阅读说明：本技术 静电吸盘系统、成膜装置和方法、吸附方法及电子器件的制造方法 (Electrostatic chuck system, film forming apparatus and method, adsorption method, and method for manufacturing electronic device ) 是由 柏仓一史 石井博 于 2019-04-09 设计创作，主要内容包括：本发明提供静电吸盘系统、成膜装置和方法、吸附方法及电子器件的制造方法。静电吸盘系统用于吸附被吸附体,其特征在于,包括：静电吸盘,具有电极部和吸附所述被吸附体的吸附面；电位差施加部,对所述电极部施加电位差；磁力产生部,被配置在所述静电吸盘的所述吸附面的相反侧；以及驱动机构,使所述磁力产生部在包含与所述静电吸盘的所述吸附面平行的第1方向在内的方向上移动。(The invention provides an electrostatic chuck system, a film forming apparatus and method, an adsorption method, and a method for manufacturing an electronic device. The electrostatic chuck system is used for adsorbing an adsorbed body, and is characterized by comprising: an electrostatic chuck having an electrode portion and an adsorption surface that adsorbs the adherend; a potential difference application unit that applies a potential difference to the electrode unit; a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck; and a drive mechanism that moves the magnetic force generation unit in a direction including a 1 st direction parallel to the suction surface of the electrostatic chuck.)

1. An electrostatic chuck system for adsorbing an adsorbed body is characterized in that,

the electrostatic chuck system includes:

an electrostatic chuck having an electrode portion and an adsorption surface that adsorbs the adherend;

a potential difference application unit that applies a potential difference to the electrode unit;

a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck; and

and a drive mechanism for moving the magnetic force generation unit in a direction including a 1 st direction parallel to the suction surface of the electrostatic chuck.

2. The electrostatic chuck system of claim 1,

the area of the magnetic force generating part projected onto the adsorption surface is smaller than the area of the adsorption surface.

3. The electrostatic chuck system of claim 2,

the length of the magnetic force generating part in the 1 st direction parallel to the adsorption surface when projected to the adsorption surface is smaller than the length of the adsorption surface in the 1 st direction,

the drive mechanism moves the magnetic force generating portion in the 1 st direction.

4. The electrostatic chuck system of claim 3,

the length of the magnetic force generating part in the 1 st direction projected onto the suction surface is 1/2 or less of the length of the suction surface in the 1 st direction.

5. The electrostatic chuck system of claim 1,

the 1 st direction is parallel to a width direction of the suction surface of the electrostatic chuck.

6. The electrostatic chuck system of claim 5,

the drive mechanism moves the magnetic force generating portion from the peripheral portion of one long side of the adsorption surface toward the peripheral portion of the other long side along the 1 st direction.

7. The electrostatic chuck system of claim 1,

the 1 st direction is parallel to a longitudinal direction of the suction surface of the electrostatic chuck.

8. The electrostatic chuck system of claim 7,

the drive mechanism moves the magnetic force generating portion from the peripheral portion of one short side of the suction surface toward the peripheral portion of the other short side along the 1 st direction.

9. The electrostatic chuck system of claim 1,

the potential difference applying unit applies a 1 st potential difference for attracting a 1 st adherend and a 2 nd potential difference for attracting a 2 nd adherend via the 1 st adherend.

10. The electrostatic chuck system of claim 9,

the magnetic force generating unit is provided movably between a magnetic force applying position for applying a magnetic force to the 2 nd adherend and a retracted position for applying a magnetic force weaker than the magnetic force applied at the magnetic force applying position to the 2 nd adherend.

11. A film forming apparatus for forming a film on a substrate with a mask interposed therebetween,

the film forming apparatus includes an electrostatic chuck system for adsorbing a substrate as a 1 st adherend and a mask as a 2 nd adherend,

the electrostatic chuck system of any one of claims 1 to 10.

12. An adsorption method for adsorbing an object to be adsorbed,

the adsorption method comprises the following steps:

a 1 st adsorption stage of applying a 1 st potential difference to an electrode portion of the electrostatic chuck to adsorb a 1 st adsorbed object;

an attraction stage for attracting at least a part of the 2 nd object via the 1 st object by a magnetic force from a magnetic force generator; and

and a 2 nd adsorption stage in which the magnetic force generation unit is moved in a direction including a direction parallel to an adsorption surface of the electrostatic chuck while applying a 2 nd potential difference, which is the same as or different from the 1 st potential difference, to the electrode unit, and the electrostatic chuck adsorbs the 2 nd adherend via the 1 st adherend.

13. The adsorption method according to claim 12,

in the 2 nd suction stage, the 2 nd adherend is brought into contact with the 1 st adherend from a portion of the 2 nd adherend to be attracted in the suction stage, and the 2 nd adherend is sucked by the electrostatic chuck through the 1 st adherend.

14. The adsorption method according to claim 12,

after the 2 nd adsorption stage, a magnetic force reduction stage of making the magnetic force applied to the 2 nd adsorbate lower than the magnetic force in the attraction stage is further included.

15. The adsorption method according to claim 14,

the attraction stage includes a stage of moving the magnetic force generating portion to a magnetic force applying position where at least a part of the 2 nd adherend can be attracted by a magnetic force,

the magnetic force reduction step includes a step of moving the magnetic force generation unit to a retracted position where the magnetic force applied to the 2 nd adherend from the magnetic force application position is reduced.

16. The adsorption method according to claim 12,

in the suction stage, the 2 nd object is locally sucked.

17. A film forming method for forming a film of a vapor deposition material on a substrate through a mask,

the film forming method includes:

a step of carrying the mask into the vacuum container;

a step of carrying a substrate into the vacuum chamber;

a 1 st adsorption stage of applying a 1 st potential difference to an electrode portion of the electrostatic chuck to adsorb the substrate to the electrostatic chuck;

an attraction step of attracting at least a part of the mask with a magnetic force from a magnetic force generating unit via the substrate;

a 2 nd attracting step of moving the magnetic force generating unit in a direction including a direction parallel to an attracting surface of the electrostatic chuck while applying a 2 nd potential difference, which is the same as or different from the 1 st potential difference, to the electrode unit, and attracting the mask to the electrostatic chuck via the substrate; and

and a step of evaporating a vapor deposition material in a state where the substrate and the mask are attracted to the electrostatic chuck, and forming a film of the vapor deposition material on the substrate through the mask.

18. The film forming method according to claim 17,

in the second suction stage, the mask is brought into contact with the substrate from the portion of the mask attracted in the first suction stage, and the electrostatic chuck sucks the mask through the substrate.

19. The film forming method according to claim 17,

after the 2 nd adsorption stage, a magnetic force reduction stage of making the magnetic force applied to the mask lower than the magnetic force of the attraction stage is further included.

