阅读说明：本技术 半导体激光装置 (Semiconductor laser device ) 是由 田尻浩之 于 2018-12-27 设计创作，主要内容包括：本发明提供一种半导体激光装置,其包括：半导体激光元件；支承所述半导体激光元件的基体；和配线部,其形成于所述基体,构成向所述半导体激光元件去的导通路径。所述基体具有：朝向该基体的厚度方向上的一侧且搭载所述半导体激光元件的搭载面；和相对于所述半导体激光元件位于与所述厚度方向成直角的第1方向上的一侧的出射部。来自所述半导体激光元件的光通过所述出射部而出射。(The present invention provides a semiconductor laser device, comprising: a semiconductor laser element; a base supporting the semiconductor laser element; and a wiring section formed on the base body and constituting a conduction path to the semiconductor laser element. The base body has: a mounting surface facing one side of the substrate in a thickness direction and on which the semiconductor laser element is mounted; and a light emitting portion located on one side in a1 st direction perpendicular to the thickness direction with respect to the semiconductor laser element. The light from the semiconductor laser element is emitted through the emission portion.)

1. A semiconductor laser device, comprising:

a semiconductor laser element;

a base supporting the semiconductor laser element; and

a wiring section formed on the substrate and constituting a conduction path to the semiconductor laser element,

the base body has: a mounting surface facing one side of the substrate in a thickness direction and on which the semiconductor laser element is mounted; and an emission portion located on one side in a1 st direction perpendicular to the thickness direction with respect to the semiconductor laser element,

the light from the semiconductor laser element is emitted through the emission portion.

2. A semiconductor laser device as claimed in claim 1, wherein:

the base body has an opening located on the one side in the thickness direction with respect to the semiconductor laser element.

3. A semiconductor laser device according to claim 2, wherein:

the emission portion includes a1 st lid portion that transmits light from the semiconductor laser element.

4. A semiconductor laser device according to claim 3, wherein:

the 1 st lid section has a lens section for refracting light from the semiconductor laser element.

5. A semiconductor laser device according to any one of claims 2 to 4, wherein:

there is also a2 nd lid portion closing the opening.

6. A semiconductor laser device according to any one of claims 2 to 5, wherein:

the base body has a mounting surface facing the thickness direction,

the wiring portion has a mounting terminal portion formed on the mounting surface.

7. The semiconductor laser device according to claim 6, wherein:

the mounting surface faces the one side in the thickness direction.

8. The semiconductor laser device according to claim 6, wherein:

the mounting surface faces the other side in the thickness direction.

9. A semiconductor laser device according to claim 8, wherein:

the wiring section has an element mounting section formed on the mounting surface and mounting the semiconductor laser element.

10. A semiconductor laser device according to claim 9, wherein:

the base body has: a rear end surface facing the other side in the 1 st direction and reaching the mounting surface; and at least one rear groove portion recessed from the rear end surface and reaching the mounting surface,

the wiring section has at least one rear connection section formed in the rear groove section and electrically connecting the semiconductor laser element and the mounting terminal section.

11. A semiconductor laser device according to claim 10, wherein:

the base body has: a bottom portion located on the other side in the thickness direction with respect to the mounting surface; and a base portion that protrudes from the bottom portion toward the one side in the thickness direction and constitutes the mounting surface.

12. A semiconductor laser device according to claim 10, wherein:

the semiconductor laser element includes a semiconductor layer that functions to emit light and a sub-mount that supports the semiconductor layer.

13. A semiconductor laser device according to claim 11 or 12, wherein:

the base has an inner end surface located on the other side in the 1 st direction with respect to the semiconductor laser element and inclined with respect to the thickness direction.

14. A semiconductor laser device according to any one of claims 11 to 13, wherein:

and a lead wire is also arranged on the base,

the wiring portion has at least 1 wire bonding portion located on the other side in the 1 st direction with respect to the semiconductor laser element and located on the one side in the thickness direction with respect to the mounting surface,

the wire is connected to the semiconductor laser element and the wire bonding portion.

15. A semiconductor laser device according to claim 14, wherein:

the semiconductor laser element has a plurality of waveguide paths arranged in a2 nd direction perpendicular to both the 1 st direction and the thickness direction, and each of the plurality of waveguide paths independently emits light to one side in the 1 st direction.

16. A semiconductor laser device according to claim 15, wherein:

the at least 1 rear groove portion includes a plurality of rear groove portions arranged in the 2 nd direction,

the at least 1 wire bond includes a plurality of wire bonds arranged in the 2 nd direction,

the at least 1 rear connection part includes a plurality of rear connection parts formed at the plurality of rear groove parts, respectively,

the wiring portion has a plurality of 2 nd band-shaped portions, each 2 nd band-shaped portion electrically connecting 1 of the plurality of wire bonding portions and 1 of the plurality of rear connection portions to each other,

the plurality of 2 nd strip portions are arranged in the 2 nd direction, and each extend in the 1 st direction.

17. The semiconductor laser device according to any one of claims 1 to 16, wherein:

and a temperature detection element supported by the base body and electrically connected to the wiring portion.

Technical Field

The present invention relates to a semiconductor laser device.

Background

Semiconductor laser devices are widely used as light source devices for various electronic apparatuses. For example, japanese patent application laid-open No. 2017-147301 discloses an example of a conventional semiconductor laser device. The semiconductor laser device disclosed in this document includes a disk-shaped base portion and a heat dissipation portion provided on an upper surface of the base portion. The heat dissipation unit is mounted with a semiconductor laser element. 2 leads extend from the lower surface of the base portion. In the conventional semiconductor laser device, the leads are mounted on the circuit board in a state of being inserted into holes formed in the circuit board.

Disclosure of Invention

Technical problem to be solved by the invention

Unlike the above-described system, a surface-mount semiconductor laser device may be required depending on the type of electronic equipment.

An object of the present invention is to provide a semiconductor laser device capable of surface mounting.

Means for solving the problems

The present invention provides a semiconductor laser device, comprising: a semiconductor laser element; a base supporting the semiconductor laser element; and a wiring section formed on the base body and constituting a conduction path to the semiconductor laser element. The base body has: a mounting surface facing one side of the substrate in a thickness direction and on which the semiconductor laser element is mounted; and a light emitting portion located on one side in a1 st direction perpendicular to the thickness direction with respect to the semiconductor laser element. The light from the semiconductor laser element is emitted through the emission portion.

Effects of the invention

According to the semiconductor laser device of the present invention, surface mounting can be realized.

Other features and advantages of the present invention will become more apparent from the following detailed description, which proceeds with reference to the accompanying drawings.

Drawings

Fig. 1 is a plan view showing a semiconductor laser device according to embodiment 1.

Fig. 2 is a front view showing a semiconductor laser device according to embodiment 1.

Fig. 3 is a side view showing the semiconductor laser device according to embodiment 1.

Fig. 4 is a bottom view showing the semiconductor laser device according to embodiment 1.

Fig. 5 is a sectional view taken along line V-V of fig. 1.

Fig. 6 is an enlarged cross-sectional view showing a part of the semiconductor laser device according to embodiment 1.

Fig. 7 is a sectional view taken along line VII-VII of fig. 1.

Fig. 8 is a plan view showing a base of the semiconductor laser device according to embodiment 1.

Fig. 9 is a plan view showing a base of the semiconductor laser device according to embodiment 1.

Fig. 10 is a plan view showing a base of the semiconductor laser device according to embodiment 1.

Fig. 11 is an enlarged cross-sectional view illustrating a1 st modification of the semiconductor laser device according to embodiment 1.

Fig. 12 is an enlarged cross-sectional view illustrating a2 nd modification of the semiconductor laser device according to embodiment 1.

Fig. 13 is a cross-sectional view showing a3 rd modification of the semiconductor laser device according to embodiment 1.

Fig. 14 is a cross-sectional view showing a4 th modification of the semiconductor laser device according to embodiment 1.

Fig. 15 is a cross-sectional view showing a5 th modification of the semiconductor laser device according to embodiment 1.

Fig. 16 is a plan view showing a6 th modification of the semiconductor laser device according to embodiment 1.

Fig. 17 is a sectional view taken along line XVII-XVII of fig. 16.

Fig. 18 is a plan view showing the semiconductor laser device according to embodiment 2.

Fig. 19 is a plan view illustrating a base of the semiconductor laser device according to embodiment 2.

Fig. 20 is a plan view illustrating a base of the semiconductor laser device according to embodiment 2.

Fig. 21 is a plan view showing the semiconductor laser device according to embodiment 3.

Fig. 22 is a side view showing a semiconductor laser device according to embodiment 3.

Fig. 23 is a bottom view showing the semiconductor laser device according to embodiment 3.

Fig. 24 is a sectional view taken along line XXIV-XXIV of fig. 21.

Fig. 25 is a plan view illustrating a base of the semiconductor laser device according to embodiment 3.

