阅读说明：本技术 电激发光子晶体面射型雷射元件 (It is electrically excited photonic crystal surface emitting laser element ) 是由 林国瑞 徐铭扬 陈俞谌 于 2018-05-24 设计创作，主要内容包括：一种电激发光子晶体面射型雷射元件,包含：一电流局限结构,位在光子晶体结构及主动层上,并具有一孔径；一透明导电层,位在电流局限结构上,并覆盖光子晶体结构；一正电极金属,位在透明导电层上,并具有一金属孔；本发明直接从磊晶结构最上方往内部蚀刻来制作光子晶体,无需晶圆熔合或磊晶再成长的复杂技术,不仅可以使雷射光穿透,还同时具有导电性,进而得以电激发量子结构,再借由光子晶体结构,使光能从磊晶结构的正面出光,且具有远场发散角小等优异特性。(One kind being electrically excited photonic crystal surface emitting laser element, includes: an electric current confinement structure, and position has an aperture on photon crystal structure and active layers；One transparency conducting layer, position cover photon crystal structure on electric current confinement structure；One positive electrode metal, position over transparent conductive layer, and have a metal aperture；The present invention directly makes photonic crystal toward etched inside from epitaxial structure the top, the complex technology grown up again without wafer fusion or epitaxy, can not only laser light be made to penetrate, it is also conductive simultaneously, and then it is able to be electrically excited quantum structure, again by photon crystal structure, luminous energy is made to go out light from the front of epitaxial structure, and there are the excellent characteristics such as far-field divergence angle is small.)

1. one kind is electrically excited photonic crystal surface emitting laser element characterized by comprising

One substrate has the second surface of a first surface and opposite side；

Coating layer once, position is on the first surface of the substrate；

One active layers, position have a quantum structure on the lower coating layer；

Coating layer on one, position is in the active layers；

One contact layer, position in high bench-type and are equipped with several air with coating layer on this and the contact layer on this on coating layer Hole forms a photon crystal structure, and the upper surface of the photon crystal structure sets one first presumptive area；

One electric current confinement structure, position have an aperture on the photon crystal structure and the active layers, and the aperture corresponds to and is somebody's turn to do First presumptive area of photon crystal structure makes current direction be confined to the first presumptive area of the photon crystal structure；

One transparency conducting layer, position cover in the first presumptive area of the photon crystal structure on the electric current confinement structure, and The upper surface of the transparency conducting layer sets one second presumptive area, position and the photon crystal structure of second presumptive area Corresponding relationship up and down is presented in the position of first presumptive area；

One positive electrode metal, position have a metal aperture, and the metal aperture corresponds to the transparency conducting layer on the transparency conducting layer The second presumptive area, so that the metal aperture is not covered the first presumptive area of the photon crystal structure；And

One back electrode metal, position is on the second surface of the substrate；Whereby, the positive electrode metal, the transparency conducting layer, the electric current Confinement structure and the back electrode metal cooperate, and then are electrically excited the quantum structure, then can face by the photon crystal structure Project laser in the first presumptive area of the photon crystal structure, the aperture of the electric current confinement structure, the transparency conducting layer the Outside two presumptive areas to the metal aperture of the positive electrode metal.

2. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the upper coating layer Thickness range be 10~500nm.

3. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the air hole Two-dimensional array can be arranged in.

4. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the electric current limitation The material of structure may include selected from silicon nitride, silica, polyimides is any is constituted.

5. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the electrically conducting transparent Layer material may include selected from tin indium oxide, antimony tin, fluorine-doped tin oxide, aluminum zinc oxide, gallium oxide zinc, indium zinc oxide, Zinc oxide is any to be constituted.

6. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the quantum structure It may include an at least quantum dot layer.

7. according to claim 6 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the quantum dot layer Material may include selected from indium arsenide, gallium nitride, InGaAsP, InGaN, InGaP, aluminium arsenide gallium indium, phosphatization gallium aluminium Indium, gallium arsenide-phosphide indium is any is constituted.

8. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the quantum structure Including an at least quantum well layers.

