阅读说明：本技术 使用量子阱混合技术的激光架构 (Laser architecture using quantum well intermixing techniques ) 是由 A·毕斯姆托 M·A·阿伯雷 R·M·奥代特 于 2018-09-25 设计创作，主要内容包括：本公开涉及使用量子阱混合技术的激光架构。本发明公开了一种包括多个条纹的激光器芯片,其中激光条纹可利用初始光学增益分布来生长,并且其光学增益分布可通过使用混合工艺来偏移。这样,可在同一个激光器芯片上从相同的外延晶片形成多个激光条纹,其中至少一个激光条纹可具有相对于另一个激光条纹偏移的光学增益分布。例如,每个激光条纹可相对于其相邻激光条纹具有偏移的光学增益分布,从而每个激光条纹可发射具有不同波长范围的光。激光器芯片可在宽泛的波长范围内发射光。本公开的示例还包括具有不同混合量的给定激光条纹的不同区域。(The present disclosure relates to laser architectures using quantum well intermixing techniques. A laser chip including a plurality of stripes is disclosed, wherein the laser stripes may be grown with an initial optical gain profile, and the optical gain profile may be shifted by using a hybrid process. In this way, multiple laser stripes may be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe may have an optical gain profile that is offset relative to another laser stripe. For example, each laser stripe may have an offset optical gain profile relative to its neighboring laser stripes such that each laser stripe may emit light having a different wavelength range. The laser chip can emit light over a wide range of wavelengths. Examples of the present disclosure also include different regions of a given laser stripe having different amounts of mixing.)

1. A laser chip, the laser chip comprising:

a plurality of laser stripes including at least one laser stripe,

the at least one laser stripe comprises:

one or more first sub-regions along the active region of the at least one laser stripe, the one or more first sub-regions comprising a first transition energy, an

One or more second sub-regions along the active region, the one or more second sub-regions comprising a second transition energy,

wherein the second transition energy is different from the first transition energy,

wherein the one or more first sub-regions comprise an epitaxial wafer and the one or more second sub-regions comprise the epitaxial wafer.

Technical Field

The present disclosure generally relates to semiconductor lasers formed using Quantum Well Intermixing (QWI). More particularly, the present disclosure relates to semiconductor laser chips comprising a plurality of QWI laser stripes having different optical gain shifts.

Background

Semiconductor lasers are useful in many applications such as trace gas detection, environmental monitoring, biomedical diagnostics, telecommunications, and industrial process control. Some applications may benefit from systems capable of emitting light over a wide range of wavelengths.

One way to achieve emission over a wide range of wavelengths may be to include multiple laser chips in the system, where some or all of the laser chips may be configured to emit light over different wavelength ranges. In some cases, the range of wavelengths may be wider than the intrinsic gain bandwidth of the laser stripe (e.g., quantum well epitaxial structure). Each laser chip may include a laser stripe and may be grown and engineered separately on an epitaxial wafer. Multiple laser chips can collectively create a system capable of emitting different wavelengths. Growing the laser chip on a separate epitaxial wafer may, in some cases, increase the size, cost, and complexity of the system. One way to reduce the complexity and number of epitaxial wafers included in the system may be to include a plurality of laser stripes on the laser chip, where some or all of the laser stripes may emit light at different wavelengths. One approach to include multiple laser stripes of different wavelengths over a wider range than the intrinsic bandwidth of the laser chip may be to utilize a hybrid process on the same epitaxial wafer.

Disclosure of Invention

A laser chip including a plurality of stripes is described herein. The laser stripes may be grown with an initial optical gain profile, and their optical gain profile may be shifted by using a hybrid process. In this way, multiple laser stripes may be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe may have an optical gain profile that is offset relative to another laser stripe. For example, each laser stripe may have an offset optical gain profile relative to its neighboring laser stripes such that each laser stripe may emit light having a different wavelength range. The laser chip can emit light over a wide range of wavelengths. Examples of the present disclosure also include different regions of a given laser stripe having different amounts of mixing. For example, the laser stripe may have hybrid facets, wherein the facets may be located adjacent to sub-regions along the active region having higher transition energies than the gain region (e.g., located between the facets). In some cases, hybrid facets may be used to minimize the possibility of altering the integrity at the laser facet. As another example, the laser stripe may have a hybrid lateral region positioned adjacent to the active region (e.g., along a ridge waveguide). The blended lateral region may be distinct from the active region and may have a different blending amount than the active region. In some cases, the hybrid lateral region may be used to minimize optical loss and/or for potential energy increase in carrier confinement.

Drawings

Fig. 1 shows an example band diagram of a Quantum Well (QW) and Quantum Well Intermixed (QWI) laser according to an example of the present disclosure.

Fig. 2A illustrates a top view of a plurality of laser stripes included in an exemplary laser chip according to an example of the present disclosure.

Fig. 2B illustrates an electron band structure corresponding to the plurality of laser stripes of fig. 2A, according to an example of the present disclosure.

Fig. 2C illustrates an exemplary gain profile corresponding to the plurality of laser stripes of fig. 2A, according to an example of the present disclosure.

Fig. 3A illustrates an exemplary fabrication process for forming a laser chip according to an example of the present disclosure.

Fig. 3B illustrates a cross-sectional view of an exemplary epitaxial wafer according to an example of the present disclosure.

