VCSEL array for 3D depth acquisition equipment and 3D depth acquisition equipment
阅读说明:本技术 一种用于3d深度获取设备的vcsel阵列及该3d深度获取设备 (VCSEL array for 3D depth acquisition equipment and 3D depth acquisition equipment ) 是由 蒋建华 于 2018-07-10 设计创作,主要内容包括:本发明公开了一种用于3D深度获取设备的VCSEL阵列,包括发光组件和半导体基底,所述发光组件分布在所述半导体基底的表面;所述发光组件包括至少两组发光单元组,其中每组所述发光单元组包括多个相互导通的发光单元,各组所述发光单元组按照各自相对应的图案相互交错地分布在所述半导体基底上,且由各组所述发光单元组对应的图案组成的所述发光组件对应的图案是不规则图案;所述3D深度获取设备上设有至少两组导线,各组所述导线分别连接并用于驱动各组所述发光单元组。本发明还公开了该VCSEL阵列的加工方法以及该3D深度获取设备。本发明能够在具体的3D应用中获取的深度精度与能耗之间取得很好的平衡。(The invention discloses a VCSEL array for a 3D depth acquisition device, which comprises light emitting components and a semiconductor substrate, wherein the light emitting components are distributed on the surface of the semiconductor substrate; the light emitting assembly comprises at least two groups of light emitting unit groups, wherein each group of light emitting unit groups comprises a plurality of light emitting units which are mutually communicated, the light emitting unit groups of each group are distributed on the semiconductor substrate in a mutually staggered mode according to respective corresponding patterns, and the patterns corresponding to the light emitting assembly consisting of the patterns corresponding to the light emitting unit groups of each group are irregular patterns; the 3D depth acquisition equipment is provided with at least two groups of wires, and each group of wires are connected with each other and used for driving each group of light emitting unit groups. The invention also discloses a processing method of the VCSEL array and the 3D depth acquisition equipment. The invention can achieve a good balance between depth accuracy and energy consumption obtained in specific 3D applications.)
1. A VCSEL array for a 3D depth acquisition device, comprising light emitting components and a semiconductor substrate, wherein the light emitting components are distributed on a surface of the semiconductor substrate; wherein:
the light emitting assembly comprises at least two groups of light emitting unit groups, wherein each group of light emitting unit groups comprises a plurality of light emitting units which are mutually communicated, the light emitting unit groups of each group are distributed on the semiconductor substrate in a mutually staggered mode according to respective corresponding patterns, and the patterns corresponding to the light emitting assembly consisting of the patterns corresponding to the light emitting unit groups of each group are irregular patterns; the 3D depth acquisition equipment is provided with at least two groups of wires, and each group of wires are connected with each other and used for driving each group of light emitting unit groups.
2. The VCSEL array of claim 1, wherein the corresponding pattern of each group of light-emitting units is a regular pattern or an irregular pattern, and wherein the corresponding pattern of at least one group of light-emitting units is an irregular pattern.
3. The VCSEL array of claim 1, wherein each of the light emitting units of each group of the light emitting unit groups are sequentially connected by plating a connecting metal, and the connecting metal corresponding to each group of the light emitting unit groups is plated with an insulating layer.
4. The VCSEL array of claim 1, wherein the surface of the semiconductor substrate is divided into at least one region, at least two groups of the light emitting units are distributed in each of the regions, the light emitting units of each group of the light emitting units are sequentially connected by a connecting metal, and the connecting metals of each group of the light emitting units in each of the regions are not staggered with respect to each other.
5. The VCSEL array of claim 4, wherein the surface of the semiconductor substrate is divided into a plurality of the regions, wherein the plurality of the regions are regularly shaped or irregularly shaped.
