Optical frequency comb device and manufacturing method thereof
阅读说明:本技术 光频梳器件和光频梳器件的制作方法 (Optical frequency comb device and manufacturing method thereof ) 是由 孙朝阳 朱振东 王雪深 刘唱 白本锋 屈继峰 于 2020-06-22 设计创作,主要内容包括:本发明涉及一种光频梳器件和光频梳器件的制作方法,所述介质层设置于所述衬底层的表面。所述光频梳层设置于所述介质层远离所述衬底的表面。所述介质层与所述光频梳层接触的表面设置有应力释放单元。所述应力释放单元包括V形结构。所述V形结构较大程度上阻挡了应力产生的方向和路径,从所述氮化硅薄膜传递到所述介质层表面的应力会被所述V形结构阻挡,从而可以避免所述介质层和所述氮化硅薄膜开裂,进而可以提高产品良率。(The invention relates to an optical frequency comb device and a manufacturing method thereof. The optical frequency comb layer is arranged on the surface, far away from the substrate, of the dielectric layer. And a stress release unit is arranged on the surface of the dielectric layer, which is in contact with the optical frequency comb layer. The stress relief unit includes a V-shaped structure. The V-shaped structure blocks the direction and the path of stress generation to a greater extent, and the stress transmitted from the silicon nitride film to the surface of the dielectric layer can be blocked by the V-shaped structure, so that the dielectric layer and the silicon nitride film can be prevented from cracking, and the product yield can be improved.)
1. An optical-frequency comb device, comprising:
a substrate (110);
a dielectric layer (120) disposed on a surface of the substrate (110) layer;
the optical frequency comb layer (130) is arranged on the surface, far away from the substrate (110), of the dielectric layer (120), a stress release unit (230) is arranged on the surface, in contact with the optical frequency comb layer (130), of the dielectric layer (120), and the stress release unit (230) comprises a V-shaped structure (232).
2. The optical-frequency comb device according to claim 1, wherein the V-shaped structure (232) comprises two first linear regions (234) having coincident vertices (236), the two first linear regions (234) forming a set angle therebetween, and the stress relief unit (230) further comprises a first cross-shaped structure (238), the first cross-shaped structure (238) being disposed between the two first linear regions (234).
3. The optical-frequency comb device according to claim 2, comprising two first cross structures (238), wherein the stress relief unit (230) further comprises a second linear region (240), wherein the second linear region (240) is located between the two first linear regions (234), and wherein the two first cross structures (238) are respectively located on both sides of the second linear region (240) and between the two first linear regions (234).
4. The optical frequency comb device according to claim 3, wherein an extension direction of the second straight line region (240) coincides with the apex (236).
5. The optical-frequency comb device according to claim 3, wherein the first linear region (234) and the second linear region (240) have the same width, and the length of the second linear region (240) is 1.2 times to 1.5 times the length of the first linear region (234).
6. The optical-frequency comb device according to any one of claims 1 to 5, wherein a surface of the dielectric layer (120) in contact with the optical-frequency comb layer (130) is provided with a stress relief region (200), and the stress relief region (200) is provided with a plurality of the stress relief units (230).
7. The optical-frequency comb device according to claim 6, wherein a mark region (250) is provided between the plurality of stress relief units (230) at a surface of the dielectric layer (120) in contact with the optical-frequency comb layer (130).
8. The optical-frequency comb device according to claim 7, wherein the mark region (250) is provided with a second cross structure (252).
9. The optical-frequency comb device of claim 8, wherein the labeling area (250) further comprises a third cross-structure (254), the second cross-structure (252) dividing the labeling area (250) into four quadrants, the third cross-structure (254) being located in one of the quadrants.
10. The optical-frequency comb device according to claim 6, further comprising a plurality of frequency-sparse regions (260), wherein the stress relief regions (200) are disposed in plurality, and wherein the frequency-sparse regions (260) are disposed between the plurality of stress relief regions (200).
11. The optical-frequency comb device according to claim 10, wherein the stress relief region (200) comprises:
a plurality of first stress relief regions (212) spaced apart to form a plurality of first stress relief region rows (210), a waveguide region (220) being formed between two adjacent first stress relief region rows (210);
a plurality of second stress relief regions (214), one second stress relief region (214) disposed between two adjacent first stress relief regions (212) in the first stress relief region row (210); the second stress relief region (214), the two adjacent first stress relief regions (212) and the waveguide region (220) form the frequency sparse region (260).
12. A method for manufacturing an optical frequency comb device is characterized by comprising the following steps:
providing a substrate (110);
forming a dielectric layer (120) on the surface of the substrate (110), wherein a stress release unit (230) is arranged on the surface of the dielectric layer (120) far away from the surface of the substrate (110), and the stress release unit (230) comprises a V-shaped structure (232);
An optical frequency comb layer (130) is formed on a surface of the dielectric layer (120) remote from the substrate (110).
Technical Field
The invention relates to the technical field of chips, in particular to an optical frequency comb device and a manufacturing method of the optical frequency comb device.