Fig. 3C shows a cross-sectional view of an exemplary epitaxial wafer after etching a corresponding target number of layers, according to an example of the present disclosure.

Fig. 3D illustrates a cross-sectional view of an exemplary epitaxial wafer after mixing and after growth of one or more cladding layers according to an example of the present disclosure.

Fig. 4 illustrates a top view of a plurality of laser stripes included in an example laser chip with hybrid laser facets according to an example of the present disclosure.

Fig. 5A illustrates a top view of an exemplary laser chip including a reduced size top electrode according to an example of the present disclosure.

Fig. 5B illustrates a top view of an exemplary laser chip including at least two laser stripes with different electrode arrangements according to examples of the present disclosure.

Fig. 6A illustrates a cross-sectional view of an exemplary laser stripe and corresponding lateral region according to an example of the present disclosure.

Fig. 6B illustrates a top view of an exemplary laser chip with a hybrid lateral region according to an example of the present disclosure.

Fig. 7 illustrates a top view of an exemplary laser chip including a laser stripe configured to have both a hybrid facet and a hybrid lateral region according to an example of the present disclosure.

Fig. 8A illustrates a top view of an exemplary laser chip including laser stripes with different mixing regions, where the regions may be based on the shape of the gain profile according to examples of the present disclosure.

Fig. 8B illustrates a top view of an exemplary laser chip including a laser stripe having a plurality of regions with different degrees of mixing according to an example of the present disclosure.

Fig. 8C shows a laser stripe configured with a hybrid facet and a shaped interface.

Detailed Description

In the following description of the examples, reference is made to the accompanying drawings in which are shown, by way of illustration, specific examples that may be implemented. It is to be understood that other examples may be used and structural changes may be made without departing from the scope of the various examples.

Various technologies and process flow steps will now be described in detail with reference to examples as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of one or more aspects and/or features described or referred to herein. It will be apparent, however, to one skilled in the art, that one or more aspects and/or features described or referenced herein may be practiced without some or all of these specific details. In other instances, well known process steps and/or structures have not been described in detail so as not to obscure some of the aspects and/or features described or referenced herein.

Moreover, although process steps or method steps may be described in a sequential order, such processes and methods may be configured to work in any suitable order. In other words, any sequence or order of steps that may be described in this disclosure does not itself indicate a need to perform the steps in that order. Further, although described or implied as occurring non-concurrently (e.g., because one step is described after another), some steps may be performed concurrently. Moreover, the illustration of the processes in the figures by means of their description does not imply that the illustrated processes exclude other variants and modifications thereof, that any of the illustrated processes or steps thereof must be one or more of the examples, and that the illustrated processes are preferred.

Semiconductor lasers are useful in many applications such as trace gas detection, environmental monitoring, biomedical diagnostics, telecommunications, and industrial process control. Some applications may benefit from systems capable of emitting light over a wide range of wavelengths.

One way to achieve emission over a wide range of wavelengths may be to include multiple laser chips in the system, where some or all of the laser chips may be configured to emit light over different wavelength ranges. In some cases, the range of wavelengths may be wider than the intrinsic gain bandwidth of the laser stripe (e.g., quantum well epitaxial structure). Each laser chip may include laser stripes and may be grown and engineered separately on an epitaxial wafer. Multiple laser chips can collectively create a system capable of emitting different wavelengths. Growing the laser chip on a separate epitaxial wafer may, in some cases, increase the size, cost, and complexity of the system. One way to reduce the complexity and number of epitaxial wafers included in the system may be to include a plurality of laser stripes on the laser chip, where some or all of the laser stripes may emit light at different wavelengths. One approach to include multiple laser stripes of different wavelengths over a wider range than the intrinsic bandwidth of the laser chip may be to utilize a hybrid process on the same epitaxial wafer.

The present disclosure relates to a laser chip including a plurality of stripes. The laser stripe may be grown with one or more materials having initial optical properties (e.g., optical gain profile), and its optical properties may be altered (e.g., optical gain profile may be shifted) by using a hybrid process that changes the material properties. In this way, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where the laser stripes have a common material. The hybrid process may alter the material properties of at least one laser stripe such that its optical gain profile is shifted relative to the optical gain profile of another laser stripe on the same epitaxial wafer. A hybrid process can be used to form different regions along the active region of the laser stripe with different transition energies and electron band structures. For example, the laser stripe may have hybrid facets, where the facets may be located adjacent to sub-regions along the active region and may have higher transition energies than the gain region (e.g., located between the facets). In some cases, a hybrid facet may be used to minimize the amount of optical absorption at the facet. Minimizing the amount of optical absorption may reduce the likelihood of altering the integrity of the laser facets (e.g., damaging or impairing the ability of the laser stripes to generate and emit light). As another example, the laser stripe may have a hybrid lateral region located adjacent to the active region. The blended lateral region may be distinct from the active region and may have a different blending amount than the active region. In some examples, the active region of the laser stripe may include different regions with different mixing amounts. In some cases, a hybrid lateral region may be used to minimize optical loss and/or potential increase for carrier confinement.

Representative applications of the methods and apparatus according to the present disclosure are described in this section. These examples are provided merely to add context and aid in understanding the examples. It will thus be apparent to one skilled in the art that the examples may be practiced without some or all of the specific details. Other applications are possible, such that the following examples should not be considered limiting.

