阅读说明：本技术 一种半导体激光器阵列控制系统及其工作方法 (Semiconductor laser array control system and working method thereof ) 是由 孙舒娟 俞浩 王俊 周立 李泉灵 闵大勇 廖新胜 于 2021-11-15 设计创作，主要内容包括：本发明提供一种半导体激光器阵列控制系统及其工作方法,其中,半导体激光器阵列控制系统包括：热沉；半导体激光器阵列；焊料层；施压装置,位于半导体激光器阵列上；近场成像透镜、图像传感器和快轴准直透镜；施压判断单元；反馈结构,反馈结构适于在焊料层进行封装回流过程中采用施压装置对特征发光芯片施压,直至任意的第j-(1)发光芯片和第j-(2)发光芯片在快轴方向上的距离小于阈值。半导体激光器阵列控制系统有利于减小半导体激光器阵列在封装过程中因应力等因素造成的半导体激光器阵列的发光芯片在光学近场质心位置彼此之间的垂直偏移,有利于获得更好的光束质量和更高的耦合效率,有利于避免半导体激光器阵列在外腔锁定的应用中出现部分失锁问题。(The invention provides a semiconductor laser array control system and a working method thereof, wherein the semiconductor laser array control system comprises: a heat sink; an array of semiconductor lasers; a solder layer; the pressure applying device is positioned on the semiconductor laser array; the near-field imaging lens, the image sensor and the fast axis collimating lens; a pressure application judging unit; a feedback structure suitable for applying pressure to the characteristic light-emitting chip by a pressure applying device in the process of packaging and reflowing the solder layer until the arbitrary jth 1 Light emitting chip and jth 2 The distance of the light emitting chip in the fast axis direction is less thanAnd (4) a threshold value. The semiconductor laser array control system is beneficial to reducing the vertical deviation of the light emitting chips of the semiconductor laser array between the optical near-field centroid positions caused by factors such as stress in the packaging process of the semiconductor laser array, is beneficial to obtaining better light beam quality and higher coupling efficiency, and is beneficial to avoiding the partial unlocking problem of the semiconductor laser array in the application of external cavity locking.)

1. A semiconductor laser array control system, comprising:

a heat sink;

the semiconductor laser array is positioned on the heat sink and comprises a first light-emitting chip to a No light-emitting chip which are sequentially arranged, wherein D is an integer more than or equal to 2;

a solder layer located between the semiconductor laser array and the heat sink;

the pressure applying device is positioned on one side of the semiconductor laser array, which is far away from the heat sink;

the near-field imaging lens is suitable for transmitting light respectively emitted by a first light emitting chip to a No. D light emitting chip on the image sensor so that the image sensor displays a near-field light spot image, the near-field light spot image comprises a first light emitting area to a No. D light emitting area, the No. j light emitting area corresponds to the No. j light emitting chip, and j is an integer which is more than or equal to 1 and less than or equal to D;

the pressing judging unit is suitable for acquiring a characteristic light emitting area from a first light emitting area to a No. D light emitting area and acquiring a characteristic light emitting chip to be applied from a first light emitting chip to a No. D light emitting chip according to the characteristic light emitting area, and the characteristic light emitting area has a maximum value mass center;

the feedback structure is suitable for applying pressure to the characteristic light-emitting chip by adopting the pressure applying device in the process of packaging and reflowing the solder layer until the jth characteristic light-emitting chip is optionally pressed₁Light emitting chip and jth₂The distance of the light emitting chip in the fast axis direction is less than a threshold value j₁Is an integer of 1 or more and D or less, j₂Is an integer of 1 or more and D or less, and j₁Is not equal to j₂。

2. The semiconductor laser array control system of claim 1, wherein the pressure applicator further comprises: first to Mth pressing members, the Mth pressing member being adapted to give the d-th pressing member₁Light emitting chip to d₂The light emitting chip applies pressure, M is an integer greater than or equal to 1 and less than or equal to M, d₁Is an integer of 1 or more and D or less, D₂Is an integer of 1 to D, M is an integer of 2 to D, and D₂Greater than d₁。

3. The semiconductor laser array control system of claim 1, wherein the near-field imaging lens comprises a first imaging lens and a second imaging lens, the first imaging lens and the fast-axis collimating lens are adapted to collectively present a near-field image in a fast axis, and the second imaging lens and the first imaging lens are adapted to collectively present a near-field image in a slow axis.

