阅读说明：本技术 一种基于半导体增益的低阈值Tamm态等离子激光器 (Low-threshold Tamm-state plasma laser based on semiconductor gain ) 是由 王涛 杨杰 张浩然 常浩泽 王高峰 于 2021-07-20 设计创作，主要内容包括：本发明公开了一种基于半导体增益的低阈值Tamm态等离子激光器,该激光器由衬底,布拉格反射镜(DBRs),有源增益层,金属层和金属圆柱阵列组成。在性能上与传统的激光器相比,本发明的激光器谐振腔具有超窄线宽,进而使得Q值很高,阈值很低。在制备上,在实际的器件制备中用银层代替了传统的上层DBR,减少了激光器的体积。且本发明采用半导体增益材料替代了传统的增益,大大减小了制备工艺的复杂性,同时极大节约了激光器的制作成本,展示出了巨大的应用前景。(The invention discloses a low-threshold Tamm state plasma laser based on semiconductor gain. Compared with the traditional laser in performance, the laser resonant cavity has ultra-narrow linewidth, so that the Q value is high and the threshold value is low. In preparation, the traditional upper DBR is replaced by the silver layer in actual device preparation, and the volume of the laser is reduced. In addition, the semiconductor gain material is adopted to replace the traditional gain, so that the complexity of the preparation process is greatly reduced, the manufacturing cost of the laser is greatly saved, and the laser has a huge application prospect.)