阅读说明：本技术 半导体模块、显示装置及半导体模块的制造方法 (Semiconductor module, display device, and method for manufacturing semiconductor module ) 是由 东坂浩由 于 2018-03-08 设计创作，主要内容包括：树脂(16)覆盖蓝色LED(15)的侧面及背面,且将蓝色LED(15)保持为水平。电极(14)设于配线基板(11)的表面与蓝色LED(15)的背面之间,贯穿树脂(16),且将配线基板(11)与蓝色LED(15)电连接。蓝色LED(15)的光出射面(表面)(151)自树脂(16)露出,将光出射面(表面)(151)与树脂(16)的表面(161)配置于同一平面。(The resin (16) covers the side surfaces and the back surface of the blue LED (15) and holds the blue LED (15) horizontal, the electrode (14) is provided between the surface of the wiring board (11) and the back surface of the blue LED (15), penetrates the resin (16), and electrically connects the wiring board (11) and the blue LED (15), the light emitting surface (surface) (151) of the blue LED (15) is exposed from the resin (16), and the light emitting surface (surface) (151) and the surface (161) of the resin (16) are arranged on the same plane.)

The semiconductor module of types 1 and , characterized by comprising:

a substrate;

a light emitting chip mounted on the substrate;

a resin covering the side and back surfaces of the light emitting chip and holding the light emitting chip horizontal;

an electrode material provided between the surface of the substrate and the back surface of the light-emitting chip, penetrating through the resin, and electrically connecting the substrate and the light-emitting chip;

the light emitting surface (surface) of the light emitting chip is exposed from the resin,

the light emitting surface (surface) and the surface of the resin are disposed on the same plane.

A semiconductor module of kinds, comprising:

a substrate;

a plurality of light emitting chips arranged side by side and mounted on the substrate;

a resin covering side surfaces and back surfaces of the plurality of light emitting chips and holding the plurality of light emitting chips horizontally;

an electrode material provided between the front surface of the substrate and the back surfaces of the plurality of light-emitting chips, penetrating the resin, and electrically connecting the substrate and the plurality of light-emitting chips;

light emitting surfaces (surfaces) of the plurality of light emitting chips are exposed from the resin,

the light emitting surface (surface) and the surface of the resin are disposed on the same plane.

3. The semiconductor module according to claim 1 or 2,

the light-emitting chip has a vertical width and a lateral width of 20 [ mu ] m or less in a plan view.

4. The semiconductor module according to claim 1 or 2,

the substrate is provided with a metal wiring line,

the electrode material is composed of

th part connected to the metal wiring, and

a second portion connected to the light emitting chip,

a -th area of a cross section parallel to a light exit direction in the -th section is different from a second area of a cross section parallel to the light exit direction in the second section.

5. The semiconductor module of claim 4,

the th area is larger than the second area.

6. The semiconductor module according to claim 1 or 2,

the resin is composed of at least two layers including an th layer and a second layer,

the th layer is a th resin disposed on the substrate side, and the second layer is a second resin disposed on the th resin and having a lower light reflectance than the th resin.

A display device , which comprises the semiconductor module according to which is one of claims 1 to 6.

A manufacturing method of which is a manufacturing method of manufacturing the semiconductor module according to any of of claims 1 to 6,

the method comprises a step of filling a liquid resin between the substrates at a temperature within a temperature range of 50-200 ℃ before curing.

9. The manufacturing method according to claim 8,

the temperature range is 80-170 ℃.

10. The manufacturing method according to claim 8,

the temperature range is 100-150 ℃.

11. The manufacturing method according to of any one of claims 8 to 10,

the semiconductor module includes:

a substrate having a metal wiring;

an electrode disposed on the substrate and connected to the metal wiring;

a light emitting element disposed on the electrode and having a light emitting surface on the opposite side to the substrate side;

a resin that covers at least portions of the side surfaces of the light-emitting element and the step portions of the electrodes on the substrate;

at least portions of the adjacent light emitting elements are connected to each other on the light exit surface side of the light emitting elements.

Technical Field

The invention relates to semiconductor modules, display devices, and methods for manufacturing semiconductor modules.

Background

Patent documents 1 to 3 disclose examples of conventional light emitting devices.

Disclosure of Invention

Technical problem to be solved by the invention

The above-described conventional light emitting devices have a problem that the light emitting segments cannot be made high-resolution.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a light emitting segment with high resolution.

Means for solving the problems

The semiconductor module of the mode is characterized by comprising a substrate, a light emitting chip mounted on the substrate, a resin covering the side surface and the back surface of the light emitting chip and keeping the light emitting chip horizontal, an electrode material provided between the surface of the substrate and the back surface of the light emitting chip, penetrating the resin and electrically connecting the substrate and the light emitting chip, wherein the light emitting surface (front surface) of the light emitting chip is exposed from the resin, and the light emitting surface (front surface) and the surface of the resin are arranged on the same plane .

Another semiconductor module according to the mode of the invention is characterized by including a substrate, a plurality of light emitting chips arranged side by side on the substrate, a resin covering side surfaces and rear surfaces of the plurality of light emitting chips and holding the plurality of light emitting chips horizontally, an electrode material provided between a surface of the substrate and the rear surfaces of the plurality of light emitting chips, penetrating the resin and electrically connecting the substrate and the plurality of light emitting chips, and light emitting surfaces (surfaces) of the plurality of light emitting chips exposed from the resin, and the light emitting surfaces (surfaces) and the surface of the resin being arranged on the same plane .