4. The semiconductor laser array control system of claim 3, wherein the first imaging lens is a round lens and the second imaging lens is a cylindrical lens.

5. The semiconductor laser array control system of claim 1, wherein the image sensor comprises a CCD camera.

6. The semiconductor laser array control system of claim 1, further comprising: and the light attenuation sheet is positioned in a light path between the fast axis collimating lens and the image sensor.

7. The semiconductor laser array control system of claim 2, further comprising: the conductive pressing block is positioned on one side of the semiconductor laser array, which is far away from the heat sink;

the conductive pressing block is provided with a plurality of openings penetrating through the conductive pressing block; the first pressing member to the Mth pressing member respectively pass through the openings.

8. A method of operating a semiconductor laser array control system as claimed in any one of claims 1 to 7, comprising:

the near-field imaging lens transmits light emitted by the first light-emitting chip to the No. D light-emitting chip to the image sensor so that the image sensor displays a near-field light spot image, wherein the near-field light spot image comprises a first light-emitting area to a No. D light-emitting area;

the pressure application judging unit acquires a characteristic light emitting area from the first light emitting area to the D-th light emitting area, and acquires a characteristic light emitting chip to be applied from the first light emitting chip to the D-th light emitting chip according to the characteristic light emitting area, wherein the characteristic light emitting area has a maximum value mass center;

in the process of packaging and reflowing the solder layer, the feedback structure applies pressure to the characteristic light-emitting chip by adopting a pressure applying device until the jth chip is arbitrarily positioned₁Light emitting chip and jth₂The distance of the light emitting chip in the fast axis direction is less than a threshold value j₁Is an integer of 1 or more and D or less, j₂Is an integer of 1 or more and D or less, and j₁Is not equal to j₂。

9. A method of operating a semiconductor laser array control system as claimed in claim 8, further comprising: and applying discontinuous current to the semiconductor laser array in the process of packaging and reflowing the solder layer, wherein the discontinuous current is used for enabling the semiconductor laser array to emit light in a staged manner.

10. The method of operating a semiconductor laser array control system of claim 8, wherein the j-th order₁Ordinate D of the centroid of the luminous zone_j1J th₂Ordinate D of the centroid of the luminous zone_j2Focal length f of fast axis collimating lens_FACFast axis focal length f of near field imaging lens_aAnd the longitudinal dimension h of each pixel on the near-field light spot image to obtain the jth₁Light emitting chip and jth₂Distance Smile (j) of light emitting chip in fast axis direction₁，j₂）：

Smile(j₁,j₂)=h*|D_j1- D_j2|*f_FAC/f_a。

11. A method of operating a semiconductor laser array control system as claimed in claim 8 wherein the threshold value is 1 μm.

12. The method of claim 8, wherein the package reflow process includes a temperature rise process, a temperature hold process after the temperature rise process, and a temperature drop process after the temperature hold process;

the pressure applying device applies pressure to the characteristic light-emitting chip in the temperature rising process and the heat preservation process until the arbitrary jth₁Light emitting chip and jth₂The distance of the light-emitting chip in the fast axis direction is smaller than a threshold value; when the arbitrary j is₁Light emitting chip and jth₂And after the distance of the light-emitting chip in the fast axis direction is smaller than the threshold value, performing the cooling process to solidify the solder layer.

Technical Field

The invention relates to the technical field of semiconductors, in particular to a semiconductor laser array control system and a working method thereof.