9. according to claim 8 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the quantum well layers Material include selected from indium arsenide, gallium nitride, InGaAsP, InGaN, InGaP, aluminium arsenide gallium indium, AlGaInP, Gallium arsenide-phosphide indium is any to be constituted.

10. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the substrate with It include being equipped with a buffer layer between the lower coating layer.

11. according to claim 10 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the buffer layer It include being equipped with one first graded bedding between the lower coating layer.

12. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the lower coating It is heterogeneous including opening limitation layer equipped with one first point between layer and the active layers；The active layers and on this between coating layer include be equipped with One second point open limitation layer it is heterogeneous.

13. according to claim 1 be electrically excited photonic crystal surface emitting laser element, which is characterized in that the upper coating It include being equipped with one second graded bedding between layer and the contact layer.

Technical field

The present invention is that related one kind is electrically excited photonic crystal surface emitting laser element, positive electrode metal, transparency conducting layer, The mutual cooperation of electric current confinement structure, and then it is electrically excited quantum structure, then by photon crystal structure, make luminous energy from epitaxial structure Front go out light.

Background technique

Photonic crystal (Photonic crystal, PC) is a kind of artificial crystal, or makees metamaterial (Metamaterials), the refractive index of this crystal spatially has periodic distribution, and characteristic is similar to solid crystals. Periodical potential and boundary condition are introduced into Xue Dingge equation, closed by the dispersion of the solution available solid crystals of Characteristic Problem It is (Dispersion relation), or makees band structure (Band Structure).As a same reason, by periodic refractive Rate distribution and boundary condition introduce Maxwell (Maxwell) equation, solve the energy band of the available photonic crystal of Characteristic Problem Structure.The dissemination of electromagnetic wave in the photonic crystal is similar to the electronics in solid crystals, and the electromagnetic wave of specific frequency can not In the presence of in the photonic crystal, that is, the energy gap (Band gap) being similar in solid crystals, the referred to as band of forbidding manufacture of photonic crystal (Forbidden band).Photonic crystal can control the dissemination of light, and application range is very extensive, such as photonic crystal The related applications such as laser, photonic crystal fiber.

It holds, photonic crystal laser is broadly divided into two kinds, deficiency laser (Defect lasers) and band edge type thunder Penetrate (Band-edge lasers).The operating frequency of deficiency laser is in the band of forbidding manufacture of photonic crystal, in photon crystal structure It is middle to remove one or several lattice-sites as defect, it is confined to electromagnetic wave in defect and then forms laser resonant cavity, this thunder The advantages of penetrating is to have high quality factor (Quality factor), lower threshold condition etc..And band edge type laser It is leveled off to using the group velocity of band edge energy state and zero realizes slower rays (Slow light) effect, make photon in the photonic crystal Life cycle (Life time) it is elongated, the reciprocation being enhanced between photon and gain media.Since this laser will Operating frequency designs in the flat energy state of band edge, rather than the energy state in band of forbidding manufacture, therefore resonance zone is no longer confined to It in minimum volume, is able to be extended to entire photonic crystal region, realizes the resonance of the large area people having the same aspiration and interest.On the other hand, due to photon The special diffraction phenomenon of crystal, light not only couple in photonic crystal plane, also can be around injection photonic crystal plane, it is possible to Achieve the effect that light (Surface emission) is projected in face.The advantages of this laser, has face to project light, large area goes out light, smaller The angle of divergence, high-power output and be easy to make the excellent characteristics such as two-dimentional laser array.

Secondary person, photonic crystal laser can be divided into light excitation according to excitation source and excite laser will be high with laser, light is electrically excited Power laser source imports a large amount of electron-holes of component generation and reaches laser phenomenon to (Electron-hole pair)；Electric shock Hair laser then utilizes additional power source to supply electrons and holes, in practical application based on electric shock hairdo, however the hole of photonic crystal Hole structure becomes difficult electric current injection, needs to consider the transmission path and distribution problem of carrier, so exciting laser than light Hardly possible is realized.By review of literature it can be seen that the processing procedure mode for being electrically excited laser can be roughly divided into two kinds: wafer fuses (Wafer Fusion) grow up (Regrowth) again with epitaxy.The former was fused in 1999 using wafer by Kyoto University Noda et al. for the first time Technology at high temperature under high pressure engages two wafers, the behaviour of successful presentation InGaP/InP multiple quantum trap laser at room temperature Make, peak power output of the laser under the operation of current impulse wave is more than 20mW, and far-field divergence angle is less than 1.8 degree；The latter is It was delivered by Noda et al. in 2014, the technology grown up again using epitaxy successfully produces a watt grade (Watt-class) InGaAs/AlGaAs multiple quantum trap laser, electric current continuous wave operation at room temperature, peak power output can be up to 1.5W, the angle of divergence is less than 3 degree.

