阅读说明：本技术 激光元件及其装置
(Laser element and device thereof
) 是由 锺昕展
吕志强 于 2019-07-25 设计创作，主要内容包括：本发明公开一种激光元件及其装置，其中该激光元件包含至少一发光阵列。发光阵列包含规则排列的多个激光单元，具有几何结构相异的至少一第一激光单元以及至少一第二激光单元，且多个激光单元包含一外延叠层及一导电结构设于外延叠层上。其中导电结构包含一第一开口以及一第二开口。(The invention discloses a laser element and a device thereof, wherein the laser element comprises at least one light emitting array. The light emitting array comprises a plurality of laser units which are regularly arranged, at least one first laser unit and at least one second laser unit which have different geometric structures, and the plurality of laser units comprise an epitaxial lamination and a conductive structure which is arranged on the epitaxial lamination. The conductive structure includes a first opening and a second opening.)
1. A laser device, comprising:
the at least one light emitting array comprises a plurality of laser units which are regularly arranged, at least one first laser unit and at least one second laser unit which have different geometrical structures, and the plurality of laser units comprise an epitaxial lamination layer and a conductive structure which is arranged on the epitaxial lamination layer; wherein
The conductive structure includes a first opening and a second opening.
2. The laser device of claim 1, wherein the shape of the first opening is different from the shape of the second opening from a top view.
3. The laser device according to claim 1 or 2, wherein an area of the first opening is different from an area of the second opening from a top view.
4. The laser device of claim 3, wherein the area of the first opening is different from the area of the second opening by more than 10%.
5. The laser element according to claim 1 or 2, wherein the first laser unit includes a first current confinement layer and a first light-emitting region is surrounded by the first current confinement layer, the second laser unit includes a second current confinement layer and a second light-emitting region is surrounded by the second current confinement layer, and a shape of the first light-emitting region is different from a shape of the second light-emitting region from a top view.
6. The laser element according to claim 1 or 2, wherein the first laser unit includes a first current confinement layer and a first light-emitting area is surrounded by the first current confinement layer, the second laser unit includes a second current confinement layer and a second light-emitting area is surrounded by the second current confinement layer, and an area of the first light-emitting area is different from an area of the second light-emitting area in a top view.
7. The laser device of claim 1 or 2, wherein the first laser device has a first upper surface, the second laser device has a second upper surface, and the shape of the first upper surface is different from the shape of the second upper surface when viewed from above.
8. The laser device of claim 1 or 2, wherein the light emitting array is plural and has a plurality of uniformly distributed first laser units.
9. A laser device, comprising:
the laser element according to any one of claims 1 to 8; and
the optical array is arranged on the laser element and comprises a plurality of optical structures.
10. The laser apparatus of claim 9, wherein the plurality of optical structures of the optical array are regularly arranged.
Technical Field
The present invention relates to a laser device and a laser apparatus, and more particularly, to a laser device including a light emitting array and a laser apparatus.
Background
In general, a Vertical Cavity Surface Emitting Laser (VCSEL) has a plurality of light outlets. When the signal processor analyzes the image extracted from the sensing element, the height and undulation information of the surface of the object to be detected can be calculated according to the distance change among the light spots so as to realize image identification, particularly three-dimensional image identification.
Disclosure of Invention
In view of the above, some embodiments of the present invention provide a laser device and an apparatus thereof, which are suitable for image recognition.
The laser device of an embodiment of the invention includes at least one light emitting array. The light emitting array comprises a plurality of laser units which are regularly arranged, at least one first laser unit and at least one second laser unit which have different geometric structures, and the plurality of laser units comprise an epitaxial lamination and a conductive structure which is arranged on the epitaxial lamination. The conductive structure includes a first opening and a second opening.
The laser device of another embodiment of the present invention includes a laser element and an optical array. The laser element comprises at least one light emitting array. The light emitting array comprises a plurality of laser units which are regularly arranged, at least one first laser unit and at least one second laser unit which have different geometric structures, and the plurality of laser units comprise an epitaxial lamination and a conductive structure which is arranged on the epitaxial lamination. The conductive structure includes a first opening and a second opening. The optical array is arranged on the laser element and comprises a plurality of optical structures.
The purpose, technical content, features and effects of the present invention will be more readily understood by the following detailed description of the specific embodiments in conjunction with the accompanying drawings.
Drawings
Fig. 1 is a schematic top view of a laser device according to an embodiment of the invention;
fig. 2A is a schematic cross-sectional view of a laser device according to an embodiment of the invention;
FIG. 2B is a schematic top view of a portion of a laser device according to an embodiment of the invention;
FIG. 3A is a schematic cross-sectional view of a laser device according to an embodiment of the invention;
FIG. 3B is a schematic top view of a portion of a laser device according to an embodiment of the invention;
FIG. 4 is a schematic top view of a portion of a laser device according to an embodiment of the present invention;
fig. 5A to 5J are schematic top views of a portion of a laser device according to an embodiment of the invention; fig. 6A to 6B are schematic top views of a portion of a laser device according to an embodiment of the invention; FIGS. 7A-7B are schematic top views of a portion of a laser device according to an embodiment of the invention;
FIG. 8 is a schematic view of a light emitting array according to an embodiment of the present invention;
FIG. 9 is a schematic view of a light emitting array according to an embodiment of the present invention;
FIG. 10 is a schematic view of a light emitting array according to an embodiment of the present invention;
FIG. 11 is a schematic view of a light emitting array according to an embodiment of the present invention;
FIG. 12 is a schematic view of a light emitting array according to an embodiment of the present invention;
FIG. 13 is a schematic view of a light emitting array according to an embodiment of the present invention;
FIG. 14A is a schematic diagram of a portion of a laser device according to an embodiment of the invention;
FIG. 14B is a diagram of a laser device according to an embodiment of the present invention;
fig. 15 is a schematic view of a laser device according to an embodiment of the invention.
