阅读说明：本技术 一种半导体激光器单巴封装方法 (Single-bar packaging method for semiconductor laser ) 是由 李伟 李波 李青民 孙翔 杨向荣 于 2020-12-30 设计创作，主要内容包括：本发明提供一种半导体激光器单巴封装方法,解决现有激光器单巴封装成本高、制造工艺复杂、体积大、使用范围较窄等问题。该半导体激光器单巴封装方法包括：步骤一、将负电极通过绝缘材料设置在铜热沉的上表面；步骤二、将正电极焊接在铜热沉的上表面；步骤三、将半导体激光器巴条的P面与钨铜热沉的上表面通过金锡合金焊接,将钨铜热沉的下表面与铜热沉的上表面通过金锡合金焊接；步骤四、将半导体激光器巴条的N面与负电极通过金线连接；步骤五、将铜热沉安装在散热器上。通过本发明方法对激光器单巴进行封装时,材料要求较低,对加工设备的要求也较低,同时,该方法简单易实现,使用范围较广。(The invention provides a single-bar packaging method of a semiconductor laser, which solves the problems of high single-bar packaging cost, complex manufacturing process, large volume, narrow application range and the like of the traditional laser. The single-bar packaging method of the semiconductor laser comprises the following steps: step one, arranging a negative electrode on the upper surface of a copper heat sink through an insulating material; welding the positive electrode on the upper surface of the copper heat sink; welding the P surface of the semiconductor laser bar and the upper surface of the tungsten-copper heat sink through gold-tin alloy, and welding the lower surface of the tungsten-copper heat sink and the upper surface of the copper heat sink through gold-tin alloy; connecting the N surface of the semiconductor laser bar with the negative electrode through a gold wire; and step five, mounting the copper heat sink on the radiator. When the method is used for packaging the laser single bar, the material requirement is lower, the requirement on processing equipment is lower, and meanwhile, the method is simple and easy to implement and wide in application range.)

1. A semiconductor laser single bar packaging method is characterized by comprising the following steps:

arranging a negative electrode on the upper surface of a copper heat sink through an insulating material, wherein the rear side surface of the negative electrode is flush with the rear side surface of the copper heat sink, the copper heat sink and the negative electrode are made of pure copper materials, and gold layers are plated on the surfaces of the copper heat sink and the negative electrode;

welding a positive electrode on the upper surface of the copper heat sink, wherein the positive electrode is made of pure copper and is plated with a gold layer;

welding the P surface of the semiconductor laser bar and the upper surface of the tungsten-copper heat sink through gold-tin alloy, welding the lower surface of the tungsten-copper heat sink and the upper surface of the copper heat sink through gold-tin alloy, wherein the tungsten-copper heat sink and the semiconductor laser bar are positioned on the front side of the negative electrode, and the surface of the tungsten-copper heat sink is plated with a gold layer;

connecting the N surface of the semiconductor laser bar with the negative electrode through a gold wire;

and step five, mounting the copper heat sink on the radiator.

2. The semiconductor laser single bar packaging method of claim 1, wherein: the third step specifically comprises the following steps:

3.1) arranging a gold-tin alloy solder sheet between the P surface of the semiconductor laser bar and the upper surface of the tungsten-copper heat sink, and arranging a gold-tin alloy solder sheet between the lower surface of the tungsten-copper heat sink and the upper surface of the copper heat sink;

3.2) heating the parts in the step 3.1) in a vacuum eutectic furnace at the temperature of 10-600 ℃, applying certain pressure on the N surface of the semiconductor laser bar, and welding all the parts into a whole.

3. The semiconductor laser single bar packaging method of claim 1, wherein: the third step specifically comprises the following steps:

3.1) plating a gold-tin alloy layer on the surface of the gold layer of the tungsten-copper heat sink;

3.2) welding the upper surface of the tungsten-copper heat sink with the P surface of the semiconductor laser bar, and welding the lower surface of the tungsten-copper heat sink with the upper surface of the copper heat sink at the welding temperature of 100-600 ℃.

4. A semiconductor laser single-bar packaging method according to claim 1, 2 or 3, characterized in that: in the third step, the mass ratio of tungsten to copper in the tungsten-copper heat sink is 1: 1-1: 9, the mass ratio of gold to tin in the gold-tin alloy is 1: 1-9: 1.

