阅读说明：本技术 纳米结构 (Nano-structure ) 是由 B·O·M·费姆兰 H·韦曼 D·任 于 2018-04-10 设计创作，主要内容包括：本发明涉及一种物质组合物,其包含至少一种纳米结构,该纳米结构外沿地生长于视情况掺杂的β-Ga<Sub>2</Sub>O<Sub>3</Sub>衬底上,其中该纳米结构包含至少一种第III-V族化合物。(The invention relates to a composition of matter comprising at least one nanostructure grown peripherally from optionally doped beta-Ga 2 O 3 A substrate, wherein the nanostructure comprises at least one group III-V compound.)

1. A composition of matter comprising at least one nanostructure grown epitopically from optionally doped β -Ga₂O₃On the substrate of the substrate,

wherein the nanostructure comprises at least one group III-V compound.

2. The composition of matter of claim 1, wherein the at least one nanostructure is doped, e.g., p-type doped.

3. The composition of matter of claim 1, wherein the at least one nanostructure comprises a radial or axial heterostructure.

4. A composition of matter comprising:

at least one core semiconductor nanostructure grown peripherally from optionally doped beta-Ga₂O₃A substrate, wherein the nanostructure comprises at least one group III-V compound;

a semiconductor shell surrounding the core nanostructure, the shell comprising at least one group III-V compound;

the core semiconductor nanostructure is doped to form an n-type or p-type semiconductor; and

the shell is doped to form a p-type semiconductor or an n-type semiconductor opposite the core; and

an outer conductive coating surrounding at least a portion of the shell forming the electrode contact.

5. A composition of matter comprising:

at least one semiconductor nanostructureGrown peripherally from optionally doped beta-Ga₂O₃A substrate, wherein the nanostructure comprises at least one group III-V compound;

the semiconductor nanostructure is doped such that the nanostructure contains axial n-type and p-type semiconductor regions.

6. The composition of matter of any of claims 1 to 5, wherein the nanostructure is selected from (-201) or (100) β -Ga₂O₃And growing the substrate in a plane.

7. The composition of matter of any one of the preceding claims, wherein the nanostructure comprises a group III-N compound.

8. The composition of matter of any of the preceding claims, wherein the nanostructure comprises GaN, AlN, AlGaN, InGaN, or AlInGaN.

9. The composition of matter of any one of the preceding claims, wherein the nanostructures are nanowires or nanopyramids.

10. The composition of matter of claim 9, wherein the nanowires have a diameter of no more than 400nm and a length of at most 5 microns, such as at most 2 microns.

11. The composition of matter of any one of the preceding claims, wherein the substrate comprises a plurality of nanowires and wherein the nanowires are preferably substantially parallel.

12. The composition of matter of any one of the preceding claims, further comprising a doped or undoped group III-V buffer layer positioned between the substrate and the nanostructure.

13. The composition of matter of claim 12, wherein the buffer layer is doped or undoped GaN.

14. The composition of matter of any one of the preceding claims, further comprising an aperture patterned mask on the substrate, wherein the nanostructures are grown through apertures of the mask.

15. The composition of matter of any one of the preceding claims, further comprising a hole patterning mask on the substrate, a doped or undoped group III-V compound buffer layer in the holes of the mask, wherein the nanostructures are grown from the buffer layer through the holes of the mask.

16. A composition of matter comprising at least one nanostructure grown epitaxially on a substrate comprising a doped or undoped group III-V compound buffer layer, such as a doped or undoped GaN buffer layer, and optionally doped beta-Ga₂O₃A layer of a material selected from the group consisting of,

wherein the nanostructure comprises at least one group III-V compound.

17. A composition of matter comprising at least one nanostructure grown epitopically on a substrate comprising optionally doped β -Ga₂O₃A layer, the substrate bearing a hole patterned mask layer through which the nanostructures grow,

wherein the nanostructure comprises at least one group III-V compound, and wherein the bottom of a hole of the hole patterned mask layer adjacent to the substrate is coated with a doped or undoped group III-V compound buffer, such as a GaN buffer.

