阅读说明：本技术 一种激光器模组及其制备方法、识别组件 (Laser module, preparation method thereof and identification assembly ) 是由 土克旭 金利剑 刘风雷 于 2021-09-01 设计创作，主要内容包括：本申请提供一种激光器模组及其制备方法、识别组件,涉及激光器技术领域,包括衬底,在衬底的相对两侧分别设有发光层和微结构,衬底的材料为透光材料,发光层的出光侧靠近衬底,发光层远离衬底的一侧还连接有电极结构,发光层出射的光束依次经衬底和微结构出射。电极结构导通使发光层发光,以形成倒装背出射的激光器模组,发光层出射的光束依次经衬底和微结构出射。衬底的相对两侧分别设有发光层和微结构,光源出射的光束经发光层的出光侧射向衬底,再透过衬底射向微结构,最后从微结构出射。电极结构设在发光层的同一侧,利用倒装背出射,使光束背出射,使激光器模组整体的体积大幅缩小,实现结构的微型化,降低成本。(The application provides a laser module and a preparation method and an identification assembly thereof, relates to the technical field of lasers, and comprises a substrate, wherein a light emitting layer and a microstructure are respectively arranged on two opposite sides of the substrate, the substrate is made of a light-transmitting material, the light emitting side of the light emitting layer is close to the substrate, an electrode structure is further connected to one side, far away from the substrate, of the light emitting layer, and light beams emitted by the light emitting layer are sequentially emitted through the substrate and the microstructure. The electrode structure is conducted to enable the light-emitting layer to emit light so as to form a laser module which is inverted and back-emitted, and light beams emitted by the light-emitting layer are emitted through the substrate and the microstructure in sequence. The light source is arranged on the substrate, and the light source emits light beams to the substrate through the light emitting side of the light emitting layer, then the light beams transmit the substrate to the microstructure, and finally the light beams are emitted from the microstructure. The electrode structure is arranged at the same side of the luminous layer, and the light beam is back-emitted by utilizing the inverted back-emission, so that the overall volume of the laser module is greatly reduced, the miniaturization of the structure is realized, and the cost is reduced.)

1. A laser module, comprising: the light emitting device comprises a substrate, wherein a light emitting layer and a microstructure are respectively arranged on two opposite sides of the substrate, the substrate is made of a light transmitting material, the light emitting side of the light emitting layer is close to the substrate, an electrode structure is further connected to one side, far away from the substrate, of the light emitting layer, and light beams emitted by the light emitting layer sequentially pass through the substrate and the microstructure to be emitted.

2. The laser module as recited in claim 1 wherein said electrode structure comprises a positive electrode and a negative electrode disposed on a side of said light-emitting layer remote from said substrate, said positive electrode and said negative electrode being in communication through said light-emitting layer.

3. The laser module of claim 2, wherein the electrode structure further comprises a circuit board disposed on a side of the positive electrode and the negative electrode away from the light-emitting layer.

4. The laser module of claim 1, wherein the microstructure comprises any one of a diffractive optical element, a free-form surface diffusing structure, a micro-lens array, a super-lens structure, or a super-surface structure.

5. The laser module as claimed in claim 1, wherein a surface of the substrate on which the light-emitting layer is disposed is a flat surface or a curved surface.

6. The laser module of claim 1, wherein the substrate is sapphire or gallium arsenide.

7. An identification assembly, comprising the laser module set according to any one of claims 1 to 6, a receiving end module set and a controller, wherein the laser module set emits a light beam to project an object, the receiving end module set receives the light beam reflected by the object and feeds the light beam back to the controller, and the controller identifies the object according to a preset algorithm.

8. A preparation method of a laser module is characterized by comprising the following steps:

forming a microstructure on a substrate; wherein the substrate is made of a light-transmitting material;

forming a light emitting layer on one side of the substrate, which is far away from the microstructure, wherein the light emitting side of the light emitting layer faces the substrate;

and forming an electrode structure on one side of the light-emitting layer far away from the substrate.

9. The method of claim 8, wherein the forming the microstructure on the substrate comprises:

and forming the microstructure on the substrate in a stamping or etching mode.

10. The method of claim 8, wherein the forming an electrode structure on a side of the light-emitting layer away from the substrate comprises:

arranging a positive electrode and a negative electrode on the side of the light-emitting layer far away from the substrate to conduct electricity between the positive electrode and the negative electrode through the light-emitting layer;

and arranging circuit boards on the sides of the positive electrode and the negative electrode far away from the light-emitting layer, so that the circuit boards are electrically connected with the positive electrode and the negative electrode respectively.

