High-power module for surface-emitting laser chip
阅读说明:本技术 一种针对面发射激光芯片的高功率模块 (High-power module for surface-emitting laser chip ) 是由 曹亚运 肖岩 周德来 于 2019-10-29 设计创作,主要内容包括:本发明涉及一种针对面发射激光芯片的高功率模块,包括多条冷板,每条冷板封装有若干个面发射激光芯片,多条冷板堆叠形成具有堆栈式散热结构的高功率半导体激光器模组。本发明的高功率模块是针对面发射激光芯片高热密度集成的一种新的尝试,相较传统的堆栈式激光器,同样能实现大功率高热密度的解热,因为面发射激光芯片在使用环境上的要求相对边发射激光芯片要低,让大功率激光器可以应用到一些严苛的使用环境中去。(The invention relates to a high-power module aiming at surface-emitting laser chips, which comprises a plurality of cold plates, wherein each cold plate is packaged with a plurality of surface-emitting laser chips, and the plurality of cold plates are stacked to form a high-power semiconductor laser module with a stacked heat dissipation structure. The high-power module is a new attempt aiming at the integration of high heat density of the surface-emitting laser chip, and can also realize the heat release of high power and high heat density compared with the traditional stacked laser, because the requirement of the surface-emitting laser chip on the use environment is lower than that of the edge-emitting laser chip, the high-power laser can be applied to some severe use environments.)
1. A high power module to face-emitting laser chip, includes many cold plates, its characterized in that: each cold plate is packaged with a plurality of surface emitting laser chips, and a plurality of cold plates are stacked to form a high-power semiconductor laser module with a stacked heat dissipation structure.
2. The high power module of claim 1, wherein:
each cold plate is packaged into an independent module;
each cold plate is provided with an electrode module;
each cold plate is packaged with a plurality of surface-emitting laser chips which are sequentially arranged, mutually connected in series and connected with the electrode module in series;
the surface-emitting laser chips encapsulated on each cold plate are arranged in a row; the surface-emitting laser chips of the plurality of cold plates are arranged in a chip array.
3. The high power module of claim 2, wherein:
the surface emitting laser chip is a COS module, comprises a surface emitting laser and a heat sink, and is integrally welded on the cold plate through the heat sink; the heat generated by the surface-emitting laser chip is transferred to the cold plate through the heat sink to be radiated;
the cold plate is a high heat conduction metal plate;
a limiting stepped groove is formed on the surface of the cold plate, and the surface-emitting laser chip is welded in the stepped groove in an aligned manner; the electrode module arranged on the cold plate has a step fall distance with the surface of the surface-emitting laser chip, so that the short circuit caused by the direct contact of the connecting wire with the cold plate is avoided.
4. The high power module of claim 2, wherein:
a collimating lens is arranged on the light emitting surface of the surface emitting laser chip to adjust the uniformity of the light beam of the surface emitting laser chip;
a collimating lens is arranged on the light emitting surface of the row of surface-emitting laser chips to adjust the uniformity of the light beams of the row of surface-emitting laser chips;
a plurality of parallel collimating lenses are arranged on the light emitting surface of the surface-emitting laser chip array to adjust the uniformity of the light beams of the surface-emitting laser chip array;
the collimating lens is fixed on one side of the cold plate, which is packaged with the surface-emitting laser chip, by a collimating lens support;
setting principle of the collimating lens: when the emitted light of the surface-emitting laser chip reaches the collimating lens, the light beam width is within the range of the action surface of the width of the lens of the collimating lens, so that the light combination efficiency and the uniformity of light emitting spots of the whole module are ensured.
5. The high power module of claim 4, wherein: setting principle of the collimating lens: the emitted light of the laser emitting chip reaches the collimating lens and is just within the lens width action face boundary, so that the light combination efficiency is ensured; when the adjacent cold plates are combined, the light beams in the upper row and the light beams in the lower row are not interfered with each other;
the two sides of the width direction of the collimating lens are only provided with allowance positions for dispensing and fixing the lens;
the emitted light of the surface-emitting laser chip is a divergent light beam;
the surface emitting laser chip is an HCSEL or VCSEL chip.