Semiconductor lasers may have many uses in portable or small electronic devices. Some applications may benefit from systems capable of emitting light over a wide range of wavelengths of interest. One approach to achieving emission over a wide range of wavelengths while reducing system complexity may be to include multiple laser stripes on the laser chip, where one or more of the laser stripes may be configured to emit light of different wavelengths. Although each laser stripe may be grown and engineered separately on different epitaxial wafers, some applications may benefit from a less complex system with a reduced number of epitaxial wafers.

One type of suitable semiconductor laser may be a Quantum Well (QW) laser. QW lasers may include a narrow bandgap material sandwiched between layers comprising materials with larger bandgap energies. The difference in band gap energies may create quantum wells that confine electrons and holes. Fig. 1 shows an example band diagram of a QW and Quantum Well Intermixed (QWI) laser according to an example of the present disclosure. The QW laser may have an electronic band structure 114 including a transition energy 116. Engineering the confinement potential of a quantum well can change the emission wavelength of a given laser, since the emission wavelength can correspond to its transition energy.

One way to reduce the complexity and number of epitaxial wafers included in the system may be to create multiple laser stripes from the same epitaxial wafer using a hybrid process. The mixing process may be a bandgap engineering technique in which disorder may be introduced into the lattice structure to change the shape of the electronic band structure of the laser to the electronic band structure 124, as shown in fig. 1. The process may cause different atoms in the quantum well structure to intermix. Exemplary processes may include, but are not limited to, ion implantation of uncharged species and defect diffusion from semiconductor dielectric interfaces.

As shown, the mixing process can simultaneously cause a change in the shape of the electron band structure and a change in the transition energy of the laser from transition energy 116 to transition energy 126. A larger transition energy 126 may cause the laser to emit shorter wavelengths of light. In this way, the laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using a hybrid process.

This relationship between mixing and optical gain profile shift can be used to produce multiple laser stripes on the same epitaxial wafer with different emission wavelengths. Fig. 2A shows a top view of a plurality of laser stripes included in an exemplary laser chip, and fig. 2B shows a corresponding electronic band structure according to an example of the present disclosure. The laser chip 201 may include a plurality of laser stripes 202. In some examples, at least one laser stripe (e.g., laser stripe 202A) may not be exposed to the mixing process. Thus, laser stripe 202A may have the same energy band structure 224 as the epitaxial wafer being grown (e.g., epitaxial wafer 300 shown in fig. 3). The laser stripe 202A can emit light 228A (e.g., corresponding to the optical gain profile 208A shown in fig. 2C and discussed below) using the transition energy 206A. In other cases, all of the laser stripes may be exposed to a hybrid process. Thus, the laser stripes (e.g., including laser stripe 202A) may have a different energy band structure than the epitaxial wafer being grown.

Laser stripe 202B may be an adjacent (e.g., neighboring) laser stripe relative to laser stripe 202A (and/or laser stripe 202C) and may be exposed to the mixing process. Laser stripe 202B may have a band structure 224B that may be different from band structure 224A due to the hybrid process, as shown in fig. 2B. Laser stripe 202B can emit light 228B with transition energy 206B (e.g., corresponding to optical gain profile 208B shown in fig. 2C and discussed below), laser stripe 202C can emit light 228C with transition energy 206C (e.g., corresponding to optical gain profile 208C shown in fig. 2C), and laser stripe 202D can emit light 228D with transition energy 206D (e.g., corresponding to optical gain profile 208D shown in fig. 2C).

One or more laser stripes (e.g., laser stripe 202C and laser stripe 202D) can have their electronic band structure changed and their transition energies and emission wavelengths shifted relative to one or more other (e.g., adjacent) laser stripes. In some cases, the direction of the shift may differ between adjacent laser stripes (e.g., a shift to a shorter wavelength relative to one adjacent laser stripe and a shift to a longer wavelength relative to another adjacent laser stripe). For example, laser stripe 202C may have two adjacent laser stripes: laser stripe 202B and laser stripe 202D. The laser stripe 202C may include an optical gain profile 208C that may have a maximum gain at a lower energy than the maximum gain of the optical gain profile 208D (shown in fig. 2C) of another laser stripe 202D. The optical gain profile 208C may also be shifted to a higher energy relative to the optical gain profile 208B of its other adjacent laser stripe 202B.

In some examples, as the position of the laser stripe on the epitaxial wafer increases relative to the edge of the epitaxial wafer, the offset may also increase. That is, the distance between the laser stripes may correspond to the amount by which the optical gain profile is shifted. For example, laser stripe 202D may be located farther from laser stripe 202A than laser stripe 202C. The offset of the optical gain profile 208D from the optical gain profile 208A may be greater than the offset of the optical gain profile 208C from the same optical gain profile 208A. In other examples, the shift in optical gain profile of different laser stripes may have a different (e.g., different from a gradient of increasing) pattern, such as each other laser stripe may have a shifted optical gain profile.

