阅读说明：本技术 物理气相沉积腔室和物理气相沉积设备 (Physical vapor deposition chamber and physical vapor deposition equipment ) 是由 郭宏瑞 李冰 黄其伟 于 2019-11-04 设计创作，主要内容包括：本申请公开了一种物理气相沉积腔室和物理气相沉积设备。该物理气相沉积腔室包括,腔室本体,在所述腔室本体内设置有上电极组件,所述上电极组件包括用于承载磁控管的底板组件,与所述底板组件间隔叠置的背板,以及将所述底板组件与所述背板相连的连接组件,所述连接组件包括连接栓,所述连接栓的栓头与所述底板组件相连,栓杆与所述背板螺纹连接。在使用这种物理气相沉积腔室时,可通过调节连接栓的栓杆与背板的连接长度,就可以实现调节底板组件的位置。由此,可根据要求或实际情况方便地调节底板组件与靶材之间的靶磁间隙的尺寸。(The application discloses a physical vapor deposition chamber and a physical vapor deposition device. The physical vapor deposition chamber comprises a chamber body, wherein an upper electrode assembly is arranged in the chamber body, the upper electrode assembly comprises a bottom plate assembly for bearing a magnetron, a back plate which is overlapped with the bottom plate assembly at intervals, and a connecting assembly for connecting the bottom plate assembly with the back plate, the connecting assembly comprises a connecting bolt, the bolt head of the connecting bolt is connected with the bottom plate assembly, and a bolt rod is in threaded connection with the back plate. When the physical vapor deposition chamber is used, the position of the bottom plate assembly can be adjusted by adjusting the connecting length of the bolt rod of the connecting bolt and the back plate. Therefore, the size of the target magnetic gap between the bottom plate assembly and the target can be conveniently adjusted according to requirements or actual conditions.)

1. The physical vapor deposition chamber is characterized by comprising a chamber body, wherein an upper electrode assembly is arranged in the chamber body and comprises a bottom plate assembly for bearing a magnetron, a back plate which is overlapped with the bottom plate assembly at intervals, and a connecting assembly for connecting the bottom plate assembly and the back plate,

the connecting assembly comprises a connecting bolt, the bolt head of the connecting bolt is connected with the bottom plate assembly, and the bolt rod is in threaded connection with the back plate.

2. The physical vapor deposition chamber of claim 1, wherein the connection assembly is plural in number and is spaced apart from the magnetron.

3. The physical vapor deposition chamber of claim 2, wherein the head of the coupling pin is rotatably coupled to the base plate assembly.

4. The physical vapor deposition chamber of claim 3, wherein the head of the connection bolt is configured as a convex spherical surface, and a ball seat adapted to the convex spherical surface is configured on the bottom plate assembly.

5. The physical vapor deposition chamber of claim 4, wherein the base plate assembly comprises a base plate body on which the ball seat and a through hole communicating with the ball seat are formed, a convex spherical surface of the connection pin is fitted in the ball seat, and the pin rod protrudes from the through hole, and a diameter of the convex spherical surface is larger than a diameter of the through hole.

6. The physical vapor deposition chamber of claim 5, wherein the base plate assembly further comprises a fixture module having a concave spherical surface that mates with the convex spherical surface, the fixture module being secured to the base plate body and the concave spherical surface mating with the convex spherical surface.

7. The physical vapor deposition chamber of claim 6, wherein a recess is formed on the bottom plate body, the ball seat is formed on a bottom surface of the recess, the stationary module is embedded in the recess, and a surface of the stationary module is flush with a surface of the bottom plate body.

8. The physical vapor deposition chamber of claim 6 or 7, wherein an operation hole reaching the convex spherical surface is configured on the fixed module, and an operation slot is configured on the convex spherical surface corresponding to the operation hole.

9. The physical vapor deposition chamber of claim 8, wherein the stationary module and the base plate body are fixedly coupled by screws.

10. A physical vapor deposition apparatus comprising the physical vapor deposition chamber according to any one of claims 1 to 9.

Technical Field

The application relates to the technical field of semiconductor manufacturing, in particular to a physical vapor deposition chamber. The application also relates to a physical vapor deposition apparatus comprising such a physical vapor deposition chamber.

Background

In semiconductor integrated circuit manufacturing, physical vapor deposition equipment is commonly used to fabricate a variety of different metal layers and related material layers, with magnetron sputtering equipment being the most widely used.

