Semiconductor laser drive circuit, multi-line laser and multi-line laser radar

文档序号:570970 发布日期:2021-05-18 浏览:10次 中文

阅读说明:本技术 半导体激光器驱动电路、多线激光器及多线激光雷达 (Semiconductor laser drive circuit, multi-line laser and multi-line laser radar ) 是由 张厚博 王晓燕 于 2020-12-31 设计创作,主要内容包括:本发明适用于激光雷达技术领域,提供了一种半导体激光器驱动电路、多线激光器及多线激光雷达,该半导体激光器驱动电路包括:至少两个充电单元和至少一个放电单元;至少两个充电单元中每个充电单元的输入端用于连接电源,至少两个充电单元中每个充电单元的输出端连接后与至少一个放电单元连接;至少两个充电单元用于按照预设频率为至少一个放电单元充电,以使至少一个放电单元的放电频率满足要求。本发明通过至少两个充电单元按照预设频率为至少一个放电单元充电,可以缩短至少一个放电单元多次充电的时间间隔,使至少一个放电单元的放电频率满足高重频的要求,进而使基于本发明的多线激光器可以满足激光雷达系统的探测精度要求。(The invention is suitable for the technical field of laser radars, and provides a semiconductor laser driving circuit, a multi-line laser and a multi-line laser radar, wherein the semiconductor laser driving circuit comprises: at least two charging units and at least one discharging unit; the input end of each of the at least two charging units is used for being connected with a power supply, and the output end of each of the at least two charging units is connected with at least one discharging unit; the at least two charging units are used for charging the at least one discharging unit according to a preset frequency, so that the discharging frequency of the at least one discharging unit meets the requirement. According to the invention, at least one discharging unit is charged by at least two charging units according to the preset frequency, so that the time interval of multiple charging of at least one discharging unit can be shortened, the discharging frequency of at least one discharging unit meets the requirement of high repetition frequency, and further, the multi-line laser based on the invention can meet the detection precision requirement of a laser radar system.)

1. A semiconductor laser driving circuit, comprising: at least two charging units and at least one discharging unit;

the input end of each of the at least two charging units is used for being connected with a power supply, and the output end of each of the at least two charging units is connected with the at least one discharging unit;

the at least two charging units are used for charging the at least one discharging unit according to a preset frequency, so that the discharging frequency of the at least one discharging unit meets requirements.

2. The semiconductor laser driving circuit according to claim 1, wherein when the number of the discharge cells is at least two, the at least two discharge cells are connected in parallel.

3. The semiconductor laser driving circuit according to claim 1 or 2, wherein the charging unit includes: an inductor L1, a diode D1 and a switching tube Q1;

one end of the inductor L1 is used for connecting a power supply, and the other end of the inductor L1 is respectively connected with the drain of the switching tube Q1 and the anode of the diode D1;

the grid electrode of the switch tube Q1 is used for inputting a first charging driving signal, and the source electrode of the switch tube Q1 is grounded;

the cathode of the diode D1 serves as the output of the charging unit.

4. The semiconductor laser driving circuit according to claim 1 or 2, wherein the discharge unit includes: the laser chip LD1, the capacitor C1 and the switching tube Q11;

the positive electrode of the laser chip LD1 is connected with one end of the capacitor C1 and then connected with the output end of each charging unit of the at least two charging units, and the negative electrode of the laser chip LD1 is connected with the drain electrode of the switching tube Q11;

the other end of the capacitor C1 is connected with the source electrode of the switching tube Q11 and then grounded;

the gate of the switching tube Q11 is used for inputting a first discharge driving signal.

5. The semiconductor laser driving circuit according to claim 4,

the laser chip LD1 comprises an optical fiber and a laser;

the diameter of the optical fiber is less than or equal to 200 μm, and the optical fiber is used for performing optical angle compression on laser emitted by the laser.

6. A multi-line laser comprising at least one semiconductor laser driving circuit according to any one of claims 1 to 5, a PCB board, a heat radiating pad and a metal heat radiating member;

the semiconductor laser driving circuit is integrated on one surface of the PCB, a radiating pad is arranged on the other surface of the PCB, and the metal radiating piece is arranged on the radiating pad.

7. The multi-wire laser of claim 6,

when the semiconductor laser driving circuit includes one discharge unit, the multi-line laser includes at least two semiconductor laser driving circuits.

8. The multi-line laser according to claim 6 or 7, wherein when at least two laser chips are included in said at least one semiconductor laser driving circuit, a pitch between adjacent two laser chips is 2.5mm to 3.0 mm.

