阅读说明：本技术 一种非水冷的半导体激光巴条封装结构 (Non-water-cooled semiconductor laser bar packaging structure ) 是由 林涛 孙婉君 穆研 李亚宁 解佳男 于 2021-08-26 设计创作，主要内容包括：本发明公开了一种非水冷的半导体激光巴条封装结构,半导体激光巴条芯片的P面朝下与主热沉左端上表面通过焊料层焊接固定,所述半导体激光巴条芯片的N面与下散热热沉下表面通过焊料层焊接固定,所述半导体激光巴条芯片的P面焊接上散热热沉,构成三明治结构；所述三明治结构为P面焊接上散热热沉、N面分别焊接下散热热沉形成的三层结构,当所需半导体激光巴条芯片为2-3个时,直接将第一个三明治结构中的上散热热沉上焊接芯片P面朝下的上散热热沉,从而依次增加半导体激光器巴条个数。将半导体激光芯片焊接在主热沉和下散热热沉之间,使N面也有了高效的散热能力,还增加了背面散热方式,有效降低了器件的工作温度,提高寿命。(The invention discloses a non-water-cooled semiconductor laser bar packaging structure.A P surface of a semiconductor laser bar chip is downward and is welded and fixed with the upper surface of the left end of a main heat sink through a solder layer; the sandwich structure is a three-layer structure formed by welding an upper heat dissipation heat sink on a P surface and respectively welding a lower heat dissipation heat sink on an N surface, and when 2-3 semiconductor laser bar chips are needed, the P surface of the upper heat dissipation heat sink in the first sandwich structure is directly welded with the upper heat dissipation heat sink with the P surface facing downwards, so that the number of the semiconductor laser bar is sequentially increased. The semiconductor laser chip is welded between the main heat sink and the lower heat sink, so that the N surface has high-efficiency heat dissipation capacity, a back surface heat dissipation mode is added, the working temperature of the device is effectively reduced, and the service life is prolonged.)

1. A non-water-cooled semiconductor laser batten packaging structure comprises a main heat sink (1), a solder layer (2), a semiconductor laser batten chip (3), an upper heat dissipation heat sink (4), a lower heat dissipation heat sink (5), an N-face negative electrode plate (6), a back insulating layer (7), an electrode isolation layer (8), a back heat dissipation heat sink (9), a sandwich structure (11) and an air-cooled heat dissipation groove (12), and is characterized in that the P face of the semiconductor laser batten chip (3) faces downwards and is welded and fixed with the upper surface of the left end of the main heat sink (1) through the solder layer (2), the N face of the semiconductor laser batten chip (3) and the lower surface of the lower heat dissipation heat sink (5) are welded and fixed through the solder layer (2), and the P face of the semiconductor laser batten chip (3) is welded with the upper heat dissipation heat sink (4) to form the sandwich structure (10); the lower surface of the left end of the N-surface negative electrode plate (6) is fixedly connected with the lower heat sink (5) of the uppermost layer, and the right end of the N-surface negative electrode plate (6) is fixedly connected with the electrode isolation layer (8); the main heat sink (1) is cut into air-cooled heat dissipation grooves (12) with different densities at the front and the rear; the back heat dissipation heat sink (9) is arranged at the position of the rear cavity of the packaged semiconductor laser bar chip (3); the left surface of the back insulating layer (7) is fixedly connected with the back of the sandwich structure (10), and the right surface of the back insulating layer (7) is fixedly connected with a back heat sink (9); the upper surface of the electrode isolation layer (8) is connected with a back heat-dissipation heat sink (9) and an N-surface negative electrode plate (6), and the lower surface of the electrode isolation layer (8) is fixedly connected with a main heat sink (1);

sandwich structure (10) are P face welding go up heat dissipation heat sink (4), N face welds the three layer construction that heat dissipation heat sink (5) formed down respectively, when required semiconductor laser bar chip (3) is 2-3, directly with welding chip P face down last heat dissipation heat sink (4) on last heat dissipation heat sink (4) in first sandwich structure (10) to increase semiconductor laser bar number in proper order.

2. The non-water-cooled semiconductor laser bar packaging structure according to claim 1, wherein the number of packaged semiconductor laser bar chips (3) is 2-3, and the sandwich structures (11) are fixedly welded by using AuSn solders.

3. The non-water-cooled semiconductor laser bar package structure according to claim 1, wherein the thickness of the back insulating layer (7) is 0.3-0.5 mm.

4. The non-water-cooled semiconductor laser bar packaging structure according to claim 1, wherein the back heat sink (9) is fixedly welded with the back insulating layer (7) by using In solder on the back surface of the semiconductor laser bar chip (3).

