阅读说明：本技术 一种平板耦合脊波导半导体激光器 (Flat coupling ridge waveguide semiconductor laser ) 是由 贺钰雯 周坤 杜维川 李弋 何林安 高松信 唐淳 于 2021-07-15 设计创作，主要内容包括：本发明公开了一种平板耦合脊波导半导体激光器,属于半导体激光器件的技术领域,包括外延层,所述外延层的顶部设有一宽脊波导和分别位于该宽脊波导两侧的一窄脊波导,并通过各个所述窄脊波导限制宽脊波导的横向电场模式,且窄脊波导的宽度小于宽脊波导的宽度；其中,对所述宽脊波导施加正向偏置电压,对各所述窄脊波导施加反向偏置电压,以达到能提高单个激光器的输出功率,并能保持较好光束质量的目的。(The invention discloses a slab coupling ridge waveguide semiconductor laser, which belongs to the technical field of semiconductor laser devices and comprises an epitaxial layer, wherein the top of the epitaxial layer is provided with a wide ridge waveguide and narrow ridge waveguides respectively positioned at two sides of the wide ridge waveguide, the transverse electric field mode of the wide ridge waveguide is limited by each narrow ridge waveguide, and the width of the narrow ridge waveguide is smaller than that of the wide ridge waveguide; forward bias voltage is applied to the wide ridge waveguide, and reverse bias voltage is applied to each narrow ridge waveguide, so that the output power of a single laser can be improved, and the aim of keeping better light beam quality can be fulfilled.)

1. A slab-coupled ridge waveguide semiconductor laser comprises an epitaxial layer and is characterized in that a wide ridge waveguide and narrow ridge waveguides respectively positioned on two sides of the wide ridge waveguide are arranged at the top of the epitaxial layer, the transverse electric field mode of the wide ridge waveguide is limited by the narrow ridge waveguides, and the width of the narrow ridge waveguide is smaller than that of the wide ridge waveguide;

wherein a forward bias voltage is applied to the wide ridge waveguide and a reverse bias voltage is applied to each of the narrow ridge waveguides.

2. The slab-coupled ridge waveguide semiconductor laser as claimed in claim 1 wherein a first ridge waveguide electrode is provided on the wide ridge waveguide through which a forward bias voltage is applied to the wide ridge waveguide.

3. The slab-coupled ridge waveguide semiconductor laser as claimed in claim 2 wherein the first ridge waveguide electrode is connected by probing or bonding to apply a forward bias voltage.

4. The slab-coupled ridge waveguide semiconductor laser as claimed in claim 1 wherein a second ridge waveguide electrode is provided on each of the narrow ridge waveguides, and a reverse bias voltage is applied to each of the narrow ridge waveguides through the second ridge waveguide electrode.

5. The slab-coupled ridge waveguide semiconductor laser as claimed in claim 4 wherein the second ridge waveguide electrode is connected by probing or bonding to apply a reverse bias voltage.

6. A slab-coupled ridge waveguide semiconductor laser as claimed in claim 1 wherein each of the narrow ridge waveguides is symmetrically disposed on either side of the wide ridge waveguide.

7. The slab-coupled ridge waveguide semiconductor laser as claimed in claim 1 wherein the width of the wide ridge waveguide ranges between 5um and 100 um.

8. The slab-coupled ridge waveguide semiconductor laser as claimed in claim 1 wherein the width of the narrow ridge waveguide ranges between 3um and 100 um.

9. The slab-coupled ridge waveguide semiconductor laser as claimed in claim 1 or 6 wherein the spacing between each of the wide and narrow ridge waveguides is between 3um and 50 um.

10. The slab-coupled ridge waveguide semiconductor laser as claimed in claim 1 wherein the height of the wide ridge waveguide and each of the narrow ridge waveguides relative to the slab waveguide ranges between 0.5um and 2 um.

Technical Field

The invention belongs to the technical field of semiconductor laser devices, and particularly relates to a flat plate coupling ridge waveguide semiconductor laser.

