阅读说明：本技术 一种紧凑高效异型件超厚膜层设备 (Compact and efficient special-shaped part ultra-thick film layer equipment ) 是由 张佳 于 2019-03-28 设计创作，主要内容包括：本发明公开了一种紧凑高效异型件超厚膜层设备,包括真空室壳体,所述真空室壳体上端固定焊接有第一分子泵法兰接口,所述真空室壳体的前端右侧和后侧左侧均固定焊接有金属离子注入法兰接口,所述真空室壳体的前端中部固定焊接有样品导入法兰接口,所述真空室壳体的前侧左下部和右下部均焊接有磁过滤沉积法兰接口,所述真空室壳体的下端中部焊接有第二分子泵法兰接口,所述真空室壳体的后端中部焊接有加热管法兰接口,所述真空室壳体的左侧上部固定连接有自动观察窗。该紧凑高效异型件超厚膜层设备,制备高质量混合层以及过渡层,使涂层与基底结合良好,有效降低类金刚石膜的内应力,提高整体涂层质量。(The invention discloses compact and efficient special-shaped piece super-thick film layer equipment which comprises a vacuum chamber shell, wherein a first molecular pump flange interface is fixedly welded at the upper end of the vacuum chamber shell, metal ion injection flange interfaces are fixedly welded on the right side of the front end and the left side of the rear side of the vacuum chamber shell, a sample introduction flange interface is fixedly welded in the middle of the front end of the vacuum chamber shell, magnetic filtration and deposition flange interfaces are welded on the left lower portion and the right lower portion of the front side of the vacuum chamber shell, a second molecular pump flange interface is welded in the middle of the lower end of the vacuum chamber shell, a heating pipe flange interface is welded in the middle of the rear end of the vacuum chamber shell, and an automatic observation window is fixedly connected to the upper. The compact and efficient special-shaped part ultra-thick film layer equipment is used for preparing a high-quality mixing layer and a transition layer, so that the coating is well combined with the substrate, the internal stress of a diamond-like film is effectively reduced, and the quality of the whole coating is improved.)

1. A compact high-efficient profile shapes super thick rete equipment, includes vacuum chamber casing (9), its characterized in that: the vacuum chamber is characterized in that a first molecular pump flange interface (1) is fixedly welded at the upper end of a vacuum chamber shell (9), a metal ion injection flange interface (2) is fixedly welded on the right side of the front end and the left side of the rear side of the vacuum chamber shell (9), a sample introduction flange interface (3) is fixedly welded in the middle of the front end of the vacuum chamber shell (9), magnetic filtration deposition flange interfaces are welded on the left lower portion and the right lower portion of the front side of the vacuum chamber shell (9), a second molecular pump flange interface (5) is welded in the middle of the lower end of the vacuum chamber shell (9), a heating pipe flange interface (6) is welded in the middle of the rear end of the vacuum chamber shell (9), an automatic observation window (7) is fixedly connected to the upper portion of the left side of the vacuum chamber shell (9), and a vacuum pumping pipeline connecting flange (, magnetic filtration deposit flange interface (4) link to each other with magnetic filtration cathode arc flange seat (10), the inner chamber lateral wall fixedly connected with magnetic filtration negative pole (11) of cathode arc flange seat (10) is filtered to the magnetism, the lower extreme fixedly connected with anode cylinder (14) of cathode arc flange seat (10) is filtered to the magnetism, pulse solenoid (12) and focus solenoid (13) have been cup jointed to the downside on the outside of anode cylinder (14), the lower extreme of anode cylinder (14) has magnetic filtration gulf pipe (15) through flange connection, transition solenoid (16) have been cup jointed on the outside upper portion of magnetic filtration gulf pipe (15), high pulse solenoid (17) have been cup jointed to the outside middle part and the lower part of magnetic filtration gulf pipe (15), metal ion injection flange interface (2) are through flange (19) connection ion generation device (18), ion generation device (18) are including ion injection cathode target (181), have been cup jointed to ion injection cathode arc flange (181), have been connected to ion generation device, An auxiliary anode plate (182), an extraction electrode and acceleration electrode (183) and a focusing electrode (184).

