阅读说明：本技术 高散热垂直腔面发射激光器及其制作方法 (High-heat-dissipation vertical-cavity surface-emitting laser and manufacturing method thereof ) 是由 蔡文必 曾评伟 于 2021-09-02 设计创作，主要内容包括：本申请提供一种高散热垂直腔面发射激光器的制作方法,将砷化镓衬底正面的出光孔圈区域刻蚀至不超过衬底厚度,并于刻蚀位置沉积砷化铝层。在衬底正面外延生长N-DBR层、MQW层和P-DBR层,并在P-DBR层形成内部构成出光孔径的氧化层。该制作方法可以在外延生长前生长砷化铝层,在MQW层累积的热量向下传导时由于砷化铝的导热系数优于砷化镓,其散热传导至背面金属电极效率更高、散热更快,进而提升整个器件的散热性能,并且砷化铝和砷化镓晶格常数相匹配,对衬底进行刻蚀并沉积砷化铝层后进行外延生长的影响也较小。本申请还提供一种高散热垂直腔面发射激光器,通过形成于衬底的刻蚀凹槽内的砷化铝层可以提升器件的散热能力。(The application provides a manufacturing method of a high-heat-dissipation vertical-cavity surface-emitting laser, which is characterized in that a light-emitting aperture ring area on the front surface of a gallium arsenide substrate is etched until the thickness of the light-emitting aperture ring area does not exceed the thickness of the substrate, and an aluminum arsenide layer is deposited at the etching position. And epitaxially growing an N-DBR layer, an MQW layer and a P-DBR layer on the front surface of the substrate, and forming an oxide layer with an internal light-emitting aperture in the P-DBR layer. The manufacturing method can grow the aluminum arsenide layer before epitaxial growth, when the heat accumulated by the MQW layer is conducted downwards, the heat conduction coefficient of the aluminum arsenide is superior to that of gallium arsenide, the heat dissipation efficiency of the aluminum arsenide to the back metal electrode is higher, the heat dissipation is faster, the heat dissipation performance of the whole device is further improved, the lattice constants of the aluminum arsenide and the gallium arsenide are matched, and the influence of epitaxial growth after the substrate is etched and the aluminum arsenide layer is deposited is smaller. The application also provides a high-heat-dissipation vertical-cavity surface-emitting laser, which can improve the heat dissipation capacity of the device through the aluminum arsenide layer formed in the etching groove of the substrate.)

1. A method for manufacturing a high-heat-dissipation vertical-cavity surface-emitting laser is characterized by comprising the following steps:

before epitaxial growth, etching a light-emitting aperture ring area on the front surface of a substrate to a thickness not exceeding the thickness of the substrate, and depositing an aluminum arsenide layer at the etching position, wherein the substrate is composed of gallium arsenide;

epitaxially growing an N-DBR layer, an MQW layer and a P-DBR layer in sequence on one side of the substrate on which the aluminum arsenide layer is deposited;

performing an oxidation process on one side of the P-DBR layer close to the MQW layer to form an oxide layer with an internal light-emitting aperture;

forming a contact layer and a ring-shaped front electrode on the side of the P-DBR layer far away from the MQW layer;

and forming a back electrode on one side of the substrate far away from the N-DBR layer.

2. The method according to claim 1, wherein the step of etching the aperture ring region on the front side of the substrate to a thickness not exceeding the thickness of the substrate and depositing an aluminum arsenide layer at the etching position comprises:

coating a photoresist on the front side of the provided substrate;

adding a photomask and carrying out exposure treatment to define an etching area on the front surface of the substrate, wherein the etching area corresponds to the light-emitting aperture ring;

etching the substrate at the etching area until the thickness of the substrate is not more than the thickness of the substrate;

and depositing an annular aluminum arsenide layer at the etched position of the substrate.

3. The method according to claim 2, further comprising, after the step of depositing an annular aluminum arsenide layer on the etched portion of the substrate:

stripping the coated photoresist and the aluminum arsenide material on the photoresist;

and cleaning the laser.

4. The method according to claim 2, wherein an inner diameter of a ring formed by the aluminum arsenide layer is smaller than or equal to an optical exit aperture formed by the oxide layer.

