阅读说明：本技术 一种光电复合材料及其制备方法 (Photoelectric composite material and preparation method thereof ) 是由 李赟 于 2021-08-24 设计创作，主要内容包括：本发明公开一种光电复合材料及其制备方法,包括耐高温保护层和衬底基材,所述耐高温保护层安装在衬底基材的上端,所述耐高温保护层的上端设置有下欧姆接触层,所述下欧姆接触层的上端设置有下限制层,通过在传统的光电复合材料与衬底基材之间增加有新型的奶高端保护层,因为该光电复合材料主体为激光材料,而激光材料与衬底基材之间增加耐高温保护层能够在激光材料制作完成并正常使用时对衬底基材和激光材料都能够起到保护作用,耐高温保护层则具有优异的耐高温性能,在受到高温影响下该耐高温保护层能够保护激光材料与衬底基材之间不会产生分离的情况发生,从而能够增加整个激光材料在安装到衬底基材上后的使用寿命和使用稳定性。(The invention discloses a photoelectric composite material and a preparation method thereof, the photoelectric composite material comprises a high-temperature-resistant protective layer and a substrate base material, the high-temperature-resistant protective layer is arranged at the upper end of the substrate base material, a lower ohmic contact layer is arranged at the upper end of the high-temperature-resistant protective layer, a novel milk-high-end protective layer is added between the traditional photoelectric composite material and the substrate base material, because the main body of the photoelectric composite material is a laser material and the high-temperature-resistant protective layer added between the laser material and the substrate base material can play a role in protecting the substrate base material and the laser material when the laser material is manufactured and normally used, the high-temperature-resistant protective layer has excellent high-temperature resistance, and can protect the laser material and the substrate base material from being separated under the influence of high temperature, thereby being capable of increasing the service life and the service stability of the whole laser material after being arranged on the substrate base material.)

1. An optoelectronic composite material comprising a high temperature resistant protective layer (10) and a substrate base material (11), characterized in that: the upper end at substrate (11) is installed in high temperature resistant protective layer (10), the upper end of high temperature resistant protective layer (10) is provided with down ohmic contact layer (9), the upper end of ohmic contact layer (9) is provided with down limiting layer (8) down, the upper end of limiting layer (8) is provided with down waveguide layer (7) down, the upper end of waveguide layer (7) is provided with quantum dot layer (6) down, the upper end of quantum dot layer (6) is provided with cover layer (5), the upper end of cover layer (5) is provided with isolation layer (4), the upper end of isolation layer (4) is provided with waveguide layer (3), the upper end of going up waveguide layer (3) is provided with limiting layer (2) on, the upper end of limiting layer (2) on is provided with ohmic contact layer (1).

2. The preparation method of the photoelectric composite material is characterized by comprising the following steps of:

firstly, when a lower limiting layer (8) is manufactured on the upper end of a lower ohmic contact layer (9), growing n-type Si doped AIGaAs with the thickness of 1300nm-1800nm by an MOCVD method at 700-720 ℃, wherein the doping concentration is 10^17-10^18cm-3, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminum 2.6X 10-5mol/min, arsine 6.7X 10-3mol/min, silane 4.3X 10-7 mol/min-4.4X 10-6 mol/min;

secondly, when the lower waveguide layer (7) is manufactured at the upper end of the lower limiting layer (8), growing the unintentional doped AlGaAs with the thickness of 80nm to 100nm by using an MOCVD method at the temperature of 600 ℃ to 720 ℃, wherein the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminium 8.7X 10-6mol/min, arsine 6.7X 10-3 mol/min;

thirdly, when the quantum dot layer (6) is manufactured at the upper end of the lower waveguide layer (7), growing the unintentionally doped InAs quantum dot layer (6) by using an MOCVD method at 480-500 ℃, wherein the growth time is 55s, the V/III ratio is 5-15, and the flow of a growth source is as follows: 8.6 multiplied by 10 < -7 > mol/min of trimethyl indium and 4.9 multiplied by 10 < -6 > mol/min of arsine;

