阅读说明：本技术 高功率半导体激光器 (High power semiconductor laser ) 是由 刘佳敏 蔡万绍 孙帅 于 2020-06-08 设计创作，主要内容包括：本发明公开了一种高功率半导体激光器,包括激光源、第一光学装置以及合束装置,激光源包括多个激光线阵,每一个激光线阵上设置有多个发光点；第一光学装置将激光源发出的激光束在快轴方向准直,以使得每一个激光线阵发出的多个激光束组合形成一个片状的第一激光面；合束装置将第一光学装置射出的多个第一激光面叠加形成一个片状的叠加激光面。多个激光线阵发出的激光通过合束装置叠加,可以输出高功率的激光,可以用于激光加工、激光雕刻等。叠加激光面的光强度随加工件远近距离的变化很小,可以对异形面进行加工,而且可以远距离加工。(The invention discloses a high-power semiconductor laser, which comprises a laser source, a first optical device and a beam combining device, wherein the laser source comprises a plurality of laser linear arrays, and each laser linear array is provided with a plurality of light-emitting points; the first optical device collimates the laser beams emitted by the laser source in the fast axis direction, so that a plurality of laser beams emitted by each laser linear array are combined to form a sheet-shaped first laser surface; the beam combining device superposes a plurality of first laser planes emitted by the first optical device to form a sheet-shaped superposed laser plane. The laser emitted by the plurality of laser linear arrays is superposed through the beam combining device, so that high-power laser can be output, and the laser can be used for laser processing, laser engraving and the like. The light intensity of the superposed laser surface is very small along with the change of the distance between the superposed workpiece and the superposed laser surface, and the superposed laser surface can be used for processing a special-shaped surface and can be processed remotely.)

1. A high power semiconductor laser, comprising:

the laser source comprises a plurality of laser lines arranged in a first direction, wherein each laser line is provided with a plurality of light-emitting points arranged in a second direction, each light-emitting point is used for emitting a laser beam, the second direction is perpendicular to the first direction, in addition, the fast axis direction of each laser beam is consistent with the first direction, and the slow axis direction of each laser beam is consistent with the second direction;

the first optical device is arranged on the light emitting side of the laser source and is used for collimating each laser beam emitted by the laser source in the fast axis direction so that a plurality of laser beams emitted by each laser linear array are combined to form a sheet-shaped first laser surface;

and the beam combining device is arranged on the light emergent side of the first optical device and is used for superposing the plurality of first laser planes emitted by the first optical device to form a flaky superposed laser plane.

2. The high power semiconductor laser of claim 1,

the wavelengths of the laser beams emitted by each laser linear array are the same, and the wavelengths of the laser beams emitted by the laser linear arrays are decreased progressively or increased progressively in the first direction;

the beam combining device comprises a plurality of optical elements, the optical elements are arranged on the light emergent side of the first optical device and correspond to the first laser planes one by one;

each of the optical elements is configured to reflect the first laser plane to which it corresponds and transmit the other first laser planes when other first laser planes having a longer wavelength are present, or,

each optical element is used for reflecting the first laser plane corresponding to the optical element and transmitting other first laser planes when other first laser planes with smaller wavelengths exist.

3. The high power semiconductor laser as claimed in claim 2 wherein in the opposite direction of the combined beam device light, the optical element at the end is a mirror and the remaining optical elements are gratings, the gratings having spectral characteristics that reflect and transmit in a predetermined wavelength band.

4. The high power semiconductor laser of claim 3, wherein the grating has a beam transmittance and a reflectivity of 90% or greater.

5. The high power semiconductor laser of claim 2, further comprising:

the plurality of volume Bragg gratings are arranged between the first optical device and the beam combining device, correspond to the plurality of first laser planes one by one, and are used for locking the wavelength of the corresponding first laser planes to form a second laser plane;

the beam combining device is used for superposing a plurality of second laser planes emitted by the volume Bragg gratings to form a sheet-shaped superposed laser plane.

6. The high power semiconductor laser as claimed in claim 2, wherein each optical element is at an angle of 45 degrees ± 10 degrees with respect to its corresponding first lasing facet.