9. The multi-line laser of claim 8, wherein when the at least two laser chips are integrated on one side of the PCB, the at least two laser chips are disposed along a first edge of the PCB, the setting angle of each laser chip is 1 ° to 15 °, the setting angle is an included angle between a predetermined connection line and the first edge, and the predetermined connection line is a connection line between the corresponding laser chip and any one of the first edges.

10. Multiline lidar characterized in that the multiline lidar comprises a multiline laser according to any one of claims 6 to 9.

Technical Field

The invention belongs to the technical field of laser radars, and particularly relates to a semiconductor laser driving circuit, a multi-line laser and a multi-line laser radar.

Background

The single-line pulse semiconductor laser has the characteristics of small volume, low power consumption, high reliability and the like, and is widely applied to military fields such as civil distance measurement, civil detection, laser fuze, laser guidance and the like, and the multi-line integrated narrow-pulse semiconductor laser module also has important functions in the fields such as laser radar, multi-target detection and tracking and the like.

With the development of the technology, higher and higher requirements are provided for the detection distance and the detection precision of the laser fuse and the laser radar, and further higher requirements are provided for a single-line pulse semiconductor laser or a multi-line integrated narrow pulse semiconductor laser. Therefore, how to make a single-line pulse semiconductor laser or a multi-line integrated narrow-pulse semiconductor laser have narrower pulses, higher optical power and finer control is very important to improve the detection accuracy of the laser radar system.

Disclosure of Invention

In view of this, embodiments of the present invention provide a semiconductor laser driving circuit, a multi-line laser and a multi-line laser radar, so as to solve the problem that a single-line pulse semiconductor laser or a multi-line integrated narrow pulse semiconductor laser in the prior art cannot meet the requirement of a laser radar system for high detection accuracy.

A first aspect of an embodiment of the present invention provides a semiconductor laser driving circuit, including:

at least two charging units and at least one discharging unit;

the input end of each of the at least two charging units is used for being connected with a power supply, and the output end of each of the at least two charging units is connected with the at least one discharging unit;

the at least two charging units are used for charging the at least one discharging unit according to a preset frequency, so that the discharging frequency of the at least one discharging unit meets requirements.

A second aspect of an embodiment of the present invention provides a multi-line laser including at least one semiconductor laser driving circuit described in any one of the above, a PCB board, a heat dissipation pad, and a metal heat dissipation member; the semiconductor laser driving circuit is integrated on one surface of the PCB, a radiating pad is arranged on the other surface of the PCB, and the metal radiating piece is arranged on the radiating pad.

A third aspect of embodiments of the present invention provides a multiline lidar including a multiline laser as defined in any one of the above.

Compared with the prior art, the embodiment of the invention has the following beneficial effects: the semiconductor laser driving circuit is formed by at least two charging units and at least one discharging unit, at least one discharging unit is charged by the at least two charging units according to the preset frequency, when one charging unit charges the at least one discharging unit, the other at least one charging unit charges simultaneously, and then after the discharging of the at least one discharging unit is completed, the other at least one charging unit charges the at least one discharging unit, so that the time interval of the multiple charging of the at least one discharging unit is shortened, the discharging frequency of the at least one discharging unit meets the requirement of high repetition frequency, the multi-line laser based on the laser driving circuit can realize finer control over a laser radar system, and further meets the detection accuracy requirement of the laser radar system.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.

Fig. 1 is a schematic structural diagram of a semiconductor laser driving circuit according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of an assembly of laser chips provided by an embodiment of the present invention;

FIG. 3 is a schematic assembly diagram of a multi-line laser provided by an embodiment of the present invention;

fig. 4 is a schematic arrangement diagram of laser chips according to an embodiment of the present invention.

Detailed Description

In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.

In order to explain the technical means of the present invention, the following description will be given by way of specific examples.

Fig. 1 is a schematic structural diagram of a semiconductor laser driving circuit according to an embodiment of the present invention, which is described in detail as follows. The semiconductor laser driving circuit 10 includes at least two charging units 111 and 112, and at least one discharging unit 121.

The input end of each charging unit in the at least two charging units is used for being connected with a power supply VCC, and the output end of each charging unit in the at least two charging units is connected with at least one discharging unit after being connected. The at least two charging units are used for charging the at least one discharging unit according to a preset frequency, so that the discharging frequency of the at least one discharging unit meets the requirement.

According to the embodiment of the invention, the semiconductor laser driving circuit is formed by at least two charging units and at least one discharging unit, at least one discharging unit is charged by at least two charging units according to the preset frequency, so that when one charging unit charges at least one discharging unit, at least one other charging unit charges simultaneously, and after at least one discharging unit finishes discharging, at least one discharging unit is charged by at least one other charging unit, the time interval of multiple charging of at least one discharging unit is shortened, and further the discharging frequency of at least one discharging unit meets the requirement of high repetition frequency, so that the multi-line laser based on the invention can realize finer control on a laser radar system, and further meets the detection accuracy requirement of the laser radar system.