20. The film forming method according to claim 19,

the attracting step includes a step of moving the magnetic force generating portion to a magnetic force applying position capable of attracting at least a part of the mask by a magnetic force,

the magnetic force reduction step includes a step of moving the magnetic force generation unit to a retracted position where the magnetic force applied to the mask from the magnetic force application position is reduced.

21. The film forming method according to claim 17,

in the attraction stage, the mask is locally attracted.

22. A method of manufacturing an electronic device, characterized in that,

an electronic device manufactured by using the film formation method according to any one of claims 17 to 21.

Technical Field

The invention relates to an electrostatic chuck system, a film forming apparatus and method, an adsorption method, and a method for manufacturing an electronic device.

Background

In the manufacture of an organic EL display device (organic EL display), when forming an organic light-emitting element (organic EL element; OLED) constituting the organic EL display device, a vapor deposition material evaporated from a vapor deposition source of a film formation device is vapor-deposited onto a substrate through a mask on which a pixel pattern is formed, thereby forming an organic layer or a metal layer.

In a film forming apparatus of an upward vapor deposition method (upward deposition), a vapor deposition source is provided at a lower portion of a vacuum chamber of the film forming apparatus, and a substrate is disposed at an upper portion of the vacuum chamber and vapor-deposited on a lower surface of the substrate. In the vacuum chamber of such a deposition apparatus of the upward vapor deposition method, only the peripheral portion of the lower surface of the substrate is held by the substrate holder, and therefore the substrate is deflected by its own weight, which is one of the factors that decrease the deposition accuracy. In a film forming apparatus of a system other than the vapor deposition system, there is a possibility that the substrate is deflected by its own weight.

As a method for reducing the deflection due to the self weight of the substrate, a technique using an electrostatic chuck is being studied. That is, by attracting the entire upper surface of the substrate with the electrostatic chuck, the deflection of the substrate can be reduced.

Patent document 1 (korean patent laid-open publication No. 2007 and 0010723) proposes a technique of attracting a substrate and a mask by an electrostatic chuck.

Patent document 1: korean patent laid-open publication No. 2007 and 0010723

However, in the conventional technique, when the mask is sucked by the electrostatic chuck through the substrate, there is a problem that wrinkles remain on the mask after the suction.

Disclosure of Invention

The purpose of the present invention is to satisfactorily adhere both a 1 st adherend and a 2 nd adherend to an electrostatic chuck.

Means for solving the problems

An electrostatic chuck system according to claim 1 of the present invention is an electrostatic chuck system for adsorbing an object to be adsorbed, the electrostatic chuck system including: an electrostatic chuck having an electrode portion and an adsorption surface that adsorbs the adherend; a potential difference application unit that applies a potential difference to the electrode unit; a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck; and a drive mechanism that moves the magnetic force generation unit in a direction including a 1 st direction parallel to the suction surface of the electrostatic chuck.

A film forming apparatus according to claim 2 of the present invention is a film forming apparatus for forming a film on a substrate with a mask interposed therebetween, and is characterized by including an electrostatic chuck system for attracting the substrate as a 1 st object and the mask as a 2 nd object, wherein the electrostatic chuck system is the electrostatic chuck system according to claim 1 of the present invention.

An adsorption method according to claim 3 of the present invention is a method for adsorbing an object to be adsorbed, the adsorption method including: a 1 st adsorption stage of applying a 1 st potential difference to an electrode portion of the electrostatic chuck to adsorb a 1 st adsorbed object; an attraction stage for attracting at least a part of the 2 nd object via the 1 st object by a magnetic force from a magnetic force generator; and a 2 nd adsorption stage of moving the magnetic force generation unit in a direction including a direction parallel to an adsorption surface of the electrostatic chuck while applying a 2 nd potential difference, which is the same as or different from the 1 st potential difference, to the electrode unit, and allowing the electrostatic chuck to adsorb the 2 nd adherend via the 1 st adherend.

A film formation method according to a 4 th aspect of the present invention is a film formation method for forming a film of a vapor deposition material on a substrate through a mask, the film formation method including: a step of carrying the mask into the vacuum container; a step of carrying a substrate into the vacuum chamber; a 1 st adsorption stage of applying a 1 st potential difference to an electrode portion of the electrostatic chuck to adsorb the substrate to the electrostatic chuck; an attraction step of attracting at least a part of the mask with a magnetic force from a magnetic force generating unit via the substrate; a 2 nd attracting step of moving the magnetic force generating unit in a direction including a direction parallel to an attracting surface of the electrostatic chuck while applying a 2 nd potential difference, which is the same as or different from the 1 st potential difference, to the electrode unit, and attracting the mask to the electrostatic chuck via the substrate; and a step of forming a film of the vapor deposition material on the substrate through the mask by evaporating the vapor deposition material in a state where the substrate and the mask are attracted to the electrostatic chuck.

The method for manufacturing an electronic device according to claim 5 of the present invention is characterized in that the film formation method according to claim 4 of the present invention is used to manufacture an electronic device.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, both the 1 st and 2 nd adherends can be favorably adsorbed by the electrostatic chuck without leaving wrinkles.

Drawings

Fig. 1 is a schematic view of a part of an apparatus for manufacturing an electronic device.

FIG. 2 is a schematic view of a film deposition apparatus according to an embodiment of the present invention.

Fig. 3a to 3d are conceptual and schematic views of an electrostatic chuck system according to an embodiment of the present invention.

Fig. 4a to 4c are schematic views showing a method of attracting the substrate and the mask to the electrostatic chuck.

Fig. 5 is a schematic diagram showing an electronic device.

Description of the reference numerals

24: electrostatic chuck

30: electrostatic chuck system

31: potential difference applying part

32: potential difference control unit

33: magnetic force generating part

35: magnetic force generating part driving mechanism

Detailed Description

Preferred embodiments and examples of the present invention will be described below with reference to the accompanying drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like are not particularly limited, and the scope of the present invention is not limited to these.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition. As a material of the substrate, any material such as glass, a film of a polymer material, or a metal can be selected, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. As the vapor deposition material, any material such as an organic material or a metallic material (metal, metal oxide, or the like) may be selected. The present invention is applicable to film forming apparatuses including sputtering apparatuses and CVD (Chemical Vapor Deposition) apparatuses, in addition to the vacuum Vapor Deposition apparatuses described in the following description. The technique of the present invention is particularly applicable to manufacturing apparatuses of organic electronic devices (e.g., organic light-emitting elements, thin-film solar cells), optical members, and the like. Among these, an apparatus for manufacturing an organic light-emitting element, which forms an organic light-emitting element by evaporating a vapor deposition material and depositing the vapor deposition material on a substrate through a mask, is one of preferable application examples of the present invention.