5. the semiconductor laser single bar packaging method of claim 4, wherein: in the first step to the third step, the thickness of the gold plating layer of the negative electrode, the positive electrode, the copper heat sink and the tungsten-copper heat sink is between 0.02 and 0.5 micron.

6. The semiconductor laser single bar packaging method of claim 5, wherein: in the first step, the insulating material is polyester imide, a resin fiber board or a polytetrafluoroethylene board, and the insulating material is connected with the negative electrode and the copper heat sink through PET, 502 glue or AB glue.

7. The semiconductor laser single bar packaging method of claim 6, wherein: and in the fourth step, the N surface of the semiconductor laser bar and the negative electrode are connected together by a gold wire through a gold wire bonder, and the gold wire is a conductive wire which is made of pure gold and has the diameter of 0.001-0.1 micrometer.

8. The semiconductor laser single bar packaging method of claim 7, wherein: and in the fourth step, gold wires between the N surface of the semiconductor laser bar and the negative electrode are arranged in a staggered manner in length and height.

9. The semiconductor laser single bar packaging method of claim 8, wherein: and fifthly, coating the heat sink with heat-conducting silicone grease, and then installing the heat sink on a radiator, wherein the radiator is an aluminum alloy radiator, and a plurality of radiating fins are arranged on the lower bottom surface of the aluminum alloy radiator.

10. A semiconductor laser single bar packaging method as claimed in claim 9, wherein: the upper end face of the radiator is provided with a groove, and the copper heat sink is fixed in the groove through a bolt or a pressure spring.

Technical Field

The invention belongs to the field of semiconductor lasers, and particularly relates to a single-bar packaging method of a semiconductor laser.

Background

The laser has high energy and large heat productivity, and the packaging mainly adopts finished product packaging heat sink. The current mature packaging modes mainly comprise COS packaging, TO packaging, C-mount packaging, CS packaging and the like, and the packaging has the advantages that: the product is mature, and the radiator can be used after being packaged. However, for a single bar package, the following problems exist: firstly, CS, C-mount and the like are adopted for packaging in the traditional single-bar packaging, in the packaging, a heat sink is processed by using a precision processing center, and a plurality of layers of metal are superposed and then welded, so that the packaging processing process is complex, and meanwhile, consumables such as double-sided metal aluminum nitride ceramics and the like used in the packaging are expensive, so that the packaging cost is higher; secondly, the single-bar packaging needs a machining center and the like for precision machining, so that the manufacturing process is complex and the manufacturing cost is high; secondly, the traditional single bar packaging adopts water cooling, corresponding water cooling equipment needs to be arranged for water cooling, and the method cannot be applied to handheld equipment, so that the application range of the handheld equipment is narrow; thirdly, the traditional single bus uses a water cooling mode, needs additional refrigeration equipment, and directly causes the volume of the whole equipment to be large, so that the equipment is inconvenient to carry.

Disclosure of Invention

The invention aims to solve the problems of high cost, complex manufacturing process, large volume, narrow application range and the like of the single-bar packaging of the conventional laser, and provides a single-bar packaging method of a semiconductor laser.

In order to achieve the above purpose, the technical scheme of the invention is as follows:

a semiconductor laser single bar packaging method comprises the following steps:

arranging a negative electrode on the upper surface of a copper heat sink through an insulating material, wherein the rear side surface of the negative electrode is flush with the rear side surface of the copper heat sink, the copper heat sink and the negative electrode are made of pure copper materials, and gold layers are plated on the surfaces of the copper heat sink and the negative electrode;

welding a positive electrode on the upper surface of the copper heat sink, wherein the positive electrode is made of pure copper and is plated with a gold layer;

welding the P surface of the semiconductor laser bar and the upper surface of the tungsten-copper heat sink through gold-tin alloy, welding the lower surface of the tungsten-copper heat sink and the upper surface of the copper heat sink through gold-tin alloy, wherein the tungsten-copper heat sink and the semiconductor laser bar are positioned on the front side of the negative electrode, and the surface of the tungsten-copper heat sink is plated with a gold layer;

connecting the N surface of the semiconductor laser bar with the negative electrode through a gold wire;

and step five, mounting the copper heat sink on the radiator.

