阅读说明：本技术 一种多单管半导体激光器双面冷却封装结构 (Double-sided cooling packaging structure of multi-single-tube semiconductor laser ) 是由 石琳琳 王娇娇 马晓辉 邹永刚 徐莉 李岩 金亮 张贺 李卫岩 于 2020-06-10 设计创作，主要内容包括：本发明属于激光器技术领域,特别涉及一种多单管半导体激光器双面冷却封装结构,解决了多单管半导体激光器封装中的散热问题。一种多单管半导体激光器双面冷却封装结构,包括基础热沉,基础热沉上设置有绝缘热沉,绝缘热沉上设置有次级热沉,次级热沉之间为半导体激光器。通过在单管半导体激光器的N面和P面焊接次级热沉材料,使得半导体激光器产生的热量由传统的P面单向传导或N面单向传导改为P面和N面双向传导,增加了散热通道,提高了散热效率,高效地降低了有源区的结温,提高了激光器的输出功率和光束质量,通过将单管半导体激光器竖直放置,缩小了单管与单管之间的间距,节省了空间,使得器件更加小型化。(The invention belongs to the technical field of lasers, and particularly relates to a double-sided cooling packaging structure of a multi-single-tube semiconductor laser, which solves the heat dissipation problem in packaging of the multi-single-tube semiconductor laser. The utility model provides a two-sided cooling packaging structure of many single tube semiconductor laser, includes basic heat sink, is provided with insulating heat sink on the basic heat sink, is provided with secondary heat sink on the insulating heat sink, is the semiconductor laser between the secondary heat sink. The secondary heat sink materials are welded on the N surface and the P surface of the single-tube semiconductor laser, so that heat generated by the semiconductor laser is changed into P surface and N surface bidirectional conduction from traditional P surface unidirectional conduction or N surface unidirectional conduction, a heat dissipation channel is increased, the heat dissipation efficiency is improved, the junction temperature of an active area is efficiently reduced, the output power and the beam quality of the laser are improved, the single-tube semiconductor laser is vertically placed, the distance between a single tube and a single tube is reduced, the space is saved, and the device is more miniaturized.)

1. The utility model provides a two-sided cooling packaging structure of many single tube semiconductor laser which characterized in that:

the heat sink comprises a basic heat sink (9) and an insulating heat sink (4), wherein the insulating heat sink (4) is arranged on the basic heat sink (9), and at least two secondary heat sinks are arranged on the insulating heat sink (4);

and a semiconductor laser is arranged between the two adjacent secondary heat sinks.

2. A double-sided cooling package structure of a multi-single tube semiconductor laser as claimed in claim 1, wherein:

the insulating heat sink (4) is welded on the basic heat sink (9).

3. A double-sided cooling package structure of a multi-single tube semiconductor laser as claimed in claim 2, wherein:

the secondary heat sink is welded on the insulating heat sink (4).

4. A double-sided cooling package structure of a multi-single tube semiconductor laser according to any one of claims 1-3, characterized in that:

the basic heat sink (9) is made of an oxygen-free copper material.

5. The double-sided cooling package structure of a multi-single tube semiconductor laser as claimed in claim 4, wherein:

the insulating heat sink (4) is made of ALN material.

6. The double-sided cooling package structure of a multi-single tube semiconductor laser as claimed in claim 5, wherein:

the secondary heat sink is made of copper-tungsten material, and can also be made of diamond or copper-based diamond material.

7. The double-sided cooling package structure of a multi-single tube semiconductor laser as claimed in claim 6, wherein:

the semiconductor laser is an edge-emitting single-tube semiconductor laser.

8. A double-sided cooling package structure of a multi-single tube semiconductor laser as claimed in claim 7, wherein:

the edge-emitting semiconductor laser adopts a COS packaging structure.

9. The double-sided cooling package structure of a multi-single tube semiconductor laser as claimed in claim 4, wherein:

the secondary heat sinks comprise a first secondary heat sink (5), a second secondary heat sink (6), a third secondary heat sink (7) and a fourth secondary heat sink (8).

