阅读说明：本技术 一种硅基双面垂直腔面发射激光器及其制备方法 (Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof ) 是由 杨翠柏 于 2021-09-08 设计创作，主要内容包括：本发明提供了一种硅基双面垂直腔面发射激光器及其制备方法,硅基双面垂直腔面发射激光器包括以下结构：经过双面抛光的p型单晶硅衬底；第一p型缓冲层,位于与所述抛光的上表面相接触的表面上；第二p型缓冲层,位于与所述抛光的下表面相接触的表面上,所述第一p型缓冲层的材料和所述第二p型缓冲层的材料不同；短波激光发射模组,所述短波激光发射模组的量子点结构为非掺杂的GaNP/InP/GaNP；长波激光发射模组的量子点结构为非掺杂的GaNAs/InAs/GaNAs。本发明的硅基双面垂直腔面发射激光器中,可基于单晶硅衬底制备得到短波长波共存的VCSEL器件,方便应用于功能集成度较高的通信、传感、智能控制等系统。(The invention provides a silicon-based double-sided vertical cavity surface emitting laser and a preparation method thereof, wherein the silicon-based double-sided vertical cavity surface emitting laser comprises the following structures: a p-type single crystal silicon substrate subjected to double-side polishing; a first p-type buffer layer on a surface in contact with the polished upper surface; a second p-type buffer layer on a surface in contact with the polished lower surface, the first p-type buffer layer being of a different material than the second p-type buffer layer; the quantum dot structure of the short-wave laser emission module is undoped GaNP/InP/GaNP; the quantum dot structure of the long-wave laser emission module is undoped GaNAs/InAs/GaNAs. In the silicon-based double-sided vertical cavity surface emitting laser, the VCSEL device with short wave and long wave coexisting can be prepared based on the monocrystalline silicon substrate, and the silicon-based double-sided vertical cavity surface emitting laser can be conveniently applied to systems with higher function integration level, such as communication, sensing, intelligent control and the like.)

1. A silicon-based double-sided vertical cavity surface emitting laser is characterized by comprising the following structures:

a substrate, which is a p-type monocrystalline silicon substrate having a polished upper surface and a polished lower surface;

a first p-type buffer layer on a surface in contact with the polished upper surface;

a second p-type buffer layer on a surface in contact with the polished lower surface, the first p-type buffer layer being of a different material than the second p-type buffer layer;

the short-wave laser emission module is arranged on the first p-type buffer layer on the upper surface of the substrate and comprises a quantum dot short-wave laser emission unit, and a quantum dot structure in the quantum dot short-wave laser emission unit is undoped GaNP/InP/GaNP; and

the long-wave laser emission module is arranged on the second p-type buffer layer on the lower surface of the substrate and comprises a quantum dot long-wave laser emission unit, and the quantum dot structure in the quantum dot long-wave laser emission unit is undoped GaNAs/InAs/GaNAs.

2. The silicon-based double-sided vertical cavity surface emitting laser according to claim 1, wherein the short wave laser emitting module comprises a p-type DBR short wave reflective layer, a quantum dot short wave laser emitting unit, an n-type DBR short wave reflective layer and an upper surface n-type electrode contact layer which are stacked in sequence.

3. The silicon-based double-sided vertical cavity surface emitting laser according to claim 2, wherein the p-type DBR short wave reflective layer is disposed on a surface of the first p-type buffer layer away from the p-type single crystal silicon substrate;

the quantum dot short-wave laser emission unit is arranged on the surface, far away from the first p-type buffer layer, of the p-type DBR short-wave reflection layer;

the n-type DBR short-wave reflecting layer is arranged on the surface, far away from the p-type DBR short-wave reflecting layer, of the quantum dot short-wave laser emission unit;

and the upper surface n-type electrode contact layer is arranged on the surface of the quantum dot short-wave laser emission unit far away from the n-type DBR short-wave reflection layer.

4. The silicon-based double-sided vertical cavity surface emitting laser according to claim 1, wherein the long wave laser emitting module comprises a p-type DBR long wave reflective layer, a quantum dot long wave laser emitting unit, an n-type DBR long wave reflective layer and a lower surface n-type electrode contact layer, which are stacked in sequence.

