300, and the growth pressure is 50 to 100 mbar.

In the above scheme, the thickness of the AlGaAs material is 0.5 to 5 μm.

In the above scheme, the growth is stopped during the process of growing AlGaAs material on the surface of the substrate, and As atoms in the reaction chamber are exhausted, and the method comprises the following steps: and (3) stopping the V family source for 10-30 seconds to exhaust As atoms in the reaction chamber to realize growth pause.

In the scheme, the AlGaInP material grows on the surface of the AlGaAs material after the growth stop is finished, and the N-AlGaInP material, the GaInAsP material, the AlGaInP material and the P-AlGaAs material sequentially grow on the surface of the AlGaAs material by adopting a metal organic chemical vapor deposition method.

In the above scheme, N-AlGaInP material, GaInAsP material, AlGaInP material and P-AlGaAs material are grown on the surface of AlGaAs material in turn, including: growing N-AlGaInP material on the surface of AlGaAs material by vapor phase epitaxy growth method, wherein the three sources are TMGa, TMAl and TMIn, and the five sources are PH₃，AsH₃Using 2% SiH as N-type dopant₄Or 200ppm of Si₂H₆Total H₂The flow rate is 5 to 50L/min, the growth temperature is 630 to 720 ℃, the pressure in the reaction chamber is 50 to 100mbar, the V/III ratio is 60 to 300, and the growth rate is 18 to 72 nm/min.

In the scheme, N-AlGaInP material and GaInAsP material are sequentially grown on the surface of AlGaAs materialAlGaInP material and P-AlGaAs material, including: growing GaInAsP material on N-AlGaInP material by vapor phase epitaxy growth equipment, wherein the three-family source is TMGa and TMIn, and the five-family source is PH₃、AsH₃Total H₂Flow 5 to 50L/min, growth temperature 630 to 690 ℃, chamber pressure 50 to 100mbar, V/III ratio 60 to 300, growth rate 18 to 72 nm/min.

In the above scheme, N-AlGaInP material, GaInAsP material, AlGaInP material and P-AlGaAs material are grown on the surface of AlGaAs material in turn, including: growing AlGaInP material on GaInAsP material by vapor phase epitaxy growth equipment, wherein three-group sources are TMGa, TMIn and TMAl, and five-group sources are PH₃The P-type dopant is DEZn, the total H2 flow rate is 5-50L/min, the growth temperature is 600-680 ℃, the pressure of the reaction chamber is 50-100 mbar, and the growth rate is 20-80 nm/min.

In the above scheme, N-AlGaInP material, GaInAsP material, AlGaInP material and P-AlGaAs material are grown on the surface of AlGaAs material in turn, including: growing P-AlGaAs material on AlGaInP material by vapor phase epitaxy growth equipment, wherein TMGa and TMAl are used as three-group sources, and PH is used as a five-group source₃、AsH₃The concentration is 100%, and the P-type AlGaAs dopant is DEZn or CCl₄Total H₂The flow rate is 5-50L/min, the growth temperature is 600-680 ℃, the pressure in the reaction chamber is 50-100 mbar, and the growth rate is 20-80 nm/min.

(III) advantageous effects

The epitaxial growth method of the AlGaAs/AlGaInP mixed material provided by the invention can reduce the defects and dislocation at the interface of the mixed material by adjusting the components of each element and utilizing the characteristics of each material.

Drawings

FIG. 1 is a structural diagram of the energy band of an AlGaAs/AlGaInP hybrid material provided by an embodiment of the present invention.

FIG. 2 is a flow chart of an epitaxial growth method of AlGaAs/AlGaInP mixed material according to an embodiment of the present invention;

fig. 3 is a structure diagram of an epitaxial structure of an AlGaAs/AlGaInP hybrid material according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.

Fig. 2 is a flow chart of an epitaxial growth method of AlGaAs/AlGaInP mixed material according to an embodiment of the present invention, which includes the following steps:

step S11: growing AlGaAs material on the surface of the substrate;

step S12: stopping growth in the process of growing the AlGaAs material on the surface of the substrate to exhaust As atoms in the reaction chamber; and

step S13: and growing the AlGaInP material on the surface of the AlGaAs material after the growth pause is finished.

