阅读说明：本技术 制造半导体装置的设备和方法
(Apparatus and method for manufacturing semiconductor device
) 是由 金起园
金大汉
李珉炅 于 2020-01-03 设计创作，主要内容包括：公开了一种用于制造半导体装置的设备和方法。该设备包括：室；蒸发器,蒸发有机源以在室中的基底上提供源气体；真空泵,将源气体和空气从室泵出；排气管线,在真空泵与室之间；以及分析器,连接到排气管线。分析器检测由有机源产生的衍生分子,并确定蒸发器的更换时间。(An apparatus and method for manufacturing a semiconductor device are disclosed. The apparatus comprises: a chamber; an evaporator to evaporate an organic source to provide a source gas on a substrate in a chamber; a vacuum pump to pump the source gas and air out of the chamber; an exhaust line between the vacuum pump and the chamber; and an analyzer connected to the exhaust line. The analyzer detects the derivative molecules produced by the organic source and determines the time to change the vaporizer.)
1. An apparatus for manufacturing a semiconductor device, the apparatus comprising:
a chamber;
an evaporator evaporating an organic source to generate a source gas and supplying the source gas to a substrate within a chamber;
a vacuum pump to pump the source gas and air out of the chamber;
an exhaust line establishing a fluid path between the vacuum pump and the chamber; and
an analyzer connected to the exhaust line, the analyzer detecting derivative molecules generated from the organic source and determining when to replace the vaporizer.
2. The apparatus of claim 1, wherein the vacuum pump comprises:
a roughing pump; and
a high vacuum pump generating a higher vacuum than the roughing pump, the high vacuum pump being disposed between the roughing pump and the chamber,
wherein the analyzer is disposed between the high vacuum pump and the chamber.
3. The apparatus of claim 2, wherein the exhaust line comprises:
a roughing line establishing a fluid path between the roughing pump and the chamber; and
a foreline extending parallel to the roughing line, the foreline establishing a fluid path between the high vacuum pump and the chamber, wherein
The foreline comprises:
a first foreline establishing a fluid path between the high vacuum pump and the chamber; and
a second foreline extending parallel to the first foreline, the second foreline establishing a fluid path between the analyzer and the chamber.
4. The apparatus of claim 3, further comprising:
a first foreline valve disposed between the high vacuum pump and the low vacuum pump;
a second foreline valve connected to the first foreline and disposed between the chamber and the high vacuum pump; and
a third foreline valve connected to the second foreline and disposed between the analyzer and the high vacuum pump.
5. The apparatus of claim 1, wherein the analyzer comprises a residual gas analyzer or a time-of-flight mass spectrometer.
6. The apparatus of claim 5, wherein the analyzer comprises:
a housing having an inlet through which the derivatized molecule is introduced;
a detector located in the housing, the detector detecting the derivatized molecule;
a first ionizer disposed between the detector and the inlet, the first ionizer applying ionizing charges to the derivative molecules;
a mass filter disposed between the first ionizer and the detector, the mass filter filtering impurities of the derivative molecules; and
an aperture disposed between the first ionizer and the mass filter.
7. The apparatus of claim 6, wherein the housing further comprises an outlet disposed between the detector and the vacuum pump,
wherein the inlet, the aperture and the outlet are all aligned in one direction.
8. The apparatus of claim 6, wherein the analyzer further comprises:
the first heater is arranged between the inner wall of the shell and the outer wall of the mass filter and heats the mass filter; and
and a second heater disposed between the inner wall of the housing and the detector, the second heater heating the detector.
9. The apparatus of claim 1, the apparatus further comprising:
a second ionizer disposed on the exhaust line between the chamber and the vacuum pump, the second ionizer charging the source gas and the derived molecules; and
a magnet disposed between the analyzer and the exhaust line adjacent the second ionizer, the magnet selectively extracting the derivatized molecules in the exhaust line and providing the extracted derivatized molecules to the analyzer.
