阅读说明：本技术 一种低功率半导体元器件及其基本电路 (Low-power semiconductor component and basic circuit thereof ) 是由 陈博 赵浩 张静 黎载红 于 2020-12-31 设计创作，主要内容包括：本发明公开了一种低功率半导体元器件及其基本电路,包括半导体基板,半导体基板,具有大致矩形状的主面,所述主面具有第一方向的第一边以及与所述第一方向交叉的第二方向的第二边,所述沟槽硅化物层至少部分嵌入所述半导体衬底,其电气连接且接触于所述沟槽硅化物层,其电气连接至所述第一与第二晶体管的一个的栅极以及电气连接至所述第一区域互连层,由一个或者多个晶体管复合而成的大功率发射极跟随方式的晶体管组合,采用晶体管组合能再满足大电流的要求下又能够提供较低的发射极与集电机电压差,由此带来进一步降低供电电源电压的可能。(The invention discloses a low-power semiconductor component and a basic circuit thereof, comprising a semiconductor substrate, wherein the semiconductor substrate is provided with a roughly rectangular main surface, the main surface is provided with a first side in a first direction and a second side in a second direction which is crossed with the first direction, a groove silicide layer is at least partially embedded in the semiconductor substrate, is electrically connected with and is in contact with the groove silicide layer, is electrically connected with a grid of one of a first transistor and a second transistor and is electrically connected with a first region interconnection layer, and a transistor combination of a high-power emitter following mode formed by compounding one or more transistors can provide lower voltage difference between an emitter and a collector under the condition that the transistor combination can meet the requirement of large current, thereby further reducing the voltage of a power supply.)

1. A low power semiconductor device and its basic circuit, including a semiconductor substrate having a substantially rectangular main surface having a first side in a first direction and a second side in a second direction intersecting the first direction, a first transistor and a second transistor formed on the semiconductor substrate, the transistors each including a source, a drain, and a gate, a trench silicide layer electrically connecting one of the source or the source of the first transistor to one of the source or the drain of the second transistor, characterized in that: the trench silicide layer is at least partially embedded in the semiconductor substrate, a first local interconnect layer electrically connected to and in contact with the trench silicide layer, and a second local interconnect layer electrically connected to a gate of one of the first and second transistors and electrically connected to the first local interconnect layer.

2. A low power semiconductor component and its basic circuit as claimed in claim 1, characterized in that: the first local interconnect layer extends between a first end and a second end, and wherein the second local interconnect layer is at a midpoint between the first and second ends of the first local interconnect layer.

3. A low power semiconductor component and its basic circuit as claimed in claim 1, characterized in that: the gate of the first transistor extends linearly with the gate of the second transistor.

4. A low power semiconductor component and its basic circuit as claimed in claim 3, characterized in that: the trench silicide layer is disposed on one side of the gates of the first and second transistors.

5. A low power semiconductor component and its basic circuit as claimed in claim 1, characterized in that: the first local interconnect layer and the second local interconnect layer each comprise tungsten.

6. A low power semiconductor component and its basic circuit as claimed in claim 1, characterized in that: the first and second local interconnect layers each comprise copper.

7. A low power semiconductor component and its basic circuit as claimed in claim 1, characterized in that: the trench silicide layer electrically connects the drain of the first transistor to the drain of the second transistor.

Technical Field

The invention relates to the technical field of semiconductor equipment, in particular to a low-power semiconductor component and a basic circuit thereof.

Background

The linear power supply is mainly applied to the application occasions with low requirements on heat generation and efficiency, or the situations with low requirements on cost and short design period, the linear power supply is of a voltage reduction type, namely the input voltage is higher than the designed output voltage, the switching power supply has higher efficiency and flexibility than the linear power supply, compared with the same output power, a radiator of the switching power supply is much smaller, but the switching power supply has high cost and needs a longer development period.

With the development of diode lasers, the application fields of the diode lasers are more and more extensive, but the electrical properties of the semiconductor lasers and the semiconductor diodes are similar, and the semiconductor lasers and the semiconductor diodes belong to the characteristics that the constant current driving electrical characteristics have no essential difference with those of common silicon diodes, but because of the characteristics of large current and low voltage, the common devices are difficult to drive the laser diodes with high efficiency, and meanwhile, the semiconductor lasers are easy to be damaged or have shortened service lives due to factors such as high temperature, static electricity, overcurrent and the like.