Fig. 26 is a plan view illustrating a base of the semiconductor laser device according to embodiment 3.

Fig. 27 is a plan view illustrating a base of the semiconductor laser device according to embodiment 3.

Fig. 28 is a cross-sectional view showing a1 st modification of the semiconductor laser device according to embodiment 3.

Fig. 29 is a plan view showing the semiconductor laser device according to embodiment 4.

Fig. 30 is a bottom view showing the semiconductor laser device according to embodiment 4.

Fig. 31 is a cross-sectional view taken along line XXXI-XXXI of fig. 29.

Fig. 32 is a cross-sectional view taken along line XXXII-XXXII of fig. 29.

Fig. 33 is a plan view showing the semiconductor laser device according to embodiment 5.

Fig. 34 is a front view showing a semiconductor laser device according to embodiment 5.

FIG. 35 is a cross-sectional view taken along line XXXV-XXXV of FIG. 33.

Fig. 36 is a plan view showing the semiconductor laser device according to embodiment 6.

Fig. 37 is a bottom view showing the semiconductor laser device according to embodiment 6.

Fig. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII of fig. 36.

Fig. 39 is a plan view showing a semiconductor laser device according to embodiment 7.

Fig. 40 is a bottom view showing the semiconductor laser device according to embodiment 7.

Detailed Description

Hereinafter, a detailed description will be given based on the embodiments of the present invention with reference to the drawings.

Fig. 1 to 10 show a semiconductor laser device a1 according to embodiment 1 of the present invention. The semiconductor laser device a1 includes a base 1, a wiring section 5, a semiconductor laser element 6, a plurality of through-wirings 69, a1 st lid 7, and a2 nd lid 8.

In the following description, the z direction corresponds to the thickness direction of the substrate 1. The x-direction corresponds to the 1 st direction, and the y-direction corresponds to the 2 nd direction. In the z direction, the upper side in the drawing corresponds to "one side", and the lower side corresponds to "the other side". In the x direction, a side corresponding to one side is sometimes referred to as "front side", and a side corresponding to the other side is sometimes referred to as "rear side". However, the terms "one side", "the other side", "front" and "rear" are used for convenience of description, and are not intended to limit the structure of the semiconductor laser device of the present invention.

The terms "1 st", "2 nd", "3 rd" and the like in the present invention are merely terms for distinguishing elements, and are not intended to give an order to the elements.

The substrate 1 supports a semiconductor laser element 6. At least the surface of the substrate 1 is made of an insulating material. For example, as shown in fig. 1 to 5, the substrate 1 has a main surface 11, a back surface 12, a front end surface 13, a rear end surface 14, a pair of side surfaces 15, an opening 17, an emission portion 18, a plurality of rear groove portions 161, a plurality of front groove portions 163, and a front recess 171. In the case of taking an example of the size of the substrate 1, the size in the x direction is about 2.0mm to 7.0mm, the size in the y direction is about 1.5mm to 7.0mm, and the size in the z direction is about 0.7mm to 2.5mm, but the size and shape of the substrate 1 are not limited to this example.

The main surface 11 is a surface facing one side (upper side) in the z direction. In the present embodiment, the main surface 11 corresponds to a mounting surface. In the illustrated example, the main surface 11 is perpendicular to the z direction. The main surface 11 is substantially rectangular.

The back surface 12 is located on the opposite side of the main surface 11 and faces the other side (lower side) in the z direction. In the illustrated example, the back surface 12 is at right angles to the z-direction. The back surface 12 is generally rectangular in shape.

The front end surface 13 is a surface facing one side (front side) in the x direction, and connects the main surface 11 and the back surface 12. In the illustrated example, the front end surface 13 is perpendicular to the x direction.

The rear end face 14 is a face facing the other side (rear side) in the x direction, and connects the main face 11 and the rear face 12. In the illustrated example, the rear end face 14 is perpendicular to the x direction.

The pair of side surfaces 15 connect the main surface 11 and the rear surface 12, and connect the front end surface 13 and the rear end surface 14. The pair of side surfaces 15 are spaced apart from each other in the y direction. In the illustrated example, each side surface 15 is rectangular to the y direction and has a substantially rectangular shape.

The opening 17 is a portion that opens the internal space defined by the base 1 to one side (upper side) in the z direction. In the illustrated example, the sheet is substantially rectangular in shape when viewed in the z direction (in a plan view) (see fig. 10). The opening 17 is disposed offset to one side (front side) in the x direction. By providing the opening 17, the main surface 11 has a rectangular ring shape (closed frame shape) when viewed in the z direction.

The emission portion 18 is a portion for emitting the laser light from the semiconductor laser element 6 to one side (front side) in the x direction. In the illustrated example, the internal space defined by the base 1 is open to one side (front side) in the x direction through the emission portion 18. The emission part 18 has a rectangular shape when viewed in the x direction, for example (see fig. 2). Further, by providing the emission portion 18, the front end face 13 has a rectangular ring shape when viewed in the x direction.

The rear grooves 161 are recessed from the rear end surface 14 (see fig. 1) and extend in the z direction (see fig. 3). Each rear groove 161 reaches the main surface (mounting surface) 11. In the illustrated example, each rear groove 161 reaches the rear surface 12. The sectional shape of the rear groove 161 is a semicircular shape in the illustrated example, and the present invention is not limited thereto. The plurality of rear grooves 161 are arranged at intervals in the y direction.

As shown in fig. 1, the plurality of front grooves 163 are formed at the boundary portions between the pair of side surfaces 15 and the front end surface 13. Each front groove 163 extends along the z direction and reaches the main surface 11 and the back surface 12. The sectional shape of the rear groove 161 is a quarter circle in the illustrated example, but the present invention is not limited thereto.

As shown in fig. 2 and 5, front recess 171 is recessed from front end surface 13 toward the other side (rear side) in the x direction, and surrounds emission portion 18. The front recess 171 has a rectangular ring shape as viewed in the x direction. The front recess 171 is a portion for providing the 1 st lid 7.

As shown in fig. 3, the substrate 1 includes a plurality of layers. In the illustrated example, the substrate 1 includes a1 st layer 2, a2 nd layer 3, and a3 rd layer 4. The 1 st layer 2, the 2 nd layer 3, and the 3 rd layer 4 are stacked in the z direction. The 1 st, 2 nd, 3 rd and 3 rd layers 2, 3, 4 are made of, for example, ceramics such as alumina and aluminum nitride, but the present invention is not limited thereto. Further, each layer itself may be composed of a plurality of ceramic layers. In fig. 2, 3, 5, and 7, a chain line indicates a boundary between adjacent ceramic layers.

The 1 st layer 2 is located lowermost in the z direction. The layer 12 includes a1 st main surface 21, a1 st rear surface 22, a1 st front end surface 23, a1 st rear end surface 24, a pair of 1 st side surfaces 25, a1 st main portion 210, a pair of 1 st side frame portions 220, a1 st front frame portion 230, a base portion 240, a bottom portion 250, a plurality of 1 st rear groove portions 261, and a plurality of 1 st front groove portions 263.

The 1 st main surface 21 is a surface facing the z direction upper side. In the present embodiment, the 1 st main surface 21 corresponds to a mounting surface. In the illustrated example, the 1 st main surface 21 is perpendicular to the z direction.

The 1 st back surface 22 is located on the opposite side of the 1 st main surface 21 and faces downward in the z direction. In the illustrated example, the 1 st back surface 22 is perpendicular to the z-direction. The 1 st back surface 22 constitutes the back surface 12.

The 1 st front end surface 23 is a surface facing one side (front side) in the x direction, and connects the 1 st main surface 21 and the 1 st back surface 22. In the illustrated example, the 1 st front end surface 23 is perpendicular to the x direction. The 1 st front end surface 23 constitutes a part of the front end surface 13.

The 1 st rear end surface 24 is a surface facing the other side (rear side) in the x direction, and connects the 1 st main surface 21 and the 1 st rear surface 22. In the illustrated example, the 1 st rear end surface 24 is perpendicular to the x direction. The 1 st rear end surface 24 forms a portion of the rear end surface 14.

The pair of 1 st side surfaces 25 connect the 1 st main surface 21 and the 1 st back surface 22, and connect the 1 st front end surface 23 and the 1 st rear end surface 24. The pair of 1 st side surfaces 25 face the y direction, respectively. In the illustrated example, the 1 st side 25 is at right angles to the y-direction. The 1 st side 25 forms a part of the side 15.

The 1 st main portion 210 is a portion of the 1 st layer 2 located on the x-direction rear side. In the illustrated example, the 1 st main section 210 has a substantially rectangular shape when viewed in the z direction. The thickness of the 1 st main portion 210 is the same as the maximum thickness of the 1 st layer 2.

The pair of 1 st side frame portions 220 are portions extending from both y-direction sides of the 1 st main portion 210 to the x-direction front side. The thickness of the 1 st side frame portion 220 is the same as the maximum thickness of the 1 st layer 2.