Background

The semiconductor laser is widely used due to its characteristics of wide wavelength range, high efficiency, compact structure, etc., and is commonly used for pumping of solid lasers, alkali metal lasers, etc., and also can be used for direct semiconductor laser systems of grating external cavity spectrum beam combination. However, the conventional semiconductor laser has poor beam quality and spectral characteristics, and low direct output power and brightness. In order to enrich the applications of semiconductor laser pumps, especially alkali metal laser pumps, etc., the output light beams of the semiconductor laser are required to have the characteristic of narrow line width. When the outer cavity is locked, the semiconductor laser array is usually required to be collimated in the fast axis direction first, a feedback structure is arranged on a light path after the collimation in the fast axis direction, and observation and monitoring are carried out on a locking effect through a spectrometer. However, due to the reasons of package stress, the Smile effect exists, that is, the light emitting points on the array strips have vertical offset between the optical near-field centroid positions, the relative offset of the vertical positions of the light emitting points causes the pointing deviation of the light beam in the Fast Axis (FA) direction after the light beam is collimated by the fast axis collimating lens (FAC), which causes the residual divergence angle after collimation to be large, the focused light spot to be large and affects the energy density of the pump light, especially in the alkali metal laser pump, not only higher energy density is required, but also the output light beam of the semiconductor laser is required to have the characteristics of narrow line width and narrow line width pressure, the commonly used body bragg grating (VBG) is used as a reflection cavity mirror to form an external cavity laser with the high power semiconductor laser, and the VBG as an external cavity reflector has the characteristic of angle selection, when the light emitting point cannot vertically enter the VBG, the feedback light can not return to the cavity surface to cause the light-emitting points to be unlocked, so that all the light-emitting points in the array can not be locked simultaneously due to the existence of the Smile effect, the output spectrum monitored by the spectrometer finally has side lobes to cause the pumping efficiency to be reduced, and in the beam combination of the grating external cavity semiconductor laser, the quality of the combined beam is poor due to the fact that the array light-emitting points can not be completely locked, the coupling efficiency is poor, and a large amount of waste heat is generated.

Disclosure of Invention

Therefore, the technical problem to be solved by the present invention is to solve the problem of partial unlocking of a semiconductor laser array in an external cavity locking application in the prior art, thereby providing a semiconductor laser array control system and an operating method thereof.

The invention provides a semiconductor laser array control system, comprising: a heat sink; the semiconductor laser array is positioned on the heat sink and comprises a first light-emitting chip to a No light-emitting chip which are sequentially arranged, wherein D is an integer more than or equal to 2; the solder layer is positioned between the semiconductor laser array and the heat sink; the pressure applying device is positioned on one side of the semiconductor laser array, which is far away from the heat sink; the near-field imaging lens is suitable for transmitting light respectively emitted by the first light-emitting chip to the D-th light-emitting chip on the image sensor so as to enable the image to be displayedThe image sensor displays a near-field light spot image, wherein the near-field light spot image comprises a first light emitting area to a Dth light emitting area, the jth light emitting area corresponds to the jth light emitting chip, and j is an integer which is greater than or equal to 1 and less than or equal to D; the pressing judging unit is suitable for acquiring a characteristic light emitting area from a first light emitting area to a No. D light emitting area and acquiring a characteristic light emitting chip to be applied from a first light emitting chip to a No. D light emitting chip according to the characteristic light emitting area, and the characteristic light emitting area has a maximum value mass center; the feedback structure is suitable for applying pressure to the characteristic light-emitting chip by adopting the pressure applying device in the process of packaging and reflowing the solder layer until the jth characteristic light-emitting chip is optionally pressed₁Light emitting chip and jth₂The distance of the light emitting chip in the fast axis direction is less than a threshold value j₁Is an integer of 1 or more and D or less, j₂Is an integer of 1 or more and D or less, and j₁Is not equal to j₂。