Effects of the invention

According to the form of the present invention, the effect of making the light-emitting segment high-resolution is achieved.

Drawings

Fig. 1 is a sectional view showing a sectional structure of a semiconductor module according to embodiment of the present invention.

Fig. 2 is a diagram illustrating a method of manufacturing a semiconductor module according to embodiment of the present invention.

Fig. 3 is a sectional view showing a sectional structure of a semiconductor module according to a second embodiment of the present invention.

Fig. 4 is a sectional view showing a sectional structure of a semiconductor module according to a third embodiment of the present invention.

Fig. 5 is a sectional view showing a sectional structure of a semiconductor module according to a fourth embodiment of the present invention.

Fig. 6 is a diagram illustrating an effect of the semiconductor module according to the fourth embodiment of the present invention.

Fig. 7 is a sectional view showing a sectional structure of a semiconductor module according to a fifth embodiment of the present invention.

Detailed Description

[ th embodiment ]

An th embodiment of the present invention will be described below with reference to fig. 1 and 2.

(constitution of semiconductor Module 1)

Fig. 1 is a cross-sectional view showing a cross-sectional structure of a semiconductor module 1 according to embodiment of the present invention, and as shown in the drawing, the semiconductor module 1 includes a wiring board 11, a metal wiring 12, an insulating layer 13, an electrode 14, a blue LED15, and a resin 16.

The semiconductor module 1 is a light-emitting device incorporated in a small display device such as a head-mounted display, for example. In the semiconductor module 1, a single blue LED15 is disposed at a position corresponding to each pixel of a conventional normal display device. The semiconductor module 1 controls the on and off of each of the blue LEDs 15, thereby participating in the display of information on the display device.

In the semiconductor module 1, it is preferable to have a layout in which the blue LEDs 15 are arranged densely. This can improve the high resolution of the display screen. This technique is applicable to a product in which the size of each blue LED15 is 20 μm or less in vertical and lateral widths, and more preferably several μm to 10 μm in plan view.

(Wiring board 11)

The wiring board 11 may be a wiring board having a wiring formed on at least a surface thereof so as to be connectable to the blue LED 15. As a material of the wiring board 11, a crystalline substrate of aluminum nitride such as single crystal or polycrystal, in which the entire substrate is made of aluminum nitride, may be used, a sintered substrate may be used, and as another material, a laminate or a composite body such as ceramics such as alumina, glass, a semiconductor or metal substrate such as Si, or a substrate having an aluminum nitride thin film layer formed on the surface thereof may be used. A metallic substrate or a ceramic substrate is preferable because of high heat dissipation.

For example, by using a substrate in which a circuit for controlling light emission of LEDs is formed over Si by an integrated circuit formation technique, a high-resolution display device in which fine LEDs are densely arranged can be manufactured.

(Metal wiring 12)

The metal wiring 12 is a wiring including at least a control circuit for supplying a control voltage to the blue LED15, the metal wiring 12 is formed by patterning a metal layer by etching or the like, for example, the metal wiring 12 made of Al, Cu or the like is formed on the surface of an Si substrate, and the metal wiring 12 may be formed on the substrate on the side where the metal wiring 12 is formed for protecting the metal wiring 12Surface of formed of SiO₂And the like.

(insulating layer 13)

The insulating layer 13 is an insulating layer formed of an oxide film layer and/or a resin layer. The insulating layer 13 prevents the wiring board 11 from directly contacting the electrode 14.

(electrode 14)

The electrode 14 functions as a bump, and is also referred to as a bump, electrically connecting the metal wiring 12 to a metal terminal (not shown) provided on the surface of the blue LED15, the -th part of the electrode 14 connected to the metal wiring 12 is a substrate-side electrode 141, and the second part of the electrode 14 connected to a metal terminal (not shown) provided on the surface of the blue LED15 is an LED-side electrode 142, the substrate-side electrode 141 and the LED-side electrode 142 are formed of any metals such as Au, Pt, Pd, Rh, Ni, W, Mo, Cr, and Ti, or an alloy thereof, or a combination thereof.

The electrode 14 has a stepped portion in the light emission direction, and the area of the cross section parallel to the light emission direction ( th area, cross-sectional area) of the substrate-side electrode 141 is different from the area of the cross section parallel to the light emission direction (second area, cross-sectional area) of the LED-side electrode 142, and in fig. 1, the cross-sectional area of the substrate-side electrode 141 is larger than the cross-sectional area of the LED-side electrode 142.

(blue LED15)

As the blue LED15, a known one, specifically, a semiconductor light emitting element can be used. Among these, the GaN-based semiconductor is preferable as the blue LED15 because it can emit light having a short wavelength that can efficiently excite a fluorescent substance.

The semiconductor layer of the blue LED15 is a nitride semiconductor applied to the semiconductor module 1 in which points and a wavelength conversion member (phosphor) are combined, in view of points that the nitride semiconductor emits a short wavelength region in the visible light region, a near ultraviolet region, or a wavelength region shorter than this, and a semiconductor such as a ZnSe-based, InGaAs-based, AlInGaP-based, or the like may be used.

The light emitting element structure of the semiconductor layer is preferably a structure having an active layer between an th conductive type (n-type) layer and a second conductive type (p-type) layer in terms of output and efficiency, but is not limited thereto, and a partial insulation, semi-insulation, reverse conductive type structure may be provided in each conductive type layer, and these structures may be provided in addition to the th and second conductive type layers.