The 1 st front frame portion 230 connects one end of the pair of 1 st side frame portions 220 in the x direction and extends in the y direction. The pair of 1 st side frame portion 220 and the 1 st front frame portion 230 constitute a frame-shaped portion. A recess 231 is formed in the 1 st front frame portion 230. The recessed portion 231 is a portion in which the dimension in the z direction of the 1 st front frame portion 230 is locally reduced, and constitutes a part of the front recessed portion 171.

The base portion 240 extends from the 1 st main portion 210 to one side (front side) in the x direction, and in the illustrated example, has a substantially rectangular shape when viewed in the z direction. The base portion 240 is spaced apart from the pair of 1 st side frame portions 220 and the 1 st front frame portion 230. The semiconductor laser element 6 is mounted on the base portion 240.

The bottom portion 250 is a portion located on the other side (lower side) in the z direction of the 1 st main surface 21. The bottom portion 250 is located in a region surrounded by the pair of 1 st side frame portion 220, the 1 st front frame portion 230, and the base portion 240 when viewed from the z direction. The thickness of the bottom 250 is smaller than the maximum thickness of the layer 1 in the z-direction 2.

The 1 st rear groove portions 261 are recessed from the 1 st rear end surface 24 and extend in the z direction. The 1 st rear groove portion 261 reaches the 1 st main surface 21 and the 1 st rear surface 22. The sectional shape of the 1 st rear groove 261 is not particularly limited, and in the illustrated example, is a semicircular shape. The 1 st rear groove 261 is arranged at intervals in the y direction. The plurality of 1 st rear groove portions 261 constitute a part of each of the plurality of rear groove portions 161.

The 1 st front groove 263 is formed at the boundary between the 1 st side surface 25 and the 1 st front end surface 23. The 1 st front groove 263 extends in the z direction and reaches the 1 st main surface 21 and the 1 st rear surface 22. The sectional shape of the 1 st front groove 263 is not particularly limited, and is a quarter-circle shape in the illustrated example. The 1 st front groove 263 constitutes a part of each of the front grooves 163.

The 2 nd layer 3 is laminated on one side (upper side) of the 1 st layer 2 in the z direction. The 2 nd layer 3 includes a2 nd main surface 31, a2 nd back surface 32, a2 nd front end surface 33, a2 nd rear end surface 34, a pair of 2 nd side surfaces 35, an inner end surface 36, a2 nd main portion 310, a pair of 2 nd side frame portions 320, a plurality of 2 nd rear groove portions 361, and a plurality of 2 nd front groove portions 363.

The 2 nd main surface 31 is a surface facing one side (upper side) in the z direction. In the illustrated example, the 2 nd main surface 31 is perpendicular to the z direction.

The 2 nd back surface 32 is a surface facing the other side (lower side) in the z direction, which is opposite to the side facing the 2 nd main surface 31, and faces the 1 st main surface 21 of the 1 st layer 2. In the illustrated example, the 2 nd back surface 32 is at a right angle with respect to the z-direction.

The 2 nd front end surface 33 is a surface facing one side (front side) in the x direction, and connects the 2 nd main surface 31 and the 2 nd back surface 32. In the illustrated example, the 2 nd front end surface 33 is perpendicular to the x direction. The 2 nd front end face 33 constitutes a part of the front end face 13. The 2 nd front end surface 33 includes 2 regions separated to both sides in the y direction.

The 2 nd rear end surface 34 is a surface facing the other side (rear side) in the x direction, and connects the 2 nd main surface 31 and the 2 nd rear surface 32. In the illustrated example, the 2 nd rear end surface 34 is perpendicular to the x direction. The 2 nd rear end surface 34 constitutes a part of the rear end surface 14.

The pair of 2 nd side surfaces 35 connect the 2 nd main surface 31 and the 2 nd back surface 32, and connect the 2 nd front end surface 33 and the 2 nd rear end surface 34. The pair of 2 nd side surfaces 35 face the y direction, respectively. In the illustrated example, the 2 nd side surface 35 is at right angles to the y direction. The 2 nd side 35 constitutes a part of the side 15.

The 2 nd main portion 310 is a portion of the 2 nd layer 3 located on the other side (rear side) in the x direction. In the illustrated example, the 2 nd main section 310 has a substantially rectangular shape when viewed in the z direction. The thickness of the 2 nd main portion 310 is the same as the maximum thickness of the 2 nd layer 3.

The inner end surface 36 is a surface located on one side (front side) of the 2 nd main portion 310 in the x direction. The inner end surface 36 is inclined with respect to the z direction so as to be positioned on one side (front side, left side in the drawing in fig. 6) in the x direction from one side (upper side in the drawing in fig. 6) in the z direction to the other side (lower side in the drawing in fig. 6).

The pair of 2 nd side frame portions 320 extend from both y-direction sides of the 2 nd main portion 310 to one x-direction side (front side). The thickness of the 2 nd side frame portion 320 is the same as the maximum thickness of the 2 nd layer 3.

The pair of 2 nd side frame portions 320 are formed with concave portions 321, respectively. The recessed portion 321 is a portion of the 2 nd side frame portion 320 recessed from the 2 nd front end surface 33 toward the other side (rear side) in the x direction. Further, the recess 321 is located inward in the y direction. The pair of recesses 321 constitutes a part of the front recess 171.

The plurality of 2 nd rear groove portions 361 are recessed from the 2 nd rear end surface 34 and extend in the z direction. The 2 nd rear groove 361 reaches the 2 nd main surface 31 and the 2 nd rear surface 32. The sectional shape of the 2 nd rear groove 361 is not particularly limited, and in the illustrated example, it is a semicircular shape. The plurality of 2 nd rear grooves 361 are arranged at intervals in the y direction. The plurality of 2 nd rear grooves 361 constitute a part of each of the plurality of rear grooves 161.

The plurality of 2 nd front groove portions 363 are formed at the boundary portion between the pair of 2 nd side surfaces 35 and the 2 nd front end surface 33. The 2 nd front groove 363 extends in the z direction to reach the 2 nd main surface 31 and the 2 nd back surface 32. The cross-sectional shape of the 2 nd front groove 363 is not particularly limited, and in the illustrated example, is a quarter-circle shape. The plurality of 2 nd front grooves 363 form a part of each of the plurality of front grooves 163.

The 3 rd layer 4 is located at the most lateral (upper) position in the z direction. The 3 rd layer 4 is laminated on one side (upper side) of the 2 nd layer 3 in the z direction. The 3 rd layer 4 includes a3 rd main surface 41, a3 rd back surface 42, a3 rd front end surface 43, a3 rd rear end surface 44, a pair of 3 rd side surfaces 45, a3 rd main portion 410, a pair of 3 rd side frame portions 420, a3 rd front frame portion 430, a plurality of 3 rd rear groove portions 461, and a plurality of 3 rd front groove portions 463.

The 3 rd main surface 41 is a surface facing one side (upper side) in the z direction. In the illustrated example, the 3 rd main surface 41 is perpendicular to the z direction. In the present embodiment, the 3 rd main surface 41 constitutes the main surface 11.

The 3 rd back surface 42 is a surface facing the other side (lower side) in the z direction, which is the side opposite to the side facing the 3 rd main surface 41, and faces the 2 nd main surface 31 of the 2 nd layer 3. In the illustrated example, the 3 rd back surface 42 is perpendicular to the z direction.

The 3 rd front end surface 43 is a surface facing one side (front side) in the x direction, and connects the 3 rd main surface 41 and the 3 rd back surface 42. In the illustrated example, the 3 rd front end surface 43 is perpendicular to the x direction. The 3 rd front end surface 43 constitutes a part of the front end surface 13.

The 3 rd rear end face 44 is a face facing the other side (rear side) in the x direction, and connects the 3 rd main face 41 and the 3 rd rear face 42. In the illustrated example, the 3 rd rear end surface 44 is perpendicular to the x direction. The 3 rd rear end face 44 constitutes a part of the rear end face 14.

The pair of 3 rd side surfaces 45 connects the 3 rd main surface 41 and the 3 rd rear surface 42, and connects the 3 rd front end surface 43 and the 3 rd rear end surface 44. The pair of 3 rd side surfaces 45 face the y direction, respectively. In the illustrated example, the 3 rd side 45 is at a right angle with respect to the y-direction. The 3 rd side 45 constitutes a part of the side 15.

The 3 rd main portion 410 is a portion of the 3 rd layer 4 located on the other side (rear side) in the x direction. In the illustrated example, the 3 rd main section 410 has a substantially rectangular shape when viewed in the z direction. The thickness of the 3 rd main portion 410 is the same as the maximum thickness of the 2 nd layer 3.

The pair of 3 rd side frame portions 420 extend from both y-direction sides of the 3 rd main portion 410 to one x-direction side (front side).