Further, the third step specifically comprises the following steps:

3.1) arranging a gold-tin alloy solder sheet between the P surface of the semiconductor laser bar and the upper surface of the tungsten-copper heat sink, and arranging a gold-tin alloy solder sheet between the lower surface of the tungsten-copper heat sink and the upper surface of the copper heat sink;

3.2) heating the parts in the step 3.1) in a vacuum eutectic furnace at the temperature of 10-600 ℃, applying certain pressure on the N surface of the semiconductor laser bar, and welding all the parts into a whole.

Further, the third step specifically comprises the following steps:

3.1) plating a gold-tin alloy layer on the surface of the gold layer of the tungsten-copper heat sink;

3.2) welding the upper surface of the tungsten-copper heat sink with the P surface of the semiconductor laser bar, and welding the lower surface of the tungsten-copper heat sink with the upper surface of the copper heat sink at the welding temperature of 100-600 ℃.

Further, in the third step, the mass ratio of tungsten to copper in the tungsten-copper heat sink is 1: 1-1: 9, the mass ratio of gold to tin in the gold-tin alloy is 1: 1-9: 1.

further, in the step one to the step three, the thickness of the gold plating layer of the negative electrode, the positive electrode, the copper heat sink and the tungsten-copper heat sink is between 0.02 and 0.5 micron.

Further, in the first step, the insulating material is polyester imide, a resin fiber board or a polytetrafluoroethylene board, and the insulating material is connected with the negative electrode and the copper heat sink through PET, 502 glue or AB glue.

Further, in the fourth step, the N surface of the semiconductor laser bar and the negative electrode are connected together by a gold wire through a gold wire bonder, wherein the gold wire is a conductive wire which is made of pure gold and has a diameter of 0.001-0.1 micrometer.

Furthermore, in the fourth step, gold wires between the N surface of the semiconductor laser bar and the negative electrode are arranged in a staggered manner in length and height.

Further, in the fifth step, the copper heat sink is coated with heat-conducting silicone grease and then is mounted on the radiator, the radiator is an aluminum alloy radiator, and a plurality of radiating fins are arranged on the lower bottom surface of the aluminum alloy radiator.

Furthermore, a groove is formed in the upper end face of the radiator, and the copper heat sink is fixed in the groove through a bolt or a pressure spring.

Compared with the prior art, the technical scheme of the invention has the following beneficial effects:

1. the production cost is low. When the method is used for packaging the laser single bar, the requirement on materials is low, the materials used by each part are conventional materials, the input production equipment is simple, and complex processing devices such as a processing center and the like are not required to be arranged, so that the cost is low, and the production cost is integrally reduced.

2. The processing method is simple. The welding temperature used in the method is generally high, the vacuum pumping equipment has no high requirement, and the welding technology is only a general method, so that the integral processing method is simple and easy to realize.

3. The laser has large power and small volume. The method of the invention does not need to perform operations such as dissociation on the single-bar laser, so that the integral optical power of the laser is dozens of times higher than that of a single tube, and the requirement of higher power under smaller volume is met, thus the integral structure is small and exquisite, and the installation of handheld equipment is convenient.

4. The heat dissipation is convenient. The existing bar packaging technology uses a water cooling mode, the water cooling equipment is large in size, high in cost and inconvenient to carry, an aluminum alloy radiator can be directly adopted in the method, the aluminum alloy radiator is small in size, low in cost and convenient to carry, and the problem that the traditional bar packaging water cooling heat radiation cannot be carried is solved.

Drawings

FIG. 1 is a front view of a partially encapsulated semiconductor laser bar according to the present invention;

FIG. 2 is a top view of a partially encapsulated semiconductor laser bar according to the present invention;

FIG. 3 is a top view of the semiconductor laser bar of the present invention after being integrally packaged;

fig. 4 is a side view of the semiconductor laser bar of the present invention after it is integrally packaged.

Reference numerals: 1-negative electrode, 2-insulating material, 3-copper heat sink, 4-positive electrode, 5-semiconductor laser bar, 6-tungsten-copper heat sink, 7-gold wire, 8-radiator, 11-back side of negative electrode, 31-back side of copper heat sink, 81-radiating fin and 82-groove.