5. The method of claim 1, wherein the depth of the aluminum arsenide layer is 3um to 200 um.

6. The method according to claim 1, wherein the thickness of the substrate is 500um-600 um.

7. A high heat dissipation vertical cavity surface emitting laser, comprising:

the light-emitting aperture ring area on the front surface of the substrate is provided with an etching groove, and the substrate consists of gallium arsenide;

an aluminum arsenide layer formed in the etched groove of the substrate;

sequentially epitaxially growing an N-DBR layer, an MQW layer and a P-DBR layer formed on one side of the substrate on which the aluminum arsenide layer grows;

an oxide layer which is formed inside the P-DBR layer and close to the MQW layer to form a light-emitting aperture;

a contact layer and a ring-shaped front electrode formed on the side of the P-DBR layer far away from the MQW layer;

and the back electrode is formed on one side of the substrate far away from the N-DBR layer.

8. The VCSEL of claim 7, wherein an inner diameter of a ring formed by the aluminum arsenide layer is smaller than or equal to an optical exit aperture formed by the oxide layer.

9. The VCSEL of claim 7, wherein the depth of the aluminum arsenide layer is 3um to 200 um.

10. The VCSEL of claim 7, wherein the substrate has a thickness of 500-600 um.

Technical Field

The invention relates to the technical field of lasers, in particular to a high-heat-dissipation vertical cavity surface emitting laser and a manufacturing method thereof.

Background

A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a Laser with a light-Emitting direction perpendicular to the Surface of a resonant Cavity, has the advantages of small threshold current, small divergence angle, circular symmetry of light spots, easy two-dimensional integration and the like, and is widely applied to the fields of optical interconnection, optical storage, optical communication and the like.

In order to reduce the threshold current of laser emission, the existing VCSEL generally adopts a current-limiting structure, i.e., an oxide layer forms a light-emitting hole to limit current to pass through the light-emitting hole only. Since the current is confined to a narrow region, its passing current density per unit time increases, causing the accumulation of device heat energy. The heat energy accumulation will affect the PN junction temperature of the device, thereby inverting the reliability of the device.

Disclosure of Invention

The invention aims to provide a high-heat-dissipation vertical cavity surface emitting laser and a manufacturing method thereof, which can improve the heat dissipation performance and the high-temperature characteristic of a device.

Embodiments of the invention may be implemented as follows:

in a first aspect, the present invention provides a method for manufacturing a vertical cavity surface emitting laser with high heat dissipation, the method comprising:

before epitaxial growth, etching a light-emitting aperture ring area on the front surface of a substrate to a thickness not exceeding the thickness of the substrate, and depositing an aluminum arsenide layer at the etching position, wherein the substrate is composed of gallium arsenide;

epitaxially growing an N-DBR layer, an MQW layer and a P-DBR layer in sequence on one side of the substrate on which the aluminum arsenide layer is deposited;

performing an oxidation process on one side of the P-DBR layer close to the MQW layer to form an oxide layer with an internal light-emitting aperture;

forming a contact layer and a ring-shaped front electrode on the side of the P-DBR layer far away from the MQW layer;

and forming a back electrode on one side of the substrate far away from the N-DBR layer.

In an optional embodiment, the step of etching the aperture ring region on the front surface of the substrate to a thickness not exceeding the thickness of the substrate and depositing an aluminum arsenide layer at the etching position includes:

coating a photoresist on the front side of the provided substrate;

adding a photomask and carrying out exposure treatment to define an etching area on the front surface of the substrate, wherein the etching area corresponds to the light-emitting aperture ring;

etching the substrate at the etching area until the thickness of the substrate is not more than the thickness of the substrate;

and depositing an annular aluminum arsenide layer at the etched position of the substrate.

In an alternative embodiment, after the step of depositing the annular aluminum arsenide layer at the etched position of the substrate, the method further includes:

stripping the coated photoresist and the aluminum arsenide material on the photoresist;

and cleaning the laser.

In an alternative embodiment, the annular inner diameter of the aluminum arsenide layer is smaller than or equal to the light exit aperture of the oxide layer.