[ manufacturing apparatus for electronic device ]

Fig. 1 is a plan view schematically showing a part of the structure of an apparatus for manufacturing an electronic device.

The manufacturing apparatus of fig. 1 is used for manufacturing a display panel of an organic EL display device for a smart phone, for example. In the case of a display panel for a smartphone, for example, a film for forming an organic EL element is formed on a 4.5 th generation substrate (about 700mm × about 900mm), a 6 th generation substrate having a full size (about 1500mm × about 1850mm), or a half-cut size (about 1500mm × about 925mm), and then the substrate is cut out to produce a plurality of small-sized panels.

The manufacturing apparatus of electronic devices generally includes a plurality of cluster apparatuses 1 and relay devices connected between the cluster apparatuses.

The cluster apparatus 1 includes a plurality of film deposition devices 11 for performing processes (e.g., film deposition) on the substrate S, a plurality of mask storage devices 12 for storing masks M before and after use, and a transfer chamber 13 disposed at the center thereof. As shown in fig. 1, the transfer chamber 13 is connected to the plurality of film deposition apparatuses 11 and the mask stocker 12, respectively.

A transfer robot 14 for transferring the substrate and the mask is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the path chamber 15 of the relay device disposed on the upstream side to the film deposition apparatus 11. Further, the transfer robot 14 transfers the mask M between the film formation device 11 and the mask stocker 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding the substrate S or the mask M is attached to an articulated arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in a vapor deposition source is heated by a heater to be evaporated, and is deposited on a substrate through a mask. The film forming apparatus 11 performs a series of film forming processes such as delivery and delivery of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixation of the substrate S to the mask M, and film formation (vapor deposition).

The mask stocker 12 stores a new mask used in the film forming process in the film forming apparatus 11 and a used mask separately in two cassettes. The transfer robot 14 transfers the used mask from the film deposition apparatus 11 to the cassette of the mask stocker 12, and transfers a new mask stored in another cassette of the mask stocker 12 to the film deposition apparatus 11.

The cluster apparatus 1 is connected to a passage chamber 15 and a buffer chamber 16, the passage chamber 15 transferring the substrate S from the upstream side to the cluster apparatus 1 in the flow direction of the substrate S, and the buffer chamber 16 transferring the substrate S on which the film formation process has been completed in the cluster apparatus 1 to another cluster apparatus on the downstream side. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the upstream path chamber 15 and transfers the substrate S to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) in the cluster apparatus 1. The transfer robot 14 receives the substrate S on which the film formation process has been completed in the cluster apparatus 1 from one of the plurality of film formation apparatuses 11 (e.g., the film formation apparatus 11b), and transfers the substrate S to the buffer chamber 16 connected downstream.

A turning chamber 17 for changing the orientation of the substrate is provided between the buffer chamber 16 and the path chamber 15. A transfer robot 18 is provided in the turning chamber 17, and the transfer robot 18 receives the substrate S from the buffer chamber 16 and transfers the substrate S to the path chamber 15 by rotating the substrate S by 180 °. This makes it possible to easily process the substrates S in the same direction in the upstream cluster device and the downstream cluster device.

The path chamber 15, the buffer chamber 16, and the turning chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices provided on the upstream side and/or the downstream side of the cluster devices include at least one of the path chamber, the buffer chamber, and the turning chamber.

The film forming apparatus 11, the mask stocker 12, the transfer chamber 13, the buffer chamber 16, the turning chamber 17, and the like are maintained in a high vacuum state during the process of manufacturing the organic light emitting element. The path chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

In this embodiment, the structure of the apparatus for manufacturing an electronic device is described with reference to fig. 1, but the present invention is not limited to this, and other types of apparatuses and chambers may be provided, and the arrangement between these apparatuses and chambers may be changed.

The following describes a specific configuration of the film formation apparatus 11.

[ film Forming apparatus ]

Fig. 2 is a schematic diagram showing the structure of the film formation apparatus 11. In the following description, an XYZ rectangular coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed so as to be parallel to a horizontal plane (XY plane) during film formation, the width direction (direction parallel to the short side) of the substrate S is defined as the X direction, and the length direction (direction parallel to the long side) is defined as the Y direction. In addition, the rotation angle around the Z axis is represented by θ.

The film forming apparatus 11 includes a vacuum chamber 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen, and a substrate support unit 22, a mask support unit 23, an electrostatic chuck 24, and a vapor deposition source 25 provided inside the vacuum chamber 21.

The substrate support unit 22 is a member that receives and holds the substrate S conveyed by the conveyance robot 14 provided in the conveyance chamber 13, and is also referred to as a substrate holder.

A mask supporting unit 23 is provided below the substrate supporting unit 22. The mask support unit 23 is a member that receives and holds the mask M transferred by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, a Mask used for manufacturing an organic EL element for a smart phone is a Metal Mask having a Fine opening pattern formed therein, and is also referred to as FMM (Fine Metal Mask).

An electrostatic chuck 24 for attracting and fixing the substrate by an electrostatic attraction is provided above the substrate support unit 22. The electrostatic chuck 24 has a structure in which a circuit such as a metal electrode is embedded in a dielectric (e.g., ceramic material) base body. Electrostatic chuck 24 may be a coulombic force type electrostatic chuck, a johnson rabickel force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. Since the electrostatic chuck 24 is a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, the electrostatic chuck 24 can satisfactorily perform suction. For example, in the case where the electrostatic chuck 24 is a coulomb force type electrostatic chuck, when potentials of plus (+) and minus (-) are applied to the metal electrode, a polarized charge of the opposite polarity to that of the metal electrode is induced to an adherend such as the substrate S through the dielectric base, and the substrate S is attracted and fixed to the electrostatic chuck 24 by the electrostatic attraction therebetween. The electrostatic chuck 24 may be formed of one plate or may be formed to have a plurality of sub-plates. In the case where the electrostatic attraction force is controlled by a single board, a plurality of circuits may be included in the board, and the electrostatic attraction force may be controlled to be different depending on the position in the board.

In the present embodiment, as described later, not only the substrate S (1 st adherend) but also the mask M (2 nd adherend) is sucked and held by the electrostatic chuck 24 before film formation.

That is, in the present embodiment, the substrate S (1 st adherend) placed on the lower side of the electrostatic chuck 24 in the vertical direction is attracted and held by the electrostatic chuck 24 via the substrate S (1 st adherend), and then the mask M (2 nd adherend) placed on the opposite side of the electrostatic chuck 24 via the substrate S (1 st adherend) is attracted and held by the electrostatic chuck 24 via the substrate S (1 st adherend). In particular, when the mask M is attracted by the electrostatic chuck 24 through the substrate S, a part of the mask M is attracted by the magnetic force generating portion 33, and the part of the mask M attracted by the magnetic force of the magnetic force generating portion 33 becomes a starting point of attraction of the electrostatic chuck to the mask M. Further, by moving the magnetic force generating portion 33 in a direction parallel to the suction surface of the electrostatic chuck 24, the progress of suction in that direction can be guided. This will be described later with reference to fig. 3 and 4.

