阅读说明：本技术 半导体激光装置 (Semiconductor laser device ) 是由 酒井贤司 泉和刚 于 2019-09-19 设计创作，主要内容包括：半导体激光装置包括：射出激光的半导体激光芯片；板状的基座；和从所述基座突出并且支承所述半导体激光芯片的块体。所述块体具有支承面和导线焊接面,所述支承面是朝向与所述激光的射出方向正交的第一方向的第一侧并且支承所述半导体激光芯片的面。所述导线焊接面是用于连接与所述半导体激光芯片导通的第一导线的面。所述导线焊接面相对于所述支承面在与所述射出方向和所述第一方向正交的第二方向上偏倚地配置。所述导线焊接面以随着在所述第二方向上越远离所述支承面而越位于所述第一方向的第二侧的方式相对于所述支承面倾斜。(The semiconductor laser device includes: a semiconductor laser chip for emitting laser light; a plate-shaped base; and a block protruding from the base and supporting the semiconductor laser chip. The block body has a support surface that faces a first side in a first direction orthogonal to an emission direction of the laser light and supports the semiconductor laser chip, and a wire bonding surface. The wire bonding surface is a surface for connecting a first wire that is electrically connected to the semiconductor laser chip. The wire bonding surface is disposed so as to be biased in a second direction orthogonal to the emission direction and the first direction with respect to the supporting surface. The wire bonding surface is inclined with respect to the support surface so as to be located on a second side of the first direction as the wire bonding surface is farther from the support surface in the second direction.)

1. A semiconductor laser device, comprising:

a semiconductor laser chip for emitting laser light in an emission direction;

a plate-shaped base; and

a block projecting from the base in the emission direction and supporting the semiconductor laser chip,

the block body has a support surface facing a first side in a first direction orthogonal to the emission direction and supporting the semiconductor laser chip, and a first wire bonding surface for connecting a first wire electrically connected to the semiconductor laser chip,

the first wire bonding surface is disposed so as to be biased in a second direction orthogonal to the emission direction and the first direction with respect to the supporting surface,

the first wire bonding surface is inclined with respect to the support surface so as to be located on a second side of the first direction as the wire bonding surface is farther from the support surface in the second direction.

2. A semiconductor laser device as claimed in claim 1, wherein:

the inclination angle of the first welding surface with respect to the support surface is in a range of more than 0 degrees and 6 degrees or less.

3. A semiconductor laser device according to claim 1 or 2, wherein:

in the structure further having the first lead and the second lead respectively supported by the base,

the first lead and the second lead are disposed with a space therebetween in the second direction with the supporting surface interposed therebetween.

4. A semiconductor laser device according to claim 3, wherein:

the first lead has a first protruding portion protruding from the base in the emission direction, the second lead has a second protruding portion protruding from the base in the emission direction,

the second protrusion has a protrusion length greater than that of the first protrusion.

5. The semiconductor laser device according to claim 4, wherein:

the base has a main surface facing the injection direction, the first protrusion has an end surface facing the injection direction,

an inclination angle of the first welding surface with respect to the support surface is larger than an inclination angle of the end surface of the first protruding portion with respect to the main surface of the base.

6. The semiconductor laser device according to claim 5, wherein:

the main surface of the base and the end surface of the first protrusion are parallel to each other.

7. A semiconductor laser device according to any one of claims 4 to 6, wherein:

the first protruding portion overlaps the first wire bonding face when viewed in the first direction,

the first wire bonding surface is located on a second side in the first direction with respect to the supporting surface.

8. A semiconductor laser device according to any one of claims 4 to 7, wherein:

the second protrusion has an end portion spaced apart from the base in the emission direction, and a second wire bonding surface for connecting a second wire electrically connected to the semiconductor laser chip is formed at the end portion,

the second wire bonding surface is inclined with respect to the support surface so as to be located on the second side of the first direction as the second wire bonding surface is farther from the support surface in the second direction.

9. A semiconductor laser device according to claim 8, wherein:

the second wire bonding surface has an inclination angle with respect to the support surface in a range of more than 0 degrees and 6 degrees or less.

10. A semiconductor laser device according to claim 9, wherein:

the block has a first block body portion including the support surface, a second block body portion including the first wire bonding surface, and a third block body portion overlapping the second protruding portion when viewed in the first direction, which are formed integrally with each other.

11. A semiconductor laser device according to claim 10, wherein:

the first block portion has a side surface located on the opposite side of the support surface and parallel to the support surface.

12. A semiconductor laser device according to claim 10 or 11, wherein:

the second protruding portion has a side surface opposite to the second wire bonding surface, the side surface having a first end portion and a second end portion spaced apart from each other in the second direction, and a protruding portion protruding toward the second side in the first direction is formed at the first end portion.