As the structure of the blue LED15 and its semiconductor layer, a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a PN junction can be cited. Further, each layer may have a superlattice structure, or a light-emitting layer serving as an active layer may have a single quantum well structure or a multiple quantum well structure formed in a thin film that generates a quantum effect.

A metal terminal to which power can be supplied from the outside is provided on the surface of the blue LED 15.

The size of each blue LED15 is not particularly limited, but when high resolution is required as a display screen, the LED15 needs to be miniaturized, and for example, the vertical width and the horizontal width need to be 20 μm or less, more preferably 10 μm or less. By using this technique, even when the blue LED15 is so small, the adhesion of the resin 16 is sufficiently high, and therefore the blue LED15 can be stably fixed to the wiring board 11.

(resin 16)

The resin 16 fixes the blue LED15 and the electrode 14 to the wiring board 11, and prevents light leakage from the side surface of the blue LED15, the resin 16 is also referred to as an underfill, and is formed by curing a liquid resin , for example, and the resin 16 is embedded in a region including at least the upper portion of the wiring board 11, the portion of the side surface of the blue LED15, and the side surface of the electrode 14 in the semiconductor module 1.

First, light having a color difference of a level that cannot be ignored compared to light emitted from the light emitting surface 151 is prevented from being emitted from the side surface to the outside, and thus color unevenness occurring in the entire light emission color can be reduced, second, light traveling in the side direction is reflected toward the light extraction direction side of the semiconductor module 1, and the light emitting region to the outside is restricted by steps, thereby improving the directivity of the emitted light, and improving the heat radiation luminance 387 of the light emitting surface 151, fourth, heat generated from the blue LED 2 is conducted to the resin 16, thereby improving the moisture resistance of the light emitting layer of the blue LED15, and fifth, the light emitting layer of the blue LED15 can be improved.

The shape of the side surface of the blue LED15 continuous from the light emission surface 151, that is, the side surface side of the blue LED15 parallel to the thickness direction is covered with the resin 16, and the light emission surface 151 is exposed from the resin 16, is not particularly limited. For example, the resin 16 may be a structure protruding beyond the light emitting surface 151 or a structure recessed without reaching the light emitting surface 151.

In embodiment , as shown in fig. 1, the surface 161 of the resin 16 is formed in a planar shape along the light emitting surface 151, that is, the exposed surface of the covering region of the resin 16 is formed to be substantially the same as the surface plane, thereby suppressing variations in light emission characteristics in the semiconductor module 1 and improving the yield, and further, by covering substantially the entire surface of the side surface, the heat dissipation property of the blue LED15 can be improved.

In the present embodiment, the resin 16 is made of a white resin or a black resin. Therefore, the color of the resin 16 is preferably a colored color, and particularly preferably a white color or a black color.

(fixation and reinforcement of electrode 14)

In fig. 1, since the cross-sectional area of the substrate-side electrode 141 and the cross-sectional area of the LED-side electrode 142 are different, the resin 16 is in close contact with the exposed region (step surface) of the surface of any of the electrodes, in addition to the side surface of the substrate-side electrode 141 and the side surface of the LED-side electrode 142. Since the adsorption action of the resin 16 acts on the step surface, the substrate-side electrode 141 and the LED-side electrode 142 are more strongly fixed to the wiring substrate 11.

As shown in fig. 1, when the cross-sectional area of the substrate-side electrode 141 is larger than the cross-sectional area of the LED-side electrode 142, a fixing force 17 that presses the substrate-side electrode 141 against the wiring board 11 from above the stepped surface of the substrate-side electrode 141 acts on the substrate-side electrode 141, and thus the electrode 14 and the blue LED15 disposed thereon can be more stably fixed to the wiring board 11, and therefore, it is more preferable that the light emitting surface 151 of the blue LED15 and the surface 161 of the resin 16 are substantially the same as each other as , and thus emission of the blue LED15 from the side surface of the blue LED15 can be suppressed, and the light emission efficiency of the blue LED15 can be improved.

(method of manufacturing semiconductor Module 1)

Fig. 2 is a diagram illustrating a method of manufacturing the semiconductor module 1 according to embodiment of the present invention.

(Process for Forming blue LED15)

First, as shown in fig. 2 (a), the blue LED15 is provided on the growth substrate 18, the growth substrate 18 is a substrate for epitaxially growing the semiconductor layer of the blue LED15, and as a substrate in a nitride semiconductor, sapphire or spinel (MgAl) having any plane of the C plane, the R plane, and the a plane as a main surface is available₂O₄) Such an insulating substrate, an oxide substrate of lithium niobate, neodymium gallate or the like lattice-bonded to silicon carbide (6H, 4H, 3C), Si, ZnS, ZnO, GaAs, diamond, and a nitride semiconductor substrate of GaN, AlN or the like.

As the nitride semiconductor, In_xAl_yGa_1-x-yN (0 ≦ x, 0 ≦ y, x + y ≦ 1), and optionally, mixed crystal B or P, As. The n-type semiconductor layer and the p-type semiconductor layer of the blue LED15 are not particularly limited to a single layer or a plurality of layers. The nitride semiconductor layer has a light-emitting layer as an active layer, which is a single quantum well Structure (SQW) or a multiple quantum well structure (MQW).

