阅读说明：本技术 一种激光光灸用复合激光器及封装方法 (Composite laser for laser light moxibustion and packaging method ) 是由 周莉 刘琦 刘存志 于 2019-09-29 设计创作，主要内容包括：本发明公开了一种激光光灸用复合激光器及封装方法,所述复合激光器包括基座,所述基座上表面分别固定有红外激光模块和红光模块,所述红外激光模块、红光模块和基座的中心位于同一直线上；所述基座上方还设置有若干个电极引脚一、电极引脚二,所述红外激光模块与电极引脚一连接,所述红光模块与电极引脚二连接。本发明设计了一种激光光灸用复合激光器及封装方法,结构设计合理,工艺简单,不仅大大简化了激光器的结构和工艺,在降低成本的同时利用半导体作为光源,且将多种光源整合至一个激光器中,适用于多种应用环境,体型小巧,便于携带,还可直接近距离作用于需治疗部位,保证光灸效果,具有较高的实用性。(The invention discloses a composite laser for laser light moxibustion and a packaging method, wherein the composite laser comprises a base, an infrared laser module and a red light module are respectively fixed on the upper surface of the base, and the centers of the infrared laser module, the red light module and the base are positioned on the same straight line; the infrared laser module is connected with the electrode pin I, and the red light module is connected with the electrode pin II. The composite laser for laser light moxibustion and the packaging method have the advantages that the structural design is reasonable, the process is simple, the structure and the process of the laser are greatly simplified, the semiconductor is used as a light source while the cost is reduced, multiple light sources are integrated into one laser, the composite laser is suitable for multiple application environments, the size is small and exquisite, the carrying is convenient, the composite laser can directly act on a part needing to be treated in a short distance, the light moxibustion effect is guaranteed, and the practicability is high.)

1. The utility model provides a compound laser instrument for laser light moxibustion which characterized in that: the composite laser comprises a base (1), wherein an infrared laser module (2) and a red light module (3) are respectively fixed on the upper surface of the base (1), and the centers of the infrared laser module (2), the red light module (3) and the base (1) are positioned on the same straight line; the infrared laser module is characterized in that a plurality of electrode pins I (11) and electrode pins II (12) are further arranged above the base (1), the infrared laser module (2) is connected with the electrode pins I (11), and the red light module (3) is connected with the electrode pins II (12).

2. The composite laser for laser light moxibustion according to claim 1, characterized in that: a placing groove (13) is formed in the middle of the upper portion of the base (1), the placing groove (13) is of an H-shaped structure, and the placing groove (13) is located on the central line of the base (1); the two ends of the placing groove (13) are respectively provided with a first notch (131) and a second notch (132), the infrared laser module (2) is fixedly installed in the first notch (131), and the first electrode pin (11) is arranged close to the first notch (131); the red light module (3) is fixedly installed in the second notch (132), and the second electrode pin (12) is arranged close to the second notch (132).

3. The composite laser for laser light moxibustion according to claim 2, characterized in that: the infrared laser module (2) comprises an infrared laser chip (21), a first heat sink block (22) and an infrared photoelectric chip (23), the first heat sink block (22) is fixedly installed in the first notch (131), the infrared laser chip (21) is bonded on the surface of the first heat sink block (22), the infrared photoelectric chip (23) is arranged close to the first notch (131), and the bottom surface of the infrared photoelectric chip is bonded on the base (1); the infrared laser chip (21), the heat sink block I (22) and the infrared photoelectric chip (23) are respectively connected with an electrode pin I (11).

4. The composite laser for laser light moxibustion according to claim 3, characterized in that: the infrared laser module (2) further comprises infrared focusing fibers (24), the infrared focusing fibers (24) are fixed in the first notch (131), and the infrared focusing fibers (24) are located above the infrared laser chip (21).