5. The silicon-based double-sided vertical cavity surface emitting laser according to claim 4, wherein the p-type DBR long wavelength reflective layer is disposed on the surface of the second p-type buffer layer away from the p-type single crystal silicon substrate;

the quantum dot long-wave laser emission unit is arranged on the surface, far away from the second p-type buffer layer, of the p-type DBR long-wave reflection layer;

the n-type DBR long-wave reflecting layer is arranged on the surface, far away from the p-type DBR long-wave reflecting layer, of the quantum dot long-wave laser emitting unit;

the lower surface n-type electrode contact layer is arranged on the surface, far away from the quantum dot long-wave laser emission unit, of the n-type DBR long-wave reflection layer.

6. The silicon-based double-sided vertical cavity surface emitting laser according to claim 1, wherein the material of the first p-type buffer layer is p-type GaNP, and the thickness of the first p-type buffer layer is 300-1000 nm; the second p-type buffer layer is made of p-type GaNAs, and the thickness of the second p-type buffer layer is 200-800 nm.

7. The silicon-based double-sided vertical cavity surface emitting laser according to claim 1, wherein the p-type DBR short wave reflective layer comprises 40-60 pairs of p-type doped GaNP/AlNP;

the number of quantum dot layers in the quantum dot short-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 800-980 nm;

the n-type DBR short-wave reflecting layer comprises 30-50 pairs of n-type doped GaNP/AlNP; the upper surface n-type electrode contact layer is made of n-type doped GaNP with the doping concentration of more than 5 x 10¹⁸cm^-3The thickness is 100 to 500 nm.

8. The silicon-based double-sided vertical cavity surface emitting laser according to claim 1, wherein the p-type DBR long wavelength reflective layer comprises 30-50 pairs of p-type doped GaNAs/alinas;

the number of quantum dot layers in the quantum dot long-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 1300-1550 nm; the n-type DBR long-wave reflecting layer comprises 20-40 pairs of n-type doped GaNAs/AlNAs;

the material of the lower surface n-type electrode contact layer is n-type doped GaNAs, and the doping concentration of the lower surface n-type electrode contact layer is more than 5 multiplied by 10¹⁸cm^-3The thickness is 100 to 500 nm.

9. A preparation method of a silicon-based double-sided vertical cavity surface emitting laser is characterized by comprising the following steps:

step S01: providing a double-sided polished p-type single crystal Si substrate, and forming a first p-type buffer layer on the p-type single crystal Si substrate;

step S02: growing a p-type DBR short-wave reflecting layer on the first p-type buffer layer;

step S03: growing a quantum dot short-wave laser emission unit on the p-type DBR short-wave reflecting layer, wherein the quantum dot structure is undoped GaNP/InP/GaNP;

step S04: growing an n-type DBR short-wave reflecting layer on the quantum dot short-wave laser emission unit;

step S05: growing an upper surface n-type GaNP electrode contact layer on the n-type DBR short-wave reflecting layer;

step S06: turning the double-side polished p-type single crystal Si substrate by 180 degrees to enable the lower surface of the substrate to face upwards;

step S07: forming a second p-type buffer layer on the lower surface of the single crystal Si substrate, wherein the material of the first p-type buffer layer is different from that of the second p-type buffer layer;

step S08: growing a p-type DBR long-wave reflecting layer on the second p-type buffer layer;

step S09: growing a quantum dot long-wave laser emission unit on the p-type DBR long-wave reflection layer, wherein the quantum dot structure is undoped GaNAs/InAs/GaNAs;

step S010: growing an n-type DBR long-wave reflecting layer on the quantum dot long-wave laser emission unit;

step S011: and growing a lower surface n-type GaNAs electrode contact layer on the n-type DBR long-wave reflecting layer.