The light emitting layer (active layer) of the nitride semiconductor has a structure in which an n-type contact layer of, for example, Si-doped GaN and an n-type multilayer film layer of GaN/InGaN are stacked as an n-type nitride semiconductor layer, an MQW active layer of InGaN/GaN is stacked next, and further, a p-type multilayer film layer of, for example, Mg-doped InGaN/Al GaN and a p-type contact layer of Mg-doped GaN are stacked as a p-type nitride semiconductor layer, using a base layer of a nitride semiconductor such as a buffer layer, for example, a low-temperature growth thin film GaN and a GaN layer on the growth substrate 18, and the light emitting layer (active layer) of the nitride semiconductor has a quantum well structure including, for example, a well layer, a barrier layer, and a well layer.

The wavelength of light emitted from the active layer can be set to a wavelength in the vicinity of 360nm to 650nm, preferably 380nm to 560nm, depending on the purpose and use of the light-emitting element, and the like, and the composition of the well layer is preferably GaN or InGaN, and the composition of the barrier layer in this case is preferably GaN or InGaN as specific examples of the film thicknesses of the barrier layer and the well layer, and the film thicknesses are 1nm to 30nm and 1nm to 20nm, respectively, and a single quantum well of well layers or a multiple quantum well structure of a plurality of well layers with barrier layers and the like interposed therebetween can be obtained.

(Process for Forming LED side electrode 142)

After the formation of the blue LED15, as shown in fig. 2 (b), a plurality of LED side electrodes 142 are formed on the blue LED 15. In this formation, a well-known general electrode formation technique is used. A representative material of the LED side electrode 142 is, for example, Au.

(Process for Forming separation tank 19)

After the formation of the LED side electrodes 142, as shown in fig. 2 (c), a plurality of separation grooves 19 are formed on the blue LED15, in which formation a standard semiconductor selective etching process is used, in fig. 2, the separation grooves 19 are formed between the adjacent LED side electrodes 142, the formed separation grooves 19 reach the surface of the growth substrate 18, blue LEDs 15 are divided into a plurality of individual blue LEDs 15 (light emitting chips) on the surface of the growth substrate 18 by forming the separation grooves 19.

(alignment Process for two substrates)

After the formation of the separation grooves 19, as shown in fig. 2 (d), the wiring board 11 on which the metal wiring 12, the insulating layer 13, and the substrate-side electrode 141 are formed in advance is prepared. A well-known general electrode forming technique is used for forming the substrate-side electrode 141 on the wiring substrate 11. A representative material of the substrate-side electrode 141 is Au, for example. The operation of inverting the growth substrate 18 as shown in fig. 2 (d) is performed simultaneously with the preparation of the wiring substrate 11. After the inversion, the wiring substrate 11 and the growth substrate 18 are aligned so that the substrate-side electrodes 141 and the LED-side electrodes 142 face each other.

(step of bonding substrates)

After the alignment is completed, the wiring board 11 and the growth board 18 are bonded as shown in fig. 2 (e), and at this time, the wiring board 11 and the growth board 18 are pressed from above and below by pressure using a conventional bonding technique to bond the corresponding board-side electrode 141 and the LED-side electrode 142, whereby the corresponding board-side electrode 141 and the LED-side electrode 142 are integrated into an electrode 14.

(Process for Forming resin 16)

After the bonding step is completed, the liquid resin 16a is filled in the gap formed between the wiring substrate 11 and the growth substrate 18. Fig. 2 (f) shows the filled state. In this case, for example, the bonded state may be immersed in a container filled with the liquid resin 16 a. The main material of the liquid resin 16a is not particularly limited, and for example, an epoxy resin is preferable. In addition to the above, the method of injecting the liquid resin 16a may be a method of injecting the liquid resin 16a with an injection needle, particularly a microneedle that is matched in size to the gap formed between the wiring board 11 and the blue LED 15. In this case, a material of the injection needle may be made of metal, plastic, or the like.

In the filling step, the liquid resin 16a is preferably filled at a temperature in the range of 50 to 200 ℃ to facilitate normal filling of the liquid resin 16a into the voids, and the temperature range is more preferably 80 to 170 ℃ to reduce the possibility of impairing the characteristics (adhesiveness, heat dissipation, etc. after the curing process described later) of the resin 16, and the temperature range is further preferably to 150 ℃ to reduce the generation of bubbles and the like in the voids, so that substantially complete filling can be achieved without generation of convection and the like, and the semiconductor module 1 can be easily manufactured.

In particular, when the size of each blue LED15 is set to a very small size such as 20 μm or less in the vertical and horizontal widths, more preferably several μm to 10 μm, and the thickness of the blue LED15 is set to several μm (2 μm to 10 μm), the liquid resin 16a more effectively functions as a reinforcing member for improving the fastening force in the step after the substrate is peeled off and the step after the peeling off, and thus the variation in the characteristics among the products of the resin 16 can be further reduced by , and the semiconductor module 1 can be easily manufactured.

The liquid resin 16a filled in the void is completely embedded in the void as shown in fig. 2 (f). Thereby, the liquid resin 16a is embedded on the side surface of the blue LED15, the side surface and the stepped surface of the electrode 14, and the upper portion of the wiring board 11. After filling of the liquid resin 16a is completed, the liquid resin 16a is cured. The method of curing the liquid resin 16a is not particularly limited, and the liquid resin 16a may be cured by heating the liquid resin 16a or by irradiating the liquid resin 16a with ultraviolet light, for example.