In an alternative embodiment, the aluminum arsenide layer has a depth of 3um to 200 um.

In an alternative embodiment, the substrate has a thickness of 500um to 600 um.

In a second aspect, the present invention provides a high heat dissipation vertical cavity surface emitting laser, comprising:

the light-emitting aperture ring area on the front surface of the substrate is provided with an etching groove, and the substrate consists of gallium arsenide;

an aluminum arsenide layer formed in the etched groove of the substrate;

sequentially epitaxially growing an N-DBR layer, an MQW layer and a P-DBR layer formed on one side of the substrate on which the aluminum arsenide layer grows;

an oxide layer which is formed inside the P-DBR layer and close to the MQW layer to form a light-emitting aperture;

a contact layer and a ring-shaped front electrode formed on the side of the P-DBR layer far away from the MQW layer;

and the back electrode is formed on one side of the substrate far away from the N-DBR layer.

In an alternative embodiment, the annular inner diameter of the aluminum arsenide layer is smaller than or equal to the light exit aperture of the oxide layer.

In an alternative embodiment, the aluminum arsenide layer has a depth of 3um to 200 um.

In an alternative embodiment, the substrate has a thickness of 500um to 600 um.

The beneficial effects of the embodiment of the invention include, for example:

the application provides a manufacturing method of a high-heat-dissipation vertical-cavity surface-emitting laser, which comprises the steps of etching a light-emitting aperture ring area on the front surface of a substrate to a thickness not exceeding the thickness of the substrate before epitaxial growth, and depositing an aluminum arsenide layer at the etching position, wherein the substrate is composed of gallium arsenide. And then epitaxially growing an N-DBR layer, an MQW layer and a P-DBR layer in sequence on the side of the substrate on which the aluminum arsenide layer is deposited, and performing an oxidation process on the side of the P-DBR layer close to the MQW layer to form an oxide layer with an internal light-emitting aperture. Finally, a contact layer and a ring-shaped front electrode are formed on one side of the P-DBR layer, and a back electrode is formed on the side of the substrate away from the N-DBR layer. The manufacturing method can grow the aluminum arsenide layer before epitaxial growth, when the heat accumulated by the MQW layer is conducted downwards, the heat conduction coefficient of the aluminum arsenide is superior to that of gallium arsenide, the heat dissipation and conduction efficiency of the aluminum arsenide to the back electrode is higher, the heat dissipation is faster, the heat dissipation performance of the whole device is further improved, the lattice constants of the aluminum arsenide and the gallium arsenide are matched, and the influence of epitaxial growth after the substrate is etched and the aluminum arsenide layer is deposited is smaller.

In addition, the application also provides a high-heat-dissipation vertical-cavity surface-emitting laser, which comprises a substrate and an aluminum arsenide layer formed in an etching groove formed in the light emergent ring area of the substrate, wherein the substrate is composed of gallium arsenide. In addition, the optical waveguide further comprises an N-DBR layer, an MQW layer and a P-DBR layer which are formed by epitaxial growth in sequence, and an oxide layer which forms a light-emitting aperture inside is formed at the edge area of the P-DBR layer. The semiconductor device further includes a contact layer and a ring-shaped P electrode formed on the P-DBR layer side, and a back electrode formed on the substrate side away from the N-DBR layer. The laser can improve the heat dissipation capacity of the device through the aluminum arsenide layer formed in the etching groove of the substrate, and further improves the high-temperature characteristic of the laser.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

Fig. 1 is a flowchart of a method for manufacturing a high-heat-dissipation vertical cavity surface emitting laser according to an embodiment of the present disclosure;

FIG. 2 is a schematic structural diagram of a substrate and an etched groove provided in an embodiment of the present application;

FIG. 3 is a schematic structural diagram of a substrate and an aluminum arsenide layer provided in an embodiment of the present application;

FIG. 4 is a flowchart of sub-steps included in step S110 of FIG. 1;

fig. 5 is a schematic view of a hierarchical structure of a vcsel provided in an embodiment of the present application;

FIG. 6 is a schematic top view of an aluminum arsenide layer provided in embodiments of the present application.