fourthly, when the cap layer (5) is manufactured on the upper end of the quantum dot layer (6), growing the 6-10 nm unintentionally doped GaAs cap layer (5) by utilizing an MOCVD method at 480-500 ℃, wherein the V/III ratio is 50-100, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3 mol/min;

fifthly, when the isolation layer (4) is manufactured at the upper end of the cover layer (5), growing 25-40 nm p-doped GaAs by an MOCVD method at 580-600 ℃, wherein the doping form is modulation doping, Be is doped at a position 25nm away from the InAs quantum dot layer, the doping concentration is 5 multiplied by 1017cm & lt-3 & gt, the V/III ratio is 50-100, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3 mol/min;

sixthly, when the upper waveguide layer (3) is manufactured at the upper end of the isolating layer (4), growing the unintentional doped AlGaAs with the thickness of 80nm to 100nm by using an MOCVD method at the temperature of 600 ℃ to 700 ℃, wherein the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminium 8.7X 10-6mol/min, arsine 6.7X 10-3 mol/min;

seventhly, when the upper limiting layer (2) is manufactured at the upper end of the upper waveguide layer (3), growing p-type doped AlGaAs with the thickness of 1300 nm-1500 nm by an MOCVD method at 700-720 ℃, wherein the doping concentration is 1017-1018 cm-3, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminum 2.6X 10-5mol/min, arsine 6.7X 10-3mol/min, diethyl zinc 9.2X 10-7 mol/min-9.2X 10-6 mol/min;

eighthly, when the upper ohmic contact layer (1) is manufactured at the upper end of the upper limiting layer (2), growing p-type heavily doped GaAs with the thickness of 150 nm-300 nm by using an MOCVD method at the temperature of 550-700 ℃, wherein the doping concentration is 1019-1020 cm-3, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3mol/min, diethyl zinc 3.7X 10-6 mol/min.

Technical Field

The invention belongs to the technical field related to photoelectric composite materials, and particularly relates to a photoelectric composite material and a preparation method thereof.

Background

The photoelectric material is used for manufacturing various photoelectric devices (mainly comprising various active and passive photoelectric sensor optical information processing and storage devices, optical communication and the like), mainly comprises infrared materials, laser materials, optical fiber materials, nonlinear optical materials and the like, the following mainly introduces the infrared materials, the laser materials and the application thereof in the military field, the laser materials convert various pumping (electricity, light and rays) energy into laser materials, the laser materials are mainly condensed state substances, mainly solid laser substances, the solid laser materials are divided into two types, one type is semiconductor laser materials mainly electrically excited, generally adopts a heterostructure, consists of semiconductor films and is manufactured by an epitaxial method and a vapor deposition method, the other type is a luminescent material which is converted into laser output after absorbing the energy of an optical pump by a discrete luminescence center, the materials use solid dielectrics as matrixes, it is classified into crystalline and amorphous glasses.

The prior photoelectric composite material technology has the following problems: the existing photoelectric composite material is particularly used after the laser material is manufactured and used, the laser material manufactured by compounding various materials is required to be manufactured on a substrate base material of monocrystalline silicon, after the laser material is installed and used through the substrate base material of the monocrystalline silicon, laser equipment can emit higher heat energy during working, the laser material and the substrate base material can be influenced by high temperature generated during working of the laser equipment, separation can be easily generated between the laser material and the substrate base material under the influence of the high temperature, and therefore the use stability and the service life of the laser material installed on the laser equipment can be influenced.

Disclosure of Invention

The invention aims to provide a photoelectric composite material and a preparation method thereof, and aims to solve the problems that after a laser material provided in the background technology is installed and used through a monocrystalline silicon substrate, laser equipment can emit high heat energy during working, the laser material and the substrate can be influenced by high temperature generated during working of the laser equipment, and the laser material and the substrate can be easily separated under the influence of the high temperature.