Optionally, the pressing device further includes: first to Mth pressing members, the Mth pressing member being adapted to give the d-th pressing member₁Light emitting chip to d₂The light emitting chip applies pressure, M is an integer greater than or equal to 1 and less than or equal to M, d₁Is an integer of 1 or more and D or less, D₂Is an integer of 1 to D, M is an integer of 2 to D, and D₂Greater than d₁。

Optionally, the near-field imaging lens includes a first imaging lens and a second imaging lens, the first imaging lens and the fast-axis collimating lens are adapted to form a near-field image together on the fast axis, and the second imaging lens and the first imaging lens are adapted to form a near-field image together on the slow axis.

Optionally, the first imaging lens is a circular lens, and the second imaging lens is a cylindrical lens.

Optionally, the image sensor comprises a CCD camera.

Optionally, the method further includes: and the light attenuation sheet is positioned in a light path between the fast axis collimating lens and the image sensor.

Optionally, the method further includes: the conductive pressing block is positioned on one side of the semiconductor laser array, which is far away from the heat sink; the conductive pressing block is provided with a plurality of openings penetrating through the conductive pressing block; the first pressing member to the Mth pressing member respectively pass through the openings.

According to the semiconductor laser array control system described above, the present invention also provides an operating method of a semiconductor laser array control system, including: the near-field imaging lens transmits light emitted by the first light-emitting chip to the No. D light-emitting chip to the image sensor so that the image sensor displays a near-field light spot image, wherein the near-field light spot image comprises a first light-emitting area to a No. D light-emitting area; the pressure application judging unit acquires a characteristic light emitting area from the first light emitting area to the D-th light emitting area, and acquires a characteristic light emitting chip to be applied from the first light emitting chip to the D-th light emitting chip according to the characteristic light emitting area, wherein the characteristic light emitting area has a maximum value mass center; in the process of packaging and reflowing the solder layer, the feedback structure applies pressure to the characteristic light-emitting chip by adopting a pressure applying device until the jth chip is arbitrarily positioned₁Light emitting chip and jth₂The distance of the light emitting chip in the fast axis direction is less than a threshold value j₁An integer of 1 or more and D or less, j₂Is an integer of 1 or more and D or less, and j₁Is not equal to j₂。

Optionally, the method further includes: and applying discontinuous current to the semiconductor laser array in the process of packaging and reflowing the solder layer, wherein the discontinuous current is used for enabling the semiconductor laser array to emit light in a staged manner.

Optionally, according to item j₁Ordinate D of the centroid of the luminous zone_j1J th₂Ordinate D of the centroid of the luminous zone_j2Focal length f of fast axis collimating lens_FACFast axis focal length f of near field imaging lens_aAnd the longitudinal dimension h of each pixel on the near-field light spot image to obtain the jth₁Light emitting chip and jth₂Distance Smile (j) of light emitting chip in fast axis direction₁，j₂）：

Smile(j₁,j₂)=h*|D_j1- D_j2|*f_FAC/f_a。

Optionally, the threshold is 1 μm.

Optionally, the package reflow process includes a temperature rise process, a heat preservation process after the temperature rise process, and a temperature reduction process after the heat preservation process; the pressure applying device applies pressure to the characteristic light-emitting chip in the temperature rising process and the heat preservation process until the arbitrary jth₁Light emitting chip and jth₂The distance of the light-emitting chip in the fast axis direction is smaller than a threshold value; when the arbitrary j is₁Light emitting chip and jth₂And after the distance of the light-emitting chip in the fast axis direction is smaller than the threshold value, performing the cooling process to solidify the solder layer.