6. The high power module according to any one of claims 1 to 5, wherein:
a cooling liquid flow channel, a water inlet and a water outlet which are communicated with the flow channel are processed in each cold plate and are used for leading cooling liquid into the flow channel from the water inlet and discharging the cooling liquid from the water outlet, so that the surface emitting laser chip is cooled;
the flow channel in the cold plate is sealed by a sealing gasket; and laminating the plurality of cold plates layer by layer to compress the sealing gasket.
7. The high power module of claim 6, wherein:
the flow channels in each cold plate are independently arranged, and the flow channels in the plurality of cold plates are mutually connected in parallel; the water inlets and the water outlets of each cold plate are communicated; at least one water inlet is externally connected with a water inlet pipe to be connected with cooling liquid, and at least one water outlet is externally connected with a water outlet pipe to discharge the cooling liquid to take away heat.
8. The high power module of claim 7, wherein:
the flow channel in the cold plate is a macro-channel flow channel;
the flow channel is a slot formed by the top surface or the bottom surface of the cold plate, the slot is sealed by a sealing gasket, and each flow channel is isolated by the sealing gasket; the sealing gasket is provided with openings corresponding to the water inlets and the water outlets of the flow channels in the cold plates, so that the water inlets and the water outlets of the flow channels of the cold plates are communicated;
a bent channel is designed in the flow channel to lengthen the flow channel so as to increase the heat exchange efficiency;
a plurality of protruding fins are arranged in the flow channel to form a structure similar to a radiating fin;
a groove backflow structure is arranged in the flow channel and close to the surface-emitting laser chip.
9. The high power module of claim 8, wherein:
the flow channel in each cold plate extends along the length direction of the arrangement of the surface-emitting laser chips;
the surface emitting laser chip is arranged on the outer wall surface of the cold plate in the length direction;
further forming a groove structure on the protruding fins at the back side of the flow direction of the cooling liquid, thereby forming a groove reflow structure;
the plurality of protruding fins are also arranged in parallel, extend from one side of the packaged chip to the other side along the width direction of the cold plate, are arranged in the flow channel in a protruding manner, and are vertical to the flow direction or resist the flow of the cooling liquid at a certain angle; the other inner side wall of the flow passage opposite to the chip mounting side forms a curve corresponding to the protruding fin.
10. The high power module of claim 8, wherein:
mounting holes are arranged on the periphery of the flow channel and/or in the flow channel of each layer of cold plate, and the cold plates and the sealing gasket are matched with the cold plates through fasteners to be fastened and pressed;
the uppermost cold plate of the cold plate stack type structure is used as a top sealing plate; the bottom of top closing plate sets up the runner, and the top sets up the mounting groove, and the mounting groove diapire is provided with the mounting hole position that another layer was sealed to fill up in order to cover and sealed runner, the division board of the built-in adaptation of mounting groove, and the division board pressfitting is sealed another layer is sealed fill up and is fastened together with top closing plate to form holistic leak protection structure.
Technical Field
The invention relates to the technical field of laser, in particular to a high-power module aiming at a surface-emitting laser chip.
Background
In the past, in the field of high-power semiconductor lasers, edge-emitting semiconductor lasers based on GaAs materials have occupied the domination and are widely applied to the fields of industry, medical treatment, scientific research and the like, however, edge-emitting semiconductor lasers have the fatal defect, although the expected life is as long as tens of thousands of hours, under the pulse state, the probability of optical disaster degeneration and damage is very high, the influence on the life is serious, the actual service life of the edge-emitting semiconductor lasers is far from the ideal expected life, and meanwhile, along with the increase of power, the two-dimensional stacked array of edge-emitting modules is increased, and the actual effect can be continuously reduced. Therefore, development of a new semiconductor laser applicable to the industrial field is required.