The 3 rd front frame portion 430 connects the pair of 3 rd side frame portions 420 at one side end in the x direction and extends in the y direction. The pair of 3 rd side frame portion 420 and the 3 rd front frame portion 430 form a frame-shaped portion. As shown in fig. 5, a recess 431 is formed in the 3 rd front frame portion 430. The recess 431 is a portion recessed from the 3 rd front end surface 43 toward the other side (rear side) in the x direction, and constitutes a part of the front recess 171.

The 3 rd rear groove portions 461 are recessed from the 3 rd rear end surface 44 and extend in the z direction. The 3 rd rear groove 461 reaches the 3 rd main surface 41 and the 3 rd rear surface 42. The cross-sectional shape of the 3 rd rear groove 461 is not particularly limited, and is semicircular in the illustrated example. The 3 rd rear groove 461 is disposed at intervals in the y direction. The plurality of 3 rd rear groove portions 461 constitute a part of each of the plurality of rear groove portions 161.

The 3 rd front groove portions 463 are formed at the boundary portions between the pair of 3 rd side surfaces 45 and the 3 rd front end surface 43. The 3 rd front groove portion 463 extends in the z direction to reach the 3 rd main surface 41 and the 3 rd rear surface 42. The cross-sectional shape of the 3 rd front groove portion 463 is not particularly limited, but is a quarter circle in the illustrated example. The plurality of 3 rd front groove portions 463 constitute a part of each of the plurality of front groove portions 163.

In the present embodiment, the opening 17 is formed in the 3 rd layer 4. In addition, an annular recess 440 is formed in the 3 rd layer 4. The annular recessed portion 440 is a portion of the 3 rd layer 4 surrounding the opening 17 recessed from the 3 rd main surface 41 (main surface 11) toward the other side (lower side) in the z direction. The annular recess 440 has a rectangular annular shape when viewed in the z direction. The annular recess 440 is a portion for providing the 2 nd lid portion 8.

The wiring portion 5 is formed in the substrate 1 and constitutes a conductive path to the semiconductor laser element 6. As shown in fig. 1 to 3 and 5 to 10, in the present embodiment, the wiring section 5 includes a1 st wiring section 51, a2 nd wiring section 52, a3 rd wiring section 53, a plurality of rear connection sections 501, and a plurality of front sections 505. The wiring portion 5 is made of a material having appropriate conductivity, and is formed by plating, bonding, or the like, for example. As a material of the wiring portion 5, for example, Cu, Ni, Ti, Au, or the like can be selected as appropriate. In the wiring portion 5, a surface layer made of Sn may be provided at a portion to which the solder is attached.

The 1 st wiring portion 51 is a portion formed on the 1 st layer 2 of the base 1. In the present embodiment, the 1 st wiring portion 51 includes an element mounting portion 511, a1 st strip portion 512, and a1 st connecting portion 513.

The element mounting portion 511 is formed on the 1 st main surface 21 of the base portion 240 of the 1 st layer 2 of the substrate 1. The element mounting portion 511 is a portion for mounting the semiconductor laser element 6. In the illustrated example, the element mounting portion 511 has a substantially rectangular shape when viewed in the z direction, and covers most of the base portion 240.

The 1 st band-shaped portion 512 is formed in the 1 st main portion 210 of the 1 st layer 2, and reaches the 1 st rear groove portion 261 positioned on the lowermost side in the y direction in the drawing of fig. 8 among the plurality of 1 st rear groove portions 261. The 1 st band-shaped portion 512 extends in the x direction from the 1 st rear groove portion 261.

The 1 st coupling section 513 couples the element mounting section 511 and the 1 st belt-shaped section 512. The shape and size of the 1 st coupling part 513 are not particularly limited, and in the illustrated example, the shape has 2 curved portions.

The 2 nd wiring portion 52 is a portion formed in the 2 nd layer 3 of the base 1. The 2 nd wiring portion 52 includes a plurality of wire bonding portions 521, a plurality of 2 nd ribbon portions 522, and a plurality of 2 nd coupling portions 523.

The plurality of wire bonding portions 521 are portions connected to the plurality of wires 67. In the present embodiment, a plurality of wire bonding portions 521 are arranged in the y direction and formed in one side (front side) portion in the x direction of the 2 nd main portion 310. The shape of the wire bonding portion 521 is not particularly limited, and is rectangular in the illustrated example. As shown in fig. 1, the plurality of wire bonding portions 521 are exposed from the 3 rd layer 4 when viewed in the z direction.

The plurality of 2 nd band-shaped portions 522 are formed in the 2 nd main portion 310 of the 2 nd layer 3 and reach the 2 nd rear groove portions 361 that are 4 upper in the y direction in the drawing of fig. 9 among the plurality of 2 nd rear groove portions 361. The 2 nd band-shaped portion 522 extends from the 2 nd rear groove portion 361 in the x direction. As shown in fig. 8, the 1 st band-shaped portion 512 and the plurality of 2 nd band-shaped portions 522 are arranged at intervals in the y direction when viewed in the z direction.

The plurality of 2 nd coupling portions 523 couple the plurality of wire bonding portions 521 and the plurality of 2 nd ribbon portions 522. The shape and size of the 2 nd connecting part 523 are not particularly limited, and in the illustrated example, the shape has 2 curved portions.

The 3 rd wiring portion 53 is a portion formed on the 3 rd layer 4 of the base 1. The 3 rd wiring portion 53 has a plurality of mounting terminal portions 531 and 532.

The plurality of mounting terminal portions 531 are formed on the 3 rd main portion 410 of the 3 rd layer 4 and arranged with a space therebetween in the y direction. The plurality of mounting terminal portions 531 reach 43 rd rear groove portions 461 on the upper side in the figure in fig. 10 in the y direction among the plurality of 3 rd rear groove portions 461. The mounting terminal portions 531 extend in the x direction from the 3 rd rear groove portion 461. The y-direction dimension of the mounting terminal portions 531 is larger than the y-direction dimension of the 2 nd belt-like portion 522. The plurality of mounting terminal portions 531 are, for example, anode electrodes.

The mounting terminal portion 532 is formed in the 3 rd main portion 410 of the 3 rd layer 4. The mounting terminal portion 532 reaches the 3 rd rear groove portion 461 located at the lowermost side in the y direction in the figure of fig. 10 among the plurality of 3 rd rear groove portions 461. The mounting terminal portion 532 extends from the 3 rd rear groove portion 461 in the x direction. The mounting terminal portion 532 has a dimension in the y direction larger than that of the 1 st strip portion 512. The plurality of mounting terminal portions 531 and 532 are arranged with a space therebetween in the y direction. The mounting terminal portion 532 is, for example, a cathode electrode.

As shown in fig. 1, in the present embodiment, the center O1 of the wire bonding portion 521 and the center O2 of the mounting terminal portion 531 which are electrically connected to each other are arranged with a distance G in the y direction when viewed in the z direction. The plurality of distances G shown in fig. 1 may be the same size or different sizes. An extension line E, which is assumed to extend from the y-direction end edge of the wire bonding portion 521, intersects with the mounting terminal portion 531.

As shown in fig. 3, the plurality of rear connecting portions 501 are formed so as to cover 4 rear groove portions 161 on the right side in the drawing among the plurality of rear groove portions 161 of the base 1. In the present embodiment, the rear connecting portion 501 reaches one z-direction side end (upper side end) of the rear groove portion 161. In the illustrated example, the rear connecting portion 501 reaches the other side end (lower side end) of the rear groove portion 161 in the z direction. The rear connecting portion 501 is in contact with and electrically connected to the 2 nd strip portion 522 of the 2 nd wiring portion 52 and the mounting terminal portion 531 of the 3 rd wiring portion 53, respectively. Thus, the wire bonding portion 521 is electrically connected to the mounting terminal portion 531 via the 2 nd connecting portion 523, the 2 nd ribbon-like portion 522, and the rear connecting portion 501.

The rear connection portion 502 is formed so as to cover the rear groove portion 161 at the left end in the drawing of fig. 3 among the plurality of rear groove portions 161 of the base 1. In the present embodiment, the rear connection portion 502 reaches one z-direction side end (upper side end) of the rear groove portion 161. In the illustrated example, the rear connection portion 502 reaches the other side end (lower side end) of the rear groove portion 161 in the z direction. The rear connecting portion 502 is in contact with and electrically connected to the 1 st strip portion 512 of the 1 st wiring portion 51 and the mounting terminal portion 532 of the 3 rd wiring portion 53. Thus, the element mounting portion 511 is electrically connected to the mounting terminal portion 532 via the 1 st connecting portion 513, the 1 st belt-like portion 512, and the rear connecting portion 502.

As shown in fig. 2, the plurality of front portions 505 cover the plurality of front groove portions 163, respectively. In the illustrated example, the front portion 505 covers the entire front groove 163 and reaches both ends of the front groove 163 in the z direction. The front portion 505 is not in contact with the 1 st, 2 nd and 3 rd wiring portions 51, 52 and 53, and is not electrically connected to these portions.