Detailed Description

The invention is described in further detail below with reference to the figures and specific embodiments.

The existing laser packaging generally adopts the industrial standard for packaging, but the packaging of the handheld high-power laser device has the problems of high cost, large volume, small heat dissipation power and the like, so that the requirement of the handheld laser device cannot be met. Based on the method, the material requirement is lower and the requirement on processing equipment is lower when the laser single bar is packaged by the method, so that the overall manufacturing cost is lower. Meanwhile, the method is simple and easy to implement, and has low requirements on welding, heating and vacuum. In addition, the semiconductor laser packaged by the method has large single-bar power and small volume, can meet the requirements of handheld laser equipment and the packaging requirements of other high-power and small-volume equipment devices, and has a wide application range.

As shown in fig. 1 to 4, when the single-bar package method of the semiconductor laser of the present invention is used for packaging, firstly, the negative electrode 1 is adhered to the copper heat sink 3 after adding an insulating layer, secondly, the positive electrode 4 is welded to the copper heat sink 3, secondly, the semiconductor laser bar is welded to the tungsten-copper heat sink 6, the tungsten-copper heat sink 6 is welded to the copper heat sink 3, and finally, the semiconductor laser is integrally mounted on the heat sink 8 after the welding is completed.

The single-bar packaging method of the semiconductor laser specifically comprises the following steps:

step one, arranging a negative electrode 1 on the upper surface of a copper heat sink 3 through an insulating material 2, wherein the rear side surface 11 of the negative electrode is flush with the rear side surface 31 of the copper heat sink, namely the rear side surface 11 of the negative electrode and the rear side surface 31 of the copper heat sink are on the same plane, and the arrangement of the positions enables a space for a gold wire 7 of a subsequent electrode to be more convenient;

in the step, a copper heat sink 3 and a negative electrode 1 are made of pure copper materials, gold layers are plated on the surfaces of the pure copper materials, an insulating material 2 is arranged between the negative electrode 1 and the copper heat sink 3, then the negative electrode 1 and the copper heat sink 3 are respectively bonded with two surfaces of the insulating material 2, the insulating material 2 can be specifically made of polyester imide, resin fiber composite materials, polytetrafluoroethylene or plastics and other insulating materials, the bonding is performed by using 502 glue such as AB glue or by using a PET (polyethylene terephthalate) film, and the bonding temperature is 50-500 ℃;

welding a positive electrode 4 on the upper surface of the copper heat sink 3, wherein the positive electrode 4 is made of pure copper and is plated with a gold layer;

in the step, a gold-tin alloy solder sheet is used for welding, and the mass ratio of gold to tin is as follows: 9: 1 to 1: 1, welding temperature is 100-600 ℃;

welding the P surface of the semiconductor laser bar 5 and the upper surface of the tungsten-copper heat sink 6 through gold-tin alloy, welding the lower surface of the tungsten-copper heat sink 6 and the upper surface of the copper heat sink 3 through gold-tin alloy, wherein the tungsten-copper heat sink 6 and the semiconductor laser bar 5 are positioned on the front side of the negative electrode 1, and the surface of the tungsten-copper heat sink 6 is plated with a gold layer;

in the step, the semiconductor laser bar 5, the tungsten-copper heat sink 6 and the copper heat sink 3 can be connected in the following two ways;

when the tungsten-copper heat sink 6 is only plated with the gold layer, the tungsten-copper heat sink 6 is welded by using a gold-tin alloy solder sheet, and the welding layers are respectively as follows: the laser comprises a semiconductor laser bar 5, a gold-tin alloy solder sheet, a tungsten-copper heat sink 6, a gold-tin alloy solder sheet and a copper heat sink 3; at the moment, the N surface of the semiconductor laser bar 5 faces upwards, the P surface is connected with a gold-tin alloy solder sheet, the lower surface of the gold-tin alloy solder sheet is connected with one surface of a tungsten-copper heat sink 6, the other surface of the tungsten-copper heat sink 6 is combined with the upper surface of the copper heat sink 3 through the gold-tin alloy solder sheet, the whole body is heated in a vacuum eutectic furnace at the temperature of 100-600 ℃, certain pressure is applied to the N surface of the semiconductor laser bar 5, and all the parts are welded into a whole body;