Description of the symbols
1. 2, 3, 4 laser element
81 optical array
811 optical structure
10 light emitting array
10a, 10b, 10c, 10d are arranged in transverse rows
101 substrate
102 first semiconductor structure
103 light emitting structure
104 current confinement layer
104a first current confinement layer
104a1 first inner contour
104b second current confinement layer
104b1 second inner contour
105 second semiconductor structure
106 protective layer
20 conductive structure
20a first side wall
20b second side wall
201 first upper surface
202 second upper surface
30 back conductive structure
81 optical array
811 optical structure
82 focusing mirror
83 Circuit Carrier
831 first electrode pad
832 second electrode pad
84 metal wire
85 first raising member
86 second raising member
9 support
AA' section line
C1, C1 ', C2' first laser unit
C2 second laser unit
D1 first opening
D2 second opening
E-epitaxial stack
E1 first Current conducting region
E2 second Current conducting region
T groove
Detailed Description
The following detailed description of the various embodiments of the invention, taken in conjunction with the accompanying drawings, is provided by way of illustration. Aside from the details given herein, this invention is capable of broad application to other embodiments and accordingly, all such modifications, permutations and equivalents are intended to be included within the scope of the present invention as set forth in the claims below. In the description of the specification, numerous specific details are set forth in order to provide a more thorough understanding of the invention; however, the present invention may be practiced without some or all of these specific details. In other instances, well-known steps or elements have not been described in detail so as not to unnecessarily obscure the present invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It is particularly noted that the drawings are merely schematic and do not represent actual sizes or quantities of elements, and that some of the details may not be fully drawn for clarity of the drawings.
Referring to fig. 1 to 2B, a laser device 1 according to an embodiment of the invention includes a light emitting array 10. For example, the laser element 1 is a semiconductor chip.
The light emitting array 10 includes a plurality of laser units arranged regularly (regular arrangement). By regular arrangement, it is meant that the plurality of laser units have a particular spatial relationship and are arranged in a fixed, repeatable manner. In some regularly arranged light emitting arrays, the spacing between adjacent laser units is substantially the same; in other regularly arranged light emitting arrays, the plurality of laser units are arranged along a specific direction, which may be an extending direction of an x-axis or a y-axis of fig. 1. Compared with a plurality of laser units which are arranged irregularly (random arrangement), the light emitting array comprising the plurality of laser units which are arranged regularly can have higher layout utilization rate, can improve the number of the laser units in unit surface area, can reduce the volume of a laser element, realizes miniaturization design and packaging application, and simultaneously reduces the production cost. In an embodiment, the layout pattern of the plurality of laser units is a closest packing arrangement, but not limited thereto. The "closest packing arrangement" is an arrangement in which the geometric center point of one laser unit and the geometric center points of two adjacent laser units have substantially the same distance therebetween, and the connecting lines of the geometric center points of the three laser units substantially form a regular triangle, and the "substantially the same distance" means a distance difference of 10% or less.
Although the plurality of laser units arranged regularly can have a high layout utilization rate, in the subsequent sensing image capture and image recognition processes, since the laser units have substantially the same pitch and substantially the same shape, the shapes and the brightnesses of the output multiple beams are substantially the same, and thus it is difficult to identify and position the position of each beam output by different laser units. The present embodiment utilizes the geometric structure (e.g., shape, width, length, or area) difference between multiple laser units to output different light shapes and/or intensities (e.g., luminous flux (W) or irradiance (W/m)2) To facilitate subsequent image recognition.
Fig. 1 is a schematic diagram of a laser device 1 including a first laser unit C1 and a second laser unit C2, and some layers or components are omitted for clarity, and only a portion of the layers or components are shown, which does not cover all the structures of the laser device 1. Referring to fig. 1, the plurality of laser units includes at least one first laser unit C1 and at least one second laser unit C2, and the first laser unit C1 and the second laser unit C2 respectively emit lights having different shapes and substantially the same brightness. For example, in the embodiment, the light emitting array 10 includes a plurality of laser units regularly arranged, the light shape of the light output by the first laser unit C1 is triangular, and the light shape of the light output by the second laser unit C2 is circular, so that the position of the light output by the first laser unit C1 projected on the object can be regarded as a reference position in the image recognition stage to be used as a recognition point in the subsequent algorithm. The first laser unit C1 may be optionally located at any position of the light emitting array 10, such as near the edge or center of the light emitting array 10, but not limited thereto.
In the embodiments of the present disclosure, there are many ways to determine or influence the light shapes output by the first laser unit C1 and the second laser unit C2, for example, the embodiments of the present disclosure shown in fig. 2A-2B are implemented by the first opening D1 and the second opening D2 with different shapes; the embodiments shown in fig. 3A-3B are implemented by a first current-conducting area E1 and a second current-conducting area E2 with different shapes; the embodiment shown in fig. 4 achieves the above-mentioned object by the difference in the shapes of the upper surfaces of the first laser unit C1 and the second laser unit C2. In other embodiments, the above manners may be combined to change the shapes of the output light of the first laser unit C1 and the second laser unit C2. The following examples will illustrate how the laser device of the present invention can output different light shapes to facilitate image recognition.
Fig. 2A shows a schematic cross-sectional view of the laser element 1 of fig. 1 along the line AA'. In one embodiment, the light emitting array 10 includes an epitaxial layer E and a protective layer 106 selectively formed on the substrate 101. The epitaxial stack E sequentially includes a first semiconductor structure 102, a light emitting structure 103, a current confinement layer 104, and a second semiconductor structure 105. In one embodiment, the current confinement layer 104 may also be optionally disposed between the light emitting structure 103 and the first semiconductor structure 102. Furthermore, a conductive structure 20 is disposed on the epitaxial stack E. In the present embodiment, the laser device 1 further includes a back conductive structure 30, such that the epitaxial stack E is located between the conductive structure 20 and the back conductive structure 30 to form a vertical type laser device 1. In another embodiment, the laser device 1 is a horizontal (horizontal) structure, and the conductive structure 20 and another conductive structure (not shown) are disposed on the same side of the light emitting structure 103. In some embodiments, the conductive structure 20 is a positive electrode, and the back conductive structure 30 is a negative electrode; the material of the conductive structure 20 or the back conductive structure 30 includes a metal, such as, but not limited to, gold, copper, nickel, titanium, platinum, aluminum, tin, or an alloy thereof. The first semiconductor structure 102 has an N-type conductivity, the second semiconductor structure 105 has a P-type conductivity, and the light emitting structure 103 is a plurality of Quantum well layers (Multiple Quantum Wells), but not limited thereto. Furthermore, the epitaxial stack E of the first laser element C1 has a first upper surface 201 remote from the substrate 101, and the epitaxial stack E of the second laser element C2 has a second upper surface 202 remote from the substrate 101.