7. The high power semiconductor laser of claim 6, wherein the included angles are all 45 degrees.

8. The high power semiconductor laser according to claim 1, wherein the first optical device comprises a plurality of fast axis collimating lenses, the plurality of fast axis collimating lenses are disposed on light emitting sides of the plurality of laser bars and correspond to the plurality of laser bars one to one, and each fast axis collimating lens is configured to collimate the plurality of laser beams emitted by the corresponding laser bar in a fast axis direction, so that the plurality of laser beams emitted by each laser bar are combined to form a sheet-shaped first laser surface.

9. The high power semiconductor laser of claim 1, further comprising:

and the second optical device is arranged between the first optical device and the beam combining device and is used for changing the divergence angle of each laser beam in each first laser plane emitted by the first optical device in the slow axis direction.

10. The high power semiconductor laser of claim 1, further comprising:

and the third optical device is arranged on the light-emitting side of the beam combining device and is used for converging the superposed laser planes emitted by the beam combining device in the fast axis direction.

Technical Field

The invention relates to the technical field of optical systems, in particular to a high-power semiconductor laser.

Background

Laser machining has a number of significant advantages over conventional machining methods. When the laser is used for processing a workpiece, the laser does not need to be in contact with the workpiece, no cutter is abraded, the processing speed is high, the heat influence on the workpiece is small, the processing mode is flexible, various materials can be processed, and the processing quality is good. Therefore, the laser processing technique is called "common processing means in future manufacturing industry".

In recent years, high-power semiconductor lasers have been developed rapidly, and their applications have been matured in soldering, surface treatment, and the like. At present, laser emitted by a high-power semiconductor laser is irradiated to the surface of a workpiece and then is a focusing point or a focusing line, which is influenced by focal depth, and the processing of a zigzag special-shaped surface (the distance between a front processing position and a rear processing position on the zigzag special-shaped surface relative to the high-power semiconductor laser is different) of the workpiece cannot be realized in the aspect of laser processing.

Disclosure of Invention

The invention mainly solves the technical problem of providing a high-power semiconductor laser, wherein laser emitted by the high-power semiconductor laser irradiates the surface of a workpiece to form non-focusing line light spots, so that a zigzag irregular surface can be machined.

In order to solve the technical problems, the invention adopts a technical scheme that: provided is a high power semiconductor laser including:

the laser source comprises a plurality of laser lines arranged in a first direction, wherein each laser line is provided with a plurality of light-emitting points arranged in a second direction, each light-emitting point is used for emitting a laser beam, the second direction is perpendicular to the first direction, in addition, the fast axis direction of each laser beam is consistent with the first direction, and the slow axis direction of each laser beam is consistent with the second direction;

the first optical device is arranged on the light emitting side of the laser source and is used for collimating each laser beam emitted by the laser source in the fast axis direction so that a plurality of laser beams emitted by each laser linear array are combined to form a sheet-shaped first laser surface;

and the beam combining device is arranged on the light emergent side of the first optical device and is used for superposing the plurality of first laser planes emitted by the first optical device to form a flaky superposed laser plane.

Further, the wavelengths of the laser beams emitted by each laser line array are the same, and the wavelengths of the laser beams emitted by the laser line arrays are decreased or increased progressively in the first direction;

the beam combining device comprises a plurality of optical elements, the optical elements are arranged on the light emergent side of the first optical device and correspond to the first laser planes one by one;

each of the optical elements is configured to reflect the first laser plane to which it corresponds and transmit the other first laser planes when other first laser planes having a longer wavelength are present, or,

each optical element is used for reflecting the first laser plane corresponding to the optical element and transmitting other first laser planes when other first laser planes with smaller wavelengths exist.

Further, in the opposite direction of the light emitted from the beam combining device, the optical element at the tail end is a reflector, and the rest of the optical elements are gratings, and the gratings have spectral characteristics of reflection and transmission in a predetermined waveband.

Furthermore, the light beam transmittance and the reflectivity of the grating are both greater than or equal to 90%.

Further, still include:

the plurality of volume Bragg gratings are arranged between the first optical device and the beam combining device, correspond to the plurality of first laser planes one by one, and are used for locking the wavelength of the corresponding first laser planes to form a second laser plane;

the beam combining device is used for superposing a plurality of second laser planes emitted by the volume Bragg gratings to form a sheet-shaped superposed laser plane.

Furthermore, the included angle between each optical element and the corresponding first laser surface is 45 degrees +/-10 degrees.