10. The apparatus of claim 1, the apparatus further comprising: a controller outputting an interlock control signal to replace the evaporator when a partial pressure of the derivative molecules in the chamber increases to a predetermined level.
11. An apparatus for manufacturing a semiconductor device, the apparatus comprising:
a chamber;
an evaporator evaporating the organic source to generate a source gas and supplying the source gas into the chamber;
a roughing pump for pumping out the source gas and air in the chamber at a first vacuum pressure;
a high vacuum pump for pumping out the source gas and air in the chamber at a second vacuum pressure greater than the first vacuum pressure, the high vacuum pump being disposed between the low vacuum pump and the chamber;
a foreline connecting the high vacuum pump to the chamber;
an analyzer disposed on the foreline, the analyzer detecting the derivatized molecules produced by the organic source; and
and a controller receiving a detection signal of the derivative molecule to obtain a partial pressure of the derivative molecule, and outputting an interlock control signal to replace the evaporator when the partial pressure increases to a predetermined value equal to or greater than a reference partial pressure.
12. The apparatus of claim 11, the apparatus further comprising:
an ionizer connected to the foreline and disposed between the chamber and the analyzer; and
a magnet to filter the source gas in the foreline, the magnet to selectively extract the derivative molecules and provide the extracted derivative molecules to the analyzer.
13. The apparatus of claim 11, wherein the foreline comprises:
a first foreline establishing a fluid path between the high vacuum pump and the chamber; and
a second foreline extending parallel to the first foreline and establishing a fluid path between the high vacuum pump and the chamber, the second foreline establishing a fluid path between the analyzer and the chamber.
14. The apparatus of claim 11, wherein the analyzer comprises:
a detector to detect the derivative molecule;
a mass filter to filter impurities of the derived molecules; and
a housing enclosing the detector and the mass filter, the housing having an inlet through which the derivatized molecules are introduced and an outlet through which the derivatized molecules are discharged, the outlet being disposed opposite the inlet.
15. The apparatus of claim 14, wherein the analyzer further comprises an aperture disposed between the mass filter and the inlet,
wherein the inlet, the aperture and the outlet are all aligned in one direction.
16. A method of fabricating a semiconductor device, the method comprising:
heating an organic source in an evaporator to provide a source gas on a substrate;
pumping the source gas, derivatized molecules, and air through an exhaust line connected to the chamber;
detecting the derivatized molecules using an analyzer, the analyzer connected to the exhaust line; and
determining whether the partial pressure of the derivative molecule is equal to or greater than a reference partial pressure.
17. The method of claim 16, further comprising: when the partial pressure of the derivative molecule is equal to or greater than the reference partial pressure, an interlock control signal is output to replace the evaporator.
18. The method of claim 16, wherein
The organic source has a molecular weight equal to or greater than 300, and
the derivatized molecules have a molecular weight in the range of 50 to 250.
19. The method of claim 16, wherein the derivative molecule comprises anthracene, carbazole, thiophene, and/or aniline.
20. The method of claim 16, wherein the reference partial pressure is 2.0 × 10-10And (4) supporting.
Technical Field
The present disclosure relates to an apparatus, and more particularly, to an apparatus and method for manufacturing a semiconductor device.
Background
Complementary Metal Oxide Semiconductor (CMOS) semiconductor devices may generally include integrated circuits in which complementary P-channel and N-channel transistors are formed on a common semiconductor substrate. The CMOS semiconductor device may be provided with a color filter formed of an organic thin film. An organic thin film may be formed on a semiconductor substrate using an organic deposition apparatus. The organic deposition apparatus may include a vaporizer that vaporizes the organic source. The vaporized organic source may be disposed directly on the semiconductor substrate, or the vaporized organic source may be dispensed onto the semiconductor substrate using a showerhead.
Disclosure of Invention
Some example embodiments of the inventive concepts provide a semiconductor device manufacturing apparatus capable of determining a replacement time of an evaporator.