The technical scheme of the invention has the following beneficial effects:

in the working method of the semiconductor laser array control system in the technical scheme of the invention, the near-field imaging lens transmits the light respectively emitted by the first light-emitting chip to the D-th light-emitting chip to the image sensor so that the image sensor displays a near-field light spot image, wherein the near-field light spot image comprises a first light-emitting area to a D-th light-emitting area; the pressure judging unit acquires a characteristic light emitting area from the first light emitting area to the D-th light emitting area and acquires a characteristic light emitting chip required to be applied according to the characteristic light emitting area, wherein the characteristic light emitting area has a maximum value mass center; in the process of packaging and reflowing the solder layer, the feedback structure applies pressure to the characteristic light-emitting chip by adopting a pressure applying device until the jth chip is arbitrarily positioned₁Light emitting chip and jth₂The distance between the light emitting chips in the fast axis direction is less than the threshold value, so as to the j₁Light emitting chip and jth₂The distance of the light-emitting chip in the fast axis direction is controlled, so that the vertical offset of the light-emitting chip in the optical near-field centroid position in the array caused by factors such as stress in the packaging process of the semiconductor laser array is favorably reduced, better light beam quality and higher coupling efficiency are favorably obtained, and the problem of partial unlocking of the semiconductor laser array in the application of external cavity locking is favorably avoided.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic structural diagram of a semiconductor laser array control system according to the present invention;

fig. 2 is a schematic partial structural diagram of a semiconductor laser array control system according to the present invention;

fig. 3, 4 and 5 are imaging diagrams of a pressing device without using the semiconductor laser array control system provided by the present invention;

FIG. 6 is an imaging diagram of a semiconductor laser array control system using the present invention;

fig. 7 is a flowchart of a method for operating a semiconductor laser array control system according to the present invention.

Detailed Description

The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

The present invention provides a semiconductor laser array control system, please refer to fig. 1, which includes:

a heat sink 1;

the semiconductor laser array 2 is positioned on the heat sink 1; the semiconductor laser array 2 comprises a first light-emitting chip to a No light-emitting chip which are sequentially arranged, wherein D is an integer more than or equal to 2;

a solder layer (not shown) between the semiconductor laser array 2 and the heat sink 1;

the pressure applying device 3 is positioned on one side of the semiconductor laser array, which is far away from the heat sink;

the near-field imaging lens 4 is positioned between the semiconductor laser array 2 and the near-field imaging lens 4, the near-field imaging lens 4 is suitable for transmitting at least part of light emitted by the first light emitting chip to the No. D light emitting chip on the image sensor 5, so that the image sensor 5 displays a near-field light spot image, the near-field light spot image comprises a first light emitting area to a No. D light emitting area, the No. j light emitting area corresponds to the No. j light emitting chip, and j is an integer greater than or equal to 1 and less than or equal to D;

the pressing judging unit 7 is suitable for acquiring a characteristic light emitting region from the first light emitting region to the D-th light emitting region and acquiring a characteristic light emitting chip required to be applied according to the characteristic light emitting region, and the characteristic light emitting region has a maximum value mass center;

a feedback structure suitable for applying pressure to the characteristic light-emitting chip by using a pressure applying device 3 in the packaging and reflowing process of the solder layer until the arbitrary jth₁Light emitting chip and jth₂The distance of the light emitting chip in the fast axis direction is less than a threshold value j₁Is an integer of 1 or more and D or less, j₂Is an integer of 1 or more and D or less, and j₁Is not equal to j₂。

Specifically, the semiconductor laser array 2 is placed on the heat sink 1 in an aligned manner, and the anode of the semiconductor laser array 2 is downward in contact with the solder layer.

The light beam emitted by the semiconductor laser array 2 reaches the fast axis collimating lens 6 and is collimated in the fast axis direction of the fast axis collimating lens 6.

The solder layer is used for welding the heat sink 1 and the semiconductor laser array 2.