Background

The planar waveguide semiconductor laser has the advantages of simple structure, high power, low cost and the like, and is widely applied to the aspects of laser medical treatment, free space optical communication, pumping sources, phased array radars, advanced material processing and the like. The slab waveguide semiconductor laser near 976nm wavelength is mainly used for pumping of ytterbium doped fiber laser, and can obtain higher light-light conversion efficiency.

Although the output power of the conventional flat waveguide semiconductor laser is high, the conventional flat waveguide semiconductor laser has multimode lasing and poor beam quality of output laser, so that the application of the flat waveguide semiconductor laser is limited, and the main method for improving the beam quality is to add a transverse structure in the flat waveguide semiconductor laser to limit a transverse electric field of photons.

A narrow ridge waveguide laser structure is formed by etching a narrow ridge waveguide from a covering layer downwards on a flat waveguide, wherein the ridge width is usually 2-4 mu m, and the narrow ridge waveguide laser structure is used for inhibiting a transverse high-order electric field mode in the waveguide and realizing single-mode output. Because the narrow ridge waveguide has small cross-sectional area and a supported mode field area is narrow, the cavity surface power density is high, the heat dissipation is poor, optical cavity surface Catastrophe (COMD) is easy to occur, and the total output power of a single laser is greatly reduced.

At present, a 976nm semiconductor laser needs to solve the problem of how to increase the total output power while maintaining good beam quality.

Disclosure of Invention

In view of the above, in order to solve the above problems in the prior art, the present invention provides a slab-coupled ridge waveguide semiconductor laser to achieve the purposes of increasing the output power of a single laser and maintaining good beam quality.

The technical scheme adopted by the invention is as follows: a slab coupling ridge waveguide semiconductor laser comprises an epitaxial layer, wherein a wide ridge waveguide and narrow ridge waveguides respectively positioned on two sides of the wide ridge waveguide are arranged at the top of the epitaxial layer, the transverse electric field mode of the wide ridge waveguide is limited by the narrow ridge waveguides, and the width of the narrow ridge waveguide is smaller than that of the wide ridge waveguide;

wherein a forward bias voltage is applied to the wide ridge waveguide and a reverse bias voltage is applied to each of the narrow ridge waveguides.

Furthermore, a first ridge waveguide electrode is arranged on the wide ridge waveguide, and forward bias voltage is applied to the wide ridge waveguide through the first ridge waveguide electrode.

Further, the first ridge waveguide electrode is connected by a probe or bonding manner to apply a forward bias voltage.

Furthermore, each narrow ridge waveguide is provided with a second ridge waveguide electrode, and a reverse bias voltage is applied to each narrow ridge waveguide through the second ridge waveguide electrode.

Further, the second ridge waveguide electrode is connected by a probe or bonding manner to apply a reverse bias voltage.

Furthermore, the narrow ridge waveguides are symmetrically arranged on two sides of the wide ridge waveguide, photons of a high-order transverse electric field generated in the region where the wide ridge waveguide is located can shift to the region where the narrow ridge waveguides on the two sides are located, and the symmetrical arrangement of the narrow ridge waveguides on the two sides can be beneficial to synchronous absorption of the photons.

Furthermore, the width value range of the wide ridge waveguide is 5 um-100 um, the power density can be reduced through the wide ridge waveguide section, and the laser beam output power of a single laser is improved.

Furthermore, the width value range of the narrow ridge waveguide is between 3um and 100um, and the width values of the two narrow ridge waveguides can be the same or different and are set according to actual conditions.

Further, the distance between the wide ridge waveguide and the narrow ridge waveguide is 3um to 50um, and the distance between the two narrow ridge waveguides and the wide ridge waveguide can be the same or different.

Further, the height value range of the wide ridge waveguide and each narrow ridge waveguide compared with the slab waveguide is between 0.5um and 2um, and in practical application, the height values of the wide ridge waveguide and each narrow ridge waveguide are set according to practical situations, and may be the same height or different heights.

The invention has the beneficial effects that:

1. by adopting the slab coupling ridge waveguide semiconductor laser provided by the invention, the slab waveguide is provided with the wide ridge waveguide, the narrow ridge waveguides are respectively arranged at the two sides of the wide ridge waveguide, and photons with high-order electric field modes at the edge of the wide ridge waveguide applied with forward bias voltage are absorbed by widening depletion layers of regions where the narrow ridge waveguides applied with reverse bias voltage are located, so that the high-order transverse electric field modes of output laser are reduced, the semiconductor laser outputs better light beam quality, the power density can be reduced by the wider ridge waveguide section of the wide ridge waveguide, and the laser output power of a single semiconductor laser is improved.