(step of peeling growth substrate 18)

After the filling step is completed, the growth substrate 18 is peeled off as shown in fig. 2 (g). in this step, an existing peeling technique is used, and in example, as an existing peeling method, a peeling technique using laser irradiation is used, and in the case where a nitride semiconductor crystal is grown as a light emitting element layer using a transparent substrate such as sapphire as a growth substrate of an LED, damage to the interface between the growth substrate and the crystal growth layer can be reduced by irradiating laser light from the transparent substrate side under conditions.

Since the resin 16 fixes the electrode 14 and the blue LED15 in close contact with the wiring board 11, the blue LED15 and the electrode 14 are prevented from being peeled off by when the growth substrate 18 is peeled off, and the light emitting surface 151 of the blue LED15 and the surface 161 of the resin 16 are exposed after the growth substrate 18 is peeled off, whereby the semiconductor module 1 is completed.

The above-described manufacturing method is merely examples of the method for manufacturing the semiconductor module 1, and the respective steps described herein are for the purpose of facilitating the manufacturing of the semiconductor module 1, and the steps constituting the manufacturing method of the semiconductor module 1 are not limited to these.

The relationship between the respective members provided in the semiconductor module 1 of the present embodiment can be expressed as follows, the resin 16 covers the side surface and the back surface of the blue LED15, and holds the blue LED15 horizontally, the electrode 14 is an electrode material that is provided between the surface of the wiring board 11 and the back surface of the blue LED15, penetrates the resin 16, and electrically connects the wiring board 11 and the blue LED15, the light emission surface (front surface) 151 of the blue LED15 is exposed from the resin 16, and the light emission surface (front surface) 151 and the front surface 161 of the resin 16 are disposed on the same plane .

The effects of the semiconductor module 1 of the present embodiment can also be expressed as follows. The blue LED15 may be maintained in a horizontal state by the electrode 14 and the resin 16. In addition, the size of the proximate light emitting segments can be reduced to the size of the blue LED15 itself, thus enabling high resolution of the light emitting segments. The optical axis of the semiconductor module 1 can also be stabilized. The blue LED15 (phosphor) can also be easily formed.

The relationship among the respective members provided in the semiconductor module 1 of the present embodiment can be expressed as follows, the plurality of blue LEDs 15 are mounted side by side on the wiring board 11, the resin 16 covers the side surfaces and the back surface of the plurality of blue LEDs 15, and the plurality of blue LEDs 15 are kept horizontal, the electrode 14 is an electrode material which is provided between the surface of the wiring board 11 and the back surface of the plurality of blue LEDs 15, penetrates the resin 16, and electrically connects the wiring board 11 and the plurality of blue LEDs 15, the light emitting surfaces (surfaces) 151 of the plurality of light emitting chips are exposed from the resin 16, and the light emitting surfaces (surfaces) 151 and the surface 161 of the resin 16 are arranged on the same plane.

The semiconductor module 1 of the present embodiment can also exhibit the following effects in that the entire plurality of blue LEDs 15 can be kept in a horizontal state by the electrodes 14 and the resin 16, whereby discomfort of the segments due to inclination of the blue LEDs 15 can be prevented, in addition, the size of the plurality of segments of the semiconductor module 1 can be reduced to the size of the plurality of blue LEDs 15 themselves, so that the plurality of segments can be made high in resolution, the optical axis of the semiconductor module 1 can also be stabilized, the plurality of blue LEDs 15 (phosphors) can also be easily formed, deviation of the optical axes of the plurality of segments can also be prevented, or flickering of light emitted by the semiconductor module 1 can be prevented.

[ second embodiment ]

In the present embodiment, members common to the th embodiment are denoted by the same reference numerals , and detailed description thereof will not be repeated unless otherwise particularly required.

As shown in this figure, the semiconductor module 1 of the present embodiment includes an electrode 14a instead of the electrode 14 of the semiconductor module 1 of the th embodiment, the -th part of the electrode 14a connected to the metal wiring 12 is a substrate-side electrode 141a, the second part of the electrode 14a connected to a metal terminal (not shown) provided on the surface of the blue LED15 is an LED-side electrode 142a, the substrate-side electrode 141a and the LED-side electrode 142a have substantially the same size and have a hemispherical shape, and a narrowed portion is formed in the portion on the side surface of the electrode 14a, and the narrowed portion constitutes a step surface.

When the wiring board 11 and the growth board 18 are bonded, it is conceivable that the wiring board 11 and the growth board 18 are pressed from above and below by applying pressure so that the corresponding substrate-side electrode 141a and the LED-side electrode 142a are bonded, in this case, if the corresponding substrate-side electrode 141a and the LED-side electrode 142a are integrated into the electrode 14a, the electrode 14a has the shape shown in fig. 3.

When the corresponding substrate-side electrode 141a is joined to the LED-side electrode 142a, the resin 16 enters the narrowed portion of the portion located on the side surface of the electrode 14a, whereby the fixing strength between the substrate-side electrode 141a and the LED-side electrode 142a can be improved.

In short, the shapes of the substrate-side electrode 141a and the LED-side electrode 142a are not limited to a hemispherical shape, but the shapes of the substrate-side electrode 141a and the LED-side electrode 142a may be a shape in which a narrowed portion is formed at a portion on the side surface of the electrode 14 a.

[ third embodiment ]

In the present embodiment, members common to the th to second embodiments are denoted by the same reference numerals , and detailed description thereof will not be repeated unless otherwise particularly required.