Optionally, when the number of the discharge units is at least two, the at least two discharge units are connected in parallel.

When the number of the discharging units is at least two, the at least two discharging units are connected in parallel, and the at least two discharging units are connected in parallel and then connected with the output end of each charging unit of the at least two charging units. So that the at least two charging units can charge the at least two discharging units according to the preset frequency, and the discharging frequency of the at least two discharging units meets the requirement.

Optionally, the charging unit 111 may include: inductor L1, diode D1 and switching tube Q1.

One end of an inductor L1 is used for connecting a power supply VCC, and the other end of an inductor L1 is respectively connected with the drain of the switching tube Q1 and the anode of the diode D1; the gate of the switching tube Q1 is used for inputting the first charging driving signal T1, and the source of the switching tube Q1 is grounded; the cathode of the diode D1 serves as the output terminal of the charging unit 111.

Also, the charging unit 112 may include: inductor L2, diode D2 and switching tube Q2.

One end of an inductor L2 is used for connecting a power supply VCC, and the other end of an inductor L2 is respectively connected with the drain of the switching tube Q2 and the anode of the diode D2; the gate of the switching tube Q2 is used for inputting the second charging driving signal T2, and the source of the switching tube Q2 is grounded; the cathode of the diode D2 serves as the output terminal of the charging unit 112.

Alternatively, the discharge unit 121 may include: the laser chip LD1, the capacitor C1 and the switch tube Q11.

The positive electrode of the laser chip LD1 is connected with one end of the capacitor C1 and then connected with the output end of each charging unit of the at least two charging units, and the negative electrode of the laser chip LD1 is connected with the drain electrode of the switching tube Q11; the other end of the capacitor C1 is connected with the source electrode of the switching tube Q11 and then grounded; the gate of the switching tube Q11 is used for inputting the first discharge driving signal T11.

In the present embodiment, when the semiconductor laser driving circuit includes three or more charging units, the structure of each charging unit is the same as that of the charging unit 111 and the charging unit 112. When the semiconductor laser driving circuit includes two or more discharge cells, the structure of each discharge cell is the same as that of the discharge cell 121.

In this embodiment, when the first charging driving signal T1 is at a high level, the switching tube Q1 is turned on, the inductor L1 stores energy, when the first charging driving signal T1 is at a low level, the switching tube Q1 is turned off, the energy stored in the inductor L1 is charged into the capacitor C1 through the diode D1, the capacitor C1 stores energy, and when the first discharging driving signal T11 is at a high level, the energy stored in the capacitor C1 is discharged into the laser chip LD1 through the switching tube Q11, so as to generate a narrow pulse current, thereby realizing narrow pulse laser output.

Similarly, when the second charging driving signal T2 is at a high level, the switching tube Q2 is turned on, the inductor L2 stores energy, when the second charging driving signal T2 is at a low level, the switching tube Q2 is turned off, the energy stored in the inductor L2 is charged into the capacitor C1 through the diode D2, the capacitor C1 stores energy, and when the first discharging driving signal T11 is at a high level, the energy stored in the capacitor C1 is discharged into the laser chip LD1 through the switching tube Q11, so as to generate a narrow pulse current, thereby realizing narrow pulse laser output.

In the embodiment, at least two charging units, namely at least two paths of inductors are used for storing energy, and a multi-inductor intermittent charging and energy compression mode is adopted, so that when the energy stored in the inductor L1 is transferred, the inductor L2 can store energy in advance, and the time interval of charging the capacitor C1 for multiple times is shortened. Therefore, the short-interval multi-pulse laser emission of the pulse semiconductor laser is realized, the requirements of high repetition frequency and narrow pulse are met, and the detection precision requirement of the laser radar system with the semiconductor laser driving circuit as the light source is met.

For example, the first charging driving signal T1 and the second charging driving signal T2 … … and the nth charging driving signal Tn of the present embodiment may be generated by a switching tube driving chip, and similarly, the first discharging driving signal T11 and the second discharging driving signal T12 … … and the nth discharging driving signal T1n may also be generated by a switching tube driving chip, when the semiconductor laser driving circuit of the present embodiment is used as a light source of a laser radar system, the frequencies of the first charging driving signal T1 and the second charging driving signal T2 … … and the frequency of the nth charging driving signal Tn of the first discharging driving signal T11 and the second discharging driving signal T12 … … and the nth discharging driving signal T1n may be designed so that the overall discharging frequency formed by at least one discharging unit meets the requirement of the operating frequency of the laser radar system.