Drawings

FIG. 1 is a schematic diagram of the overall structure of a slab-coupled ridge waveguide semiconductor laser according to the present invention;

the drawings are labeled as follows:

101-common electrode, 102-epitaxial layer, 103-first ridge waveguide, 104-second ridge waveguide, 105-third ridge waveguide, 106-first ridge waveguide electrode, 107-second ridge waveguide electrode, 108-third ridge waveguide electrode.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.

It should be noted that:

in the description of the embodiments of the present invention, it should be further noted that the terms "disposed" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases by those skilled in the art; the drawings in the embodiments are used for clearly and completely describing the technical scheme in the embodiments of the invention, and obviously, the described embodiments are a part of the embodiments of the invention, but not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Example 1

As shown in fig. 1, the present embodiment specifically provides a slab-coupled ridge waveguide semiconductor laser, and aims to further improve the total laser output power by optimizing and improving the semiconductor laser on the premise of maintaining good beam quality. In this embodiment, a 976nm semiconductor laser is adopted, and the 976nm semiconductor laser mainly comprises: the common electrode 101 and the epitaxial layer 102 are sequentially stacked.

Three ridge waveguides are arranged on the top of the epitaxial layer 102, namely a first ridge waveguide 103, a second ridge waveguide 104 and a third ridge waveguide 105, wherein the first ridge waveguide 103 is a wide ridge waveguide, the second ridge waveguide 104 and the third ridge waveguide 105 are narrow ridge waveguides, and the width of the narrow ridge waveguides is smaller than that of the wide ridge waveguide. In the present embodiment, the second ridge waveguide 104 and the third ridge waveguide 105 are located on both sides of the first ridge waveguide 103 and symmetrically distributed so as to restrict the transverse electric field mode of the first ridge waveguide 103 by the second ridge waveguide 104 and the third ridge waveguide 105.

A first ridge waveguide electrode 106 is arranged on the first ridge waveguide 103, and the first ridge waveguide electrode 106 is connected in a probe or bonding mode to apply a forward bias voltage to the first ridge waveguide 103; a second ridge waveguide electrode 107 is arranged on the second ridge waveguide 104, and the second ridge waveguide electrode 107 is connected in a probe or bonding mode to apply a reverse bias voltage to the second ridge waveguide 104; a third ridge waveguide electrode 108 is provided on the third ridge waveguide 105, and the third ridge waveguide electrode 108 is connected by a probe or a bonding method to apply a reverse bias voltage to the third ridge waveguide 105. The widths of the first ridge waveguide electrode 106, the second ridge waveguide electrode 107 and the third ridge waveguide electrode 108 may be set according to the corresponding ridge waveguide widths, that is, the width of the first ridge waveguide electrode 106 is wider, and the widths of the second ridge waveguide electrode 107 and the third ridge waveguide electrode 108 are narrower, but the design is not limited thereto, and the width of the first ridge waveguide electrode 106 may be set to be the same as the widths of the second ridge waveguide electrode 107 and the third ridge waveguide electrode 108, as long as the application of the bias voltage is not affected.

In actual operation, by applying a forward voltage to the first ridge waveguide electrode 106 and applying a reverse voltage to the second ridge waveguide electrode 107 and the third ridge waveguide electrode 108, laser light is generated from the region where the first ridge waveguide 103 is located and laser light is output. The method specifically comprises the following steps: forward bias voltage is applied to the first ridge waveguide electrode 106, reverse bias voltage is applied to the second ridge waveguide electrode 107 and the third ridge waveguide electrode 108 through the three probes, the common electrode 101 is grounded, photons in a high-order electric field mode generated in the first ridge waveguide 103 region are absorbed by the second ridge waveguide 104 and the third ridge waveguide 105 region, and the transverse electric field mode of laser beams output by the semiconductor laser is reduced.