According to some example embodiments of the inventive concepts, an apparatus for manufacturing a semiconductor device includes a chamber. The evaporator evaporates an organic source to provide a source gas on a substrate within the chamber. A vacuum pump pumps the source gas and air out of the chamber. An exhaust line is disposed between the vacuum pump and the chamber. The analyzer is connected to the exhaust line. The analyzer detects the derivative molecules produced by the organic source and determines the time to change the vaporizer.
According to some example embodiments of the inventive concepts, an apparatus for manufacturing a semiconductor device includes a chamber. The evaporator evaporates the organic source to supply a source gas into the chamber. The roughing pump pumps the source gases and air out of the chamber at a first vacuum pressure. The high vacuum pump pumps out the source gases and air in the chamber at a second vacuum pressure that is greater than the first vacuum pressure. A high vacuum pump is disposed between the low vacuum pump and the chamber. The foreline connects the high vacuum pump to the chamber. The analyzer is disposed on the head-end pipeline. The analyzer detects the derivatized molecules produced by the organic source. The controller receives the detection signal of the derivative molecule and obtains a partial pressure of the derivative molecule. When the partial pressure increases to a value equal to or greater than the reference partial pressure, the controller outputs an interlock control signal to replace the evaporator.
According to some example embodiments of the inventive concepts, a method of manufacturing a semiconductor device includes heating an organic source in an evaporator to provide a source gas on a substrate. The source gas, derivatized molecules, and air are pumped through an exhaust line connected to the chamber. The analyzer is used to detect the derivative molecules. The analyzer is connected to the exhaust line. Determining whether the partial pressure of the derivative molecule is equal to or greater than a reference partial pressure.
Drawings
A more complete understanding of the present disclosure and many of the attendant aspects thereof will be readily obtained as the same becomes better understood by reference to the following detailed description when considered in connection with the accompanying drawings, wherein:
fig. 1 is a schematic view illustrating a semiconductor device manufacturing apparatus according to some example embodiments of the inventive concepts;
FIG. 2 is a graph showing the pressure of the chamber depicted in FIG. 1;
FIG. 3 is a graph showing the partial pressure of derivative molecules detected in the analyzer depicted in FIG. 1;
FIG. 4 is a schematic diagram illustrating an example of the analyzer shown in FIG. 1;
fig. 5 is a schematic view illustrating a semiconductor device manufacturing apparatus according to some example embodiments of the inventive concepts;
fig. 6 is a schematic view illustrating a semiconductor device manufacturing apparatus according to some example embodiments of the inventive concepts;
FIG. 7 is a schematic diagram showing the analyzer of FIG. 6; and is
Fig. 8 is a flowchart illustrating a method of manufacturing a semiconductor device according to some example embodiments of the inventive concepts.
Detailed Description
In describing exemplary embodiments of the present disclosure illustrated in the drawings, specific terminology is employed for the sake of clarity. However, the disclosure is not intended to be limited to the specific terminology so selected, and it is to be understood that each specific element includes all technical equivalents that operate in a similar manner.
Fig. 1 is a schematic view illustrating a semiconductor device manufacturing apparatus 100 according to some example embodiments of the inventive concepts.
Referring to fig. 1, the semiconductor device manufacturing apparatus 100 may include a Physical Vapor Deposition (PVD) apparatus or an organic deposition apparatus. Alternatively, the semiconductor device manufacturing apparatus 100 may include a Chemical Vapor Deposition (CVD) apparatus or a sputter, but the inventive concept is not limited thereto and other deposition manners may be used. The semiconductor device manufacturing apparatus 100 may include, for example, a chamber 110, a vaporizer 120, an exhaust 130, a vacuum pump 140, an exhaust line 150, an analyzer 160, and a controller 170. As used herein, vaporizer 120 may be understood to be a device configured to vaporize material from a solid form to a gaseous form by applying heat to the material in solid form. Thus, the evaporator may be embodied as a heating element. As used herein, the exhaust stack 130 may be understood as a device configured to release or ventilate vaporized particles and other gases to the outside. Thus, the exhaust stack may be a vent or port. As used herein, the analyzer 160 may be implemented as a computer device, a system on a chip, or some other digital processor in conjunction with one or more sensors. As used herein, the controller 170 may be implemented as a computer device, a system on a chip, or some other digital processor.