Although not shown in fig. 2, a cooling mechanism (e.g., a cooling plate) for suppressing the temperature rise of the substrate S may be provided on the opposite side of the suction surface of the electrostatic chuck 24 to suppress the deterioration or degradation of the organic material deposited on the substrate S.

The vapor deposition source 25 includes a crucible (not shown) for storing a vapor deposition material to be deposited on a substrate, a heater (not shown) for heating the crucible, a shutter (not shown) for preventing the vapor deposition material from being scattered toward the substrate until the evaporation rate from the vapor deposition source becomes constant, and the like. The vapor deposition source 25 can have various configurations depending on the use such as a point (point) vapor deposition source or a line (linear) vapor deposition source.

Although not shown in fig. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculating unit (not shown) for measuring the thickness of a film deposited on a substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum chamber 21. These actuators and position adjustment mechanisms are constituted by, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for moving up and down (moving in the Z direction) the substrate support unit 22. The mask Z actuator 27 is a driving member for raising and lowering (moving in the Z direction) the mask supporting unit 23. The electrostatic chuck Z actuator 28 is a driving member for moving up and down (Z-direction movement) the electrostatic chuck 24.

The position adjustment mechanism 29 is a driving member for alignment of the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, the Y direction, and θ rotation with respect to the substrate support unit 22 and the mask support unit 23. In the present embodiment, the relative position of the substrate S and the mask M is adjusted by adjusting the position of the electrostatic chuck 24 in the direction X, Y and θ in a state where the substrate S is attracted.

In addition to the above-described drive mechanism, an alignment camera 20 may be provided on the outer upper surface of the vacuum chamber 21, and the alignment camera 20 may be configured to take an image of an alignment mark formed on the substrate S and the mask M through a transparent window provided on the upper surface of the vacuum chamber 21. In the present embodiment, the alignment camera 20 may be provided at a position corresponding to a diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to 4 corners of the rectangle.

The position adjustment mechanism 29 performs alignment for adjusting the position of the substrate S (the 1 st adherend) and the mask M (the 2 nd adherend) by relatively moving the substrate S (the 1 st adherend) and the mask M (the 2 nd adherend) based on the position information of the substrate S (the 1 st adherend) and the mask M (the 2 nd adherend) acquired by the alignment camera 20.

The film deposition apparatus 11 includes a control unit (not shown). The control section has functions of carrying and aligning the substrate S, controlling the vapor deposition source 25, controlling the film formation, and the like. The control unit may be constituted by a computer having a processor, a memory, a storage device, an I/O, and the like, for example. In this case, the function of the control section is realized by the processor executing a program stored in the memory or the storage device. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, a part or all of the functions of the control unit may be constituted by a circuit such as an ASIC or FPGA. Further, the control unit may be provided for each of the film forming apparatuses, or one control unit may control a plurality of film forming apparatuses.

[ Electrostatic chuck System ]

The electrostatic chuck system 30 of the present embodiment will be described with reference to fig. 3a to 3 d.

Fig. 3a is a conceptual block diagram of the electrostatic chuck system 30 according to the present embodiment, fig. 3b is a schematic plan view of the electrostatic chuck 24, and fig. 3c is a schematic plan view of the electrostatic chuck 24 and the magnetic force generating unit 33. Fig. 3d is a schematic view of the magnetic force generating unit driving mechanism 35 for moving the magnetic force generating unit 33.

As shown in fig. 3a, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a potential difference applying unit 31, a potential difference control unit 32, a magnetic force generating unit 33, and a magnetic force generating unit driving mechanism 35.

The potential difference applying unit 31 applies a potential difference for generating an electrostatic attraction force to the electrode portion of the electrostatic chuck 24.

The potential difference control unit 32 controls the magnitude of the potential difference applied from the potential difference application unit 31 to the electrode unit, the application start timing of the potential difference, the maintenance time of the potential difference, the application order of the potential difference, and the like, in accordance with the progress of the adsorption process of the electrostatic chuck system 30 or the film formation process of the film formation apparatus 11. The potential difference control unit 32 can independently control the application of potential differences to a plurality of sub-electrode units 241 to 249 included in an electrode unit of the electrostatic chuck 24, for example, for different sub-electrode units. In the present embodiment, the potential difference control unit 32 is implemented independently of the control unit of the film formation apparatus 11, but the present invention is not limited thereto, and may be unified as the control unit of the film formation apparatus 11.

The electrostatic chuck 24 includes an electrode portion that generates an electrostatic attraction force for attracting an adherend (e.g., the substrate S or the mask M) on the attraction surface, and the electrode portion may include a plurality of sub-electrode portions 241 to 249. For example, as shown in fig. 3b, the electrostatic chuck 24 of the present embodiment includes a plurality of sub-electrode portions 241 to 249 divided along the longitudinal direction (Y direction) of the electrostatic chuck 24 and/or the width direction (X direction) of the electrostatic chuck 24.

Each sub-electrode portion includes an electrode pair 34 to which positive (1 st polarity) and negative (2 nd polarity) potentials are applied in order to generate electrostatic attraction. For example, each electrode pair 34 includes a 1 st electrode 341 to which a positive potential is applied and a 2 nd electrode 342 to which a negative potential is applied.

As shown in fig. 3b, the 1 st electrode 341 and the 2 nd electrode 342 each have a comb shape. In one sub-electrode portion, the comb-teeth portions of the 1 st electrode 341 are alternately arranged so as to face the comb-teeth portions of the 2 nd electrode 342. In this way, by forming the electrodes 341 and 342 such that the comb tooth portions face each other and are staggered with each other, the gap between the electrodes to which different potentials are applied can be narrowed, a large uneven electric field can be formed, and the substrate S can be attracted by a gradient force.

In the present embodiment, the electrodes 341 and 342 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have a comb shape, but the present invention is not limited thereto, and various shapes can be provided as long as electrostatic attraction can be generated between the electrodes and an object to be attracted.

The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to a plurality of sub-electrode portions.

The suction portion is provided so as to be divided in the longitudinal direction (Y-axis direction) and the width direction (X-axis direction) of the electrostatic chuck 24, but is not limited thereto, and may be divided only in the longitudinal direction or the width direction of the electrostatic chuck 24. The plurality of suction portions may be realized by physically having a plurality of electrode portions on one plate, or may be realized by having one or more electrode portions on each of physically divided plates. For example, in the embodiment shown in fig. 3b, each of the plurality of adsorption portions may be implemented so as to correspond to each of the plurality of sub-electrode portions, or one adsorption portion may include a plurality of sub-electrode portions.