The advantages of the above design are: the high-order transverse electric field of the photon generated from the region where the first ridge waveguide 103 of the 976nm semiconductor laser is located will be shifted to the regions where the second ridge waveguide 104 and the third ridge waveguide 105 on both sides are located, so that the photon is absorbed, and the laser output by the semiconductor laser is in a fundamental mode or a first-order mode, and has better beam quality. Meanwhile, the cross section of the first ridge waveguide 103 is wide, the supported mode field area is large, the cavity surface power density is reduced, and the total laser output power of a single 976nm semiconductor laser is improved.

The values for the specific application are: the total width of epitaxial layer 102 is 800um and the cavity length is 4 mm. The light emitting region of the semiconductor laser is the region where the first ridge waveguide 103 is located, the width is 5um, the photon absorption region is the region where the second ridge waveguide 104 and the third ridge waveguide 105 are located, and the widths of the two are both 3 um; the distance between the second ridge waveguide 104 and the third ridge waveguide 105 and the edge of the first ridge waveguide 103 is 4um, and the height of the first ridge waveguide 103, the height of the second ridge waveguide 104 and the height of the third ridge waveguide 105 are all 1 um. In practical application, the widths and heights of the first ridge waveguide 103, the second ridge waveguide 104 and the third ridge waveguide 105 and the distances among the three ridge waveguides can be adjusted according to practical requirements.

Example 2

The embodiment specifically provides a slab-coupled ridge waveguide semiconductor laser, which aims to further improve the total laser output power by optimizing and improving the semiconductor laser on the premise of keeping better beam quality, and on the basis of embodiment 1, the design of the semiconductor laser is as follows:

three ridge waveguides are arranged on the top of the epitaxial layer 102, namely a first ridge waveguide 103, a second ridge waveguide 104 and a third ridge waveguide 105, wherein the first ridge waveguide 103 is a wide ridge waveguide and the second ridge waveguide 104 and the third ridge waveguide 105 are narrow ridge waveguides, and the width of the narrow ridge waveguides is smaller than that of the wide ridge waveguide. In the present embodiment, the second ridge waveguide 104 and the third ridge waveguide 105 are located on both sides of the first ridge waveguide 103 and are asymmetrically distributed, and similarly, the lateral electric field mode of the first ridge waveguide 103 can be limited by the second ridge waveguide 104 and the third ridge waveguide 105.

In actual operation, by applying a forward voltage to the first ridge waveguide electrode 106 and applying a reverse voltage to the second ridge waveguide electrode 107 and the third ridge waveguide electrode 108, laser light is generated from the region where the first ridge waveguide 103 is located and laser light is output. The method specifically comprises the following steps: forward bias voltage is applied to the first ridge waveguide electrode 106, reverse bias voltage is applied to the second ridge waveguide electrode 107 and the third ridge waveguide electrode 108, and the common electrode 101 is grounded, so that high-order electric field mode photons generated in the first ridge waveguide 103 region are absorbed by the second ridge waveguide 104 and the third ridge waveguide 105 region, and the transverse electric field mode of the laser beam output by the semiconductor laser is reduced.

The values for the specific application are: the total width of epitaxial layer 102 is 800um and the cavity length is 4 mm. The light emitting region of the semiconductor laser is the region where the first ridge waveguide 103 is located, the width is 10um, the photon absorption region is the region where the second ridge waveguide 104 and the third ridge waveguide 105 are located, the width of the second ridge waveguide 104 is 5um, and the width of the third ridge waveguide 105 is 7 um; the distance between the second ridge waveguide 104 and the edge of the first ridge waveguide 103 is 4um and the distance between the third ridge waveguide 105 and the edge of the first ridge waveguide 103 is 6 um; the heights of the first ridge waveguide 103, the second ridge waveguide 104 and the third ridge waveguide 105 are all 1 um. In practical application, the widths and heights of the first ridge waveguide 103, the second ridge waveguide 104 and the third ridge waveguide 105 and the distances among the three ridge waveguides can be adjusted according to practical requirements.

The invention is not limited to the above alternative embodiments, and any other various forms of products can be obtained by anyone in the light of the present invention, but any changes in shape or structure thereof, which fall within the scope of the present invention as defined in the claims, fall within the scope of the present invention.