The chamber 110 may hermetically seal the substrate W from the outside. For example, chamber 110 may have a showerhead 112 and a pedestal 114. Showerhead 112 may be disposed in an upper portion of chamber 110. The pedestal 114 may be placed in a lower portion of the chamber 110. The showerhead 112 may supply a source gas 128 for depositing an organic thin film to the substrate W. The susceptor 114 may receive a substrate W thereon. The susceptor 114 may include a heating plate that heats the substrate W.
The vaporizer 120 may be connected to the showerhead 112 of the chamber 110. Vaporizer 120 may vaporize organic source 122 (e.g., organic source material in solid form) to provide source gas 128 to showerhead 112. Alternatively, the evaporator 120 may be disposed within the chamber 110. For example, evaporator 120 may include a crucible or an evaporation boat. The vaporizer 120 may heat the organic source 122 to an elevated temperature of about 300 ℃ to produce the source gas 128. The organic source 122 may be vaporized and provided into the chamber 110. When organic source 122 is completely vaporized in vaporizer 120, vaporizer 120 can be replaced with vaporizer 120 having a new source 122.
In addition, during idle times, the vaporizer 120 may pre-heat the organic source 122 to a temperature between 200 ℃ and 250 ℃ so that the organic source 122 does not vaporize, but is more susceptible to vaporization when in use. The organic source 122 may thermally degrade in the vaporizer 120 or in a gas supply line 124, which will be discussed below, with the result that derivative molecules (or derivatives) 129 may be induced. The derivative molecules 129 may have a chemical composition that is different from the chemical composition of the source gas 128. Each of the organic source 122 and the source gas 128 may have a molecular weight equal to or greater than about 300. For example, each of the organic source 122 and the source gas 128 may have a molecular weight of about 400 to about 1500. The derivative molecules 129 will be lighter than the source gas 128. The derivatized molecule 129 may have a molecular weight of about 50 to about 250. For example, the derivative molecules 129 can include anthracene, carbazole, thiophene, and/or aniline. The presence of the derivatized molecules 129 increases the pressure of the chamber 110 and thus can lead to failure of the organic deposition process. When it is determined that the derivative molecules 129 are produced in large quantities, the evaporator 120 can be replaced.
A gas supply line 124 and a gas supply valve 126 may be disposed between the vaporizer 120 and the chamber 110. A source gas 128 may be provided to the showerhead 112 through a gas supply line 124. The gas supply line 124 may be heated to a high temperature of about 250 c to prevent the source gas 128 from being adsorbed. A gas supply valve 126 may be mounted on the gas supply line 124 adjacent to the vaporizer 120. The gas supply valve 126 may open and close the supply of the source gas 128.
An exhaust stack 130 may be coupled to a lower portion of the chamber 110. Exhaust stack 130 may exhaust source gases 128 and air from chamber 110. For example, the exhaust stack 130 may include a scrubber. The exhaust stack 130 may purge the source gas 128.
A vacuum pump 140 may be installed between the exhaust stack 130 and the chamber 110. Vacuum pump 140 may pump source gas 128 and air out of chamber 110. For example, vacuum pump 140 may include a roughing pump 142 and a roughing pump 144. Roughing pump 142 and roughing pump 144 can be connected in series. Roughing pump 142 can be configured to provide a lower vacuum pressure than roughing pump 144.
A roughing pump 142 may be connected between the high vacuum pump 144 and the exhaust stack 130, the roughing pump 142 may be configured such that the source gases 128 and air in the chamber 110 are approximately 1.0 × 10-3The low vacuum pressure in Torr (Torr) was pumped out. Roughing pump 142 can include a dry pump or a rotary pump.
