阅读说明：本技术 激光二极体表面安装结构 (Laser diode surface mounting structure ) 是由 李训福 李後杰 于 2018-06-04 设计创作，主要内容包括：本发明是有关一种激光二极体表面安装结构,包括：至少一边射型激光二极体晶片,包含两电极；一导热板,具有一上层导电层、一下层导电层及至少一贯穿该上层导电层及该下层导电层的导电体贯孔,用以承载该至少一边射型激光二极体晶片的两电极的一极；二个以上相互间隔且配置于一平面上的金属板,其中一第一金属板配置于该导热板的下方并与该导热板的下层导电层接触,一第二金属板配置于相邻而隔开于该第一金属板；以及一具有开口的绝缘框架,设置于该二个以上的金属板上方,用以固持所述二个以上的金属板。(The invention relates to a laser diode surface mounting structure, comprising: at least one side-emitting laser diode chip, which includes two electrodes; a heat conducting plate having an upper conductive layer, a lower conductive layer and at least one conductive through hole passing through the upper conductive layer and the lower conductive layer for carrying one of the two electrodes of the at least one edge-emitting laser diode chip; more than two metal plates which are mutually spaced and arranged on a plane, wherein a first metal plate is arranged below the heat conducting plate and is contacted with the lower conductive layer of the heat conducting plate, and a second metal plate is arranged adjacent to and spaced from the first metal plate; and an insulating frame with an opening, which is arranged above the more than two metal plates and used for fixing the more than two metal plates.)

1. A surface mounting structure of laser diode comprises:

At least one side-emitting laser diode chip, which includes two electrodes having an anode and a cathode; a heat conducting plate having an upper conductive layer, a lower conductive layer and at least one conductive through hole penetrating through the upper conductive layer and the lower conductive layer for carrying one electrode of the two electrodes of the at least one edge-emitting laser diode chip, the at least one conductive through hole being electrically connected to the upper conductive layer and the lower conductive layer;

More than two metal plates which are mutually spaced and arranged on a plane, wherein a first metal plate is arranged below the heat conducting plate and is contacted with the lower conductive layer of the heat conducting plate, a second metal plate is arranged adjacent to and is separated from the first metal plate, and the second metal plate is electrically connected with the other electrode of the two electrodes by at least one jumper; and

And the insulating frame is provided with an opening and is arranged above the more than two metal plates for holding the more than two metal plates, wherein the opening is used for allowing the laser emitted by the at least one edge-emitting laser diode wafer to pass through.

2. The surface mounting structure of laser diode of claim 1, wherein the at least one jumper wire is two jumper wires connected to the other pole of the at least one edge-emitting laser diode chip and connected in a symmetrical manner on the left and right sides of the at least one edge-emitting laser diode chip.

3. The laser diode surface mounting structure of claim 1, wherein the at least one edge emitting laser diode chip is plural, the plural edge emitting laser diode chips are electrically connected, and wherein the electrical connection is in series, in parallel, or a combination thereof.

4. The laser diode surface mounting structure according to claim 1, wherein the material of the heat conducting plate is aluminum nitride, aluminum oxide, or silicon carbide.

5. The laser diode surface mounting structure according to claim 1, wherein the material of the two or more metal plates is copper.

6. The laser diode surface mounting structure according to claim 1, wherein the material of the insulating frame is plastic, epoxy, or bakelite.

7. The laser diode surface mounting structure of claim 1, further comprising at least one additional electronic component.

8. The laser diode surface mounting structure of claim 7, wherein the at least one additional electronic component is a photodiode, an anti-static diode, a reverse bias protection diode, a capacitor, a transistor, an integrated circuit, or a surge suppression capacitor, and the at least one additional electronic component is connected to a metal plate to be electrically connected, the electrically connected metal plate being held by the insulating frame.

9. the laser diode surface mounting structure of claim 1, wherein the at least one metal plate has a bump thereon.

10. The laser diode surface mounting structure of claim 1, wherein the first metal plate has a cut-out at an exit end of the at least one edge emitting laser diode wafer for passing laser light.

11. the laser diode surface mounting structure of claim 8, wherein the metal plate for carrying the at least one additional electronic component is formed with an inclined surface at a position for carrying the at least one additional electronic component, so that an angle formed by a normal vector of a light receiving surface of the at least one electronic component and a center line of the rear laser light is not 90 degrees.