5. The composite laser for laser light moxibustion according to claim 2, characterized in that: the red light module (3) comprises a red light laser chip (31), a second heat sink block (32) and a red light photoelectric chip (33), the second heat sink block (32) is fixedly installed in the second notch (132), the red light laser chip (31) is adhered to the surface of the second heat sink block (32), the red light photoelectric chip (33) is arranged close to the second notch (132), and the bottom surface of the red light photoelectric chip is adhered to the base (1); the red laser chip (31), the heat sink block II (32) and the red photoelectric chip (33) are respectively connected with one electrode pin II (12).

6. The composite laser for laser light moxibustion according to claim 1, characterized in that: the number of the first electrode pins (11) and the second electrode pins (12) is 3, and one end of each of the first electrode pins (11) and the second electrode pins (12) penetrates through the base (1) and is located below the base (1).

7. A packaging method of a composite laser for laser moxibustion is characterized in that: the method comprises the following steps:

1) preparing a base (1) and carrying out preliminary inspection;

2) packaging the infrared laser module (2) and the red light module (3);

3) and finishing the operation to obtain the composite laser.

8. The method for packaging a composite laser for laser moxibustion according to claim 7, comprising: the method comprises the following steps:

1) preparation work and preliminary examination: preparing a base (1), wherein a placing groove (13) is arranged above the base (1), two ends of the placing groove (13) are provided with a first notch (131) and a second notch (132), and two sides of the placing groove (13) close to the first notch (131) and the second notch (132) are respectively provided with a first electrode pin (11) and a second electrode pin (12); preparing components of a red light module (3) and an infrared laser module (2), and checking the operation condition of each device;

2) encapsulation of infrared laser module (2), ruddiness module (3):

a) packaging of infrared photoelectric chips (23) and red photoelectric chips (33): assembling the base (1) prepared in the step 1) into an assembly fixture, then dispensing silver paste on one side of the base (1) close to the first notch (131), and bonding an infrared photoelectric chip (23) on the silver paste; dispensing silver paste on one side of the base (1) close to the second notch (132), and bonding the red light photoelectric chip (33) on the silver paste; then placing the mixture into an oven for baking and cooling;

b) taking the cooled base (1), connecting the infrared photoelectric chip (23) with one electrode pin I (11) by using a gold thread, and connecting the red photoelectric chip (33) with one electrode pin II (12) by using a gold thread to obtain the base (1) packaged with the red photoelectric chip (33) and the infrared photoelectric chip (23);

c) taking the first heat sink block (22), placing the first heat sink block (22) on a heating platform, heating at 345 and 355 ℃ until the solder area on the upper surface of the first heat sink block (22) is melted, then placing the infrared laser chip (21) on the upper surface of the first heat sink block (22), keeping the heating temperature, heating for 25-35s, and naturally cooling to obtain the first heat sink block (22) adhered with the infrared laser chip (21);

d) taking the second heat sinking block (32), placing the first heat sinking block (22) on a heating platform, heating at the temperature of 290 ℃ and 310 ℃, placing the red laser chip (31) on the upper surface of the second heat sinking block (32) when the solder area on the upper surface of the second heat sinking block (32) is melted, keeping the heating temperature, heating for 5-15s, and naturally cooling to obtain the second heat sinking block (32) adhered with the infrared laser chip (21);

e) taking the base (1) processed in the step b), dispensing silver paste on a first notch (131) of the base (1), then taking a first heat sink block (22) processed in the step c), adhering one side, far away from the infrared laser chip (21), of the first heat sink block (22) to the silver paste, pressing down and adjusting the position of the first heat sink block (22) until the infrared laser chip (21) is positioned on the central line of the base (1); placing the base (1) into an oven for baking, and then respectively connecting the infrared laser chip (21) and the heat sink block I (22) with an electrode pin I (11) by using gold wires;