10. The silicon-based double-sided vertical cavity surface emitting laser according to claim 9, wherein the material of the first p-type buffer layer is p-type GaNP, and the thickness of the first p-type buffer layer is 300-1000 nm; the second p-type buffer layer is made of p-type GaNAs, and the thickness of the second p-type buffer layer is 200-800 nm;

the p-type DBR short-wave reflecting layer comprises 40-60 pairs of p-type doped GaNP/AlNP;

the number of quantum dot layers in the quantum dot short-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 800-980 nm;

the n-type DBR short-wave reflecting layer comprises 30-50 pairs of n-type doped GaNP/AlNP; the upper surface n-type electrode contact layer is made of n-type doped GaNP with the doping concentration of more than 5 x 10¹⁸cm^-3The thickness is 100-500 nm;

the p-type DBR long-wave reflecting layer comprises 30-50 pairs of p-type doped GaNAs/AlNAs;

the number of quantum dot layers in the quantum dot long-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 1300-1550 nm; the n-type DBR long-wave reflecting layer comprises 20-40 pairs of n-type doped GaNAs/AlNAs;

the material of the lower surface n-type electrode contact layer is n-type doped GaNAs, and the doping concentration of the lower surface n-type electrode contact layer is more than 5 multiplied by 10¹⁸cm^-3The thickness is 100 to 500 nm.

Technical Field

The invention relates to the technical field of semiconductor lasers, in particular to a silicon-based double-sided vertical cavity surface emitting laser and a preparation method thereof.

Background

Semiconductor Vertical Cavity Surface Emitting Lasers (VCSELs) can achieve different lasing wavelengths by using active region materials of different characteristic wavelengths. The short-wavelength VCSEL with the lasing wavelength ranging from 800nm to 980nm can be applied to the fields of data centers, 3D sensing, medical sensing and the like, and the long-wavelength VCSEL with the lasing wavelength ranging from 1300 nm to 1550nm can be applied to the fields of long-distance optical communication, vehicle-mounted radars, industrial long-distance detection and the like. With the increasing integration degree of communication, sensing, intelligent control and other systems, the same system often needs two VCSELs with different wavelengths to be suitable for different application scenarios. However, integration of short and long wavelength VCSELs on the same material substrate still requires overcoming many technical problems such as thermal expansion coefficient, lattice matching, etc.

Disclosure of Invention

The invention provides a silicon-based double-sided vertical cavity surface emitting laser, which can be used for preparing a dual-wavelength VCSEL with the lasing wavelength of 800-980 nm and 1300-1550 nm based on a double-sided polished crystalline silicon substrate. Compared with the traditional GaAs-based short-wavelength VCSEL and InP-based long-wavelength VCSEL, the silicon-based double-sided vertical cavity surface emitting laser can be used for preparing a VCSEL device with short wave and long wave coexisting directly based on a monocrystalline silicon wafer, is conveniently applied to systems with higher functional integration such as communication, sensing, intelligent control and the like, and can simplify the integration process of the laser and a silicon-based circuit system while reducing the material cost by adopting a silicon wafer to replace a compound substrate.

Specifically, the scheme provided by the invention is as follows:

the invention provides a silicon-based double-sided vertical cavity surface emitting laser, which comprises the following structures:

a substrate, which is a p-type monocrystalline silicon substrate having a polished upper surface and a polished lower surface;

a first p-type buffer layer on a surface in contact with the polished upper surface;

a second p-type buffer layer on a surface in contact with the polished lower surface, the first p-type buffer layer being of a different material than the second p-type buffer layer;

the short-wave laser emission module is arranged on the first p-type buffer layer on the upper surface of the substrate and comprises a quantum dot short-wave laser emission unit, and a quantum dot structure in the quantum dot short-wave laser emission unit is undoped GaNP/InP/GaNP; and

the long-wave laser emission module is arranged on the second p-type buffer layer on the lower surface of the substrate and comprises a quantum dot long-wave laser emission unit, and the quantum dot structure in the quantum dot long-wave laser emission unit is undoped GaNAs/InAs/GaNAs.

Further, shortwave laser emission module is including piling up p type DBR shortwave reflection stratum, quantum dot shortwave laser emission unit, n type DBR shortwave reflection stratum and the upper surface n type electrode contact layer that sets up in proper order.