In the embodiment, the first semiconductor structure 102 and the second semiconductor structure 105 include a plurality of layers with different refractive indexes alternately and periodically stacked to form a Distributed Bragg Reflector (DBR) so that light emitted from the light emitting structure 103 can be emittedAfter being reflected in the two mirrors to form coherent light, the light is emitted toward the second semiconductor structure 105. The materials of the first semiconductor structure 102, the second semiconductor structure 105 and the light emitting structure 103 include iii-v compound semiconductors, such as AlGaInAs series, AlGaInP series, AlInGaN series, AlAsSb series, InGaAsP series, InGaAsN n series, AlGaAsP series, for example, AlGaInP, GaAs, InGaAs, AlGaAs, GaAsP, GaP, InGaP, AlInP, GaN, InGaN, AlGaN compounds. In the embodiments of the present disclosure, unless otherwise specified, the above chemical expressions include "chemical dosing compound" and "non-chemical dosing compound", wherein the "chemical dosing compound" is, for example, the same total element dose of the group iii elements as the total element dose of the group v elements, and vice versa. For example, the chemical formula of AlGaInAs series represents the group consisting of the group iii elements aluminum (Al) and/or gallium (Ga) and/or indium (In), and the group v element arsenic (As), wherein the total element dose of the group iii elements (aluminum and/or gallium and/or indium) may be the same As or different from the total element dose of the group v element (arsenic). When the compounds represented by the above chemical expression formulas are compounds corresponding to the chemical doses, the AlGaInAs series is represented (Al)y1Ga(1-y1))1-x1Inx1As, wherein x1 is more than or equal to 0 and less than or equal to 1, and y1 is more than or equal to 0 and less than or equal to 1; AlGaInP series of representatives (Al)y2Ga(1-y2))1-x2Inx2P, wherein x2 is more than or equal to 0 and less than or equal to 1, and y2 is more than or equal to 0 and less than or equal to 1; AlInGaN series as represented (Al)y3Ga(1-y3))1-x3Inx3N, wherein x3 is more than or equal to 0 and less than or equal to 1, and y3 is more than or equal to 0 and less than or equal to 1; AlAsSb series representing AlAsx4Sb(1-x4)Wherein x4 is more than or equal to 0 and less than or equal to 1; the InGaAsP series represents Inx5Ga1-x5As1-y4Py4Wherein x5 is more than or equal to 0 and less than or equal to 1, and y4 is more than or equal to 0 and less than or equal to 1; the InGaAsN series represents Inx6Ga1-x6As1-y5Ny5Wherein x6 is more than or equal to 0 and less than or equal to 1, and y5 is more than or equal to 0 and less than or equal to 1; the AlGaAsP series representing Alx7Ga1-x7As1-y6Py6Wherein x7 is more than or equal to 0 and less than or equal to 1，0≤y6≤1。
Depending on the material, the light emitting structure 103 may emit infrared light with a peak wavelength (peak wavelength) between 700nm and 1700nm, red light with a peak wavelength between 610nm and 700nm, yellow light with a peak wavelength between 530nm and 570nm, green light with a peak wavelength between 490nm and 550nm, blue or deep blue light with a peak wavelength between 400nm and 490nm, or ultraviolet light with a peak wavelength between 250nm and 400 nm. The passivation layer 106 can protect the first semiconductor structure 102, the light emitting structure 103 and the second semiconductor structure 105, and can also be used for electrical isolation. In the present embodiment, the protection layer 106 is formed on the second semiconductor structure 105 and on the sidewalls of the first semiconductor structure 102, the light emitting structure 103 and the second semiconductor structure 105.
Referring to fig. 2A, in an embodiment, the conductive structure 20 is disposed on the epitaxial stack E, and the conductive structure 20 includes a first opening D1 and a second opening D2. The first opening D1 is disposed on the first upper surface 201, and the second opening D2 is disposed on the second upper surface 202. The first opening D1 and the second opening D2 are defined by a first sidewall 20a and a second sidewall 20b of the conductive structure 20, respectively. The first opening D1 and the second opening D2 expose the passivation layer 106, and light is emitted from the first opening D1 and the second opening D2. In another embodiment, when the protection layer 106 is not formed, the first opening D1 and the second opening D2 expose the second semiconductor structure 105.
The laser device 1 of the present embodiment further includes a groove T located between the first laser unit C1 and the second laser unit C2 for defining the first laser unit C1 and the second laser unit C2. The recess T exposes the first semiconductor structure 102, and the passivation layer 106 and the conductive structure 20 are sequentially formed on the exposed first semiconductor structure 102. In this embodiment, trenches T are formed by Dry Etching (Dry Etching) or Wet Etching (Wet Etching), so that a plurality of laser units, such as a plurality of pillars, are disposed on the substrate 101.
After forming trenches T to define a plurality of laser units, a material is oxidized in a region where the current confinement layer 104 is to be formed by an oxidation process, thereby forming the current confinement layer 104 having a low conductivity,the fabrication process for forming the current confinement layer 104 is not limited thereto. In one embodiment, a current confinement layer 104 of low conductivity is formed in a plurality of laser cells by an ion implantation (ion implantation) process, and the current conduction regions (e.g., E1, E2) are simultaneously defined by a photomask. The ion implantation may be performed by implanting hydrogen ions (H) in a region where the current confinement layer 104 is to be formed+) Helium ion (He)+) Or argon ion (Ar)+) Etc. In another embodiment, an oxidation process and an ion implantation process may be used simultaneously to form a plurality of laser units in the light emitting array 10, such as: the first current confinement layer 104A is formed by an oxidation process and the second current confinement layer 104b is formed by an ion implantation process.
In the present embodiment, the current confinement layer 104 is disposed between the light emitting structure 103 and the second semiconductor structure 105, and the first laser unit C1 includes a first current confinement layer 104a and a corresponding first current conducting region E1. In detail, the first current confinement layer 104a has a first inner contour 104a1, the first current conducting area E1 is surrounded by the first current confinement layer 104a, and the first inner contour 104a1 defines the range of the first current conducting area E1; the second laser unit C2 includes a second current confinement layer 104b and a corresponding second current-conducting region E2, in detail, the second current confinement layer 104b has a second inner contour 104b1, the second current-conducting region E2 is surrounded by the second current confinement layer 104b, and the second inner contour 104b1 defines a range of the second current-conducting region E2. The first current-conducting region E1 and the second current-conducting region E2 are located at positions corresponding to the first opening D1 and the second opening D2, respectively, so that photons generated by the excitation of the electrical energy can pass through the first opening D1 and the second opening D2 and exit the first laser element C1 and the second laser element C2.