f) taking the base (1) processed in the step e), dispensing silver paste on a second notch (132) of the base (1), then taking the second heat sink block (32) processed in the step d), adhering one side, far away from the red light laser chip (31), of the second heat sink block (32) to the silver paste, pressing down and adjusting the position of the second heat sink block (32) until the red light laser chip (31) is positioned on the central line of the base (1); placing the base (1) into an oven for baking, and then respectively connecting the red light laser chip (31) and the heat sink block II (32) with an electrode pin II (12) by using gold wires;

g) encapsulation of infrared focusing fibers (24): taking the base (1) obtained after the treatment in the step 2), electrifying the red light chip to 100mA, fixing the infrared focusing fiber (24) above the red light laser chip (31) by using glue under the CCD camera, and adjusting the position of the infrared focusing fiber (24) until the light spots are uniformly focused into a square or a square;

3) and finishing the operation to obtain the composite laser.

9. The method for packaging a composite laser for laser moxibustion according to claim 8, comprising: in the step a), the baking temperature is 95-105 ℃, and the baking time is 75-85 min.

10. The method for packaging a composite laser for laser moxibustion according to claim 8, comprising: in the step e) and the step f), the baking temperature is 90-110 ℃, and the baking time is 75-85 min.

Technical Field

The invention relates to the technical field of semiconductor laser packaging, in particular to a composite laser for laser light moxibustion and a packaging method.

Background

Moxibustion is an important component of acupuncture and moxibustion, and the entry of medicine points out that: the moxibustion is required to be done if the herbs are not good enough or the needles are not good enough. The heat effect of different laser wavelengths on the human body can replace the traditional moxibustion therapy, and the treatment of the clinical laser light moxibustion is realized.

In the prior art, moxibustion is generally carried out by a solid laser, the body is large and inconvenient to move, laser needs to be guided to a part needing to be treated by optical fibers, and a plurality of optical fibers are needed when various light sources are used, so that inconvenience is brought to people when the light sources are used.

In view of the above problems, a composite laser for laser light moxibustion and a packaging method thereof are designed, which can realize that a laser light source directly acts on a part to be treated in a short distance, and are one of the problems to be solved urgently.

Disclosure of Invention

The invention aims to provide a composite laser for laser moxibustion and a packaging method, so as to solve the problems in the prior art.

In order to achieve the purpose, the invention provides the following technical scheme:

a composite laser for laser moxibustion comprises a base, wherein an infrared laser module and a red light module are respectively fixed on the upper surface of the base, and the centers of the infrared laser module, the red light module and the base are positioned on the same straight line; the infrared laser module is connected with the electrode pin I, and the red light module is connected with the electrode pin II.

In the prior art, when laser light moxibustion is carried out, a solid laser is generally adopted, the body size is large, a plurality of optical fibers are needed to guide laser to a part to be treated, the cost is high, and the laser light moxibustion is inconvenient to use; the invention designs a composite laser for laser light moxibustion, which utilizes a semiconductor as a light source of the laser, has small volume and convenient carrying, can directly act the laser light source on the part to be treated in a short distance, and is more convenient and faster in actual operation; meanwhile, only one light source is generally arranged in the conventional laser, and the infrared laser module and the red light module are effectively integrated on the base, so that red light and infrared light can be used independently and can also be used in a matched manner.

When the red laser chip and the infrared laser chip emit light, two beams of light have an intersection superposition part at a certain distance, so that the centers of the infrared laser module, the red light module and the base are positioned on the same straight line, and the invention can ensure that when the infrared laser and the red light are used simultaneously, the superposition part of the two lasers which can act on the same skin has large area, realizes the cooperative use of the red light and the infrared light, and improves the optical moxibustion effect.

Preferably, a placing groove is arranged in the middle of the upper portion of the base, the placing groove is of an H-shaped structure, and the placing groove is located on the central line of the base; the two ends of the placing groove are respectively provided with a first notch and a second notch, the infrared laser module is fixedly installed in the first notch, and the first electrode pin is arranged close to the first notch; the red light module is fixedly installed in the second notch, and the second electrode pin is arranged close to the second notch.