Since 1980, the scientific community has emerged a lot of new achievements of semiconductor physical research, such as crystal epitaxial growth technology (e.g. Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) and Chemical Beam Epitaxy (CBE), etc.), so that semiconductor lasers have successfully applied new quantum well and strained quantum well structures, and semiconductor Laser chip packaging technology, beam shaping technology have been developed sufficiently, and a major breakthrough has been made, so that the varieties and wavelengths of semiconductor lasers have been greatly expanded, and at present, according to the relationship between the light Emitting direction and the epitaxial wafer plane of the Laser chip, the lasers can be divided into Edge Emitting semiconductor lasers (EEL-Edge Emitting Laser), vertical cavity Surface Emitting lasers (VCSEL-vertical cavity Surface Emitting lasers) and the latest horizontal cavity Surface Emitting lasers (HCSEL-horizontal cavity Surface Emitting lasers), the light emitting directions of the VCSELs and the HCSELs are vertical to the direction of the epitaxial wafer and are emitted from the top surface of the reaction region, and the light emitting direction of the edge-emitting semiconductor laser is parallel to the direction of the epitaxial wafer and is emitted from the edge of the reaction region. The two surface-emitting laser chips have the advantages of high surface reflectivity, long expected service life, low failure rate, capability of bearing high working temperature, uniform heating of the body and the like due to the structure. Meanwhile, the packaging is simple and is similar to the LED packaging process. Along with the development of the technology, the monomer power of the surface emitting laser is more and more close to the bar, so the surface emitting laser is more and more robbed in the high power field.
Nowadays, high-power semiconductor lasers are hot spots traced by countries due to wide application prospects and huge potential markets, but the problems of reliability, stability, consistency and the like limit the practical application of the high-power semiconductor lasers to a great extent, and one of the problems faced by the high-power semiconductor lasers is the performance of the lasers. I.e. the output photoelectric conversion efficiency (i.e. output optical power/input electrical power-ratio) of the laser.
Besides being related to laser epitaxial materials and packaging, the problems are influenced by overall heating density and heat dissipation efficiency to a great extent, namely, the heating affects the loss-gain ratio of a chip and the luminous efficiency of the chip, and meanwhile, the problems have certain influence on output wavelength. Traditional stack formula laser instrument is only applicable to the high heat density integration of limit transmission laser chip barre, and the narrow and small light emitting area of limit transmission laser chip is to service environment's strict requirement, because it is narrow and small to send out the light zone, damages because environmental disturbance easily, and the light path plastic of limit transmission integrated module is that some microlens of frock are on the module, need more microfabrication, and follow-up equipment also needs a large amount of accurate frock operations, and this will make the defective rate higher.
At present, the micro-channel is arranged in the radiator of the laser in the market for radiating, however, the water pressure debugging of the internal flow channel is more troublesome, the process of parts is more complex, and the number of manufacturers which can be realized at present is small. Because the inside of the microchannel is the microchannel, the microchannel is easy to block under the condition of incomplete fluid, and only the plugging plate can be replaced, so that the relative maintenance cost is high.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the high-power module for the surface-emitting laser chip is provided, and the problems that the existing high-power module is lack of reliability, stability, consistency and the like, and the use environment is strictly required and the like are solved.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a high power module to surface-emitting laser chip, includes many cold drawing, and every cold drawing is packaged with a plurality of surface-emitting laser chips, and many cold drawing pile up and form the high power semiconductor laser module that has stack formula heat radiation structure.
As some embodiments, each cold plate is individually packaged into a separate module; each cold plate is provided with an electrode module; each cold plate is packaged with a plurality of surface-emitting laser chips which are sequentially arranged, mutually connected in series and connected with the electrode module in series; the surface-emitting laser chips encapsulated on each cold plate are arranged in a row; the surface-emitting laser chips of the plurality of cold plates are arranged in a chip array.
As some embodiments, the surface-emitting laser chip is a COS module, including a surface-emitting laser and a heat sink, integrally welded to the cold plate through the heat sink; the heat generated by the surface-emitting laser chip is transferred to the cold plate through the heat sink to be radiated; the cold plate is a high heat conduction metal plate; a limiting stepped groove is formed on the surface of the cold plate, and the surface-emitting laser chip is welded in the stepped groove in an aligned manner; the electrode module arranged on the cold plate has a step fall distance with the surface of the surface-emitting laser chip, so that the short circuit caused by the direct contact of the connecting wire with the cold plate is avoided.
