Bonding method of gold wire in semiconductor laser tube shell and semiconductor laser

文档序号：37638 发布日期：2021-09-24 浏览：40次中文

阅读说明：本技术 半导体激光器管壳内金线的键合方法和半导体激光器 (Bonding method of gold wire in semiconductor laser tube shell and semiconductor laser ) 是由蔡云龙陈晓华梅志伟李克晶翟风进潘乃营安思宇于 2021-06-11 设计创作，主要内容包括：本发明公开了一种半导体激光器管壳内金线的键合方法和半导体激光器,其中键合方法包括如下的步骤：步骤1,利用镭射打标机在半导体激光器管壳需要粘贴电极的位置打标,将至少两个电极分别粘贴固定在所述半导体激光器管壳内的打标位置,且两个待连接的电极之间存在高度差；步骤2,将所述金线一端焊接在两个待连接的电极中的较低的电极上；步骤3,将金线的另一端焊接在两个待连接的电极中的较高的电极上；步骤4,完成各电极之间的连接,实现各电极和半导体激光器管壳内各激光器芯片的串联。上述键合方法提高了金线键合的速度和精准度,提高了键合的自动化水平,保证了半导体激光器成品质量。(The invention discloses a bonding method of a gold wire in a semiconductor laser tube shell and a semiconductor laser, wherein the bonding method comprises the following steps: step 1, marking at the position of a semiconductor laser tube shell where an electrode needs to be adhered by using a laser marking machine, respectively adhering and fixing at least two electrodes at the marking position in the semiconductor laser tube shell, wherein a height difference exists between the two electrodes to be connected; step 2, welding one end of the gold wire on the lower electrode of the two electrodes to be connected; step 3, welding the other end of the gold wire on the higher electrode of the two electrodes to be connected; and 4, completing the connection between the electrodes, and realizing the series connection of the electrodes and the laser chips in the semiconductor laser tube shell. The bonding method improves the speed and the accuracy of gold wire bonding, improves the automation level of bonding and ensures the quality of the finished semiconductor laser.)

1. A bonding method of gold wires in a semiconductor laser tube shell is characterized by comprising the following steps:

step 2, welding one end of the gold wire on the lower electrode of the two electrodes to be connected;

step 3, welding the other end of the gold wire on the higher electrode of the two electrodes to be connected;

and 4, completing the connection between the electrodes, and realizing the series connection of the electrodes and the laser chips in the semiconductor laser tube shell.

2. The bonding method according to claim 1, wherein a positioning groove is preset at a marking position on the semiconductor laser package.

3. The bonding method according to claim 2, wherein the positioning groove is formed during the process of forming the semiconductor laser package.

4. The bonding method according to claim 1, wherein step 2 forms a first solder joint, and step 3 forms a second solder joint;

and step 3 further comprises the steps of planting a first solder ball on the second welding point and then cutting off the gold wire.

5. The bonding method according to claim 4, wherein prior to step 1, the bonding method further comprises:

testing and selecting technological parameters of gold wire welding in advance in an experimental mode;

determining and presetting optimal technological parameters of equipment for gold wire welding according to physical performance tests;

the process parameters include any one or more of: contact power, contact pressure, contact time, bonding power, or bonding pressure;

the physical property test comprises any one or more of: appearance observation, tension, thrust, cold and hot shock, high pressure poaching, and appearance observation, tension or thrust after cold and hot shock and high pressure poaching.

6. The bonding method according to claim 5, wherein the bonding power of the first pad and the second pad is 25-45% and the bonding pressure is 80-100 g.

7. The bonding method according to claim 5, wherein the gold wire has a diameter of 50 μm, the bonding power of the first pad is 35%, and the bonding pressure is 100 g; the bonding power of the second welding point is 30%, and the bonding pressure is 100 g.

8. The bonding method according to claim 1, wherein after the step 4, the bonding method further comprises:

and (4) carrying out physical property inspection and reflector coupling inspection on the bonded gold wires, and judging whether the gold wires are qualified.

9. The bonding method according to claim 1, wherein the electrode is an electrode strip or an electrode tube, and a gold plating layer is arranged on the surface of the electrode strip or the electrode tube; the laser chip comprises two rows of mutually parallel electrode strips or three electrode tubes, wherein two of the electrode strips or three electrode tubes are arranged in parallel with the two rows of the laser chips, and the other electrode strip or three electrode tubes are arranged at the end part of the semiconductor laser tube shell.