Fig. 2B is a schematic top view of the first laser element C1 and the second laser element C2. For clarity, fig. 2B only shows the opening, the current-conducting area, and the top surface. As shown in fig. 2B, the first current-conducting region E1 and the second current-conducting region E2 have substantially the same shape (e.g., circular) and area, and the first upper surface 201 of the first laser unit C1 and the second upper surface 202 of the second laser unit C2 have substantially the same shape (e.g., circular) and area, so that the light output from the first laser element C1 and the second laser element C2 are determined by the shapes of the first opening D1 and the second opening D2, respectively. The bottom portion of the net in fig. 2B is the area of the first upper surface 201 and the second upper surface 202.
In detail, in the present embodiment, from the top view, the first opening D1 is completely located in the first current-conducting region E1 and the first upper surface 201, and the area of the first opening D1 is not greater than the area of the first current-conducting region E1 and the first upper surface 201, so that the shape of the light output by the first laser element C1 can be determined by the shape of the first opening D1, and is not affected by the geometric structures of the first current-conducting region E1 and the first upper surface 201. Similarly, the second opening D2 is completely located in the second current-conducting region E2 and the second top surface 202, and the area of the second opening D2 is not larger than the area of the second current-conducting region E2 and the second top surface 202, so that the light shape output by the second laser element C2 can be determined by the shapes of the first opening D1 and the second opening D2, and is not affected by the geometric structures of the second current-conducting region E2 and the second top surface 202.
In addition, in fig. 2B, since the first current-carrying region E1 and the second current-carrying region E2 have substantially the same area, the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is inputted to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2). Further, although the shape of the first opening D1 is different from that of the second opening, the first opening D1 and the second opening D2 have substantially the same area, and thus the first laser unit C1 and the second laser unit C2 have substantially the same luminous flux (W).
Further, as shown in fig. 2B, the first opening D1 is triangular and the second opening D2 is circular, and thus, the light shape of the light output from the first laser unit C1 is triangular and the light shape of the light output from the second laser unit C2 is circular. In another embodiment, the first opening D1 is square and the second opening D2 is circular, so the light shape of the light output by the first laser unit C1 is square and the light shape of the light output by the second laser unit C2 is circular. In yet another embodiment, the first opening D1 is irregular and the second opening D2 is circular, and thus, the light shape of the light output by the first laser unit C1 is irregular and the light shape of the light output by the second laser unit C2 is circular. The shapes of the first opening D1 and the second opening D2 are not limited to the above description, for example: may be oval, diamond, polygonal, etc. Since the shape of the light output by the first laser element C1 and the second laser element C2 is determined by the shape of the first opening D1 and the second opening D2 in this embodiment, fig. 1 shows a schematic top view of the openings.
In one embodiment, the laser device 1 includes a groove T between the first laser unit C1 and the second laser unit C2 to define the first laser unit C1 and the second laser unit C2 by the groove T. The groove T exposes the first semiconductor structure of the first semiconductor layer
Fig. 3A to 3B show a schematic cross-sectional view and a schematic partial top view of a laser device 2 according to an embodiment. The first laser unit C1 and the second laser unit C2 have different shapes of current conducting areas, thereby limiting the shape of the light output by the light emitting structure 103 and further changing the shapes of the light output by the first laser unit C1 and the second laser unit. That is, the shapes of the first current-conducting region E1 and the second current-conducting region E2 can be used to determine or influence the light shapes outputted by the first laser unit C1 and the second laser unit C2.
For clarity, fig. 3B only shows the opening, the current-conducting area, and the top surface. As shown in fig. 3B, the first opening D1 and the second opening D2 have substantially the same area and shape (e.g., circular shape), and the first upper surface 201 of the first laser unit C1 and the second upper surface 202 of the second laser unit C2 have substantially the same area and shape (e.g., circular shape), so the light shape outputted by the first laser element C1 and the second laser element C2 is determined by the shapes of the first current conducting region E1 and the second current conducting region E2, respectively.
In detail, from the top view, the first current-conducting region E1 is completely located in the first opening D1 and the first upper surface 201, and the area of the first current-conducting region E1 is not greater than the area of the first opening D1 and the first upper surface 201, so that light emitted after current flows through the first current-conducting region E1 can be completely emitted from the first opening D1, and thus the light output by the first laser unit C1 is determined by the shape of the first current-conducting region E1 and is not affected by the area or shape of the first opening D1 and the first upper surface 201. Similarly, the second current-conducting region E2 is completely located in the second opening D2 and the second top surface 202, and the area of the second current-conducting region E2 is not greater than the areas of the second opening D2 and the second top surface 202, so that light emitted after current flows through the second current-conducting region E2 can be completely emitted from the second opening D2, and the light shape output by the second laser unit C2 is determined by the shape of the second current-conducting region E2, and is not affected by the geometric structures of the second opening D2 and the second top surface 202.
In fig. 3B, the first current-carrying region E1 and the second current-carrying region E2 have different shapes but substantially the same area, so that the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is input to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2) And a luminous flux (W).
In the present embodiment, the shape of the first current conducting region E1 is different from the shape of the second current conducting region E2, for example, the shape of the first current conducting region E1 is triangular, and the shape of the second current conducting region E2 is circular, so that the light shape of the light output by the first laser unit C1 is triangular, and the light shape of the light output by the second laser unit C2 is circular. The shape of the first current conduction region E1 is not limited to the above description, for example: can be square, diamond, triangle, ellipse, polygon, circle, irregular shape, etc. The shape of the second current conduction region E2 is not limited to the above description, for example: can be square, diamond, triangle, ellipse, polygon, triangle, irregular shape, etc. Referring to fig. 1, the top view of the present embodiment corresponds to that of fig. 1, since the light shape outputted by the first laser element C1 and the second laser element C2 is determined by the shapes of the first current-conducting region E1 and the second current-conducting region E2 in the present embodiment, fig. 1 is a top view of the current-conducting regions of the first laser element C1 and the second laser element C2.
Fig. 4 is a partial top view of a laser device according to an embodiment and shows only the opening, the current-conducting area, and the top surface. In the present embodiment, the first opening D1 and the second opening D2 have substantially the same area and shape (e.g., circular shape), and the shapes of the first upper surface 201 of the first laser unit C1 and the second upper surface 202 of the second laser unit C2 are different, so as to determine or influence the light shape outputted by the first laser unit C1 and the second laser unit C2.