According to the invention, the placing groove is designed and used for placing the red light module and the infrared laser module, so that the whole structure is more compact, and the connection among all the components is more portable.

Preferably, the infrared laser module comprises an infrared laser chip, a first heat sink block and an infrared photoelectric chip, the first heat sink block is fixedly arranged in the first notch, the infrared laser chip is adhered to the surface of the first heat sink block, the infrared photoelectric chip is arranged close to the first notch, and the bottom surface of the infrared photoelectric chip is adhered to the base; the infrared laser chip, the heat sink block I and the infrared photoelectric chip are respectively connected with an electrode pin I.

Preferably, the infrared laser module further comprises an infrared focusing fiber, the infrared focusing fiber is fixed in the first notch, and the infrared focusing fiber is located above the infrared laser chip.

The infrared laser module comprises an infrared laser chip, a heat sink block I, an infrared photoelectric chip and infrared focusing fibers, wherein the infrared laser chip can be used as an infrared light source to emit light, and the heat sink block I is an insulating heat sink block, so that the heat dissipation effect can be effectively achieved, and the loss caused by heating and warming of the infrared laser chip is avoided; the infrared focusing fiber can play a role in shaping, the light spots of infrared light are shaped into square or rectangular light spots, the energy is more uniform, and the infrared focusing fiber is used for increasing the physical therapy effect of moxibustion.

Preferably, the red light module comprises a red light laser chip, a second heat sink block and a red light photoelectric chip, the second heat sink block is fixedly arranged in the second notch, the red light laser chip is adhered to the surface of the second heat sink block, the red light photoelectric chip is arranged close to the second notch, and the bottom surface of the red light photoelectric chip is adhered to the base; the red light laser chip, the heat sink block II and the red light photoelectric chip are respectively connected with an electrode pin II.

The red light module comprises a red light laser chip, a heat sink block II and a red light photoelectric chip, wherein the red light laser chip can be used as a red light source, and the heat sink block II plays a role in heat dissipation.

Preferably, the number of the first electrode pins and the number of the second electrode pins are 3, and one ends of the first electrode pins and one ends of the second electrode pins penetrate through the base and are located below the base.

According to the invention, the first electrode pin and the second electrode pin both penetrate through the base and are respectively fixed on the cylindrical base through insulating glue or insulating solder, and the electrode pin part positioned on the front surface of the cylindrical base is flattened; in actual operation, the red light module selects a red light laser chip with the wavelength of 0.6-0.7 um and the power of 10-50 mW as the thermotherapy action wavelength of moxibustion; the infrared laser module can select a laser chip with the infrared laser wavelength of 0.7-1.3 um and the power of 10-50 mW as the physical therapy wavelength of moxibustion therapy.

In the practical operation of the invention, the base is made of metal or metal alloy with good heat conduction, the diameter of the cylindrical base can be preferably 8mm-12mm, and the height of the cylinder is preferably 1mm-3 mm; the length of the placing groove can be preferably 3mm-5mm, the width can be preferably 1mm-2mm, and the height can be preferably 3mm-4 mm.

Preferably, the packaging method of the composite laser for laser moxibustion comprises the following steps:

1) preparing work and preliminary examination;

2) packaging the infrared laser module and the red light module;

3) and finishing the operation to obtain the composite laser.