High vacuum pump 144 may be connected between low vacuum pump 142 and chamber 110 high vacuum pump 144 may be configured such that source gases 128 and air in chamber 110 are approximately 1.0 × 10-6The high vacuum pressure of the Torr is pumped out. High vacuum pump 144 may include a cryogenic pump or a turbo pump.
Exhaust line 150 may connect exhaust stack 130 to chamber 110. Exhaust line 150 may be connected to roughing pump 142 and roughing pump 144 of vacuum pump 140. A roughing pump 142 may be disposed adjacent the exhaust 130 and a high vacuum pump 144 may be disposed adjacent the chamber 110. For example, the exhaust line 150 may include a foreline 152 and a roughing line 154.
Foreline 152 may allow high vacuum pump 144 to have a series connection between chamber 110 and roughing pump 142. A foreline valve 151 may be disposed between the high vacuum pump 144 and the roughing pump 142. Optionally, a foreline valve 151 may be installed on the foreline 152 between the chamber 110 and the high vacuum pump 144, but the inventive concept is not limited thereto.
Roughing line 154 may connect roughing pump 142 directly to chamber 110 and thus may bypass roughing pump 144. For example, foreline 152 and roughing line 154 can be connected in parallel between chamber 110 and roughing pump 142. High vacuum pump 144 may be connected to foreline 152. Roughing valve 153 can be disposed on roughing line 154. Roughing valve 153 can be switched in reverse of foreline valve 151. When air is initially pumped out of chamber 110, roughing valve 153 can be opened and foreline valve 151 can be closed. When roughing valve 153 is opened and foreline valve 151 is closed, roughing pump 142 can be operated so that air is pumped out of chamber 110 at a low vacuum pressure. Thereafter, roughing valve 153 may be closed and foreline valve 151 may be opened. When roughing valve 153 is closed and foreline valve 151 is opened, high vacuum pump 144 may be operated so that air is pumped out of chamber 110 at a high vacuum pressure.
Fig. 2 is a graph illustrating the pressure 111 of the chamber 110 shown in fig. 1.
Referring to FIG. 2, the pressure 111 of the chamber 110 may reach a point of rapid increase with the time of use of the evaporator 120 when the evaporator 120 is used for an initial period of time (e.g., about 3 hours or less), the pressure 111 of the chamber 110 may be uniformly maintained at about 1.0 × 10-6After the initial use time of the evaporator 120 (e.g., after about 3 hours or more), the pressure 111 of the chamber 110 can be from about 1.0 × 10-6The Torr is increased more rapidly to about 1.0 × 10-5After replacing the evaporator 120, the pressure 111 of the chamber 110 may be reduced back to about 1.0 × 10-6Torr。
Referring again to fig. 1, the analyzer 160 may be connected to the foreline 152 between the high vacuum pump 144 and the chamber 110. The analyzer 160 may detect the presence and/or quantity of derivative molecules 129 of the source gas 128 and/or otherwise analyze the derivative molecules 129 of the source gas 128 and then determine a time for replacement of the evaporator 120. For example, the analyzer 160 may comprise a residual gas analyzer or a time-of-flight mass spectrometer.
Fig. 3 is a graph showing the partial pressure 113 and the reference partial pressure 115 of the derivatized molecule 129 shown in fig. 1.
Referring to FIG. 3, the analyzer 160 may measure the partial pressure 113 of the derivatized molecule 129 when the vaporizer 120 is initially used, the partial pressure 113 may be equal to or less than about 1.0 × 10-10After using the evaporator 120, degradation of the organic source 122 may result in an increase in the partial pressure 113 to a value equal to or greater than the reference partial pressure 115, the reference partial pressure 115 may be, for example, about 2.0 × 10- 10And (5) Torr. When the partial pressure 113 increases to a value equal to or greater than the reference partial pressure 115, the evaporator 120 may be replaced. Accordingly, the analyzer 160 can detect the derivative molecules 129 to determine the time of replacement of the vaporizer 120.