As described above, the current confinement layer may be formed by an oxidation process or an ion implantation process. As shown in fig. 4, when the first current confinement layer 104a and the second current confinement layer 104b are formed by an oxidation process, the shape of the epitaxial stack E of the first laser unit C1 (or the shape of the first top surface 201) also affects the shape of the first current-conducting region E1, and the shape of the epitaxial stack E of the second laser unit C2 (or the shape of the second top surface 202) also affects the shape of the second current-conducting region E2. For example, when the epitaxial layer E of the first laser unit C1 is a triangular prism, the shape of the first current-conducting region E1 is substantially triangular due to the diffusion of oxygen into the first laser unit C1 through the trench T; similarly, when the epitaxial stack E of the second laser unit C2 is cylindrical, the shape of the second current conducting region E2 substantially appears circular. However, when the first current confinement layer 104a is formed by ion implantation or other means, the shape of the epitaxial stack E of the first laser unit C1 and the shape of the first current conducting region E1 do not necessarily have the above relationship, for example: the shape of the epitaxial stack E of the first laser cell C1 is circular and the shape of the first current conducting region E1 is triangular.
In the embodiment of fig. 4, the current confinement layer 104 is formed by an oxidation process, so the shape of the first and second current confinement layers E1 and E2 of the first and second laser units C1 and C2 is substantially controlled by the shape of the first and second top surfaces 201 and 202 of the epitaxial stack E of the first and second laser units C1 and C2. Since the shape of the first upper surface 201 (e.g., triangular) is different from the shape of the second upper surface 202 (e.g., circular), the shape of the first current confinement layer E1 is also different from the shape of the second current confinement layer E2 after the oxidation process. In addition, the first current-conducting region E1 is completely located in the first opening D1 and the first top surface 201, and the second current-conducting region E2 is completely located in the second opening D2 and the second top surface 202, so that light emitted after current flows through the first and second current-conducting regions E1 and E2 can be completely emitted from the first and second openings D1 and D2, respectively, so that the light output by the first and second laser units C1 and C2 can be determined by the shapes of the first and second top surfaces 201 and 202, and is not affected by the geometric structures of the first and second openings D1 and D2.
In fig. 4, the first current-carrying region E1 and the second current-carrying region E2 have different shapes but substantially the same area, so that the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is input to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2) And a luminous flux (W).
The shape of the first upper surface 201 is not limited to the above description, for example: can be square, diamond, triangle, ellipse, polygon, circle, irregular shape, etc. The shape of the second upper surface 202 is not limited to the above description, for example: can be square, diamond, triangle, ellipse, polygon, triangle, irregular shape, etc. Referring to fig. 1, the top view of the present embodiment corresponds to that of the present embodiment, since the shapes of the first upper surface 201 and the second upper surface 202 determine the light shapes outputted by the first laser element C1 and the second laser element C2, fig. 1 is a top view of the current conducting regions of the first laser element C1 and the second laser element C2.
Fig. 5A to 5J are partial schematic top views of laser elements according to other embodiments of the present invention, and for brevity, only one first laser element C1 and one second laser element C2 in the laser elements are taken as examples, and only the opening, the current conducting region, and the upper surface are shown, and other relevant descriptions can refer to the foregoing paragraphs. In addition, the upper surface, the opening and the current conducting area are illustrated as triangles or circles, however, as described in other paragraphs, the shapes are not limited thereto.
In fig. 5A, the shape of the first opening D1 is different from the shape of the second opening D2, the shape of the first current-conducting region E1 is different from the shape of the second current-conducting region E2, and the first upper surface 201 and the second upper surface 202 have substantially the same shape (e.g., circular shape). The areas of the first opening D1 and the second opening D2 are smaller than the first current conducting area E1 and the second current conducting area E2, respectively, and the first opening D1 and the second opening D2 are completely located in the first current conducting area E1 and the second current conducting area E2, respectively, so that the light shapes output by the first laser device C1 and the second laser device C2 are determined by the shapes of the first opening D1 and the second opening D2, respectively. Similarly, the first current-carrying region E1 and the second current-carrying region E2 have different shapes but substantially the same area, so that the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is inputted to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2). Further, although the shape of the first opening D1 is different from that of the second opening, the first opening D1 and the second opening D2 have substantially the same area, and thus the first laser unit C1 and the second laser unit C2 have substantially the same luminous flux (W).
In fig. 5B, the shape of the first opening D1 is different from the shape of the second opening D2, the shape of the first upper surface 201 is different from the shape of the second upper surface 202, and the first current-conducting area E1 and the second current-conducting area E2 have substantially the same shape (e.g., circular shape). The areas of the first opening D1 and the second opening D2 are smaller than the first current-conducting area E1 and the second current-conducting area E2, respectively, and the first opening D1 and the second opening D2 are completely located in the first current-conducting area E1 and the second current-conducting area E3583, respectivelyIn the current-conducting region E2, the light shapes output from the first laser element C1 and the second laser element C2 are determined by the shapes of the first opening D1 and the second opening D2, respectively. Similarly, since the first current-carrying region E1 and the second current-carrying region E2 have substantially the same area, the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is inputted to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2). Further, although the shape of the first opening D1 is different from that of the second opening, the first opening D1 and the second opening D2 have substantially the same area, and thus the first laser unit C1 and the second laser unit C2 have substantially the same luminous flux (W).
In fig. 5C, the shape of the first opening D1 is the same as (e.g., circular) the shape of the second opening D2, the shape of the first current-conducting region E1 is different from the shape of the second current-conducting region E2, and the shape of the first upper surface 201 is also different from the shape of the second upper surface 202. The areas of the first opening D1 and the second opening D2 are larger than the first current conducting area E1 and the second current conducting area E2, respectively, and the first current conducting area E1 and the second current conducting area E2 are completely located in the first opening D1 and the second opening D2, respectively, so that the light shapes output by the first laser device C1 and the second laser device C2 are determined by the shapes of the first current conducting area E1 and the second current conducting area E2, respectively. Similarly, the first current-carrying region E1 and the second current-carrying region E2 have different shapes but substantially the same area, so that the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is inputted to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2) And a luminous flux (W).
In fig. 5D, the shape of the first opening D1 is different from the shape of the second opening D2, the first upper surface 201 and the second upper surface 202 have substantially the same shape, and the shape of the first current-conducting region E1 is different from the shape of the second current-conducting region E2. First opening D1The area of the second opening D2 is larger than the first current-conducting area E1 and the second current-conducting area E2, and the first current-conducting area E1 and the second current-conducting area E2 are completely located in the first opening D1 and the second opening D2, respectively, so the light shapes output by the first laser device C1 and the second laser device C2 are determined by the shapes of the first current-conducting area E1 and the second current-conducting area E2, respectively. Similarly, the first current-carrying region E1 and the second current-carrying region E2 have different shapes but substantially the same area, so that the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is inputted to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2) And a luminous flux (W).