13. The semiconductor laser device according to any one of claims 8 to 12, wherein:

the semiconductor laser chip includes a semiconductor laser element and a spacer made of an insulating material for mounting the semiconductor laser element.

14. A semiconductor laser device according to claim 13, wherein:

a conductive portion is formed on the pad, and the semiconductor laser element is supported by the pad via the conductive portion,

the first wire is connected to the conductive portion and the first wire bonding surface, and the second wire is connected to the conductive portion and the second wire bonding surface.

15. The semiconductor laser device according to any one of claims 1 to 14, wherein:

the base and the block are formed as one piece.

Technical Field

The present invention relates to a semiconductor laser device.

Background

Conventionally, semiconductor laser devices have been used as light sources in various electronic devices. For example, JP2010-183002a discloses an example of a semiconductor laser device. The semiconductor laser device disclosed in this document includes a conductive stem, a semiconductor laser chip, a spacer, a plurality of leads, and a cap. The stem includes a disk-shaped base and a rectangular parallelepiped block projecting from the base in a light emission direction. The semiconductor laser chip is mounted on a support surface (a surface parallel to the emission direction) of the block via the spacer. The plurality of lead wires are fixed to the stem and extend parallel to each other. The semiconductor laser chip is electrically connected to the surface (wire bonding surface) of the pad via a first wire. In addition, the pad is electrically connected to one of the plurality of leads via a second wire. The cap covers the block and the semiconductor laser chip.

In the semiconductor laser device of the related art, the wire bonding surface of the spacer is parallel with respect to the supporting surface of the bulk. That is, the wire bonding surface faces in a direction orthogonal to the emission direction. The bonding operation of the first and second wires is performed by, for example, pressing the wires against the bonding site with a chopper (and applying ultrasonic vibration) while holding the outer peripheral portion of the base.

In the semiconductor laser device according to the related art, the base of the stem is circular. Therefore, the base may be displaced in the circumferential direction from the initial setting posture during the wire bonding. When such a misalignment occurs, the bonding area between the wire and the wire bonding surface may be undesirably small, and the bonding strength of the wire to the wire bonding surface may be insufficient.

Documents of the prior art

Patent document

Patent document 1: JP2010-183002A

Disclosure of Invention

Problems to be solved by the invention

In view of the above circumstances, an object of the present invention is to provide a semiconductor laser device suitable for preventing a decrease in bonding strength of a wire, for example.

Means for solving the problems

According to the present invention, there is provided a semiconductor laser device comprising: a semiconductor laser chip for emitting laser light in an emission direction; a plate-shaped base; and a block projecting from the base in the emission direction and supporting the semiconductor laser chip. The block body has a support surface facing a first side in a first direction orthogonal to the emission direction and supporting the semiconductor laser chip, and a first wire bonding surface. The first wire bonding surface is a surface for connecting a first wire that is electrically connected to the semiconductor laser chip. The first wire bonding surface is disposed so as to be biased in a second direction orthogonal to the emission direction and the first direction with respect to the supporting surface. The first wire bonding surface is inclined with respect to the support surface so as to be located on a second side of the first direction as the wire bonding surface is farther from the support surface in the second direction.

Other features and advantages of the present invention will become more apparent from the following detailed description, which proceeds with reference to the accompanying drawings.

Drawings

Fig. 1 is a perspective view showing a semiconductor laser device according to a first embodiment.

Fig. 2 is a plan view of the semiconductor laser device shown in fig. 1.

Fig. 3 is a sectional view taken along the line III-III of fig. 2.

Fig. 4 is a sectional view taken along line IV-IV of fig. 2.

Fig. 5 is a plan view showing a part of the semiconductor laser device shown in fig. 1.

Fig. 6 is a plan view showing a part of the semiconductor laser device shown in fig. 1.

Fig. 7 is a plan view illustrating one step in an example of the method for manufacturing the semiconductor laser device shown in fig. 1.

Fig. 8 is a perspective view showing a semiconductor laser device according to a second embodiment.

Fig. 9 is a sectional view taken along line IX-IX of fig. 8.

Detailed Description

Fig. 1 to 6 show a semiconductor laser device according to a first embodiment. As shown in fig. 1, a semiconductor laser device a1 of the present embodiment includes: a stem 1, a semiconductor laser chip 2, a light receiving element 3, a plurality of leads 41, 42, 43, and a plurality of wires 5. The use of the semiconductor laser device a1 is not particularly limited, and for example, the semiconductor laser device a1 is used as a light source device mounted on various electronic devices. For ease of understanding, the wires 5 are omitted in fig. 3 and 4.