5. The non-water-cooled semiconductor laser bar packaging structure according to claim 1, wherein the left end of the N-face negative electrode plate (6) is thinner than the right end, the left end is welded on the lower heat dissipation heat sink (5) through In solder, and the right end is welded on the electrode isolation layer (8) through In solder, so as to provide negative electricity for the semiconductor laser bar chip (3); the main heat sink (1) is led out of a positive electrode to positively charge the semiconductor laser bar chip (3) so that the semiconductor laser bar chip can normally work.

6. The non-water-cooled semiconductor laser bar packaging structure according to claim 1, wherein the main heat sink (1) has a rectangular structure and four corners thereof are provided with mounting screw holes (10).

Technical Field

The invention relates to the technical field of semiconductor lasers, in particular to a non-water-cooling semiconductor laser bar packaging structure.

Background

Semiconductor lasers are photoelectric devices with great development potential in the laser industry and are widely applied in the fields of industry, military, medical treatment and the like. With the increasing requirements of the application field on the photoelectric performance of the semiconductor laser, the development of higher power semiconductor laser chips and packaging structures is an inevitable way for current development. However, as the power of the semiconductor laser is continuously increased, the generated heat will be continuously increased, resulting in a serious increase in the junction temperature of the device. The increase of the junction temperature of the semiconductor laser can reduce the photoelectric conversion efficiency and power of the device, increase the threshold current, red shift the wavelength and other problems, and the performance and the service life of the device are seriously influenced. The semiconductor laser bar chip is used as a core component of the high-power semiconductor laser stacked array module, and the reliability and the service life of the semiconductor laser are directly influenced by the packaging structure of the semiconductor laser bar chip. The semiconductor laser bar chip packaging technology is a key technology for the development of high-power semiconductor lasers.

For a high-power stacked array module consisting of a plurality of laser bars, the high output power has extremely strict requirements on heat dissipation, a micro-channel or macro-channel water cooling mode is required for heat dissipation, and an application system is required to be provided with a water cooling unit, so that the portability of some simple use occasions is influenced. For a single bar, considering the complexity and manufacturing cost of the system, a non-water-cooling conduction cooling module product is also adopted, but for the traditional non-water-cooling laser bar packaging structure at present, an alloy wire needs to be built on the N surface of a laser bar chip, so that the alloy wire is led to a negative electrode, and the semiconductor laser works normally. When the alloy wire is bonded by the packaging process, the gold wire for normal work of the semiconductor laser bar chip needs to bear large current, and usually 100 gold wires and 200 gold wires need to be bonded, so that the manufacturing process is complicated and the cost is high; and the N surface of the chip of the packaging structure is not provided with a heat sink, only bottom heat dissipation is carried out, and the heat dissipation effect path is few.

Disclosure of Invention

Technical problem to be solved

Aiming at the defects of the prior art, the invention provides a non-water-cooling semiconductor laser bar packaging structure. For a semiconductor laser module consisting of a few (1-3) bars, the non-water-cooling semiconductor laser bar packaging structure provided by the invention has the advantages that the N surface does not need to be bonded, the P surface and the N surface are both made by adopting sintering work, and the N surface is directly conducted by adopting a heat sink, so that the N surface also has high-efficiency heat dissipation capacity, and meanwhile, a back heat dissipation path is increased. When the number of the packaging bars is 2-3, the characteristics of the laser can be better exerted only by adding an air cooling unit in the module application system. The problems that the packaging process of the semiconductor laser module consisting of a few (1-3) bars is complex, the cost is high, the heat dissipation capability is low and the like are solved.

(II) technical scheme

In order to achieve the purpose, the invention provides the following technical scheme: a non-water-cooled semiconductor laser batten packaging structure comprises a main heat sink, a solder layer, a semiconductor laser batten chip, an upper heat dissipation heat sink, a lower heat dissipation heat sink, an N-surface negative electrode plate, a back insulating layer, an electrode isolation layer, a back heat dissipation heat sink, a sandwich structure and an air-cooled heat dissipation groove, wherein the P surface of the semiconductor laser batten chip is downwards welded and fixed with the upper surface of the left end of the main heat sink through the solder layer, the N surface of the semiconductor laser batten chip is welded and fixed with the lower surface of the lower heat dissipation heat sink through the solder layer, and the P surface of the semiconductor laser batten chip is welded with the upper heat dissipation heat sink to form the sandwich structure; the lower surface of the left end of the N-surface negative electrode piece is fixedly connected with the lower heat sink of the uppermost layer, and the right end of the N-surface negative electrode piece is fixedly connected with the electrode isolation layer; the main heat sink is cut into air-cooled heat dissipation grooves with different densities at the front and the rear; the back heat dissipation heat sink is arranged at the position of the rear cavity of the packaged semiconductor laser bar chip; the left surface of the back insulating layer is fixedly connected with the back of the sandwich structure, and the right surface of the back insulating layer is fixedly connected with the back heat-dissipation heat sink; the upper surface of the electrode isolation layer is connected with the back heat sink and the N-surface negative electrode plate, and the lower surface of the electrode isolation layer is fixedly connected with the main heat sink;