The semiconductor laser device 6 is a device that emits laser light of a predetermined wavelength. The specific structure of the semiconductor laser element 6 is not particularly limited, and in the present embodiment, the semiconductor laser element 6 includes a semiconductor layer 61, a plurality of waveguide paths 62, and a plurality of electrodes 63.

The semiconductor layer 61 is a semiconductor layer in which a plurality of layers made of a semiconductor material are stacked, and includes, for example, an active layer, and an n-type cladding layer and a p-type cladding layer that sandwich the active layer. Electrons and holes recombine in the active layer, and light is emitted.

The plurality of waveguide paths 62 are portions for generating laser light having a predetermined wavelength by repeatedly reflecting light emitted from the active layer in the x direction. In the present embodiment, the plurality of waveguide paths 62 are arranged at intervals in the y direction and each extend along the x direction. The semiconductor laser element 6 is a multi-beam type and can emit laser light from each of the waveguide paths 62 (i.e., independently of the other waveguide paths).

The plurality of electrodes 63 are provided corresponding to the plurality of waveguide paths 62 and are arranged at intervals in the y direction. A plurality of leads 67 are connected to the plurality of electrodes 63 independently. In the illustrated example, a plurality of leads 67 are connected to 1 electrode 63 for the purpose of allowing a larger current to flow.

In the present embodiment, an electrode (not shown) provided on the lower surface of the semiconductor layer 61 of the semiconductor laser element 6 is electrically connected to the element mounting portion 511 by a conductive bonding material (not shown) such as Ag paste. Thereby, the semiconductor laser element 6 is mounted on the 1 st main surface 21 of the mount portion 240. In the illustrated example, as shown in fig. 1 and 5, the x-direction one-side end of the semiconductor laser element 6 protrudes from the pedestal portion 240 by the length L toward the x-direction one side. Since the protrusion suppresses interference of light from the semiconductor laser element 6 with the pedestal portion 240, the same configuration is preferably shown in the following drawings. However, in the case where the interference of light from the semiconductor laser device 6 is allowed, the semiconductor laser device 6 may not protrude from the pedestal portion 240, for example, the x-direction one-side end of the semiconductor laser device 6 and the x-direction one-side end of the pedestal portion 240 may be substantially aligned when viewed in the z-direction.

The number of waveguide 62 included in the semiconductor laser element 6 is not particularly limited. In the illustrated example, the semiconductor laser element 6 has 4 waveguide paths 62. Correspondingly, the semiconductor laser element 6 has 4 electrodes 63. In addition, the 2 nd wiring portion 52 has 4 wire bonding portions 521, 42 nd strip portions 522, and 42 nd connecting portions 523. The substrate 1 has 5 rear groove portions 161, and the wiring portion 5 has 4 rear connection portions 501 and 1 rear connection portion 502. In addition, the 3 rd wiring portion 53 has 4 mounting terminal portions 531 and 1 mounting terminal portion 532.

The 1 st lid 7 closes the emission portion 18 and is formed of a material that can transmit light from the semiconductor laser element 6. In the present embodiment, the 1 st cover 7 is formed of, for example, transparent glass. The 1 st lid portion 7 may be coated with a predetermined coating for improving the emission efficiency. In the illustrated example, the 1 st lid 7 has a rectangular shape when viewed in the x direction, and is accommodated in the front recess 171 of the base 1. The method of attaching the 1 st lid 7 to the base 1 is not particularly limited, and the lid may be bonded to the base by an adhesive material such as an ultraviolet curable resin. In the illustrated example, the 1 st cover 7 is a flat plate having the same dimension in the x direction.

The 2 nd lid portion 8 closes the opening 17. The material of the 2 nd lid portion 8 is not particularly limited, and is formed of, for example, glass in the present embodiment. In addition, the 2 nd cover part 8 may be implemented with a prescribed coating for attenuating a prescribed extraneous light. In the illustrated example, the 2 nd lid portion 8 has a rectangular shape when viewed in the z direction, and is accommodated in the annular recess 440 of the base 1. The method of attaching the 2 nd lid portion 8 to the base 1 is not particularly limited, and for example, the lid portion can be bonded with an adhesive such as an ultraviolet curable resin. In the illustrated example, the 2 nd lid 8 has a flat plate shape having the same dimension in the z direction.

In the configuration having the 1 st lid 7 and the 2 nd lid 8, the internal space defined by the base body 1 may be sealed by the 1 st lid 7 and the 2 nd lid 8. In this case, it is preferable that the 1 st lid 7 and the 2 nd lid 8 are attached to the base 1 in a reduced pressure atmosphere, so that the 1 st lid 7 and the 2 nd lid 8 are pressed against the base 1 by atmospheric pressure after the completion of the semiconductor laser device a 1.

Next, the operation of the semiconductor laser device a1 will be described.

According to the present embodiment, a plurality of mounting terminal portions 531 and 532 are formed on the main surface 11 (the 3 rd main surface 41), and the main surface 11 (the 3 rd main surface 41) is used as a mounting surface. Therefore, the semiconductor laser device a1 can be surface-mounted on a circuit board (not shown) or the like.

When the main surface 11 is used as a mounting surface, laser light can be emitted from the semiconductor laser device a1 to one side (front side) in the x direction. Thus, the emission direction of the laser beam can be changed by 90 ° for a semiconductor laser device of the type mounted using a lead.

The opening 17 is opened from the main surface 11 as the mounting surface. Thus, in the manufacturing process of the semiconductor laser device a1, for example, the opening 17 is formed in an orientation facing upward in the vertical direction after the substrate 1 is formed. Next, in this state, the semiconductor laser element 6 is mounted, the lead 67 is bonded, and the 1 st lid 7 and the 2 nd lid 8 are mounted. Further, the conduction test or the light emission test of the semiconductor laser element 6 can be performed using the plurality of mounting terminal portions 531 and 532 oriented upward in the vertical direction. Therefore, there is no need to perform an operation such as inverting the semiconductor laser device a1 after completion of the semiconductor laser device a1 in order to perform a test using the plurality of mounting terminal portions 531 and 532. Further, since the base 1 is hollow in the emission portion 18, stress generated by the operation of the semiconductor laser device a1 can be relaxed.

By providing the base portion 240 and the bottom portion 250, the 1 st main surface 21 on the x-direction side of the base portion 240 is positioned on the z-direction side from the bottom portion 250. By using the 1 st main surface 21 as a mounting surface, it is possible to suppress a situation in which the laser light emitted from the semiconductor laser element 6 is blocked by the pedestal portion 240 and the bottom portion 250. Further, a structure in which one side end (front side end) in the x direction of the semiconductor laser element 6 is projected from the base portion 240 to one side (front side) in the x direction is preferable for suppressing a situation in which the laser light is blocked. However, the semiconductor laser element 6 is not limited to the structure protruding from the base portion 240.

The plurality of 2 nd strip portions 522 extend toward the other side (rear side) in the x direction with respect to the semiconductor laser element 6. That is, the plurality of 2 nd band-shaped portions 522 are provided on the opposite side to the side of the semiconductor laser element 6 from which the laser light is emitted. This makes it possible to form the plurality of 2 nd band-shaped portions 522 in a linear shape with little difference in distance therebetween. Such a configuration is suitable for making the path length of the conduction path of the semiconductor laser element 6 to the plurality of waveguide paths 62 and the plurality of electrodes 63 uniform. Further, the 1 st band-shaped portion 512 is linear like the plurality of 2 nd band-shaped portions 522, and is arranged at intervals in the y direction from the plurality of 2 nd band-shaped portions 522 when viewed in the z direction, whereby unintended mutual interference at the time of energization can be suppressed. This is preferable for the plurality of semiconductor laser elements 6 to emit light independently at a desired timing.

An inner end surface 36 is formed on the base 1. The semiconductor laser element 6 may emit light not only to one side (front side) in the x direction but also to the other side (rear side) in the x direction. Preferably, the light emitted rearward does not overlap with the light emitted forward. In the present embodiment, an inner end surface 36 is provided on the other side (rear side) in the x direction of the conductor laser element 6. This can suppress the situation in which the laser light traveling from the semiconductor laser element 6 to the rear side is emitted toward the emission portion 18.

On the main surface 11 as the mounting surface, a plurality of mounting terminal portions 531 and 532 are arranged offset to the other side (rear side) in the x direction. On the other hand, the plurality of front portions 505 are arranged on one side (front side) in the x direction with a space between the plurality of mounting terminal portions 531 and 532. Thus, when the semiconductor laser device a1 is mounted on a circuit board or the like, the surface tension of the molten solder can be applied to the semiconductor laser device a1 with a more balanced property. Therefore, the mounting position and posture of the semiconductor laser device a1 can be set more accurately.