In the present invention, in the description of the embodiment, 3 directions (x, y, z) orthogonal to each other are referred to as appropriate. As shown in fig. 1, for example, the direction z corresponds to the emission direction of the semiconductor laser chip 2. The direction z has 2 orientations (z1, z2) opposite to each other, which are hereinafter referred to as "direction z 1" and "direction z 2". As shown in fig. 1, the direction z1 is the front side in the emission direction of the semiconductor laser chip 2, and the direction z2 is the rear side in the emission direction of the semiconductor laser chip 2. Likewise, direction x has "direction x 1" and "direction x 2" opposite each other, and direction y has "direction y 1" and "direction y 2" opposite each other.

Fig. 1 is a perspective view showing a semiconductor laser device a 1. Fig. 2 is a plan view showing a semiconductor laser device a 1. Fig. 3 is a sectional view taken along the line III-III of fig. 2. Fig. 4 is a cross-sectional view taken along line IV-IV of fig. 2, and fig. 5 and 6 are plan views showing a part of a semiconductor laser device a 1.

The stem 1 is a base body of the semiconductor laser device a1, and has a base 11 and a block 12. In socket 1 of the present embodiment, base 11 and block 12 are integrally formed, but the present invention is not limited to this. The stem 1 is formed of, for example, Fe or an Fe alloy. The surface of the socket 1 may be plated with Ni, Cu, Au, or the like to a thickness of about 2 to 4 μm.

The base 11 is a plate-like member having a dimension (thickness) measured along the direction z, and has a circular shape as viewed in the direction z, for example. The base 11 has a main surface 111 facing the direction z 1. For example, the size of the susceptor 11 is about 5.6mm in diameter and about 0.5mm in thickness.

The base 11 has through holes 112 and 113. The through holes 112 and 113 penetrate the base 11 in the direction z, and are arranged at intervals in the x direction in the illustrated example. The through-holes 112 and 113 are not particularly limited, and are, for example, circular through-holes having a diameter of about 1.0 mm. The diameters of the through holes 112 and 113 may be set as appropriate depending on the sizes of the base 11 and the leads 41 and 42, the intervals between the leads 41 and 42, and the like.

The block 12 protrudes from the main surface 111 of the base 11 in the direction z 1. In the present embodiment, the block 12 has a first block body portion 121, a second block body portion 122, and a third block body portion 123. The first block portion 121 has a rectangular parallelepiped shape (see a dotted line in fig. 2). The first block portion 121 has a support surface 121a and a side surface 121 b. The support surface 121a is a surface for mounting the semiconductor laser chip 2. In the present embodiment, the support surface 121a is parallel to the direction z and faces the direction y 1. The side surface 121b faces the direction y2 opposite to the support surface 121 a. The side surface 121b is parallel to the support surface 121a and overlaps the support surface 121a when viewed in the direction y (see fig. 4).

In the manufacture of the semiconductor laser device a1, a dimensional error inevitably occurs. In consideration of this error, the direction in which the bearing surface 121a faces includes a direction substantially perpendicular to the direction z. Similarly, the side surface 121b can be substantially parallel to the support surface 121 a. In the following description, "right angle" and "parallel" include substantially right angle and substantially parallel, respectively.

As shown in fig. 1 and 2, the second block body portion 122 is located on the direction x1 side of the first block body portion 121, and is connected to the first block body portion 121. The second block body 122 has a fan shape as viewed in the direction z, and has a first wire bonding surface 122 a. The first wire bonding surface 122a is a portion for connecting one end of the wire 5 (first wire 51).

As shown in fig. 2, the first wire bonding surface 122a is generally oriented in the direction y1, but is inclined with respect to the support surface 121 a. Specifically, the first wire bonding surface 122a is inclined so as to be biased in the direction y2 as it moves away from the support surface 121a in the direction x. As shown in FIG. 5, the first wire bonding surface 122a is inclined with respect to the supporting surface 121a at an angle α 1 in a range of, for example, more than 0 degrees and not more than 6 degrees (0 ° < α 1 ≦ 6 °), preferably in a range of not less than 1 degree and not more than 3 degrees (1 ° < α 1 ≦ 3 °).

As shown in fig. 2, the third block portion 123 is located on the direction x2 side of the first block portion 121 and is connected to the first block portion 121. The third body portion 123 has a fan shape when viewed in the direction z, and has a side face 123 a. The side surface 123a is inclined with respect to the support surface 121 a. Specifically, the side surface 123a is inclined so as to be biased in the direction y2 as it is separated from the support surface 121a in the direction x.

As shown in fig. 2 to 4, the base 11 is provided with a recess 114. The concave portion 114 is recessed from the main surface 111 in the direction z 2. The recess 114 is located closer to the direction y1 than the support surface 121a of the block 12 as viewed in the direction z. The recess 114 is inclined so that its depth increases as it goes away from the block 12 in the direction y1 (see fig. 4).