6. A method of processing a VCSEL array for a 3D depth acquisition device according to any of claims 1 to 3, comprising:
s1: distributing a plurality of light emitting units in each group of light emitting unit groups on the semiconductor substrate respectively;
s2: sequentially plating connecting metal between the light-emitting units in any group of the light-emitting unit groups so as to conduct the light-emitting units in the group of the light-emitting unit groups mutually;
s3: plating an insulating layer on the connection metal plated in step S2 to electrically isolate the connection metal;
s4: repeating steps S2 and S3 for each group of light-emitting units in sequence until the light-emitting units of each group of light-emitting units are turned on;
s5: and respectively connecting each group of the light-emitting unit groups with each group of the wires.
7. A method of processing a VCSEL array for a 3D depth acquisition device according to any of claims 1 to 3, comprising:
s1: distributing a plurality of light emitting units in each group of light emitting unit groups on the semiconductor substrate respectively;
s2: sequentially plating connecting metal between the light-emitting units in any group of the light-emitting unit groups so as to conduct the light-emitting units in the group of the light-emitting unit groups mutually;
s3: plating an insulating layer on the connection metal plated in step S2 to electrically isolate the connection metal;
s4: repeating steps S2 and S3 for each of the groups of light-emitting units in sequence until the light-emitting units of each of the groups of light-emitting units in all but any one of the groups are turned on;
s5: repeating step S2 for the group of light-emitting units that are not in conduction with each other;
s6: and respectively connecting each group of the light-emitting unit groups with each group of the wires.
8. A3D depth acquisition device, comprising a laser projection module, an imaging optical module and a processor, wherein the laser projection module comprises a DOE, a collimating lens and the VCSEL array of any one of claims 1 to 5, wherein the beams emitted from the VCSEL array are sequentially projected onto an object through the collimating lens and the DOE to form a predetermined pattern, the imaging optical module is used for capturing a predetermined image on the object, and the processor is connected to the imaging optical module to process the predetermined image to form 3D depth information of the object.
9. The 3D depth acquisition apparatus according to claim 8, wherein the processor is further connected to the laser projection module for controlling the groups of light emitting units respectively.
Technical Field
The invention relates to the field of 3D depth acquisition equipment, in particular to a VCSEL array for 3D depth acquisition equipment and the 3D depth acquisition equipment.
Background
3D depth technology is gradually entering the mass consumption domain, and common technologies include binocular stereo matching, ToF (time of flight), and structured light. In particular, structured light technology, which can work in weak texture areas while having high precision and reasonable energy consumption, is becoming more and more popular. The core component of structured light is a laser projection module that projects a series of patterns onto an object, while imaging optics captures the patterns projected onto the object and processes the patterns through a processor to obtain 3D depth information of the object.
Since the technology of the VCSEL (vertical cavity surface emitting laser) is more and more mature, the cost performance is close to that of the LED, and the VCSEL array is superior in accuracy, miniaturization, low power consumption and reliability, most of the existing 3D depth acquisition systems use the VCSEL array as an infrared light source. The VCSEL array is a semiconductor substrate on which a plurality of light emitting units are irregularly arranged, so that a pattern projected by the laser projection module has high irrelevance, as shown in fig. 1, the VCSEL array is provided with a plurality of light emitting units irregularly arranged (solid circles in the figure represent each light emitting unit), the depth precision of the VCSEL array cannot be adjusted, and the energy consumption is high, and the design and processing of the VCSEL array are one of the difficulties of the laser projection module.
The above background disclosure is only for the purpose of assisting understanding of the concept and technical solution of the present invention and does not necessarily belong to the prior art of the present patent application, and should not be used for evaluating the novelty and the originality of the present application in case that there is no clear evidence that the above content is disclosed at the filing date of the present patent application.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a VCSEL array for a 3D depth acquisition device and the 3D depth acquisition device, which can achieve a good balance between depth accuracy and energy consumption in a specific 3D application.