In this embodiment, the energy storage of each charging unit in the at least two charging units can be controlled, so as to control the energy charged by each charging unit for the at least one discharging unit, so that when the at least one discharging unit discharges according to the energy storage of different charging units, the laser with different amplitudes can be emitted, and the laser radar system using the semiconductor laser driving circuit of this embodiment as the light source has specific codes, thereby avoiding the problems of easy misidentification and poor anti-interference capability when different laser radars work simultaneously.

Alternatively, referring to fig. 2, the laser chip LD1 may include an optical fiber and a laser.

The optical fiber with the diameter not more than 200 mu m is adopted for optical angle compression, and the optical curing glue with low shrinkage rate is adopted for optical fiber fixation, so that the stability of the laser core in a complex environment is ensured.

As still another embodiment of the present invention, referring to fig. 3, the present invention further includes a multi-line laser including at least one semiconductor laser driving circuit, a PCB board, a heat dissipation pad, and a metal heat dissipation member in the above-described embodiment.

The semiconductor laser driving circuit is integrated on one surface of the PCB, the other surface of the PCB is provided with a heat dissipation pad, and the metal heat dissipation piece is arranged on the heat dissipation pad.

When the multi-line laser of the present embodiment is integrally packaged, the laser chip, the at least one semiconductor laser driving circuit, the PCB, the heat dissipation pad, and the metal heat dissipation member in the semiconductor laser driving circuit are sequentially and uniformly packaged. At least one semiconductor laser drive circuit is integrated in one side of PCB board, and the another side of PCB board sets up large tracts of land heat dissipation pad, sets up on the heat dissipation pad the metal heat dissipation piece, heat dissipation pad and metal heat dissipation piece closely laminate, because the most heat that produces among the multi-line laser is switch tube and diode, the heat all concentrates on the GND pad, consequently adopts large tracts of land GND pad as heat dissipation channel to closely laminate with the metal heat dissipation piece, adopt conduction heat dissipation to realize high repetition frequency light source index.

In the laser chip assembling process, a high-precision chip mounter is used for operation, and assembling angle precision is guaranteed. The temperature gradient of the assembly can be set when the laser chip assembly, the semiconductor laser driving circuit assembly and the whole assembly are assembled.

Alternatively, when the semiconductor laser driving circuit includes one discharge unit, the multi-line laser includes at least two semiconductor laser driving circuits.

When the semiconductor laser driving circuit comprises a discharge unit, only one laser chip is arranged in the formed multi-line laser line, so that at least two semiconductor laser driving circuits are needed to form the multi-line laser.

For example, when the multi-line laser includes one semiconductor laser driving circuit, the semiconductor laser driving circuit may include four discharging units, when the multi-line laser includes two semiconductor laser driving circuits, the semiconductor laser driving circuit may include two discharging units, and specifically, the multi-line laser may include several semiconductor laser driving circuits according to the wiring harness of the multi-line laser that is required to be implemented, and the semiconductor laser driving circuit includes several discharging units.

In this embodiment, can obtain the multi-thread laser according to the unit free combination that discharges among semiconductor laser drive circuit and the semiconductor laser drive circuit, make the structure of multi-thread laser more nimble, and then when making multi-thread laser radar system based on the multi-thread laser, reduce the cost of manufacture and the debugging degree of difficulty of multi-thread laser radar, be favorable to reducing the cost of radar complete machine, improve the productivity of radar complete machine.

Optionally, referring to fig. 4, when at least two laser chips are included in at least one semiconductor laser driving circuit, a distance between two adjacent laser chips is 2.5mm to 3.0 mm.

The laser device comprises a PCB, at least two laser chips, a preset connecting line and a connecting line, wherein the at least two laser chips are integrated on one surface of the PCB, the at least two laser chips can be arranged along a first edge of the PCB, the arrangement angle of each laser chip is 1-15 degrees, the arrangement angle is an included angle between the preset connecting line and the first edge, and the preset connecting line is a connecting line between the corresponding laser chip and any one end of the first edge.

The setting angles of the two outermost laser chips of the PCB can be 1-3 degrees, the laser chips are arranged according to the arrangement structure of the embodiment, the coverage area of the laser chips is large, the irradiation range of 30 degrees is realized, and the spatial resolution of the multi-line laser radar system is improved.

As a further embodiment of the invention, the invention also includes a multiline lidar including the multiline laser of any one of the above embodiments and having the same advantageous effects as the multiline laser of any one of the above embodiments.

In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.

The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.

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