Icon: 10-a substrate; 11-etching a groove; 20-an aluminum arsenide layer; a 30-N-DBR layer; a 40-MQW layer; a 50-P-DBR layer; 51-an oxide layer; 60-a contact layer; 70-a front electrode; 80-back electrode.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.

It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.

Referring to fig. 1, a schematic flow chart of a method for manufacturing a high-heat-dissipation vertical cavity surface emitting laser according to an embodiment of the present application is shown, and referring to fig. 2 and fig. 3, the method can be used for manufacturing a high-heat-dissipation vertical cavity surface emitting laser, and a detailed process of the method will be described below.

Step S110, before epitaxial growth, etching the aperture ring region on the front surface of the substrate 10 to a thickness not exceeding the thickness of the substrate 10, and depositing an aluminum arsenide layer 20 at the etching position.

In this embodiment, the light exit aperture ring region is an annular region corresponding to the position of the light exit aperture of the device, the current of the powered VCSEL is mainly concentrated near the light exit aperture ring, and the heat generation thereof is also mainly concentrated near the light exit aperture ring.

In this step, as a possible implementation manner, the deposition of the aluminum arsenide layer 20 may be the aluminum arsenide layer 20 formed at the etching position after etching the edge of the substrate 10, as shown in fig. 3. In detail, referring to fig. 4, step S110 may include the following sub-steps:

in step S111, a photoresist is coated on the front surface of the provided substrate 10.

Step S112, adding a mask and performing exposure processing to define an etching area on the front surface of the substrate 10, where the etching area corresponds to the position of the light-emitting aperture ring.

Step S113, etching the substrate 10 at the etching region until the thickness of the substrate 10 is not exceeded.

Step S114, depositing an annular aluminum arsenide layer 20 on the etched position of the substrate 10.

In this embodiment, the photoresist to be coated may be a positive photoresist, and the photomask used may be a photomask with an annular hollow portion. Thus, after adding a mask and exposing and developing, the photoresist at the edge of the substrate 10 is dissolved by exposure, and an etching area can be defined at the edge of the substrate 10. The etched area is a ring-shaped area located at the edge of the substrate 10. The annular area is the light-emitting hole ring area.

Alternatively, the coated photoresist may be a negative photoresist, and the mask used may be an annular mask, so that after the mask is added and exposed and developed, the negative photoresist on the substrate 10 in the region not corresponding to the annular mask position is remained due to exposure, and the negative photoresist on the substrate 10 corresponding to the annular mask position is dissolved due to non-exposure. Thus, a ring-shaped etching region is defined at the edge of the substrate 10.

On this basis, the substrate 10 can be etched to form the etched groove 11 based on the defined etching region, that is, the ring-shaped region of the substrate 10 is etched, the etching depth is less than the thickness of the substrate 10, for example, the etching depth can be 3um to 200um, and the thickness of the substrate can be 500um to 600 um. The etching manner may be wet etching, for example, etching with acetic acid. In addition, dry etching may also be employed.

After the etching is completed, a ring of etching grooves 11 is formed at the edge of the substrate 10, as shown in fig. 2. An annular aluminum arsenide layer 20 may be deposited in the etched recess 11 formed at the etched location of the substrate 10, as shown in figure 3.

In the present embodiment, the aluminum arsenide layer 20 is annular, may be annular with a circular inner ring, or may be annular with an elliptical, square, polygonal inner ring, or the like, and the present embodiment is not limited to this.

In this embodiment, the substrate 10 is composed of gallium arsenide. Aluminum arsenide has a thermal conductivity of 0.9W/cm.k, while gallium arsenide has a thermal conductivity of 0.55W/cm.k. Aluminum arsenide has a higher thermal conductivity than gallium arsenide. The current of the electrified VCSEL is mainly concentrated near the light-emitting aperture ring, the heating of the electrified VCSEL is also mainly concentrated in the light-emitting aperture ring area, when the heat accumulated by the MQW layer 40 is conducted downwards, the heat conduction coefficient of aluminum arsenide is superior to that of gallium arsenide, the efficiency of conducting the heat to the back metal electrode is higher, the heat dissipation is faster, and the heat dissipation performance of the whole VCSEL device is further improved.