Referring to fig. 2 and 3, the partial pressure 113 of the derivative molecule 129 may be proportional to the pressure 111 of the chamber 110. As the pressure 111 of the chamber 110 increases, the partial pressure 113 of the derivative molecules 129 may increase to a value equal to or greater than the reference partial pressure 115. Accordingly, the analyzer 160 can measure the derivative molecules 129 to determine the cause of the increase in the pressure 111 of the chamber 110 or the increase in the pressure 111 of the chamber 110. In addition, the analyzer 160 may determine the species of the derivative molecule 129. The partial pressure 113 may vary based on the species of the derivative molecule 129.
Fig. 4 is a schematic diagram illustrating an example of the analyzer 160 shown in fig. 1.
Referring to fig. 4, the analyzer 160 may include a housing 180, a first ionizer 182, an aperture 184, a mass filter 186, and a detector 188. The detector 188 may be implemented as one or more sensors.
The housing 180 may have an inlet 181. The inlet 181 may be connected to the foreline 152. The derivative molecules 129 may be introduced into the housing 180 through the inlet 181.
The first ionizer 182 may be disposed in the housing 180. The first ionizer 182 may ionize the derivative molecules 129. First ionizer 182 may include a filament 183, a faraday cup 185, and an accelerating electrode 187. The filament 183 may provide an electron beam to the derivatized molecule 129 to charge the derivatized molecule 129. A faraday cup 185 may be placed between the filament 183 and the accelerating electrode 187. The faraday cup 185 can protect the charged derivatized molecules 129 from the outside world. An accelerating electrode 187 can be disposed between the faraday cup 185 and the aperture 184. The accelerating electrode 187 may accelerate the charged derivatized molecules 129. The derivative molecules 129 can be provided to the pores 184 and the mass filter 186.
The aperture 184 may be disposed between an accelerating electrode 187 and a mass filter 186. The apertures 184 may collect the accelerated derivatized molecules 129 on the mass filter 186. Optionally, the aperture 184 may regulate the flow rate of the derivative molecules 129, although the inventive concept is not so limited.
A mass filter 186 may be disposed between the aperture 184 and the detector 188. For example, the mass filter 186 can include a quadrupole mass filter. The mass filter 186 can be configured to filter impurities and allow the derivative molecules 129 to pass through the mass filter 186. For example, the mass filter 186 can electrostatically filter impurities that are lighter than the derivative molecules 129. For example, the mass filter 186 can filter impurities heavier than the derivative molecule 129. The first heater 189 may be disposed outside the mass filter 186. First heater 189 may be disposed between an inner wall of housing 180 and an outer wall of mass filter 186. First heater 189 may heat and clean mass filter 186.
The housing 180 may be provided with a detector 188 on a side wall thereof opposite the inlet 181. The detector 188 may detect the derivative molecule 129. For example, the detector 188 may include a collector electrode.
Referring again to fig. 1, a controller 170 may be connected to the gas supply valve 126, foreline valve 151, roughing valve 153 and analyzer 160. Controller 170 may control gas supply valve 126, foreline valve 151, and roughing valve 153. The controller 170 may use the detection signal from the detector 188 of the analyzer 160 and may analyze the derivative molecule 129. For example, the controller 170 may calculate the number of derivatized molecules 129 per unit time, and may then obtain the partial pressure 113 of derivatized molecules 129. Based on the detection of the derivative molecule 129, the controller 170 can monitor the pressure 111 of the chamber 110. The controller 170 may determine the species of the derivative molecule 129. When the partial pressure 113 of the derivative molecule 129 increases, the controller 170 may output an interlock control signal to replace the vaporizer 120.
Fig. 5 is a schematic view illustrating an example of a semiconductor device manufacturing apparatus 100 according to the inventive concept.
Referring to fig. 5, the semiconductor device manufacturing apparatus 100 may further include a second ionizer 192 and a magnet 194. The second ionizer 192 and the magnet 194 may improve the efficiency of detecting the derivative molecules 129.