Preferably, the method comprises the following steps:

1) preparation work and preliminary examination: preparing a base, wherein a placing groove is arranged above the base, two ends of the placing groove are a notch I and a notch II, and an electrode pin I and an electrode pin II are respectively arranged on two sides of the placing groove close to the notch I and the notch II; preparing components of a red light module and an infrared laser module, and checking the operation condition of each device; preparing each component in the step 1), and detecting the operation condition of each device to ensure the smooth operation of subsequent operation;

2) packaging the infrared laser module and the red light module:

a) packaging the infrared photoelectric chip and the red photoelectric chip: assembling the base prepared in the step 1) into an assembly fixture, dispensing silver paste on one side of the base close to the first notch, and bonding the infrared photoelectric chip on the silver paste; dispensing silver paste on one side of the base close to the second notch, and bonding the red light photoelectric chip on the silver paste; then placing the mixture into an oven for baking and cooling;

b) taking the cooled base, connecting the infrared photoelectric chip with one electrode pin I by using a gold thread, and connecting the red photoelectric chip with one electrode pin II by using the gold thread to obtain the base packaged with the red photoelectric chip and the infrared photoelectric chip;

c) taking the first heat sink block, placing the first heat sink block on a heating platform, heating at 345 and 355 ℃ until the solder area on the upper surface of the first heat sink block is melted, placing the infrared laser chip on the upper surface of the first heat sink block, keeping the heating temperature, heating for 25-35s, and naturally cooling to obtain the first heat sink block bonded with the infrared laser chip;

d) taking the second heat sink block, placing the first heat sink block on a heating platform, heating at the temperature of 290-310 ℃ until the solder area on the upper surface of the second heat sink block is melted, placing the red laser chip on the upper surface of the second heat sink block, keeping the heating temperature, heating for 5-15s, and naturally cooling to obtain the second heat sink block bonded with the infrared laser chip;

e) taking the base treated in the step b), dispensing silver adhesive on a first notch of the base, taking a first heat sink block treated in the step c), adhering one side of the first heat sink block, which is far away from the infrared laser chip, to the silver adhesive, pressing down and adjusting the position of the first heat sink block until the infrared laser chip is positioned on the central line of the base; placing the base into an oven for baking, and then respectively connecting the infrared laser chip and the first heat sink block with the first electrode pin by using gold wires;

f) taking the base treated in the step e), dispensing silver paste on a second notch of the base, taking a second heat sink block treated in the step d), adhering one side, far away from the red light laser chip, of the second heat sink block to the silver paste, pressing down and adjusting the position of the second heat sink block until the red light laser chip is positioned on the central line of the base; placing the base into an oven for baking, and then respectively connecting the red light laser chip and the heat sink block II with an electrode pin II by using gold wires;

g) packaging the infrared focusing fibers: taking the base obtained after the treatment in the step 2), electrifying the red light chip to 100mA, fixing the infrared focusing fiber above the red light laser chip by using glue under a CCD camera, and adjusting the position of the infrared focusing fiber until the light spots are uniformly focused into a square or a square;

3) and finishing the operation to obtain the composite laser.

Preferably, in the step a), the baking temperature is 95-105 ℃, and the baking time is 75-85 min.

Preferably, in the step e) and the step f), the baking temperature is 90-110 ℃, and the baking time is 75-85 min.

Compared with the prior art, the invention has the beneficial effects that:

the composite laser for laser light moxibustion and the packaging method have the advantages that the structural design is reasonable, the process is simple, the structure and the process of the laser are greatly simplified, the semiconductor is used as a light source while the cost is reduced, multiple light sources are integrated into one laser, the composite laser is suitable for multiple application environments, the size is small and exquisite, the carrying is convenient, the composite laser can directly act on a part needing to be treated in a short distance, the light moxibustion effect is guaranteed, and the practicability is high.

Drawings

In order that the present invention may be more readily and clearly understood, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments that are illustrated in the appended drawings.

FIG. 1 is a top view of a base of a composite laser for laser moxibustion according to the present invention;

FIG. 2 is a rear side view of the base of the composite laser for laser moxibustion according to the present invention;

FIG. 3 is a front side view of a base of a composite laser for laser moxibustion according to the present invention;

FIG. 4 is a left side view of the base of the composite laser for laser moxibustion according to the present invention;

FIG. 5 is a right side view of the base of the composite laser for laser moxibustion according to the present invention;

FIG. 6 is a top view of a laser package of a composite laser for laser light moxibustion according to the present invention;

FIG. 7 is a top view of a laser package of a composite laser for laser light moxibustion in accordance with the present invention;

FIG. 8 is a left side view of a laser package of a composite laser for laser moxibustion according to the present invention.