The plurality of leads 41, 42, and 43 are used for fixing the semiconductor laser device a1 to a circuit board of an electronic device or the like, and constitute a power supply path to the semiconductor laser chip 2 and a conduction path to the light receiving element 3. Each of the leads 41, 42, 43 is a rod-shaped member formed of an Fe — Ni alloy, for example. The surface of each of the leads 41, 42, 43 may be plated with Au.

The lead 41 and the lead 42 are inserted through the through hole 112 and the through hole 113, respectively. As shown in fig. 1 to 3, the lead 41 has a first projecting portion 411 projecting from the base 11 in the direction z 1. The lead 41 has a projection projecting from the base 11 in the direction z2, and the projection is longer than the first projection 411.

The first protrusion 411 has an end face 411a facing in the direction z 1. In the present embodiment, the end surface 411a is flat and parallel to the main surface 111 of the susceptor 11. Instead of this structure, the end surface 411a may be inclined with respect to the main surface 111 of the susceptor 11. The inclination angle thereof is smaller than, for example, the above-mentioned angle α 1 (inclination angle of the first wire bonding surface 122a with respect to the supporting surface 121 a).

The lead 42 has a second protrusion 421 protruding from the base 11 in the direction z 1. As shown in fig. 3, the length of the second protrusion 421 (the length protruding from the base 11) is greater than the length of the first protrusion 411.

The second projection 421 has an end 422 spaced from the base 11 in the direction z 1. In the present embodiment, the end portion 422 is different in shape and size from the other portions of the second protruding portion 421. Specifically, as shown in fig. 2, the other portion of the second protruding portion 421 has a circular cross section, and the end portion 422 is formed in a substantially flat shape, and the thickness (minimum thickness or maximum thickness) thereof is smaller than the diameter of the other portion of the second protruding portion 421. As shown in fig. 1 and 3, at least a part of the end portion 422 has a rectangular shape in cross section as viewed in the direction y, and has a width (dimension measured along the direction x) larger than the diameter of the other part of the second protruding portion 421. As shown in fig. 1 and 2, the end portion 422 has a second wire bonding surface 422a, a side surface 422b, and a convex portion 423. The second wire bonding surface 422a is a portion to which one end of the wire 5 (second wire 52) is connected.

The second wire bonding surface 422a is slightly inclined with respect to the support surface 121a of the block 12 (first block portion 121) in the general direction y 1. Specifically, as shown in fig. 6, the second wire bonding surface 422a is inclined so as to be biased in the direction y2 as it is separated from the support surface 121a in the direction x. In the present embodiment, the inclination angle α 2 of the second wire bonding surface 422a with respect to the supporting surface 121a is, for example, in a range of more than 0 degrees and 6 degrees or less (0 ° < α 2 ≦ 6 °), and preferably in a range of 1 degree or more and 3 degrees or less (1 ° < α 2 ≦ 3 °).

The side surface 422b faces the opposite side of the second wire bonding surface 422 a. In this embodiment, side 422b faces in direction y 2. The side 422b has 2 ends spaced apart from each other in the direction x. The convex portion 423 is formed at one end (end on the direction x1 side) among the 2 ends of the side surface 422 b. The convex portion 423 protrudes in the direction y 2.

The length of the lead 41 is, for example, about 7.6 to 7.8 mm. The length of the portion of the lead 41 that is housed in the through hole 112 is about 1.0mm, the length of the portion that protrudes in the direction z1 (the length of the first protrusion 411) is about 0.1 to 0.3mm, and the length of the portion that protrudes in the direction z2 is about 6.5 mm.

The length of the lead 42 is, for example, about 9.0 mm. The length of the portion of the lead 42 that is housed in the through hole 113 is about 1.0mm, the length of the portion that protrudes in the direction z1 (the length of the second protrusion 421) is about 1.5mm, and the length of the portion that protrudes in the direction z2 is about 6.5 mm.

As shown in fig. 4, the lead 43 is bonded to the lower surface (surface facing the direction z2) of the base 11 and electrically connected to the stem 1. As understood from fig. 3 and 4, in the present embodiment, the lead 43 overlaps the block 12 of the stem 1 as viewed in the direction z. The length of the lead 43 is, for example, about 6.5 mm.

In the present embodiment, the through holes 112 and 113 are filled with the insulating filler 17. The insulating filler 17 fixes the lead wires 41 and 42 to the base 11 of the stem 1, and also functions to insulate the lead wires 41 and 42 from the stem 1. The insulating filler 17 is not particularly limited, and may be formed of glass, for example.

The semiconductor laser chip 2 is a light-emitting element in the semiconductor laser device a 1. In the present embodiment, the semiconductor laser chip 2 includes a semiconductor laser element 21 and a spacer (Sub-mount) 22. In the present invention, the semiconductor laser chip 2 is a light emitting element mounted on the stem 1, and may be configured without including the spacer 22.