Further, the p-type DBR short-wave reflecting layer is arranged on the surface, far away from the p-type monocrystalline silicon substrate, of the first p-type buffer layer;

the quantum dot short-wave laser emission unit is arranged on the surface, far away from the first p-type buffer layer, of the p-type DBR short-wave reflection layer;

the n-type DBR short-wave reflecting layer is arranged on the surface, far away from the p-type DBR short-wave reflecting layer, of the quantum dot short-wave laser emission unit;

and the upper surface n-type electrode contact layer is arranged on the surface of the quantum dot short-wave laser emission unit far away from the n-type DBR short-wave reflection layer.

Furthermore, the long-wave laser emission module comprises a p-type DBR long-wave reflecting layer, a quantum dot long-wave laser emission unit, an n-type DBR long-wave reflecting layer and a lower surface n-type electrode contact layer which are sequentially stacked.

Further, the p-type DBR long-wave reflecting layer is arranged on the surface, away from the p-type monocrystalline silicon substrate, of the second p-type buffer layer;

the quantum dot long-wave laser emission unit is arranged on the surface, far away from the second p-type buffer layer, of the p-type DBR long-wave reflection layer;

the n-type DBR long-wave reflecting layer is arranged on the surface, far away from the p-type DBR long-wave reflecting layer, of the quantum dot long-wave laser emitting unit;

the lower surface n-type electrode contact layer is arranged on the surface, far away from the quantum dot long-wave laser emission unit, of the n-type DBR long-wave reflection layer.

Further, the first p-type buffer layer is made of p-type GaNP, and the thickness of the first p-type buffer layer is 300-1000 nm; the second p-type buffer layer is made of p-type GaNAs, and the thickness of the second p-type buffer layer is 200-800 nm.

Further, the p-type DBR short-wave reflecting layer comprises 40-60 pairs of p-type doped GaNP/AlNP;

the number of quantum dot layers in the quantum dot short-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 800-980 nm;

the n-type DBR short-wave reflecting layer comprises 30-50 pairs of n-type doped GaNP/AlNP; the upper surface n-type electrode contact layer is made of n-type doped GaNP with the doping concentration of more than 5 x 10¹⁸cm^-3The thickness is 100 to 500 nm.

Further, the p-type DBR long-wave reflecting layer comprises 30-50 pairs of p-type doped GaNAs/AlNAs;

the number of quantum dot layers in the quantum dot long-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 1300-1550 nm; the n-type DBR long-wave reflecting layer comprises 20-40 pairs of n-type doped GaNAs/AlNAs;

the material of the lower surface n-type electrode contact layer is n-type doped GaNAs, and the doping concentration of the lower surface n-type electrode contact layer is more than 5 multiplied by 10¹⁸cm^-3The thickness is 100 to 500 nm.

The invention also provides a preparation method of the silicon-based double-sided vertical cavity surface emitting laser, which comprises the following steps:

step S01: providing a double-sided polished p-type single crystal Si substrate, and forming a first p-type buffer layer on the p-type single crystal Si substrate;

step S02: growing a p-type DBR short-wave reflecting layer on the first p-type buffer layer;

step S03: growing a quantum dot short-wave laser emission unit on the p-type DBR short-wave reflecting layer, wherein the quantum dot structure is undoped GaNP/InP/GaNP;

step S04: growing an n-type DBR short-wave reflecting layer on the quantum dot short-wave laser emission unit;

step S05: growing an upper surface n-type GaNP electrode contact layer on the n-type DBR short-wave reflecting layer;

step S06: turning the double-side polished p-type single crystal Si substrate by 180 degrees to enable the lower surface of the substrate to face upwards;

step S07: forming a second p-type buffer layer on the lower surface of the single crystal Si substrate, wherein the material of the first p-type buffer layer is different from that of the second p-type buffer layer;

step S08: growing a p-type DBR long-wave reflecting layer on the second p-type buffer layer;

step S09: growing a quantum dot long-wave laser emission unit on the p-type DBR long-wave reflection layer, wherein the quantum dot structure is undoped GaNAs/InAs/GaNAs;

step S010: growing an n-type DBR long-wave reflecting layer on the quantum dot long-wave laser emission unit;

step S011: and growing a lower surface n-type GaNAs electrode contact layer on the n-type DBR long-wave reflecting layer.