Fig. 4 is a cross-sectional view showing a cross-sectional structure of a semiconductor module 1 according to a third embodiment of the present invention, and as shown in this figure, the semiconductor module 1 according to the present embodiment includes a red phosphor 31, a green phosphor 32, and a translucent resin 33 in addition to all the constituent elements of the semiconductor module 1 according to .

The resin 16 is embedded in the upper portion of the wiring board 11, the side surface of the blue LED15, and the periphery of the electrode 14, hereinafter, the three blue LEDs 15 shown in fig. 4 are referred to as , second, and third blue LEDs 15 in order from the left side in the drawing, the red phosphor 31 is disposed on the surface (light emitting surface 151) of the th blue LED15, the green phosphor 32 is disposed on the surface (light emitting surface 151) of the second blue LED15 disposed next to the th blue LED15, the light transmitting resin 33 is disposed on the surface (light emitting surface 151) of the third blue LED15 disposed next to the second blue LED15, and the above-described various phosphors are formed by, for example, photolithography, screen printing, or the like in such a manner as to cover at least the light emitting surface 151 of the LED 15.

The red phosphor 31 converts the wavelength of light emitted from the blue LED15 disposed directly below the red phosphor, and emits red light. The green phosphor 32 converts the wavelength of light emitted from the blue LED15 disposed directly below the phosphor, and emits green light. The light-transmitting resin 33 passes through the blue LED15 directly below the resin without converting the wavelength of the light emitted from the LED. Thus, the semiconductor module 1 of the present embodiment can emit light of three primary colors, red light, green light, and blue light. In addition, the display device incorporating the semiconductor module 1 of the present embodiment can perform color display by controlling the light emission of each LED.

The red phosphor 31 and the green phosphor 32 are specifically composed of: a glass plate; a light conversion member provided thereon; or a phosphor crystal of the light conversion member or a single crystal, a polycrystalline, an amorphous, a ceramic body having the phase; or a mixture of a sintered body, an aggregate, and a porous material of a light-transmitting member added as appropriate, with a light-transmitting member such as a resin mixed or impregnated with the phosphor crystal particles; or a light-transmitting member containing phosphor particles, for example, a molded body of a light-transmitting resin. In addition, from the viewpoint of heat resistance, the light-transmitting member is preferably made of an inorganic material, not an organic material such as a resin. Specifically, it is preferably made of a translucent inorganic material containing a phosphor, and in particular, it is molded by using a sintered body of a phosphor and an inorganic material (binder), or a sintered body or a single crystal made of a phosphor, thereby improving reliability. In the case of using a YAG phosphor, alumina (Al) is preferably used in addition to a single crystal or a high-purity sintered body of YAG from the viewpoint of reliability₂O₃) A sintered body of YAG/alumina as a binder material (binder). The shapes of the red phosphor 31 and the green phosphor 32 are not particularly limited, and the red phosphor 31 and the green phosphor 32 are formed in a plate shape in the second embodiment. By forming the plate-like shape, the coupling efficiency with the emission surface of the blue LED15 configured in a planar shape can be improved, and alignment can be easily performed so as to be substantially parallel to the main surfaces of the red phosphor 31 and the green phosphor 32. Further, by making the thicknesses of the red phosphor 31 and the green phosphor 32 substantially constant, the presence of the deflection of the wavelength conversion member configured can be suppressed, and as a result, the amount of wavelength conversion of the light passing therethrough can be made substantially uniform, the ratio of color mixture can be stabilized, and color unevenness at the portion of the light emitting surface 15a can be suppressed.

The wavelength at which white light emission can be performed in appropriate combination with the blue LED15Typical phosphors used in the conversion member include a YAG phosphor and a LAG (lutetium aluminum garnet) phosphor activated with cerium. Particularly, in the case of use for a long period of time with high luminance, (Re) is preferable_1-xSm_x)₃(Al_1-yGa_y)₅O₁₂Ce (0 ≦ x < 1, 0 ≦ Y ≦ 1, Re being at least elements selected from the group consisting of Y, Gd, La, Lu) and the like, and further, a material comprising at least one element selected from the group consisting of YAG, LAG, BAM Mn, (Zn, Cd) Zn Cu, CCA, SCA, SCESN, SESN, CESN, CASBN and CaAlSiN can be used₃At least kinds of phosphors in the group consisting of Eu.

In the semiconductor module 1 of the present embodiment, since at least the light emitting surface 151 is planarized, the adhesion of the red phosphor 31, the green phosphor 32, and the translucent resin 33 to the light emitting surface 151 of the blue LED15 can be improved, and the uniformity of the film thickness can be achieved, so that the optical characteristics can be improved, and if the surface 161 of the resin 16 is formed in a planar shape along the light emitting surface 151, that is, if the exposed surface of the covered region of the resin 16 is formed to be substantially the same as the surface of the light emitting surface 151, the surface is in a nearly flat state.

[ fourth embodiment ]

In the present embodiment, members common to at least any of the th to third embodiments are denoted by the same reference numerals , and detailed description thereof will not be repeated unless otherwise specified.

Fig. 5 is a cross-sectional view showing a cross-sectional structure of a semiconductor module 1 according to a fourth embodiment of the present invention, and as shown in the drawing, the constituent elements of the semiconductor module 1 according to the present embodiment are the same as those of the semiconductor module 1 according to the th embodiment, but the configuration of the resin 16 is different in the present embodiment, specifically, the resin 16 is composed of at least two layers including a th layer and a second layer, and in the example of fig. 5, the th layer is a white-based resin 162( th resin), the second layer is a black-based resin 163 (second resin) having a lower light reflectance than the white-based resin 162, the white-based resin 162 is disposed on the wiring board 11 side, and the black-based resin 163 is disposed on the white-based resin 162.

