阅读说明：本技术 基于ZnO/Al荷壳纳米线的等离激元激光器及其制备方法 (Plasmon laser based on ZnO/Al charge shell nanowire and preparation method thereof ) 是由 徐春祥 王茹 石增良 邱腾 于 2020-11-27 设计创作，主要内容包括：本发明公开了一种基于ZnO/Al荷壳纳米线的等离激元激光器及其制备方法,等离激元激光器包括单根ZnO纳米线、Al壳层膜；制备方法包括如下步骤：在Si衬底上用气相沉积法生长ZnO纳米线阵列；用射频磁控溅射法在ZnO纳米线阵列上溅射Al壳层膜；将ZnO/Al纳米阵列放置在无水乙醇中进行超声,取超声后的溶液滴加在干净的石英片上进行烘干,便形成分散性好的等离激元激光器。本发明通过简单的气相沉积方法和射频磁控溅射方法,优化溅射时间,可在ZnO纳米线阵列上生长不同厚度、表面光滑均一的Al壳层膜,制备的ZnO/Al核壳纳米,在325nm飞秒激光器泵浦下,可以在突破衍射极限的条件下,实现了自发辐射因子达到0.14的良好紫外激光特性。(The invention discloses a plasmon laser based on ZnO/Al charge shell nanowires and a preparation method thereof, wherein the plasmon laser comprises a single ZnO nanowire and an Al shell layer film; the preparation method comprises the following steps: growing a ZnO nanowire array on a Si substrate by using a gas phase deposition method; sputtering an Al shell layer film on the ZnO nanowire array by using a radio frequency magnetron sputtering method; and (3) placing the ZnO/Al nano array in absolute ethyl alcohol for ultrasonic treatment, and dropwise adding the ultrasonic solution on a clean quartz plate for drying to form the plasmon laser with good dispersibility. The invention optimizes the sputtering time by a simple vapor deposition method and a radio frequency magnetron sputtering method, can grow Al shell film films with different thicknesses and smooth and uniform surfaces on the ZnO nanowire array, and the prepared ZnO/Al core-shell nano can realize good ultraviolet laser characteristics with a spontaneous radiation factor reaching 0.14 under the condition of breaking through the diffraction limit under the pump of a 325nm femtosecond laser.)

1. A plasmon laser based on ZnO/Al charge shell nanowires is characterized by comprising a ZnO nanowire array and an Al shell layer film; growing a ZnO nanowire array on a Si substrate by using a vapor deposition method, sputtering an Al shell layer film on the ZnO nanowire array, and forming a plasmon laser by using a single ZnO/Al shell-loaded nanowire.

2. The plasmon laser based on ZnO/Al shell-loaded nanowires of claim 1, wherein the ZnO nanowire array has a radius of 50-100 nm and a length of 1-5 μm.

3. The plasmon laser based on ZnO/Al shell-loaded nanowires of claim 1, wherein the thickness of the Al shell film in the axial direction and at the top of the ZnO nanowire array is 15-50 nm.

4. The plasmon laser based on ZnO/Al shell-loaded nanowires of claim 1, wherein one end of the ZnO/Al shell-loaded nanowires has an Al shell layer film.

5. A preparation method of a plasmon laser based on a ZnO/Al charge shell nanowire is characterized by comprising the following steps:

(1) according to the mass ratio of 1: 1-3: 1, mixing pure ZnO powder and 100-1000-mesh carbon powder, finely grinding, weighing 0.5-0.8 g of mixed powder, and feeding the powder into the bottom of a quartz tube with the length of 30cm and the diameter of 3cm by using a long medicine spoon; putting a Si substrate into the opening end of a quartz tube for 4-7 nm, pushing powder at the bottom of the quartz tube into a reaction area with the highest temperature of a tube furnace, closing the tube furnace, vacuumizing, introducing argon and oxygen serving as carrier gas and reaction gas respectively, and reacting for 20-35 minutes; breaking vacuum, opening the tube furnace, and taking out the ZnO nanowire array;

(2) the ZnO nanowire array is placed into a radio frequency magnetron sputtering instrument, and an Al shell layer film is sputtered;

(3) putting the ZnO/Al charge shell nanowire array into absolute ethyl alcohol, carrying out ultrasonic treatment for 2-3 minutes, and dropwise adding an ultrasonic solution into a clean quartz plate to form dispersed ZnO/Al charge shell nanowires;

(4) and (4) carrying out variable power spectrum measurement on the single ZnO/Al shell-loaded nanowire finally formed in the step (3).

6. The preparation method of the ZnO/Al shell-loaded nanowire-based plasmon laser as claimed in claim 5, wherein in the step (1), the temperature of the high-temperature reaction is 1000-1200 ℃, the flow of argon is 130-180 sccm, and the flow of oxygen is 13-18 sccm.