the sandwich structure is a three-layer structure formed by welding an upper heat dissipation heat sink on a P surface and respectively welding a lower heat dissipation heat sink on an N surface, and when 2-3 semiconductor laser bar chips are needed, the P surface of the upper heat dissipation heat sink in the first sandwich structure is directly welded with the upper heat dissipation heat sink with the P surface facing downwards, so that the number of the semiconductor laser bar is sequentially increased.

Preferably, the number of the packaged semiconductor laser bar chips is 2-3, and the sandwich structures are fixedly welded by using AuSn solders.

Preferably, the thickness of the back insulating layer is 0.3-0.5 mm. The back insulating layer is placed at the rear end of the semiconductor laser bar chip and used for isolating the positive electrode and the negative electrode and carrying out back heat dissipation, and the electrode isolation layer is used for isolating the main heat sink, the back heat sink and the N-surface negative electrode plate and preventing the semiconductor laser bar chip from being short-circuited.

Preferably, the back heat-dissipation heat sink is fixedly welded with the back insulating layer at the back of the semiconductor laser bar chip by using In solder, and a back heat-dissipation mode is introduced into the back heat-dissipation heat sink, so that a heat-dissipation path is widened, and a heat-dissipation effect is effectively improved. For a semiconductor laser module consisting of 1-3 bars, the larger heat generated during normal operation is not enough to be dissipated by conduction on three sides, so that air cooling heat dissipation is required. A high-density air-cooled heat dissipation groove is cut on a main heat sink right below a semiconductor laser bar chip to serve as an air outlet, and a low-density heat dissipation groove is cut at the rear of the main heat sink to serve as an air inlet. The air resistance of the air inlet of the air-cooled radiating groove is small, the contact area of the air outlet is large, the radiating area is increased, and the radiating efficiency is greatly improved.

Preferably, the left end of the N-surface negative electrode plate is thinner than the right end, the left end is welded on the lower heat dissipation heat sink through In solder, and the right end is welded on the electrode isolation layer through In solder, so that negative electricity is provided for the semiconductor laser bar chip. The positive electrode led out from the main heat sink 1 is used for positively charging the semiconductor laser bar chip 3, so that the semiconductor laser bar chip works normally.

Preferably, the main heat sink is of a rectangular structure and four corners of the main heat sink are provided with mounting screw holes.

(III) advantageous effects

The invention provides a non-water-cooling semiconductor laser bar packaging structure. The method has the following beneficial effects:

1) according to the non-water-cooling semiconductor laser bar packaging structure provided by the invention, the semiconductor laser chip is welded between the main heat sink and the lower heat sink, so that the N surface also has high-efficiency heat dissipation capability, a back heat dissipation mode is added, the heat dissipation path of the semiconductor laser bar chip is expanded to 3, the working temperature of a device is effectively reduced, and the service life is prolonged.

2) The invention packages the semiconductor laser module composed of 1-3 bars and introduces air cooling heat dissipation. The heat dissipation grooves with different densities are cut on the first heat dissipation heat sink, the heat dissipation area of the heat sink is increased, the density of the cutting under the chip is large, the part with small density is an air inlet, the wind resistance of the air inlet is small, the contact area of the air outlet is large, heat dissipation is good, and the heat dissipation efficiency is improved.

3) The invention does not adopt gold wire bonding, and has the advantages of low cost, simple process and convenient use.

Drawings

FIG. 1 is a perspective view of a non-water-cooled semiconductor laser single bar package structure according to the present invention;

FIG. 2 is a side view of a non-water-cooled semiconductor laser monoba package structure of the present invention;

FIG. 3 is a schematic view of a sandwich structure of a non-water-cooled semiconductor laser multi-bar package structure according to the present invention;

fig. 4 is a front view of an air-cooled heat sink of a non-water-cooled semiconductor laser bar package structure of the present invention.