In addition, the lattice constants of aluminum arsenide and gallium arsenide are very close, so that the heat dissipation performance of the device can be improved on the basis of not influencing the subsequent epitaxial growth quality by etching and depositing the aluminum arsenide layer 20 on a partial region of the gallium arsenide substrate 10.

In this embodiment, after the aluminum arsenide layer 20 is formed by deposition, the manufacturing method further includes the following steps:

and stripping the coated photoresist and the aluminum arsenide material on the photoresist, and cleaning the laser.

In this embodiment, after the deposition of the aluminum arsenide layer 20, the deposited aluminum arsenide material is located on the peripheral etching groove 11 and the photoresist in the central area, and the photoresist and the aluminum arsenide material on the photoresist are stripped by stripping the photoresist on the substrate 10, so as to leave the aluminum arsenide layer 20 located in the etching groove 11. In order to avoid the influence on the subsequent manufacturing, the laser after stripping the photoresist can be cleaned.

In addition, in another possible embodiment, the deposited aluminum arsenide layer 20 may be deposited after thinning the entire surface of the substrate 10. In detail, the formation of the aluminum arsenide layer 20 may also be achieved by:

and performing a thinning process on one side of the provided substrate 10, and depositing an aluminum arsenide layer 20 on the whole surface of the thinned substrate 10.

In this embodiment, the provided substrate 10 may be thinned, and the substrate 10 may be thinned by grinding the substrate 10, where the grinding thickness may be between 3um and 200 um. An aluminum arsenide layer 20 is formed on the ground substrate 10 by depositing aluminum arsenide. That is, the step of forming the etched groove 11 is to etch the entire surface of the substrate 10.

In this embodiment, the formed aluminum arsenide layer 20 may be fully covered on the substrate 10, and since the current of the energized VCSEL is mainly concentrated near the light exit aperture, the heat generation thereof is also mainly concentrated near the light exit aperture. The substrate 10 is etched on the whole surface and deposited to form the aluminum arsenide layer 20, and the formed aluminum arsenide layer 20 may also correspond to the light emitting aperture ring, so that the effect of improving the heat dissipation performance of the device can be achieved.

In this embodiment, the substrate 10 may be partially etched and the aluminum arsenide layer 20 may be formed in the etched groove 11, or the substrate 10 may be thinned to deposit the aluminum arsenide layer 20 on the thinned substrate 10, and this embodiment is not limited in particular.

On the basis, referring to fig. 5, the manufacturing method of the present embodiment further includes the following steps.

In step S120, an N-DBR layer 30, an MQW layer 40 and a P-DBR layer 50 are epitaxially grown in this order on the side of the substrate 10 where the aluminum arsenide layer 20 is deposited.

In step S130, an oxidation process is performed on the P-DBR layer 50 on the side close to the MQW layer to form an oxide layer 51 having an internal light exit aperture.

In step S140, a contact layer 60 and a ring-shaped front electrode 70 are formed on the P-DBR layer 50 on the side away from the MQW layer 40.

In step S150, a back electrode 80 is formed on the side of the substrate 10 away from the N-DBR layer 30.

In this embodiment, the N-DBR layer 30 includes a first distributed Bragg reflector (DBR mirror) disposed in a stack, the MQW layer 40 includes a quantum well structure disposed in a stack, and the P-DBR layer 50 includes a second distributed Bragg reflector (DBR mirror) disposed in a stack.

Wherein each first Bragg reflector comprises a Si layer and SiO on the Si layer₂The layers are arranged in series, and the MQW layer 40 comprises a plurality of stacked quantum well structures, each of which may comprise a GaAs layer and an arrangement of AlGaAs layers on the GaAs layer. Each second distributed bragg mirror may include a GaAs layer and an AlGaAs layer on the GaAs layer.

An oxidation process is performed on the side of the P-DBR layer 50 adjacent to the MQW layer 40 to form a ring of Al₂O₃Oxide layer 51 is formed, and the inside of oxide layer 51 can form a light-emitting aperture.