7. The method for preparing the ZnO/Al shell-loaded nanowire-based plasmon laser according to claim 5, wherein in the step (2), the sputtering target is a 60 x 2mm Al target, the flow of argon gas is 30-50 sccm, the pressure of a cavity during sputtering is 0.5-3 Pa, the sputtering power is 90-140W, and the sputtering time is 10-30 minutes.

8. The method for preparing the plasmon laser based on ZnO/Al shell-loaded nanowire according to claim 5, wherein in the step (4), a femtosecond laser with the wavelength of 325nm is used as a pumping light source.

Technical Field

The invention relates to the technical field of semiconductor photoelectron, in particular to a plasmon laser based on ZnO/Al shell-loaded nanowires and a preparation method thereof.

Background

The plasma laser can break through diffraction, and has potential application in photoelectron and photon integration, even breaking through diffraction limit. Reducing light leakage at physical boundaries is very important for the density of photonic integration. The main approach for improving the laser performance is to effectively limit the optical field within the nanometer scale, to effectively couple the metal SP with the semiconductor exciton, and to significantly reduce the light leakage through the selection of materials and structural design.

The plasma laser generally reported at present is a one-dimensional plasmon laser composed of metal/insulator/semiconductor, and due to leakage of light in the propagation direction and end face, the one-dimensional optical field confinement cannot meet the high-performance requirement of optical integration. Constructing three-dimensional light field constraints becomes a solution.

Because ZnO has a natural micro-cavity structure and higher exciton binding energy, ZnO is often used as an ideal ultraviolet light-emitting semiconductor nano material of a plasma nano laser. The metal Al has stronger resonance absorption in an ultraviolet region. The charge shell nano structure of ZnO and Al does not need an insulating layer, so that the preparation process can be greatly simplified. Therefore, the device can be prepared by adopting a simple radio frequency magnetic sputtering method. Because the metal Al covers one end of the axial direction and the cross section of the ZnO nanowire, the three-dimensional constraint of the optical field can be realized.

Disclosure of Invention

The purpose of the invention is as follows: aiming at the problems, the invention provides a plasmon laser based on a ZnO/Al shell-loaded nanowire and a preparation method thereof.

The technical scheme is as follows: in order to realize the purpose of the invention, the technical scheme adopted by the invention is as follows: a plasmon laser based on ZnO/Al charge shell nanowires comprises a ZnO nanowire array and an Al shell layer film; growing a ZnO nanowire array on a Si substrate by using a vapor deposition method, sputtering an Al shell layer film on the ZnO nanowire array, and forming a plasmon laser by using a single ZnO/Al shell-loaded nanowire.

Furthermore, the radius of the ZnO nanowire array is 50-100 nm, and the length of the ZnO nanowire array is 1-5 mu m.

Furthermore, the thickness of the Al shell layer film at the axial direction and the top of the ZnO nanowire array is 15-50 nm.

Furthermore, one end of the ZnO/Al shell-loaded nanowire is provided with an Al shell layer film.

A preparation method of a plasmon laser based on a ZnO/Al charge shell nanowire comprises the following steps:

(1) according to the mass ratio of 1: 1-3: 1, mixing pure ZnO powder and 100-1000-mesh carbon powder, finely grinding, weighing 0.5-0.8 g of mixed powder, and feeding the powder into the bottom of a quartz tube with the length of 30cm and the diameter of 3cm by using a long medicine spoon; putting a Si substrate into the opening end of a quartz tube for 4-7 nm, pushing powder at the bottom of the quartz tube into a reaction area with the highest temperature of a tube furnace, closing the tube furnace, vacuumizing, introducing argon and oxygen serving as carrier gas and reaction gas respectively, and reacting for 20-35 minutes; breaking vacuum, opening the tube furnace, and taking out the ZnO nanowire array;

(2) the ZnO nanowire array is placed into a radio frequency magnetron sputtering instrument, and an Al shell layer film is sputtered;

(3) putting the ZnO/Al charge shell nanowire array into absolute ethyl alcohol, carrying out ultrasonic treatment for 2-3 minutes, and dropwise adding an ultrasonic solution into a clean quartz plate to form dispersed ZnO/Al charge shell nanowires;

(4) and (4) carrying out variable power spectrum measurement on the single ZnO/Al shell-loaded nanowire finally formed in the step (3).

Further, in the step (1), the temperature of the high-temperature reaction is 1000-1200 ℃, the flow of argon is 130-180 sccm, and the flow of oxygen is 13-18 sccm.

Further, in the step (2), the sputtering target is an Al target of 60 × 2mm, the flow of argon gas is 30-50 sccm, the pressure of the cavity during sputtering is 0.5-3 Pa, the sputtering power is 90-140W, and the sputtering time is 10-30 minutes.