2. A compact high efficiency profile ultra thick film layer apparatus according to claim 1, wherein: the ion implantation cathode target (181) is connected in series with a first power supply through a lead, the auxiliary anode plate (182) is connected in series with a second power supply and a resistor, the second power supply is connected in parallel with the resistor, and the resistor is connected with an accelerating electrode (183) and a focusing electrode (184).

3. A compact high efficiency profile ultra thick film layer apparatus according to claim 1, wherein: the first molecular pump flange interface (1) and the second molecular pump flange interface (5) are arranged up and down correspondingly, and the first molecular pump flange interface (1) and the second molecular pump flange interface (5) are connected with the molecular pump through pipelines.

4. A compact high efficiency profile ultra thick film layer apparatus according to claim 1, wherein: the heating pipe flange connector (6) is connected with a heat supply device through a pipeline, and the heat supply device is an air source heating device.

5. A compact high efficiency profile ultra thick film layer apparatus according to claim 1, wherein: the vacuum chamber vacuum pump is characterized in that the first molecular pump flange interface (1), the metal ion injection flange interface (2), the sample introduction flange interface (3), the magnetic filtration deposition flange interface (4), the second molecular pump flange interface (5), the heating pipe flange interface (6) and the vacuumizing pipeline connecting flange (8) are communicated with the vacuum chamber shell (9) through pipelines, and each pipeline is provided with a switch valve.

Technical Field

The invention relates to the technical field of industry, in particular to compact and efficient special-shaped piece ultra-thick film layer equipment.

Background

The ceramic coating has excellent corrosion resistance, good toughness and high hot hardness, and can bear certain elastic deformation pressure. Compared with chemical vapor deposition, the physical deposition method is adopted to deposit the coating, so that the bonding force between the coating and the substrate is greatly improved, and the coating has wide application. However, ceramic films generally have a relatively high coefficient of friction, which is relatively limited in its effectiveness when it comes to improving the wear resistance of the workpiece. As is well known, diamond-like carbon films have many properties similar to those of diamond films, such as hardness, ultralow friction coefficient, low wear rate, good heat conductivity, small thermal expansion coefficient and the like, and the magnetic filtration deposition technology, as a high-ionization-rate technology, has the advantages of good controllability of a film deposition process and greatly improved film properties (including film-substrate binding force, mechanical properties, friction and wear resistance, chemical corrosion resistance and the like). However, from the aspect of deposition efficiency, the technology has the disadvantages of low deposition rate and poor relative diffraction of the coating film, so that a compact and efficient profile ultra-thick film device is provided.

Disclosure of Invention

The invention aims to provide compact and efficient special-shaped piece ultra-thick film layer equipment to solve the problems in the background technology.

In order to achieve the purpose, the invention provides the following technical scheme: a compact and efficient irregular part ultra-thick film layer device comprises a vacuum chamber shell, wherein a first molecular pump flange interface is fixedly welded at the upper end of the vacuum chamber shell, metal ion injection flange interfaces are fixedly welded on the right side of the front end and the left side of the rear end of the vacuum chamber shell, a sample introduction flange interface is fixedly welded in the middle of the front end of the vacuum chamber shell, magnetic filtration deposition flange interfaces are welded on the left lower portion and the right lower portion of the front side of the vacuum chamber shell, a second molecular pump flange interface is welded in the middle of the lower end of the vacuum chamber shell, a heating pipe flange interface is welded in the middle of the rear end of the vacuum chamber shell, an automatic observation window is fixedly connected on the upper portion of the left side of the vacuum chamber shell, a vacuumizing pipeline connecting flange is fixedly connected on the lower portion of the left side of the vacuum chamber shell, the inner chamber lateral wall fixedly connected with magnetism of magnetic filtration cathode arc flange seat filters the negative pole, the lower extreme fixedly connected with anode cylinder of magnetic filtration cathode arc flange seat, the outside of anode cylinder about the side has cup jointed pulse solenoid and focus solenoid, the lower extreme of anode cylinder has the magnetic filtration gulf pipe through flange connection, the transition solenoid has been cup jointed on the outside upper portion of magnetic filtration gulf pipe, the high pulse solenoid has been cup jointed to the outside middle part and the lower part of magnetic filtration gulf pipe, metal ion injection flange interface passes through flange connection ion generating device, ion generating device includes that ion injection cathode target, supplementary anode plate draw electrode and accelerating electrode and focus electrode.