Furthermore, the included angle between each optical element and the corresponding first laser surface is 45 degrees.

Further, the first optical device includes a plurality of fast axis collimating lenses, the plurality of fast axis collimating lenses are disposed on light-emitting sides of the plurality of laser linear arrays and are in one-to-one correspondence with the plurality of laser linear arrays, and each fast axis collimating lens is configured to collimate the plurality of laser beams emitted by the corresponding laser linear array in a fast axis direction, so that the plurality of laser beams emitted by each laser linear array form a sheet-shaped first laser surface.

Further, still include:

and the second optical device is arranged between the first optical device and the beam combining device and is used for changing the divergence angle of each laser beam in each first laser plane emitted by the first optical device in the slow axis direction.

Further, still include:

and the third optical device is arranged on the light-emitting side of the beam combining device and is used for converging the superposed laser planes emitted by the beam combining device in the fast axis direction.

The invention has the beneficial effects that:

different from the situation of the prior art, the laser processing device is provided with a plurality of laser linear arrays, a plurality of laser beams emitted by each laser linear array are combined to form a sheet-shaped first laser surface after being collimated by a first optical device, a beam combining device superposes the plurality of first laser surfaces emitted by the first optical device to form a sheet-shaped superposed laser surface, the superposed laser surface is emitted to a surface to be processed to form a non-focal line light spot, the light intensity of the superposed laser surface is very small along with the change of the distance between a workpiece and a workpiece, a special-shaped surface can be processed, and the laser processing device can process the special-shaped surface in a long distance.

The laser emitted by the plurality of laser linear arrays is superposed through the beam combining device, and the laser with high power can be output, and the power can reach kilowatt. Different from a common laser marking line, the superimposed laser surface power emitted by the high-power semiconductor laser is extremely high, and the laser marking line can be used for laser processing, laser engraving and the like. The intensity of the superimposed laser plane (the sharpness of the laser blade) can be adjusted by the voltage applied by the laser linear array, and the higher the power is, the stronger the intensity of the superimposed laser plane (the sharper the laser blade is).

The first optical device is used for collimating the fast axes of a plurality of laser beams emitted by each laser linear array, and the slow axes are not required to be collimated, so that light spots are not required to be shaped.

The plurality of laser linear arrays are arranged in the first direction, the plurality of laser beams emitted by each laser linear array are arranged in the second direction, and the second direction is perpendicular to the first direction, so that the laser source is compact in structure.

In addition, the central wavelengths of the lasers emitted by the laser linear arrays are different, and after the lasers are superposed by the beam combining device, the superposed lasers (superposed laser planes) are mixed-frequency light and do not need to pass through other dispersive optical elements. This reduces the number of optical components, making the optical path simpler.

Drawings

Fig. 1 is a schematic structural diagram of a high-power semiconductor laser according to an embodiment of the present disclosure;

fig. 2 is a top plan view of the high power semiconductor laser of fig. 1;

fig. 3 is a schematic structural diagram of a high-power semiconductor laser according to a second embodiment of the present application;

fig. 4 is a schematic structural diagram of a high-power semiconductor laser provided in the third embodiment of the present application;

fig. 5 is a top plan view of the high power semiconductor laser of fig. 4;

fig. 6 is a schematic structural diagram of a high-power semiconductor laser according to a fourth embodiment of the present application.

Detailed Description

The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples and not all examples of the present application, and all other examples obtained by a person of ordinary skill in the art without any inventive step are within the scope of the present application.

The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present application and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

Figure 1 is a schematic structural diagram of a high power semiconductor laser according to an embodiment of the present application,

fig. 2 is a top view of the high power semiconductor laser of fig. 1.

As shown in fig. 1 and fig. 2, a high power semiconductor laser 1000 according to an embodiment of the present disclosure includes a laser source 100, a first optical device 200, and a beam combiner 300.

The laser source 100 includes a laser bars (bars) 101-1 … 101-a arranged in the X direction, a being an integer greater than 1. B light-emitting points 102-1 … 102-B which are arranged in the Z direction are arranged on each laser linear array 101-1 … 101-A, and B is an integer larger than 1. Each light emitting point 102-1 … 102-B is used for emitting a laser beam L₀. The X direction is perpendicular to the Z direction.