In order to achieve the above purpose, the present invention proposes the following solutions:
the invention discloses a VCSEL array for a 3D depth acquisition device, which comprises light emitting components and a semiconductor substrate, wherein the light emitting components are distributed on the surface of the semiconductor substrate; wherein:
the light emitting assembly comprises at least two groups of light emitting unit groups, wherein each group of light emitting unit groups comprises a plurality of light emitting units which are mutually communicated, the light emitting unit groups are distributed on the semiconductor substrate in a mutually staggered mode according to respective corresponding patterns, and the patterns corresponding to the light emitting assembly and formed by the patterns corresponding to the light emitting unit groups are irregular patterns; the 3D depth acquisition equipment is provided with at least two groups of wires, and each group of wires are connected with each other and used for driving each group of light emitting unit groups.
Preferably, the corresponding pattern of each group of the light emitting cell groups is a regular pattern or an irregular pattern, and wherein the corresponding pattern of at least one group of the light emitting cell groups is an irregular pattern.
Preferably, the light emitting units of each group of the light emitting unit groups are sequentially connected by plating connection metals, and the connection metals corresponding to each group of the light emitting unit groups are respectively plated with insulating layers.
Preferably, the surface of the semiconductor substrate is divided into at least one region, at least two groups of the light emitting unit groups are distributed in each region, the light emitting units of each group of the light emitting unit groups are sequentially connected by connecting metals, and the connecting metals of the light emitting unit groups in each group in each region are not staggered.
Preferably, the surface of the semiconductor substrate is divided into a plurality of the regions, wherein the plurality of the regions are regularly shaped or irregularly shaped.
The invention also discloses a processing method of the VCSEL array for the 3D depth acquisition equipment, which comprises the following steps:
s1: distributing a plurality of the light emitting cells in each group of the light emitting cell groups on the semiconductor substrate, respectively;
s2: sequentially plating connecting metal between the light-emitting units in any group of the light-emitting unit groups so as to conduct the light-emitting units in the group of the light-emitting unit groups mutually;
s3: plating an insulating layer on the connection metal plated in step S2 to electrically isolate the connection metal;
s4: repeating steps S2 and S3 for each group of light-emitting units in sequence until the light-emitting units in each group of light-emitting units are turned on;
s5: and respectively connecting each group of the light-emitting unit groups with each group of the wires.
The invention also discloses a processing method of the VCSEL array for the 3D depth acquisition equipment, which comprises the following steps:
s1: distributing a plurality of the light emitting cells in each group of the light emitting cell groups on the semiconductor substrate, respectively;
s2: sequentially plating connecting metals among the light-emitting units in any group of the light-emitting unit groups so as to conduct the light-emitting units in the group of the light-emitting unit groups mutually;
s3: plating an insulating layer on the connection metal plated in step S2 to electrically isolate the connection metal;
s4: repeating steps S2 and S3 for each of the groups of light-emitting units in sequence until the light-emitting units of each of the groups of light-emitting units in all but any one of the groups are turned on;
s5: repeating step S2 for the group of light-emitting units that are not in conduction with each other;
s6: and respectively connecting each group of the light-emitting unit groups with each group of the wires.
The invention also discloses a 3D depth acquisition device, which comprises a laser projection module, an imaging optical module and a processor, wherein the laser projection module comprises a DOE, a collimating lens and the VCSEL array, light beams emitted from the VCSEL array sequentially penetrate through the collimating lens and the DOE to be projected onto an object to form a preset pattern, the imaging optical module is used for capturing a preset image on the object, and the processor is connected with the imaging optical module to process the preset image to form 3D depth information of the object.
Preferably, the processor is further connected to the laser projection module for respectively controlling the groups of the light emitting units.