12. The laser diode surface mounting structure of claim 1, further comprising an upper cover for covering the insulating frame.

13. the laser diode surface mounting structure according to claim 1, wherein each of said two or more metal plates spaced apart from each other and arranged in a plane has a bend to increase the force with which said insulating frame holds each of said metal plates.

14. The laser diode surface mounting structure of claim 1, further comprising an optical element held by the insulating frame.

15. The laser diode surface mounting structure of claim 1, further comprising an optical element held by the upper cover.

16. The laser diode surface mounting structure of claim 1, further comprising an optical element held by a bendable metal plate.

17. A laser diode surface mounting structure according to claim 14, 15 or 16, wherein said optical element is a lens, filter, diffraction grating, prism, polarizer, optical crystal, or nonlinear optical crystal.

18. The laser diode surface mounting structure of claim 1, further comprising a printed circuit board having a body and a surface conductor layer on the body, wherein the first metal plate is connected to the surface conductor layer.

Technical Field

The invention relates to a surface mounting structure of a laser diode, in particular to an edge-emitting laser diode packaging structure using Surface Mounting Technology (SMT), which can meet the requirements of large current, high heat dissipation and no thermal stress.

Background

The heat-conducting plate (100) is based on a substrate (100) and then atoms are deposited on the substrate by various deposition methods, so that the epitaxial layer (101) is mostly gallium arsenide (GaAs) crystal for red and near infrared light (0.7 ~ 1.1 um) laser diode wafers, the infrared light (1.1 ~ 1.9 um) crystal is mostly indium phosphide (InP) crystal which acts on a mechanically supporting and dissipating thermal resonant cavity, which is about 0.3mm thick, the epitaxial layer is a semiconductor compound consisting of arsenic, gallium, indium, phosphorus, aluminum, etc., subdivided with near ten layers, the aggregate jumper wire (106) is a jumper wire (1 um.) which is a thermally conductive layer, which is a thermal expansion coefficient of about 10 mm thick, which is a thermal expansion coefficient of about 10 m) and a laser thermal stress-absorbing layer, which is a thermal expansion coefficient of about 10, which is not too low, and is not capable of being bonded to a conventional thermal expansion coefficient of high power (i.e. greater than 50 mW) laser diode, the heat-conducting plate, and the conventional laser diode chip (100) is a thermal diode chip, and is not capable of being bonded to a thermal expansion coefficient of being a thermal expansion coefficient of high thermal expansion coefficient of being a thermal expansion coefficient of thermal expansion, and thermal expansion coefficient of thermal expansion, which is not capable of high thermal expansion, which is not capable of being a thermal expansion coefficient of being too low, which is not capable of being generated by a conventional thermal expansion, and thermal expansion, which is not capable of being generated by a conventional thermal diode chip (e. being a thermal diode chip (100) being a conventional thermal diode chip, which is not capable of being formed by a thermal diode chip, which is not capable of being a thermal diode chip (100) being a thermal diode chip, and thermal diode chip, which is not capable of being deposited on a thermal diode chip, which is not capable of being a thermal diode chip (100, which is not capable of being deposited on a thermal diode chip, which is not capable of being formed by a laser chip (100, which is not capable of being deposited on a laser chip 100, and is not capable of being deposited on a substrate, which is not capable of being deposited on a substrate (100, which is not capable of being deposited on a substrate, which is not capable of being a laser chip 100, which is not capable of being deposited on a substrate, which is not capable of being deposited on a laser chip (100, which is not capable of being a laser chip, which is not capable of being deposited on a laser chip, and not capable of being deposited on a substrate, which is not capable of being deposited on a laser chip 100, which is not capable of being deposited on a laser.

Therefore, the conventional laser diode chip structure obviously cannot satisfy three requirements of large current, high heat dissipation and no thermal stress at the same time, and has a great improvement space, which is further described as follows:

US5825054A uses silicon as a heat conducting plate, which is a semiconductor but has a low conductivity and is not comparable to metal. The thermal conductivity of silicon is 149W/(mK) (hereinafter, the unit of thermal conductivity is as such and is omitted), and the coefficient of expansion is 2.6 ppm/DEG C (hereinafter, the unit of coefficient of expansion is as such and is omitted); and the thermal conductivity 285 and the thermal expansion coefficient of aluminum nitride (AlN) are 4.5, which are closer to 6.86 of gallium arsenide and 4.60 of indium phosphide, and the thermal conductivity is better. The heat conduction is conducted by long and long plug-in pins (leads), the path is too long, and the application of medium and high power (more than 100 mW) is not possible.

