阅读说明：本技术 双三角回音壁光谐振模式的半导体六边形微米碟激光器 (Semiconductor hexagonal micron disk laser with double triangular echo wall optical resonance mode ) 是由 曹冰 何耿 王钦华 熊先杰 袁志豪 周浩 罗安林 陈王义博 徐立跃 于 2019-11-18 设计创作，主要内容包括：本发明属于半导体微腔激光器领域，为解决六边形回音壁模式品质因子低与三角形回音壁模式出射难的问题：公开了一种双三角回音壁光谐振模式的半导体六边形微米碟激光器，该装置利用高折射率增益材料的受激辐射物理特性，通过反射衬底提供底面的光反射来降低微腔激光器垂直方向光学损耗，半导体六边形微米碟作为光学谐振腔与激光增益物质，激光器作为光学泵浦源提供光学增益，当泵浦源功率超过微腔激光器阈值后产生激光出射；通过控制泵浦源激光光斑位于六边形微米碟角落，在受激辐射后产生双三角回音壁光学谐振模式的激光出射。本发明相比较常规六边形和三角形回音壁光谐振模式的激光器同时具有高的品质因子和易于激光出射的优点。(The invention belongs to the field of semiconductor micro-cavity lasers, and aims to solve the problems that the quality factor of a hexagonal whispering gallery mode is low and the triangular whispering gallery mode is difficult to emit: the device utilizes the physical characteristic of stimulated radiation of a high-refractive-index gain material, reduces the optical loss of the micro-cavity laser in the vertical direction by providing light reflection on the bottom surface through a reflection substrate, takes the semiconductor hexagonal micro-disk as an optical resonant cavity and a laser gain substance, takes the laser as an optical pumping source to provide optical gain, and generates laser emission after the power of the pumping source exceeds the threshold value of the micro-cavity laser; by controlling the laser spot of the pumping source to be positioned at the corner of the hexagonal micro-disk, laser of a double-triangular echo wall optical resonance mode is generated to be emitted after stimulated radiation. Compared with the conventional hexagonal and triangular echo wall optical resonance mode lasers, the laser has the advantages of high quality factor and easiness in laser emission.)

1. The semiconductor hexagonal micron disk laser of double triangular echo wall optical resonance mode includes: a reflective substrate, a semiconductor hexagonal micro-disk, a laser; the semiconductor hexagonal micro disc is arranged on the reflecting substrate; the method is characterized in that: emergent light of the laser is vertical to the surface of the semiconductor hexagonal micro-disc and irradiates at any corner of six corners of the semiconductor hexagonal micro-disc; the laser of the double triangular echo wall optical resonance mode horizontally emits from one of six side walls of the semiconductor hexagonal micron disk.

2. The double triangular echo wall optical resonance mode semiconductor hexagonal micro disk laser according to claim 1, characterized in that: the laser is a high-power laser, the wavelength of the emergent laser is smaller than the forbidden band light-emitting wavelength of the semiconductor hexagonal micron disk material, and the semiconductor hexagonal micron disk is a regular hexagonal surface.

3. The double triangular echo wall optical resonance mode semiconductor hexagonal micro disk laser according to claim 2, characterized in that: the intensity and the line width of emergent light of the hexagonal micro-disk laser are controlled by the emergent power of the laser.

4. The double triangular echo wall optical resonance mode nitride hexagonal micro disk laser according to claim 1, characterized in that: the size of an excitation area irradiated by the laser at the edge of the semiconductor hexagonal micro-disk is smaller than the surface size of the semiconductor hexagonal micro-disk.

5. The double triangular echo wall optical resonance mode semiconductor hexagonal micro disk laser according to claim 1, characterized in that: the stability of the double triangular whispering gallery mode laser is controlled by the size of the irradiation spot of the laser.

6. The double triangular echo wall optical resonance mode semiconductor hexagonal micro disk laser according to claim 1, characterized in that: the reflective substrate, the semiconductor hexagonal micro disc and the laser are sequentially configured into a monocrystalline silicon reflective substrate, a gallium nitride hexagonal micro disc and an ultraviolet pulse laser; the wavelength of the ultraviolet pulse laser is 325nm, the line width is 100fs, the frequency is 1kHz, and the diameter of a light spot is 10 mu m; the hexagonal microdisc of gallium nitride has a diameter of 25 μm.

7. The double triangular echo wall optical resonance mode semiconductor hexagonal micro disk laser according to claim 1, characterized in that: the hexagonal semiconductor micron disk material is made of one or a combination of more of GaN, AlN, GaAs, InAs, ZnO, InP and CdS.

Technical Field

The invention relates to the field of semiconductor micro-cavity lasers, in particular to a semiconductor hexagonal micro-disk laser with a double triangular echo wall optical resonance mode.