Further, the first p-type buffer layer is made of p-type GaNP, and the thickness of the first p-type buffer layer is 300-1000 nm; the second p-type buffer layer is made of p-type GaNAs, and the thickness of the second p-type buffer layer is 200-800 nm;

the p-type DBR short-wave reflecting layer comprises 40-60 pairs of p-type doped GaNP/AlNP;

the number of quantum dot layers in the quantum dot short-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 800-980 nm;

the n-type DBR short-wave reflecting layer comprises 30-50 pairs of n-type doped GaNP/AlNP; the upper surface n-type electrode contact layer is made of n-type doped GaNP with the doping concentration of more than 5 x 10¹⁸cm^-3The thickness is 100-500 nm;

the p-type DBR long-wave reflecting layer comprises 30-50 pairs of p-type doped GaNAs/AlNAs;

the number of quantum dot layers in the quantum dot long-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 1300-1550 nm; the n-type DBR long-wave reflecting layer comprises 20-40 pairs of n-type doped GaNAs/AlNAs;

the material of the lower surface n-type electrode contact layer is n-type doped GaNAs, and the doping concentration of the lower surface n-type electrode contact layer is more than 5 multiplied by 10¹⁸cm^-3The thickness is 100 to 500 nm.

In the technical scheme of the invention, the silicon-based double-sided vertical cavity surface emitting laser can be used for preparing a VCSEL device with coexisting short waves and long waves based on a monocrystalline silicon substrate, and is conveniently applied to systems with higher functional integration level, such as communication, sensing, intelligent control and the like. Meanwhile, the silicon-based double-sided vertical cavity surface emitting laser provided by the application can also adopt a crystalline silicon substrate to replace a GaAs, InP and other compound substrates, so that the manufacturing cost is reduced, and the integration process of the laser and a silicon-based circuit system can be simplified.

Furthermore, the upper surface and the lower surface of the monocrystalline silicon substrate are polished, so that the monocrystalline silicon substrate can be better matched with the lattice of an upper layer structure and environmental stress, and buffer layers formed on the upper surface and the lower surface of the substrate are different according to the difference of long-wavelength and short-wavelength vertical cavity surface emitting lasers formed on the upper surface and the lower surface of the monocrystalline silicon; the quantum dot structure in the quantum dot long-wave laser emission unit in the long-wave VCSEL device is undoped GaNAs/InAs/GaNAs, the buffer layer is made of p-type GaNAs, and the lattice constant of the buffer layer is the same as that of the crystal silicon substrate, so that the VCSEL devices with different wavelengths can be better matched with the crystal silicon substrate in a lattice mode, the stress of a multilayer structure is reduced, and the stability of the device is improved.

In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic structural diagram of a silicon-based double-sided VCSEL of the present invention;

FIG. 2 is a flow chart of a method for fabricating a silicon-based double-sided VCSEL according to the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.

The application provides a silicon-based double-sided vertical cavity surface emitting laser, as shown in fig. 1, which is a schematic view of a structure of the silicon-based double-sided vertical cavity surface emitting laser, and a substrate 10; a short-wave laser emission module 20; and a long-wave laser emission module 30.

The substrate 10 is a monocrystalline Si substrate polished up and down, that is, the upper surface and the lower surface of the monocrystalline Si substrate are polished, the upper surface of the substrate 10 is provided with a first p-type buffer layer 21, the lower surface of the substrate 10 is provided with a second p-type buffer layer 31, and the material of the first p-type buffer layer 21 is different from the material of the second p-type buffer layer 31;

further, the first p-type buffer layer is made of p-type GaNP, and the thickness of the first p-type buffer layer is 300-1000 nm; the second p-type buffer layer is made of p-type GaNAs, and the thickness of the second p-type buffer layer is 200-800 nm.

Shortwave laser emission module 20 set up in the upper surface of substrate on the first p type buffer layer 21, including stacking the p type DBR shortwave reflection stratum 22, quantum dot shortwave laser emission unit 23, n type DBR shortwave reflection stratum 24 and the upper surface n type electrode contact layer 25 that sets up in proper order.