The semiconductor laser element 21 has a structure in which a plurality of semiconductor layers are stacked. As shown in fig. 3, the semiconductor laser element 21 is formed in a shape extending in the direction z, for example. The laser beam L (see fig. 1) is emitted from the semiconductor laser element 21 in the direction z 1. The spacer 22 is made of an insulating material such as AlN, for example, and supports the semiconductor laser element 21. The spacer 22 is joined to the support surface 121a of the block 12 via a joining material. The bonding material is not particularly limited, and examples thereof include a metal paste containing Ag, In, Au, Sn, or the like, and solder.

In the present embodiment, the pad 22 has a surface facing the direction y1, and the conductive portion 23 is formed on the surface. The semiconductor laser element 21 is supported by a spacer 22 via a conductive portion 23, for example. The conductive portion 23 is formed of a paste material containing a conductive metal (e.g., Ag, In, Au, Sn, etc.). In the present embodiment, the conductive portion 23 includes a first conductive portion 231 and a second conductive portion 232. The first conductive portion 231 has a portion existing between the pad 22 and the semiconductor laser element 21, and a portion exposed from the semiconductor laser element 21. The first conductive portion 231 is electrically connected to the back surface electrode of the semiconductor laser element 21. The second conductive portion 232 is spaced apart from the first conductive portion 231, and the entire portion thereof is exposed from the semiconductor laser element 21.

As shown in fig. 1 to 4, the light receiving element 3 is housed in a recess 114 of the base 11. The light receiving element 3 is, for example, a photodiode. Light is also emitted from the semiconductor laser element 21 in a direction z2 opposite to the direction z1 (light leakage). The light receiving element 3 detects such leakage light. A back electrode is formed on the lower surface of the light receiving element 3, and the back electrode is electrically joined to the inner surface of the concave portion 114 via, for example, a metal paste. Thereby, the light receiving element 3 is electrically connected to the lead 43 through the base 11.

As shown in fig. 1 and 2, the plurality of conductive lines 5 include a first conductive line 51, a second conductive line 52, a third conductive line 53, and a 4 th conductive line 54. The first lead 51 connects the conductive portion 23 (first conductive portion 231) and the first lead bonding surface 122a of the block body 12 (second block body portion 122). The second wire 52 connects the conductive portion 23 (second conductive portion 232) and the second wire bonding surface 422a of the lead 42. The third wire 53 connects the pad electrode formed on the surface of the semiconductor laser element 21 and the conductive portion 23 (second conductive portion 232).

The lead 43 is electrically connected to the rear surface electrode of the semiconductor laser element 21 via the base 11, the block 12, the first wire 51, and the conductive portion 23 (the first conductive portion 231). The lead 42 is electrically connected to the pad electrode of the semiconductor laser element 21 via the second wire 52, the conductive portion 23 (second conductive portion 232), and the third wire 53. With such a configuration, in the semiconductor laser device a1, the power supply path to the semiconductor laser chip 2 (semiconductor laser element 21) is formed by the lead 42 and the lead 43.

The 4 th wire 54 connects a pad electrode formed on the surface of the light receiving element 3 and the end surface 411a of the lead 41. The lead 43 is electrically connected to the back electrode of the light receiving element 3 via the base 11. With such a configuration, in the semiconductor laser device a1, the lead 41 and the lead 43 form a conduction path to the light receiving element 3.

Next, an example of a method for manufacturing the semiconductor laser device a1 will be described.

First, the stem 1 is formed. The socket 1 is formed by preparing an Fe material or an Fe alloy material and cold forging the material. Thereby, the base 11 is integrally formed with the block 12. In addition, 2 through holes 112 and 113 and a concave portion 114 are formed simultaneously in the base 11. In forming the stem 1, cold forging is preferable from the viewpoint of, for example, dimensional accuracy and manufacturing efficiency, but other methods may be used.

Next, the lead 43 is bonded to the lower surface of the base 11. The bonding of the lead 43 is performed by, for example, soldering. This allows the lead 43 to be electrically connected to the base 11. Instead of soldering, the lead 43 may be conductively bonded to the base 11 by another method. Then, the leads 41 and 42 are inserted into the through holes 112 and 113, respectively. In a state where the leads 41 and 42 are inserted into the through holes 112 and 113, the through holes 112 and 113 are filled with a low melting point glass paste, and the glass paste is fired. Thereby, the glass paste is cured and becomes the insulating filling material 17. The leads 41, 42 are fixed to the base 11 via the insulating filler 17, and are electrically insulated from the base 11 by the insulating filler 17.