Background
Optoelectronic chips are the national core competitiveness and backbone industry. The capacity of the photonic integrated manufacturing industry in China is insufficient, and the photonic integrated manufacturing industry is not only backward of high-end manufacturing equipment of large-scale integrated circuits, but also has the difference of advanced integration processes, growth of key thin film materials and microlithography. These technical barriers make the overall performance of optoelectronic chips in our country restricted by developed countries.
An on-chip Kerr optical frequency comb, named Kerr optical comb for short, is a wideband optical frequency comb which converts pump light with a certain single frequency into a pulse sequence containing a large number of equally spaced frequencies and outputting an ultrashort soliton pulse sequence in a time domain by utilizing the nonlinear optical Kerr effect in a novel optical micro-ring resonant cavity. Technically, the on-chip optical frequency comb is based on an advanced optical thin film which is grown, and an advanced semiconductor process is adopted. Therefore, the Kerr optical comb can realize the outstanding advantages of on-chip integration, high pulse repetition frequency, good coherence, high single comb tooth power and the like, and is a subversive technology. The on-chip optical frequency comb has extremely high time frequency precision, can redefine a basic physical constant 'second', can construct monochromatic laser, can construct a clock and frequency chain with the highest precision, can improve a global positioning system and the like. By utilizing the on-chip optical frequency comb chip, people are expected to know the substance world and the ultrahigh sensitive chemical detection at the single molecule and single atom level, and can be widely applied to public safety, biomedical detection and identification of bacteria and viruses and the like. By using the on-chip optical frequency comb chip, people can synthesize a super laser, which is expected to realize coherent control and laser with specific waveform on the electromagnetic spectrum from radio waves to X rays, and improve the sensitivity and detection range of the radar by several orders of magnitude. The method has great strategic significance in the fields of basic science of forewords, national defense safety and the like. The NASA, DARPA, NIST, Germany, Sweden and the like in the United states invest billions of dollars to develop on-chip optical frequency combs from the beginning of the 21 st century by virtue of the technical advantages of semiconductor processes, and form better technical accumulation. The research on the on-chip optical frequency comb in China starts late, the process technology is backward, and large equipment is short, so that the research on the on-chip optical frequency comb integration is urgent.
However, stress is easily generated in the manufacturing process of the conventional on-chip optical frequency comb device, so that the stability of the on-chip optical frequency comb device is affected.
Disclosure of Invention
In view of the above, it is necessary to provide an optical frequency comb device and a method for manufacturing the optical frequency comb device.
An optical-frequency comb device, comprising:
a substrate;
the dielectric layer is arranged on the surface of the substrate layer;
the optical frequency comb layer is arranged on the surface, far away from the substrate, of the dielectric layer, a stress release unit is arranged on the surface, in contact with the optical frequency comb layer, of the dielectric layer, and the stress release unit comprises a V-shaped structure.
In one embodiment, the V-shaped structure includes two first linear regions with coincident vertexes, and a set angle is formed between the two first linear regions, and the stress release unit further includes a first cross-shaped structure disposed between the two first linear regions.
In one embodiment, the stress relief unit further comprises a second linear area located between the two first linear areas, and the two first cross structures are respectively located on two sides of the second linear area and located between the two first linear areas.
In one embodiment, the elongation direction of the second rectilinear area coincides with the vertex.
In one embodiment, the first and second linear regions have the same width, and the length of the second linear region is 1.2 to 1.5 times the length of the first linear region.
In one embodiment, the surface of the dielectric layer, which is in contact with the optical frequency comb layer, is provided with a stress relief region, and the stress relief region is provided with a plurality of stress release units.
In one embodiment, a mark region is arranged between the stress release units on the surface of the medium layer, which is in contact with the optical frequency comb layer.
In one embodiment, the marker region is provided with a second cross-structure.
In one embodiment, the marking area further comprises a third cross structure, the third cross structure dividing the marking area into four quadrants, the third cross structure being located in one of the quadrants.
In one embodiment, the stress relieving device further comprises a plurality of sparse regions, and the sparse regions are arranged among the stress relieving regions.
In one embodiment, the stress relief region comprises:
The first stress eliminating areas are arranged at intervals to form a plurality of first stress eliminating area rows, and a waveguide area is formed between every two adjacent first stress eliminating area rows;
a plurality of second stress relief regions, one of the second stress relief regions being disposed between two adjacent first stress relief regions in the row of first stress relief regions; the frequency sparse region is formed among the second stress relieving region, the two adjacent first stress relieving regions and the waveguide region.
A method for manufacturing an optical frequency comb device comprises the following steps:
providing a substrate;
forming a dielectric layer on the surface of the substrate, wherein a stress release unit is arranged on the surface of the dielectric layer, which is far away from the substrate, and the stress release unit comprises a V-shaped structure;
and forming an optical frequency comb layer on the surface of the dielectric layer far away from the substrate.