That is, by controlling the application of the potential difference to the sub-electrode portions 241 to 249 by the potential difference control portion 32, as will be described later, 3 sub-electrode portions 241, 244, 247 arranged in the direction (Y direction) intersecting the direction (X direction) in which the substrate S is sucked can constitute one sucking portion. The specific physical structure and circuit structure of the plurality of suction portions may be changed as long as the suction portions can independently suck the substrate.

(magnetic force generating part)

The electrostatic chuck system 30 of the present invention includes a magnetic force generating unit 33, and the magnetic force generating unit 33 applies a magnetic force to the mask M in order to control a position of a start point of suction of the mask M and a proceeding direction of suction when the mask M, for example, is sucked by the electrostatic chuck 24 through the substrate S. As shown in fig. 3a, the magnetic force generating unit 33 is disposed on the opposite side of the suction surface of the electrostatic chuck 24, and can be realized by a permanent magnet or an electromagnet.

As shown in fig. 3c, the magnetic force generating unit 33 is preferably formed such that the area of the magnetic force generating unit 33 projected on the suction surface of the electrostatic chuck 24 is smaller than the area of the suction surface.

Thus, the magnetic force generating unit 33 applies a magnetic force to only the mask portion at the position corresponding to the magnetic force generating unit 33, not to the entire mask M at the same time, and selectively attracts the corresponding portion of the mask M toward the electrostatic chuck 24 (see fig. 4 c). That is, the corresponding portion of the mask M is attracted by the magnetic force from the magnetic force generating portion 33 and deformed to be closer to the electrostatic chuck 24 than the other portion. Thus, when a potential difference for attracting the mask M is applied to the electrostatic chuck 24, the corresponding portion of the mask M is first attracted by the electrostatic chuck 24.

The "area of the magnetic force generating portion 33 projected onto the suction surface of the electrostatic chuck 24" referred to herein is an area of the magnetic force generating portion 33 projected onto the suction surface of the electrostatic chuck 24, the portion of the magnetic force generating portion generating a magnetic force attracting the mask M when the mask M is brought into contact with the substrate S in the process of sucking the mask M through the substrate S. Therefore, for example, when the magnetic force generating unit 33 is configured by an electromagnet module having a plurality of regions divided in a plane parallel to the suction surface of the electrostatic chuck 24 and the electromagnet modules of only a partial region are supplied with power to generate a magnetic force when the mask M is brought into contact with the substrate S, the area of the electromagnet modules of the partial region projected onto the suction surface of the electrostatic chuck 24 may be smaller than the area of the suction surface.

Thereafter, when the magnetic force generating unit 33 moves in the direction parallel to the suction surface, the other portions of the mask M are sequentially attracted and deformed to be close to the electrostatic chuck 24 by the movement of the magnetic force generating unit 33, and are sucked to the electrostatic chuck 24 through the substrate S by the potential difference applied to the electrostatic chuck 24. Thereby, the mask M is sequentially attracted from the attraction start point along the moving direction of the magnetic force generating unit 33, and no wrinkle remains after the attraction is completed.

The magnetic force generating unit 33 is preferably formed to be shorter than the length of the suction surface in the 1 st direction (for example, the short side direction and the X direction of the electrostatic chuck 24) parallel to the suction surface of the electrostatic chuck 24. For example, in order to control the position of the start point of the attraction of the mask M and the direction of the advancement of the attraction more precisely, the length of the magnetic force generating unit 33 in the 1 st direction is preferably set to be equal to or less than 1/2 of the length of the attraction surface in the 1 st direction. The length of the magnetic force generating portion 33 in the 1 st direction as used herein means the length of the portion of the magnetic force generating portion 33 having the longest length in the 1 st direction.

When the electrostatic chuck 24 has a plurality of attracting portions, the magnetic force generating portion 33 is preferably provided so as to be equal to or shorter than the length of the attracting portion corresponding to the position of the magnetic force generating portion 33 in the 1 st direction among the plurality of attracting portions.

Preferably, the magnetic force generating portion 33 is formed to be substantially the same as or shorter than the length of the suction surface in the 2 nd direction (for example, the longitudinal direction of the electrostatic chuck 24, the Y direction) which is parallel to the suction surface and intersects the 1 st direction. That is, when the length of the magnetic force generating portion 33 in the 1 st direction is shorter than the length of the suction surface of the electrostatic chuck 24 in the 1 st direction, the length in the 2 nd direction can be made substantially the same as or shorter than the length of the suction surface of the electrostatic chuck 24 in the 2 nd direction, as shown in fig. 3 c. When the length of the magnetic force generating portion 33 in the 2 nd direction is substantially the same as the length of the suction surface in the 2 nd direction, the start point and the traveling direction of the mask suction cannot be controlled in the 2 nd direction, but the start point and the traveling direction of the mask suction can be controlled in the 1 st direction as described above.

In contrast, when the length of the magnetic force generating portion 33 in the 2 nd direction is smaller than the length of the attraction surface in the 2 nd direction, the start point and the traveling direction of the mask attraction can be controlled not only in the 1 st direction but also in the 2 nd direction.

The magnetic force generating unit 33 of the present embodiment is not limited to the configuration in which the length in the 1 st direction is shorter than the length of the suction surface, and may have various sizes and shapes as long as the start point and the travel of suction of the mask M can be controlled in at least one direction or the diagonal direction of the 1 st direction and the 2 nd direction as shown in fig. 3 c. For example, the length of the suction surface may be substantially the same in the 1 st direction, which is the short side of the suction surface, and may be shorter than the length of the suction surface in the 2 nd direction, which is the long side of the suction surface.

As shown in fig. 3c (i) to (v), the magnetic force generating portion 33 may be disposed so that its position (a magnetic force application position or a position of an attraction start point described later) corresponds to the peripheral edge portion of the electrostatic chuck 24 when projected onto the attraction surface of the electrostatic chuck 24. For example, the magnetic force generating portion 33 is disposed to correspond to the peripheral edge portion on the long side of the electrostatic chuck 24. This enables the start point of mask chucking to be a part of the peripheral edge of the electrostatic chuck 24. However, the present invention is not limited to the configurations shown in fig. 3c (i) to (v), and the magnetic force generating portion 33 may be provided at a position corresponding to the peripheral portion on the short side of the electrostatic chuck 24, or may be disposed at other positions (e.g., 3c (vi) to (viii)) other than the peripheral portion, such as a position corresponding to the central portion of the electrostatic chuck 24.

In the present embodiment, the magnetic force generating unit 33 is provided so as to be movable in a direction including a direction parallel to the suction surface of the electrostatic chuck 24. For example, the magnetic force generating unit 33 is provided movably in a direction (1 st direction) parallel to the short side of the suction surface of the electrostatic chuck 24.