In this embodiment, the B light emitting points 102-1 … 102-B in each laser linear array 101-1 … 101-a are arranged at equal intervals in the Z direction, and may also be arranged at unequal intervals in other embodiments, which is not limited in this application. The B light emitting points 102-1 … 102-B in each laser linear array 101-1 … 101-a are located in the same plane in the Y direction, the Y direction is perpendicular to the X direction and the Z direction, and may not be located in the same plane in other embodiments, which is not limited in this application. The a laser bars 101-1 … 101-a in the laser source 100 are stacked in the X direction, so that the structure of the laser source 100 is more compact, and in other embodiments, the a laser bars 101-1 … 101-a in the laser source 100 may also be arranged at intervals, which is not limited in this application.

In addition, each laser beam L₀Is aligned with the X-direction, each laser beam L₀Is aligned with the Z-direction so as to subsequently form a sheet-like first laser plane L on the light exit side of the first optical device 200₁See in particular the description at the first optical device 200 below.

B laser beams L emitted by each laser linear array 101-1 … 101-A₀All have the same wavelength, and the A laser beams L emitted by the laser linear arrays 101-1 … 101-A₀Is decreased or increased in the X direction to facilitate beam combining by the beam combining apparatus 300, as described in the beam combining apparatus 300 section below.

The first optical device 200 is disposed on the light-emitting side of the laser source 100, and is used for transmitting each laser beam L emitted by the laser source 100₀Is collimated in the fast axis direction so as to lead each laser line array 101-1 … 101-A to emit B laser beams L₀Combined to form a sheet-like first laser plane L₁。

Specifically, the first optical device 200 may include a plurality of fast axis collimating lenses 201, the plurality of fast axis collimating lenses 201 are disposed on the light emitting side of the a laser arrays 101-1 … 101-a and correspond to the a laser arrays 101-1 … 101-a one by one, and each fast axis collimating lens 201 is configured to emit B laser beams L from the corresponding laser array 101-1 … 101-a₀Is collimated in the fast axis direction so as to lead each laser line array 101-1 … 101-A to emit B laser beams L₀Combined to form a sheet-like first laser plane L₁. The fast axis collimating lens 201 may be a cylindrical lens.

Each laser beam L₀After passing through the fast axis collimating lens 201, the laser beams are collimated in the fast axis direction, but the slow axis direction also has a divergence angle, and two adjacent laser beams L emitted by each laser linear array 101-1 … 101-A₀After passing through the fast axis collimating lens 201, the B laser beams L emitted from each laser array 101-1 … 101-A are overlapped in the slow axis direction (Z direction)₀Combined to form a sheet-like first laser plane L₁First laser plane L₁The linear light spot is formed by projecting the light beam on the surface of the object. Since the laser source 100 includes the first and second laser beams arranged in the X directionA laser linear arrays 101-1 … 101-A, the first optical device 200 emits A first laser planes L arranged at intervals in the X direction₁。

To improve the collimation effect, each fast axis collimating lens 201 can be closely attached to the light emitting surface of its corresponding laser array 101-1 … 101-a.

The beam combining device 300 is disposed on the light emitting side of the first optical device 200, and is used for combining the a first laser planes L emitted from the first optical device 200₁Superposed to form a sheet-like superposed laser plane L_C。

Specifically, A laser arrays 101-1 … 101-A respectively emit A laser beams with respective wavelengths of lambda₁，λ₂，…,λ_ALaser plane L₁. The beam combining device 300 may include a optical elements 300-1 … 300-a, a optical elements 300-1 … 300-a disposed on the light-emitting side of the first optical device 200 and corresponding to a first laser planes L₁One to one (one to one for a laser arrays 101-1 … 101-a). A first laser planes L are coupled through A optical elements 300-1 … 300-A₁Superposed to form a sheet-like superposed laser plane L_C。

The beam combining process performed by the beam combining device 300 is described below for two cases, i.e., the wavelength of the laser emitted by the a laser bars 101-1 … 101-a decreases or increases in the X direction.