The quantum dot structure in the quantum dot short-wave laser emission unit 23 of the short-wave laser emission module is undoped GaNP/InP/GaNP;

as can be seen from fig. 1, the p-type DBR short-wave reflective layer 22 is disposed on the surface of the first p-type buffer layer 21 away from the p-type monocrystalline silicon substrate;

the quantum dot short-wave laser emission unit 23 is arranged on the surface of the p-type DBR short-wave reflection layer 22 far away from the first p-type buffer layer 21;

the n-type DBR short-wave reflecting layer 24 is arranged on the surface, away from the p-type DBR short-wave reflecting layer 22, of the quantum dot short-wave laser emission unit 23;

and the upper surface n-type electrode contact layer 25 is arranged on the surface of the n-type DBR short-wave reflecting layer 24 far away from the quantum dot short-wave laser emission unit 23.

And the long-wave laser emission module 30 is arranged on the second p-type buffer layer 31 on the lower surface of the substrate, and the long-wave laser emission module 30 comprises a p-type DBR long-wave reflecting layer 32, a quantum dot long-wave laser emission unit 33, an n-type DBR long-wave reflecting layer 34 and a lower n-type electrode contact layer 35 which are sequentially stacked.

The quantum dot structure in the quantum dot long-wave laser emission unit of the quantum dot long-wave laser emission unit 33 of the long-wave laser emission module is undoped GaNAs/InAs/GaNAs.

The p-type DBR long-wave reflecting layer 32 is arranged on the surface, far away from the p-type monocrystalline silicon substrate, of the second p-type buffer layer 31;

the quantum dot long-wave laser emission unit 33 is arranged on the surface of the p-type DBR long-wave reflection layer 32 far away from the second p-type buffer layer 31;

the n-type DBR long-wave reflecting layer 34 is arranged on the surface of the quantum dot long-wave laser emission unit 33, which is far away from the p-type DBR long-wave reflecting layer 32;

the lower n-type electrode contact layer 35 is disposed on the surface of the n-type DBR long wavelength reflective layer 34 away from the quantum dot long wavelength laser emission unit 33.

According to the difference of the vertical cavity surface emitting lasers with long wavelength and short wavelength formed on the upper surface and the lower surface of the monocrystalline silicon, buffer layers formed on the upper surface and the lower surface of the substrate are different, the quantum dot structure of a quantum dot short-wave laser emitting unit in the short-wave VCSEL device is undoped GaNP/InP/GaNP, the buffer layer is p-type GaNP, and the lattice constant of the buffer layer is the same as that of a crystalline silicon substrate; the quantum dot structure in the quantum dot long-wave laser emission unit in the long-wave VCSEL device is undoped GaNAs/InAs/GaNAs, the buffer layer is made of p-type GaNAs, and the lattice constant of the buffer layer is the same as that of a crystalline silicon substrate, so that the VCSEL devices with different wavelengths can be better matched with the crystalline silicon substrate in a lattice mode, and the stress of a multilayer structure is reduced.

The p-type DBR short-wave reflecting layer comprises 40-60 pairs of p-type doped GaNP/AlNP;

the number of quantum dot layers in the quantum dot short-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 800-980 nm;

the n-type DBR short-wave reflecting layer comprises 30-50 pairs of n-type doped GaNP/AlNP; the upper surface n-type electrode contact layer is made of n-type doped GaNP with the doping concentration of more than 5 x 10¹⁸cm^-3The thickness is 100 to 500 nm.

The p-type DBR long-wave reflecting layer comprises 30-50 pairs of p-type doped GaNAs/AlNAs;

the number of quantum dot layers in the quantum dot long-wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 1300-1550 nm; the n-type DBR long-wave reflecting layer comprises 20-40 pairs of n-type doped GaNAs/AlNAs;

the material of the lower surface n-type electrode contact layer is n-type doped GaNAs, and the doping concentration of the lower surface n-type electrode contact layer is more than 5 multiplied by 10¹⁸cm^-3The thickness is 100 to 500 nm.