18. A device comprising a composition of matter as claimed in any one of claims 1 to 17, such as an electronic device, in particular an optoelectronic device, for example a solar cell, a photodetector, an LED or a laser diode.

19. A light emitting diode device, comprising:

a plurality of epitaxial growth on doped beta-Ga₂O₃A nanostructure on a substrate, the nanostructure having a p-n or p-i-n junction,

a first electrode formed with the beta-Ga₂O₃Substrate electrical contact;

a second electrode, optionally in the form of a light reflective layer, in contact with the top of at least a portion of the nanostructures;

wherein the nanostructure comprises at least one group III-V compound semiconductor.

20. A light emitting diode device, comprising:

a plurality of epitaxial growth on doped beta-Ga₂O₃Nanostructures on the substrate, preferably through the doped beta-Ga₂O₃Optionally holes on the substrate patterning the holes of the mask, said nanostructure having a p-n or p-i-n junction,

a first electrode formed of the doped beta-Ga₂O₃Substrate electrical contact;

a light reflecting layer in contact with the top of at least a portion of the nanostructures or with a second electrode in electrical contact with the top of at least a portion of the nanostructures, the light reflecting layer optionally serving as the second electrode;

a second electrode in electrical contact with a top of at least a portion of the nanostructures, the second electrode being necessary when the light reflecting layer does not act as an electrode;

wherein the nanostructure comprises at least one group III-V compound semiconductor; and wherein, in use, light is emitted from the device in a direction substantially opposite to the light reflecting layer.

21. A light emitting diode device, comprising:

a plurality of epitaxial growth on doped beta-Ga₂O₃Nanostructures on a substrate, preferably through an optional hole-patterned mask on the substrateA pore, the nanostructure having a p-n or p-i-n junction,

a first electrode in electrical contact with the substrate;

a light reflecting layer in contact with the top of at least a portion of the nanostructures, the light reflecting layer optionally serving as a second electrode;

a second electrode in electrical contact with a top of at least a portion of the nanostructures, the second electrode being necessary when the light reflecting layer does not act as an electrode;

wherein the nanostructure comprises at least one group III-V compound semiconductor; and wherein, in use, light is emitted from the device in a direction substantially opposite to the light reflecting layer.

22. A nanostructured LED comprising a plurality of peripherally grown doped β -Ga₂O₃A III-V compound semiconductor nanostructure on a substrate, wherein

Each of the nanostructures protruding from the substrate and each nanostructure comprising a p-n or p-i-n junction;

a top portion of at least a portion of the nanostructures covered with a light reflective or transparent contact layer to form at least one contact with a population of nanostructures;

an electrode and the doped beta-Ga₂O₃Substrate electrical contact;

the light reflective or transparent contact layer is in electrical contact with the first electrode via the nanostructures.

23. Process for preparing at least one optionally doped beta-Ga grown epitopically₂O₃A method of nanostructures on a substrate, the method comprising the steps of:

(I) providing a group III-V element to beta-Ga₂O₃A surface of a substrate; and

(II) from the beta-Ga₂O₃At least one nanostructure is grown peripherally to the surface of the substrate.

24. The method of claim 23 which is uncatalyzed.

25. The method of claim 23 or 24, wherein the substrate is coated with an aperture-patterned mask.

26. The method of claim 25, wherein the hole patterning mask comprises Ti, SiO deposited, for example, by e-beam evaporation, CVD, PE-CVD, or sputtering₂Or Si₃N₄。

27. A light detector device, such as a UV light detector device, comprising:

a plurality of n- (p) -doped beta-Ga grown along the periphery₂O₃A nanostructure on a substrate, the nanostructure being p- (n) -doped;

a first electrode formed of the doped beta-Ga₂O₃Substrate electrical contact;

a second electrode, optionally in the form of a light reflective layer, in contact with the top of at least a portion of the nanostructures;

wherein the nanostructure comprises at least one group III-N compound semiconductor;

and wherein in use light is emitted from the beta-Ga in the device₂O₃The substrate side is absorbed.

28. The photodetector device of claim 27, wherein the plurality of nanostructures are grown through the n- (p) -doped β -Ga₂O₃The apertures of the mask are patterned over the substrate as appropriate.