In this embodiment, the pressing device 3 further includes: first to Mth pressing members, the Mth pressing member being adapted to give the d-th pressing member₁Light emitting chip to d₂The light emitting chip applies pressure, M is an integer greater than or equal to 1 and less than or equal to M, d₁Is an integer of 1 or more and D or less, D₂Is an integer of 1 to D, M is an integer of 2 to D, and D₂Greater than d₁。

In one embodiment, d₂And d₁Is less than or equal to 4, such as 3, 2, or 1. Has the advantages that: if d is₂And d₁If the difference value is too large, the light-emitting chips nearby are driven to be too many during pressure application, so that control is not facilitated; if d is₂And d₁If the difference is too small, the required pressing member has a small size, which increases the difficulty of the manufacturing process.

In this embodiment, the near-field imaging lens 4 includes a first imaging lens and a second imaging lens, the first imaging lens and the fast-axis collimating lens 6 are adapted to form a near-field image together on the fast axis, and the second imaging lens and the first imaging lens are adapted to form a near-field image together on the slow axis. In one embodiment, the first imaging lens is a round lens and the second imaging lens is a cylindrical lens. The second imaging lens is located between the first imaging lens and the image sensor 5.

The image sensor 5 comprises a CCD camera.

The semiconductor laser array control system further includes: and the light attenuation sheet 8, wherein the light attenuation sheet 8 is positioned in the light path between the fast axis collimating lens 6 and the image sensor 5.

In this embodiment, the light attenuation sheet 8 is located in the optical path between the near-field imaging lens 4 and the fast-axis collimating lens 6.

In other embodiments, the light attenuation sheet 8 may also be located in the optical path between the near field imaging lens 4 and the image sensor 5.

The light attenuation sheet 8 is used for attenuating strong light of the semiconductor laser array 2, and damage to the image sensor 5 caused by direct incidence of high-strength laser light on the image sensor 5 is avoided.

Specifically, the light beam emitted from the fast axis collimating lens 6 reaches the near field imaging lens 4 through the light attenuation sheet 8 and forms an array of near field light spot images on the image sensor 5 through the near field imaging lens 4.

The semiconductor laser array control system further includes: the conductive pressing block 9 is positioned on one side, away from the heat sink 1, of the semiconductor laser array 2; the conductive pressing block 9 is provided with a plurality of openings penetrating through the conductive pressing block 9; the first pressing member to the Mth pressing member respectively pass through the openings.

Specifically, conducting press block 9 with semiconductor laser array 2's negative pole contact, conducting press block 9 has certain weight and also requires to have higher roughness simultaneously, conducting press block 9 is right semiconductor laser array 2 applys pressure, and pressure makes semiconductor laser array 2's positive pole with the solder layer contact thereby with heat sink 1 electricity leads to, and this pressure also can be with semiconductor laser array 2 is preliminary pressed smoothly simultaneously.

The conductive pressing blocks 9 are respectively arranged at intervals from the first pressing member to the Mth pressing member.

For the first to mth pressing members, the mth pressing member includes an mth pressing member main body and an mth pressing member top plate, the mth pressing member main body is located in the opening of the conductive pressing block 9, and the mth pressing member top plate is located on the conductive pressing block 9 and is fixedly connected with the mth pressing member main body.

In this embodiment, the semiconductor laser array control system can effectively improve the power density of the semiconductor laser array when serving as a pump source, and can realize the locking of a full light emitting point when the semiconductor laser array performs external cavity locking, thereby being beneficial to controlling the spectrum of the semiconductor laser and expanding the application of the semiconductor laser array.