DE102015114292a1 discloses two embodiments, one in which the laser chip is placed directly on the pins and the other in which FR4 or a ceramic PCB is used. Although copper is a good conductor of heat and electricity, its expansion coefficient of 16.5 is very different from that of GaAs crystal 6.86, and it is impossible to apply high power. US9379517B2 also does not use a thermally conductive plate and similarly cannot carry a laser wafer with a high heat dissipation capacity.

US9728935 metallizes both the top and bottom surfaces and the sides of an aluminum nitride thermal plate to provide electrical current through the thermal plate. However, the heat conducting plate is plated with gold on its surface, which has a limited thickness and a long current path, which is disadvantageous for high power.

US8130807 mentions the use of tungsten copper (CuW) as the thermal conductor plate, although the coefficient of thermal expansion of CuW (6.5 ppm/c) is close to that of gallium arsenide (6.86 ppm/c), it is very low (170W/m seed K), is less abundant than aluminum nitride (2850W/m seed K), and cannot be used for high power.

US2018/0062346a1 discloses a method of bonding a plurality of laser diodes in series, wherein the heat conducting plate is plated with gold on the top and bottom, and does not conduct electricity on the top and bottom, as in the case of the known aluminum nitride substrate. With the structure, the routing of the heat conducting plate is completely on a single side and is not symmetrical, so that the thermal stress is inevitably generated.

Therefore, the package structure of the existing laser diode suffers from the drawbacks mentioned above, and the present invention is directed to a surface mounting structure of laser diode that can solve the above problems at once.

disclosure of Invention

The main objective of the present invention is to provide a surface mounting structure of a laser diode, which can satisfy the important requirements that the heat generated by the edge emitting laser diode is concentrated in the epitaxial layer of the laser resonator and must be dissipated quickly, the thermal expansion coefficient of the heat conducting plate contacting with the epitaxial layer must be close to that of the epitaxial layer so as not to generate thermal stress, and the jumper wire must be distributed symmetrically on the wafer, so as to provide a surface mounting structure of a laser diode that can satisfy the requirements of large current, high heat dissipation and no thermal stress, so as to overcome the defects and blind spots of the prior art.

Another object of the present invention is to provide a surface mounting structure for medium and high power laser diode, which can dissipate heat quickly and effectively, so as to maintain the laser diode with better light-emitting efficiency and longer lifetime.

A surface mounting structure of laser diode according to the present invention comprises

At least one side-emitting laser diode chip, which includes two electrodes having an anode and a cathode;

A heat conducting plate having an upper conductive layer, a lower conductive layer and at least one conductive through hole penetrating through the upper conductive layer and the lower conductive layer for carrying one electrode of the two electrodes of the at least one edge-emitting laser diode chip, the at least one conductive through hole for electrically conducting the upper conductive layer and the lower conductive layer;

More than two metal plates which are mutually spaced and arranged on a plane, wherein a first metal plate is arranged below the heat conducting plate and is contacted with the lower conductive layer of the heat conducting plate, a second metal plate is arranged adjacent to and is separated from the first metal plate, and the second metal plate is electrically connected with the other electrode of the two electrodes by at least one jumper; and

An insulating frame with an opening, which is arranged above the two or more metal plates and used for holding the two or more metal plates, wherein the opening is used for the laser light emitted by the at least one side-emitting laser diode wafer to pass through.