As some embodiments, the light emitting surface of the surface-emitting laser chip is provided with a collimating lens to adjust the uniformity of the light beam of the surface-emitting laser chip; a collimating lens is arranged on the light emitting surface of the row of surface-emitting laser chips to adjust the uniformity of the light beams of the row of surface-emitting laser chips; a plurality of parallel collimating lenses are arranged on the light emitting surface of the surface-emitting laser chip array to adjust the uniformity of the light beams of the surface-emitting laser chip array; the collimating lens is fixed on one side of the cold plate, which is packaged with the surface-emitting laser chip, by a collimating lens support; setting principle of the collimating lens: when the emitted light of the surface-emitting laser chip reaches the collimating lens, the light beam width is within the range of the action surface of the width of the lens of the collimating lens, so that the light combination efficiency and the uniformity of light emitting spots of the whole module are ensured.
As some embodiments, the setting principle of the collimating lens is as follows: the emitted light of the laser emitting chip reaches the collimating lens and is just within the lens width action face boundary, so that the light combination efficiency is ensured; when the adjacent cold plates are combined, the light beams in the upper row and the light beams in the lower row are not interfered with each other; the two sides of the width direction of the collimating lens are only provided with allowance positions for dispensing and fixing the lens; the emitted light of the surface-emitting laser chip is a divergent light beam; the surface emitting laser chip is an HCSEL or VCSEL chip.
As some embodiments, a cooling liquid flow channel, and a water inlet and a water outlet which are communicated with the flow channel are processed in each cold plate, and the cooling liquid is respectively guided into the flow channel from the water inlet and is discharged from the water outlet, so as to dissipate heat of the surface-emitting laser chip; the flow channel in the cold plate is sealed by a sealing gasket; and laminating the plurality of cold plates layer by layer to compress the sealing gasket.
As some embodiments, the flow channels in each cold plate are independently arranged, and the flow channels in a plurality of cold plates are connected in parallel; the water inlets and the water outlets of each cold plate are communicated; at least one water inlet is externally connected with a water inlet pipe to be connected with cooling liquid, and at least one water outlet is externally connected with a water outlet pipe to discharge the cooling liquid to take away heat.
As some embodiments, the flow channels within the cold plate are macro-channel flow channels; the flow channel is a slot formed by the top surface or the bottom surface of the cold plate, the slot is sealed by a sealing gasket, and each flow channel is isolated by the sealing gasket; the sealing gasket is provided with openings corresponding to the water inlets and the water outlets of the flow channels in the cold plates, so that the water inlets and the water outlets of the flow channels of the cold plates are communicated; a bent channel is designed in the flow channel to lengthen the flow channel so as to increase the heat exchange efficiency; a plurality of protruding fins are arranged in the flow channel to form a structure similar to a radiating fin; a groove backflow structure is arranged in the flow channel and close to the surface-emitting laser chip.
As some embodiments, the flow channel within each cold plate extends along the length of the surface-emitting laser chip arrangement; the surface emitting laser chip is arranged on the outer wall surface of the cold plate in the length direction; further forming a groove structure on the protruding fins at the back side of the flow direction of the cooling liquid, thereby forming a groove reflow structure; the plurality of protruding fins are also arranged in parallel, extend from one side of the packaged chip to the other side along the width direction of the cold plate, are arranged in the flow channel in a protruding manner, and are vertical to the flow direction or resist the flow of the cooling liquid at a certain angle; the other inner side wall of the flow passage opposite to the chip mounting side forms a curve corresponding to the protruding fin.
As some embodiments, mounting holes are arranged on the periphery of the flow channel and/or in the flow channel of each layer of cold plates, and the cold plates and the sealing gasket are matched with the mounting holes through fasteners to be fastened and pressed; the uppermost cold plate of the cold plate stack type structure is used as a top sealing plate; the bottom of top closing plate sets up the runner, and the top sets up the mounting groove, and the mounting groove diapire is provided with the mounting hole position that another layer was sealed to fill up in order to cover and sealed runner, the division board of the built-in adaptation of mounting groove, and the division board pressfitting is sealed another layer is sealed fill up and is fastened together with top closing plate to form holistic leak protection structure.
