阅读说明：本技术 一种片上集成级联放大半导体激光器 (On-chip integrated cascade amplification semiconductor laser ) 是由 陈广飞 于 2019-07-25 设计创作，主要内容包括：本发明公开了一种片上集成级联放大半导体激光器,其结构包括激光头、安装座、箱体,激光头以内嵌的形式安装在箱体上,激光头与箱体相连接,安装座上设有箱体,箱体与安装座机械焊接,本发明的有益效果：通过在电线安装槽上开设通气孔,并将电线安装槽呈螺旋式设立并将其环绕在管体上,使得电线工作时产生的热量通过通气孔进入到空腔中,并通过空腔上的通气框将热量传递到对流壁层内,借助对流壁层将热量传递到散热腔中,并通过散热口向外输出,达到降低温度的效果,从而实现在不减小的驱动电流输入量的同时,可以有效的降低电线工作时产生的热量,以确保半导体激光器的光输出量的稳定性。(The invention discloses an on-chip integrated cascade amplification semiconductor laser, which structurally comprises a laser head, a mounting seat and a box body, wherein the laser head is arranged on the box body in an embedded mode, the laser head is connected with the box body, the box body is arranged on the mounting seat, and the box body is mechanically welded with the mounting seat, so that the semiconductor laser has the beneficial effects that: through seting up the air vent on the electric wire mounting groove, and be spiral the establishment and encircle it on the body with the electric wire mounting groove, make the heat that the electric wire during operation produced enter into the cavity through the air vent, and pass through the ventilation frame on the cavity with heat transfer to in the convection wall layer, with the help of convection wall layer with heat transfer to the heat dissipation chamber, and outwards export through the thermovent, reach the effect that reduces the temperature, thereby realize in the drive current input volume that does not reduce, can effectually reduce the heat that the electric wire during operation produced, with the stability of ensureing semiconductor laser's light output volume.)

1. The utility model provides an on-chip integrated cascade amplification semiconductor laser, its structure includes laser head (1), mount pad (2), box (3), its characterized in that:

the laser head (1) is installed on the box body (3) in an embedded mode, the laser head (1) is connected with the box body (3), the box body (3) is arranged on the mounting seat (2), and the box body (3) is mechanically welded with the mounting seat (2);

Laser head (1) comprises heat abstractor (11), laser delivery outlet (12), mounting groove (13), heat abstractor (11) and laser delivery outlet (12) fixed connection, heat abstractor (11) are located the concentrated output of laser delivery outlet (12) central authorities, mounting groove (13) central authorities are located in laser delivery outlet (12), mounting groove (13) and laser delivery outlet (12) fixed connection.

2. The on-chip integrated cascaded amplifying semiconductor laser as set forth in claim 1, wherein: heat abstractor (11) comprises semiconductor laser transmission head (a), thermovent (b), solid layer (c), heat dissipation chamber (d), convection current wall layer (e), helical tube (f), semiconductor laser transmission head (a) is connected with thermovent (b), thermovent (b) runs through solid layer (c), thermovent (b) communicates with each other with heat dissipation chamber (d), be equipped with convection current wall layer (e) in heat dissipation chamber (d), heat dissipation chamber (d) communicates with each other with flow wall layer (e), convection current wall layer (e) is equipped with helical tube (f).

3. the on-chip integrated cascaded amplifying semiconductor laser as set forth in claim 2, wherein: convection current wall layer (e) comprise fixed sheet layer (e1), corrugated sheet layer (e2), recess (e3), convection current frame (e4), be equipped with convection current frame (e4) on fixed sheet layer (e1), convection current frame (e4) is run through fixed sheet layer (e1), be equipped with corrugated sheet layer (e2) in fixed sheet layer (e1), recess (e3) is located corrugated sheet layer (e2), corrugated sheet layer (e2) is run through by recess (e 3).

4. The on-chip integrated cascaded amplifying semiconductor laser as set forth in claim 2, wherein: the spiral pipeline (f) is composed of a vent hole (f1), a pipe body (f2), a large vent frame (f3), an electric wire installation groove (f4) and a cavity (f5), the vent hole (f1) penetrates through the electric wire installation groove (f4), the vent hole (f1) is communicated with the cavity (f5), the electric wire installation groove (f4) is spirally wound on the pipe body (f2), the electric wire installation groove (f4) is installed on the pipe body (f2) in an embedded mode, the large vent frame (f3) is installed on the pipe body (f2) in a symmetrical structure, and the large vent frame (f3) and the electric wire installation groove (f4) are distributed at intervals.

5. The on-chip integrated cascaded amplifying semiconductor laser as set forth in claim 4, wherein: the large ventilation frame (f3) is set in a rectangular frame shape, a protective net is embedded in the large ventilation frame, and the large ventilation frame (f3) is communicated with the cavity (f 5).

Technical Field

The invention relates to the field of semiconductors, in particular to an on-chip integrated cascade amplification semiconductor laser.

Background

The semiconductor laser has the advantages of small volume, light weight, reliable operation, low power consumption, high efficiency and the like, so that the semiconductor laser is gradually popularized and applied, the traditional semiconductor laser equipment can not meet the existing requirements of people along with the improvement of the living standard of people, and the current semiconductor laser has the following defects:

The light emitting wavelength of the semiconductor laser changes along with the temperature change, the light emitting intensity of the semiconductor laser is correspondingly reduced by 1% when the temperature rises once, the heat generated by the work of the semiconductor laser is reduced by reducing the driving current of the traditional semiconductor laser, but the light output of the semiconductor laser is reduced while the driving current is reduced.

disclosure of Invention

Aiming at the defects of the prior art, the invention is realized by the following technical scheme: an on-chip integrated cascade amplification semiconductor laser structurally comprises a laser head, a mounting seat and a box body, wherein the laser head is mounted on the box body in an embedded mode and connected with the box body;

The laser head comprises a heat dissipation device, a laser output port and a mounting groove, wherein the heat dissipation device is fixedly connected with the laser output port, the heat dissipation device is located at the central concentrated output of the laser output port, the laser output port is located at the central of the mounting groove, and the mounting groove is fixedly connected with the laser output port.