when the tungsten copper heat sink 6 is plated with gold and then plated with the gold-tin alloy, welding layers are respectively as follows: the method comprises the following steps that a semiconductor laser bar 5, a tungsten-copper heat sink 6 and a copper heat sink 3 are adopted, one surface of the tungsten-copper heat sink 6 is welded with the P surface of the semiconductor laser bar 5, the other surface of the tungsten-copper heat sink 6 is welded with the copper heat sink 3, and the welding temperature is 100-600 ℃;

connecting the N surface of the semiconductor laser bar 5 with the negative electrode 1 through a gold wire 7;

in the step, the N surface of the semiconductor laser bar 5 and the negative electrode 1 are connected together by a gold wire 7 through a gold wire bonder, and the gold wire 7 is a conductive wire which is made of pure gold and has the diameter of 0.001-0.1 micron; meanwhile, the gold wires 7 between the N surface of the semiconductor laser bar 5 and the negative electrode 1 can be arranged to be staggered in length and height, so that more gold wires 7 can be drilled in a smaller space, larger current can be carried, and the gold wires 7 are prevented from being burnt by large current flowing in the later period;

fifthly, mounting the copper heat sink 3 on the radiator 8;

in the step, the copper heat sink 3 is coated with heat-conducting silicone grease and then is installed on the radiator 8, the radiator 8 is an aluminum alloy radiator, the radiator 8 can be a tooth-shaped radiator, the appearance shape can be square, round or other polygons, the upper end face of the radiator 8 is provided with a groove 82, when the radiator is installed, the contact surface of the packaged copper heat sink 3 and the radiator 8 is coated with the heat-conducting silicone grease, the copper heat sink 3 is installed in the groove 82 through bolts or pressure springs, and the lower bottom face of the aluminum alloy radiator 8 is provided with a plurality of radiating fins 81 to achieve heat dissipation.

In the semiconductor laser single-bar packaging method, the positive electrode 4, the negative electrode 1 and the copper heat sink 3 are all made of pure copper materials, pure gold layers are plated on the surfaces of the pure copper materials, the thickness of each gold layer is 0.02-0.5 microns, the surface of the tungsten copper heat sink 6 is also plated with the pure gold layers, the thickness of each gold layer is 0.02-0.5 microns, and the thickness of each gold layer is too thin and the welding is not firm, and the thickness of each gold layer is too thick and the cost is too high.

In the single-bar packaging method of the semiconductor laser, the mass ratio of tungsten to copper in the tungsten-copper heat sink is 1: 1-1: 9, the proportion of tungsten and copper directly influences the thermal expansion coefficient of the tungsten-copper alloy, the performance of the laser bar cannot be influenced only if the thermal expansion coefficient of tungsten-copper heat sink is the same as that of the laser bar, and experimental data prove that the mass ratio of tungsten to copper is most appropriate in the proportion. Meanwhile, the mass ratio of gold to tin in the gold-tin alloy layer or the gold-tin alloy solder sheet is 1: 1 to 9: 1, the mass ratio of gold to tin is in the proportion, the welding quality is good, and the welding temperature cannot damage the laser bars.

Compared with the existing packaging method, the single-bar packaging method of the semiconductor laser has the following characteristics:

when the method is used for packaging the laser single bar, materials of all parts are conventional materials existing in the market, the material cost is low, the input production equipment is relatively simple, the production cost is low, and compared with the input of the existing laser industry, the cost is very low and the overall production cost is low.

The welding temperature used in the method is generally high, the vacuum pumping equipment has no high requirement, and the welding technology is only a general method, so that the integral processing method is simple and easy to realize.

The method directly uses the bar laser, does not need to dissociate the bar into single tubes for use, reduces the dissociation cost, and ensures that the overall optical power of the bar laser is dozens of times higher than that of the single tubes, so that the power of the laser is higher, and the requirements of handheld equipment are met. The high-power laser packaged by the method has a small overall structure, is convenient for the installation and use of handheld equipment, and has a wide application range. In addition, the existing bar packaging mode adopts a water cooling mode, the water cooling equipment is large in size, high in cost and inconvenient to carry, and the bar packaging method cannot be used for handheld equipment.