In fig. 5E, the shape of the first opening D1 is different from the shape of the second opening D2, the shape of the first current conducting region E1 is different from the shape of the second current conducting region E2, and the shape of the first upper surface 201 is different from the shape of the second upper surface 202. The areas of the first opening D1 and the second opening D2 are larger than the first current conducting area E1 and the second current conducting area E2, respectively, and the first current conducting area E1 and the second current conducting area E2 are completely located in the first opening D1 and the second opening D2, respectively, so that the light shapes output by the first laser device C1 and the second laser device C2 are determined by the shapes of the first current conducting area E1 and the second current conducting area E2, respectively. Similarly, the first current-carrying region E1 and the second current-carrying region E2 have different shapes but substantially the same area, so that the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is inputted to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2) And a luminous flux (W).
In fig. 5F, the shape of the first opening D1 is different from the shape of the second opening D2, the shape of the first current-conducting region E1 is different from the shape of the second current-conducting region E2, and the shape of the first upper surface 201 is different from the shape of the second upper surface 202. First of allThe areas of the opening D1 and the second opening D2 are smaller than the first current-conducting area E1 and the second current-conducting area E2, respectively, and the first opening D1 and the second opening D2 are completely located in the first current-conducting area E1 and the second current-conducting area E2, respectively. Therefore, the light shapes output by the first laser element C1 and the second laser element C2 are determined by the shapes of the first opening D1 and the second opening D2, respectively. Similarly, the first current-carrying region E1 and the second current-carrying region E2 have different shapes but substantially the same area, so that the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is inputted to the laser units2) Thus, the first laser unit C1 and the second laser unit C2 have substantially the same irradiance (W/cm)2). Further, although the shape of the first opening D1 is different from that of the second opening, the first opening D1 and the second opening D2 have substantially the same area, and thus the first laser unit C1 and the second laser unit C2 have substantially the same luminous flux (W).
Referring to fig. 5G, the first top surface 201 and the second top surface 202 have substantially the same shape, the first current-conducting area E1 and the second current-conducting area E2 have substantially the same shape, and the shape of the first opening D1 is different from the shape of the second opening D2. The area of the second current-conducting region E2 is smaller than the second opening D2, and the second current-conducting region E2 is completely located in the second opening D2, so the shape of the light output by the second laser element C2 is determined by the shape of the second current-conducting region E2. However, the first current-conducting region E1 is not located in the first opening D1 completely, so the light output by the first laser device C1 is in the overlapping region (e.g., gray region) of the first opening D1 and the first current-conducting region E1, which is different from the light output by the second laser device C2. Therefore, the light shape outputted from the first laser element C1 is determined by the first opening D1 and the first current conducting area E1. Similarly, the first current-carrying region E1 and the second current-carrying region E2 have substantially the same area, so that the first laser unit C1 and the second laser unit C2 have substantially the same current density (a/cm) when current is inputted into the laser units2) Thereby, the first laser unit C1 and the second laserCell C2 has substantially the same irradiance (W/cm)2)。
Similarly, the determination of the optical shape of the laser device in fig. 5H to 5J can be described with reference to fig. 5G, and thus, the description thereof is not repeated.
As described above, instead of using the light shape as the identification reference point, the brightness may be used as the identification reference point. The following examples will illustrate how the laser device of the present invention can output different brightness to facilitate image recognition.
Similarly, fig. 6A to 7B are partial schematic top views of other embodiments of the laser device of the present invention, and for the sake of brevity, only one first laser element C1 and one second laser element C2 in the laser device are taken as examples, and only the opening, the current conducting region, and the top surface are shown.
In fig. 6A, the first upper surface 201 and the second upper surface 202 have substantially the same shape but different areas, the first current-conducting region E1 and the second current-conducting region E2 have substantially the same shape but different areas, and the first opening D1 and the second opening D2 have substantially the same shape and area. In detail, the first and second upper surfaces 201 and 202 are circular, the area of the first upper surface 201 is smaller than that of the second upper surface 202, the first and second current-conducting regions E1 and E2 are circular, the area of the first current-conducting region E1 is smaller than that of the second current-conducting region E2, the first and second openings D1 and D2 are circular, and the area of the first opening D1 is equal to that of the second opening D2. The first opening D1 and the second opening D2 are completely located in the first current conducting area E1 and the second current conducting area E2, respectively, so that the light shapes output by the first laser element C1 and the second laser element C2 are determined by the first opening D1 and the second opening D2, respectively, and thus the first laser unit C1 and the second laser unit C2 output light shapes with the same shape.
Since the first laser unit C1 has a smaller current-conducting area, the first laser unit C1 has a higher current density (a/cm) than the second laser unit C2 when current is inputted to the laser device2). Thus, the first laser lightIrradiance (W/cm) output by cell C12) Higher than the second laser unit C2, so that the first laser unit C1 can serve as an identification reference point. In addition, since the first opening D1 and the second opening D2 have substantially the same area, the first laser unit C1 and the second laser unit C2 have substantially the same luminous flux (W).
In fig. 6B, the shape and area of the first upper surface 201 are different from those of the second upper surface 202, the first current-conducting region E1 and the second current-conducting region E2 have different shapes and areas, and the first opening D1 and the second opening D2 have substantially the same shape and area. In detail, the first top surface 201 and the first current-conducting area E1 are both triangular in shape, and the second top surface 202 and the second current-conducting area E2 are both circular in shape. The areas of the first top surface 201 and the first current conducting area E1 are smaller than the areas of the second top surface 201 and the second current conducting area E2, respectively. Since the areas of the first opening D1 and the second opening D2 are smaller than the first current conducting area E1 and the second current conducting area E2, respectively, and the first opening D1 and the second opening D2 are completely located in the first current conducting area E1 and the second current conducting area E2, respectively, the light shapes output by the first laser element C1 and the second laser element C2 are determined by the shapes of the first opening D1 and the second opening D2, respectively, so that the first laser unit C1 and the second laser unit C2 output light shapes with the same shape.
Since the area of the first current conducting region E1 is smaller than that of the second current conducting region E2, the first laser unit C1 has a higher current density (a/cm) than the second laser unit C2 when current is inputted to the laser element2) Irradiance (W/cm) output by the first laser unit C12) Still higher than the second laser unit C2 so that the first laser unit C1 can serve as an identification reference point. In addition, the first opening D1 and the second opening D2 have substantially the same area, and thus the first laser unit C1 and the second laser unit C2 have substantially the same luminous flux (W).