In a chamber of a magnetron sputtering device, a magnetron mounting assembly and a target bearing assembly for bearing a target are provided. The magnetron mounting assembly is positioned adjacent to the target bearing assembly to apply a magnetic force to atoms escaping the target to drive the atoms to a predetermined deposition location. A target magnetic gap exists between the magnetron mounting assembly and the target bearing assembly, so that the magnetic field force can be adjusted by adjusting the target magnetic gap, and atoms can be well formed into a film at a preset deposition position.

Disclosure of Invention

A first aspect of the invention provides a physical vapor deposition chamber comprising: the magnetron sputtering chamber comprises a chamber body, wherein an upper electrode assembly is arranged in the chamber body and comprises a bottom plate assembly for bearing a magnetron, a back plate which is overlapped with the bottom plate assembly at intervals, and a connecting assembly for connecting the bottom plate assembly with the back plate, wherein the connecting assembly comprises a connecting bolt, the bolt head of the connecting bolt is connected with the bottom plate assembly, and a bolt rod is in threaded connection with the back plate.

In one embodiment, the connecting assembly is plural in number and is spaced apart from the magnetron.

In one embodiment, the head of the connecting bolt is rotatably connected to the base plate assembly.

In one embodiment, the head of the connecting bolt is configured as a convex spherical surface, and a ball seat adapted to the convex spherical surface is configured on the base plate assembly.

In one embodiment, the base plate assembly includes a base plate body on which the ball seat and a through hole communicating with the ball seat are formed, a convex spherical surface of the connection pin is fitted in the ball seat, and the pin rod protrudes from the through hole, and a diameter of the convex spherical surface is larger than a diameter of the through hole.

In one embodiment, the base plate assembly further comprises a fixing module having a concave spherical surface fitted with the convex spherical surface, the fixing module being fixed on the base plate body and the concave spherical surface being fitted with the convex spherical surface.

In one embodiment, a recess is formed on the base plate body, the ball seat is formed on a bottom surface of the recess, the fixing module is embedded in the recess, and a surface of the fixing module is flush with a surface of the base plate body.

In one embodiment, an actuating opening is formed in the fastening module for access to the convex spherical surface, and an actuating groove is formed in the convex spherical surface in a manner corresponding to the actuating opening.

In one embodiment, the fixing module and the base plate main body are fixedly connected by a screw.

In one embodiment, the screws are plural in number and are evenly spaced circumferentially around the ball seat.

A second aspect of the invention proposes a physical vapor deposition apparatus characterized by comprising a physical vapor deposition chamber according to the above.

Compared with the prior art, the invention has the following beneficial effects: when the physical vapor deposition chamber is used, a user can adjust the position of the bottom plate assembly by adjusting the connection length of the bolt rod of the connection bolt and the back plate. Therefore, the size of the target magnetic gap between the bottom plate assembly and the target can be conveniently adjusted according to requirements or actual conditions.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:

FIG. 1 schematically illustrates a physical vapor deposition chamber according to one embodiment of the present application.

FIG. 2 schematically illustrates a simplified diagram of an upper electrode assembly in accordance with an embodiment of the present application.

Fig. 3 is a schematic view of fig. 2 in the direction of a.

Fig. 4 schematically shows the structure of the connecting assembly.

Fig. 5 is a schematic view of fig. 4 in the direction of B.

FIG. 6 schematically illustrates a physical vapor deposition apparatus according to an embodiment of the present application.

Figures 7a, 7b and 7c schematically show a schematic view of the adjustment of the magnetron device components during use of the physical vapour deposition apparatus.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Fig. 1 schematically shows a physical vapor deposition chamber 1 (hereinafter, simply referred to as chamber 1) according to an embodiment of the present application.

As shown in fig. 1, the chamber 1 includes a chamber body 100, an upper electrode assembly 200 disposed within the chamber body 100, and a target support plate 300. The upper electrode assembly 200 includes a bottom plate assembly 201 and a back plate 202 stacked and connected to the bottom plate assembly 201 at a spacing. The base plate assembly 201 is used to carry a magnetron 203. The target support plate 300 is disposed on a side of the base plate assembly 201 facing away from the backing plate 202. The target 302 is mounted on the side of the target support plate 300 facing away from the base plate assembly 201.

After the target 302 is mounted on the target support plate 300, a target magnetic gap 303 is formed between the target support plate 300 and the magnetron 203. In the present version, the target magnetic gap 303 can be adjusted to an appropriate size by adjusting the size of the gap 204 (shown in FIG. 2) between the backing plate assembly 201 and the backing plate 202.

The chamber 1 further comprises a motor 11, and other components such as a liner 12, a cover plate 13, and a deposition ring 14, which are less related to the inventive concept of the present application, are prevented from contaminating the internal environment of the chamber 1 with atoms, and are not described again.

The upper electrode assembly 200 is described in detail below.