As a further optimization of the invention, the heat dissipation device comprises a semiconductor laser transmission head, a heat dissipation port, a solid layer, a heat dissipation cavity, a convection wall layer and a spiral pipeline, wherein the semiconductor laser transmission head is communicated with a laser output port, the semiconductor laser transmission head is connected with the heat dissipation port, the heat dissipation port is arranged on the solid layer, the solid layer is penetrated through by the heat dissipation port, the heat dissipation port is communicated with the heat dissipation cavity, the convection wall layer is arranged in the heat dissipation cavity, the heat dissipation cavity is communicated with the convection wall layer, the heat dissipation device is arranged right south of the semiconductor laser transmission head, and the convection wall layer is provided with the spiral pipeline.

As a further optimization of the invention, the convection wall layer is composed of a fixed plate layer, a corrugated plate layer, three grooves and a convection frame, the convection frame is arranged on the fixed plate layer, the fixed plate layer is penetrated by the convection frame, the corrugated plate layer is arranged in the fixed plate layer, the positions between the corrugated plate layer and the corrugated plate layer are vertically arranged and are mutually parallel, the number of the grooves is six, the grooves are positioned on the corrugated plate layer, and the corrugated plate layer is penetrated by the grooves.

as a further optimization of the invention, the spiral pipeline is composed of a plurality of vent holes, a pipe body, a large vent frame, two wire mounting grooves and cavities, the vent holes are arranged on the wire mounting grooves, the vent holes penetrate through the wire mounting grooves, the vent holes are communicated with the cavities, the two wire mounting grooves are spirally surrounded on the pipe body, the wire mounting grooves are embedded in the pipe body, the cavities are cavities surrounded by the inner wall of the pipe body, the large vent frame is provided with two large vent frames, the large vent frames are symmetrically mounted on the pipe body, and the large vent frames and the wire mounting grooves are distributed at intervals.

As a further optimization of the invention, the large ventilation frame is set up in a rectangular frame shape, a protective net is embedded in the large ventilation frame, and the large ventilation frame is communicated with the cavity.

Advantageous effects

The invention relates to an on-chip integrated cascade amplification semiconductor laser, wherein an electric wire is arranged on an electric wire mounting groove, the electric wire is spirally wound along with the electric wire due to the spiral winding of the electric wire mounting groove on a pipe body, and a vent hole is arranged on the electric wire mounting groove so that the vent hole is attached to the surface layer of the electric wire, when the electric wire supplies current for the work of a semiconductor laser transmission head, the generated heat can enter the cavity through the vent hole, and the ventilation frame is arranged on the pipe body so that the ventilation frame realizes the intercommunication between the air in a convection wall layer and the cavity, thereby achieving the purpose of discharging the heat generated by the work of the electric wire, as the convection wall layer is provided with the convection frame, and the corrugated plate layer is arranged on the convection frame, different circulation channels are formed between the air flowing from the convection wall layer to the outside the convection wall layer and flowing from the convection wall layer to the, and the corrugated plate layer is provided with the grooves, so that the flowing track can be changed at any time when air is exchanged, and after the air inside and outside the flow wall layer is exchanged, the air with heat enters the heat dissipation cavity and is output outwards through the heat dissipation port, and the effect of reducing the temperature is achieved.

Compared with the prior art, the invention has the following advantages:

According to the invention, the vent hole is formed in the wire mounting groove, the wire mounting groove is spirally arranged and is surrounded on the tube body, so that heat generated during the working of the wire enters the cavity through the vent hole, is transferred to the convection wall layer through the vent frame on the cavity, is transferred to the heat dissipation cavity through the convection wall layer and is output outwards through the heat dissipation port, and the effect of reducing the temperature is achieved, so that the heat generated during the working of the wire can be effectively reduced while the input quantity of the driving current is not reduced, and the stability of the light output quantity of the semiconductor laser is ensured.

drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

Fig. 1 is a schematic structural diagram of an on-chip integrated cascade amplifying semiconductor laser according to the present invention.

Fig. 2 is a front view of a laser head of an on-chip integrated cascade amplifying semiconductor laser according to the present invention.

fig. 3 is a top view of a heat dissipation device of an on-chip integrated cascade amplifying semiconductor laser according to the present invention.

Fig. 4 is a perspective view of a convection wall layer of an on-chip integrated cascade amplifying semiconductor laser according to the present invention.

Fig. 5 is a cross-sectional view of a spiral pipe of an on-chip integrated cascade amplifying semiconductor laser according to the present invention.

Fig. 6 is a perspective view of a spiral pipe of an on-chip integrated cascade amplifying semiconductor laser according to the present invention.

In the figure, a laser head-1, a mounting seat-2, a box body-3, a heat dissipation device-11, a laser output port-12, a mounting groove-13, a semiconductor laser transmission head-a, a heat dissipation port-b, a solid layer-c, a heat dissipation cavity-d, a convection wall layer-e, a spiral pipeline-f, a fixed plate layer-e 1, a corrugated plate layer-e 2, a groove-e 3, a convection frame-e 4, a vent hole-f 1, a pipe body-f 2, a large ventilation frame-f 3, an electric wire mounting groove-f 4 and a cavity-f 5.

Detailed Description

In order to make the technical means, the original characteristics, the achieved purposes and the effects of the invention easy to understand, the following description and the accompanying drawings further illustrate the preferred embodiments of the invention.