One or more laser stripes 202 on the same epitaxial wafer may comprise the same type of material. For example, each laser stripe 202 may comprise alternating layers of InGaAs and InP. The laser stripe may include one or more wavelength band methods including, but not limited to, DFB lasers, DBR lasers, tunable lasers, and fabry-perot lasers. In this way, a single epitaxial wafer (discussed below) may be grown for the laser chip 201. One or more (e.g., each) laser stripe 202 may be configured to have a different transition energy than one or more other laser stripes 202 located on the same laser chip 201 by using a hybrid process. For example, laser stripe 202A can be configured to have a transition energy 206A, and laser stripe 202B can be configured to have a transition energy 206B. Both laser stripes can be grown from the same epitaxial wafer, but the transition energy 206A and the transition energy 206B can be different.

Although the figures illustrate a laser chip including four laser stripes having four different transition energies, examples of the present disclosure may include any number of laser stripes and any number of transition energies. In addition, examples of the present disclosure are not limited to adjacent laser stripes having different optical gain profiles, but may also include one or more laser stripes that may have the same optical gain profile as their adjacent laser stripes.

In some examples, the concentration of transition energies on the same epitaxial wafer may produce a continuous range of wavelengths. Fig. 2C shows an exemplary optical gain profile corresponding to a plurality of laser stripes on the same epitaxial wafer, according to an example of the present disclosure. In some examples, each laser stripe 202 may have a different transition energy than other laser stripes 202 on the same epitaxial wafer 200, resulting in a laser chip capable of emitting in multiple wavelength ranges with a reduced number of epitaxial wafers and reduced complexity.

In some examples, two or more (e.g., adjacent) laser stripes may include portions of overlapping (e.g., same wavelength or wavelengths) gain profiles. For example, laser stripe 202A and laser stripe 202B may be adjacent laser stripes (e.g., laser stripes positioned adjacent to each other on the laser epitaxy). The laser stripe 202A may include an optical gain profile 208A and the laser stripe 202B may include an optical gain profile 208B, wherein the optical gain profile 208A and the optical gain profile 208B may include adjacent or overlapping wavelength ranges. If extending across multiple laser stripes, the system may be configured to emit light over a wide range of wavelengths, where the optical gain of at least two laser stripes may allow the system to emit light at any given wavelength over a range of wavelengths.

In some examples, shifting the optical gain profile of another (e.g., adjacent) laser stripe may include shifting each laser stripe to a shorter wavelength (i.e., a larger transition energy) using a hybrid process. For example, a laser emitting at 680nm may have a transition energy of 1.8 eV. The emission wavelengths of adjacent laser stripes can be shifted to shorter wavelengths (e.g., 610nm) and larger transition energies (e.g., 2.0eV) by using a hybrid process.

Fig. 3A illustrates an exemplary fabrication process for forming a laser chip according to an example of the present disclosure. Fig. 3B-3D show cross-sectional views of an exemplary laser chip at different steps in a manufacturing process according to examples of the present disclosure. Process 350 begins with growing a plurality of QW laser layers to form an epitaxial wafer (step 352 of process 350). An epitaxial wafer (e.g., epitaxial wafer 300) may be engineered to meet the optical characteristics of one or more laser stripes (e.g., laser stripe 202A shown in fig. 2B). For example, the epitaxial wafer may be engineered to match the characteristics of the laser stripe, which may not be subsequently exposed to the mixing process (discussed below). Growth may include growing one or more QW layers 324 and one or more layers 328, as shown in cross-sectional view in fig. 3B. The one or more layers 328 may include any layers included in a laser structure.

One or more photolithography steps may be used to define different regions on the epitaxial wafer (step 354 of process 350). The etching process may include multiple etching steps. Each etch step may remove a targeted amount of layer 328 from one or more regions 332 (step 356 of process 350). For example, the etching process may remove five layers 328 from region 332D (shown in fig. 3C). The number of layers 328 may be different for different regions 332. As another example, the etch process may remove one layer 328 from a region 332B that is different from the region 332D (shown in fig. 3C). In some examples, the etching process may include alternating between different selective etching steps, wherein one or more selective etches may have a higher preferential etch for one or more layers 328 than other layers 328. The number of layers 328 within a given region 332 may be used, at least in part, to control the particular portion of the epitaxial wafer that is subjected to the mixing process. For example, layer 328 may reduce the amount of mixing (e.g., dopant diffusion). In some cases, one or more laser stripes may be unexposed laser stripes, which may not be subject to the mixing process, but may be masked when other laser stripes are mixed (e.g., layer 328 may block dopant diffusion).

To remove a different number of layers 328 in one region (e.g., region 332B) relative to another region (e.g., region 332D), one or more photolithography steps may be included between etching steps. For example, a photolithographic layer (e.g., photoresist) (not shown) may be deposited over regions 332A-332C, exposing regions 332D, thereby allowing an etching process to remove layer 328 from regions 332D, as shown in fig. 3C. After the etching process, the photoresist layer may be removed. Another photolithographic layer may be deposited on one or more different areas (e.g., area 332A-area 332B). The layer 328 may be removed from at least one unexposed region (e.g., region 332C). The etching process may also remove layer 328 from at least another unexposed region (e.g., region 332D).

The etching process may continue until a portion or all of region 332 includes a corresponding target number of layers 328, as shown in fig. 3C. The target amount may be based on the amount of mixing. That is, the different regions 332 may comprise different total thicknesses of the layers 328. For example, a greater number of layers 328 may be etched from region 332D relative to region 332B. In some cases, a smaller number of layers 328 in region 332D may allow for a greater amount of mixing in region 332D. A greater amount of mixing may increase the degree of disorder introduced into the epitaxial wafer at region 332D, and the transition energy of region 332D may be offset by a greater amount than one or more other regions (e.g., region 332A-region 332C).