The invention further provides a working method of the semiconductor laser array control system, which adopts the semiconductor laser array control system of the above embodiment, and with reference to fig. 7, the working method includes:

step S1: the near-field imaging lens transmits light emitted by the first light-emitting chip to the No. D light-emitting chip to the image sensor so that the image sensor displays a near-field light spot image, wherein the near-field light spot image comprises a first light-emitting area to a No. D light-emitting area;

step S2: the pressure application judging unit acquires a characteristic light emitting area from the first light emitting area to the D-th light emitting area, and acquires a characteristic light emitting chip to be applied from the first light emitting chip to the D-th light emitting chip according to the characteristic light emitting area, wherein the characteristic light emitting area has a maximum value mass center;

step S3: in the process of packaging and reflowing the solder layer, the feedback structure applies pressure to the characteristic light-emitting chip by adopting a pressure applying device until the jth chip is arbitrarily positioned₁Light emitting chip and jth₂The distance of the light emitting chip in the fast axis direction is less than a threshold value j₁Is an integer of 1 or more and D or less, j₂Is an integer of 1 or more and D or less, and j₁Is not equal to j₂。

In step S1, specifically, light emitted by the first to the D-th light-emitting chips passes through the fast axis collimating lens 6, the fast axis collimating lens 6 collimates the light emitted by the first to the D-th light-emitting chips in the fast axis direction, and the collimated light by the fast axis collimating lens 6 enters the image sensor 5 through the near-field imaging lens 4. When the attenuation sheet 8 is arranged, light on a light path from the fast axis collimating lens 6 to the image sensor 5 is attenuated through the attenuation sheet 8, so that the light intensity incident to the image sensor 5 is weakened, and the image sensor 5 is prevented from being damaged.

In this embodiment, referring to fig. 3 to 5, the near-field imaging lens 4 transmits the light emitted by the first to the D-th light-emitting chips on the image sensor 5, so that the image sensor 5 displays a near-field light spot image, where the near-field light spot image includes a first to a D-th light-emitting areas. Taking D equal to 19 as an example, the near-field spot image includes first to 19 th light emitting areas. In other embodiments, D may be other values, and is not limited.

In step S2, specifically, the pressure application determination unit 7 obtains centroids of the first to D-th light emitting areas, finds a maximum centroid of the centroids of the first to D-th light emitting areas, uses a light emitting area having the maximum centroid of the first to D-th light emitting areas as a characteristic light emitting area, and uses a light emitting chip corresponding to the characteristic light emitting area as a characteristic light emitting chip. The light emitting chip corresponding to the characteristic light emitting region refers to: the area where light emitted by the characteristic light emitting region is imaged on the image sensor is the characteristic light emitting region.

In one embodiment, referring to fig. 3, the pressure determination unit 7 obtains centroids of the first to 19 th light emitting regions, finds that the first and 19 th light emitting regions have maximum centroids, and the first and 19 th light emitting regions are characteristic light emitting regions, and accordingly, the first and 19 th light emitting chips are characteristic light emitting chips.

In another embodiment, referring to fig. 4, the pressing determination unit 7 obtains centroids of the first to 19 th light emitting regions, finds that the 11 th light emitting region has a maximum centroid, the 11 th light emitting region is used as a characteristic light emitting region, and accordingly, the 11 th light emitting chip is used as a characteristic light emitting chip.

In another embodiment, referring to fig. 5, the pressure determination unit 7 obtains centroids of the first to 19 th light emitting regions, finds that the first and 15 th light emitting regions have maximum centroids, and uses the first and 15 th light emitting regions as characteristic light emitting regions, and accordingly, uses the first and 15 th light emitting chips as characteristic light emitting chips.

In step S3, in the process of reflowing the solder layer, the feedback structure applies pressure to the characteristic light emitting chip by using the pressure applying device, and in the process of applying pressure, the change of the centroid position from the first light emitting area to the D-th light emitting area in the image sensor 5 is monitored, and any jth light emitting area is obtained according to the change of the centroid position from the first light emitting area to the D-th light emitting area₁Light emitting chip and jth₂The distance of the light-emitting chip in the fast axis direction changes until any j₁Light emitting chip and jth₂The distance of the light emitting chip in the fast axis direction is smaller than the threshold value.

The characteristic light-emitting chip is pressed, and only the characteristic light-emitting chip is pressed; the characteristic light-emitting chip can be pressed and driven by the light-emitting chip near the characteristic light-emitting chip.