According to the configuration of fig. 5, the light reflectance of the resin 16 can be controlled to 50% or more on the wiring board 11 side. In addition, the light transmittance of the resin 16 can be controlled to 50% or less on the blue LED15 side. The light transmittance and the light reflectance of the semiconductor module 1 will be described in detail later.

Fig. 6 is a diagram illustrating an effect of the semiconductor module 1 according to the fourth embodiment of the present invention.

Fig. 6 (a) shows a plurality of partial regions 41 constituting the front surface (front surface) of the semiconductor module 1, and in this figure, 3 × 3 — 9 partial regions 41 are shown, and partial regions 41 correspond to, for example, pixels in a display device in which the semiconductor module 1 is assembled, and in fig. 6 (a), partial regions 41 are constituted by three dots, and each dot is, for example, a portion emitting light of any colors of the three primary colors.

In fig. 6 (a), when only the center point 42 arranged at the center of the area among the three points included in the central partial area 41 emits light, only the central partial area 41 emits light. The light emission luminance in this case is set to 100. Fig. 6 (b) shows how light leakage occurs in the semiconductor module 1. In fig. 6 (b), when only the center point 42 emits light, the light emission range 43 is expanded from the central partial region 41 to the peripheral partial region 41. When the light emission luminance of the central partial region 41 is set to 100, the light emission luminance leaked in the peripheral partial region 41 is 20. The light leakage rate at this time was defined as 20%. The light leakage rate can also be said to be a contrast ratio when the surface of the semiconductor module 1 emits light.

Fig. 6 (c) is a graph showing the relationship between the light leakage rate in the in-plane direction of the semiconductor module 1 and the light transmittance or light reflectance of the resin 16. The vertical axis of the graph represents the light leakage rate, and the horizontal axis represents the light transmittance or light reflectance.

As shown by a curve 51, the higher the light transmittance of the resin 16, the higher the light leakage rate of the semiconductor module 1, and , the higher the light reflectance of the resin 16, the lower the light leakage rate of the semiconductor module 1, as shown by a curve 52, the light leakage rate is 20% or less in the case where the light transmittance is 50% or less, and the light leakage rate is also 20% or less in the case where the light reflectance is 50% or more.

In the semiconductor module 1, the light transmittance of the resin 16 is preferably 50% or less. This can reduce the light leakage rate to 20% or less, and thus can improve the display quality of the display device in which the semiconductor module 1 is assembled. In the semiconductor module 1, the light reflectance of the resin 16 is preferably 50% or more. This can reduce the light leakage rate to 20% or less, and thus can improve the display quality of the display device in which the semiconductor module 1 is assembled.

[ fifth embodiment ]

In the present embodiment, members common to at least any of the th to third embodiments are denoted by reference numerals, and detailed description thereof will not be repeated unless otherwise particularly required.

Fig. 7 is a cross-sectional view showing a cross-sectional structure of a semiconductor module 1 according to a fifth embodiment of the present invention, and as shown in the drawing, constituent elements of the semiconductor module 1 according to the present embodiment are the same as those of the semiconductor module 1 according to , however, in the present embodiment, the shape of the blue LED15 is different, specifically, at least portions of a plurality of adjacent blue LEDs 15 are connected to each other in the light emitting surface 151 of the blue LED15, and in the example of fig. 7, a plurality of blue LEDs 15 share light emitting surfaces 151, whereby the surface of the semiconductor module 1 can be made smoother.

The semiconductor module 1 of the present embodiment is manufactured, for example, as follows, in the step of manufacturing the separation grooves 19, the separation grooves 19 are manufactured so that the separation grooves 19 do not reach the growth substrate 18 and a slight (for example, 1 μm) epitaxial layer remains on the surface of the growth substrate 18, and therefore, in the step of peeling the growth substrate 18, for example, when the growth substrate 18 is peeled by laser irradiation, the GaN layer that is not an interface may be left as a thin layer on the semiconductor module 1 as shown in fig. 7 without being decomposed, and as a result, the surface smoothing at the time of manufacturing the semiconductor module 1 may be improved by steps.

[ nodules ]

A semiconductor module (1) according to embodiment 1 of the present invention is characterized by comprising a substrate (wiring board 11), a light-emitting chip (blue LED15) mounted on the substrate, a resin (16) that covers the side surface and the back surface of the light-emitting chip and holds the light-emitting chip horizontally, an electrode material (electrode 14) that is provided between the front surface of the substrate and the back surface of the light-emitting chip, penetrates the resin, and electrically connects the substrate and the light-emitting chip, and a light-emitting surface (surface) (151) of the light-emitting chip is exposed from the resin, and the light-emitting surface (surface) and a surface (161) of the resin are arranged on the same plane .

According to the above configuration, the light emitting chip can be held in a horizontal state by the electrode material and the resin. In addition, the size of the light emitting segment of the semiconductor module can be reduced to the size of the light emitting chip itself, so that high resolution can be performed on the light emitting segment.