After fixing the lead wires 41 and 42 to the stem 1, the ends of the lead wire 42 on the side of the direction z1 are pressed from both sides in the y direction. Thereby, the end 422 having the second wire bonding face 422a and the side face 422b is formed. As shown in fig. 7, the end portions are pressed by, for example, pressing members 91 and 92. The pressing member 91 is inclined so that the end portion on the direction x1 side corresponds to the second wire bonding surface 422 a. The pressing member 92 has a length in the direction x shorter than that of the pressing member 91 in order to avoid interference with the block 12 (third block portion 123). By using the pressing members 91 and 92, the end 422 having the convex portion 423 is formed on the lead 42.

Next, the semiconductor laser chip 2 (the spacer 22 and the semiconductor laser element 21) and the light receiving element 3 are mounted on the stem 1, and the lead 5 is connected to appropriate portions of the semiconductor laser chip and the light receiving element by wire bonding.

When bonding the wire 5 (third wire 53) connected to the pad electrode of the semiconductor laser element 21 and the conductive portion 23 (second conductive portion 232), first bonding is performed on the pad electrode of the semiconductor laser element 21, and second bonding is performed on the conductive portion 23 (second conductive portion 232) using ultrasonic waves excited by a chopper. In the first welding and the second welding, the chopper is pressed in a direction y2 perpendicular to the support surface 121a with reference to the support surface.

The lead 5 (first lead 51) connected to the conductive portion 23 (first conductive portion 231) and the first lead bonding surface 122a of the block 12 is first bonded to the conductive portion 23 (first conductive portion 231) and second bonded to the first lead bonding surface 122 a. In the first welding and the second welding, the riving knife is pressed in a direction y2 perpendicular to the supporting surface 121a with reference thereto.

The wire 5 (second wire 52) connected to the conductive portion 23 (second conductive portion 232) and the second wire bonding surface 422a of the lead 42 is first bonded to the conductive portion 23 (second conductive portion 232) and second bonded to the second wire bonding surface 422 a. In the first welding and the second welding, the riving knife is pressed in a direction y2 perpendicular to the supporting surface 121a with reference thereto. Further, the wire bonding operation to the semiconductor laser element 21, the conductive portion 23 (the first conductive portion 231 and the second conductive portion 232), the first wire bonding surface 122a, or the second wire bonding surface 422a is performed with the outer peripheral portion of the base 11 held by a wire bonding apparatus, for example.

The lead 5 (4 th lead 54) connected to the pad electrode of the light receiving element 3 and the end surface 411a of the lead 41 is first soldered to the pad electrode of the light receiving element 3, and second soldered to the end surface 411 a. In the first and second welds, the riving knife is pressed in the direction z 2. Through such a series of operations, the semiconductor laser device a1 can be manufactured.

Next, the operation of the semiconductor laser device a1 will be described.

In the present embodiment, the first wire bonding surface 122a for connecting the wire 5 (the first wire 51) to the semiconductor laser chip 2 (the first conductive portion 231 on the spacer 22) supported by the supporting surface 121a is inclined with respect to the supporting surface 121 a. Specifically, the first wire bonding surface 122a is disposed so as to be biased in the direction x with respect to the support surface 121a, and is inclined so as to be located in the direction y2 as it becomes farther from the support surface 121a in the direction x (see fig. 5).

As described above, the semiconductor laser chip 2 and the lead wire of the first lead wire bonding surface 122a are connected to each other while the outer peripheral portion of the holder base 11 is bonded by the lead wire. Since the outer peripheral portion of the base 11 is circular, the base 11 may be slightly displaced in the circumferential direction from a desired posture. Here, if the first wire bonding surface 122a is inclined so as to be located in the direction y1 as it becomes farther from the support surface 121a in the direction x (on the opposite side to the inclination direction shown in fig. 5), the bonding surface formed by the second bonding may become smaller. According to the present embodiment, it is possible to suppress the first wire bonding surface 122a from inclining to the opposite side of the inclination direction shown in fig. 5 due to the displacement of the base 11 during the wire bonding operation. Therefore, an appropriate size can be secured for the joint portion (stitch-bonding portion 55 shown in fig. 5) with the first wire bonding surface 122a formed by the second bonding to the first wire bonding surface 122 a. Therefore, it is possible to prevent the bonding strength of the lead 5 (first lead 51) from being reduced due to, for example, displacement of the base 11 during the lead bonding.

If the angle α 1 at which the first wire bonding surface 122a is inclined with respect to the supporting surface 121a is in the range of more than 0 degrees and 6 degrees or less as described above, the wire bonding work (second bonding) can be performed accurately, and the wire 5 (first wire 51) connecting the semiconductor laser chip 2 and the first wire bonding surface 122a can be formed accurately.