Fig. 11 to 40 show a modification of the present invention and other embodiments. In the drawings, the same or similar elements as those of the above-described embodiment are denoted by the same reference numerals as those of the above-described embodiment. It is to be understood that the above-described embodiment, and the modifications and embodiments described below can be combined in various ways by appropriately adopting the configurations of the respective portions.

Fig. 11 is a main-part enlarged cross-sectional view showing a1 st modification of the semiconductor laser device a 1. In the semiconductor laser device a11 according to the present modification, the inner end surface 36 has a shape along the z-direction and is not inclined with respect to the z-direction.

Fig. 12 is a main-part enlarged cross-sectional view showing a2 nd modification of the semiconductor laser device a 1. In the semiconductor laser device a12 of the present modification, the inclination of the inner end face 36 is different from that of the inner end face 36 of the semiconductor laser device a 1. In the present modification, the inner end surface 36 is inclined so as to be positioned on the other side (rear side) in the x direction from one side (upper side) in the z direction toward the other side (lower side) in the z direction.

As can be understood from these modifications, the angle of the inner end surface 36 can be set to various angles.

Fig. 13 is a cross-sectional view showing a3 rd modification of the semiconductor laser device a 1. The semiconductor laser device a13 according to the present modification is different from the semiconductor laser device a1 in the method of attaching the 1 st lid 7 to the base 1.

In the present modification, the base 1 is not provided with the front recess 171. The 1 st lid 7 is attached to the front end surface 13 of the base 1 by, for example, adhesion. As can be understood from this modification, the method or structure for attaching the 1 st lid 7 to the base 1 is not particularly limited.

Fig. 14 is a cross-sectional view showing a4 th modification of the semiconductor laser device a 1. In the semiconductor laser device a14 of the present modification, the structure of the 1 st lid 7 is different from that of the semiconductor laser device a1 described above.

In the present modification, the 1 st lid portion 7 includes the lens portion 71. The lens portion 71 has a shape bulging in the x direction, and constitutes a so-called convex lens. In the 1 st lid portion 7, the lens portion 71 refracts the laser light from the semiconductor laser element 6, whereby the directivity in the x direction can be further improved. The lens portion 71 formed of a convex lens is an example, and various shapes such as a concave lens can be suitably used for the lens portion 71.

Fig. 15 is a cross-sectional view showing a5 th modification of the semiconductor laser device a 1. The semiconductor laser device a15 according to this modification is different from the semiconductor laser device a1 in the structure of the semiconductor laser element 6.

In the present modification, the semiconductor laser element 6 has a sub mount (Submount) 68. The sub-susceptor 68 is made of a material such as Si, GaN, SiC, AlN, or the like. The sub-mount 68 has a semiconductor layer 61 formed on its upper surface.

The sub-base 68 has a through wiring 69. The through wiring 69 is a conductive member that penetrates the sub-base 68 in the z-direction. The through wiring 69 is electrically connected to an electrode (not shown) of the semiconductor layer 61.

The layer 12 of the present modification does not have the pedestal portion 240 in the semiconductor laser device a 1. In addition, the 1 st main portion 210 and the bottom portion 250 have the same thickness as each other. The element mounting portion 511 of the 1 st wiring portion 51 of the wiring portion 5 is formed on the 1 st main surface 21 of the bottom portion 250. The through wiring 69 of the sub-mount 68 is electrically connected to the element mounting portion 511.

According to this modification, the semiconductor laser device a15 can also be surface-mounted. The semiconductor laser element 6 may be of a type having the sub-mount 68, or may be of a type not having the sub-mount 68. By appropriately changing the structures of the substrate 1 and the wiring portion 5, various types of semiconductor laser elements 6 can be used.

Fig. 16 is a plan view showing a6 th modification of the semiconductor laser device a 1. Fig. 17 is a sectional view taken along line XVII-XVII of fig. 16.

In the semiconductor laser device a16 of the present modification, one end of the semiconductor laser element 6 in the x direction is located on the other end in the x direction by the length L' with respect to one end of the pedestal portion 240 in the x direction. That is, the semiconductor laser element 6 is not configured to protrude from the pedestal portion 240, but is configured to be arranged to be retreated from one side end of the pedestal portion 240 in the x direction to the other side in the x direction.

According to such a modification, the area of the semiconductor laser element 6 overlapping the element mounting portion 511 (the pedestal portion 240) can be increased. This enables heat generated by light emission of the semiconductor laser element 6 to be more efficiently transferred to the pedestal portion 240 (base 1). Further, by increasing the bonding area between the semiconductor laser element 6 and the element mounting portion 511 (the pedestal portion 240), the bonding strength between them can be improved. In addition, according to the present modification, it can be understood that the positional relationship between the x-direction one-side end of the semiconductor laser element 6 and the x-direction one-side end of the base portion 240 (or the x-direction one-side end of the sub-base 68) is not limited at all. This point is the same for other modifications and embodiments.

Fig. 18 to 20 show a semiconductor laser device according to embodiment 2 of the present invention. Fig. 18 is a plan view showing a semiconductor laser device a2 according to the present embodiment. Fig. 19 is a plan view of a principal part of a substrate 1 showing a semiconductor laser device a 2. Fig. 20 is a plan view of a principal part of a substrate 1 showing a semiconductor laser device a 2.

In the semiconductor laser device a2, the arrangement of the 1 st strip 512 of the 1 st wiring section 51 and the plurality of 2 nd strip 522 of the 2 nd wiring section 52 is different from that of the semiconductor laser device a1 described above.

In the present embodiment, the plurality of 2 nd band-shaped portions 522 are disposed on both sides in the y direction with the 1 st band-shaped portion 512 interposed therebetween when viewed in the z direction. In the illustrated example, the 2 nd band-shaped portions 522 are arranged on both sides in the y direction with the 1 st band-shaped portion 512 interposed therebetween.

As shown in fig. 19, the 1 st band-like portion 512 is provided at substantially the center of the 1 st main portion 210 in the x direction. The 1 st coupling portion 513 is linear extending in the x direction and is not curved.

As shown in fig. 20, the 42 nd coupling parts 523 are formed such that the 2 nd coupling parts 523 on one side in the y direction and the 2 nd coupling parts 523 on the other side in the y direction are curved to face in opposite directions to each other.

According to this embodiment, the semiconductor laser device a2 can also be surface-mounted. In addition, according to the present embodiment, the path lengths of the plurality of 2 nd band-shaped portions 522 can be easily made more uniform. In addition, by making the 1 st belt-like portion 512 and the 1 st coupling portion 513 linear, the inductance component in the path can be reduced.

Fig. 21 to 27 show a semiconductor laser device according to embodiment 3 of the present invention. Fig. 21 is a plan view showing a semiconductor laser device a3 according to the present embodiment. Fig. 22 is a side view showing a semiconductor laser device a 3. Fig. 23 is a bottom view of the semiconductor laser device a 3. Fig. 24 is a sectional view taken along line XXIV-XXIV of fig. 21. Fig. 25 is a plan view of a principal part of a substrate 1 showing a semiconductor laser device a 3. Fig. 26 is a plan view of a principal part of a substrate 1 showing a semiconductor laser device a 3. Fig. 27 is a plan view of a principal part of a substrate 1 showing a semiconductor laser device a 3.

In the semiconductor laser device a3, as shown in fig. 23 and 24, the rear surface 12 of the base 1 is a mounting surface.

The substrate 1 has side grooves 162. The side groove portion 162 is recessed from the one side surface 15 and formed along the z direction. In the present embodiment, the side groove portions 162 reach the 1 st rear surface 22 (rear surface 12). In the illustrated example, the side groove portions 162 reach the 3 rd main surface 41 (main surface 11).

The 1 st layer 2 has the 1 st side groove 262. The 1 st side groove 262 is formed along the z direction while being recessed from the 1 st side surface 25. The 2 nd layer 3 has the 2 nd side groove portion 362. The 2 nd side groove 362 is recessed from the 2 nd side surface 35 and formed along the z direction. The 3 rd layer 4 has a3 rd side groove portion 462. The 3 rd side groove 462 is formed along the z direction while being recessed from the 3 rd side surface 45. The rear groove portion 161 includes a1 st side groove portion 262, a2 nd side groove portion 362, and a3 rd side groove portion 462.

The wiring portion 5 has a plurality of rear connection portions 501 and side connection portions 503. The plurality of rear connecting portions 501 cover the plurality of rear groove portions 161 in the same manner as in the above-described embodiment. The side connecting portion 503 covers the side groove portion 162 and reaches the other side end (lower side end) in the z direction of the side groove portion 162. In the illustrated example, the side connection portion 503 reaches one side end (upper side end) in the z direction of the side groove portion 162.

As shown in fig. 23 and 25, the 1 st wiring portion 51 includes an element mounting portion 511, a1 st connecting portion 513, a plurality of mounting terminal portions 514, a mounting terminal portion 515, and a1 st connecting portion 518. The 1 st coupling portion 513 extends in the y direction from the element mounting portion 511 to the 1 st side groove portion 262, and reaches the 1 st side groove portion 262. Thereby, the 1 st coupling portion 513 is in contact with the side coupling portion 503.

