阅读说明：本技术 一种用于控制vcsel阵列产生均匀的平顶远场的方法 (Method for controlling VCSEL array to generate uniform flat-top far field ) 是由 张�成 梁栋 霍轶杰 于 2019-11-20 设计创作，主要内容包括：本发明提供了一种用于控制VCSEL阵列产生均匀的平顶远场的方法,通过执行该方法,能够使得相对于传统的VCSEL阵列,在不需要设置漫射器等光学元件的条件下即可很容易地实现均匀的平顶远场,从而在良好满足TOF测量,以及实现一个VCSEL芯片可控的出现多种远场形状,以使用于不同的应用场景等需要的同时,显著降低了阵列及相应的模组成本,并具有了现有技术中所不具备的诸多有益效果。(The invention provides a method for controlling a VCSEL array to generate a uniform flat far field, which can easily realize the uniform flat far field without arranging optical elements such as a diffuser and the like compared with the traditional VCSEL array, thereby well meeting TOF measurement and realizing that a VCSEL chip can be controlled to generate various far field shapes so as to obviously reduce the cost of the array and corresponding modules while being used for different application scenes and the like, and having a plurality of beneficial effects which are not possessed by the prior art.)

1. A method for controlling a VCSEL array to produce a uniform flat-topped far field, characterized by:

different currents are applied to VCSEL units in different areas on a VCSEL array comprising a plurality of VCSEL units, so that optical fields in the areas are mutually overlapped, a uniform flat-top far field is generated, and the change of the optical field of the VCSEL array in a time domain is realized.

2. The method of claim 1, wherein: the applying different currents comprises applying different current densities, or pulsed currents of different frequencies and/or duty cycles and/or phases.

3. The method of claim 1, wherein: the light emitting holes of the VCSEL units have the same shape and/or size.

4. The method of claim 3, wherein: the light emitting apertures of the VCSEL units comprise a combination of different shapes and/or sizes.

5. The method of claim 3, wherein: for each different current density, a separate current is specifically injected into the contact region to allow current to be injected with a different current density.

6. The method of claim 1, wherein: the VCSEL units are in parallel, series or individually controlled form.

7. The method of any preceding claim, wherein: the arrangement and the proportion of the VCSEL units to which different currents are applied are adjusted so as to realize flat top far fields with different shapes.

Technical Field

The invention relates to the technical field of Vertical Cavity Surface Emitting Lasers (VCSELs), in particular to a method for controlling a lensless VCSEL unit to generate a uniform flat-top far field.

Background

At present, in a plurality of intelligent devices such as smart phones, there is a great market demand for a flat-top infrared Illumination (IR) projection module, which plays a crucial role in specific applications such as TOF measurement and security camera equipment, and a Vertical Cavity Surface Emitting Laser (VCSEL) is the most central device in the flat-top IR projection module.

Existing flat-top infrared illumination projection modules typically structurally include a VCSEL array in combination with optics such as a diffuser (diffuser). The emission aperture of a typical VCSEL array is usually rectangular or circular, and the spatial light distribution (far field) obtained by some existing control methods is usually gaussian or circular, and the far field is non-uniform and cannot meet the requirements of TOF measurement, etc., so that the shapes need to be changed into rectangular or circular flat-top intensity distribution (flat-top field), i.e. uniform light intensity distribution, by a diffuser. The above-mentioned existing module structure, due to the arrangement of optical devices such as diffusers, has a severe requirement for the precision of assembly between the components, which increases the complexity of the structure and the production process, and in order to support such an optical system, a rigid frame with side walls is also required to support the VCSEL array and the optical elements, so as to provide a minimum spacing (typically 0.3-0.5 mm) between the two components, and the total thickness of the module is typically close to 1 mm, which eventually makes it difficult to further reduce the thickness and volume of the device such as a mobile phone for which it is specifically applied. In addition, in many application fields such as the security camera field, different applications such as TOF, infrared light local feature and full-field illumination need to be integrated, and the applications generally need to be realized by respectively different VCSEL modules. Therefore, it is an urgent problem in the art to provide a VCSEL array control method that can generate a uniform far field without relying on optical devices such as a diffuser, and is suitable for different application scenarios, thereby significantly reducing the cost of the IR module and the device to which the IR module is applied.