One or more nominally undoped layers may be deposited over at least the etched regions (step 358 of process 350). The one or more doped layers may comprise one or more impurities. The epitaxial wafer 300 may be exposed to a thermal process (e.g., rapid thermal anneal) such that impurities from the one or more doped layers may form disorder in the lattice structure of the QW layer 324 (step 360 of process 350). The one or more doped layers and layer 328 may be removed (step 362 of process 350). One or more cladding layers 338 may be grown over the etched regions (step 364 of process 350), as shown in fig. 3D. A plurality of electrodes (not shown) may be deposited (step 366 of process 350).

The QWI process described above may be used to change the amount of optical absorption in certain additional regions of the laser. One exemplary region of a laser that may benefit from optical absorption variation may be a laser facet. For example, when the laser power density is high, the laser facet may absorb too much energy. The large amount of absorption may cause heating at the laser facet, which may affect the integrity of the laser facet. In some cases, the potential for COD may increase due to dangling bonds and point defects created by forming (e.g., cutting and/or etching) laser facets. To reduce optical absorption, so that the probability of COD is reduced, the laser facets can be configured with larger transition energies using a hybrid process. The facets may become more transparent to light, thereby reducing the heat caused by absorption and increasing the lifetime of the laser.

Fig. 4 illustrates a top view of a plurality of laser stripes included in an example laser chip with hybrid laser facets according to an example of the present disclosure. Laser chip 401 may include a plurality of laser stripes 402, which may include one or more characteristics and/or functions similar to plurality of laser stripes 202 described above. One or more laser stripes 402 may have waveguides comprising different sub-regions 403 and 405. For example, laser stripe 402A may include sub-region 403A and sub-region 405A. As used throughout this disclosure, a "sub-region" is a region along the active region of the laser (e.g., along the growth plane). Sub-region 403A may have an energy band structure (e.g., energy band structure 224A shown in fig. 2B) and sub-region 405A may have another energy band structure (e.g., energy band structure 224B shown in fig. 2B). In some examples, the sub-regions 405 may be located at the facets of the respective laser stripes 402, and the sub-regions 403 (e.g., gain regions) of the laser stripes may be located between the sub-regions 405. That is, a sub-region of a given laser that is closer to the laser facet may have a larger transition energy than a sub-region of the given laser that is located in a region coinciding with the maximum gain of the laser.

In some examples, a sub-region (e.g., sub-region 405A) of a laser stripe (e.g., laser stripe 402A) may be configured to have the same energy band structure as another sub-region (e.g., sub-region 403B) of another laser stripe (such as an adjacent laser stripe, e.g., laser stripe 402B). Examples of the present disclosure may include all laser stripes with hybrid facets except one laser stripe (e.g., laser stripe 402D). Laser stripes without hybrid facets (e.g., laser stripe 402D) may have, for example, the shortest emission wavelength relative to other laser stripes 402.

The process for mixing sub-regions corresponding to laser facets may include patterning a photolithographic layer (not shown) and performing an etching process such that during the mixing process, the number of layers 228 in a sub-region (e.g., sub-region 405A) is the same as the number of layers in a sub-region (e.g., sub-region 403B) of another laser stripe (e.g., laser stripe 402B). A sub-region of one laser stripe may experience the same degree of mixing as another sub-region of another laser stripe. The other laser stripe may be any laser stripe on the same epitaxial chip, including but not limited to adjacent laser stripes.

Additionally or alternatively, examples of the present disclosure may include a top electrode having a smaller size than the ridge waveguide to minimize the potential for COD. Fig. 5A illustrates a top view of an exemplary laser chip including a reduced size top electrode according to an example of the present disclosure. Laser chip 501 may include a plurality of laser stripes 502, which may include one or more characteristics and/or functions similar to plurality of laser stripes 202 and/or laser stripes 402 described above. The laser stripe 502A may include a subregion 507A and a subregion 509A. Sub-region 509A may be located at or near the laser facet and sub-region 507A may be located at the gain region (e.g., the region coinciding with the maximum gain of the laser). The top electrode 544 (i.e., the electrode positioned closer to the ridge waveguide) of one or more laser stripes 502 may be configured such that its length L1 (i.e., in the longitudinal direction) is less than the length L2 of laser stripe 502. In some examples, the length L1 of the top electrode 544 may be the same as the length of the sub-region 507A. In this way, fewer charge carriers may be injected at locations adjacent to one or more laser facets (e.g., sub-region 509A), which may reduce the amount of optical absorption at the laser facets. Because the gain profile along the laser stripe (e.g., including the active region) has a maximum gain away from the laser facet (e.g., at the center of the laser), the pump facet region may not improve the performance of the laser stripe due to its optical transparency. Likewise, reducing the amount of pumping at the facet region can reduce the probability of COD without causing significant or any impairment of laser performance. Although the figures show all four laser stripes as including reduced-size top electrodes, examples of the present disclosure may also include reduced-size top electrodes on less than all of the laser stripes 502. For example, one laser stripe may include a reduced size top electrode, while another laser stripe may not.