As shown in fig. 7A, the shape and area of the first upper surface 201 are the same as those of the second upper surface 202, and the shape and area of the first current-conducting region E1 and the second current-conducting regionThe shape and area of the domain E2 are the same, and the first opening D1 and the second opening D2 have substantially the same shape (e.g., circular shape) and different areas, and the area of the first opening D1 in this embodiment is larger than the area of the second opening D2. The areas of the first current-conducting region E1 and the second current-conducting region E2 are larger than the areas of the first opening D1 and the second opening D2, respectively, and the first opening D1 and the second opening D2 are completely located in the first current-conducting region E1 and the second current-conducting region E2, respectively, so that the shapes of the light output by the first laser element C1 and the second laser element C2 are determined by the shapes of the first opening D1 and the second opening D2, respectively, and since the first opening D1 of the first laser unit C1 is larger than the second opening D2 of the second laser unit C2, when a current is input into the laser element, the first laser unit C1 has a higher light flux (W) than the second laser unit C2, so that the first laser unit C1 can serve as a recognition reference point. In addition, since the first and second laser units C1 and C2 have current-conducting regions of the same area, the first and second laser units C1 and C2 have substantially the same current density (a/cm) when current is input to the laser device2). Therefore, the irradiance (W/cm) output by the first laser unit C1 and the second laser unit C22) Are substantially the same.
As shown in fig. 7B, the shape and area of the first upper surface 201 are different from those of the second upper surface 202, the first current-conducting area E1 and the second current-conducting area E2 have different shapes and areas, and the first opening D1 and the second opening D2 have substantially the same shape (e.g., circular shape) and different areas, and the area of the first opening D1 in this embodiment is larger than that of the second opening D2. In detail, the first top surface 201 and the first current-conducting area E1 are both triangular in shape, and the second top surface 202 and the second current-conducting area E2 are both circular in shape. The areas of the first top surface 201 and the first current conducting area E1 are smaller than the areas of the second top surface 201 and the second current conducting area E2, respectively. Since the areas of the first opening D1 and the second opening D2 are smaller than the first current conducting area E1 and the second current conducting area E2, respectively, and the first opening D1 and the second opening D2 are completely located in the first current conducting area E1 and the second current conducting area E2, respectively, the light shapes output by the first laser element C1 and the second laser element C2 are determined by the shapes of the first opening D1 and the second opening D2, respectively, so that the first laser unit C1 and the second laser unit C2 output light shapes with the same shape.
Since the area of the first current conducting region E1 is smaller than that of the second current conducting region E2, the first laser unit C1 has a higher current density (a/cm) than the second laser unit C2 when current is inputted to the laser element2) Irradiance (W/cm) output by the first laser unit C12) Still higher than the second laser unit C2. In addition, the first opening D1 has a larger area than the second opening D2, and thus the first laser unit C1 has a higher light flux (W) than the second laser unit C2. In the present embodiment, the irradiance (W/cm) due to the first laser unit C12) And the light flux (W) is different from that of the second laser unit C2, the first laser unit C1 can be used as an identification reference point.
In one embodiment, the light emitting array 10 includes a first laser unit C1 and a plurality of second laser units C2 regularly arranged, and the first laser unit C1 and the second laser unit C2 have similar or identical shapes and different sizes. Similarly, the shapes described herein refer to the shapes of the opening, the current conducting region or the upper surface, and can be, for example, those described in fig. 7A to 7B. The shape of the first laser unit C1 and the shape of the second laser unit C2 are both circular, but the area of the first laser unit C1 is larger than that of the second laser unit C2, so the area of the light beam output by the first laser unit C1 is larger than that of the light beam output by the second laser unit C2. The difference between the two is preferably more than 10% to increase the recognition effect. In other words, the openings, the current-conducting areas or the upper surfaces have the same shape and different areas, so that the light fluxes (W) and/or irradiances (W/cm) output by the first laser unit C1 and the second laser unit C22) And different, the subsequent image identification is facilitated. In addition, since the geometry of the first opening D1 is the same as that of the second opening D2, and/or the geometry of the first current-conducting region E1 is the same as that of the second current-conducting region E2, it is helpful to improve the yield of the manufacturing process.
Current density (A/cm) of laser unit2) Is determined by the current conducting area, and further determines the irradiance (W/cm) output by the laser unit2). When the light shape output by the laser unit is determined by the current conducting area, the light flux (W) of the laser unit is determined by the current conducting area. When the light shape output by the laser unit is determined by the opening, the light flux (W) of the laser unit is determined by the opening. Therefore, irradiance (W/cm)2) Independent of the geometry of the opening, whereas the luminous flux (W) is influenced by the geometry of the opening.
In summary, the first laser unit C1 and the second laser unit C2 can output different light shapes and/or different brightness as the identification points of the following algorithm by at least one of the following three methods: adjusting the geometrical structure of the opening; secondly, adjusting the geometrical structure of the current conducting area; and (III) adjusting the geometrical structure of the epitaxial lamination layer (or the upper surface).
In the embodiments of the present application, "shape" and "dimension (e.g., width, length or area)" refer to the shape and dimension (e.g., width, length or area) observed from the top view angle of the laser device (e.g., the viewing angle shown in fig. 1), and can be observed with the naked eye, a microscope or other equipment (e.g., infrared CCD), or a combination of two or more of the above.
Although the embodiments of the present application refer to the shape or size (e.g., width, length or area) of the epitaxial layer (or top surface), the opening, and the current conducting region viewed from above, the geometric structures are not limited to the above, so long as the two structures can output light with different shapes and/or brightness, and are within the scope of the present disclosure. Alternatively, the light emission frequencies of the plurality of laser units may be different (for example, the light emission frequency of the first laser unit C1 is 10/s, and the light emission frequency of the second laser unit C2 is 20/s) to be used as the identification point of the algorithm.
Referring to fig. 8, in an embodiment, the light emitting array 10 includes a plurality of second laser units C2 regularly arranged, and a plurality of first laser units C1, C1', C1 ″ having different shapes from the second laser units C2. The first laser units C1, C1' and C1 ″ also have different shapes, such as but not limited to an oval, a triangle, a quadrangle or other polygon, a diamond or an irregular shape, and the second laser units C2 have the same shape, such as a circle. Therefore, in the image recognition stage, the light output by at least one of the first laser units C1, C1', C1 "can be regarded as a reference point for recognition in the subsequent algorithm. In another embodiment, the number of the first laser units with different shapes may be four, five, six or more, and when the number of the first laser units with different shapes is larger, it is beneficial to improve the accuracy of the subsequent algorithm for processing data to identify the image. In consideration of the complexity, cost and recognition accuracy of the manufacturing process, the ratio of the number of the first laser units C1 to the number of the second laser units C2 is preferably 6% to 20%, and in one embodiment, the light emitting array 10 has one first laser unit C1 and fifteen second laser units C2.