As shown in fig. 2, the upper electrode assembly 200 includes: a base plate assembly 201 carrying a magnetron 203, a backing plate 202 spaced from the base plate assembly 201 and stacked, and a connecting assembly 205 connecting the base plate assembly 201 to the backing plate 202. The connecting assembly 205 includes a connecting bolt 206, a bolt head 207 of the connecting bolt 206 is connected with the bottom plate assembly 201, and a bolt rod 208 is in threaded connection with the back plate 202.

Thus, when the chamber 1 (or the physical vapor deposition apparatus 6 including the chamber 1) according to the present application is used, the position of the base plate assembly 201 relative to the backing plate 202 can be adjusted by adjusting the connection length of the pin rod 208 of the connection pin 206 and the backing plate 202, so that the size of the target magnetic gap 303 can be conveniently adjusted. In a specific embodiment, a threaded hole 209 is formed in the back plate 202, and a screw thread adapted to the threaded hole 209 is formed on the pin 208 of the connection pin 206, so that the pin 208 of the connection pin 206 and the threaded hole 209 can be screwed together and easily adjusted.

In one embodiment, as shown in FIG. 3, the connection assembly 205 is plural in number and is spaced apart from the magnetron 203. In this way, the plurality of connection members 205 more stably connect the backing plate member 201 and the backing plate 202 together, and the target magnetic gap 303 is kept constant without adjusting the connection members 205 (or the connection pins 206), thereby contributing to providing a stable magnetic field and thus to good film formation. In one specific embodiment, the number of connecting members 205 is six, whereby the backplane assembly 201 and the backplane 202 are connected together by six spaced apart connecting bolts. It should be appreciated that each of these linkage assemblies 205 need to be addressed or adjusted when adjusting the target magnetic gap 303.

In one embodiment, the head 207 of the connecting bolt 206 is rotatably connected to the base plate assembly 201. Thus, in the case that the number of the connection assemblies 205 (or the connection bolts 206) is plural, when the distance 204 between the bottom plate assembly 201 and the back plate 202 is not equidistant, by adjusting the installation length of one connection bolt 206 (for example, the connection bolt M1 in fig. 3) in the back plate 202, the bottom plate assembly 201 can rotate around the bolt head 207 of the other connection bolt 206 (for example, the connection bolts M2 and M3 in fig. 3), and therefore the bottom plate assembly 201 can be raised or lowered by the connection bolt M1, so as to adjust the distance between the bottom plate assembly 201 and the back plate 202 to be equidistant (the above adjustment process is referred to as leveling of the magnetron 203). It will be appreciated that during the leveling of the magnetron 203, one or more of the connection pins 206 may need to be adjusted; in addition, a gauge, such as a vernier caliper, may be used to measure the distance 204 between the base plate assembly 201 and the backing plate 202 to speed up the leveling of the magnetron 203.

As also shown in fig. 2 or 4, the head 207 of the connecting bolt 206 is configured as a convex spherical surface 223, and a ball seat 210 adapted to the convex spherical surface 223 is configured on the base plate assembly 201. Thus, the connection peg 206 is connected to the bottom plate assembly 201 by a ball connection. The ball connection allows universal rotation, further facilitating the leveling of the magnetron 203. It should be understood that the convex spherical surface 223 may be a full spherical surface or a partial spherical surface; accordingly, the ball seat 210 may be entirely spherical or partially spherical.

In a specific embodiment, the base plate assembly 201 includes a base plate body 211, a ball seat 210 and a through hole 212 communicating with the ball seat 210 are formed on the base plate body 211, a convex spherical surface 223 of the connection pin 206 is fitted in the ball seat 210, and the pin rod 208 protrudes from the through hole 212, and the diameter of the convex spherical surface 223 is larger than that of the through hole 212. The connecting peg 20 is generally ball screw-shaped as a whole. Thus, in the assembled state of the bottom plate assembly 201 and the back plate 202, the head 207 of the connection pin 206 can be stably engaged in the ball seat 210 without coming out of the ball seat 210 through the through hole 212, so that the bottom plate assembly 201 is stably mounted below the back plate 202 by the connection pin 206.