In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a photoelectric composite material, includes high temperature resistant protective layer and substrate, the upper end at the substrate is installed to the high temperature resistant protective layer, the upper end of high temperature resistant protective layer is provided with down ohmic contact layer, the upper end of ohmic contact layer is provided with down the restriction layer down, the upper end of restriction layer is provided with down the waveguide layer, the upper end of waveguide layer is provided with quantum dot layer down, the upper end on quantum dot layer is provided with the cap layer, the upper end of cap layer is provided with the isolation layer, the upper end of isolation layer is provided with the waveguide layer, the upper end of going up the waveguide layer is provided with the restriction layer, the upper end of restricting layer is provided with ohmic contact layer.

A preparation method of a photoelectric composite material comprises the following steps:

firstly, when a lower limiting layer is manufactured on the upper end of a lower ohmic contact layer, growing n-type Si doped AIGaAs with the thickness of 1300nm to 1800nm by an MOCVD method at 700 ℃ to 720 ℃, wherein the doping concentration is 10^17 to 10^18cm-3, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminium 2.6X 10-5mol/min, arsine 6.7X 10-3mol/min, silane 4.3X 10-7 mol/min-4.4X 10-6 mol/min.

Secondly, when a lower waveguide layer is manufactured at the upper end of the lower limiting layer, growing the unintentional doped AlGaAs with the thickness of 80nm to 100nm by using an MOCVD method at the temperature of 600 ℃ to 720 ℃, wherein the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminium 8.7X 10-6mol/min, arsine 6.7X 10-3 mol/min.

Thirdly, when a quantum dot layer is manufactured at the upper end of the lower waveguide layer, growing the unintentionally doped InAs quantum dot layer by using an MOCVD method at 480-500 ℃, wherein the growth time is 55s, the V/III ratio is 5-15, and the flow of a growth source is as follows: 8.6 multiplied by 10 < -7 > mol/min of trimethyl indium and 4.9 multiplied by 10 < -6 > mol/min of arsine.

Fourthly, when the cover layer is manufactured on the upper end of the quantum dot layer, growing the 6-10 nm unintentionally doped GaAs cover layer at 480-500 ℃ by using an MOCVD method, wherein the V/III ratio is 50-100, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3 mol/min.

Fifthly, when the isolation layer is manufactured on the upper end of the cover layer, growing 25-40 nm p-doped GaAs by an MOCVD method at 580-600 ℃, wherein the doping form is modulation doping, Be is doped at a position 25nm away from the InAs quantum dot layer, the doping concentration is 5 multiplied by 1017cm & lt-3 & gt, the V/III ratio is 50-100, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3 mol/min.

Sixthly, when the upper waveguide layer is manufactured at the upper end of the isolating layer, growing the unintentional doped AlGaAs with the thickness of 80nm to 100nm by using an MOCVD method at the temperature of 600 ℃ to 700 ℃, wherein the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminium 8.7X 10-6mol/min, arsine 6.7X 10-3 mol/min.

Seventhly, when the upper limiting layer is manufactured at the upper end of the upper waveguide layer, growing p-type doped AlGaAs with the thickness of 1300nm to 1500nm by using an MOCVD method at the temperature of 700 ℃ to 720 ℃, wherein the doping concentration is 1017 to 1018cm & lt-3 & gt, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminium 2.6X 10-5mol/min, arsine 6.7X 10-3mol/min, diethyl zinc 9.2X 10-7 mol/min-9.2X 10-6 mol/min.

Eighthly, when the upper ohmic contact layer is manufactured at the upper end of the upper limiting layer, growing 150 nm-300 nm thick p-type heavily doped GaAs by an MOCVD method at 550-700 ℃, wherein the doping concentration is 1019-1020 cm < -3 >, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3mol/min, diethyl zinc 3.7X 10-6 mol/min.