When the wavelength of the laser emitted by the A laser linear arrays 101-1 … 101-A decreases in the X direction:

each optical element 300-1 … 300-A is configured to reflect its corresponding first laser plane L₁And in the presence of other first laser planes L having a larger wavelength₁While transmitting other first laser planes L₁。

In particular, λ₁，λ₂，…,λ_AWhen the reflection wavelength of the optical element 300-1 is gradually decreased, the reflection wavelength is lambda₁First laser plane L₁(ii) a The optical element 300-2 has a reflection wavelength λ₂First laser plane L₁And a transmission wavelength of λ₁First laser plane L₁(ii) a By analogy, the optical element 300-A reflects at a wavelength λ_AFirst laser plane L₁And is transmitted throughWavelength of λ₁，λ₂，…,λ_A-1First laser plane L₁. Finally, the wavelength is λ₁，λ₂，…,λ_AFirst laser plane L₁Combining to form a superimposed laser plane L_C。

When the wavelength of the laser emitted by A laser bars 101-1 … 101-A increases in the X direction:

each optical element 300-1 … 300-A is configured to reflect its corresponding first laser plane L₁And in the presence of other first laser planes L having a smaller wavelength₁While transmitting other first laser planes L₁。

In particular, λ₁，λ₂，…,λ_AWhen sequentially increased, the reflection wavelength of the optical element 300-1 is lambda₁First laser plane L₁(ii) a The optical element 300-2 has a reflection wavelength λ₂First laser plane L₁And a transmission wavelength of λ₁First laser plane L₁(ii) a By analogy, the optical element 300-A reflects at a wavelength λ_AFirst laser plane L₁And a transmission wavelength of λ₁，λ₂，…,λ_A-1First laser plane L₁. Finally, the wavelength is λ₁，λ₂，…,λ_AFirst laser plane L₁Combining to form a superimposed laser plane L_C。

In the opposite direction of the light emitted from the beam combiner 300 (opposite direction to the X direction), the optical element 300-1 at the end may be a mirror, and the remaining optical elements 300-2 … 300-a may be a grating having spectral characteristics of reflection and transmission in a predetermined wavelength band. Because the optical element 300-1 does not need to transmit laser light, it may be a mirror, which may be selected to increase reflectivity.

Further, the optical element 300-2 … 300-A has a beam transmittance and a beam reflectance of 90% or more.

Each optical element 300-1 … 300-A has a first laser plane L corresponding thereto₁The included angles are all 45 degrees +/-10 degrees. Preferably, each optical element 300-1 … 300-A has its corresponding first laser plane L₁The included angles of the two parts are all 45 degrees.

In this embodiment, a laser arrays 101-1 … 101-a are provided, and B laser beams L emitted by each laser array 101-1 … 101-a₀After being collimated by the first optical device 200, the first optical device and the second optical device are combined to form a first laser plane L in a sheet shape₁The beam combining device 300 combines the a first laser planes L emitted from the first optical device 200₁Superposed to form a sheet-like superposed laser plane L_CSuperimposed laser plane L_CThe laser beam is projected to the surface to be processed to form a non-focusing line light spot and is superposed with a laser plane L_CThe light intensity of the special-shaped surface can be changed very little along with the distance between the workpiece and the special-shaped surface, and the special-shaped surface can be machined at a long distance. Superimposed laser plane L_CThe intensity (sharpness of the laser blade) of the laser can be adjusted by the voltage applied by the laser linear array 101-1 … 101-A, and the higher the power is, the more the laser plane L is superposed_CThe stronger (the sharper the laser blade). Modulation of the light intensity can also be achieved by tilting the object plane.

Superimposed laser plane L_CThe Beam quality is very good in the fast axis direction and the BPP (Beam Parameter Product) can be less than 0.5mm rad.

The lasers emitted by the A laser linear arrays 101-1 … 101-A are superposed through the beam combining device 300, and high-power lasers can be output, wherein the power can reach kilowatt, so that the high-power semiconductor laser 1000 can be used for laser processing, laser engraving and the like.

B laser beams L emitted by the first optical device 200 for each laser line 101-1 … 101-A₀The fast axis of the beam is collimated without the need for collimating the slow axis and the spot is not shaped.

A laser arrays 101-1 … 101-A are arranged in X direction, and each laser array 101-1 … 101-A emits B laser beams L₀Arranged in the Z-direction, the laser source 100 can be made compact.

In addition, the central wavelengths of the laser beams emitted by the A laser arrays 101-1 … 101-A are different, and the laser beams are superposed by the beam combining device 300 to form superposed laser beams (superposed laser plane L)_C) For mixing the light, no other dispersive optics are needed, which would otherwise affect the laser quality. This reduces the number of optical components, making the optical path simpler.