The mounting terminal portion 515 is formed on the 1 st rear surface 22 (rear surface 12). Mounting terminal portion 515 has a rectangular shape when viewed in the z direction, and is larger than mounting terminal portion 514. The 1 st coupling portion 518 extends from the mounting terminal portion 515 in the y direction and reaches the 1 st side groove portion 262. Thereby, the 1 st coupling portion 518 is in contact with the side coupling portion 503. As a result, the device mounting portion 511 is electrically connected to the mounting terminal portion 515 via the 1 st connecting portion 513 and the side connecting portions 503 and 581. As shown in fig. 24 and 25, the mounting terminal portion 515 is preferably formed to overlap the semiconductor laser element 6 when viewed in the z direction. The mounting terminal portion 515 is, for example, a cathode electrode.

The plurality of mounting terminal portions 514 are formed on the other side (rear side) in the x direction of the 1 st rear surface 22 (rear surface 12). The mounting terminal portions 514 reach the 1 st rear groove portions 261, respectively. Thereby, each of the plurality of mounting terminal portions 514 is in contact with each of the plurality of rear connection portions 501. As shown in fig. 24 and 26, the plurality of mounting terminal portions 514 preferably overlap the plurality of wire bonding portions 521 when viewed in the z direction. The mounting terminal portion 514 is, for example, an anode electrode.

In the illustrated example, the 2 nd wiring portion 52 includes a plurality of wire bonding portions 521 and a plurality of 2 nd strip portions 522, and does not include the 2 nd connecting portion 523 of the above embodiment. The wiring portion 5 does not include the 3 rd wiring portion 53 of the above embodiment. The 2 nd band-shaped portion 522 is in contact with the rear connecting portion 501. As a result, the wire bonding portions 521 are electrically connected to the mounting terminal portions 514 via the second strip portions 522 and the rear connecting portions 501. However, the 2 nd wiring portion 52 may have the 2 nd connecting portion 523, and the wiring portion 5 may have the 3 rd wiring portion 53.

According to this embodiment, the semiconductor laser device a3 can be surface-mounted with the rear surface 12 as a mounting surface. In addition, according to the present embodiment, it is not necessary to form the wiring portion 5 on the main surface 11 of the substrate 1. The mounting terminal portion 515 can be configured to overlap the semiconductor laser element 6 when viewed in the z direction. Further, the plurality of mounting terminal portions 514 can be configured to overlap the plurality of wire bonding portions 521 when viewed in the z direction. Such a structure is preferable for downsizing the semiconductor laser device a 3.

Fig. 28 is a cross-sectional view showing a1 st modification of the semiconductor laser device a 3. In the semiconductor laser device a31 of the present modification, the method of attaching the 2 nd lid portion 8 to the base 1 is different from the above-described example.

In the present modification, the annular recess 440 is not provided in the base 1. The 2 nd lid portion 8 is attached to the main surface 11 of the base 1 by, for example, adhesion. As can be understood from this modification, the method or structure for attaching the 2 nd lid portion 8 to the base 1 is not particularly limited.

Fig. 29 to 32 show a semiconductor laser device according to embodiment 4 of the present invention. Fig. 29 is a plan view showing a semiconductor laser device a4 according to the present embodiment. Fig. 30 is a bottom view showing a 4. Fig. 31 is a cross-sectional view taken along line XXXI-XXXI of fig. 29. Fig. 32 is a cross-sectional view taken along line XXXII-XXXII of fig. 29.

In the present embodiment, the semiconductor laser device a4 includes the thermistor 9. The thermistor 9 is an example of a temperature detection element for detecting the operating temperature of the semiconductor laser element 6.

In the illustrated example, the thermistor 9 is formed on the sub-mount 68 of the semiconductor laser element 6. As shown in fig. 32, the sub-mount 68 includes not only the through-wiring 69 but also the through-wiring 91 and the through-wiring 92. The through-wires 91 and 92 penetrate from the thermistor 9 to the lower surface of the sub-base 68 in the figure, and are formed of an electric conductor such as a metal. Fig. 31 and 32 are diagrams schematically showing a configuration in which the thermistor 9 is formed in the sub-base 68. The specific structure of the thermistor 9 of the sub-base 68 can be set to various structures.

As shown in fig. 30 to 32, the 1 st wiring portion 51 of the wiring portion 5 includes a pair of element mounting portions 511, a pair of 1 st connecting portions 513, a plurality of mounting terminal portions 514, a mounting terminal portion 515, a mounting terminal portion 516, and a plurality of 1 st connecting portions 518. Further, the substrate 1 has a pair of side groove portions 162. The pair of side grooves 162 are formed separately in the pair of side surfaces 15. The wiring portion 5 has a pair of side connection portions 503. The pair of side connecting portions 503 respectively cover the pair of side groove portions 162.

The plurality of element mounting portions 511 are formed on the 1 st main surface 21 of the 1 st layer 2. Are arranged at intervals in the y direction. One of the element mounting portions 511 is connected to the through wiring 69 and the through wiring 91. The other device mounting portion 511 is connected to a through wiring 92.

The pair of 1 st coupling portions 513 extend in the y direction from the pair of element mounting portions 511 to the pair of side groove portions 162. The pair of 1 st coupling portions 513 are respectively in contact with the pair of side coupling portions 503.

The plurality of mounting terminal portions 514 and 515 have the same configuration as the mounting terminal portions 514 and 515 of the semiconductor laser device a3 described above. The mounting terminal portion 515 is electrically connected to, for example, a cathode electrode (not shown) of the thermistor 9 via the 1 st connecting portion 518, the side connecting portion 503, the 1 st connecting portion 513, the element mounting portion 511, and the through wiring 91.

The mounting terminal portions 516 are arranged with a gap in the y direction with respect to the mounting terminal portions 515. One 1 st coupling portion 518 is connected to mounting terminal portion 516. The 1 st coupling portion 518 is in contact with one of the side coupling portions 503. As shown in fig. 32, the mounting terminal portion 516 is electrically connected to, for example, an anode electrode (not shown) of the thermistor 9 via the 1 st connecting portion 518, the side connecting portion 503, the 1 st connecting portion 513, the element mounting portion 511, and the through wiring 92.

According to this embodiment, the semiconductor laser device a4 can be surface-mounted. Further, by having the thermistor 9, the operating temperature of the semiconductor laser element 6 can be monitored from the outside. By incorporating the thermistor 9 in the sub-mount 68, the semiconductor laser device a4 can be downsized. The structure in which the 1 st rear surface 22 (rear surface 12) is used as a mounting surface is advantageous for downsizing the semiconductor laser device a 4.

Fig. 33 to 35 show a semiconductor laser device according to embodiment 5 of the present invention. Fig. 33 is a plan view showing a semiconductor laser device a5 according to the present embodiment. Fig. 34 is a front view showing a semiconductor laser device a 5. FIG. 35 is a cross-sectional view taken along line XXXV-XXXV of FIG. 33.

The semiconductor laser device a5 has the thermistor 9 similarly to the semiconductor laser device a 4. In the present embodiment, the thermistor 9 is configured as an independent element from the semiconductor laser element 6. The semiconductor laser element 6 may have the sub mount 68 or may not have the sub mount 68. In the illustrated example, the semiconductor laser element 6 does not have the sub-mount 68. The semiconductor laser element 6 is mounted on the pedestal portion 240 of the layer 12.

The 1 st wiring portion 51 includes not only the element mounting portion 511 and the 1 st connecting portion 513 but also an element mounting portion 5111, a wire bonding portion 5112, and a connecting portion 5113. The element mounting portion 5111 is disposed at a distance from the element mounting portion 511 in the y direction. The element mounting portion 511 and the element mounting portion 5111 are coupled by the 1 st coupling portion 513. The element mounting unit 5111 is a portion on which the thermistor 9 is mounted. The wire bonding portion 5112 is disposed at an interval in the x direction with respect to the element mounting portion 5111. A lead 99 is connected to the lead bonding portion 5112. The lead wire 99 connects the thermistor 9 and the wire bonding portion 5112. The connection portion 5113 extends in the y direction from the wire bonding portion 5112 to the side groove portion 162. The connection portion 5113 is in contact with the side connection portion 503.

The structure of the rear surface 12 of the semiconductor laser device a5 is the same as that of the semiconductor laser device a 4. As shown in fig. 33, the thermistor 9 and the lead wire 99 are exposed from the opening 17 of the base 1 when viewed in the z direction. As shown in fig. 34, the thermistor 9 is disposed so that a part thereof protrudes from the emission portion 18 and is shielded by the front end face 13 when viewed in the x direction.