Compared with the prior art, the invention provides a photoelectric composite material and a preparation method thereof, and the photoelectric composite material has the following beneficial effects:

according to the invention, the novel milk-high-end protective layer is additionally arranged between the traditional photoelectric composite material and the substrate base material, the main body of the photoelectric composite material is a laser material, the high-temperature-resistant protective layer is additionally arranged between the laser material and the substrate base material, so that the substrate base material and the laser material can be protected when the laser material is manufactured and normally used, when the laser material is used in equipment related to laser, the laser material and the substrate base material can be influenced by high temperature generated during the operation of the laser equipment, the high-temperature-resistant protective layer has excellent high temperature resistance, and the high-temperature-resistant protective layer can protect the laser material and the substrate base material from being separated under the influence of high temperature, so that the service life and the use stability of the whole laser material after being installed on the substrate base material can be prolonged, and the high-temperature-resistant protective layer mainly comprises a super heat-resistant layer, The ultra-fine nano-periodic layer and the adhesion strength strengthening layer jointly form the ultra-fine heat-resistant layer with excellent heat resistance, the ultra-fine nano-periodic layer can increase the self strength of the whole high-temperature-resistant protective layer, the adhesion strength strengthening layer can increase the connection strength between the substrate base material and the laser material, and the ultra-heat-resistant layer can play a role in heat resistance and high temperature resistance under the influence of high-temperature factors, so that the condition that the whole high-temperature-resistant protective layer plays a role in high temperature resistance on the laser material and the substrate base material and can avoid layering between the laser material and the substrate base material through the strengthening connection effect of the adhesion strength strengthening layer is ensured, and the whole use stability and the service life of the whole photoelectric composite material can be increased.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention without limiting the invention in which:

FIG. 1 is a schematic structural diagram of a photoelectric composite material and a method for preparing the same according to the present invention;