The second ionizer 192 may be connected to the foreline 152 between the chamber 110 and the high vacuum pump 144. The second ionizer 192 may charge the source gas 128 and the derivative molecules 129.
A magnet 194 may be disposed between the second ionizer 192 and the analyzer 160. Additionally, a magnet 194 may be connected between the foreline 152 and the analyzer 160. The magnet 194 may use an electromagnetic field to selectively extract the derivative molecules 129, and may then provide the extracted derivative molecules 129 to the analyzer 160. Magnet 194 may filter source gas 128, the mass of source gas 128 being different from the mass of derivative molecules 129. For example, a relatively heavy source gas 128 may be pumped from the second ionizer 192 to the high vacuum pump 144, and relatively light derivative molecules 129 may be extracted through the magnet 194.
The chamber 110, the vaporizer 120, the exhaust 130, the vacuum pump 140, the exhaust line 150, the analyzer 160, and the controller 170 may be configured the same as or similar to the chamber 110, the vaporizer 120, the exhaust 130, the vacuum pump 140, the roughing line 154, and the controller 170 shown in fig. 1.
Fig. 6 is a schematic view illustrating an example of a semiconductor device manufacturing apparatus 100 according to the inventive concept.
Referring to fig. 6, the semiconductor device manufacturing apparatus 100 may be configured such that the foreline 152 includes a first foreline 156 and a second foreline 158. A first foreline 156 and a second foreline 158 can be connected in parallel between chamber 110 and high vacuum pump 144.
First foreline 156 can connect high vacuum pump 144 directly to chamber 110. A second foreline valve 155 can be mounted on the first foreline 156 between the chamber 110 and the high vacuum pump 144. The second foreline valve 155 can allow or interrupt the flow of the source gas 128, the derivative molecules 129, and air in the first foreline 156.
The second foreline 158 can allow the analyzer 160 to have a series connection between the chamber 110 and the high vacuum pump 144. Second foreline 158 may serve as a measurement line for derivatized molecules 129. A third foreline valve 157 may be mounted on the second foreline 158 between the analyzer 160 and the high vacuum pump 144. When third foreline valve 157 is opened at regular intervals, analyzer 160 may detect derivative molecule 129. Third foreline valve 157 may be opened when second foreline valve 155 is closed. When third foreline valve 157 is opened, analyzer 160 can detect derivative molecule 129.
The chamber 110, the evaporator 120, the exhaust 130, the vacuum pump 140, the roughing line 154 and the controller 170 can be configured the same as or similar to the chamber 110, the evaporator 120, the exhaust 130, the vacuum pump 140, the roughing line 154 and the controller 170 shown in fig. 1.
Fig. 7 is a schematic diagram illustrating an example of the analyzer 160 shown in fig. 6.
Referring to fig. 7, the housing 180 of the analyzer 160 may have an inlet 181 and an outlet 191 connected in series with the second foreline 158. The inlet 181, the aperture 184, and the outlet 191 may all be aligned in one direction. The outlet 191 may be connected to the second foreline 158 between the housing 180 and the third foreline valve 157. The outlet 191 may thus be connected to a high vacuum pump 144. The derivatized molecules 129 may be introduced into the housing 180 through the inlet 181 and may be discharged from the housing 180 through the outlet 191. The mass filter 186 may filter the source gas 128. The outlet 191 may increase the flow rate of the derivatized molecules 129 in the housing 180, and thus the detector 188 may increase the efficiency of detecting the derivatized molecules 129. The second heater 190 may be disposed adjacent to the detector 188. A second heater 190 may be disposed between the detector 188 and an inner wall of the housing 180. The second heater 190 may heat and clean the detector 188.
The first ionizer 182, the aperture 184, the mass filter 186, and the first heater 189 of the analyzer 160 may be configured to be the same as or similar to the first ionizer 182, the aperture 184, the mass filter 186, and the first heater 189 of the analyzer 160 shown in fig. 4.