According to the invention, the laser diode wafer is carried on the heat conducting plate, the thickness of the body of the heat conducting plate is about 0.3mm, and the thickness is not too thick, so that the function of the invention is firstly heat conduction, and secondly, the thermal stress generated between the laser diode wafer and the heat conducting plate due to different thermal expansion coefficients is avoided. The main output laser beam is emitted forward to the outside of the package, and an auxiliary output laser beam, which has a direction opposite to that of the main output laser beam and is emitted to a photodiode at the rear, has an intensity about fifty times that of the auxiliary output laser beam. The heat-conducting plate is preferably made of a material with high thermal conductivity and thermal expansion coefficient close to that of the laser diode chip substrate (GaAs or InP), such as SiC (thermal expansion coefficient 4.0), AlN or alumina (7.8), to reduce thermal stress. The upper and lower layers of the heat-conducting plate are both plated with thin-film conductors (e.g., gold, with a thickness of about several um to avoid thermal stress), and a through hole is drilled from top to bottom, and a conductor (e.g., gold) is also provided in the through hole, so that the upper and lower layers can conduct electricity. The heat conducting plate can be used as the heat dissipated by the laser diode chip carried by the heat conducting plate, and extends and expands to the left and right or to the front and back, so as to realize better heat dissipating capability. The heat conducting plate is placed on the first metal plate at the forefront, the thickness of the heat conducting plate is about 0.2mm, the heat conducting plate does not need to be too thick, the heat conducting plate is made of copper plated with tin, and the heat conducting plate has the functions of heat conducting and electricity conducting.

In the present invention, the manufacturing method of the metal plate is similar to the known lead frame of the integrated circuit, and the mass production is easy. The copper has a thermal expansion coefficient of 16.5, is completely different from gallium arsenide or indium phosphide crystals, and is not suitable for directly bearing gallium arsenide or indium phosphide crystals, so that the invention changes an aluminum nitride or aluminum oxide heat-conducting plate to bear gallium arsenide crystals, and then a metal plate with a tin-plated copper body to bear an aluminum nitride heat-conducting plate. Since the thermal expansion coefficients of aluminum nitride or aluminum oxide and copper are very different, it is expected that a large thermal stress will exist between the thermal conductive plate and the metal plate, however, this thermal stress will not distort the epitaxial layer and will not result in a reduction of the laser lifetime, because aluminum nitride or aluminum oxide is very hard (8 and 9 mohs hardness, respectively) and copper is much softer (3 mohs hardness), so that this thermal stress will distort copper rather than aluminum nitride, the epitaxial layer will not be distorted, and the laser quality can be ensured.

The current flows from the first metal plate to the second metal plate through the heat conducting plate, the laser wafer and the jumper wire. Similarly, other metal plates can extend left and right or backward depending on the heat and current dissipated by the electronic components carried by the metal plates, so as to achieve better heat dissipation capability and current carrying capability. The jumper wires are divided into two groups which are respectively arranged at the left side and the right side of the laser wafer to ensure that the laser wafer is symmetrical so as to reduce the thermal stress. The preferred arrangement of the jumper is a splayed opening to avoid shielding the laser light which is back-emitted to the electronic element or the optical element. Since the intensity of laser varies greatly with temperature, the present invention selectively uses a photodiode behind the laser diode to monitor the intensity of emitted light, and then inputs the light into the inverting terminal of an operational amplifier or a transistor to drive the laser diode, thereby realizing a negative feedback light intensity stabilizing circuit, all the components of which can be installed in the package. The first metal plate and the second metal plate can be (but are not limited to) Surface Mount Technology (SMT) soldered on a surface conductor (typically copper foil) on a printed circuit board, and the entire laser diode package can be mounted on the circuit board with good electrical and thermal conductivity. The body of the printed circuit board is located below the surface conductor, and may be made of known FR4 (glass fiber reinforced resin), or aluminum, aluminum nitride or aluminum oxide, which has better heat dissipation efficiency. With the structure, most of the heat generated by the epitaxial layer is directly conducted to the body of the printed circuit board through the thin heat conducting plate and the thin first metal plate which can be greatly extended, the path is short, and the heat conducting speed is very high. The current path is almost the same as the heat flow and is very short, and the current passes through the epitaxial layer directly from the surface conductor of the printed circuit board through the very thin first metal plate and the very thin heat conducting plate and then reaches the second metal plate through the jumper wire, unlike the prior art which needs another long jumper wire, the parasitic inductance and capacitance of the structure are very low, and the structure can be used for high-speed, large-current and high-power operation.

In order to maintain the relative positions of all the metal plates constant, an insulating frame is used for holding the metal plates. The insulating frame has an opening for laser emission, accommodates the laser diode and other components, and protects the components from external forces.

In the present invention, an upper cover may be added to cover the insulating frame.