In the figure: 1-base, 11-electrode pin I, 12-electrode pin II, 13-placing groove, 131-notch I, 132-notch II, 2-infrared laser module, 21-infrared laser chip, 22-heat sink block I, 23-infrared photoelectric chip, 24-infrared focusing fiber, 3-red light module, 31-red light laser chip, 32-heat sink block II and 33-red light photoelectric chip.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The structure of the laser prepared according to the technical scheme of the invention is shown in the following figures 1-8, and the laser can be operated according to the technical scheme of the invention in practical operation, specifically as shown in the following;

example 1:

s1: preparing a base 1, wherein a placing groove 13 is arranged above the base 1, two ends of the placing groove 13 are a first notch 131 and a second notch 132, and two sides of the placing groove 13, which are close to the first notch 131 and the second notch 132, are respectively provided with a first electrode pin 11 and a second electrode pin 12; preparing components of the red light module 3 and the infrared laser module 2, and checking the running condition of each device;

s2: assembling the base 1 into an assembly fixture, dispensing silver paste on one side of the base 1 close to the first notch 131, and bonding the infrared photoelectric chip 23 on the silver paste; dispensing silver paste on one side of the base 1 close to the second notch 132, and bonding the red photoelectric chip 33 on the silver paste; then placing the mixture into an oven for baking and cooling; wherein the baking temperature is 95 ℃, and the baking time is 75 min;

s3: taking the cooled base 1, connecting the infrared photoelectric chip 23 with one electrode pin I11 by using a gold thread, and connecting the red photoelectric chip 33 with one electrode pin II 12 by using a gold thread to obtain the base 1 packaged with the red photoelectric chip 33 and the infrared photoelectric chip 23;

s4: taking the first heat sink block 22, placing the first heat sink block 22 on a heating platform, heating at 345 ℃ until the solder area on the upper surface of the first heat sink block 22 is melted, placing the infrared laser chip 21 on the upper surface of the first heat sink block 22, keeping the heating temperature, heating for 25s, and naturally cooling to obtain the first heat sink block 22 bonded with the infrared laser chip 21; taking the second heat sink block 32, placing the first heat sink block 22 on a heating platform, heating at 290 ℃, placing the red laser chip 31 on the upper surface of the second heat sink block 32 when the solder area on the upper surface of the second heat sink block 32 is molten, keeping the heating temperature, heating for 5s, and naturally cooling to obtain the second heat sink block 32 bonded with the infrared laser chip 21;

s5: taking the base 1 processed in the step S3, dispensing silver paste on the first notch 131 of the base 1, taking the first heat sink block 22, adhering one side of the first heat sink block 22, which is far away from the infrared laser chip 21, to the silver paste, pressing down and adjusting the position of the first heat sink block 22 until the infrared laser chip 21 is positioned on the central line of the base 1; placing the base 1 into an oven for baking, and connecting the infrared laser chip 21 and the heat sink block I22 with an electrode pin I11 respectively by using gold wires; wherein the baking temperature is 90 ℃ and the baking time is 75 min;

s6: taking the base 1 processed in the step S5, dispensing silver paste on the second notch 132 of the base 1, taking the second heat sink block 32, adhering one side, far away from the red light laser chip 31, of the second heat sink block 32 to the silver paste, pressing down and adjusting the position of the second heat sink block 32 until the red light laser chip 31 is positioned on the central line of the base 1; placing the base 1 into an oven for baking, and then respectively connecting the red light laser chip 31 and the second heat sink block 32 with the second electrode pin 12 by using gold wires; wherein the baking temperature is 90 ℃ and the baking time is 75 min;

s7: taking the base 1 obtained after the processing of S6, electrifying the red light chip to 100mA, fixing the infrared focusing fiber 24 above the red light laser chip 31 by using glue under the CCD camera, and adjusting the position of the infrared focusing fiber 24 until the light spots are uniformly focused into a square or a square;

s8: and finishing the operation to obtain the composite laser.