In the silicon-based double-sided vertical cavity surface emitting laser provided by the invention, the VCSEL device with short wave and long wave coexisting can be prepared based on the monocrystalline silicon substrate, and the silicon-based double-sided vertical cavity surface emitting laser can be conveniently applied to systems with higher function integration level, such as communication, sensing, intelligent control and the like.

Meanwhile, the invention also provides a preparation method of the silicon-based double-sided vertical cavity surface emitting laser, which can be known by referring to a flow chart of the preparation method of the silicon-based double-sided vertical cavity surface emitting laser shown in fig. 2 and mainly comprises the following steps:

step S01: providing a double-sided polished p-type single crystal Si substrate, and forming a first p-type buffer layer on the p-type single crystal Si substrate;

the method comprises the steps of providing a p-type monocrystalline silicon substrate, polishing the two sides of the silicon substrate by using a CMP (chemical mechanical polishing) process, cleaning and drying the silicon substrate after polishing, reducing the roughness and impurities of the surface of the substrate, better performing lattice matching with a layer structure formed above the substrate, and reducing the stress among multiple layers of structures.

And then forming a first p-type buffer layer on the upper surface (one surface is arbitrarily selected as the upper surface, and the other surface is the lower surface) of the p-type single crystal Si substrate, wherein the quantum dot structure of the quantum dot short wave laser emission unit in the short wave VCSEL device formed above the surface subsequently is undoped GaNP/InP/GaNP, so that the first p-type buffer layer is p-type GaNP, and the lattice constant of the first p-type buffer layer is the same as that of the crystalline silicon substrate, thus the multilayer structure of the laser above and the substrate can be better lattice matched, and the stress between layers is reduced.

The first p-type buffer layer is made of p-type GaNP, and the thickness of the first p-type buffer layer is 300-1000 nm.

In one embodiment (the embodiment herein is only an example, and not just this specific option, the same shall apply below), a 4-inch double-side polished p-type single crystal Si wafer is selected as the substrate, and a p-type gan p-type buffer layer with a thickness of 500nm is grown on the upper surface of the Si substrate by using the metal organic chemical vapor deposition technique or the molecular beam epitaxy technique;

step S02: growing a p-type DBR short-wave reflecting layer on the first p-type buffer layer;

the p-type DBR short-wave reflecting layer comprises 40-60 pairs of p-type doped GaNP/AlNP.

In a specific embodiment, a p-type DBR short-wave reflecting layer is grown on the p-type GaNP buffer layer on the upper surface by adopting a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology and consists of p-type doped GaNP/AlNP, and the number of pairs of GaNP/AlNP is 50;

step S03: growing a quantum dot short-wave laser emission unit on the p-type DBR short-wave reflecting layer, wherein the quantum dot structure is undoped GaNP/InP/GaNP;

the number of quantum dot layers in the quantum dot short wave laser emission unit is 3-8, the diameter of each quantum dot is 5-20 nm, and the lasing wavelength of each quantum dot is 800-980 nm

In one embodiment, a quantum dot short-wave laser emission unit is grown on the p-type DBR short-wave reflecting layer by adopting a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology, the quantum dot structure in the quantum dot short-wave laser emission unit is undoped GaNP/InP/GaNP, the number of quantum dot layers is 5, the diameter of each quantum dot is 10nm, and the lasing wavelength of each quantum dot is 940 nm.

Step S04: growing an n-type DBR short-wave reflecting layer on the quantum dot short-wave laser emission unit;

the n-type DBR short-wave reflecting layer comprises 30-50 pairs of n-type doped GaNP/AlNP;

in a specific embodiment, an n-type DBR short-wave reflecting layer is grown on a quantum dot short-wave laser emission unit by adopting a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology and consists of n-type doped GaNP/AlNP, and the number of pairs of GaNP/AlNP is 40;

step S05: growing an upper surface n-type GaNP electrode contact layer on the n-type DBR short-wave reflecting layer;

the upper surface n-type electrode contact layer is made of n-type doped GaNP with the doping concentration of more than 5 x 10¹⁸cm^-3The thickness is 100-500 nm;

in one embodiment, an upper surface n-type GaNP electrode contact layer is grown on the n-type DBR short-wave reflecting layer by metal organic chemical vapor deposition or molecular beam epitaxy with a doping concentration of 1 × 10¹⁹cm^-3The thickness is 300 nm;

step S06: turning the double-side polished p-type single crystal Si substrate by 180 degrees to enable the lower surface of the substrate to face upwards;

after the short-wave laser emission module is completed, the p-type single crystal Si substrate is turned over, so that the lower surface faces upwards, and the subsequent preparation of the long-wave laser emission module can be carried out.