Additionally or alternatively, examples of the present disclosure may include laser stripes having different lengths for the reduced size top electrode. Fig. 5B illustrates a top view of an exemplary laser chip including at least two laser stripes with different electrode arrangements according to examples of the present disclosure. In some cases, the electrode arrangement may be such that a lateral spacing from an edge of the electrode to the laser facet (e.g., related to a length of the top electrode) may be based on a transition energy of the laser stripe (e.g., and/or a transition energy of a gain region of the laser stripe). For example, laser stripe 502D may have a larger transition energy than laser stripe 502A. Due to the larger transition energy, the facets of the laser stripe 502D may be more susceptible to COD due to higher optical absorption. In some examples, the laser stripe with the larger transition energy (e.g., laser stripe 502D) may include a top electrode 554B having a longer length (e.g., length L2) than a top electrode 554A of the laser stripe with the smaller transition energy (e.g., a top electrode with laser stripe 502A having a shorter length L1). In some examples, all laser stripes except one laser stripe (e.g., laser stripe 502D) may have the same electrode arrangement. In some examples, the length of the top electrode may be varied gradually (e.g., may be based on the transition energy), as shown. Examples of the present disclosure also include one or more laser stripes configured to have both a hybrid facet (as discussed in the context of fig. 4) and a reduced pitch top electrode (as discussed in the context of fig. 5A).

In some cases, one or more regions of the laser may be associated with higher losses. Fig. 6A illustrates a cross-sectional view of an exemplary laser stripe and corresponding lateral region according to an example of the present disclosure. Laser stripe 602A may include a ridge waveguide 643A and a top electrode 644A electrically coupled to ridge waveguide 643A. Ridge waveguides 643A may be located between lateral regions 611A. In some examples, lateral region 611A may include QW layer 624 and may absorb light, which may result in an increase in loss and a decrease in laser quantum efficiency.

Examples of the present disclosure may include using a hybrid process for one or more regions (e.g., lateral regions 611) surrounding a ridge waveguide (e.g., ridge waveguide 643) and/or an active region. Fig. 6B illustrates a top view of an exemplary laser chip with a hybrid lateral region according to an example of the present disclosure. Laser chip 601 may include a plurality of laser stripes 602, which may include one or more characteristics and/or functions similar to plurality of laser stripes 202, laser stripes 402, and/or laser stripes 502 described above. One or more laser stripes (e.g., laser stripe 602A) may have a lateral region (e.g., lateral region 611A) positioned adjacent to its waveguide (e.g., ridge waveguide 643A) and/or active region. The ridge waveguide 643A can have a band structure (e.g., the band structure 224A shown in fig. 2B) and the one or more lateral regions 611A can have a different band structure (e.g., the band structure 224B shown in fig. 2B). In some examples, a lateral region (e.g., lateral region 611A) may be configured to have the same energy band structure as a ridge waveguide (e.g., ridge waveguide 643B) of another laser stripe (such as its neighboring laser stripe, e.g., laser stripe 602B). Examples of the present disclosure may include all laser stripes with mixed lateral regions except one laser stripe (e.g., laser stripe 602D). Laser stripes without a hybrid lateral region (e.g., laser stripe 602D) may have, for example, a shortest emission wavelength relative to other laser stripes 602. In some examples, the system may operate the laser stripe without the hybrid lateral region differently (e.g., higher injection current) to compensate for the difference in loss (e.g., higher) (relative to the laser stripe with the hybrid lateral region).

The process for intermixing the lateral regions may include patterning a photolithographic layer (not shown) and performing an etching process such that the number of layers (e.g., layer 328 shown in fig. 3B) in the lateral regions (e.g., lateral region 611A) is the same as the ridge waveguides (e.g., ridge waveguide 643A) of an adjacent laser stripe (e.g., laser stripe 602B). The lateral regions of one laser stripe may experience the same degree of mixing as the ridge waveguide of another laser stripe.

Examples of the present disclosure also include one or more laser stripes configured with a combination of one or more of the above examples: hybrid facets (as discussed in the context of fig. 4), reduced pitch top electrodes (as discussed in the context of fig. 5A-5B), and hybrid lateral regions (as discussed in the context of fig. 6A-6B). For example, fig. 7 shows a top view of an exemplary laser chip including a laser stripe configured to have both a hybrid facet and a hybrid lateral region according to an example of the present disclosure. Laser chip 701 may include a plurality of laser stripes 702, which may include one or more characteristics and/or functions similar to plurality of laser stripes 202, laser stripes 402, laser stripes 502, and/or laser stripes 602 described above. One or more laser stripes 702 may have a waveguide comprising different sub-regions 703 and 705. For example, laser stripe 702A may include sub-region 703A and sub-region 705A. Sub-region 703A can have an energy band structure (e.g., energy band structure 224A shown in fig. 2B), and sub-region 705A can have a different energy band structure (e.g., energy band structure 224B shown in fig. 2B). In some examples, the sub-regions 705 may be located at the facets of the respective laser stripes 702, wherein the sub-regions 703 (e.g., gain regions) of the laser stripes may be located between the sub-regions 705. In some examples, a sub-region (e.g., sub-region 705A) of a laser stripe (e.g., laser stripe 702A) may be configured to have the same energy band structure as a gain region (e.g., sub-region 703B) of an adjacent laser stripe (e.g., laser stripe 702B). In some cases, sub-region 703A may coincide with ridge waveguide 743A.