in the figure: 1. an upper ohmic contact layer; 2. an upper confinement layer; 3. an upper waveguide layer; 4. an isolation layer; 5. a cap layer; 6. a quantum dot layer; 7. a lower waveguide layer; 8. a lower confinement layer; 9. a lower ohmic contact layer; 10. a high temperature resistant protective layer; 11. a substrate base material.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1, the present invention provides a technical solution: the utility model provides a photoelectric composite material, including high temperature resistant protective layer 10 and substrate 11, the upper end at substrate 11 is installed to high temperature resistant protective layer 10, the upper end of high temperature resistant protective layer 10 is provided with ohmic contact layer 9 down, the upper end of ohmic contact layer 9 is provided with lower limiting layer 8 down, the upper end of limiting layer 8 is provided with lower waveguide layer 7 down, the upper end of lower waveguide layer 7 is provided with quantum dot layer 6, the upper end of quantum dot layer 6 is provided with cap layer 5, the upper end of cap layer 5 is provided with isolation layer 4, the upper end of isolation layer 4 is provided with upper waveguide layer 3, the upper end of upper waveguide layer 3 is provided with upper limiting layer 2, the upper end of upper limiting layer 2 is provided with upper ohmic contact layer 1, photoelectric composite material's preparation method step does: firstly, when a lower limiting layer 8 is manufactured on the upper end of a lower ohmic contact layer 9, growing n-type Si doped AIGaAs with the thickness of 1300nm-1800nm by an MOCVD method at 700-720 ℃, wherein the doping concentration is 10^17-10^18cm-3, and the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminium 2.6X 10-5mol/min, arsine 6.7X 10-3mol/min, silane 4.3X 10-7 mol/min-4.4X 10-6mol/min, secondly, when the lower waveguide layer 7 is manufactured on the upper end of the lower limiting layer 8, the unintentional doping AlGaAs with the thickness of 80 nm-100 nm is grown by an MOCVD method at the temperature of 600 ℃ to 720 ℃, the growth source flow is as follows: trimethyl gallium 4.0 x 10 < -5 > mol/min, trimethyl aluminum 8.7 x 10 < -6 > mol/min, arsine 6.7 x 10 < -3 > mol/min, and when a quantum dot layer 6 is manufactured at the upper end of a lower waveguide layer 7, an unintentionally doped InAs quantum dot layer 6 is grown by an MOCVD method at 480-500 ℃, the growth time is 55s, the V/III ratio is 5-15, and the flow of a growth source is as follows: 8.6 multiplied by 10 < -7 > mol/min of trimethyl indium, 4.9 multiplied by 10 < -6 > mol/min of arsine, and four, when the cap layer 5 is manufactured on the upper end of the quantum dot layer 6, growing the 6 to 10nm unintentionally doped GaAs cap layer 5 by using an MOCVD method at 480 to 500 ℃, wherein the V/III ratio is 50 to 100, and the flow of a growth source is as follows: trimethyl gallium 4.0 x 10 < -5 > mol/min, arsine 2.7 x 10 < -3 > mol/min, fifthly, when the isolation layer 4 is manufactured at the upper end of the cover layer 5, growing 25-40 nm p-doped GaAs by using an MOCVD method at 580-600 ℃, wherein the doping form is modulation doping, Be is doped at a position 25nm away from the InAs quantum dot layer, the doping concentration is 5 x 1017cm < -3 >, the V/III ratio is 50-100, and the growth source flow is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3mol/min, six, when making the upper waveguide layer 3 on the upper end of the isolating layer 4, growing the unintentional doped AlGaAs with the thickness of 80nm to 100nm by using the MOCVD method at the temperature of 600 ℃ to 700 ℃, the flow of the growing source is as follows: trimethyl gallium 4.0 x 10-5mol/min, trimethyl aluminium 8.7 x 10-6mol/min, arsine 6.7 x 10-3mol/min, seven, when the upper limiting layer 2 is manufactured on the upper end of the upper waveguide layer 3, p-type doped AlGaAs with the thickness of 1300 nm-1500 nm is grown by an MOCVD method at the temperature of 700 ℃ -720 ℃, the doping concentration is 1017-1018 cm-3, the flow of a growth source is as follows: trimethyl gallium is 4.0 multiplied by 10 < -5 > mol/min, trimethyl aluminum is 2.6 multiplied by 10 < -5 > mol/min, arsine is 6.7 multiplied by 10 < -3 > mol/min, diethyl zinc is 9.2 multiplied by 10 < -7 > mol/min to 9.2 multiplied by 10 < -6 > mol/min, eight, when the upper end of the upper limiting layer 2 is manufactured with the ohmic contact layer 1, p-type heavily doped GaAs with the thickness of 150nm to 300nm is grown by an MOCVD method at the temperature of 550 ℃ to 700 ℃, the doping concentration is 1019 cm to 1020cm < -3 >, the flow of a growth source is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3mol/min, diethyl zinc 3.7X 10-6mol/min, and the high temperature resistant protective layer 10 is mainly composed of a super heat resistant layer, an ultra-fine nano periodic layer and an adhesion strength strengthening layer, the super heat-resistant layer has excellent heat resistance, the ultra-fine nano-periodic layer can increase the self-strength of the whole high-temperature-resistant protective layer 10, the adhesion strength strengthening layer can increase the connection strength between the substrate 11 and the laser material, under the influence of high temperature factors, the super heat-resistant layer can play a role in heat resistance and high temperature resistance, so that the situation that the whole high temperature-resistant protective layer 10 plays a role in high temperature resistance on the laser material and the substrate base material 11 and can avoid layering between the laser material and the substrate base material 11 through the reinforced connection effect of the adhesion strength reinforcing layer is ensured.