In step S11, growing AlGaAs material on the substrate surface specifically includes: the substrate is etched and cleaned, after which 1.2 μm of AlGaAs material is grown on the surface of the substrate.

Specifically, the substrate sheet is made ofThe crystal orientation of the N-type GaAs substrate material is less than 100 and more than 2-15 degrees, and the GaAs substrate adopts a commercial cleaning-free substrate. Growing AlGaAs material on the surface of the substrate by Metal-organic chemical Vapor Deposition (MOCVD), wherein three sources used for growing the AlGaAs material are TMGa and TMAl, and five sources are AsH₃，AsH₃The concentration was 100%. N type material dopant is 2% SiH₄Or 200ppm of Si₂H₆The P-type AlGaAs dopant is DEZn or CCl₄. The growth temperature is 650-730 ℃, the V/III ratio is 60-300, and the growth pressure is 50-100 mbar.

In step S12, the process of growing the AlGaAs material on the substrate surface is stopped to exhaust the As atoms in the reaction chamber, and the method specifically includes: the substrate growth is halted by discontinuing the supply of the group V source.

Discontinuing the group V source (100% AsH) by discontinuation₃) And (4) realizing growth pause, stopping for 10-30 s, and exhausting As atoms in the reaction chamber.

Growing the A1GaInP material on the surface of the AlGaAs material after the growth pause in step S13, including: step S31 to step S35.

In step S31, a 0.15 μm thick N-AlGaInP material is grown on the substrate.

The vapor phase epitaxy growth method uses TMGa, TMAl and TMIn as three sources and PH as five sources for growing N-AlGaInP material₃，AsH₃All at 100%, 2% SiH as an N-type dopant₄Total H₂The flow rate is 5 to 50L/min, the growth temperature is 630 ℃ to 680 ℃, the pressure in the reaction chamber is 50 to 100mbar, the V/III ratio is 60 to 300, and the growth rate is 18 to 72 nm/min.

Step S32, growing a 9nm thick GaInAsP material.

The three-family source used for growing GaInAsP material by vapor phase epitaxial growth equipment is TMGa and TMIn, and the five-family source is PH₃、AsH₃The concentration is 100%, the total H2 flow is 10-50L/min, the growth temperature is 630-680 ℃, the pressure in the reaction chamber is 50-100 mbar, the V/III ratio is 60-300, and the growth rate is 18-72 nm/min.

Step S33, growing AlGaInP material with a thickness of 0.15 μm.

The three-group source used by the vapor phase epitaxial growth equipment for growing the AlGaInP material is TMGa, TMIn and TMAl, and the five-group source is PH₃The concentrations are all 100%, and the P-type dopant is DEZn or Cp₂And Mg. Total H₂The flow rate is 5 to 50L/min, the growth temperature is 630 to 680 ℃, the pressure in the reaction chamber is 50 to 100mbar, and the growth rate is 20 to 80 nm/min.

Step S34, growing P-AlGaAs material with thickness of 1.2 μm.

The three-family source used by the vapor phase epitaxy growth equipment for growing the P-AlGaAs material is TMGa and TMAl, and the five-family source is AsH₃The concentration is 100%, and the P-type AlGaAs dopant is DEZn or CCl₄The total H2 flow rate is 5-50L/min, the growth temperature is 630-680 ℃, the pressure in the reaction chamber is 50-100 mbar, and the growth rate is 20-80 nm/min.

Step S35, growing P0.2 μm thick⁺-a GaAs material.

The three-family source for growing the GaAs material by the vapor phase epitaxial growth equipment is TMGa, five-familyThe source is AsH₃The concentration is 100 percent, and the P-type GaAs dopant is DEZn or CCl₄Total H₂The flow rate is 10-50L/min, the growth temperature is 520-650 ℃, the pressure in the reaction chamber is 50-100 mbar, and the growth rate is 20-60 nm/min.

The growth of a laser epitaxial wafer containing an AlGaAs/AlGaInP mixed material is completed through the above steps, and fig. 3 shows a structure diagram of the laser epitaxial wafer containing the AlGaAs/AlGaInP mixed material provided by the embodiment of the invention.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.