As also shown in fig. 4, the floor assembly 201 further includes a fixed module 214 having a concave spherical surface 213 that mates with the stud head 207 (or convex spherical surface 223). The fixing block 214 is fixed on the base plate body 211 and the concave spherical surface 213 is fitted to the convex spherical surface 223. Thus, the concave spherical surface 213 and the ball seat 210 together surround the bolt head 207, so that the connection of the connection bolt 206 to the base plate body 211 is more stable. In addition, the fixing module 214 also makes the assembly of the base plate body 211 more convenient. For example, when assembling the base plate body 211, the stem 208 of the connecting bolt 206 is first passed through the through-hole 212 and the head 207 is compliantly seated in the ball seat 210; the fixing module 214 is then fixed to the base plate body 211 and the concave spherical surface 213 is fitted with the plug head 207. Thus, the fixing module 214, the chassis main body 211 and the connection pins 206 are formed as a single body (i.e., the chassis assembly 201 is formed). The backplane assembly 201 is then mounted as a unit to the backplane 202 by the studs 208 connecting the studs 206. In this process, the fixing of the connection pins 206 by the fixing modules 214 prevents the connection pins 206 from being separated from the board main body 211, thereby facilitating the assembly of the board assembly 201. It is understood that other devices, such as devices for magnetron sputtering, may also be present on the base plate body 211 and will not be described in detail herein.

An actuating hole 221 is formed in the fixed module 214 for access to the convex spherical surface 223, and an actuating groove 222 is formed in the convex spherical surface 223 in correspondence to the actuating hole 221. In this way, with the bolt head 207 of the connection bolt 206 engaged with the concave spherical surface 213 of the fixing module 214, the operator can still operate the convex spherical surface 223 via the operation hole 221, thereby performing leveling of the magnetron 203 or adjusting the distance between the bottom plate assembly 201 (e.g., the bottom plate main body 211) and the back plate 202. For example, an operator may use a screwdriver through the operation hole 221 and engage with the operation slot 222 to screw the connection pin 206, thereby achieving leveling of the magnetron 203.

In a specific embodiment, a recess 215 is formed on the base plate body 211, the ball seat 210 is formed on a bottom surface of the recess 215, the fixing module 214 is embedded in the recess 215, and a surface 217 of the fixing module 214 is flush with a surface 218 of the base plate body 211. Thus, the surface 218 of the base plate body 211 together with the surface 217 of the fixing module 214 form a substantially plane as a whole, which facilitates the arrangement of various devices, such as the magnetron 203, on the base plate body 211.

In one particular embodiment, the fixing module 214 and the base plate body 211 are fixedly coupled by screws 219. More specifically, as shown in fig. 5, the number of screws 219 is plural and arranged at even intervals in the circumferential direction around the operation hole 220. In another specific embodiment, the screws 219 are four in number and are evenly circumferentially spaced around the access hole 220. Thus, the fixing module 214 can be stably mounted on the chassis main body 211. It should also be appreciated that while fig. 5 shows the surface 217 of the stationary module 214 as being generally square, it may be virtually any other suitable shape, such as rectangular, diamond, circular, etc.

Fig. 6 schematically shows a physical vapor deposition apparatus 6 according to an embodiment of the present application. The physical vapour deposition apparatus 6 comprises a physical vapour deposition chamber 1 according to the above. Further, a vacuum pumping device 610 is included. Within the physical vapor deposition chamber 1, a susceptor 602 may also be provided that carries the wafer 601. During sputtering, atoms that escape from the target 302 eventually deposit onto the wafer 601 and form a film.

The backing plate assembly 201 may be adjusted in a direction away from the target 302 at intervals as the target 302 is consumed. As shown in fig. 7a to 7c, in the initial state (fig. 7a), the target gap 303 between the magnetron 203 on the base plate assembly 201 and the target support plate 300 is D1, and the distance between the erosion surface 701 of the target 302 and the magnetron 203 is appropriate. After the target 302 has been in use for a while, the target magnetic gap 303 remains at D1, and the distance between the erosion surface 701 of the target 302 and the magnetron 203 becomes smaller due to the constant escape of atoms from the target 302. In this case, the magnetic field 710 at the erosion surface 701 becomes larger in strength, which is detrimental to the effective utilization of the target 302 (see fig. 7 b). By adjusting the backing plate assembly 201 toward the backing plate 202 (i.e., away from the target 302), the target magnetic gap 303 becomes D2, with D2 being greater than D1, so that the distance between the erosion surface 701 of the target 302 and the magnetron 203 is again appropriate (see FIG. 7 c). Therefore, the magnetic field intensity at the erosion surface of the target 302 can be always kept within a proper range, so as to avoid that the erosion speed of the target 302 is faster and faster due to the fact that the magnetic field intensity at the erosion surface is larger and larger as the target 302 is consumed. This contributes to an increase in the effective utilization rate of the target 302.

In addition, the magnetron 203 is leveled, so that the situation that the magnetic field intensity of the erosion surface 701 of the target 302 is different can be avoided, the probability of uneven consumption of the target 302 is reduced, and the effective utilization rate of the target 302 is improved.

The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.