Disclosure of Invention

The present invention is directed to a low power semiconductor device and its basic circuit to solve the above problems.

In order to achieve the purpose, the invention provides the following technical scheme: a low power semiconductor component and its basic circuitry, the method comprising: a low power semiconductor device and its basic circuit, including a semiconductor substrate having a substantially rectangular main surface having a first side in a first direction and a second side in a second direction intersecting the first direction, a first transistor and a second transistor formed on the semiconductor substrate, the transistors each including a source, a drain, and a gate, a trench silicide layer electrically connecting one of the source or the source of the first transistor to one of the source or the drain of the second transistor, characterized in that: the trench silicide layer is at least partially embedded in the semiconductor substrate, a first local interconnect layer electrically connected to and in contact with the trench silicide layer, and a second local interconnect layer electrically connected to a gate of one of the first and second transistors and electrically connected to the first local interconnect layer.

Preferably, the first local interconnect layer extends between a first end and a second end, and wherein the second local interconnect layer is at a midpoint between the first and second ends of the first local interconnect layer.

Preferably, the gate of the first transistor and the gate of the second transistor extend linearly.

Preferably, the trench silicide layer is disposed on one side of the gates of the first and second transistors.

Preferably, the first local interconnect layer and the second local interconnect layer each comprise tungsten.

Preferably, the first local interconnect layer and the second local interconnect layer each comprise copper.

Preferably, the trench silicide layer electrically connects the drain of the first transistor to the drain of the second transistor.

Compared with the prior art, the invention has the beneficial effects that:

1. the transistor combination of the high-power emitter following mode formed by compounding one or more transistors can provide lower electrical differential pressure between the emitter and the collector under the condition that the transistor combination can meet the requirement of large current, thereby further reducing the voltage of a power supply.

2. The low-power semiconductor component and the basic circuit thereof have the advantages of novel conception, compact structure, high efficiency, small volume, convenient installation, light weight, no pollution, low cost, high power conversion efficiency, good control performance, easy industrial batch production and the like, and can be widely applied to occasions needing to provide a driving source for a semiconductor laser in the photoelectric field.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", etc., indicate orientations or positional relationships specifically referred to, but are only for convenience of description and simplicity of description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

As shown below, which illustrate specific embodiments of the present invention: a low power semiconductor device and its basic circuit, including the semiconductor base plate, have roughly rectangular main surfaces, the main surface has first side of the first direction and second side of the second direction crossed with the first direction, first transistor and second transistor formed on semiconductor substrate, the transistor each includes source, drain-source resistance, and grid, the silicide layer of ditch groove, connect the source of the first transistor or one of the source of the second transistor electrically or one of the drain-source resistance, characterized by that: the trench silicide layer is at least partially embedded in the semiconductor substrate, a first local interconnect layer electrically connected to and in contact with the trench silicide layer, and a second local interconnect layer electrically connected to a gate of one of the first and second transistors and electrically connected to the first local interconnect layer.

Preferably, the first local interconnect layer extends between a first end and a second end, and wherein the second local interconnect layer is at a midpoint between the first and second ends of the first local interconnect layer.

Preferably, the gate of the first transistor and the gate of the second transistor extend linearly, and the gate of the first transistor and the gate of the second transistor can control the current intensity of the gate and change the performance of the electron tube.

Preferably, the trench silicide layer is disposed on one side of the gates of the first and second transistors, and the formation of a salicide layer on the mesa between adjacent trenches in the semiconductor region can be effectively prevented, thereby minimizing the formation of oxide on the gate electrode.

Preferably, the first local interconnect layer and the second local interconnect layer each comprise tungsten, which has good semiconductor compatibility, is easy to manufacture, and has good adhesion.

Preferably, the first local interconnect layer and the second local interconnect layer each include copper, which is more conductive and can reduce resistance and signal delay.

Preferably, the trench silicide layer electrically connects the drain of the first transistor to the drain of the second transistor.

Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.