A semiconductor device manufacturing method using the semiconductor device manufacturing apparatus 100 configured as described above is described below.
Fig. 8 is a flowchart illustrating a method of manufacturing a semiconductor device according to some example embodiments of the inventive concepts.
Referring to fig. 8, the semiconductor device manufacturing method may include: heating the organic source 122 in the evaporator 120 to provide a source gas 128 on the substrate W in the chamber 110 (S10); pumping the source gas 128, the derivatized molecule 129, and air through an exhaust line 150 connected to the chamber 110 (S20); detecting the derivatized molecules 129 of the organic source 122 using an analyzer 160 coupled to the exhaust line 150 (S30); determining whether the partial pressure 113 of the derivative molecule 129 is equal to or greater than the reference partial pressure 115 (S40); and replacing the evaporator 120 (S50).
At step S10, the evaporator 120 may heat the organic source 122 to provide the source gas 128 on the substrate W in the chamber 110. The vaporizer 120 may heat the organic source 122 to an elevated temperature equal to or greater than about 300 ℃ to produce the source gas 128. The organic source 122 may have a molecular weight equal to or greater than about 300. For example, the organic source 122 may have a molecular weight of about 400 to about 1500. The source gas 128 may be dispensed onto the substrate W through the showerhead 112. A source gas 128 may be provided on the substrate W to form an organic thin film. When the vaporizer 120 heats the organic source 122 for a certain time or more, the organic source 122 may generate the derivatized molecules 129. The derivatized molecule 129 may have a molecular weight of about 50 to about 250. For example, the derivative molecule 129 can include anthracene, carbazole, thiophene, or aniline. The derivatised molecules 129 will be provided on the substrate W. The derivatized molecules 129 may be exhausted through the chamber 110 and the exhaust line 150 without depositing an organic film.
At step S20, vacuum pump 140 may be operated to pump source gas 128, derivatized molecules 129, and air out of chamber 110 through exhaust line 150, chamber 110 may have an approximate 1.0 × 10-6High vacuum pressure of Torr.
At step S30, the analyzer 160 may detect the derivatized molecule 129 in the exhaust line 150. The analyzer 160 may measure the derivative molecules 129 at regular intervals (e.g., at one hour intervals). In addition, the analyzer 160 may measure the derivative molecules 129 based on the molecular weight of the derivative molecules 129.
At step S40, the controller 170 may determine whether the partial pressure 113 of the derivative molecule 129 measured is equal to or greater than the reference partial pressure 115. The controller 170 may calculate the number of derivatized molecules 129 per unit time and may then obtain the partial pressure 113 of derivatized molecules 129. When the evaporator 120 is initially used, the partial pressure 113 may be less than the reference partial pressure 115. After the evaporator 120 is used for a certain length of time, the partial pressure 113 may be increased to a value equal to or greater than the reference partial pressure 115. The controller 170 may periodically acquire the partial pressure 113 of the derivative molecules 129 and may compare the partial pressure 113 and the reference partial pressure 115 with each other to monitor the organic thin film deposition process. In addition, the controller 170 may measure the molecular weight of the derivative molecule 129 and may then determine the species of the derivative molecule 129.
When the partial pressure 113 of the derivative molecule 129 is less than the reference partial pressure 115, steps S10 through S40 may be repeatedly performed.
At step S50, when the partial pressure 113 of the derivative molecules 129 increases to a value equal to or greater than the reference partial pressure 115, the controller 170 may output an interlock control signal to replace the evaporator 120. When the interlock control signal is output, an operator or a replacement tool may replace the evaporator 120.
As described above, the semiconductor device manufacturing apparatus according to some example embodiments of the inventive concepts may be configured such that the analyzer between the chamber and the vacuum pump is used to detect the derivative molecules of the organic source and determine the replacement time of the vaporizer.
Although exemplary embodiments of the present invention have been described in conjunction with the accompanying drawings, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the disclosure.
