阅读说明：本技术 一种高峰值功率1550nm半导体激光二极管芯片 (High peak power 1550nm semiconductor laser diode chip ) 是由 杜菁菁 于 2019-11-07 设计创作，主要内容包括：本发明公开了一种高峰值功率1550nm半导体激光二极管芯片，包括衬底，所述衬底上依次生长有三个发光层，三个发光层均包括从下往上依次设置的n型波导层、发光区和p型波导层，相邻两个发光层之间设有高掺杂电阻区，本发明实现了单一芯片的高峰值功率输出，输出功率达到30W。可以应用于人眼安全激光雷达、汽车辅助驾驶等领域。(The invention discloses a high peak power 1550nm semiconductor laser diode chip, which comprises a substrate, wherein three light emitting layers sequentially grow on the substrate, the three light emitting layers comprise an n-type waveguide layer, a light emitting region and a p-type waveguide layer which are sequentially arranged from bottom to top, and a high doped resistance region is arranged between every two adjacent light emitting layers. The method can be applied to the fields of eye-safe laser radars, automobile assistant driving and the like.)

1. The utility model provides a high peak power 1550nm semiconductor laser diode chip, includes substrate (5), its characterized in that, it has three luminescent layer to grow in proper order on substrate (5), and three luminescent layer all includes from down up n type waveguide layer (1), luminous zone (2) and p type waveguide layer (3) that set gradually, is equipped with high doping resistance region (4) between two adjacent luminescent layers.

2. The 1550nm semiconductor laser diode chip of claim 1, wherein the high-doped resistance region (4) is formed by using n-type and p-type high-doped regions.

3. The 1550nm semiconductor laser diode chip with high peak power according to claim 2, wherein the total thickness of the heavily doped resistive region (4) is within 200 nm.

4. The 1550nm semiconductor laser diode chip as claimed in any one of claims 1-3, wherein the heavily doped resistive region (4) has a doping concentration of 10^23/cm ^ 3.

5. The 1550nm semiconductor laser diode chip as claimed in claim 1, wherein the n-type waveguide layer (3) and the p-type waveguide layer (3) within the light-emitting layer form a PN junction.

6. The high peak power 1550nm semiconductor laser diode chip according to claim 5, wherein said substrate (5) is an n-type substrate.

7. The 1550nm semiconductor laser diode chip of claim 1, wherein the three light-emitting layers are closely connected.

Technical Field

The invention relates to the technical field of semiconductors, in particular to a high-peak-power 1550nm semiconductor laser diode chip.

Background

The existing field of laser sensing and laser ranging is mainly used for 905nm, 850nm and 760nm semiconductor lasers, so that the potential safety hazard is caused to human eyes, and the attenuation in air is serious. In order to realize the application of safe laser and atmospheric transmission window of human eyes, a 1550nm semiconductor laser chip is developed.

According to the design, high peak power output is realized through nano stacking of the luminescent layer in the chip, and a plurality of pn junctions are interconnected by using the high doping region on the basis of traditional single-layer luminescence.

Disclosure of Invention

The present invention is directed to a semiconductor laser diode chip with high peak power of 1550nm, which solves the above-mentioned problems of the prior art.

In order to achieve the purpose, the invention provides the following technical scheme:

the utility model provides a high peak power 1550nm semiconductor laser diode chip, includes the substrate, it has three luminescent layer to grow in proper order on the substrate, and three luminescent layer all includes from up n type waveguide layer, luminous zone and the p type waveguide layer that sets gradually down, is equipped with the high doping resistance district between two adjacent luminescent layers.

As a further scheme of the invention: the high-doped resistance region is formed by adopting an n-type high-doped region and a p-type high-doped region.

As a further scheme of the invention: the total thickness of the high-doped resistance region is within 200 nm.

As a further scheme of the invention: the doping concentration of the high-doping resistance region is 10^23/cm ^ 3.

As a further scheme of the invention: the n-type waveguide layer and the p-type waveguide layer in the light-emitting layer form a PN junction.

As a further scheme of the invention: the substrate is an n-type substrate.

As a further scheme of the invention: the three light emitting layers are closely connected.

Compared with the prior art, the invention has the beneficial effects that: the invention realizes the high peak power output of a single chip, and the output power reaches 30W. The method can be applied to the fields of eye-safe laser radars, automobile assistant driving and the like.

Drawings

Fig. 1 is an overall structural view of the present invention.

In the figure, a 1-p type waveguide layer, a 2-light emitting region, a 3-n type waveguide layer, a 4-high doping resistance region and a 5-substrate are arranged.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1, embodiment 1: in the embodiment of the invention, the high-peak-power 1550nm semiconductor laser diode chip comprises a substrate 5, wherein three light-emitting layers are sequentially grown on the substrate 5, each light-emitting layer comprises a p-type waveguide layer 1, a light-emitting region 2 and an n-type waveguide layer 3 which are sequentially arranged from bottom to top, and a high-doping resistance region 4 is arranged between every two adjacent light-emitting layers.

Compared with the traditional 1550nm laser chip, the invention realizes the high peak power output chip, and the power is improved to 3 times of the original power.

The high-doped resistance region in the chip plays a key role, an upper PN junction and a lower PN junction are cascaded in the chip, if the high-doped resistance region does not exist, the previous n junction is connected to the next p junction, the diode is in a reverse state, and current cannot be conducted in a forward direction.

After the high-doping resistance region is added, the cascade connection of a plurality of pn junctions can be realized.

This patent technique makes the peak power of single chip higher, and realizes under the less condition of luminous zone size, has avoided traditional physics of adopting a plurality of individual layers luminous chip to pile up, and physics is piled up and can be aroused luminous zone size increase, does not increase power density, makes the optical dimension increase in the application process on the contrary.