A semiconductor module (1) according to embodiment 2 of the present invention is characterized by comprising a substrate (wiring board 11), a plurality of light emitting chips (blue LEDs 15) mounted side by side on the substrate, a resin (16) that covers side surfaces and back surfaces of the plurality of light emitting chips and holds the plurality of light emitting chips horizontally, an electrode material (electrode 14) that is provided between a surface of the substrate and the back surfaces of the plurality of light emitting chips, penetrates the resin, and electrically connects the substrate and the plurality of light emitting chips, and light emitting surfaces (surfaces) (151) of the plurality of light emitting chips are exposed from the resin, and the light emitting surfaces (surfaces) and a surface (161) of the resin are arranged on the same plane .

According to the above configuration, all of the plurality of light emitting chips can be maintained in a horizontal state by the electrode material and the resin, whereby a sense of incongruity of the light emitting segments due to inclination of light emitting chips can be prevented.

In the semiconductor module according to aspect 3 of the present invention, in aspect 1 or 2, the light emitting chip has a vertical width and a lateral width of 20 μm or less in a plan view.

In the semiconductor module according to mode 4 of the present invention, in mode 1 or 2, the substrate includes a metal wiring, the electrode material includes a th portion (substrate-side electrode 141) connected to the metal wiring and a second portion (LED-side electrode 142) connected to the light emitting chip, and a th area of a cross section parallel to a light emission direction in the th portion is different from a second area of a cross section parallel to the light emission direction in the second portion.

In the semiconductor module according to mode 5 of the present invention, in mode 4, the th area is larger than the second area.

According to the above configuration, since a fixing force of pressing the second portion of the electrode against the substrate is applied to the electrode, the light emitting chip can be further fixed steps on the substrate.

In the semiconductor module according to mode 6 of the present invention, in mode 1 or 2, the resin is composed of at least two layers including an th layer and a second layer, the th layer is a th resin (white resin 162) disposed on the substrate side, and the second layer is a second resin (black resin 163) disposed on the th resin and having a lower light reflectance than the th resin.

According to the above configuration, light leakage to the periphery of the light emitting chip can be prevented.

A display device according to aspect 7 of the present invention is characterized by including the semiconductor module according to any one of aspects 1 to 6 as defined in .

The manufacturing method of embodiment 8 of the present invention is a manufacturing method of the semiconductor module of any of embodiments 1 to 6, including a step of filling a liquid resin between the substrates at a temperature included in a temperature range of 50 to 200 ℃ before curing.

According to the above configuration, it becomes easy to normally fill the liquid resin in the gap between the substrates.

The method of manufacturing embodiment 9 of the present invention is characterized in that, in embodiment 8, the temperature range is 80 to 170 ℃.

According to the above configuration, the possibility of impairing the properties (adhesiveness, heat dissipation, etc.) of the cured resin can be reduced.

The method of manufacturing embodiment 10 of the present invention is characterized in that, in embodiment 8, the temperature range is 100 to 150 ℃.

With this configuration, variations among products in the above-described characteristics of the cured resin can be further reduced by steps, and thus the semiconductor module can be easily manufactured.

A method of manufacturing a semiconductor module according to mode 11 of the present invention is characterized in that in any of modes 8 to 10, the semiconductor module includes a substrate having metal wiring, an electrode disposed on the substrate and connected to the metal wiring, a light emitting element disposed on the electrode and having a light emitting surface on the opposite side to the substrate, a resin covering at least a portion of a side surface of the light emitting element and a step portion of the electrode on the substrate, and at least portions of adjacent light emitting elements are connected to each other on the light emitting surface side of the light emitting element.

According to the above configuration, the surface of the semiconductor module can be made smoother.

The semiconductor module according to embodiment 12 of the present invention is characterized by comprising a substrate (wiring substrate 11) having a metal wiring (12), an electrode (14) disposed on the substrate and connected to the metal wiring, and a light emitting element (blue LED15) connected to the electrode and having a light emitting surface on the opposite side to the substrate, wherein the electrode has a step portion on a side surface of the electrode, and further comprises a resin (resin 16) covering at least a portion of the side surface of the light emitting element and the step portion on the substrate.

With this configuration, the light-emitting element and the electrode can be fixed more strongly to the substrate on which the light-emitting element is mounted.

In the semiconductor module according to mode 13 of the present invention, in mode 12, the light emitting surface of the light emitting element and the surface of the resin are substantially the same as surfaces.

According to the above configuration, light emission from the light emitting element can be prevented, and therefore, the light emitting efficiency of the light emitting element can be improved.

The semiconductor module according to embodiment 14 of the present invention includes a substrate having a metal wiring, an electrode disposed on the substrate and connected to the metal wiring, a light emitting element disposed on the electrode and having a light emitting surface on the opposite side to the substrate, and a resin covering at least portions of side surfaces of the light emitting element and a step portion of the electrode on the substrate, wherein at least portions of adjacent light emitting elements are connected to each other on the light emitting surface side of the light emitting element.

According to the above configuration, the surface of the semiconductor module can be made smoother.

The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention. It is also possible to form new technical features by combining technical means disclosed in the respective embodiments.

Description of the reference numerals

1 semiconductor module

11 wiring board

12 metal wiring

13 insulating layer

14 electrodes

15a light emitting surface

16 resin

17 holding force

18 growth substrate

19 separating tank

31 Red phosphor

32 Green phosphor

33 light-transmitting resin

41 partial region

42 center point

43 light emission range

Curve 51

141 substrate side electrode ( th part)

142 LED side electrode (second part)

151 light emitting surface

161 surface

162 white resin

163 black-based resin