According to the optical frequency comb device and the manufacturing method of the optical frequency comb device, the dielectric layer is arranged on the surface of the substrate layer. The optical frequency comb layer is arranged on the surface, far away from the substrate, of the dielectric layer. And a stress release unit is arranged on the surface of the dielectric layer, which is in contact with the optical frequency comb layer. The stress relief unit includes a V-shaped structure. The V-shaped structure blocks the direction and the path of stress generation to a greater extent, and the stress transmitted from the silicon nitride film to the surface of the dielectric layer can be blocked by the V-shaped structure, so that the dielectric layer and the silicon nitride film can be prevented from cracking, and the product yield can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of an optical frequency comb device provided in an embodiment of the present application;
FIG. 2 is a schematic diagram of a surface pattern of a dielectric layer according to an embodiment of the present disclosure;
fig. 3 is a mirror image of an optical frequency comb disposed in a waveguide region on a surface of a dielectric layer according to an embodiment of the present disclosure;
FIG. 4 is a schematic view of a V-shaped structure provided in an embodiment of the present application;
FIG. 5 is a schematic cross-sectional view of an optical-frequency comb device according to another embodiment of the present application
FIG. 6 is a schematic view of a stress relief unit according to an embodiment of the present disclosure;
FIG. 7 is a crack mirror image of an optical frequency comb device according to an embodiment of the present disclosure;
FIG. 8 is a schematic diagram of a marking area provided in an embodiment of the present application;
fig. 9 is a flow chart of a manufacturing process of an optical frequency comb device according to an embodiment of the present application.
Description of reference numerals:
Optical frequency comb device 10
Groove 122
Optical
Optical frequency comb 132
First stress
First
Second
V-shaped
First linear region 234
Vertex 236
First cross structure 238
Second straight section 240
Marking
A second cross-shaped structure 252
Thirty-first structure 254
Frequency
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Referring to fig. 1-4, embodiments of the present application provide an optical frequency comb device 10. The optical-frequency comb device 10 includes a
The
The
In one embodiment, the optical
The
In one embodiment, the
Since the closer the stoichiometric ratio of the silicon nitride film is to 3: 4, the greater the stress. The greater the thickness of the thin silicon nitride film, the greater the stress. And the thicker the
The
The optical frequency comb device 10 provided by the embodiment of the application. The
Referring to fig. 5, in one embodiment, the
The end where the two first linear regions 234 intersect may be the vertex 236. The set angle can be set as required. In one embodiment, the set angle may be 30 ° to 180 °. In one embodiment, the set angle may be 60 ° to 145 °. In one embodiment, the set angle may be 70 ° to 120 °. In one embodiment, the set angle may be 80 ° to 110 °. Further, the set angle may be 90 °. It will be appreciated that when the set angle is 90, the apex 236 will form a rounded chamfer during the photolithography process, thereby making it easier to relieve stress.
The set angle determines the extending direction of the first linear region 234, and thus the direction in which the first linear region 234 blocks stress conduction can be determined. The plane of the first cross-shaped structure 238 may be parallel to the plane of the V-shaped
In one embodiment, the optical-frequency comb device 10 further includes two of the first cross structures 238. The
Referring to fig. 7, when the optical frequency comb device 10 cracks due to stress, the first cross structure 238 and the second straight line region 240 may function to guide stress dissipation. The two first linear regions 234 may form a triangular structure, and the two first linear regions 234 and the second linear region 240 may form a triangular structure respectively. The triangular structure has a stable characteristic, and thus the stability of the structure of the optical frequency comb device 10 can be increased.
The second linear region 240 divides the area enclosed by the V-shaped
In one embodiment, the elongation direction of the second linear region 240 coincides with the vertex 236. I.e. the second rectilinear area 240 may be located on the bisector of the angle of the V-shaped
In one embodiment, the first linear region 234 and the second linear region 240 have the same width. The length of the second linear region 240 is 1.2 to 1.5 times the length of the first linear region 234. Thus, the second linear region 240 is longer than the first linear region 234, i.e., the second linear region 240 may protrude a certain distance from the opening of the V-shaped
In one embodiment, the centerline of the second linear region 240 is 10 microns from the center of the first cross-shaped structure 238. In one embodiment, the first cross-shaped structure 238 is formed of two rectangles of the same shape. The length and width of the rectangle may be 20 microns and 5 microns respectively.
In one embodiment, the surface of the
In one embodiment, a
Referring to fig. 8, in one embodiment, the
In one embodiment, the
In one embodiment, the optical-frequency comb device 10 further includes a frequency-
In one embodiment, the
The second
In one embodiment, the
In one embodiment, the second
The first
In one embodiment, one of the first
In one embodiment, the
The embodiment of the application also provides a manufacturing method of the optical frequency comb device 10. The method comprises the following steps:
s10, providing a
s20, forming a
and S30, forming an optical
In S20, the
In one embodiment, a photolithography plate is used to perform the uv lithography exposure, development, and fixing processes. It is understood that the shape and pattern structure of the reticle correspond to the structure for releasing stress formed on the surface of the
And after exposure and development are carried out through the photoetching plate, the
After the
And then, growing a silicon nitride film on the surface of the
After the optical frequency comb device 10 is manufactured, laser alignment measurement can be performed to verify the stress and the working stability of the optical frequency comb device 10.
Referring to fig. 9, in an embodiment, the method for manufacturing the optical frequency comb device 10 further includes the following steps:
a, forming a
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
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