In order to increase the holding force of the insulating frame to the metal plate, one or more convex hulls (bump out) can be selectively added on the two sides of the metal plate, and the convex hulls on the two sides are still in bilateral symmetry with the center line so as to avoid thermal stress. The invention improves the existing metal plate into a plurality of bent parts, which can increase the holding force of the insulating frame to the metal plate, so that the metal plate is not easy to rotate or be pulled to separate from the insulating frame.

In order to monitor the output power of the laser diode, a photodiode, a third metal plate and a fourth metal plate can be selectively installed behind the laser diode, and the photodiode, the third metal plate and the fourth metal plate can be held by the insulating frame. In order to increase the performance of the laser diode, electronic devices can be selectively mounted on the metal plate, two embodiments are listed: the first example is a smaller device, two leads of which are connected to the first metal plate and the second metal plate like the laser diode chip, and is suitable for mounting the device such as the anti-electrostatic diode, the reverse bias protection diode, the capacitor or the surge suppression capacitor, etc. to protect the laser diode. In practice, the laser diode is easily damaged by static electricity or surge, and if there is a protection device beside the laser diode, the lifetime of the laser diode can be greatly prolonged. The second example is a larger device with one lead connected to the first or second metal plate and one pole of the laser diode chip and the other metal plate connected to the other metal plate, which is suitable for mounting a current sensing resistor or thermistor to monitor the current and temperature of the laser diode chip. If the device generates significant heat, it is considered to move its position away from the laser diode chip to maintain the symmetry of heat dissipation. If the electronic device has many metal plates, it can be installed with metal plates, such as MOSFET for driving the laser diode, integrated circuit or the above-mentioned negative feedback light intensity stabilizing circuit, which must be very close to the laser diode to avoid parasitic inductance and capacitance, so as to be installed beside the laser diode to realize high-speed large current pulse.

_{3 5}in order to increase the performance of the laser diode, one or more optical elements are optionally added, placed at the exit end, clamped and fixed by an insulating frame, a groove is provided at the left and right sides of the opening of the insulating frame to accommodate the edge of the optical element, the beam of the edge-emitting laser diode is necessarily formed into an elliptical cone of light with a considerable astigmatism (astigmatism), which is disadvantageous for precision applications, and it is often necessary to modify the beam by optical elements to be easily applied, for example, a cylindrical mirror or prism is added to convert the elliptical cone of light into a circular shape, furthermore, most laser applications use collimated light beams, so that the invention can place a collimating mirror (convex lens) at the exit end of the laser light to converge the divergent light cone into an yttrium beam, and then a diffraction grating (or hologram) is added to generate specific patterns, or an optical crystal (Nd: aluminum collimator) is added to generate solid state laser, and a nonlinear crystal (for example, potassia phosphate), a large potassia phosphate field, 4-p, or a polarization generator is added to generate a small beam, and the whole laser beam can be fixed by a large beam focusing lens, and a small optical element before the laser beam can be fixed by a large beam focusing lens, and a large optical element, such as a large beam focusing lens, a small optical element, a half-focusing lens, a small optical element, a small beam can be added to increase the optical element can be used before the laser beam can be used for the laser beam can be used.

The first metal plate can be enlarged to increase the heat dissipation effect, but a notch can be optionally formed on the first metal plate, and the notch is in a V shape, so as to prevent the enlarged first metal plate from blocking the emitted light. Thus, the first metal plate is large for heat dissipation, and emergent light cannot be blocked. The cut-out may also be U-shaped or otherwise, for example, after the light cone is converged into collimated light by adding a collimating mirror as described above, the cut-out may be U-shaped, so that a larger area of the first metal plate is available for conducting heat.

In order to increase the light receiving area of the photodiode, the middle section of the third metal plate can be selectively twisted, so that the middle section and the photodiode carried by the middle section are not kept horizontal any more, but are inclined at an angle, thereby increasing the effective light receiving area. The middle section of the third metal plate near the laser diode can be bent into an L shape to support the photodiode and keep it from falling before mounting. The lowest part of the twisted middle section is maintained above the lower layer of the original metal plate and is not too low, so that the surface mounting can be carried out smoothly.

The cover may also hold one or more optical components if necessary to protect the laser chip, jumpers, etc., and may also have a recess at the exit end to receive an edge of the optical component to retain the optical component between the cover and the first metal plate.