On this basis, the contact layer 60 and the front electrode 70 are formed in this order. After the contact layer 60 is formed, the front electrode 70 may be formed on the surface of the contact layer 60 by electron beam sputtering, the front electrode 70 may be a Ti-Pt-Au structure, and the front electrode 70 may be a ring. The rear electrode 80 may be formed by vapor deposition on the rear surface of the substrate 10 by a vacuum deposition apparatus. The back electrode 80 may employ a Ge/Au/Ni-Au structure.

In this embodiment, device heat is generated in the MQW layer 40 and conducted in both the up and down directions, the heat generation having an effect on each level of the laser. The oxide layer 51 limits the current to pass through the light-emitting hole, and the edge of the light-emitting hole is the region with the most intensive current and the region with the most serious heat generation. Therefore, in the embodiment of depositing the aluminum arsenide layer 20 after etching the substrate 10, as shown in fig. 5, the annular inner diameter D of the aluminum arsenide layer is smaller than or equal to the light exit aperture D of the oxide layer 51, for example, as shown in fig. 6, a schematic diagram of a top view of the device is shown, where the annular region is a light exit aperture ring region, that is, the position of the deposited aluminum arsenide layer 20 corresponds to the position of the annular region. And a circle in the annular area indicates the edge of the light exit aperture, i.e. the light exit aperture.

Thus, the aluminum arsenide layer 20 can reduce the temperature at the edge of the light-emitting hole where heat is most generated, thereby improving the heat dissipation performance of the whole device.

The method for manufacturing the high-heat-dissipation vertical cavity surface emitting laser provided in this embodiment may be performed by partially etching the substrate 10 before epitaxial growth, and then depositing the aluminum arsenide layer 20 at the etching position, or may be performed by depositing the aluminum arsenide layer 20 completely covering the substrate 10 after performing the whole surface thinning process on the substrate 10. Since the heat dissipation coefficient of aluminum arsenide is higher than that of gallium arsenide, the heat dissipation performance of the device can be improved by using the aluminum arsenide layer 20, and the lattice constant of aluminum arsenide is close to that of gallium arsenide, so that the subsequent epitaxial growth is not affected.

In addition, the high heat dissipation vertical cavity surface emitting laser according to the embodiment of the present application can be manufactured by the above manufacturing method.

Referring to fig. 5, the laser may include a substrate 10, and the light exit aperture area on the front surface of the substrate 10 has an etched groove 11. In addition, an aluminum arsenide layer 20 formed in the etched recess 11 of the substrate 10 is included, wherein the substrate 10 is comprised of gallium arsenide.

As a possible embodiment, one side of the substrate 10 has a ring-shaped etched groove 11, the aluminum arsenide layer 20 is ring-shaped, and the aluminum arsenide layer 20 is deposited in the etched groove 11 of the substrate 10.

Wherein, the inner circle of annular aluminum arsenide layer 20 can be circular, oval, square or polygonal, the depth of aluminum arsenide layer 20 is less than the thickness of substrate 10, the depth of aluminum arsenide layer 20 can be 3um-200um, the thickness of substrate 10 can be 500um-600 um.

As another possible embodiment, the substrate 10 may be the substrate 10 after the thinning process is performed, and the aluminum arsenide layer 20 is deposited on the front surface of the substrate 10 in a full coverage manner. By using the fully covered aluminum arsenide layer 20 formed on the substrate 10, the heat dissipation performance of the device can be greatly improved.

In addition to the above, the laser further includes an N-DBR layer 30, an MQW layer 40, and a P-DBR layer 50 epitaxially grown in this order on the side of the substrate 10 where the aluminum arsenide layer 20 is grown.

Wherein the N-DBR layer 30 includes a first distributed bragg reflector arranged in a stack, the MQW layer 40 includes a quantum well structure arranged in a stack, and the P-DBR layer 50 includes a second distributed bragg reflector arranged in a stack.

Each first Bragg reflector may be composed of a Si layer and SiO located on the Si layer₂The layers are arranged in series, and the MQW layer 40 comprises a plurality of stacked quantum well structures, each of which may comprise a GaAs layer and an arrangement of AlGaAs layers on the GaAs layer. Each second distributed bragg mirror may include a GaAs layer and an AlGaAs layer on the GaAs layer.