10. A semiconductor laser comprising a plurality of laser chips and at least two electrodes disposed in a package, wherein the electrodes are connected by a bonding method according to any one of claims 1 to 9.

Technical Field

The invention belongs to the technical field of semiconductor laser manufacturing, and particularly relates to a bonding method of a gold wire in a semiconductor laser tube shell and a semiconductor laser.

Background

The laser chips in the semiconductor laser are distributed in an array in the tube shell, and the laser chips are connected in series. In the serial connection line, in order to obtain a more stable connection structure, electrode strips are arranged between the chip rows and at the end parts of the chip rows as required, and the electrode strips are connected by gold wire bonding.

In the prior art, alloy wires are bonded in a manual bonding mode, wherein an automatic bonding machine is adopted to perform arc-crossing wire bonding between two electrode planes with the same height, so that the welding action between the two planes without height drop is completed. In the process, operators are required to perform gold wire bonding one by one in a visual mode, the production period is long, and the efficiency is low; the speed and quality of manual bonding completely depend on the experience of staff; moreover, because the thinner gold wires and welding spots are observed in a microscope, judgment errors often occur, and the gold wire bonding is inaccurate; the camera of the device has no automatic focusing function, and cannot better observe the tube core; because the automatic bonding machine is operated by a machine, the bonding planes are required to be attached consistently, and if one bonding plane is not attached in place, the abnormity of unstable bonding of gold wires, infirm welding points and the like can be caused.

Disclosure of Invention

In view of the above problems, the present invention discloses a bonding method of gold wires in a semiconductor laser package and a semiconductor laser to overcome the above problems or at least partially solve the above problems.

In order to achieve the purpose, the invention adopts the following technical scheme:

the invention provides a bonding method of a gold wire in a semiconductor laser tube shell, which comprises the following steps:

step 2, welding one end of the gold wire on the lower electrode of the two electrodes to be connected;

step 3, welding the other end of the gold wire on the higher electrode of the two electrodes to be connected;

and 4, completing the connection between the electrodes, and realizing the series connection of the electrodes and the laser chips in the semiconductor laser tube shell.

Optionally, a positioning groove is preset at the marking position on the semiconductor laser tube shell.

Optionally, the positioning groove is formed during processing and molding of the semiconductor laser tube shell.

Optionally, step 2 forms a first welding spot, and step 3 forms a second welding spot;

and step 3 further comprises the steps of planting a first solder ball on the second welding point and then cutting off the gold wire.

Optionally, before step 1, the bonding method further includes:

testing and selecting technological parameters of gold wire welding in advance in an experimental mode;

determining and presetting optimal technological parameters of equipment for gold wire welding according to physical performance tests;

the process parameters include any one or more of: contact power, contact pressure, contact time, bonding power, or bonding pressure;

Optionally, the bonding power of the first solder joint and the second solder joint is 25-45%, and the bonding pressure is 80-100 g.

Optionally, the diameter of the gold wire is 50 μm, the bonding power of the first solder joint is 35%, and the bonding pressure is 100 g; the bonding power of the second welding point is 30%, and the bonding pressure is 100 g.

Optionally, after the step 4, the bonding method further includes:

and (4) carrying out physical property inspection and reflector coupling inspection on the bonded gold wires, and judging whether the gold wires are qualified.

Optionally, the electrode is an electrode strip or an electrode tube, and a gold plating layer is arranged on the surface of the electrode strip or the electrode tube; the laser chip comprises two rows of mutually parallel electrode strips or three electrode tubes, wherein two of the electrode strips or three electrode tubes are arranged in parallel with the two rows of the laser chips, and the other electrode strip or three electrode tubes are arranged at the end part of the semiconductor laser tube shell.

The invention also provides a semiconductor laser, wherein a plurality of laser chips and at least two electrodes are arranged in a tube shell of the semiconductor laser, and the electrodes are connected by adopting the bonding method.