Further, a femtosecond laser of 325nm was used as a pumping light source.

Has the advantages that: on the basis of the traditional ZnO photon laser, a layer of Al shell film is sputtered on the axial direction and the top of the ZnO nanowire, so that optical mode three-dimensional constraint is formed, and light leakage on the physical boundary of the device is reduced; the ZnO/Al core-shell plasmon laser prepared by the invention has high-performance ultraviolet laser output and a spontaneous radiation factor of 0.14 under the femtosecond laser pump of 325 nm.

Drawings

FIG. 1 is a schematic diagram of a transmission electron microscope of ZnO/Al shell-loaded nanowires;

FIG. 2 is a schematic diagram of the synthesis of ZnO/Al shell-loaded nanowires;

FIG. 3 is a schematic graph of the spectra and threshold curves of ZnO/Al shell-loaded nanowires in example 1; wherein, 3a is a spectrum curve diagram, and 3b is a threshold curve diagram.

Detailed Description

The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.

As shown in fig. 1, the plasmon laser based on ZnO/Al shell-loaded nanowires of the present invention includes a ZnO nanowire array and an Al shell layer film; firstly growing a ZnO nanowire array on a Si substrate, secondly sputtering an Al shell layer film on the ZnO nanowire array, and finally forming an ultraviolet light detection device, namely a plasmon laser, by using a single ZnO/Al shell-loaded nanowire.

The ZnO nanowire array has a radius of 50-100 nm and a length of 1-5 μm. The thicknesses of the Al shell films at the axial direction and the top of the ZnO nanowire are 15-50 nm.

One end of the ZnO/Al shell-loaded nanowire is provided with an Al shell layer film.

As shown in fig. 2, the preparation method of the plasmon laser based on the ZnO/Al shell-loaded nanowire of the present invention comprises the following steps:

(1) according to the mass ratio of 1: 1-3: 1, mixing pure ZnO powder and 100-1000-mesh carbon powder, finely grinding, weighing 0.5-0.8 g of mixed powder, and then feeding the powder into the bottom of a quartz tube with the length of 30cm and the diameter of 3cm by using a long medicine spoon; putting a Si substrate into the opening end of a quartz tube for 4-7 nm, pushing powder at the bottom of the quartz tube into a reaction area with the highest temperature of a tube furnace, closing the tube furnace, vacuumizing, introducing argon and oxygen serving as carrier gas and reaction gas respectively, and reacting for 20-35 minutes; breaking vacuum, opening the tube furnace, and taking out the ZnO nanowire array;

the high-temperature reaction temperature is 1000-1200 ℃, the argon flow is 130-180 sccm, and the oxygen flow is 13-18 sccm.

(2) The ZnO nanowire array is placed into a radio frequency magnetron sputtering instrument, and an Al shell layer film is sputtered to form a ZnO/Al shell-loaded nanowire array;

the sputtering target is an Al target with the thickness of 60 multiplied by 2mm, the flow of argon is 30-50 sccm, the air pressure of a cavity during sputtering is 0.5-3 Pa, the sputtering power is 90-140W, and the sputtering time is 10-30 minutes.

(3) Putting the ZnO/Al charge shell nanowire array into absolute ethyl alcohol, carrying out ultrasonic treatment for 2-3 minutes, and dropwise adding an ultrasonic solution into a clean quartz plate to form dispersed ZnO/Al charge shell nanowires, so that the test is facilitated;

(4) and (4) carrying out variable power spectrum measurement on the single ZnO/Al shell-loaded nanowire finally formed in the step (3), wherein a 325nm femtosecond laser is used as a pumping light source.

Example 1

The preparation method of the plasmon laser based on the ZnO/Al charge shell nanowire comprises the following steps:

the first step is as follows: according to the mass ratio of 1: 1, mixing pure ZnO powder and 100-1000-mesh carbon powder, finely grinding, weighing 0.7g of mixed powder, and feeding the powder into the bottom of a quartz tube with the length of 30cm and the diameter of 3cm by using a long medicine spoon;

putting a Si substrate into the opening end of a quartz tube, measuring the opening end of the quartz tube by 7nm, pushing powder at the bottom of the quartz tube into a reaction area with the highest temperature of a tubular furnace, wherein the temperature of the high-temperature reaction is 1050 ℃, closing the tubular furnace, vacuumizing, introducing argon and oxygen respectively serving as carrier gas and reaction gas, introducing 150sccm of argon flow and 15sccm of oxygen flow, reacting for 20 minutes, breaking the vacuum, starting the tubular furnace, and taking out the ZnO nanowire array;

the second step is that: the ZnO nanowire array is placed into a radio frequency magnetron sputtering instrument, and an Al shell layer film is sputtered; the sputtering target is an Al target with the thickness of 60 multiplied by 2mm, the argon flow is 50sccm, the cavity air pressure during sputtering is 2Pa, the sputtering power is 110W, and the sputtering time is 10 minutes. The thickness of the synthesized Al shell film is about 15 nm.