The laser further comprises an oxide layer 51 formed on the P-DBR layer 50 adjacent to the MQW layer 40 and forming an exit aperture, wherein the oxide layer 51 may be Al₂O₃And (4) forming. The oxide layer 51 forms a light-emitting hole therein, and restricts the current to pass through the light-emitting hole. The heat generation is most severe in the edge area of the light exit hole. Therefore, in the embodiment in which the aluminum arsenide layer 20 has a ring structure, the ring inner diameter formed inside the aluminum arsenide layer 20 is smaller than or equal to the light extraction inner diameter formed by the oxide layer 51, so that the device temperature can be effectively reduced by the aluminum arsenide layer 20.

In addition to the above, the laser further includes a contact layer 60 and a ring-shaped front electrode 70 formed on the P-DBR layer 50 side away from the MQW layer 40, and a rear electrode 80 formed on the substrate 10 side away from the N-DBR layer 30.

The front electrode 70 may be a Ti-Pt-Au structure, and the front electrode 70 may be a ring. The back electrode 80 may have a Ge/Au/Ni-Au structure and may have a disk shape.

In the laser provided in this embodiment, the annular aluminum arsenide layer 20 formed in the light exit aperture ring region of the substrate 10 or the aluminum arsenide layer 20 fully covering the front surface of the substrate 10 is used, and the heat dissipation performance of the device can be improved by using the characteristic of higher heat dissipation coefficient of the aluminum arsenide layer 20.

The laser provided in this embodiment can be manufactured by the above manufacturing method, and therefore, has the same characteristics as the laser in the above manufacturing method, and reference may be made to the related description in the above embodiments for details which are not described in this embodiment.

To sum up, in the method for manufacturing a high-heat-dissipation vertical cavity surface emitting laser provided in the embodiment of the present application, before epitaxial growth, the light exit aperture ring region on the front surface of the substrate 10 is etched to a thickness not exceeding the thickness of the substrate 10, and an aluminum arsenide layer 20 is deposited at the etching position, where the substrate 10 is composed of gallium arsenide. Then, the N-DBR layer 30, the MQW layer 40, and the P-DBR layer 50 are epitaxially grown in this order on the side of the substrate 10 where the aluminum arsenide layer 20 is deposited, and an oxidation process is performed on the side of the P-DBR layer 50 near the MQW layer 40 to form an oxide layer 51 in which a light exit aperture is formed. Finally, a contact layer 60 and a ring-shaped front electrode 70 are formed on the P-DBR layer 50 side, and a rear electrode 80 is formed on the substrate 10 side away from the N-DBR layer 30. The manufacturing method can grow the aluminum arsenide layer 20 before epitaxial growth, when the heat accumulated by the MQW layer 40 is conducted downwards, the heat conduction coefficient of the aluminum arsenide is superior to that of gallium arsenide, the heat dissipation efficiency of the aluminum arsenide to the back metal electrode is higher, the heat dissipation is faster, the heat dissipation performance of the whole device is further improved, the lattice constants of the aluminum arsenide and the gallium arsenide are matched, and the influence of epitaxial growth after the substrate 10 is etched and the aluminum arsenide layer 20 is deposited is smaller.

Further, the vertical cavity surface emitting laser with high heat dissipation provided by the present embodiment includes a substrate 10 and an aluminum arsenide layer 20 formed in an etching groove 11 formed in a light exit aperture ring region of the substrate 10, where the substrate 10 is composed of gallium arsenide. Further, the optical waveguide device includes an N-DBR layer 30, an MQW layer 40, and a P-DBR layer 50 which are formed by epitaxial growth in this order, and an oxide layer 51 which forms an aperture for light emission inside is formed in the edge region of the P-DBR layer 50. The semiconductor device further includes a contact layer 60 and a ring-shaped front electrode 70 formed on the P-DBR layer 50 side, and a rear electrode 80 formed on the substrate 10 side away from the N-DBR layer 30. The laser can improve the heat dissipation capacity of the device through the aluminum arsenide layer 20 formed in the etching groove 11 of the substrate 10, and further improves the high-temperature characteristic of the laser.

The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.