The invention has the beneficial effects that:
the high-power semiconductor laser module provided by the invention has high-quality laser array strips and a high-efficiency heat dissipation structure, and has high stability and high reliability. Meanwhile, the packaging structure is simple, efficient, low in cost and convenient to widely apply. The invention relates to a novel packaging structure of a high-power module for a surface-emitting laser chip array, which increases the flexibility of high-power integration of the surface-emitting laser chip and can adjust the internal heat dissipation structure and the number of stacked cold plates according to compatible chips.
Furthermore, the high-power module for the surface-emitting laser chip of the invention is a new attempt for high heat density integration of the surface-emitting laser chip, and compared with the traditional stacked laser, the high-power high heat density module can also realize high-power high heat density heat release, but the traditional stacked laser is only suitable for high heat density integration of the side-emitting laser chip, and the structure is suitable for high density integration of various surface-emitting laser chips. The invention solves the problem of high-power integration of the surface emitting laser chip, and the high-power laser can be applied to some severe use environments.
The laser can directly use a medium-sized optical lens on a surface emitting integrated module, can meet debugging requirements through conventional processing and tooling, and avoids the processes of micro-processing and micro-tooling.
Further, the flow passages in the cold plate of the present invention are macro-channels, thus: (1) compared with the micro-channel, the processing belongs to conventional processing, and the relative realization degree in the process is much higher; (2) in the macro-channel flow channel, the cooling medium has no strict requirement under the condition of meeting the fluid requirement, and the adaptability is good; (3) temperature subsection adjustment is easy to realize, points needing to be adjusted can be directly positioned according to the characteristics of the macro-channel flow channel, and the temperature characteristics of a certain point cannot be accurately adjusted and controlled due to the multi-layer microstructure of the micro-channel.
The present invention is described in further detail below with reference to the attached drawing figures.
Drawings
Fig. 1 is a perspective view of a high power module for a surface-emitting laser chip according to an embodiment of the present invention.
Fig. 2 is an exploded view of a high power module for a surface-emitting laser chip according to an embodiment of the present invention.
FIG. 3 is a schematic view of an assembly structure of the inter-cold plate unit according to the embodiment of the invention.
Fig. 4 is a perspective view of a single cold plate unit of an embodiment of the present invention.
FIG. 5 is a schematic diagram of a single cold plate laminar flow channel and temperature gradients in accordance with an embodiment of the present invention.
Detailed Description
It should be noted that, in the present invention, the embodiments and features of the embodiments may be combined with each other without conflict, and the present invention is further described in detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1-5, embodiments of the present invention relate to a
The
Wherein, the cold plate of the uppermost layer is used as the
The surface emitting laser chip may be one of HCSEL and VCSEL, and the
In a specific embodiment, referring to fig. 3-4, a
As an embodiment, each individual
The limiting
Each cold drawing integration a plurality of chips, the integrated high power laser module of a plurality of cold drawing stack formula structures simultaneously, its power collocation scheme is diversified, and can only adjust cold drawing quantity, all has very high advantage in cost and power collocation flexibility.
The light emitting surface of the surface-emitting
The chips integrated on the independent
After a plurality of separated
Preferably, the collimating lens group is arranged on the light-emitting surface of the surface-emitting laser chip array, and the position of the collimating lens group is as shown in the light-emitting range of the chip in fig. 3-4, so that when the
The
The surface-emitting laser chip array 4 is formed by welding COS modules (chip and heat sink integrated modules) on the
Each cold plate is internally provided with a water
As an embodiment, the
Furthermore, a fin structure for locally enhancing heat dissipation is added in the flow channel of the middle
In this embodiment, a row of
The two ends of the
Each layer of
The
The
The top of the groove of the internal flow channel of each cold plate (the middle
The shape and the size of the sealing
The sealing
The cold plate stacking structure takes the
In this embodiment, to avoid the occurrence of a gap between the layers, a single-layer gasket fitting structure is used inside to seal and isolate the
The upper surface of the
The layers of each layer of cold plate (the
According to the cold plate stacking scheme of the high-
Referring to the flow channel structure analysis shown in FIG. 5, in one non-limiting example, the
Referring to fig. 5, the
In the illustrated example, eight intermediate
The cold plate of the high-
In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be a mechanical connection, and can also be an electrical connection or a connection capable of transmitting data; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and are intended to be within the scope of the invention; the scope of the invention is defined by the appended claims and equivalents thereof.