Step S07: forming a second p-type buffer layer on the lower surface of the single crystal Si substrate, wherein the material of the first p-type buffer layer is different from that of the second p-type buffer layer;

the second p-type buffer layer is made of p-type GaNAs, and the thickness of the second p-type buffer layer is 200-800 nm.

In one embodiment, a lower surface p-type GaNAs buffer layer is grown on the lower surface of the single crystal Si substrate by using a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology, and the thickness of the lower surface p-type GaNAs buffer layer is 400 nm.

Step S08: growing a p-type DBR long-wave reflecting layer on the second p-type buffer layer;

the p-type DBR long-wave reflecting layer comprises 30-50 pairs of p-type doped GaNAs/AlNAs;

in a specific embodiment, a p-type DBR long-wave reflecting layer is grown on the p-type GaNAs buffer layer on the lower surface by adopting a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology, and consists of p-type doped GaNAs/AlNAs, and the logarithm of the GaNAs/AlNAs is 40 pairs.

Step S09: growing a quantum dot long-wave laser emission unit on the p-type DBR long-wave reflection layer, wherein the quantum dot structure is undoped GaNAs/InAs/GaNAs;

the number of quantum dot layers in the quantum dot long-wave laser emission unit is 3-8, the diameter of the quantum dot is 5-20 nm, and the lasing wavelength of the quantum dot is 1300-1550 nm.

In a specific embodiment, a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology is adopted to grow a quantum dot long-wave laser emission unit on a p-type DBR long-wave reflecting layer, the quantum dot structure is undoped GaNAs/InAs/GaNAs, the number of quantum dot layers is 5, the diameter of each quantum dot is 10nm, and the lasing wavelength of each quantum dot is 1550 nm;

step S010: growing an n-type DBR long-wave reflecting layer on the quantum dot long-wave laser emission unit;

the n-type DBR long-wave reflecting layer comprises 20-40 pairs of n-type doped GaNAs/AlNAs;

in a specific embodiment, an n-type DBR long-wave reflecting layer is grown on a quantum dot long-wave laser emission unit by adopting a metal organic chemical vapor deposition technology or a molecular beam epitaxy technology, and consists of n-type doped GaNAs/AlNAs, and the logarithm of the GaNAs/AlNAs is 30 pairs.

Step S011: and growing a lower surface n-type GaNAs electrode contact layer on the n-type DBR long-wave reflecting layer.

The material of the lower surface n-type electrode contact layer is n-type doped GaNAs, and the doping concentration of the lower surface n-type electrode contact layer is more than 5 multiplied by 10¹⁸cm^-3The thickness is 100 to 500 nm.

In one embodiment, a Metal Organic Chemical Vapor Deposition (MOCVD) technique or molecular beam epitaxy (MOE) technique is used to grow a lower n-type GaNAs electrode contact layer on the n-type DBR long-wave reflective layer with a doping concentration of 1 × 10¹⁹cm^-3And the thickness is 300 nm.

In the technical scheme of the invention, the silicon-based double-sided vertical cavity surface emitting laser can be used for preparing a VCSEL device with coexisting short waves and long waves based on a monocrystalline silicon substrate, and is conveniently applied to systems with higher functional integration level, such as communication, sensing, intelligent control and the like. Meanwhile, the silicon-based double-sided vertical cavity surface emitting laser provided by the application can also adopt a crystalline silicon substrate to replace a GaAs, InP and other compound substrates, the manufacturing cost is reduced, meanwhile, the integration process of the laser and a silicon-based circuit system can be simplified, the application value is high, and the popularization is worth.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.