But look into, due to related production at present be electrically excited the correlative study of photonic crystal laser with wafer fusion and epitaxy again at Based on length, however both manufacturing methods need more complex technology.Therefore the present inventor conceives in view of problem is above taken off One kind being electrically excited photonic crystal surface emitting laser element, and wishes to complete in a simpler manner, and the present invention is intended to solve Project.

Summary of the invention

Technical problem underlying to be solved by this invention is, overcomes drawbacks described above of the existing technology, and provides one Kind is electrically excited photonic crystal surface emitting laser element, and photon crystalline substance is directly made toward etched inside from epitaxial structure the top Body, and using tin indium oxide as electrode structure, the manufacturing method thereof for successfully avoiding the fusion of prior art wafer from growing up again with epitaxy, no Can only laser light be made to penetrate, it is also conductive simultaneously, so being very suitable for wall emission laser.

The technical solution adopted by the present invention to solve the technical problems is:

One kind being electrically excited photonic crystal surface emitting laser element, comprising: a substrate has a first surface and opposite side Second surface；Coating layer once, position is on the first surface of the substrate；One active layers, position have on the lower coating layer One quantum structure；Coating layer on one, position is in the active layers；One contact layer, position is on this on coating layer, and with coating layer on this And the contact layer in high bench-type and is equipped with several air holes, forms a photon crystal structure, and the photon crystal structure is upper One first presumptive area of surface set；One electric current confinement structure, position have one on the photon crystal structure and the active layers Aperture, and the aperture corresponds to the first presumptive area of the photon crystal structure, and current direction is made to be confined to the photon crystal structure The first presumptive area；One transparency conducting layer, position cover the first pre- of the photon crystal structure on the electric current confinement structure Determine on region, and the upper surface of the transparency conducting layer sets one second presumptive area, the position of second presumptive area and the light Corresponding relationship up and down is presented in the position of first presumptive area of sub- crystal structure；One positive electrode metal, position is in the transparency conducting layer On, and there is a metal aperture, and the metal aperture corresponds to the second presumptive area of the transparency conducting layer, and the metal aperture is made not cover this First presumptive area of photon crystal structure；And a back electrode metal, position is on the second surface of the substrate；Whereby, this is being just Electrode metal, the transparency conducting layer, the electric current confinement structure and the back electrode metal cooperate, and then are electrically excited the Quantum Junction Structure, then can first presumptive area, electric current limitation of the face injection laser in the photon crystal structure by the photon crystal structure Outside the aperture of structure, the second presumptive area to the metal aperture of the positive electrode metal of the transparency conducting layer.

In a preferred embodiment, thickness range of coating layer is 10~500nm on this.

In a preferred embodiment, which is arranged in two-dimensional array.

In a preferred embodiment, the material of the electric current confinement structure include selected from silicon nitride, silica, polyimides its In any constituted.

In a preferred embodiment, the material of the transparency conducting layer includes being selected from tin indium oxide, antimony tin, Fluorin doped oxygen Change that tin, aluminum zinc oxide, gallium oxide zinc, indium zinc oxide, zinc oxide is any is constituted.

In a preferred embodiment, which includes an at least quantum dot layer.

In a preferred embodiment, the material of the quantum dot layer includes being selected from indium arsenide, gallium nitride, InGaAsP, nitridation Indium gallium, InGaP, aluminium arsenide gallium indium, AlGaInP, gallium arsenide-phosphide indium is any is constituted.

In a preferred embodiment, which includes an at least quantum well layers.