Technical Field

The application relates to the technical field of lasers, in particular to a laser module and a preparation method and an identification assembly thereof.

Background

The infrared laser light source TOF (time of flight) module or the structured light module for ranging or face recognition is composed of a laser transmitter VCSEL, a Diffraction Optical Element (DOE) manufactured on glass or a free-form surface microlens array and a plastic bracket. The existing module has long manufacturing period and high cost, so that the application range is limited.

Disclosure of Invention

An object of the embodiments of the present application is to provide a laser module, a method for manufacturing the same, and an identification component, which can form a thin structure and reduce cost.

One aspect of the embodiment of the application provides a laser module, including the substrate the relative both sides of substrate are equipped with luminescent layer and microstructure respectively, the material of substrate is the printing opacity material, the light-emitting side of luminescent layer is close to the substrate, the luminescent layer is kept away from one side of substrate still is connected with electrode structure, the light beam of luminescent layer outgoing passes through in proper order the substrate with the microstructure outgoing.

Optionally, the electrode structure includes a positive electrode and a negative electrode disposed on a side of the light-emitting layer away from the substrate, and the positive electrode and the negative electrode are communicated through the light-emitting layer.

Optionally, the electrode structure further comprises a circuit board disposed on a side of the positive electrode and the negative electrode away from the light emitting layer.

Optionally, the microstructure includes any one of a diffractive optical element, a free-form surface diffusion structure, a microlens array, a superlens structure, or a super-surface structure.

Optionally, one surface of the substrate, on which the light emitting layer is disposed, is a plane or a curved surface.

Optionally, the material of the substrate is sapphire or gallium arsenide.

In another aspect of the embodiments of the present application, an identification component is provided, including: according to the laser module, the receiving end module and the controller, the light beam emitted by the laser module projects a target object, the receiving end module receives the light beam reflected by the target object and feeds the light beam back to the controller, and the controller identifies the target object according to a preset algorithm.

In another aspect of the embodiments of the present application, a method for manufacturing a laser module is provided, including: forming a microstructure on a substrate; wherein the substrate is made of a light-transmitting material; forming a light emitting layer on one side of the substrate, which is far away from the microstructure, wherein the light emitting side of the light emitting layer faces the substrate; and forming an electrode structure on one side of the light-emitting layer far away from the substrate.

Optionally, the forming a microstructure on a substrate includes: and forming the microstructure on the substrate in a stamping or etching mode.

Optionally, the forming of the electrode structure on the side of the light emitting layer away from the substrate includes: arranging a positive electrode and a negative electrode on the side of the light-emitting layer far away from the substrate to conduct electricity between the positive electrode and the negative electrode through the light-emitting layer; and arranging circuit boards on the sides of the positive electrode and the negative electrode far away from the light-emitting layer, so that the circuit boards are electrically connected with the positive electrode and the negative electrode respectively.

The laser module that this application embodiment provided and preparation method, discernment subassembly thereof, laser module include the substrate, are equipped with luminescent layer and microstructure respectively in the relative both sides of substrate, and the material of substrate is the printing opacity material, and the light-emitting side of luminescent layer is close to the substrate, and one side that the substrate was kept away from to the luminescent layer still is connected with electrode structure, and electrode structure switches on and makes the luminescent layer luminous to form the laser module of flip-chip back of body outgoing, the light beam of luminescent layer outgoing is in proper order through substrate and microstructure outgoing. The light source is arranged on the substrate, and the light source emits light beams to the substrate through the light emitting side of the light emitting layer, then the light beams transmit the substrate to the microstructure, and finally the light beams are emitted from the microstructure. The substrate is made of a light-transmitting material, light beams can be ensured to transmit through the substrate due to light transmission, the integration level of the light-emitting layer and the microstructure is better, and the overall performance is better; the light beam penetrates through the substrate from the light emitting layer and then is emitted through the microstructure, wherein the electrode structure is arranged on the same side of the light emitting layer, and the light beam is emitted from the back by utilizing the inverted back emission, so that the overall volume of the laser module is greatly reduced, the miniaturization of the structure is realized, and the cost is reduced.

Furthermore, the identification assembly comprises the laser module, a receiving end module and a controller, a light beam emitted by the laser module projects a target object, the receiving end module receives the light beam reflected by the target object and feeds the light beam back to the controller, and the controller identifies the target object according to a preset algorithm. The light-emitting layer and the microstructure are integrated on the two surfaces of the substrate, so that the laser module is miniaturized and integrated. The laser module is applied to the identification assembly, light beams emitted by the laser module are projected to a target object and received by the receiving end, calculation is carried out through the controller, the target object is identified, the overall size of the identification assembly structure is greatly reduced, and cost is reduced.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.