Background

The semiconductor material has wide application value in the field of micro-nano light-emitting devices and photoelectric integration, thereby receiving wide attention of scientists. Especially for semiconductors with high refractive index and direct band gap, such as GaN, ZnO, GaAs, InP, perovskite, etc., the micro-cavity laser can be directly used as a gain material and a resonant cavity to manufacture the micro-cavity laser. In addition, the detector and the light emitting device made of compounds such as GaInN, AlGaN, GaInAs and the like can also cover wide bands of ultraviolet, visible light and near infrared. Compared with a Fabry-perot Mode, the Whispering-billery Mode (Fabry-perot Mode) microcavity laser has the advantages of small volume, high quality factor, low threshold value, easiness in integration and the like, and is widely researched due to the principle that light is totally reflected on the surface of a medium to form periodic resonance. The whispering gallery mode microcavity laser based on the semiconductor material can be used in the fields of optical communication, optical storage, chemical and biological detection and the like.

The study on the semiconductor whispering gallery mode microcavity laser reported at present mainly uses a micron disk structure, wherein a hexagonal micron disk is widely studied, because most of wide bandgap semiconductors are wurtzite structures, and the micron disk obtained by epitaxial growth is in a hexagonal prism geometric shape. Meanwhile, in the study of the optical mode of the hexagonal resonant cavity, most of the reported modes are hexagonal and triangular whispering gallery modes, such as: hexagonal Whispering Gallery Mode schemes (see [ Rui Chen and BoLing, "Room Temperature exciting grading Mode Large from High-Quality Hexagonal ZnO Microdisks", Advanced Materials, vol.23, No.19.pp.2199+,2011]) and triangular Whispering Gallery Mode schemes (see [ Kouno T, "Large Action on grading Galley Mode of Self-Organized GaN Hexagonal Microdisk transistor epitaxial, Ieee Journal of Quantum electronics, vol.47, No.12, No. 1565-1570,2011 ]). Theoretical studies by Wiersig, j. (see "hexagonaldeiectric resonators and micro lasers", Physical Review a, vol.67, No.2, pp.12, 2003) show that the hexagonal whispering gallery mode light path is at the resonator edge, allowing light to exit from the corners due to the principle of optical diffraction, but with a much lower quality factor than the triangular whispering gallery mode. On the other hand, the reflection area of the light in the triangular whispering gallery mode is positioned at the center of each side of the hexagon, so that the internally-circulated light is difficult to emit, and the light emitting efficiency of the laser is reduced. Both of these problems degrade the performance of the semiconductor hexagonal microdisc laser.

Disclosure of Invention

In view of the above, the main objective of the present invention is to provide a semiconductor hexagonal micro disk laser with double triangular echo wall optical resonance mode, so as to solve the problem that the existing solution is limited by the low quality factor of the hexagonal echo wall mode and the difficult emission of the triangular echo wall mode, and have the advantages of high quality factor and easy emission.

In order to achieve the above object, the present invention provides a semiconductor hexagonal micro disk laser of double triangular echo wall optical resonance mode, comprising: a reflective substrate, a semiconductor hexagonal micro-disk, a laser; wherein: the semiconductor hexagonal micro disc is arranged on the reflecting substrate; emergent light of the laser is vertical to the surface of the semiconductor hexagonal micro-disc and irradiates at any corner of six corners of the semiconductor hexagonal micro-disc; the laser of the double triangular echo wall optical resonance mode horizontally emits from one of six side walls of the semiconductor hexagonal micron disk.

The more preferable scheme is as follows: the laser is a single-mode high-power laser, the wavelength of the emergent laser is smaller than the forbidden band light-emitting wavelength of the used semiconductor material, the semiconductor hexagonal micron disk is a regular hexagonal surface, the side surface of the semiconductor hexagonal micron disk is perpendicular to the surface and smooth, and the surface of the reflecting substrate is a smooth plane. The loss of optical resonance strong light is reduced, and the stability of the emergent laser spectrum is enhanced.

Furthermore, the emergent power of the laser can be adjusted to change the intensity and the line width of emergent light of the micron disc laser.

Furthermore, the size of an excitation area irradiated by the laser at the corner of the semiconductor hexagonal micro-disk is smaller than the surface size of the semiconductor hexagonal micro-disk.

Further, the stability of the double triangular whispering gallery mode laser can be adjusted by adjusting the size of the irradiation spot of the laser.

Due to the adoption of the technical scheme, the invention has the beneficial effects that: compared with the existing schemes of the hexagonal echo wall mode laser and the triangular echo wall mode laser, the semiconductor hexagonal micron disk laser with the double triangular echo wall optical resonance mode has the advantages of high quality factor and easiness in emitting.

Drawings

FIG. 1 is a schematic diagram of a semiconductor hexagonal microdisk laser provided in accordance with the present invention;

FIG. 2 is a scanning electron microscope image of a GaN micron disk;

FIG. 3 is a gallium nitride laser output spectrum;

FIG. 4 is a diagram of a simulated light field of a double triangular whispering gallery mode;

FIG. 5 is a graph of the function of reflection times and quality factor for a dual triangular whispering gallery mode;

FIG. 6a is a simulated optical field plot with a ratio of excitation area to resonator area of 5%;

FIG. 6b is a graph of a simulated optical field with a ratio of excitation area to resonator area of 15%;

FIG. 6c is a graph of a simulated optical field with a 20% ratio of excitation area to resonator area;

FIG. 6d is a graph of a simulated optical field with a ratio of excitation area to resonator area of 30%;

wherein, in fig. 1: 1. reflective substrate, 2, semiconductor hexagonal micron dish, 3, laser.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.