Preferably, the ion implantation cathode target is connected in series with a first power supply through a lead, the auxiliary anode plate is connected in series with a second power supply and a resistor, the second power supply is connected in parallel with the resistor, and the resistor is connected with the accelerating electrode and the focusing electrode.

Preferably, the first molecular pump flange interface and the second molecular pump flange interface are arranged up and down correspondingly and are connected with the molecular pump through a pipeline.

Preferably, the heating pipe flange interface is connected with a heat supply device through a pipeline, and the heat supply device is an air source heating device.

Preferably, the first molecular pump flange interface, the metal ion injection flange interface, the sample introduction flange interface, the magnetic filtration deposition flange interface, the second molecular pump flange interface, the heating pipe flange interface and the vacuumizing pipeline connecting flange are all communicated with the vacuum chamber shell through pipelines, and each pipeline is provided with a switch valve.

Compared with the prior art, the invention has the beneficial effects that: the compact and efficient special-shaped piece ultra-thick film layer equipment has the advantages that the temperature in the whole deposition process is low through the integral structure of the equipment, and the influence on a substrate is almost avoided. The high quality mixed layer and the transition layer are prepared, so that the coating and the substrate are well combined. Pulse bias voltage is applied to the target, so that the ion energy reaching the base material is multi-energy ion beams in a mixed state, the internal stress of the diamond-like film is effectively reduced, and the quality of the whole coating is improved. The coating with the characteristics of high hardness, wear resistance, low friction coefficient, high binding force and the like is prepared by combining the unique characteristics of the ceramic film layer and the diamond-like carbon film layer, and the application prospect is wide.

Drawings

FIG. 1 is a front view of the present invention;

FIG. 2 is a top view of the present invention;

FIG. 3 is a bottom view of the present invention;

FIG. 4 is a schematic view of an ion generating device according to the present invention;

FIG. 5 is a circuit diagram of an ion generating device according to the present invention;

fig. 6 is a cross-sectional view of an anode cartridge and magnetic filtration bay of the present invention.