Example 2:

s1: preparing a base 1, wherein a placing groove 13 is arranged above the base 1, two ends of the placing groove 13 are a first notch 131 and a second notch 132, and two sides of the placing groove 13, which are close to the first notch 131 and the second notch 132, are respectively provided with a first electrode pin 11 and a second electrode pin 12; preparing components of the red light module 3 and the infrared laser module 2, and checking the running condition of each device;

s2: assembling the base 1 into an assembly fixture, dispensing silver paste on one side of the base 1 close to the first notch 131, and bonding the infrared photoelectric chip 23 on the silver paste; dispensing silver paste on one side of the base 1 close to the second notch 132, and bonding the red photoelectric chip 33 on the silver paste; then placing the mixture into an oven for baking and cooling; wherein the baking temperature is 100 ℃, and the baking time is 80 min;

s3: taking the cooled base 1, connecting the infrared photoelectric chip 23 with one electrode pin I11 by using a gold thread, and connecting the red photoelectric chip 33 with one electrode pin II 12 by using a gold thread to obtain the base 1 packaged with the red photoelectric chip 33 and the infrared photoelectric chip 23;

s4: taking the first heat sink block 22, placing the first heat sink block 22 on a heating platform, heating at 350 ℃ until a solder area on the upper surface of the first heat sink block 22 is melted, placing the infrared laser chip 21 on the upper surface of the first heat sink block 22, keeping the heating temperature, heating for 30s, and naturally cooling to obtain the first heat sink block 22 bonded with the infrared laser chip 21; taking the second heat sinking block 32, placing the first heat sinking block 22 on a heating platform, heating at 300 ℃ until a solder area on the upper surface of the second heat sinking block 32 is melted, placing the red laser chip 31 on the upper surface of the second heat sinking block 32, keeping the heating temperature, heating for 10s, and naturally cooling to obtain the second heat sinking block 32 bonded with the infrared laser chip 21;

s5: taking the base 1 processed in the step S3, dispensing silver paste on the first notch 131 of the base 1, taking the first heat sink block 22, adhering one side of the first heat sink block 22, which is far away from the infrared laser chip 21, to the silver paste, pressing down and adjusting the position of the first heat sink block 22 until the infrared laser chip 21 is positioned on the central line of the base 1; placing the base 1 into an oven for baking, and connecting the infrared laser chip 21 and the heat sink block I22 with an electrode pin I11 respectively by using gold wires; wherein the baking temperature is 100 ℃, and the baking time is 80 min;

s6: taking the base 1 processed in the step S5, dispensing silver paste on the second notch 132 of the base 1, taking the second heat sink block 32, adhering one side, far away from the red light laser chip 31, of the second heat sink block 32 to the silver paste, pressing down and adjusting the position of the second heat sink block 32 until the red light laser chip 31 is positioned on the central line of the base 1; placing the base 1 into an oven for baking, and then respectively connecting the red light laser chip 31 and the second heat sink block 32 with the second electrode pin 12 by using gold wires; wherein the baking temperature is 100 ℃, and the baking time is 80 min;

s7: taking the base 1 obtained after the processing of S6, electrifying the red light chip to 100mA, fixing the infrared focusing fiber 24 above the red light laser chip 31 by using glue under the CCD camera, and adjusting the position of the infrared focusing fiber 24 until the light spots are uniformly focused into a square or a square;

s8: and finishing the operation to obtain the composite laser.