The working principle and the using process of the invention are as follows: when preparing the photoelectric composite material and compounding the photoelectric composite material on a substrate base material 11, firstly, the photoelectric composite material, namely a laser material, needs to be manufactured layer by layer from bottom to top, when manufacturing, firstly, a lower limiting layer 8 is manufactured at the upper end of a lower ohmic contact layer 9, n-type Si doped AIGaAs with the thickness of 1300nm-1800nm is grown by an MOCVD method at the temperature of 700-720 ℃, the doping concentration is 10^17-10^18cm-3, the source growth flow is as follows: trimethyl gallium 4.0X 10-5mol/min, trimethyl aluminium 2.6X 10-5mol/min, arsine 6.7X 10-3mol/min, silane 4.3X 10-7 mol/min-4.4X 10-6mol/min, then when the lower waveguide layer 7 is manufactured at the upper end of the lower limiting layer 8, the unintentional doped AlGaAs with the thickness of 80 nm-100 nm is grown by an MOCVD method at the temperature of 600 ℃ to 720 ℃, the growth source flow is as follows: trimethyl gallium 4.0 x 10 < -5 > mol/min, trimethyl aluminum 8.7 x 10 < -6 > mol/min and arsine 6.7 x 10 < -3 > mol/min, then when a quantum dot layer 6 is manufactured at the upper end of a lower waveguide layer 7, an unintentionally doped InAs quantum dot layer 6 is grown by an MOCVD method at 480-500 ℃, the growth time is 55s, the V/III ratio is 5-15, and the flow of a growth source is as follows: 8.6 multiplied by 10 < -7 > mol/min of trimethylindium and 4.9 multiplied by 10 < -6 > mol/min of arsine, and then when the cap layer 5 is manufactured at the upper end of the quantum dot layer 6, growing the 6 to 10nm unintentionally doped GaAs cap layer 5 by using an MOCVD method at 480 to 500 ℃, wherein the V/III ratio is 50 to 100, and the flow of a growth source is as follows: trimethyl gallium is 4.0 multiplied by 10 < -5 > mol/min, arsine is 2.7 multiplied by 10 < -3 > mol/min, then when the isolation layer 4 is manufactured at the upper end of the cover layer 5, 25nm to 40nm p-doped GaAs is grown by an MOCVD method at 580 ℃ to 600 ℃, the doping form is modulation doping, Be is doped at a position 25nm away from the InAs quantum dot layer, the doping concentration is 5 multiplied by 1017cm < -3 >, the V/III ratio is 50 to 100, and the growth source flow is as follows: trimethyl gallium 4.0X 10-5mol/min, arsine 2.7X 10-3mol/min, then when making the upper waveguide layer 3 on the upper end of the isolating layer 4, growing the unintentional doped AlGaAs with the thickness of 80 nm-100 nm by using the MOCVD method at 600 ℃ -700 ℃, the flow of the growing source is: trimethyl gallium 4.0 x 10-5mol/min, trimethyl aluminum 8.7 x 10-6mol/min, arsine 6.7 x 10-3mol/min, then when the upper limiting layer 2 is manufactured at the upper end of the upper waveguide layer 3, p-type doped AlGaAs with the thickness of 1300 nm-1500 nm is grown by an MOCVD method at the temperature of 700 ℃ -720 ℃, the doping concentration is 1017-1018 cm-3, and the flow of a growth source is as follows: trimethyl gallium is 4.0 multiplied by 10 < -5 > mol/min, trimethyl aluminum is 2.6 multiplied by 10 < -5 > mol/min, arsine is 6.7 multiplied by 10 < -3 > mol/min, diethyl zinc is 9.2 multiplied by 10 < -7 > mol/min to 9.2 multiplied by 10 < -6 > mol/min, then when an upper ohmic contact layer 1 is manufactured at the upper end of an upper limiting layer 2, p-type heavily doped GaAs with the thickness of 150nm to 300nm is grown by an MOCVD method at the temperature of 550 ℃ to 700 ℃, the doping concentration is 1019 cm to 1020cm < -3 >, the flow of a growth source is as follows: trimethyl gallium 4.0 x 10-5mol/min, arsine 2.7 x 10-3mol/min, diethyl zinc 3.7 x 10-6mol/min, and finally, the prepared laser material is prepared to the upper end of the substrate base material 11 through the high-temperature resistant protective layer 10 for normal use.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.