The lead 41 has a first protruding portion 411 protruding from the base 11 in the direction z 1. The first protruding portion 411 overlaps the first wire bonding surface 122a when viewed in the direction y, slightly protrudes from the base 11 in the direction z1, and has a protruding length from the base 11 smaller than the second protruding portion 421 of the lead 42. With this configuration, the lead 5 (first lead 51) can be accurately connected to the semiconductor laser chip 2 and the first lead bonding surface 122a while avoiding interference with the first protrusion 411.

A side surface 121b facing the opposite side to the support surface 121a and overlapping the support surface 121a when viewed in the direction y is formed on the block 12 (first block portion 121). The side surface 121b is parallel to the support surface 121 a. According to such a structure, the stem 1 can be easily held by the support surface 121a and the side surface 121b parallel to each other when being gripped during the manufacturing process of the semiconductor laser device a 1.

In the present embodiment, the second wire bonding surface 422a for connecting the wire 5 (the second wire 52) to the semiconductor laser chip 2 (the second conductive portion 232 on the pad 22) supported by the supporting surface 121a is inclined with respect to the supporting surface 121 a. Specifically, the second wire bonding surface 422a is disposed biased in the direction x with respect to the support surface 121a, and is inclined in the direction x so as to be located in the direction y2 as it becomes farther from the support surface 121a (see fig. 6).

As described above, according to the configuration in which the second wire bonding surface 422a is inclined with respect to the support surface 121a, an accurate dimension can be secured with respect to the joint (the stitch bonding portion 56 shown in fig. 6) with the second wire bonding surface 422a formed by the second bonding to the second wire bonding surface 422 a. Therefore, it is possible to prevent the bonding strength of the lead 5 (second lead 52) from being reduced due to the misalignment of the base 11 at the time of wire bonding.

If the angle α 2 at which the second wire bonding surface 422a is inclined with respect to the supporting surface 121a is in the range of more than 0 degrees and 6 degrees or less as described above, the wire bonding work (second bonding) can be performed accurately, and the wire 5 (second wire 52) connecting the semiconductor laser chip 2 and the second wire bonding surface 422a can be formed accurately.

Fig. 8 and 9 show a semiconductor laser device according to a second embodiment. In the drawings of fig. 8 and subsequent drawings, the same or similar elements as those of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted as appropriate.

The semiconductor laser device a2 is different from the first embodiment in that it has a structure of the stem 1 and a cap 6.

In the semiconductor laser device a2, the susceptor 11 and the block 12 are formed as separate bodies from each other. As shown in fig. 9, the base 11 and the block 12 are connected to each other by a joint material 18. The susceptor 11 is made of, for example, Fe or an Fe alloy. The block 12 may be made of Fe or an Fe alloy, or may be made of Cu or a Cu alloy instead of this configuration. The joining material 18 may be a material made of, for example, a paste containing a metal or a joining alloy for welding, or a welded portion formed by welding.

The cap 6 covers the semiconductor laser chip 2 and the block 12, and is fixed to the main surface 111 of the base 11 of the stem 1. The cover 6 has a body portion 61, a top portion 62, a flange portion 64, and a transparent cover 65. The trunk portion 61 surrounds the semiconductor laser chip 2 and the block 12 as viewed in the direction z, and is formed in a circular shape, for example. In fig. 8, the cover 6 is shown by a phantom line.

The top portion 62 is connected to the end of the body portion 61 in the direction z1 and is located on the direction z1 side with respect to the semiconductor laser chip 2. In the present embodiment, the top 62 is circular in shape. An opening 63 is formed in the top 62. The opening 63 is a portion for passing light from the semiconductor laser chip 2. In the present embodiment, the opening 63 is formed in a circular shape.

The flange portion 64 is connected to the body portion 61 on the direction z2 side and extends outward along the xy plane. The flange portion 64 is, for example, annular and can be fixed to the main surface 111 of the base 11 by welding or a bonding material.

The transparent cover 65 closes the opening 63 and transmits light from the semiconductor laser chip 2. The transparent cover 65 is made of a material transparent to light from the semiconductor laser chip 2. By using the cover 6 (and the transparent cover 65), light from the semiconductor laser device a2 can be selectively emitted through a relatively narrow region. In this embodiment, a transparent cover 65 is mounted on the lower surface of the top 62 of the cover 6.

In the present embodiment, the first wire bonding surface 122a is disposed so as to be biased in the direction x with respect to the support surface 121a, and is inclined so as to be located in the direction y2 as it becomes farther from the support surface 121a in the direction x. With this configuration, it is possible to prevent a decrease in the bonding strength of the lead 5 (first lead 51) due to misalignment of the base 11 at the time of wire bonding for forming the lead 5 (first lead 51). In addition, the semiconductor laser device a2 of the present embodiment can exhibit the same operational effects as those described with respect to the semiconductor laser device a 1.

In the second embodiment, the base 11 and the block 12 are formed as separate bodies from each other. The block 12 is made of Cu having higher thermal conductivity than Fe, and thus the heat dissipation of the block 12 (stem 1) can be improved.