FIG. 5 is a second side view of the non-water-cooled semiconductor laser single-bar package structure of the present invention

In the figure: 1. main heat deposition; 2. a solder layer; 3. a semiconductor laser bar chip; 4. an upper heat sink; 5. a lower heat sink; 6. an N-side negative electrode plate; 7. a back insulating layer; 8. an electrode isolation layer; 9. a back heat sink; 10. mounting a screw hole; 11. a sandwich structure; 12. air-cooled radiating grooves.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

As shown in fig. 1-3, the present invention provides a technical solution:

in the embodiment of the invention, a non-water-cooling semiconductor laser bar packaging structure is provided, wherein a semiconductor laser bar chip 3 adopts a 808nm laser bar chip with output power of 50W. The solder layer 2 is made of AuSn solder of 5 μm thickness for connecting the P, N side of the semiconductor laser bar chip 3 with the main heat sink 1 and the lower heat sink 5. The main heat sink 1 is made of oxygen-free Cu material, has a processing size of 30 multiplied by 10mm, and is used for heat dissipation and as a positive electrode of the semiconductor laser batten chip 3. The sizes of the air-cooled heat sink 12 are 1 × 5 × 6mm and 4 × 23 × 6mm, respectively, depending on the density. The lower heat dissipation heat sink 5 is made of CuW which is matched with the thermal expansion coefficient of the semiconductor laser batten chip 3 In a better mode, the size of the lower heat dissipation heat sink 5 is 10 multiplied by 1mm, the lower surface of the lower heat dissipation heat sink 5 and the N surface of the semiconductor laser batten chip 3 are fixedly welded through the solder layer 2, the upper surface of the lower heat dissipation heat sink is fixedly welded at the left end of the N surface negative electrode plate 6 through In solder, the N surface of the semiconductor laser batten chip 3 can be prevented from being subjected to efficient heat dissipation through a bonding gold wire, the service life of a device is prolonged, and the process is simple. The N-face negative electrode plate 6 is manufactured into a structure with a thin left end and a thin right end, the left end provides negative electricity for the N face of the semiconductor laser bar chip through the lower heat dissipation heat sink 5, and the right end is directly welded on the electrode isolation layer 8 through In solder without installation and fixation. The material of the back heat sink 7 is consistent with that of the lower heat sink 5, the back heat sink is fixed at the back position of the semiconductor laser bar chip 3 and is connected with the N-side negative electrode plate 6, and the back heat dissipation mode expands the heat dissipation path of the chip and improves the heat dissipation efficiency. When the number of the required bars exceeds one, the sandwich structure 11 is formed by respectively welding the upper heat dissipation heat sink and the lower heat dissipation heat sink on the surface of the chip P, N. For example, the required high-power semiconductor array module is composed of two semiconductor laser bar chips, and a sandwich structure with a P-side facing down is directly welded above a lower heat sink of a first bar by using AuSn welding flux on the basis of single bar packaging. The heat sink with the sandwich structure for radiating heat on the N surface of the chip is welded with the negative electrode plate 6 on the N surface by using In solder. The back insulating layer 7 and the electrode isolation layer 8 are made of AlN material with the thickness of 0.3-0.5mm, wherein the right surface of the back insulating layer 7 and the back heat dissipation heat sink 9 are welded and fixed by In solder, and the left surface of the back insulating layer 7 and the back of the chip are fixedly welded for insulation. The upper surface of the electrode isolation layer 8 is connected with the N-surface negative electrode plate 6 and the back heat dissipation heat sink 7, the lower surface is connected with the main heat sink 1, and the positive electrode and the negative electrode are in short circuit.

Compared with the traditional packaging structure, the invention has the following characteristics:

the invention leads the N surface of the semiconductor laser bar to carry out high-efficiency heat dissipation by adding the heat dissipation heat sink, and adds a back heat dissipation mode on the basis, thereby further widening the heat dissipation way of the semiconductor laser bar chip, more effectively reducing the temperature of an active area when the device works, improving the performance and prolonging the service life of the device.

The invention not only aims at the non-water-cooling packaging structure of a single bar, but also introduces air cooling heat dissipation for the packaging of a semiconductor laser module consisting of 1-3 bars. The heat sink is characterized in that heat dissipation grooves with different densities are cut on the main heat sink, the heat dissipation area of the heat sink is increased, the density of the cut part right below the chip is an air outlet, the part with small density is an air inlet, the air resistance of the air inlet is small, the contact area of the air outlet is large, and the heat dissipation efficiency is improved.

The invention adopts simple welding process, does not use bonding process with high requirement, uses conventional materials with low price, and has simple operation and low cost.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.