According to this embodiment, the semiconductor laser device a5 can also be surface-mounted. Further, by having the thermistor 9, the operating temperature of the semiconductor laser element 6 can be monitored from the outside. It is to be understood that the structure for mounting the thermistor 9 can be variously set according to the present embodiment, and the structure can appropriately correspond to the structures of the base 1 and the wiring portion 5.

Fig. 36 to 38 show a semiconductor laser device according to embodiment 6 of the present invention. Fig. 36 is a plan view showing a semiconductor laser device a6 according to the present embodiment. Fig. 37 is a bottom view of the semiconductor laser device a 6. Fig. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII of fig. 36.

In the present embodiment, the base 1 includes the 1 st layer 2 and the 2 nd layer 3. The 1 st layer 2 is made of, for example, glass epoxy resin, and has a flat plate shape. The 2 nd layer 3 is formed of, for example, epoxy resin. As described above, the base 1 may be formed of a plurality of members formed of different materials.

The 1 st layer 2 has a rectangular shape when viewed in the z direction, and includes a1 st main surface 21, a1 st back surface 22, a1 st front end surface 23, a1 st rear end surface 24, and a pair of 1 st side surfaces 25. The 1 st rear surface 22 constitutes the rear surface 12 and is a mounting surface in the present embodiment.

The 2 nd layer 3 is a layer formed by bonding a member molded with epoxy resin to the 1 st layer 2, for example. Layer 23 has opening 17 and emission part 18, and in the illustrated example, has annular recess 340 and front recess 171. The annular recess 340 is a recess similar to the annular recess 440 of the above embodiment, and is used for providing the 2 nd lid portion 8.

The wiring portion 5 includes an element mounting portion 591, a plurality of wire bonding portions 592, a mounting terminal portion 593, a plurality of mounting terminal portions 594, a plurality of through wirings 595 and a plurality of through wirings 596.

The element mounting portion 591 is formed on the 1 st main surface 21 of the 1 st layer 2 and mounts the semiconductor laser element 6. The plurality of wire bonding portions 592 are formed on the other side (rear side) in the x direction with respect to the element mounting portion 591, and are arranged at intervals in the y direction.

The mounting terminal portions 593 are formed on the 1 st rear surface 22 (rear surface 12) and overlap the element mounting portion 591 when viewed in the z direction. The plurality of wire bonding portions 592 are formed on the 1 st rear surface 22 (rear surface 12), and overlap the plurality of wire bonding portions 592, respectively, when viewed in the z direction.

The plurality of through-wirings 595 pass through the 1 st layer 2 in the z direction and are formed of an electric conductor such as a metal. The plurality of through-wirings 595 connect the device mounting portion 591 and the mounting terminal portion 593. In the illustrated example, the plurality of through-wirings 595 are arranged in a matrix.

The plurality of through-wirings 596 penetrate the 1 st layer 2 in the z direction, and are formed of an electric conductor such as a metal. The plurality of through-wirings 596 connect the plurality of wire bonding portions 592 to the plurality of mounting terminal portions 594, respectively. As shown in fig. 36, the through wiring 596 is disposed so as to overlap the portion of the wire bonding section 592 on the other side in the x direction when viewed in the z direction. Such an arrangement is suitable for providing the bonding portion of the lead 97 at a position separated from the through wiring 596.

According to this embodiment, the semiconductor laser device a6 can also be surface-mounted. Further, by using the through-wirings 595 and 596, the area required for the arrangement of the wiring portion 5 can be reduced, which is preferable for the miniaturization of the semiconductor laser device a 6. Further, by providing the plurality of through-wirings 595, heat generated from the semiconductor laser element 6 can be more efficiently transmitted to the outside.

Fig. 39 and 40 show a semiconductor laser device according to embodiment 7 of the present invention. Fig. 39 is a plan view showing a semiconductor laser device a7 according to the present embodiment. Fig. 40 is a bottom view of the semiconductor laser device a 7.

In the present embodiment, the semiconductor laser element 6 has only 1 waveguide 62 and electrode 63. Accordingly, the number of the wire bonding portions 592 and the mounting terminal portions 594 is 1.

According to this embodiment, the semiconductor laser device a7 can be surface-mounted. It is to be understood from the present embodiment that the number of the waveguide 62 and the electrode 63 of the semiconductor laser device 6 of the present invention is not particularly limited. The number of the waveguide 62 and the number of the electrodes 63 may be 1 or 4 or more. For example, in the semiconductor laser device a1, when it is not necessary to emit laser beams at different timings from the plurality of waveguide paths 62, the semiconductor laser device may have only 1 mounting terminal portion 531.

The semiconductor laser device of the present invention is not limited to the above-described embodiments. The specific structure of each part of the semiconductor laser device of the present invention can be changed in various ways.

[ appendix 1 ]

A semiconductor laser device, comprising:

a semiconductor laser element;

a base supporting the semiconductor laser element; and

a wiring section formed on the substrate and constituting a conduction path to the semiconductor laser element,

the base body has: a mounting surface facing one side of the substrate in a thickness direction and on which the semiconductor laser element is mounted; and an emission portion located on one side in a1 st direction perpendicular to the thickness direction with respect to the semiconductor laser element,

the light from the semiconductor laser element is emitted through the emission portion.

[ Note 2 ]

The semiconductor laser device according to supplementary note 1, wherein the base body has an opening located on the one side in the thickness direction with respect to the semiconductor laser element.

[ Note 3 ]

The semiconductor laser device according to supplementary note 2, wherein the emission portion includes a1 st lid portion that transmits light from the semiconductor laser element.

[ tag 4 ]

The semiconductor laser device according to supplementary note 3, wherein the 1 st lid part has a lens part for refracting light from the semiconductor laser element.

[ tag 5 ]

The semiconductor laser device according to any one of supplementary notes 2 to 4, further comprising a2 nd lid part for closing the opening.

[ appendix note 6 ]

The semiconductor laser device according to any one of supplementary notes 2 to 5, wherein the base body has a mounting surface facing in the thickness direction, and the wiring portion has a mounting terminal portion formed on the mounting surface.

[ additional note 7 ]

The semiconductor laser device according to supplementary note 6, wherein the mounting surface faces the one side in the thickness direction.

[ tag 8 ]

The semiconductor laser device according to supplementary note 6, wherein the mounting surface faces the other side in the thickness direction.

[ tag 9 ]

The semiconductor laser device described in supplementary note 8, wherein the wiring portion has an element mounting portion formed on the mounting surface and mounting the semiconductor laser element.

[ attached note 10 ]

The semiconductor laser device according to supplementary note 9, wherein the substrate has: a rear end surface facing the other side in the 1 st direction and reaching the mounting surface; and at least one rear groove portion recessed from the rear end surface and reaching the mounting surface,

the wiring section has at least one rear connection section formed in the rear groove section and electrically connecting the semiconductor laser element and the mounting terminal section.

[ additional note 11 ]

The semiconductor laser device according to supplementary note 10, wherein the substrate has: a bottom portion located on the other side in the thickness direction with respect to the mounting surface; and a base portion that protrudes from the bottom portion toward the one side in the thickness direction and constitutes the mounting surface.

[ additional note 12 ]

The semiconductor laser device according to supplementary note 10, wherein the semiconductor laser element has a semiconductor layer that functions as light emission and a sub-mount that supports the semiconductor layer.

[ appendix note 13 ]

The semiconductor laser device according to supplementary note 11 or 12, wherein the base has an inner end surface which is located on the other side in the 1 st direction with respect to the semiconductor laser element and is inclined with respect to the thickness direction.

[ tag 14 ]

The semiconductor laser device according to any one of supplementary notes 11 to 13, further comprising a lead wire, wherein the wiring portion has at least 1 wire bonding portion located on the other side in the 1 st direction with respect to the semiconductor laser element and on the one side in the thickness direction with respect to the mounting surface,

the wire is connected to the semiconductor laser element and the wire bonding portion.

[ tag 15 ]

The semiconductor laser device according to supplementary note 14, wherein the semiconductor laser element has a plurality of waveguide paths arranged in a2 nd direction perpendicular to both the 1 st direction and the thickness direction, and the plurality of waveguide paths emit light to one side in the 1 st direction independently of each other.

[ additional note 16 ]

The semiconductor laser device according to supplementary note 15,

the at least 1 rear groove portion includes a plurality of rear groove portions arranged in the 2 nd direction,

the at least 1 wire bond includes a plurality of wire bonds arranged in the 2 nd direction,

the at least 1 rear connection part includes a plurality of rear connection parts formed at the plurality of rear groove parts, respectively,

the wiring portion has a plurality of 2 nd band-shaped portions, each 2 nd band-shaped portion electrically connecting 1 of the plurality of wire bonding portions and 1 of the plurality of rear connection portions to each other,

the plurality of 2 nd strip portions are arranged in the 2 nd direction, and each extend in the 1 st direction.

[ tag 17 ]

The semiconductor laser device according to any one of supplementary notes 1 to 16, further comprising a temperature detection element supported by the base body and electrically connected to the wiring portion.