The invention has the advantages and beneficial effects that:

the bonding scheme adopts an automatic gold wire bonding process, and solves the problems of long production period and low efficiency of the traditional manual operation; the labor capacity of staff can be reduced, the operation is easy, the mastering is rapid, the speed of manual bonding is improved, and the defect that the quality completely depends on the experience of the staff is avoided; because the position of the electrode is fixed in advance, the produced product has better consistency, and the deviation of manual judgment is avoided; two planes with height difference can be seen clearly in the fixed focal length of the camera and bonding is completed through the camera adjustment of an automatic gold wire bonding machine; the consistency of the mounting and sticking of the bonding plane is fixed through laser marking, so that the abnormity that a gold wire is not stably bonded, a welding spot is not firm and the like is avoided; by optimizing the technological parameters, the gold wire bonding between two bonding planes with height difference can be realized; the radian of the bonded gold wire can support the gold wire not to collapse, so that the product quality is ensured; the gold wire bonding push-pull force meets the requirement, and can be replaced by other materials; this scheme can be applied to any product of gold wire bonding having a level difference bonding plane.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:

fig. 1 is a schematic flow chart of a bonding method of a gold wire in a semiconductor laser package according to an embodiment of the present invention;

fig. 2 is a schematic diagram of the structure of a semiconductor laser package in accordance with an embodiment of the present invention;

FIG. 3 is a pictorial view of a semiconductor laser package after bonding of an alloy wire to the package in accordance with an embodiment of the present invention;

in the figure: a is a first welding point, B is a second welding point, and C is a positioning groove or a point position mark; 1 is a first electrode strip, 2 is a second electrode strip, 3 is a third electrode strip, and 4 is a gold wire.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail and fully with reference to the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It is to be understood that the terms "comprises/comprising," "consisting of … …," or any other variation, are intended to cover a non-exclusive inclusion, such that a product, device, process, or method that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such product, device, process, or method if desired. Without further limitation, an element defined by the phrases "comprising/including … …," "consisting of … …," or "comprising" does not exclude the presence of other like elements in a product, device, process, or method that comprises the element.

It will be further understood that the terms "upper," "lower," "front," "rear," "left," "right," "top," "bottom," "inner," "outer," and the like, refer to an orientation or positional relationship as shown in the drawings, which is meant only to facilitate describing the invention and to simplify the description, and do not indicate or imply that the referenced device, component, or structure must have a particular orientation, be constructed or operated in a particular orientation, and is not to be construed as limiting the invention.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The technical solutions provided by the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

Example 1

Referring to fig. 1, embodiment 1 discloses a bonding method of a gold wire in a semiconductor laser package, which includes the following steps:

step 1, marking at the position of a semiconductor laser tube shell where an electrode needs to be adhered by using a laser marking machine, respectively adhering and fixing at least two electrodes at the marking position in the semiconductor laser tube shell, wherein a height difference exists between the two electrodes to be connected; the electrodes include original positive and negative electrodes on the semiconductor laser package, electrode strips or electrode tubes required to connect the rows of laser chips, electrodes on the semiconductor laser chips, and the like.

Step 2, welding one end of the gold wire on the lower electrode of the two electrodes to be connected; the number of gold wires needed between the electrodes is generally the same, and the specific number is designed and selected according to factors such as the power of the semiconductor laser, the diameter of the gold wires and the like.

And 3, welding the other end of the gold wire on the higher electrode of the two electrodes to be connected.

The gold wires between the two electrodes are connected, so that the welding between the two electrodes can be completed one by one, or one ends of all the gold wires can be firstly welded on the lower electrode, and then the other ends of the gold wires are respectively welded on the higher electrode.

And 4, completing the connection between the electrodes according to the sequence, so as to finally realize the series connection of the electrodes and the laser chips in the semiconductor laser tube shell, wherein the final bonding finished product is shown in fig. 3.

In conclusion, through the design of the bonding process method, the speed and the accuracy of gold wire bonding are improved, the automation level of bonding is improved, and the quality of a finished semiconductor laser product is ensured.

In an alternative embodiment, instead of laser marking, a positioning slot may be provided at the marking location instead of marking.

No matter the constant head tank or radium-shine mark, the positioning accuracy of electrode in the tube has all been improved, has guaranteed the quality of semiconductor laser product.

Specifically, the positioning groove is formed during the process of processing and molding the semiconductor laser package, for example, the positioning groove is formed by a design form of a molding die.