In the second embodiment, the semiconductor laser chip 2 can be protected more reliably by the cover 6. By providing the transparent cover 65, the light emitted from the semiconductor laser device a2 can be made to have relatively high directivity.

While various embodiments have been described above, the present invention is not limited to these embodiments, and various modifications can be made without departing from the scope of the present invention. The specific structure of the semiconductor laser device of the present invention can be variously modified.

The present invention includes the structure described in the attached notes below.

Supplementary note 1.

A semiconductor laser device, comprising:

a semiconductor laser chip for emitting laser light in an emission direction;

a plate-shaped base; and

a block projecting from the base in the emission direction and supporting the semiconductor laser chip,

the block body has a support surface facing a first side in a first direction orthogonal to the emission direction and supporting the semiconductor laser chip, and a first wire bonding surface to which a first wire to be electrically connected to the semiconductor laser chip is connected,

the first wire bonding surface is disposed so as to be biased in a second direction orthogonal to the emission direction and the first direction with respect to the supporting surface,

the first wire bonding surface is inclined with respect to the support surface so as to be located on a second side of the first direction as the wire bonding surface is farther from the support surface in the second direction.

Reference is made to FIG. 2.

In the semiconductor laser device described in supplementary note 1, an inclination angle of the first bonding surface with respect to the supporting surface is in a range of more than 0 degrees and 6 degrees or less.

Reference numeral 3.

In the semiconductor laser device described in supplementary note 1 or 2, in a structure further comprising a first lead and a second lead supported by the base, respectively,

the first lead and the second lead are disposed with a space therebetween in the second direction with the supporting surface interposed therebetween.

Reference numeral 4.

In the semiconductor laser device described in additional note 3, the first lead has a first protruding portion protruding from the base in the emission direction, the second lead has a second protruding portion protruding from the base in the emission direction,

the second protrusion has a protrusion length greater than that of the first protrusion.

Reference numeral 5.

In the semiconductor laser device described in supplementary note 4, the base has a main surface facing the emission direction, the first protruding portion has an end surface facing the emission direction,

an inclination angle of the first welding surface with respect to the support surface is larger than an inclination angle of the end surface of the first protruding portion with respect to the main surface of the base.

Reference numeral 6.

In the semiconductor laser device described in supplementary note 5, the main surface of the base and the end surface of the first protruding portion are parallel to each other.

Reference numeral 7.

In the semiconductor laser device according to any one of supplementary notes 4 to 6, the first protrusion overlaps the first wire bonding surface when viewed in the first direction,

the first wire bonding surface is located on a second side in the first direction with respect to the supporting surface.

Reference numeral 8.

In the semiconductor laser device according to any one of supplementary notes 4 to 7, the second protrusion has an end portion spaced apart from the base in the emission direction, and a second wire bonding surface for connecting a second wire electrically connected to the semiconductor laser chip is formed at the end portion,

the second wire bonding surface is inclined with respect to the support surface so as to be located on the second side of the first direction as the second wire bonding surface becomes farther from the support surface in the second direction.

Reference numeral 9.

In the semiconductor laser device described in supplementary note 8, an inclination angle of the second wire bonding surface with respect to the supporting surface is in a range of more than 0 degrees and 6 degrees or less.

Reference is made to fig. 10.

In the semiconductor laser device described in supplementary note 9, the block has a first block portion, a second block portion and a third block portion which are formed integrally with each other, the first block portion includes the support surface, the second block portion includes the first wire bonding surface, and the third block portion overlaps the second protruding portion when viewed in the first direction.

Reference is made to FIG. 11.

In the semiconductor laser device described in supplementary note 10, the first block portion has a side surface which is located on the opposite side of the support surface and is parallel to the support surface.

Reference is made to FIG. 12.

In the semiconductor laser device according to supplementary note 10 or 11, the second protruding portion has a side surface opposite to the second wire bonding surface, the side surface having a first end portion and a second end portion spaced apart from each other in the second direction, and a convex portion protruding toward the second side in the first direction is formed at the first end portion.

Reference numeral 13.

The semiconductor laser device according to any one of supplementary notes 8 to 12, wherein the semiconductor laser chip includes a semiconductor laser element and a spacer made of an insulating material for mounting the semiconductor laser element.

Reference numeral 14.

In the semiconductor laser device described in supplementary note 13, a conductive portion is formed on the pad, the semiconductor laser element is supported by the pad via the conductive portion,

the first wire is connected to the conductive portion and the first wire bonding surface, and the second wire is connected to the conductive portion and the second wire bonding surface.

Reference numeral 15.

In the semiconductor laser device according to any one of supplementary notes 1 to 14, the base and the block are integrally formed.