Referring to fig. 9, the light emitting array 10 includes a plurality of second laser units C2 regularly arranged, and a plurality of first laser units C1, C1', C1 ″ having a different shape from the second laser units C2, and the plurality of laser units are regularly arranged in a closest packing manner. In detail, the light emitting array 10 of the present embodiment has a plurality of rows 10a, 10b, 10C, 10d, and the laser units in adjacent rows are staggered, for example, the first laser unit C1 in the row 10b is disposed between the first second laser unit C2 and the second laser unit C2 in the row 10a, and the geometric center points of the three laser units are connected to form a regular triangle. In this embodiment, the laser units of row 10a have different X-coordinate values than the laser units of adjacent row 10b, and the laser units of row 10a have the same X-coordinate values as the laser units of non-adjacent row 10 c. Further, the first laser units C1, C1', C1 ″ may be randomly scattered in the light emitting matrix 10; alternatively, in other embodiments, the first laser units C1, C1', C1 "are located in the same relative positions of the transverse rows 10b, 10C, 10d, respectively, for example: the first laser units C1, C1', C1 "are located leftmost in the horizontal rows 10b, 10C, 10d, respectively.
The shape of the laser unit illustrated in fig. 8 and 9 refers to the shape of the opening, the current conducting region or the upper surface, and fig. 8 and 9 only show the shape of one of the opening, the current conducting region or the upper surface. The detailed description may refer to the description of fig. 2A to 5J.
Referring to fig. 10 to 13 together, a design of a light emitting array 10 according to some embodiments of the present invention is shown, such as but not limited to a 1-row-4-column array layout, which is suitable for the layout pattern shown in fig. 14A, so that a laser device 3 having a plurality of light emitting arrays 10 can be formed.
Referring to fig. 10, the light emitting array 10 has a first laser unit C1 and a plurality of second laser units C2, such as but not limited to: the first laser unit C1 and the second laser unit C2 have different shapes.
Referring to fig. 11, the light emitting array 10 has a plurality of first laser units C1, C1 ', C1 "and a second laser unit C2 with different shapes from the first laser units C1, C1', C1".
Referring to fig. 12, the light emitting array 10 has a first laser unit C1 and a plurality of second laser units C2, such as but not limited to: the first laser unit C1 and the second laser unit C2 have different areas.
Referring to fig. 13, the light emitting array 10 has a plurality of first laser units C1, C1 ', C1 "and a plurality of second laser units C2 with different areas, which are different from the first laser units C1, C1', C1".
Referring to fig. 14A, a laser device 3 according to an embodiment of the present invention includes a plurality of light emitting arrays 10 arranged repeatedly, and the laser device 3 may include the light emitting arrays 10 shown in fig. 1, 8 to 13, for example, and is not limited to have only one kind of light emitting array, for example: the laser unit 5 includes the light emitting array 10 shown in fig. 1 and the light emitting array 10 shown in fig. 8, and two kinds of the light emitting arrays 10 may be arranged regularly or irregularly, periodically or non-periodically to form the laser element 1, and in another embodiment, the laser element 1 includes more than three different light emitting arrays 10. No matter the light emitting arrays 10 are regularly or irregularly arranged, the light with identification can be output by the laser units in each light emitting array 10. However, the light emitting arrays 10 regularly arranged on the laser element 1 have a high layout utilization rate, which can increase the number of light emitting arrays 10 per unit surface area, reduce the volume of the laser element 1, realize miniaturized design and packaging application, and reduce the production cost. In the embodiment where the laser element has a plurality of light emitting arrays arranged regularly and periodically, as shown in fig. 14B, the first laser units C1 are uniformly distributed in the whole laser element 4, i.e. the density of the first laser units C1 is uniform at the center and the edge of the laser element 4, thereby enabling the laser element 4 to generate a plurality of uniform identification points to improve the image recognition capability. In the present embodiment, the laser element 1 includes tens of light emitting arrays 10 or hundreds of laser units.
Referring to fig. 15, a laser device according to an embodiment of the invention includes a laser element 1, an optical array 81, a focusing mirror 82 and a circuit carrier 83, wherein the laser element 1 is disposed on the circuit carrier 83 and electrically connected to a first electrode pad 831 and a second electrode pad 832 of the circuit carrier 83, and in detail, the conductive structure 20 and the back conductive structure 30 (refer to fig. 2A) of the laser element 1 can be connected to the first electrode pad 831 and the second electrode pad 832 through a metal wire 84 and/or solder (not shown). The laser element 1, the optical array 81, the focusing mirror 82 and the circuit carrier 83 may be integrated in the bracket 9, the focusing mirror 82 is located between the laser element 1 and the optical array 81, a first elevating member 85 is disposed between the circuit carrier 83 and the focusing mirror 82, a second elevating member 86 is disposed between the focusing mirror 82 and the optical array 81, and the heights of the first and second elevating members 85, 86 may be designed according to the focal length requirement of the optical array 81. As described above, the optical array 81 includes a plurality of optical structures 811, and the plurality of optical structures 811 may be arranged regularly or randomly. In an embodiment, the laser device is formed by the laser element 1 and the optical array 81 having a plurality of regularly arranged optical structures 811, wherein the laser element 1 has a plurality of regularly arranged laser units, and the laser units include a first laser unit C1 and a second laser unit C2 with different geometric structures. In this embodiment, the laser units C1 and C2 with different structures can be used as reference positions, so that the laser device can achieve the effect of depth recognition, and the complexity and cost of manufacturing the optical array 81 can be reduced by the regularly arranged optical structures 811.
In summary, some embodiments of the present invention provide a laser device and a laser element, which have a plurality of laser units regularly arranged, so as to effectively increase the number of light emitting points per unit surface area, reduce the volume of a semiconductor chip, implement miniaturization design and packaging application, and reduce production cost; in addition, the plurality of regularly arranged laser units comprise at least one first laser unit C1 and at least one second laser unit C2 with different geometric structures so as to output different light shapes or/and brightness, which is beneficial to subsequent image identification and positioning, thereby realizing the effect of three-dimensional sensing.
The above-mentioned embodiments are merely illustrative of the technical spirit and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and to implement the invention, so as not to limit the scope of the present invention, i.e., all equivalent changes or modifications made in the spirit of the present invention should be covered by the scope of the present invention.