The ridge waveguide 743A may be located between the lateral regions 711A. The ridge waveguide 743A may have an energy band structure (e.g., the energy band structure 224A shown in fig. 2B), and the one or more lateral regions 711A may have a different energy band structure (e.g., the energy band structure 224B shown in fig. 2B). In some examples, a lateral region (e.g., lateral region 711A) may be configured to have the same energy band structure as a ridge waveguide (e.g., ridge waveguide 743A) of an adjacent laser stripe (e.g., laser stripe 702B). In some examples, two or more of the sub-region 705 (e.g., the hybrid facet region) of a given laser, the lateral region 711 of the same laser, and the sub-region 703 (e.g., the gain region) of a neighboring laser may have the same energy band structure.

Examples of the present disclosure may include all laser stripes with mixed lateral regions except one laser stripe (e.g., laser stripe 702D). Additionally or alternatively, the same (or different) laser stripe may not have a hybrid facet region. In some cases, the lateral region 711 may laterally surround the ridge waveguide 743 (and/or the active region), and the sub-region 705 may longitudinally surround the ridge waveguide 743 (and/or the active region). Additionally or alternatively, the laser chip may include one or more laser stripes configured as a top electrode having a reduced size, as described above. The process for blending the respective regions may include patterning the photolithographic layer based on the different regions for blending.

In some examples, the different regions for mixing may be configured based on the shape of the gain profile of the laser stripe. Fig. 8A-8C illustrate top views of exemplary laser chips including different regions for mixing based on the shape of the gain profile, according to examples of the present disclosure. For example, the laser chip 801A may include laser stripes 802A. The laser stripe 802A may include a plurality of sub-regions along its active region, such as sub-region 803 and sub-region 813, as shown in fig. 8A. The sub-regions 803 and 813 can be exposed to different degrees of intermixing during the fabrication process and can have different energy band structures. For example, sub-region 803 may not be exposed to mixing and may have an energy band structure similar to energy band structure 224A shown in fig. 2B. The sub-region 813 can be exposed to intermixing, can have a transition energy greater than that of the sub-region 803, and/or can have an energy band structure similar to the energy band structure 224B shown in fig. 2B. The "shaping" of the lateral mixing can help control the pattern of the laser stripes.

The location where the sub-region 803 and the sub-region 813 meet may result in a shape (e.g., non-rectangular) that reflects the optical gain profile of the laser stripe 802A (e.g., the optical gain profile 208A shown in fig. 2C). In some examples, the shape of the interface may complement the optical mode of the laser stripe 802A. Since the gain near the facet (i.e., the gain tail) may be small (e.g., almost zero), pumping the region near the facet may result in high optical absorption. The laser stripe 802A may be configured such that the sub-region 813 (e.g., a region located closer to an edge of the active region) has a different (e.g., higher) transition energy than the sub-region 803.

Examples of the present disclosure may include a laser stripe configured to have a plurality of sub-regions with different degrees of mixing, as shown in fig. 8B. The laser chip 801B may include laser stripes 802B. The laser stripe 802B may include sub-regions 803, 813, and 815 along its active region. The sub-region 815 may be exposed to a greater mixing volume than the sub-region 813, and the sub-region 813 may be exposed to a greater mixing volume than the sub-region 803. For example, sub-region 803 may have energy band structure 224A (shown in fig. 2B), sub-region 813 may have energy band structure 224B (shown in fig. 2B), and sub-region 815 may have energy band structure 224C (shown in fig. 2B). That is, for a given laser stripe, the transition energy may increase closer to the edge of its active region. The interface between the sub-region 803 and the sub-region 813 and/or the interface between the sub-region 813 and the sub-region 815 may have a shape based on the gain profile of the laser stripe 802B. In some examples, one or more sub-regions (e.g., sub-region 813 and/or sub-region 815) may not be a pumping region, while other sub-regions (e.g., sub-region 803) may be pumping regions.

Examples of the present disclosure also include one or more laser stripes configured with a combination of one or more of the above examples: mixing facets (as discussed in the context of fig. 4), reduced pitch top electrodes (as discussed in the context of fig. 5A-5B), mixing lateral regions (as discussed in the context of fig. 6A-6B), interfaces between sub-regions having shapes based on the gain profile (as discussed in the context of fig. 8A), and various degrees of mixing of the same laser stripe (as discussed in the context of fig. 8B). For example, fig. 8C shows a laser stripe configured with a hybrid facet (e.g., at sub-region 809) and a shaped interface (e.g., at sub-region 803 and sub-region 813).

In some examples, the shape of the top electrode may be based on the gain profile. In this way, pumping the laser stripes in regions with little gain (e.g., facets) may prevent or reduce loss in regions with gain (e.g., longitudinal centers). In some cases, the laser may be pumped non-uniformly throughout the active region.