In a preferred embodiment, the material of the quantum well layers includes being selected from indium arsenide, gallium nitride, InGaAsP, nitridation Indium gallium, InGaP, aluminium arsenide gallium indium, AlGaInP, gallium arsenide-phosphide indium is any is constituted.

It in a preferred embodiment, include being equipped with a buffer layer between the substrate and the lower coating layer.

It in a preferred embodiment, include being equipped with one first graded bedding between the buffer layer and the lower coating layer.

In a preferred embodiment, different including opening limitation layer equipped with one first point between the lower coating layer and the active layers Matter；The active layers and on this between coating layer include be equipped with one second point open limitation layer it is heterogeneous.

It in a preferred embodiment, include being equipped with one second graded bedding between coating layer and the contact layer on this.

By technological means is above taken off, using tin indium oxide as the transparency conducting layer, and the electric current confinement structure control of arranging in pairs or groups Current distribution processed and the boundary losses for slowing down the photon crystal structure, the electroluminescence of successful presentation ambient operation.

The invention has the advantages that it directly makes photonic crystal toward etched inside from epitaxial structure the top, and Using tin indium oxide as electrode structure, the manufacturing method thereof for successfully avoiding the fusion of prior art wafer from growing up again with epitaxy not only may be used So that laser light penetrates, and it is also conductive simultaneously, so being very suitable for wall emission laser.

Detailed description of the invention

Present invention will be further explained below with reference to the attached drawings and examples.

Figure 1A is the schematic diagram of epitaxial structure of the present invention.

Figure 1B is the schematic diagram that the present invention makes rigid mask.

Fig. 1 C is the schematic diagram that the present invention defines photonic crystal pattern.

Fig. 1 D is the schematic diagram of transfer photonic crystal figure of the present invention.

Fig. 1 E is the schematic diagram that the present invention removes rigid mask.

Fig. 1 F is the schematic diagram that the present invention etches plateau.

Fig. 1 G is the schematic diagram of present invention production electric current confinement structure.

Fig. 1 H is the schematic diagram of present invention production transparency conducting layer.

Fig. 1 I is schematic diagram of the groove of the present invention as isolation boundary.

Fig. 1 J is the schematic diagram of substrate wear down of the present invention.

Fig. 1 K is the schematic diagram of positive electrode metal deposit of the present invention.

Fig. 1 L is the schematic diagram of back electrode metal deposit of the present invention.

Fig. 2A is the electron microscope picture that photon crystal structure of the present invention is overlooked.

Fig. 2 B is the electron microscope picture of photon crystal structure side view of the present invention.

Fig. 3 is the schematic diagram of another preferred embodiment of the present invention.

Fig. 4 A is the schematic diagram of quantum structure of the present invention.

Fig. 4 B is the schematic diagram of quantum structure another preferred embodiment of the present invention.

Fig. 5 is top view of the invention.

Fig. 6 is the electron microscope picture of side view of the present invention.

Figure label explanation:

10A, 10B are electrically excited photonic crystal surface emitting laser element

11 substrates

111 first surfaces

112 second surfaces

12 lower coating layers

13 active layers

131 quantum structures

131A quantum dot layer

131B quantum well layers

1311 quantum dots

1312 coatings

1313 walls

Coating layer on 14

141 air holes

15 photon crystal structures

The upper surface of 151 photon crystal structures

16 electric current confinement structures

161 apertures

17 transparency conducting layers

The upper surface of 171 transparency conducting layers

18 positive electrode metals

181 metal apertures

19 negative electrode metals

A₁First presumptive area

A₂Second presumptive area

B buffer layer

C contact layer

F photonic crystal pattern

G₁First graded bedding

G₂Second graded bedding

L₁Length of outer side

L₂Inside length

The rigid mask of M

The positive photoresist of R

S₁First separately limits to layer heterojunction structure

S₂Second separately limits to layer heterojunction structure

T groove

W epitaxial structure

The a period

Specific embodiment

Firstly, please referring to shown in Figure 1A~Fig. 1 L, one kind of the invention is electrically excited photonic crystal surface emitting laser (Electrically Pumped Photonic-Crystal Surface-Emitting Lasers) component 10A is preferably implemented Example, include: a substrate (substrate) 11 has the second surface 112 of a first surface 111 and opposite side, the present embodiment In, the material of the substrate 11 include selected from gallium nitride (GaN), GaAs (GaAs), indium phosphide (InP) is any is constituted, But not limited thereto.