Disclosure of Invention

In view of the above technical problems in the prior art, the present invention provides a method for controlling a VCSEL array to generate a uniform flat-top far field, the method comprising:

applying currents with different intensities to VCSEL units in different areas on a VCSEL array comprising a plurality of VCSEL units, wherein the currents are used for enabling the light fields in the areas to be mutually superposed to generate a uniform flat-top far field;

because the current density of the given luminous hole is larger, the observed far field divergence angle is larger, and based on the thought, the invention can realize more uniform flat-top far field distribution by overlapping the far fields with annular or Gaussian distribution generated in different areas;

because the larger the current density is, the larger the intensity of the far field is, and the larger the divergence angle is, in a certain current density range, the different current densities are set for the VCSEL units with the light emitting holes of different shapes and/or sizes, so that the uniformity of the far field after superposition can be adjusted, and more uniform flat top far field distribution can be realized.

Further, the light emitting holes of the VCSEL units have the same shape and/or size.

Further, the light emitting apertures of the VCSEL units comprise a combination of different shapes and/or sizes.

Given the same current density, there is a relationship that the smaller the light emitting aperture, the smaller the far field scattering angle.

Thus, further, the VCSEL units are arranged to have different currents, respectively, the different applied currents comprising different current densities, or pulsed currents of different frequencies and/or duty cycles and/or phases.

Wherein the same size of aperture size can produce different far field distributions at different current densities. Superimposing them in a certain quantitative ratio can produce a circular flat-topped illumination field.

Further, for each different current density, a separate current is specifically injected into the contact region to allow current to be injected with the different current density.

Further, the VCSEL units are in parallel, series, or individually controlled form.

Compared with the traditional VCSEL array, the method provided by the invention can easily realize a uniform flat-top far field under the condition of not arranging optical elements such as a diffuser and the like, thereby obviously reducing the cost of the array and a corresponding module. Meanwhile, due to the elimination of the diffuser, corresponding components such as the side wall columns, the diffuser cover and the like are also omitted, so that the thickness of the module can be reduced from about 1.5mm to 0.5 mm.

Drawings

Fig. 1 shows a far-field superposition of two circular aperture light emitters with different current density magnitudes.

Fig. 2 is a principle of a relationship between current density, light emitting aperture and divergence angle.

Figure 3 is a far field superposition of VCSEL arrays with three different shapes and sizes of light emitting apertures of different current density magnitudes.

Figure 4 is a diagram of several methods of time domain modulation of two regions (region a and region B) of a VCSEL array with different pulsed currents.

Detailed Description

The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.

The invention provides a method for controlling a VCSEL array to generate a uniform flat-top far field without arranging a diffuser (diffuser), which comprises the following steps:

applying currents of different intensities to VCSEL units in different areas of a VCSEL array comprising a plurality of VCSEL units, so that the optical fields in the areas are mutually superposed to generate a uniform flat-top far-field

In fig. 1, a preferred embodiment of the present invention is shown, with the far field distribution resulting from the far field superposition of two circular aperture light emitters with different current density magnitudes. The greater current density was J1, the lesser current was J2, with J1 ordered to the left and J2 ordered to the right. It can be seen that the far fields of the individual VCSEL units are non-uniform, such as a ring or gaussian distribution, and the far field distributions generated by superimposing them in a certain number ratio in the array are more uniform. By designing the proportions and arrangement of the VCSEL units, it can be seen that a preferred circular flat-topped far field distribution is achieved.

As shown in fig. 2, which illustrates a principle on which the solution of the invention is based, it can be seen that the smaller the light emitting aperture, the smaller the experimentally observed far field divergence angle, given the same current density. The greater the current density, the greater the experimentally observed far field divergence angle, given the light emitting aperture.

Another preferred embodiment of the present invention, illustrated in fig. 3, provides a far field distribution resulting from the superposition of the far fields of light emitters having three different light emitting aperture shapes and sizes of different current density magnitudes. The larger current density is J1, the smaller current density is J3, and J2 is between J1 and J3. J1, J2 and J3 were arranged in order on the left, middle and right, respectively. It can be seen that the far fields of the individual VCSEL units are in the form of non-uniform distributions, such as internally depressed rectangles or gaussian-like elliptical distributions, while the far field distributions produced by superimposing them in a certain number ratio in the array are more uniform. By designing the proportions and arrangement of the VCSEL units, it can be seen that a preferred rectangular flat-topped far field distribution is achieved.

A far-field time domain control method is shown in fig. 4, for example, two pulses with same phase and multiple frequency, as shown in fig. 4(a), may have a part of periodic overlap, where the overlap is a flat-top far-field distribution, and the unit is independently lit up and has other far-field shapes, so that the alternating appearance of the flat-top and other shapes of far-fields (such as gaussian-like distribution) can be realized.

The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.