FIG. 1 is a schematic diagram of a conventional vcsel laser module;

fig. 2 is a schematic structural diagram of a laser module provided in this embodiment;

fig. 3 is a flowchart of a method for manufacturing a laser module according to the present embodiment.

Icon: 11-a PCB board; 12-a base; 13-a vcsel back electrode; 14-cscel; 15-a vcsel face electrode; a 16-vcsel component; 17-a scaffold; 18-a light-emitting layer; 19-a base electrode; 20-a bonding wire; 101-a substrate; 102-a microstructure; 103-a light emitting layer; 104-an electrode layer; 105-a circuit board; 106-laser assembly.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.

In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.

It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

The TOF (time of flight) module or the structured light module for ranging or face recognition comprises a laser transmitter VCSEL and a Diffraction Optical Element (DOE) manufactured on glass or a free-form surface micro-lens array and a plastic support.

Taking a vcsel laser module as an example, as shown in fig. 1, a conventional vcsel laser module PCB 11 is sequentially provided with a base 12 and a plastic support 17, a vcsel back electrode 13, a vcsel 14 and a vcsel surface electrode 15 are further arranged in the plastic support 17 and on the base 12 to form a vcsel component 16, a base electrode 19 is further arranged on one side of the vcsel back electrode 13, the base electrode 19 and the vcsel surface electrode 15 are distributed on two sides of the vcsel 14 and need to be bonded by a wire bonding method through a bonding wire 20, a light emitting layer 18 is DOE or a diffuser and needs to be processed on glass for reassembly, and the manufacturing process is long.

In order to solve the above problem, an embodiment of the present application provides a laser module, which utilizes a laser component 106 with an inverted back-emission structure, wherein a light emitting layer 103 and a microstructure 102 are respectively disposed on two sides of a substrate 101, the microstructure 102 is directly integrated on the substrate 101, and the microstructure 102 is prepared by an optical design and a micro-nano manufacturing technology to form a diffractive optical microstructure or an MLA free-form surface microstructure on one side of the substrate 101. And a flip-chip (VCSEL) manufacturing technology is utilized to manufacture the light-emitting device on the other side, so that a module assembly link is omitted, the cost is saved, the size of the structure is greatly reduced through an integrated design, and the cost is reduced.

Specifically, referring to fig. 2, the laser module provided in the embodiment of the present application includes a substrate 101, a light emitting layer 103 and a microstructure 102 are respectively disposed on two opposite sides of the substrate 101, the substrate 101 is made of a light-transmitting material, a light emitting side of the light emitting layer 103 is close to the substrate 101, one side of the light emitting layer 103 away from the substrate 101 is further connected with an electrode structure, the electrode structure is conducted to enable the light emitting layer 103 to emit light, so as to form a laser module emitting from a back of an inverted surface, and light beams emitted from the light emitting layer 103 sequentially exit through the substrate 101 and the microstructure 102.

The light emitting layer 103 and the microstructure 102 are respectively located on two opposite side surfaces of the substrate 101, and light beams emitted from the light source are emitted to the substrate 101 through the light emitting side of the light emitting layer 103, are emitted to the microstructure 102 through the substrate 101, and are emitted from the microstructure 102.

The light-emitting layer 103 is formed by growing a compound such as GaAs on the substrate 101, and realizing light emission by electrode design and energization; the microstructure 102 imprints and etches a nanostructure on the substrate 101, and the light emitting layer 103 and the microstructure 102 are respectively arranged on two sides of the substrate 101, so that the integrated laser module is realized.

The inverted back emitting structure is specifically referred to in the granted patent CN201810630962.3, and an Omni-Directional Reflector (ODR) formed by corresponding transparent material layers and metal layers replaces a DBR layer below a quantum well of a conventional VCSEL chip, and the ODR has a very high reflectivity for light with various wavelengths, and its own ohmic impedance is also very small, and the epitaxial growth time of the inverted VCSEL chip is short and the inverted VCSEL chip is low in voltage.

The substrate 101 is made of a light-transmitting material, the light-transmitting material ensures that light beams can pass through the substrate 101 from the light-emitting layer 103, meanwhile, the substrate 101 can also be made of a single crystal material, such as sapphire, the arrangement of particles in the whole crystal of the single crystal material in space is long-range ordered, and the whole crystal lattice of the single crystal is continuous, so that the single crystal material has high-quality characteristics, and mainly has the characteristics of lower lattice defects, higher mechanical strength, lower fragment rate, higher conversion efficiency and higher concentration. Therefore, the substrate 101 is made of a single crystal material, so that the integration level of the light emitting layer 103 and the microstructure 102 can be better, and the overall performance is better.