In one embodiment, step 2 forms a first solder joint a, and step 3 forms a second solder joint B;

and step 3 further comprises the steps of planting a first solder ball on the second welding point B and then cutting off the gold wire.

In a specific embodiment, before step 1, the bonding method further comprises:

testing and selecting technological parameters of gold wire welding in advance in an experimental mode;

determining and presetting optimal technological parameters of equipment for gold wire welding according to physical performance tests;

the process parameters include any one or more of: contact power, contact pressure, contact time, bonding power, or bonding pressure;

Before the experiment, the following experimental conditions were set, respectively:

a first solder joint: contact power; a contact pressure; (ii) a contact time; bonding time;

a second welding spot: contact power; a contact pressure; (ii) a contact time; bonding time;

first solder balls: contact power; a contact pressure; (ii) a contact time; bonding time;

under the condition that the parameters are not changed, setting the following two variables, namely bonding power and bonding pressure of the first welding point; and the bonding power and bonding pressure of the second solder joint;

9 experimental groups are set, and different parameter settings are respectively carried out on the bonding power and the bonding pressure of the first welding point and the bonding power and the bonding pressure of the second welding point, which is shown in the following table 1:

TABLE 1

Whether the experimental result is qualified is judged through outward appearance, pulling force, thrust, cold and hot impact and outward appearance, pulling force, thrust after the high pressure poaching, and the concrete standard is:

appearance: no welding spot falls off;

and (3) testing tension: more than 25 g;

and (3) thrust testing: more than 80 g;

the results of the 9 experimental groups are shown in table 2 below:

TABLE 2

Serial number

Appearance of the product

Tension force

Thrust force

Cold and hot shock

High pressure water boiling

Appearance of the product

Tension force

Thrust force

Results

Wherein OK represents pass, NG represents fail.

As can be seen from Table 2 above, the results of the 4-7 groups are all qualified, and the four groups of push-pull values are examined as shown in Table 3 below:

TABLE 3

By data analysis: the final parameters are determined as a fifth group of parameters, and the specific parameters of the fifth group are shown in the following table 4:

TABLE 4

	First welding point	Second welding point	First solder ball
				Preliminary power/%)	0	10	18
Contact power/%)	0	30	20
				Contact pressure/g	100	200	200
Contact time/ms	5	8	5
				Bonding power/%)	35	30	65
Bonding pressure/g	100	100	100
				Bonding time/ms	10	12	20
Released power/%)	0	0	0
				Relief pressure/g	0	35	0
Release time/ms	0	2	0

Therefore, by setting a series of process parameters, the gold wire bonding operation between two planes with height difference is realized through the automatic gold wire bonding machine, so that the time is saved, and the quality is ensured.

In one embodiment, according to the above experimental conditions, the bonding power of the first pad and the second pad may be 25 to 45%, and the bonding pressure may be 80 to 100 g.

In a preferred embodiment, the diameter of the gold wire is 50 μm, and in this case, the bonding power of the first pad is preferably 35%, and the bonding pressure is preferably 100 g; the bonding power of the second welding point is preferably 30%, and the bonding pressure is preferably 100 g.

In one embodiment, after the step 4, the bonding method further includes:

and (4) carrying out physical property inspection and reflector coupling inspection on the bonded gold wires, and judging whether the gold wires are qualified.

In one embodiment, as shown in fig. 3, the electrode is an electrode strip or a tube, preferably of square configuration, the surface of which is provided with a gold plating.

Preferably, as can be seen from fig. 3, the laser chip includes two rows that are parallel to each other, three electrode bars or electrode tubes are respectively a first electrode bar 1, a second electrode bar 2, and a third electrode bar 3, and the electrode bars are connected by bonding with a plurality of gold wires 4. The first electrode strips 1 and the third electrode strips 3 are arranged in parallel with the two rows of laser chips, and the other second electrode strip 2 is arranged at the end part of the semiconductor laser tube shell.

Example 2

Referring to fig. 3, embodiment 2 discloses a semiconductor laser, in which a plurality of laser chips and at least two electrodes are disposed in a package of the semiconductor laser, and the electrodes are connected by using any one of the above bonding methods. Other structures of the semiconductor laser are not described in detail.

The above description is only an embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, extension, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

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Bonding method of gold wire in semiconductor laser tube shell and semiconductor laser

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