In the figure: 1 a first molecular pump flange interface, 2 a metal ion injection flange interface, 3 a sample introduction flange interface, 4 a magnetic filtration deposition flange interface, 5a second molecular pump flange interface, 6 a heating pipe flange interface, 7 an automatic observation window, 8 a vacuum pipeline connecting flange, 9 a vacuum chamber shell, 10 a magnetic filtration cathode arc flange seat, 11 a magnetic filtration cathode, 12 pulse coils, 13 focusing coils, 14 anode cylinders, 15 a magnetic filtration inlet pipe, 16 transition coils, 17 high pulse coils, 18 ion generation devices, 181 an ion injection cathode target, 182 an auxiliary anode plate, 183 leading-out electrodes and accelerating electrodes, 184 focusing electrodes and 19 connecting flanges.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1-6, the present invention provides a technical solution: the utility model provides a compact high-efficient profile shapes super thick film layer equipment, includes real empty room casing 9, the fixed welding in real empty room casing 9 upper end has first molecular pump flange interface 1, the equal fixed welding in real empty room casing 9's front end right side and rear side left side has metal ion implantation flange interface 2, and metal ion implantation flange interface 2 is equipped with two, all is connected with ion generating device 18, and both ion beams are the contained angle and distribute, and the angle is between 30 degrees to 90 degrees, utilizes the pulse of the low duty cycle of high power magnetic field technique and the produced plasma interact of FCVA, can prepare the performance more excellent, even film. Under the condition of ensuring the quality of the film layer, the design size is reduced as much as possible, the space is reduced, and the cost is reduced. The overall design is further optimized through the optimization of the wiring of the equipment circuit, and the mixed layer is prepared by alternately utilizing an ion implantation system and a vacuum cathode arc deposition system, so that the surface property is improved, and the film-substrate binding force is improved; the fixed welding in front end middle part of real empty room casing 9 has sample leading-in flange interface 3, and sample leading-in flange interface 3 is in order to add the material to real empty room casing 9, the left lower part of the front side of real empty room casing 9 and right lower part all have welded the magnetism and filter deposition flange interface, the welding in lower extreme middle part of real empty room casing 9 has second molecular pump flange interface 5, first molecular pump flange interface 1 and second molecular pump flange interface 5 correspond the setting from top to bottom, first molecular pump flange interface 1 and second molecular pump flange interface 5 pass through the pipe connection molecular pump. The middle part of the rear end of the vacuum chamber shell 9 is welded with a heating pipe flange interface 6, the heating pipe flange interface 6 is connected with a heat supply device through a pipeline, and the heat supply device is an air source heating device. The automatic observation window 7 of the left side upper portion fixedly connected with of real empty room casing 9, the left side lower part fixedly connected with evacuation pipeline flange 9 of real empty room casing 9, magnetism filters deposit flange interface 4 and magnetism and filters cathode arc flange seat 10 and link to each other, the inner chamber lateral wall fixedly connected with magnetism of magnetism filtration cathode arc flange seat 10 filters negative pole 11, the lower extreme fixedly connected with anode barrel 14 of magnetism filtration cathode arc flange seat 10, pulse solenoid 12 and focusing solenoid 13 have been cup jointed to the side about the outside of anode barrel 14, the lower extreme of anode barrel 14 has magnetism to filter the gulf pipe 15 through flange connection, and the lower extreme of magnetism filters the gulf pipe 15 is the discharge end, and the discharge end is equipped with the ooff valve, transition solenoid 16 has been cup jointed on the outside upper portion of magnetism filters the gulf pipe 15, high pulse solenoid 17 has been cup jointed to the outside middle part and the lower part of magnetism filters the gulf pipe 15, one set of, frequency 0-200Hz, current 0-50A; a set of 90-degree magnetic filtering bent pipes 15 are adopted, wherein the positive bias voltage of the bent pipes adopts a pulse type, the frequency is 20-100Hz, and the voltage is 10-30V; the bent pipe magnetic field adopts three coils, the transition coil adjacent to the anode cylinder is a strong pulse coil, the frequency is 20-80Hz, and the current is 0-20A; the middle coil is a direct current coil 0-5A, the lower end of the magnetic filtering bent pipe 15 is connected with the vacuum chamber shell, the high pulse focusing coil is connected with the vacuum chamber shell 1, the current is 30-200A, the frequency is 30-300Hz, the transition layer is prepared by using a vacuum cathode arc deposition system, and the deposition system takes a metal target as a cathode. The metal ion injection flange interface 2 is connected with the ion generating device 18 through the connecting flange 19, the ion generating device 18 comprises an ion injection cathode target 181, an auxiliary anode plate 182, a leading-out electrode, an accelerating electrode 183 and a focusing electrode 184, the ion injection cathode target 181 is connected with a first power supply in series through a lead, the auxiliary anode plate 182 is connected with a second power supply and a resistor in series, the second power supply is connected with the resistor in parallel, the resistor is connected with the accelerating electrode 183 and the focusing electrode 184, and the first molecular pump flange interface 1, the metal ion injection flange interface 2, the sample introduction flange interface 3, the magnetic filtration deposition flange interface 4, the second molecular pump flange interface 5, the heating pipe flange interface 6 and the vacuumizing pipeline connecting flange 8 are all communicated with the vacuum chamber shell 9 through pipelines and are respectively provided with switch valves on the pipelines.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.