10. A double-sided cooling package structure of a multi-single tube semiconductor laser as claimed in claim 9, wherein:

the semiconductor laser comprises a first semiconductor laser (1), a second semiconductor laser (2) and a third semiconductor laser (3);

the P surface of the third semiconductor laser (3) is welded with the first secondary heat sink (5), and the N surface is welded with the second secondary heat sink (6); the P surface of the semiconductor laser is welded with the second secondary heat sink (6), and the N surface of the semiconductor laser is welded with the third secondary heat sink (7); the P surface of the semiconductor laser is welded with the third secondary heat sink (7), and the N surface of the semiconductor laser is welded with the fourth secondary heat sink (8).

Technical Field

The invention belongs to the technical field of lasers, and particularly relates to a double-sided cooling packaging structure of a multi-single-tube semiconductor laser.

Background

The semiconductor laser has the advantages of high electro-optic conversion efficiency, high reliability, long service life and the like, and is widely applied to the fields of laser ranging, laser communication, laser processing and the like. In order to obtain a semiconductor laser with high output power and high brightness to be suitable for various application fields, the light source is generally selected from a single-tube semiconductor laser, a bar semiconductor laser and a stacked-array semiconductor laser. The bar/stacked array laser causes the phenomenon that the temperature of the middle light-emitting unit is higher than that of the edge light-emitting unit due to thermal crosstalk among the light-emitting units, so that a smile effect is generated, and because the quality of light beams output by the bar/stacked array laser is not ideal, a light beam shaping system is complex, the coupling efficiency is also reduced in shaping, so that the output power and the reliability of the laser are influenced. On the other hand, the bar/stacked array laser needs to use a microchannel heat sink for heat dissipation due to high thermal resistance, and microchannels generally work in special liquid, are easy to block and are not easy to maintain.

Compared with a bar/stacked array laser, the single-tube semiconductor laser is free from the influence of thermal crosstalk due to the fact that the single-tube semiconductor laser is provided with the independent light emitting units, the unit failure characteristics are independent, the light emitting units cannot be mutually influenced, and the single-tube semiconductor laser has replaceability. The output power obtained by combining a plurality of single-tube semiconductor lasers is tens of times that of a single laser. The multi-single-tube semiconductor laser has the advantages of low driving current, good light beam quality, good heat dissipation, high optical fiber coupling efficiency, high brightness and the like, and can be used as a light source of the semiconductor laser. At present, a plurality of single-tube semiconductor lasers mostly use stepped heat sinks for heat dissipation, due to the fact that the distance between single tubes is too large, the size of a lens in later-stage optical fiber coupling design is large, the size of the whole system is too large, the heat dissipation path is single, and along with the increase of output power of the single-tube semiconductor lasers, the simple packaging mode cannot meet the requirements. Therefore, the problems of heat dissipation and space volume of the multiple single-tube lasers are solved.

Disclosure of Invention

In order to solve the problems in the background art, the invention provides a double-sided cooling packaging structure of a multi-single-tube semiconductor laser, which solves the problems of heat dissipation and space volume of the multi-single-tube semiconductor laser in packaging.

The technical scheme for realizing the functions is as follows: a double-sided cooling packaging structure of a multi-single-tube semiconductor laser is characterized in that:

the heat sink comprises a basic heat sink and an insulating heat sink, wherein the insulating heat sink is arranged on the basic heat sink, and at least two secondary heat sinks are arranged on the insulating heat sink;

and a semiconductor laser is arranged between the two adjacent secondary heat sinks.

Further, the insulating heat sink is welded on the basic heat sink.

Further, the secondary heat sink is welded on the insulating heat sink.

Further, the basic heat sink is made of an oxygen-free copper material.

Furthermore, the insulating heat sink is made of an ALN material.

Further, the secondary heat sink is made of copper-tungsten material, and can also be made of diamond or copper-based diamond material.

Further, the semiconductor laser is an edge-emitting single-tube semiconductor laser.

Furthermore, the edge-emitting semiconductor laser adopts a COS packaging structure.

Further, the secondary heat sinks include a first secondary heat sink, a second secondary heat sink, a third secondary heat sink, and a fourth secondary heat sink.