The third step: and putting the ZnO/Al lotus shell nanowire array into absolute ethyl alcohol, performing ultrasonic treatment for 3 minutes, and dropwise adding an ultrasonic solution into a clean quartz plate to form dispersed ZnO/Al lotus shell nanowires.

The fourth step: and (3) carrying out variable power spectral measurement on the single ZnO/Al shell-loaded nanowire (with the radius of 100nm) formed at the end of the third step, wherein 3a is a spectral curve diagram, and 3b is a threshold curve diagram. Under the pumping of 325nm femtosecond laser, the ZnO/Al shell-loaded nanowire has good ultraviolet laser characteristics, and a threshold curve graph is fitted to find that the spontaneous radiation factor reaches 0.14.

Example 2

The preparation method of the plasmon laser based on the ZnO/Al charge shell nanowire comprises the following steps:

the first step is as follows: according to the mass ratio of 1: 1, mixing pure ZnO powder and 100-1000-mesh carbon powder, finely grinding, weighing 0.7g of mixed powder, and feeding the powder into the bottom of a quartz tube with the length of 30cm and the diameter of 3cm by using a long medicine spoon;

putting a Si substrate into the opening end of a quartz tube, measuring the opening end of the quartz tube by 7nm, pushing powder at the bottom of the quartz tube into a reaction area with the highest temperature of a tubular furnace, wherein the temperature of the high-temperature reaction is 1050 ℃, closing the tubular furnace, vacuumizing, introducing argon and oxygen respectively serving as carrier gas and reaction gas, introducing 150sccm of argon flow and 15sccm of oxygen flow, reacting for 20 minutes, breaking the vacuum, starting the tubular furnace, and taking out the ZnO nanowire array;

the second step is that: and (3) putting the ZnO nanowire array into a radio frequency magnetron sputtering instrument, and sputtering a layer of Al shell layer film, wherein the sputtering target is an Al target with the thickness of 60 multiplied by 2mm, the flow of argon is 50sccm, the pressure of a cavity during sputtering is 2Pa, the sputtering power is 110W, and the sputtering time is 20 minutes. The thickness of the synthesized Al shell film is about 30 nm.

The third step: and putting the ZnO/Al lotus shell nanowire array into absolute ethyl alcohol, performing ultrasonic treatment for 3 minutes, and dropwise adding an ultrasonic solution into a clean quartz plate to form dispersed ZnO/Al lotus shell nanowires.

The fourth step: and (4) carrying out variable power spectrum measurement on the single ZnO/Al shell-loaded nanowire finally formed in the third step.

Example 3

The preparation method of the plasmon laser based on the ZnO/Al charge shell nanowire comprises the following steps:

the first step is as follows: according to the mass ratio of 1: 1, mixing pure ZnO powder and 100-1000-mesh carbon powder, finely grinding, weighing 0.7g of mixed powder, and feeding the powder into the bottom of a quartz tube with the length of 30cm and the diameter of 3cm by using a long medicine spoon; putting a Si substrate into the opening end of a quartz tube, measuring the opening end of the quartz tube by 7nm, pushing powder at the bottom of the quartz tube into a reaction area with the highest temperature of a tubular furnace, wherein the temperature of the high-temperature reaction is 1050 ℃, closing the tubular furnace, vacuumizing, introducing argon and oxygen respectively serving as carrier gas and reaction gas, introducing 150sccm of argon flow and 15sccm of oxygen flow, reacting for 20 minutes, breaking the vacuum, starting the tubular furnace, and taking out the ZnO nanowire array;

the second step is that: and (3) putting the ZnO nanowire array into a radio frequency magnetron sputtering instrument, and sputtering a layer of Al shell layer film, wherein the sputtering target is an Al target with the thickness of 60 multiplied by 2mm, the flow of argon is 50sccm, the pressure of a cavity during sputtering is 2Pa, the sputtering power is 110W, and the sputtering time is 30 minutes. The thickness of the synthesized Al shell film is about 50 nm.

The third step: and putting the ZnO/Al lotus shell nanowire array into absolute ethyl alcohol, performing ultrasonic treatment for 3 minutes, and dropwise adding an ultrasonic solution into a clean quartz plate to form dispersed ZnO/Al lotus shell nanowires.

The fourth step: and (4) carrying out variable power spectrum measurement on the single ZnO/Al shell-loaded nanowire finally formed in the third step.