Fig. 3 is a schematic structural diagram of a high-power semiconductor laser according to a second embodiment of the present application.

In contrast to the first embodiment, the volume bragg grating device 400 is added to the second embodiment. The second embodiment specifically describes the modified portion, and the rest is referred to the first embodiment.

As shown in fig. 3, the high power semiconductor laser 1000 according to the second embodiment of the present disclosure includes a volume bragg grating device 400, where the volume bragg grating device 400 includes a individual bragg gratings 400-1 … 400-a. The A individual Bragg gratings 400-1 … 400-A are arranged between the first optical device 200 and the beam combining device 300 and are aligned with the A first laser planes L emitted by the A laser linear arrays 101-1 … 101-A₁One-to-one correspondence is adopted, and each volume Bragg grating 400-1 … 400-A is used for corresponding to the first laser plane L₁Is locked to form a second laser plane L₂。

The beam combining device 300 is used for emitting A second laser planes L from the A individual Bragg gratings 400-1 … 400-A₂Superposed to form a laminated laser plane L_C。

Each laser line array 101-1 … 101-a is different because of the final output of the second laser plane L₂Is a mixed wave, and the volume bragg grating device 400 is adopted for wavelength locking and spectrum compression, so that the concentration of wavelength beam combination and the number of laser linear arrays 101-1 … 101-a can be increased, and the total power of the high-power semiconductor laser 1000 is increased.

Fig. 4 is a schematic structural diagram of a high-power semiconductor laser according to a third embodiment of the present application, and fig. 5 is a top view of the high-power semiconductor laser in fig. 4.

In contrast to the first and second embodiments, the third embodiment adds a second optical device 500. The third embodiment specifically describes the modified portion, and the rest of the description refers to the first and second embodiments.

As shown in fig. 4 and fig. 5, a high power semiconductor laser 1000 provided in the third embodiment of the present application includes a second optical device 500, where the second optical device 500 is disposed between the first optical device 200 and the beam combining device 300, and is used for changing each first optical device 200 emitting lightLaser plane L₁Each of which laser beams L₀Divergence angle in the slow axis direction.

Specifically, the second optical device 500 comprises B slow-axis lenses 500-1 … 500-B, the B slow-axis lenses 500-1 … 500-B correspond to the B light-emitting points 102-1 … 102-B one by one, and each slow-axis lens 500-1 … 500-B is used for adjusting the divergence angle of the laser light emitted by the corresponding light-emitting point 102-1 … 102-B on the slow axis. The slow axis lens 500-1 … 500-B may be a converging or diverging lens, arranged according to particular needs. When the slow axis lens 500-1 … 500-B is a converging lens, the laser plane L is finally superimposed_CThe length of the line spot formed on the surface to be machined is relatively short, perpendicular to the superimposed laser plane L_CDirectionally viewing superimposed laser plane L_CWhile, the laser planes L are superposed_CSubstantially rectangular in shape. When the slow axis lens 500-1 … 500-B is a diverging lens, the laser plane L is finally superimposed_CThe length of the line spot formed on the surface to be machined is relatively long, perpendicular to the superimposed laser plane L_CDirectionally viewing superimposed laser plane L_CWhile, the laser planes L are superposed_CSubstantially trapezoidal in shape.

Fig. 6 is a schematic structural diagram of a high-power semiconductor laser according to a fourth embodiment of the present application.

In contrast to the first, second and third embodiments, the fourth embodiment is additionally provided with a third optical device 600. The third embodiment specifically describes the modified portion, and the rest of the description refers to the first, second, and third embodiments.

As shown in fig. 6, the high-power semiconductor laser 1000 according to the fourth embodiment of the present application includes a third optical device 600, where the third optical device 600 is disposed on the light-emitting side of the beam combining device 300, and is used for combining the superimposed laser plane L emitted from the beam combining device 300_CConverging in the fast axis direction.

By means of the third optical arrangement 600, the stack laser plane L is increased_CThe power density of (a).

The above description is only an embodiment of the present application, and not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes performed by the content of the present specification and the attached drawings, or applied to other related technical fields directly or indirectly, are included in the scope of the present invention.