Further, the semiconductor laser includes a first semiconductor laser, a second semiconductor laser, and a third semiconductor laser;

the P surface of the third semiconductor laser is welded with the first secondary heat sink, and the N surface of the third semiconductor laser is welded with the second secondary heat sink; the P surface of the semiconductor laser is welded with the second secondary heat sink, and the N surface of the semiconductor laser is welded with the third secondary heat sink; the P surface of the semiconductor laser is welded with the third secondary heat sink, and the N surface is welded with the fourth secondary heat sink.

The invention has the advantages that:

the invention provides a double-sided cooling packaging structure of a multi-single-tube semiconductor laser, which is characterized in that secondary heat sink materials are welded on the N surface and the P surface of a single-tube semiconductor laser, so that heat generated by the semiconductor laser can be conducted in two directions, a heat dissipation channel is increased, and the heat dissipation capacity of a device is improved. The heat dissipation structure is simple, optical elements required for beam shaping are few, and the difficulty of the packaging process is effectively reduced. Compared with the traditional multi-single-tube packaging, the single-tube semiconductor laser is vertically arranged, so that the distance between single tubes is shortened, the space is saved, and the device is more miniaturized.

Drawings

Fig. 1 is a schematic diagram of a double-sided cooling package structure of a multi-single-tube semiconductor laser according to the present invention.

The reference numbers in the figures illustrate: 1-a first semiconductor laser, 2-a second semiconductor laser, 3-a third semiconductor laser, 4-an insulating heat sink, 5-a first secondary heat sink, 6-a second secondary heat sink, 7-a third secondary heat sink, 8-a fourth secondary heat sink and 9-a basic heat sink.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention.

Referring to fig. 1, the double-sided cooling packaging structure of the multi-single-tube semiconductor laser comprises a basic heat sink 9, wherein an insulating heat sink 4 is arranged on the basic heat sink 9, and the insulating heat sink 4 is welded with the basic heat sink 9. And secondary heat sinks are arranged on the insulating heat sink 4 and comprise a first secondary heat sink 5, a second secondary heat sink 6, a third secondary heat sink 7 and a fourth secondary heat sink 8. The insulating heat sink 4 is respectively welded with the first secondary heat sink 5, the second secondary heat sink 6, the third secondary heat sink 7 and the fourth secondary heat sink 8.

And a third semiconductor laser 3 is arranged between the first secondary heat sink 5 and the second secondary heat sink 6, the P surface of the third semiconductor laser 3 is welded with the first secondary heat sink 5, and the N surface of the third semiconductor laser 3 is welded with the second secondary heat sink 6. A second semiconductor laser 2 is arranged between the second secondary heat sink 6 and the third secondary heat sink 7, the P surface of the second semiconductor laser 2 is welded with the second secondary heat sink 6, and the N surface of the second semiconductor laser 2 is welded with the third secondary heat sink 7. A first semiconductor laser 1 is arranged between the third secondary heat sink 7 and the fourth secondary heat sink 8, the P surface of the first semiconductor laser 1 is welded with the third secondary heat sink 7, and the N surface of the first semiconductor laser 1 is welded with the fourth secondary heat sink 8.

The basic heat sink 9 is oxygen-free copper, and the first secondary heat sink 5, the second secondary heat sink 6, the third secondary heat sink 7 and the fourth secondary heat sink 8 are made of copper-tungsten materials or diamond or copper-based diamond materials. The insulating heat sink 4 is made of ALN material, the semiconductor laser is an edge-emitting single-tube semiconductor laser, and the edge-emitting semiconductor laser adopts a COS packaging structure.

By welding secondary heat sink materials on the N surface and the P surface of the single-tube semiconductor laser, heat generated by the semiconductor laser is changed from conventional P surface one-way conduction or N surface one-way conduction into two-way conduction, a heat dissipation channel is increased, heat dissipation efficiency is improved, and junction temperature of an active region is efficiently reduced. The heat dissipation structure is simple, optical elements required for beam shaping are few, the difficulty of the packaging process is effectively reduced, and compared with the traditional single-tube beam combination of a plurality of heat sinks, the space is saved, and the volume is smaller.

The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures or equivalent processes performed by the present specification and the accompanying drawings, or directly or indirectly applied to other related system fields, are included in the scope of the present invention.