In one embodiment, referring to fig. 3, during the reflow process of the package for the solder layer, the feedback structure applies pressure to the first light emitting chip and the 19 th light emitting chip by using a pressure applying device, and the change of the centroid position from the first light emitting area to the 19 th light emitting area in the image sensor 5 is monitored during the pressure application.

In one embodiment, referring to fig. 4, during the reflow process of the package for the solder layer, the feedback structure applies pressure to the 11 th light emitting chip by using a pressure applying device, and the change of the centroid position from the first light emitting region to the 19 th light emitting region in the image sensor 5 is monitored during the pressure application.

In one embodiment, referring to fig. 5, during the reflow process of the package on the solder layer, the feedback structure applies pressure to the first light emitting chip and the 15 th light emitting chip by using a pressure applying device, and the change of the centroid position from the first light emitting area to the 19 th light emitting area in the image sensor 5 is monitored during the pressure application.

Referring to fig. 6, fig. 6 is an imaging diagram of a semiconductor laser array control system provided by the present invention.

The working method of the semiconductor laser array control system further comprises the following steps: applying intermittent current to the semiconductor laser array 2 during the process of packaging and reflowing the solder layer, wherein the intermittent current is used for making the semiconductor laser array 2 emit light in stages.

Specifically, the intermittent current may enable better heat dissipation of the semiconductor laser array 2, preventing the semiconductor laser array 2 from burning out, the intermittent current including a pulse current.

The working method of the semiconductor laser array control system further comprises the following steps: according to j₁Ordinate D of the centroid of the luminous zone_j1J th₂Ordinate D of the centroid of the luminous zone_j2Focal length f of fast axis collimating lens_FACFast axis focal length f of near field imaging lens_aAnd the longitudinal dimension h of each pixel on the near-field light spot image to obtain the jth₁Light emitting chip and jth₂Distance Smile (j) of light emitting chip in fast axis direction₁，j₂）：Smile(j₁,j₂)=h*|D_j1- D_j2|*f_FAC/f_a。

In one embodiment, the threshold is 1 μm. In other embodiments, the threshold may be other values, and is not limited.

In particular, any jth of the image sensors 5 is monitored during the pressing process₁Light emitting chip and jth₂The distance of the light emitting chip in the fast axis direction to any jth₁Light emitting chip and jth₂The distance of the light emitting chips in the fast axis direction is less than 1 μm.

The working method of the semiconductor laser array control system further comprises the following steps: the package reflow process comprises a temperature rise process, a heat preservation process after the temperature rise process, anda temperature reduction process after heat preservation; the pressure applying device applies pressure to the characteristic light-emitting chip in the temperature rising process and the heat preservation process until the arbitrary jth₁Light emitting chip and jth₂The distance of the light-emitting chip in the fast axis direction is smaller than a threshold value; when the arbitrary j is₁Light emitting chip and jth₂And after the distance of the light-emitting chip in the fast axis direction is smaller than the threshold value, the cooling process is carried out to solidify the solder layer.

Specifically, the heat sink 1, the semiconductor laser array 2, the conductive pressing block 9 and the pressing device 3 are placed in a reflow furnace, the temperature is raised to melt the solder layer, and after the solder layer is melted, the semiconductor laser array 2 and the solder layer are in full contact until the arbitrary jth spot image is acquired through the near-field spot image₁Light emitting chip and jth₂Starting a cooling process after the distance of the light-emitting chip in the fast axis direction is less than 1 mu m, and monitoring any jth pixel in real time in the heating and heat-preserving process₁Light emitting chip and jth₂And the distance of the light-emitting chip in the fast axis direction is fed back to the pressure applying device 3 to adjust the pressure of the pressure applying device 3, so that feedback closed-loop adjustment is realized, and after the solder layer is solidified, the semiconductor laser array 2 and the heat sink 1 are welded.

It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.