Coating layer (Cladding layer) 12 once, position is on the first surface 111 of the substrate 11, in the present embodiment, The material of the lower coating layer 12 includes being selected from aluminum gallium arsenide (AlGaAs), GaAs (GaAs), aluminium gallium nitride alloy (AlGaN), arsenic Gallium aluminium indium (AlGaInAs), AlGaInP (AlGaInP) is any is constituted, and but not limited thereto.

One active layers 13, position have a quantum structure (Quantum Structure) 131 on the lower coating layer 12.

Coating layer (Cladding layer) 14 on one, position is in the active layers (active region) 13, the present embodiment In, thickness range of coating layer 14 is 10~500nm on this, and cooperating the material of coating layer 14 on this includes selected from aluminum gallium arsenide (AlGaAs), GaAs (GaAs), aluminium gallium nitride alloy (AlGaN), aluminium arsenide gallium indium (AlGaInAs), AlGaInP (AlGaInP) any to be constituted, but not limited thereto.

One contact layer (Contact layer) (C), position is on this on coating layer 14, in the present embodiment, the contact layer (C) Material include selected from gallium nitride (GaN), GaAs (GaAs), phosphorus InGaAsP (InGaAsP) is any is constituted, but not It is defined in this.

Shown in Figure 1A, the substrate 11, the lower coating layer 12, the active layers 13, coating layer 14 and the contact layer (C) on this An epitaxial structure (W) is formed, the number of plies of epitaxy growth is not limited.

Shown in Figure 1B, a rigid mask (Hard mask) (M), the deposited silicon nitride on the epitaxial structure (W) are made (Silicon Nitride, SiNx), but not limited thereto.

Shown in Fig. 1 C, define a photonic crystal pattern (F), the one positive photoresist (R) of spin coating on the epitaxial structure (W), it The photonic crystal pattern (F) is defined on the positive photoresist (R) afterwards, the square that photonic crystal region is 290 μm, but unlimited Due to this.

Shown in Fig. 1 D, the photonic crystal pattern (F) is shifted, the photonic crystal pattern (F) is first transferred into the rigid cover In curtain (M), and after removing the positive photoresist (R), then the photonic crystal pattern (F) is transferred into the epitaxial structure (W), due to this Most of light field of guided mode is confined to the region of the active layers 13 by quantum structure 131, thus etch depth need it is deeper Stronger stiffness of coupling can be obtained, when etch depth is greater than 500nm, then photonic crystal just has preferable coupling efficiency, but It is not limited to this.

Shown in Fig. 1 E, the rigid mask (M) is removed, but not limited thereto.

Shown in Fig. 1 F, 310 μm of square plateau is defined using yellow light process, and etch depth is about 450nm, enable Coating layer 14 and the contact layer (C) in plateau (Mesa) type and are equipped with several air holes (air hole) 141 on this, form one Photon crystal structure 15, and the upper surface 151 of the photon crystal structure 15 sets one first presumptive area (A₁), and etch height The purpose of platform be help light limitation in the photonic crystal with reduce leakage current, in the present embodiment, the week of the photon crystal structure 15 Phase (a) is constituted by 385nm, 388nm, 390nm, 393nm, 395nm are any, and but not limited thereto.In addition, Fig. 2A and figure Shown in 2B, respectively the shape of the air hole 141 be it is cylindrical, respectively the depth of the air hole 141 be 520nm~540nm and A diameter of 130~140nm, respectively the air hole 141 is arranged in two-dimensional array, and but not limited thereto.

