阅读说明：本技术 一种高利用率高速率的靶材 (Target material with high utilization rate and high speed ) 是由 施玉良 徐文斌 于 2019-07-19 设计创作，主要内容包括：本发明涉及一种高利用率高速率的靶材,所述的靶材结构包括靶材端头板和中间板,所述的靶材端头板比中间板厚。与现有技术相比,本发明结构简单且可以有效节约生产成本,在不影响生产工艺、产品质量下立竿见影的提高靶材利用率。(The invention relates to a target with high utilization rate and high speed, which comprises a target end plate and a middle plate, wherein the target end plate is thicker than the middle plate. Compared with the prior art, the invention has simple structure, can effectively save the production cost, and can improve the utilization rate of the target material in a real time without influencing the production process and the product quality.)

1. The target structure comprises a target end plate and a middle plate, and is characterized in that two ends of the target are provided with protruding end plates.

2. A high utilization and high rate target according to claim 1, wherein the target end plate is 0.2-11 mm thicker than the intermediate plate.

3. A high utilization and high rate target according to claim 1, wherein the target end plate and the intermediate plate are in a rounded ramp transition.

4. A high usage and high rate target according to claim 3, wherein the circular slope of the slope is an elliptical slope.

Technical Field

The invention belongs to the field of magnetron sputtering coating, particularly relates to the field of glass coating, and relates to a target material structure for improving the utilization rate of a target material.

Background

Magnetron sputtering targets can be divided into two types of cylindrical targets and planar targets, wherein the main principle of the planar target magnetron sputtering technology is as follows: simultaneously, a magnetic field (50-200 mT, which can obviously affect the movement of electrons but not the movement of ions) and an electric field (negative bias, about hundreds of V) with certain strength are applied, plasma (mainly electrons) can be restricted near a target surface (non-uniform plasma is formed), the collision probability is increased, and the ionization efficiency is improved, so that the arc starting/glow discharge maintenance can be realized under lower working air pressure (0.1-10 Pa) and voltage, and the bombardment of electrons on a substrate is reduced, thereby being beneficial to realizing low-temperature deposition; on the other hand, the non-uniform plasma also essentially determines the non-uniform etching of the target surface and the spatial non-uniformity of the flow rate (roughly expressed as the film deposition rate) and the energy distribution of the deposited particles, but the required parameters can be improved and compensated to a certain extent or can be reached to the greatest extent by optimizing the measures of the structure of the magnetron target, the distribution of the magnetic field configuration strength, the movement of the substrate and the like.

The closed magnetic field in front of the magnetron cathode enables plasma to be confined below closed magnetic lines, which inherently determines the non-uniform etching of the surface of the planar target, i.e. the lower utilization rate of the planar target, and the spatial non-uniform distribution of the flow and the energy of sputtered deposited particles, which leads to the spatial non-uniform distribution of the thickness and the performance of the deposited film.

Generally, the target utilization rate of a planar cathode is only 20% -25%, the cost of the target is higher in the magnetron sputtering coating cost, and how to improve the target utilization rate is a problem to be solved.

Fig. 1 shows a target structure of a planar cathode, which is widely used at present, and has a uniform thickness, and after non-uniform plasma etching of a target surface, a residual target after the target is used up is shown in fig. 2, which results in a great amount of waste of the target.

After the analysis of the plane residual target under the replacement of the magnetron sputtering coating, the end plates at two ends of the plane target are etched and penetrated faster than the middle plate and cannot be used continuously, but the middle plate which accounts for most of the weight of the target still has the thickness of 5-7 mm and can be used, and finally the whole pair of plane targets cannot be used.

Chinese patent 200310105218.5 discloses a magnetron sputtering target capable of improving the utilization rate of a target material, which adopts a moving magnet technology, and makes the magnet move in the sputtering coating process by advancing a common magnetron sputtering planar target magnet, so that the etching area of the target material surface is wider, and the utilization rate of the planar target material can be improved to a certain extent, but the technology is not easy to control and easily affects the sputtering uniformity, and the structure is relatively complex and not easy to widely popularize.

Chinese patent 200920204040.2 discloses a target structure in a magnetron sputtering coating device, which changes the traditional planar target into thick in the middle and thin on both sides, the middle of the target is made into a plane, and both sides are made into inclined planes, which can improve the utilization rate of the planar target to a certain extent, but it still can not solve the problem that the end plates at both ends of the planar target are etched and penetrated faster than the middle plate.

Disclosure of Invention

The invention aims to overcome the defects in the prior art and provide a target material structure which has a simple structure, can effectively save production cost and can improve the utilization rate of the target material in an instant manner without influencing the production process and the product quality.

The purpose of the invention can be realized by the following technical scheme: a target structure for improving the utilization rate of a target comprises a target end plate and a middle plate, and is characterized in that the target end plate is thicker than the middle plate.

The thickness of the target end plate is 0.1-10 mm larger than that of the middle plate.

The target end plate and the middle plate are in transition connection by adopting an inclined plane.

The transition angle of the inclined plane is 30-90 degrees.

The transition angle of the inclined plane is 45 degrees.

Compared with the prior art, the invention increases the thickness of the end plate at two ends of the planar target, has simple structure and easy processing, leads the end plate and the middle plate to be consumed at the same time, adopts the target with the structure to carry out magnetron sputtering coating, has high utilization rate of the target, can improve the utilization rate of the planar target from 20-25 percent to 30-35 percent, and can be widely applied to the field of magnetron sputtering coating.

Drawings

Fig. 1 is a structural view of a target end plate provided in the prior art;

FIG. 2 is a structural diagram of a target intermediate plate provided in the prior art

FIG. 3 is a structural diagram of a head plate after magnetron sputtering coating of a target provided by the prior art;

FIG. 4 is a structural diagram of a middle plate of a target material provided by the prior art after magnetron sputtering coating;

fig. 5 is a structural view of a target end plate provided by the present invention;

FIG. 6 is a structural diagram of a target intermediate plate according to the present invention;

FIG. 7 is a structural diagram of a terminal plate after magnetron sputtering coating of the target material provided by the invention;

FIG. 8 is a structural diagram of a middle plate of the target material provided by the present invention after magnetron sputtering coating;

in the figure, 1 is an end plate, 2 is a middle plate, 3 is a thickened part, and 4 is a residual part.

Detailed Description

The invention is described in detail below with reference to the figures and specific embodiments.

As shown in fig. 3, in the target structure in the magnetron sputtering coating equipment, the target end plate is thicker than the middle plate, the joint of the end plate and the middle plate adopts an inclined plane transition, the inclined plane transition angle is 30-90 degrees, and preferably, the inclined plane transition angle is 45 degrees.

The invention has the advantages that: compared with the target material structure with uniform equal thickness in the prior art, the invention increases the thickness of the end plates 1 at two ends of the planar target material, so that the end plates 1 and the middle plate 2 are consumed simultaneously, and the target material adopting the structure is used for magnetron sputtering coating, so that the utilization rate of the target material is high, and the utilization rate of the planar target material can be improved from 20-25% to 30-35%, and the target material can be widely applied to the field of magnetron sputtering coating.