For example, when the substrate 101 is a sapphire material, sapphire as the substrate 101 has the following advantages that the production technology of the sapphire substrate 101 is mature, and the device quality is good; the sapphire has good stability and can be applied to the high-temperature growth process; the sapphire has high mechanical strength and is easy to process and clean; the sapphire material is produced in batch, so that the product is mature at present and has great advantage in cost.

The substrate 101 may also be a gallium arsenide material, which is an inorganic compound, gallium arsenide is also an important semiconductor material, and gallium arsenide may be made into a semi-insulating high-resistance material with a resistivity more than three orders of magnitude higher than that of silicon and germanium, and used to make integrated circuit substrates, infrared detectors, gamma photon detectors, and the like. The semiconductor device made of gallium arsenide has the advantages of good high-frequency, high-temperature and low-temperature performances, low noise, strong radiation resistance and the like. Gallium arsenide is a material having many advantages in semiconductor materials, but a transistor manufactured by using the gallium arsenide has small amplification factor and poor thermal conductivity, and is not suitable for manufacturing high-power devices. Another advantage of gallium arsenide: it is a direct bandgap material and can therefore be used to emit light. Therefore, gallium arsenide is used as the substrate 101 in the present application, and the light beam emitted from the light emitting layer 103 passes through the substrate 101 and then exits through the microstructure 102.

In the laser module provided by the embodiment of the application, the light emitting layer 103 and the microstructure 102 are respectively arranged on two opposite sides of the substrate 101, and light beams emitted by the light source are emitted to the substrate 101 through the light emitting side of the light emitting layer 103, then emitted to the microstructure 102 through the substrate 101, and finally emitted from the microstructure 102. The substrate 101 is made of a light-transmitting material, and light beams can be ensured to transmit through the substrate 101 due to light transmission, so that the integration level of the light-emitting layer 103 and the microstructure 102 is better, and the overall performance is better; the light beam penetrates through the substrate 101 from the light emitting layer 103 and then is emitted through the microstructure 102, one side, far away from the substrate, of the light emitting layer 103 is further connected with an electrode structure, the electrode structure is conducted to enable the light emitting layer 103 to emit light, the light emitting layer 103, the substrate 101 and the microstructure 102 form a laser assembly 106, and the light beam is emitted in a back-emitting mode by utilizing the laser module which is inverted and emitted in a back-emitting mode; the light emitting layer 103 and the microstructure 102 are integrally arranged on the two sides of the substrate 101, so that the microstructure is directly arranged on the substrate, the manufacturing process is shortened, the overall volume of the laser module is greatly reduced, the miniaturization of the structure is realized, and the cost is reduced.

Further, the light emitting layer 103 is designed and powered to emit light, an electrode structure is connected to a side of the light emitting layer 103 away from the substrate, the electrode structure includes a positive electrode, a negative electrode and a circuit board 105, the positive electrode and the negative electrode are located on the same side of the light emitting layer 103 to form an electrode layer 104, the positive electrode and the negative electrode are both arranged on the circuit board 105, the circuit board 105 supplies power to the positive electrode and the negative electrode, and the light emitting layer 103 emits light through the circuit board 105, the positive electrode and the negative electrode to emit light beams to the substrate.

The light beam emitted by the light emitting layer 103 is emitted by the microstructure after being emitted to the substrate, wherein the microstructure can be manufactured by adopting a nano imprinting/photoetching technology and an etching technology, and the microstructure is a nano microstructure which is fine and fine in structure so as to adapt to different light spot changes.

Illustratively, microstructures include any of diffractive optical elements, free-form surface diffusing structures, microlens arrays, superlens structures, or super-surface structures, which, by different arrangements of microstructures 102, enable optical field modulation.

In addition, the surface of the substrate 101 on which the light emitting layer 103 is disposed is a plane or a curved surface, that is, the surface of the substrate 101 in contact with the light emitting layer 103 may be a plane or a curved surface, and the curved surface functions to increase the contact surface of the light emitting layer 103, thereby improving the light efficiency.