Shown in Fig. 1 G, an electric current confinement structure 16 is made, because the photonic crystal with infinite period does not have theoretically Boundary (Boundary) effect, however the photonic crystal in practical application is limit cycle, so the boundary in crystal has Energy loss, if but photonic crystal area ratio component have gain area it is big, damage caused by boundary effect can be slowed down Consumption, and it is that can successfully generate laser phenomenon, therefore exist using yellow light process to three times that photonic crystal area, which is the two of gain area, First presumptive area (A of the photon crystal structure 15₁) middle define circular aperture (Aperture) pattern, it is straight Diameter is 150 μm, redeposited silicon nitride 120nm, and is removed extra silicon nitride using (Lift off) is lifted off, and enables the electric current office Limit structure 16, position have an aperture 161 on the photon crystal structure 15 and the active layers 13, and the aperture 161 corresponds to and is somebody's turn to do First presumptive area (A of photon crystal structure 15₁), so that current direction is confined to the first fate of the photon crystal structure 15 Domain (A₁), allow laser mode to be present in the photonic crystal of similar infinity, in the present embodiment, the material of the electric current confinement structure 16 Material include selected from silicon nitride (SiNx), silica (SiOx), polyimides (polyimide) is any is constituted, but unlimited Due to this.

Shown in Fig. 1 H, a transparency conducting layer 17 is made, since there is band edge type laser face to project light property, if Output optical zone domain covering large-area metal will affect laser and go out light, therefore utilize tin indium oxide (Indium Tin Oxide, ITO) conduct The transparency conducting layer 17, while there is the characteristic of transmission carrier and light transmission.(E-gun evaporator) is deposited using electron gun Mode is grown up the indium tin oxide films of 225nm, enables the transparency conducting layer 17, position is on the electric current confinement structure 16, and covering should First presumptive area (A of photon crystal structure 15₁) on, and the setting of upper surface 171 one second of the transparency conducting layer 17 is predetermined Region (A₂), second presumptive area (A₂) position and the photon crystal structure 15 the first presumptive area (A₁) position be in Now corresponding relationship up and down, in the present embodiment, the material of the transparency conducting layer 17 includes being selected from tin indium oxide (ITO), antimony tin (ATO), fluorine-doped tin oxide (FTO), aluminum zinc oxide (AZO), gallium oxide zinc (GZO), indium zinc oxide (IZO), zinc oxide (ZnO) Any to be constituted, but not limited thereto.

Shown in Fig. 1 I, after having plated the transparency conducting layer 17, a groove (Trench) (T) is defined using yellow light process The tin indium oxide in the groove (T) is removed as the boundary isolation (Isolation), and using tin indium oxide etching solution, but not It is defined in this.

Shown in Fig. 1 J, one positive electrode metal 18 is deposited, and after having defined electrode pattern using yellow light process, and deposits titanium (Ti), golden (Au) two kinds of metals, then removed excess metal with lifting off, the positive electrode metal 18 is enabled, position is in the transparency conducting layer On 17, and there is a metal aperture 181, and the second presumptive area (A of the corresponding transparency conducting layer 17 of the metal aperture 181₂), make this Metal aperture 181 does not cover the first presumptive area (A of the photon crystal structure 15₁), but not limited thereto.

Shown in Fig. 1 K, by the 11 thickness wear down of substrate, the second surface 112 of the substrate 11 is made to form class mirror surface (Mirror-like) surface, but not limited thereto.

Shown in Fig. 1 L, one back electrode metal 19 is deposited, and deposits nickel (Ni), germanium (Ge), golden (Au) three kinds of metals, and enabling should Back electrode metal 19, position is on the second surface 112 of the substrate 11.Finally, rapid thermal annealing (Rapid thermal Annealing, RTA), that is, it completes this and is electrically excited photonic crystal surface emitting laser element 10A, but not limited thereto.

In another preferred embodiment, shown in Fig. 3, one kind being electrically excited photonic crystal surface emitting laser element 10B, includes: should It include being equipped with a buffer layer (Buffer layer) (B) between substrate 11 and the lower coating layer 12, in the present embodiment, the buffer layer (B) material include selected from gallium nitride (GaN), GaAs (GaAs), indium phosphide (InP) is any is constituted；The buffer area (B) with a thickness of 200nm, but not limited thereto.