The optical element may also be held by half-cutting a portion of the metal plate and then folding it.

Multiple laser diode chips can be mounted on the same laser diode package, and the chips can be connected in series or in parallel.

The same laser diode package can also be connected in series and in parallel with multiple laser diode chips, or multiple laser diode chips can be connected in series and then in parallel, or multiple laser diode chips can be connected in parallel and then in series. Different series and parallel configurations can be adopted for different power supply voltages, and the optimal power supply use efficiency can be obtained.

drawings

FIG. 1 includes FIG. 1 (a) and FIG. 1 (b), in which FIG. 1 (a) shows a laser diode chip structure and FIG. 1 (b) shows a surface mounting structure of a conventional edge-emitting medium-high power laser diode.

FIG. 2, including FIG. 2 (a), FIG. 2 (b), FIG. 2 (c) and FIG. 2 (d), shows the surface mounting structure of the edge-emitting laser diode of the present invention, in which FIG. 2 (a) is a side view of the heat-conducting plate, FIG. 2 (b) is a top view without the insulating frame, FIG. 2 (c) is a top view with the insulating frame, and FIG. 2 (d) is a side view of the combination of the laser diode chip, the heat-conducting plate and the printed circuit board.

FIG. 3, including FIG. 3 (a) and FIG. 3 (b), shows a circuit diagram of a laser diode surface mounting structure having a plurality of laser diodes according to the present invention, wherein FIG. 3 (a) is a parallel diagram of three laser diode chips, and FIG. 3 (b) is a series diagram of three laser diode chips.

Fig. 4 includes fig. 4 (a) and fig. 4 (b), in which fig. 4 (a) shows a top view of the third metal plate of the present invention carrying an additional electronic component, and fig. 4 (b) shows a side view of the third metal plate of the present invention carrying an additional electronic component in an inclined configuration.

FIG. 5 shows the present invention holding an optical element with a bent metal plate.

Description of the symbols

10 laser diode surface mounting structure

20 one-side emitting laser diode

21 two electrodes

211 anode

212 cathode

30 heat conducting plate

31 upper conductive layer

32 lower conductive layer

33 at least one conductor through hole

More than 40 metal plates

40-1 first metal plate

40-2 second metal plate

40-3 third metal plate

40-4 fourth metal plate

50, 50-1, 50-2, 50-3 jumper

60 insulating frame

61 opening

62 main output laser elliptic light cone

70 electronic component

71 laser exit port incision

73-1, 73-2 sheet metal bending

80 printed circuit board

Surface conductor layer of 81 printed circuit board

82 printed circuit board body

90 optical element

100 substrate

101 epitaxial layer

102 jumper

103 heat conducting plate

104 outer casing

105. 109 metal layer

106 laser resonant cavity

107 elliptic light cone

108 pairs of output laser directions

110 heat sink.

Detailed Description

FIG. 2, including FIG. 2 (a), FIG. 2 (b), FIG. 2 (c) and FIG. 2 (d), shows a surface mount structure of an edge-emitting laser diode according to the present invention, wherein FIG. 2 (a) is a side view of a heat-conducting plate; FIG. 2 (b) is a top view of a laser diode chip mounted on a metal plate without an insulating frame; FIG. 2 (c) is an overall structural view of the structure shown in FIG. 2 (b) including an insulating frame; and FIG. 2 (d) is a side view of the laser diode chip mounted on the heat-conducting plate, the first metal plate and the printed circuit board in this order. Referring to fig. 2 (a), fig. 2 (b), fig. 2 (c) and fig. 2 (d), a laser diode surface mounting structure 10 according to an embodiment of the present invention includes:

At least one side-emitting laser diode chip 20, which includes two electrodes 21 having an anode 211 and a cathode 212;

A heat conducting plate 30 having an upper conductive layer 31, a lower conductive layer 32 and at least one conductive through hole 33 (shown in FIG. 2 (a)) passing through the upper conductive layer and the lower conductive layer for carrying one electrode 211 or 212 of the two electrodes 21 of the at least one edge-emitting laser diode chip, the at least one conductive through hole for electrically conducting the upper conductive layer and the lower conductive layer;

More than two metal plates 40 which are spaced from each other and arranged on a plane, wherein a first metal plate 40-1 is arranged below the heat conducting plate and is contacted with the lower conductive layer of the heat conducting plate, a second metal plate 40-2 is arranged adjacent to and spaced from the first metal plate, and the second metal plate is electrically connected with the other electrode 212 or 211 of the two electrodes by at least one jumper 50; and

An insulating frame 60 having an opening 61 is disposed above the two or more metal plates for holding the two or more metal plates, wherein the opening is used for passing the laser emitted from the at least one edge-emitting laser diode chip.