By providing the magnetic force generating unit 33 so as to be movable in a direction parallel to the suction surface in this way, the suction advancing direction of the mask M can be controlled more precisely. That is, as the magnetic force generating unit 33 moves in the direction parallel to the suction surface of the electrostatic chuck 24, the portion of the mask M attracted by the magnetic force generating unit 33 moves, and thus the suction traveling direction of the mask M can be precisely controlled.

The moving direction of the magnetic force generating unit 33 is not limited to the 1 st direction which is the short side direction of the electrostatic chuck 24, and may be any direction. For example, the electrostatic chuck 24 may be moved in the 2 nd direction, which is the longitudinal direction thereof, or may be moved in the diagonal direction. The movement of the magnetic force generating unit 33 is not limited to the linear movement, and may be a curved movement, or may be a movement in which the direction is changed during the movement.

The mask attracting travel can be controlled more precisely by variously combining the shape of the magnetic force generating portion 33, the arrangement position within the plane parallel to the attracting surface (the position of the magnetic force application position or the position of the attraction start point described later), and the moving direction within the plane parallel to the attracting surface.

For example, when the magnetic force generating portion 33 is formed to be shorter than the length of the suction surface of the electrostatic chuck 24 in the 1 st direction and is disposed on the peripheral edge portion on the long side, the movement direction of the magnetic force generating portion 33 is made parallel to the 1 st direction, whereby it is possible to control the mask M to be sequentially sucked from the peripheral edge portion on one long side toward the peripheral edge portion on the other long side.

When the magnetic force generating unit 33 is formed shorter than the length of the suction surface of the electrostatic chuck 24 in both the 1 st direction and the 2 nd direction, the arrangement position of the magnetic force generating unit 33 (the position of a magnetic force application position or a suction start point described later) and the moving direction of the magnetic force generating unit 33 can be controlled so as to perform suction in either the 1 st direction or the 2 nd direction or in the diagonal direction.

In order to drive the magnetic force generating unit 33 in a direction parallel to the suction surface of the electrostatic chuck 24, the electrostatic chuck system 30 of the present embodiment includes a magnetic force generating unit driving mechanism 35. For example, as shown in fig. 3d, the magnetic force generating unit driving mechanism 35 can be realized by a motor and a ball screw, but the present invention is not limited thereto, and other members may be used as long as the magnetic force generating unit 33 can be moved in the direction parallel to the attraction surface. For example, a motor and a rack/pinion gear may be used to drive the magnetic force generating portion 33.

The magnetic force generating unit 33 may be provided so as to be movable between a magnetic force application position, which is a position where a magnetic force can be applied to the mask M, and a retracted position away from the mask M with respect to the magnetic force application position. While the magnetic force generating portion 33 is located at the magnetic force applying position, the portion of the mask M corresponding to the position of the magnetic force generating portion 33 is attracted toward the magnetic force generating portion 33, i.e., toward the electrostatic chuck 24 by the magnetic force from the magnetic force generating portion 33, and is deformed so as to be closer to the lower surface of the substrate S attracted to the lower surface of the electrostatic chuck 24 than the other portions of the mask M (i.e., deformed in a direction perpendicular to the main surface of the mask M). Thereby, the magnetic force generating unit 33 can control the start point of mask suction. When the magnetic force generating unit 33 is located at the retracted position, the magnetic force acting on the mask M is relatively weak, and only a small magnetic force to the extent that the mask M cannot be attracted is exerted, or the magnetic force does not substantially act.

The magnetic force application position and the retracted position can be set to be separated from each other in a direction parallel to the suction surface of the electrostatic chuck. For example, as shown in fig. 3d, the retracted position of the magnetic force generating unit 33 may be a position away from the upper surface of the electrostatic chuck 24 in the 1 st direction (the longitudinal direction of the electrostatic chuck 24, the Y direction) from the magnetic force applying position. That is, the retracted position and the magnetic force application position can be substantially positioned on a plane parallel to the suction surface. In this case, the magnetic force does not substantially act in the direction perpendicular to the main surface of the mask M, and the mask M is not substantially deformed.

When the retracted position and the magnetic force application position of the magnetic force generating unit 33 are located on the plane parallel to the adsorption surface, the mechanism for driving the magnetic force generating unit 33 between the magnetic force application position and the retracted position and the magnetic force generating unit driving mechanism 35 for controlling the adsorption direction of the mask M can be implemented as one driving mechanism.

However, the present invention is not limited to this, and the magnetic force application position and the retracted position of the magnetic force generating unit 33 may be located at positions separated from each other in the vertical direction.

[ adsorption method based on Electrostatic chuck System ]

Hereinafter, a method of attracting the substrate S and the mask M to the electrostatic chuck 24 will be described with reference to fig. 4a to 4 c.

Fig. 4a illustrates a process of attracting the substrate S to the electrostatic chuck 24 (the 1 st attraction stage).

In the present embodiment, as shown in fig. 4a, the entire surface of the substrate S is not simultaneously attracted to the lower surface of the electrostatic chuck 24, but is sequentially attracted from one end to the other end along the 1 st side (short side) of the electrostatic chuck 24. However, the present invention is not limited to this, and for example, the substrate may be attracted from one corner of the diagonal line of the electrostatic chuck 24 to the other corner facing the one corner.

In order to sequentially attract the substrate S along the 1 st side of the electrostatic chuck 24, the order of applying the 1 st potential difference for substrate attraction to the plurality of sub-electrode portions 241 to 249 may be controlled, or the 1 st potential difference may be simultaneously applied to the plurality of sub-electrode portions, but the structure and the supporting force of the supporting portion of the substrate supporting unit 22 for supporting the substrate S are different.

Fig. 4a shows an embodiment in which the substrate S is sequentially attracted to the electrostatic chuck 24 by controlling the potential difference applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24. Here, the 3 sub-electrode portions 241, 244, and 247 arranged along the longitudinal direction (Y direction) of the electrostatic chuck 24 constitute the 1 st attraction portion 41, the 3 sub-electrode portions 242, 245, and 248 at the center of the electrostatic chuck 24 constitute the 2 nd attraction portion 42, and the remaining 3 sub-electrode portions 243, 246, and 249 constitute the 3 rd attraction portion 43.

The potential difference control unit 32 controls to sequentially apply the 1 st potential difference (Δ V1) from the 1 st suction unit 41 toward the 3 rd suction unit 43 along the 1 st side (width) of the electrostatic chuck 24. In order to reliably attract the substrate S to the electrostatic chuck 24, the 1 st potential difference (Δ V1) is set to a sufficiently large potential difference.