In summary, in the laser module provided in the embodiment of the present application, the sapphire material is used as the substrate 101, the light emitting layer 103 and the microstructure 102 are respectively disposed on two sides of the substrate 101, a positive electrode and a negative electrode are connected to one side of the light emitting layer 103 away from the substrate, the circuit board 105 is disposed on one side of the positive electrode and the negative electrode away from the light emitting layer 103, the light emitting layer 103 emits light through the circuit board 105, the positive electrode and the negative electrode to emit light beams, the light beams are emitted to the substrate 101 through the light emitting side of the light emitting layer 103, and are emitted to the microstructure 102 through the substrate 101 and then are emitted from the microstructure 102. The light-emitting layer 103 emits light by means of the circuit board 105, the positive electrode and the negative electrode, and the microstructures 102 have different arrangements for optical field modulation. Utilize the flip to carry out the luminescent layer 103 of outgoing structure, directly sit the substrate one side of the luminescent layer 103 of outgoing structure back of the flip with the microstructure, light goes out back of the body, wire bonding plastic support and device base plate have been saved, the device can be done littleer when saving the cost, and, adopt the laser module of outgoing structure back of the flip, positive electrode and negative electrode all distribute in the same one side of luminescent layer 103, do not need to carry out the bonding encapsulation, shorten the preparation flow, make the overall structure of laser module little, realize the miniaturation, the setting that integrates, reduce overall structure's cost. When the laser module is applied to the infrared light emitter, the overall structure volume and the cost of the infrared light emitter can be reduced.

In a feasible embodiment of the present application, the laser module provided in the embodiment of the present application may be applied to face recognition, the circuit board 105 and the electrode layer 104 are connected, the light emitting layer 103 emits light and emits light beams toward the substrate 101, the microstructure 102 is disposed on the substrate 101, the light beams are emitted by the microstructure 102 to perform light field modulation, the modulated light beams are projected on a face, the light beams reflected by the face are received by the infrared camera to be collected, the infrared camera collects different image phase information on the face, and the different image phase information is converted into depth information through operation, so as to obtain a three-dimensional image of the face, and complete face recognition. Of course, the laser module provided in the embodiment of the present application can also be applied to other similar fields such as ranging, and the principle thereof is similar to face recognition, which is not illustrated here.

On the other hand, referring to fig. 3, an embodiment of the present application further provides a method for manufacturing a laser module, including:

s100: microstructures 102 are formed on substrate 101.

Illustratively, in one embodiment of the present application, a structure 102 having a microstructure is formed using a sapphire material as a substrate 101, using a nanoimprint/lithography technique and an etching technique, and the structure thus formed is superior to glass and various resin materials in terms of product environmental resistance.

The substrate 101 is made of a light-transmitting material to ensure that light beams emitted from the light-emitting side of the light-emitting layer 103 can be transmitted to the microstructure 102 through the substrate 101, so as to ensure that the light-emitting layer 103 and the microstructure 102 have better integration level and better overall performance.

S110: a light emitting layer 103 is formed on the substrate 101 on a side facing away from the microstructures 102, the light emitting layer 103 having its light exit side facing the substrate 101.

A light-emitting layer 103 is formed on the side of the substrate 101 away from the microstructure 102, the light-emitting layer 103 emits light through the circuit board 105, the positive electrode and the negative electrode, and light beams are emitted through the substrate and then through the microstructure 102. S120: an electrode structure is formed on the side of the light-emitting layer 103 remote from the substrate 101.

The light-emitting layer 103 is caused to light-emit light by an electrode structure, specifically, the electrode structure includes a positive electrode and a negative electrode provided on a side of the light-emitting layer 103 away from the substrate, and a circuit board 105 that supplies power to the positive electrode and the negative electrode.

The positive and negative electrodes are isolated from each other, and are conducted inside the light-emitting layer 103 and supplied with power through the circuit board 105 to cause the light-emitting layer 103 to emit light.

The embodiment of the application also discloses an identification assembly, including laser instrument module, receiving terminal module and the controller of above-mentioned embodiment, the light beam of laser instrument module outgoing throws the object, and the receiving terminal module receives the light beam of object reflection and feeds back to the controller, and the controller discerns the object according to predetermineeing the algorithm.

By integrating the light-emitting layer 103 and the microstructures 102 on both sides of the substrate 101, the laser module is miniaturized and integrated. The laser module is applied to the infrared illuminator, so that the whole volume of the infrared illuminator structure is greatly reduced, and the cost is reduced. The recognition component can be used for 3D recognition, for example, face recognition can be carried out, light beams emitted by the laser module are collected by the infrared camera (receiving end module), collected information is fed back to the controller, and the controller calculates the information according to a preset algorithm set in advance to complete a face recognition task.

Of course, the laser module that this application embodiment provided still can be applied to fields such as range finding, for example is applied to laser radar range finding, and its principle is similar with above-mentioned face identification, and it is no longer repeated here.

The identification component comprises the same structure and beneficial effects as the laser module in the previous embodiment. The structure and the advantageous effects of the laser module have been described in detail in the foregoing embodiments, and are not repeated herein.

The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.