In the surface mounting structure of the laser diode of the present invention, the at least one jumper wire 50 is two jumper wires 50-1, 50-2 connected to the other pole 212 or 211 of the at least one edge-emitting laser diode chip 20, which are connected in a manner of being symmetrically distributed on the left and right sides of the at least one edge-emitting laser diode chip.

As shown in the combination diagram of fig. 2 (d), the laser diode surface mounting structure 10 of the present invention can be mounted on a printed circuit board 80, which includes a body 82 and a surface conductor layer 81 plated thereon, wherein the first metal plate 41 is soldered on the surface conductor layer 81. Of course, the surface conductor layer 81 can also be used for soldering other metal plates.

In addition, referring to fig. 3, the at least one edge emitting laser diode chip is plural, and these plural edge emitting laser diode chips are electrically connected, as shown in fig. 3 (a), it can be configured by parallel connection of three laser diode chips 20, or by series connection of three laser diodes 20 as shown in fig. 3 (b), and of course, it can be configured by various series and parallel connections as required.

In the present invention, the heat conducting plate 30 is made of aluminum nitride, aluminum oxide or silicon carbide; the more than two metal plates are made of copper; the insulating frame is made of plastic, epoxy resin or bakelite.

In addition, as shown in fig. 2, the laser diode surface mounting structure 100 of the present invention may further include at least one additional electronic component 70, wherein the at least one additional electronic component may be a photodiode, an anti-static diode, a reverse bias protection diode, a capacitor, a transistor, an integrated circuit, or a surge suppression capacitor, and the at least one additional electronic component is connected to a third metal plate 40-3, a fourth metal plate 40-4, and a jumper 50-3, which are required to be electrically connected, and the metal plates 40-3 and 40-4 are held by the insulating frame.

In the present invention, the at least one metal plate 40 has convex hulls on both sides thereof, and the convex hulls on both sides are symmetrical with respect to the center line. In addition, the first metal plate 40-1 has a notch 71 at the laser exit end of the at least one edge emitting laser diode chip 20 (see fig. 4 (a)) for the laser to pass through.

referring to fig. 4, fig. 4 (a) is a top view, and fig. 4 (b) is a side view of the third metal plate carrying the electronic component 70, in the surface mounting structure of the laser diode of the present invention for carrying the at least one additional electronic component 70, when it is a photodiode, the third metal plate 40-3 connected thereto is bent to form a slope at the position for carrying the at least one additional electronic component. As shown in the side view of fig. 4 (b), unlike other metal plates that are in the same plane (as shown by the dotted line in fig. 4 (b)), the angle formed by the normal vector of the light receiving surface of the at least one electronic component and the central line of the rear laser is not 90 degrees in this embodiment, so as to increase the effective light receiving area for cooperating with a feedback control circuit to stabilize the laser intensity. The first metal plate 40-1 is expanded outward to enhance heat dissipation and has a cut at the laser exit end for the laser to pass through.

The laser diode surface mounting structure of the present invention may further comprise an upper cover (not shown) for covering the insulating frame. The two or more metal plates spaced apart from each other and disposed on a plane have bends (but are still on the same plane) as shown in the left and right sides of the first metal plate 40-1 and the second metal plate 40-2, respectively, in fig. 4 (a), to increase the force with which the insulating frame holds each of the metal plates.

As shown in fig. 5, the surface mounting structure of the laser diode of the present invention may further comprise an optical element 90 mounted in front of the edge-emitting laser diode 20, which may be held by the insulating frame, or held by the upper cover, or held by a bendable metal plate, wherein the optical element 90 is a lens, a filter, a diffraction grating, a prism, a polarizer, an optical crystal, or a nonlinear optical crystal for processing the beam of the edge-emitting laser diode as required.

In addition, the laser diode surface mounting structure of the present invention, wherein the at least one additional electronic component is a laser intensity stabilizing circuit.