Accordingly, the attraction of the substrate S to the electrostatic chuck 24 proceeds from the side of the substrate S corresponding to the 1 st attraction section 41 toward the 3 rd attraction section 43 side via the center section of the substrate S (i.e., the attraction of the substrate S is performed in the X direction), and the substrate S is attracted smoothly to the electrostatic chuck 24 without leaving wrinkles in the center section of the substrate.

At a predetermined timing after the step of attracting the substrate S to the electrostatic chuck 24 (the 1 st attraction stage) is completed, the potential difference control unit 32 reduces the potential difference applied to the electrode portion of the electrostatic chuck 24 from the 1 st potential difference (Δ V1) to the 2 nd potential difference (Δ V2) smaller than the 1 st potential difference (Δ V1), as shown in fig. 4 b.

The 2 nd potential difference (Δ V2) is a suction maintaining potential difference for maintaining the substrate S in a state of being sucked by the electrostatic chuck 24, and is a potential difference lower than the 1 st potential difference (Δ V1) applied when the substrate S is sucked by the electrostatic chuck 24. Even if the potential difference applied to the electrostatic chuck 24 is reduced to the 2 nd potential difference (Δ V2), the substrate S is once adsorbed to the electrostatic chuck 24 by the 1 st potential difference (Δ V1), and then the adsorbed state of the substrate can be maintained even if the 2 nd potential difference (Δ V2) lower than the 1 st potential difference (Δ V1) is applied.

In this way, after the potential difference applied to the electrode portion of the electrostatic chuck 24 is decreased to the 2 nd potential difference, the relative position of the substrate S adsorbed on the electrostatic chuck 24 and the mask M supported by the mask supporting unit 23 is adjusted (aligned).

The magnetic force generating unit 33 may be held at the retracted position during the process from the start of the substrate S suction by the electrostatic chuck 24 to the substrate alignment. This makes it possible to perform the adsorption of the substrate S and the alignment of the substrate without attracting the mask M by substantially not applying the magnetic force from the magnetic force generating unit 33 to the mask M.

Next, as shown in fig. 4c, the electrostatic chuck 24 is made to attract the mask M through the substrate S. That is, the mask M is attracted to the lower surface of the substrate S attracted to the electrostatic chuck 24.

Therefore, first, the electrostatic chuck 24 to which the substrate S is attracted is lowered toward the mask M by the electrostatic chuck Z actuator 28. The electrostatic chuck 24 is lowered to an extreme position where the electrostatic attraction force generated by the attraction hold potential difference (2 nd potential difference, Δ V2) applied to the electrostatic chuck 24 does not act on the mask M.

In a state where the electrostatic chuck 24 is lowered to the limit position, the magnetic force generating portion 33 moves from the retreat position to the magnetic force applying position. When the magnetic force generating portion 33 moves to the magnetic force applying position, the magnetic force applied from the magnetic force generating portion 33 in the direction perpendicular to the main surface of the mask M is sufficiently large, and the portion of the mask M corresponding to the position of the magnetic force generating portion 33 is attracted upward by the magnetic force. This forms a starting point for the subsequent adsorption of the mask M to the electrostatic chuck 24.

In a state where the portion of the mask M corresponding to the position of the magnetic force generating unit 33 is attracted by the magnetic force, the potential difference control unit 32 controls so that the 3 rd potential difference (Δ V3) is applied to the electrode portion of the electrostatic chuck 24.

The 3 rd potential difference (Δ V3) is preferably larger than the 2 nd potential difference (Δ V2) and is preferably so large that the mask M can be charged by electrostatic induction through the substrate S. Thereby, the mask M is attracted to the electrostatic chuck 24 via the substrate S. In particular, at the adsorption start point of the mask M formed by the magnetic force generating unit 33, the mask M is closest to the electrostatic chuck 24, and therefore, the mask M is first adsorbed by the electrostatic chuck 24.

However, the present invention is not limited to this, and the 3 rd potential difference (Δ V3) may have the same magnitude as the 2 nd potential difference (Δ V2). Even if the 3 rd potential difference (Δ V3) has the same magnitude as the 2 nd potential difference (Δ V2), the relative distance between the electrostatic chuck 24 or the substrate S and the mask M can be shortened by the lowering of the electrostatic chuck 24 to the limit position and the attraction of the magnetic force generating unit 33 to the mask M as described above, and therefore, the mask M can be electrostatically induced by the polarization charge electrostatically induced to the substrate, and an attraction force can be obtained to such an extent that the mask M can be attracted to the electrostatic chuck 24 via the substrate.

The 3 rd potential difference (Δ V3) may be smaller than the 1 st potential difference (Δ V1), or may be set to a magnitude that is approximately equal to the 1 st potential difference (Δ V1) in consideration of shortening of the process time (tact).

The mask M may be attracted by the magnetic force generating unit 33, and after a predetermined potential difference is applied to the electrode portion of the electrostatic chuck 24 by the potential difference control unit 32, the electrostatic chuck 24 to which the substrate S is attracted may be further lowered toward the mask M by the electrostatic chuck Z actuator 28. This can shorten the relative distance between the substrate S and the mask M, and promote the adsorption of the mask M. At this time, the magnetic force generating unit 33 may be further lowered together with the electrostatic chuck 24.

In the mask chucking step shown in fig. 4c, after the magnetic force generating unit 33 forms the chucking start point of the mask M, the magnetic force generating unit 33 is moved from the magnetic force applying position in a direction parallel to the chucking surface of the electrostatic chuck 24, for example, in the 1 st direction.

As the magnetic force generating portion 33 moves in the direction parallel to the suction surface of the electrostatic chuck 24, the portion of the mask M corresponding to the position of the magnetic force generating portion 33 is sequentially attracted toward the electrostatic chuck 24. At this time, the potential difference control unit 32 sequentially applies the 3 rd potential difference (Δ V3) from the 1 st adsorption unit 41 toward the 3 rd adsorption unit 43 along the 1 st side (i.e., along the 1 st direction) in accordance with the movement of the magnetic force generating unit 33.

That is, as shown in fig. 4c, control is performed such that the 3 rd potential difference is applied to the 1 st attraction section 41 corresponding to the attraction start point (magnetic force application position) by the magnetic force generation section 33, then the 3 rd potential difference is applied to the 2 nd attraction section 42 when the magnetic force generation section 33 moves from the magnetic force application position in the 1 st direction to the position corresponding to the 2 nd attraction section 43, and the 3 rd potential difference is applied to the 3 rd attraction section 43 when the magnetic force generation section 33 moves to the position corresponding to the 2 nd attraction section 43.

Accordingly, the mask M is attracted to the electrostatic chuck 24 from the side of the mask M corresponding to the 1 st attraction section 41, which becomes the starting point of attraction of the mask M, toward the 3 rd attraction section 43 side through the center portion of the mask M (i.e., the mask M is attracted in the X direction), and the mask M is attracted to the electrostatic chuck 24 in a flat state without leaving wrinkles in the center portion of the mask M (the 2 nd attraction stage).