Compared with the prior art, the invention has the beneficial effects that: according to the VCSEL array for the 3D depth acquisition equipment, the light emitting components distributed on the semiconductor substrate are divided into at least two groups of light emitting unit groups, and the light emitting unit groups of each group can be driven to emit light respectively, so that different numbers of light emitting units can be used as required, and the depth precision and the energy consumption of the 3D depth acquisition equipment can be well balanced in specific 3D application; moreover, because the patterns corresponding to each group of light-emitting unit groups are distributed on the semiconductor substrate in a mutually staggered manner, the light beams emitted by the VCSEL array are projected out without overlapping and too dense, so that the matching rate of subsequent depth calculation in decoding is not reduced, and the precision is not influenced.
In some preferred embodiments, the semiconductor substrate is divided into a plurality of irregularly shaped regions, and a plurality of groups of light-emitting units are distributed in each region, wherein the connecting metals of the groups of light-emitting units in each region are not staggered with each other, so that on one hand, the purpose of ensuring the precision can be still achieved, and on the other hand, the processing process is simplified.
In other preferred embodiments, the insulating layer is plated on the connecting metal plated between the light-emitting units of each group of light-emitting unit groups, so that the light-emitting unit groups are insulated from each other, independent driving of the light-emitting unit groups is realized, the matching rate of subsequent depth calculation during decoding is further improved, and the obtained depth precision is improved.
Drawings
Fig. 1 is a schematic arrangement diagram of light emitting units of a VCSEL array in the prior art;
FIG. 2 is a schematic layout of a VCSEL array for a 3D depth acquisition device according to a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of the connection of the partial lighting units of FIG. 2;
FIG. 4 is a schematic cross-sectional view of a portion of FIG. 2;
FIG. 5 is an enlarged schematic view at A in FIG. 4;
FIG. 6 is a schematic diagram of a 3D depth acquisition device in accordance with a preferred embodiment of the present invention;
FIG. 7 is a schematic view of the laser projection module of FIG. 6;
FIG. 8 is a schematic layout diagram of a VCSEL array for a 3D depth acquisition device according to another preferred embodiment of the present invention;
fig. 9 is a schematic diagram of connection metal connections of two sets of light emitting cell groups in the region of the upper left corner in fig. 8.
Detailed Description
The invention will be further described with reference to the accompanying drawings and preferred embodiments.
As shown in fig. 2, the preferred embodiment of the present invention discloses a
The filled circles indicate the first
As shown in fig. 3, the first
s1: a plurality of first
s2: shielding the P electrodes of the second
s3: plating an
s4: exposing the P electrodes of the second
s5: the first and second groups of light
By grouping the
As shown in fig. 6, the 3D depth obtaining apparatus includes a
The
The first group of
In another preferred embodiment, the VCSEL array is divided into a plurality of regions on the surface of the semiconductor substrate, at least two groups of light-emitting units are distributed in each region, wherein the light-emitting units in each group of light-emitting units are sequentially connected by connecting metals, and the connecting metals of the groups of light-emitting units in each region are not staggered with each other, for example, as shown in fig. 8, the VCSEL array is divided into 9 regions on the surface of the semiconductor substrate, wherein the groups of light-emitting units in each region are respectively connected with different wires to be driven, and as shown in fig. 9, the groups of light-emitting units in the region at the upper left corner in fig. 8 are respectively connected with different wires to be driven, wherein the connecting metals of the two groups of light-emitting units are not staggered with each other, and the other regions can be connected in a similar manner to make the two groups of light-emitting connecting metals in each region mutually correspond to each other groups of light-emitting units No interleaving exists among the layers; but it still satisfies that the groups of light emitting units on the surface of the semiconductor substrate are distributed on the semiconductor substrate in a mutually staggered way according to the respective corresponding patterns; the plurality of regions divided on the surface of the semiconductor substrate may have a regular shape or an irregular shape. The VCSEL array of the preferred embodiment also enables a good balance between depth accuracy and power consumption of the 3D depth acquisition device for a specific 3D application.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several equivalent substitutions or obvious modifications can be made without departing from the spirit of the invention, and all the properties or uses are considered to be within the scope of the invention.
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