It include being equipped with one first graded bedding (Graded-index, GRIN) between the buffer layer (B) and the lower coating layer 12 (G₁), in the present embodiment, the composition formula of the aluminum gallium arsenide of the lower coating layer 12 is Al_0.4Ga_0.6As, the ratio of aluminium is by 0.4 gradual change To 0.1, the purpose is to mitigate the precipitous energy barrier in GaAs and aluminum gallium arsenide interface；The lower coating layer 12 with a thickness of 1.3 μm； First graded bedding (G₁) material include selected from aluminum gallium arsenide (AlGaAs), GaAs (GaAs), aluminium gallium nitride alloy (AlGaN), Aluminium arsenide gallium indium (AlGaInAs), AlGaInP (AlGaInP) is any is constituted；First graded bedding (G₁) thickness For 150nm, but not limited thereto.

It include being equipped with one first point to open the limitation heterogeneous (Separate of layer between the lower coating layer 12 and the active layers 13 Confinement Heterostructure, SCH) (S₁)；The active layers 13 and include being equipped with one the between coating layer 14 on this Two separately limit to heterogeneous (Separate Confinement Heterostructure, the SCH) (S of layer₂), it, should in the present embodiment First separately limits to layer heterojunction structure (S₁) opened with this second point and limit to the heterogeneous (S of layer₂) material include be selected from aluminum gallium arsenide (AlGaAs), GaAs (GaAs), aluminium gallium nitride alloy (AlGaN), aluminium arsenide gallium indium (AlGaInAs), AlGaInP (AlGaInP) any to be constituted, function can reach the limitation of carrier and light field respectively；This first point open limitation layer it is different Matter structure (S₁) with a thickness of 130nm；This second point is opened limitation layer heterojunction structure (S₂) with a thickness of 105nm, but be not limited to This.

It include being equipped with one second graded bedding (Graded-index, GRIN) between coating layer 14 and the contact layer (C) on this (G₂), and coating layer 14, second graded bedding (G on this₂) and the contact layer (C) in high bench-type and be equipped with several air holes 141, form the photon crystal structure 15, in the present embodiment, composition formula of aluminum gallium arsenide of coating layer 14 is on this Al_0.4Ga_0.6The ratio of As, aluminium are gradient to 0.1 by 0.4, and the purpose is to mitigate the precipitous energy in GaAs and aluminum gallium arsenide interface Barrier；Coating 14 with a thickness of 200nm on this；The contact layer (C) with a thickness of 100nm；Second graded bedding (G₂) material packet It includes selected from aluminum gallium arsenide (AlGaAs), GaAs (GaAs), aluminium gallium nitride alloy (AlGaN), aluminium arsenide gallium indium (AlGaInAs), phosphatization Gallium aluminium indium (AlGaInP) is any to be constituted；Second graded bedding (G₂) with a thickness of 150nm, but not limited thereto.

It holds, the substrate 11, the buffer layer (B), first graded bedding (G₁), the lower coating layer 12, this first point open office Limit layer heterojunction structure (S₁), the active layers 13, this second point open limitation layer heterojunction structure (S₂), coating layer 14 on this, this second gradually Change layer (G₂) and the contact layer (C) form the epitaxial structure (W), limit epitaxy growth the number of plies.In addition, the active layers 13 The structure of top is P-type semiconductor, and dopant (dopant) is beryllium atom (Be), and wherein the contact layer (C) of the top is attached most importance to It adulterates (Heavily doped), it is therefore an objective to good nurse contact difficult to understand is formed with tin indium oxide, and the structure below active layers is N-type semiconductor, dopant are silicon atom (Si), and the concentration of two kinds of dopants is 10¹⁸cm^-3, the region of heavy doping is 10¹⁹cm^-3。 The above-mentioned disclosed substrate 11, the buffer layer (B), first graded bedding (G₁), the lower coating layer 12, this first point open limitation layer (S₁), this second point open limitation layer (S₂), coating layer 14, second graded bedding (G on this₂) and the contact layer (C) material model It encloses, wave-length coverage is also enable to include blue light to infrared light.