Example 3:

s1: preparing a base 1, wherein a placing groove 13 is arranged above the base 1, two ends of the placing groove 13 are a first notch 131 and a second notch 132, and two sides of the placing groove 13, which are close to the first notch 131 and the second notch 132, are respectively provided with a first electrode pin 11 and a second electrode pin 12; preparing components of the red light module 3 and the infrared laser module 2, and checking the running condition of each device;

s2: assembling the base 1 into an assembly fixture, dispensing silver paste on one side of the base 1 close to the first notch 131, and bonding the infrared photoelectric chip 23 on the silver paste; dispensing silver paste on one side of the base 1 close to the second notch 132, and bonding the red photoelectric chip 33 on the silver paste; then placing the mixture into an oven for baking and cooling; wherein the baking temperature is 105 ℃, and the baking time is 85 min;

s3: taking the cooled base 1, connecting the infrared photoelectric chip 23 with one electrode pin I11 by using a gold thread, and connecting the red photoelectric chip 33 with one electrode pin II 12 by using a gold thread to obtain the base 1 packaged with the red photoelectric chip 33 and the infrared photoelectric chip 23;

s4: taking the first heat sink block 22, placing the first heat sink block 22 on a heating platform, heating at 355 ℃ until a solder area on the upper surface of the first heat sink block 22 is melted, placing the infrared laser chip 21 on the upper surface of the first heat sink block 22, keeping the heating temperature, heating for 35s, and naturally cooling to obtain the first heat sink block 22 bonded with the infrared laser chip 21; taking the second heat sinking block 32, placing the first heat sinking block 22 on a heating platform, heating at 310 ℃ until a solder area on the upper surface of the second heat sinking block 32 is melted, placing the red laser chip 31 on the upper surface of the second heat sinking block 32, keeping the heating temperature, heating for 15s, and naturally cooling to obtain the second heat sinking block 32 bonded with the infrared laser chip 21;

s5: taking the base 1 processed in the step S3, dispensing silver paste on the first notch 131 of the base 1, taking the first heat sink block 22, adhering one side of the first heat sink block 22, which is far away from the infrared laser chip 21, to the silver paste, pressing down and adjusting the position of the first heat sink block 22 until the infrared laser chip 21 is positioned on the central line of the base 1; placing the base 1 into an oven for baking, and connecting the infrared laser chip 21 and the heat sink block I22 with an electrode pin I11 respectively by using gold wires; wherein the baking temperature is 110 ℃, and the baking time is 85 min;

s6: taking the base 1 processed in the step S5, dispensing silver paste on the second notch 132 of the base 1, taking the second heat sink block 32, adhering one side, far away from the red light laser chip 31, of the second heat sink block 32 to the silver paste, pressing down and adjusting the position of the second heat sink block 32 until the red light laser chip 31 is positioned on the central line of the base 1; placing the base 1 into an oven for baking, and then respectively connecting the red light laser chip 31 and the second heat sink block 32 with the second electrode pin 12 by using gold wires; wherein the baking temperature is 110 ℃, and the baking time is 85 min;

s7: taking the base 1 obtained after the processing of S6, electrifying the red light chip to 100mA, fixing the infrared focusing fiber 24 above the red light laser chip 31 by using glue under the CCD camera, and adjusting the position of the infrared focusing fiber 24 until the light spots are uniformly focused into a square or a square;

s8: and finishing the operation to obtain the composite laser.

And (4) conclusion: the composite laser for laser light moxibustion and the packaging method have the advantages that the structural design is reasonable, the process is simple, the structure and the process of the laser are greatly simplified, the semiconductor is used as a light source while the cost is reduced, multiple light sources are integrated into one laser, the composite laser is suitable for multiple application environments, the size is small and exquisite, the carrying is convenient, the composite laser can directly act on a part needing to be treated in a short distance, the light moxibustion effect is guaranteed, and the practicability is high.

It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.