The invention discloses a laser chip. The laser chip may include: a plurality of laser stripes including at least one laser stripe, the at least one laser stripe comprising: one or more first sub-regions along the active region of the at least one laser stripe, the one or more first sub-regions comprising a first transition energy, and one or more second sub-regions along the active region, the one or more second sub-regions comprising a second transition energy and a second doping amount, wherein the second transition energy is different from the first transition energy, wherein the one or more first sub-regions and the one or more second sub-regions comprise the same epitaxial wafer. Additionally or alternatively, in some examples, the laser chip further comprises: an unexposed laser stripe comprising a third transition energy, wherein the third transition energy is the same as the transition energy of the epitaxial wafer. Additionally or alternatively, in some examples, the one or more first sub-regions are located adjacent to the facets of the at least one laser stripe and the one or more second sub-regions are located adjacent to the gain region of the at least one laser stripe. Additionally or alternatively, in some examples, the plurality of laser stripes includes another laser stripe, wherein the second transition energy of the one or more second sub-regions of the another laser stripe is the same as the first transition energy of the one or more first sub-regions of the at least one laser stripe. Additionally or alternatively, in some examples, the first transition energy of the one or more first sub-regions is greater than the second transition energy of the one or more second sub-regions. Additionally or alternatively, in some examples, the laser chip further comprises: one or more electrodes disposed along the active region of the plurality of laser stripes, wherein for at least one laser stripe: the electrodes of the at least one laser stripe have a first length along the active region of the at least one laser stripe and a second length, wherein the first length is less than the second length. Additionally or alternatively, in some examples, the plurality of laser stripes includes another laser stripe, wherein an electrode of the another laser stripe has a third length along an active region of the another laser stripe, the third length being different from the first length and the second length. Additionally or alternatively, in some examples, the third length is longer than the first length, and wherein the second transition energy of the other laser is greater than the second transition energy of the at least one laser stripe. Additionally or alternatively, in some examples, the one or more first sub-regions of the at least one laser stripe include an active area of the at least one laser stripe, and wherein the one or more second sub-regions of the at least one laser stripe include a lateral region positioned adjacent to the active area of the at least one laser stripe. Additionally or alternatively, in some examples, the plurality of laser stripes includes another laser stripe, wherein the second transition energy of the one or more second sub-regions of the another laser stripe is the same as the first transition energy of the one or more first sub-regions of the at least one laser stripe. Additionally or alternatively, in some examples, the second transition energy of the one or more second sub-regions of the at least one laser stripe is greater than the first transition energy of the one or more first sub-regions of the at least one laser stripe. Additionally or alternatively, in some examples, the one or more first subregions and the one or more second subregions of the at least one laser stripe are both located on the active region of the at least one laser stripe. Additionally or alternatively, in some examples, the first transition energy of the one or more first sub-regions is greater than the second transition energy of the one or more second sub-regions, and wherein the one or more first sub-regions are located closer to an edge of the active region of the at least one laser stripe than the one or more second sub-regions. Additionally or alternatively, in some examples, the plurality of laser stripes includes another laser stripe, and wherein an optical gain profile of the another laser stripe is offset relative to an optical gain profile of the at least one laser stripe. Additionally or alternatively, in some examples, the one or more first sub-regions and the one or more second sub-regions include different amounts of mixing.

The invention discloses a method for manufacturing a laser chip. The method can comprise the following steps: forming a plurality of laser stripes, wherein forming the plurality of laser stripes comprises: growing the epitaxial wafer; mixing at least one laser stripe, wherein mixing comprises: mixing the one or more first sub-regions to a first amount along the active region of the at least one laser stripe; the one or more second sub-regions are mixed along the active region of the at least one laser stripe to a second amount, the second amount being different from the first amount. Additionally or alternatively, in some examples, growing the epitaxial wafer includes growing a plurality of layers, the method further comprising: removing one or more of the plurality of layers from one or more first sub-regions of the at least one laser stripe, wherein the one or more first sub-regions are located adjacent to a facet of the at least one laser stripe; and removing one or more of the plurality of layers from one or more second sub-regions of the at least one laser stripe, wherein the one or more second sub-regions are located adjacent to the gain region of the at least one laser stripe. Additionally or alternatively, in some examples, growing the epitaxial wafer includes growing a plurality of layers, the method further comprising: removing one or more of the plurality of layers from one or more first sub-regions of the at least one laser stripe, wherein the one or more first sub-regions comprise an active region of the at least one laser stripe; and removing one or more of the plurality of layers from one or more second sub-regions of the at least one laser stripe, wherein the one or more second sub-regions are lateral regions located adjacent to the active region of the at least one laser stripe. Additionally or alternatively, in some examples, growing the epitaxial wafer includes growing a plurality of layers, the method further comprising: removing one or more of the plurality of layers from one or more first sub-regions of the at least one laser stripe; and removing one or more of the plurality of layers from one or more second sub-regions of the at least one laser stripe, wherein the one or more first sub-regions are located closer to an edge of the active region of the at least one laser stripe than the one or more second sub-regions. Additionally or alternatively, in some examples, forming the plurality of laser stripes further comprises: mixing another laser stripe, wherein mixing comprises: one or more second sub-regions are mixed to a first amount along the active region of another laser stripe. Additionally or alternatively, in some examples, growing the epitaxial wafer includes growing a plurality of layers, the method further comprising: the unexposed laser stripes are masked with the grown plurality of layers while the at least one laser stripe is mixed.

Although the disclosed examples have been fully described with reference to the accompanying drawings, it is to be noted that various changes and modifications will become apparent to those skilled in the art. It is to be understood that such changes and modifications are to be considered as included within the scope of the disclosed examples as defined by the appended claims.