Shown in Fig. 4 A, which includes an at least quantum dot layer 131A, in the present embodiment, the quantum dot layer The material of 131A include selected from indium arsenide (InAs), gallium nitride (GaN), InGaAsP (InGaAs), InGaN (InGaN), InGaP (InGaP), aluminium arsenide gallium indium (AlGaInAs), AlGaInP (AlGaInP), gallium arsenide-phosphide indium (GaInAsP) Any to be constituted, but not limited thereto.In addition, the quantum structure 131 has 7 layers of quantum dot layer 131A, the quantum dot Layer 131A further includes a quantum dot 1311, a coating 1312 and a wall 1313, covers the covering on the quantum dot 1311 Layer 1312, the coating 1312 be equipped with the wall 1313, and the material of the quantum dot 1311 be indium arsenide and its with a thickness of 2.2ML (Mono layer), cooperates that the material of the coating 1312 is InGaAsP, its composition formula is In_0.15Ga_0.85As and its With a thickness of the material of 5nm and the wall 1313 for GaAs and its with a thickness of 45nm, but not limited thereto.

Shown in Fig. 4 B, which includes an at least quantum well layers 131B, in the present embodiment, the quantum well layers The material of 131B include selected from indium arsenide (InAs), gallium nitride (GaN), InGaAsP (InGaAs), InGaN (InGaN), InGaP (InGaP), aluminium arsenide gallium indium (AlGaInAs), AlGaInP (A1GaInP), gallium arsenide-phosphide indium (GaInAsP) Any to be constituted, but not limited thereto.

It holds, using the quantum structure 131 as gain media, that successfully produces ambient operation is electrically excited photon crystalline substance Physical efficiency belt edge type laser, cooperate the photon crystal structure 15 period (a) be 385nm, 388nm, 390nm, 393nm or 395nm makes laser emission wavelength near 1.3 μm, the laser wavelength can become larger with the period of the photon crystal structure 15 and It is elongated, it is not limited to which that the period (a) of the photon crystal structure 15 is 385nm, 388nm, 390nm, 393nm or 395nm, therefore thunder Penetrate emission wavelength and be not limited to 1.3 μm, and without wafer fusion or the complex technology grown up again of epitaxy on processing procedure, selection directly from The epitaxial structure the top (W) makes the photon crystal structure 15 toward etched inside, and above the photon crystal structure 15 Tin indium oxide is covered as the transparency conducting layer 17, luminous energy is made to go out light, and photonic crystal energy band from the front of the epitaxial structure (W) There is peripheral type laser face to project the excellent characteristics such as light, far-field divergence angle be small, therefore the coupling efficiency of optical fiber is better than edge-emitting laser (Edge-emitting 1aser), the laser for operating in this wave band have very high application potential in optical-fibre communications field, but unlimited Due to this.

Based on above-mentioned composition, the aspect of above-mentioned preferred embodiment, difference is only that the material of epitaxy growth is different, and It all can reach mutual by the positive electrode metal 18, the transparency conducting layer 17, the electric current confinement structure 16 and the back electrode metal 19 Cooperation, and then is electrically excited the quantum structure 131, then by the photon crystal structure 15 can face project laser in the photonic crystal knot First presumptive area (A of structure 15₁), the aperture 161 of the electric current confinement structure 16, the transparency conducting layer 17 the second presumptive area (A₂) to outside the metal aperture 181 of the positive electrode metal 18, and cooperate shown in Fig. 5, the length of outer side (L of the metal aperture 181₁) be 650 μm and inside length (L₂) it is 300 μm, and the second presumptive area of the transparency conducting layer 17 is presented in the metal aperture 181 (A₂) and Fig. 6 shown in, the electric current confinement structure 16 and the transparency conducting layer are sequentially made on the photon crystal structure 15 17, with shown in Fig. 2A, Fig. 2 B, the electric current confinement structure 16 and the transparency conducting layer are not yet made on the photon crystal structure 15 After 17 comparison, it is electrically excited photonic crystal surface it can be learnt that the electric current confinement structure 16 and the transparency conducting layer 17 are made in this and penetrates The where of type laser element 10A, 10B.

The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, it is all It is any simple modification, equivalent change and modification to the above embodiments according to the technical essence of the invention, still falls within In the range of technical solution of the present invention.