However, the present invention is not limited to the embodiment shown in fig. 4c, and for example, the 3 rd potential difference (Δ V3) may be applied to the entire electrostatic chuck 24 at the same time. That is, since the mask suction starting point is already formed by the magnetic force generating unit 33, even if the 3 rd potential difference is applied to the entire electrostatic chuck 24 at the same time, suction is performed first at the starting point of mask suction closest to the electrostatic chuck 24, and then, as the magnetic force generating unit 33 moves in the direction parallel to the suction surface, the mask portions at the corresponding positions are sequentially sucked by the magnetic force generating unit, and thus, suction of the mask is sequentially performed along the 1 st side.

In this way, after the entire mask M is attracted by the electrostatic attraction of the electrostatic chuck 24 through the substrate S, the magnetic force generating unit 33 is moved to the retracted position, and the magnetic force acting in the direction perpendicular to the main surface of the mask M is reduced by the magnetic force generating unit 33. Even if the magnetic force generator 33 is moved to the retracted position to reduce the magnetic force acting on the mask M, the mask M can be stably maintained in the attracted state by the electrostatic attraction of the electrostatic chuck 24.

According to the above-described embodiment of the present invention, in the mask chucking step in which the electrostatic chuck 24 is made to chuck the mask M through the substrate S, after the start point of the mask chucking is formed by sucking a part of the mask M by the magnetic force generating unit 33 having an area smaller than the chucking surface of the electrostatic chuck 24, the mask is sequentially chucked from the formed chucking start point by applying a potential difference for the mask chucking to the electrostatic chuck 24 while moving the magnetic force generating unit 33 in a direction parallel to the chucking surface of the electrostatic chuck 24. This allows the electrostatic chuck 24 to attract the mask M through the substrate S without leaving wrinkles.

[ film Forming Process ]

A film formation method using the adsorption method according to the present embodiment will be described below.

In a state where the mask M is placed on the mask support unit 23 in the vacuum chamber 21, the substrate is carried into the vacuum chamber 21 of the film deposition apparatus 11 by the carrier robot 14 of the carrier chamber 13.

The robot hand of the transfer robot 14 that has entered the vacuum chamber 21 places the substrate S on the support portion of the substrate support unit 22.

Next, the electrostatic chuck 24 is lowered toward the substrate S, and after sufficiently approaching or coming into contact with the substrate S, the 1 st potential difference (Δ V1) is applied to the electrostatic chuck 24, and the substrate S is attracted.

After the attraction of the substrate to the electrostatic chuck 24 is completed, the potential difference applied to the electrostatic chuck 24 is decreased from the 1 st potential difference (Δ V2) to the 2 nd potential difference (Δ V2). Even if the potential difference applied to the electrostatic chuck 24 is reduced to the 2 nd potential difference (Δ V2), the attraction state of the electrostatic chuck 24 to the substrate can be maintained in the subsequent process.

In a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative positional deviation of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to reliably prevent the substrate from falling off the electrostatic chuck 24 during the lowering of the substrate attracted to the electrostatic chuck 24, the potential difference applied to the electrostatic chuck 24 may be reduced to the 2 nd potential difference (Δ V2) after the lowering of the substrate is completed (i.e., immediately before the start of the alignment process described later).

When the substrate S is lowered to the measurement position, the alignment marks formed on the substrate S and the mask M are imaged by the alignment camera 20, and the relative positional deviation between the substrate and the mask is measured. In another embodiment of the present invention, in order to further improve the accuracy of the measurement step of the relative position between the substrate and the mask, the potential difference applied to the electrostatic chuck 24 may be reduced to the 2 nd potential difference after the measurement step for alignment is completed (during the alignment step).

When it is found that the relative positional deviation of the substrate with respect to the mask exceeds the threshold value as a result of the measurement, the substrate S in the state of being attracted to the electrostatic chuck 24 is moved in the horizontal direction (XY θ direction), and the position of the substrate with respect to the mask is adjusted (aligned). In another embodiment of the present invention, after the completion of the position adjustment step, the potential difference applied to the electrostatic chuck 24 may be reduced to the 2 nd potential difference (Δ V2). This can further improve the accuracy in the entire alignment process (relative position measurement or position adjustment).

After the alignment process, the electrostatic chuck 24 is lowered toward the mask M and moved to the extreme position. In the extreme position, the 2 nd potential difference applied to the electrostatic chuck 24 does not charge the mask M, and substantially no electrostatic attractive force acts on the mask M.

In this state, the magnetic force generating unit 33 is moved to the magnetic force application position. When the magnetic force generating portion 33 reaches the magnetic force applying position, a portion of the mask M corresponding to the position of the magnetic force generating portion 33 is attracted upward by the magnetic force applied to the mask M from the magnetic force generating portion 33. Thereby, a start point of mask suction is formed.

In this state, while the magnetic force generating unit 33 is moved in the direction parallel to the suction surface of the electrostatic chuck 24, the 3 rd potential difference (Δ V3) is applied to the entire electrostatic chuck or the suction portion corresponding to the mask suction start point in order, and the corresponding portion of the mask M is sucked through the substrate S. The mask M is sequentially sucked from the above-mentioned suction starting point, and the mask M is sucked to the electrostatic chuck 24 without leaving wrinkles. As described above, after the start point of mask suction is formed, the electrostatic chuck 24 to which the substrate S is sucked may be further lowered toward the mask M by the electrostatic chuck Z actuator 28.

After the entire mask M is attracted by the application of the 3 rd potential difference, the magnetic force generating unit 33 is moved from the magnetic force application position to the retracted position.

Thereafter, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is reduced to the 4 th potential difference (Δ V4) which is a potential difference capable of maintaining the substrate and the mask in a state of being attracted to the electrostatic chuck 24. This can reduce the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the film formation process is completed.

Next, the shutter of the vapor deposition source 25 is opened, and the vapor deposition material is deposited on the substrate S through the mask.

After vapor deposition to a desired thickness, the potential difference applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is reduced to the 5 th potential difference (Δ V5), the mask M is separated, and the substrate is raised by the electrostatic chuck Z actuator 28 in a state where only the substrate is attracted to the electrostatic chuck 24.

Next, the robot hand of the transfer robot 14 enters the vacuum chamber 21 of the film deposition apparatus 11, and a potential difference of zero (0) or an opposite polarity is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24, so that the electrostatic chuck 24 is separated from the substrate and ascends. Then, the deposition-completed substrate is carried out of the vacuum chamber 21 by the transfer robot 14.

In the above description, the film deposition apparatus 11 is configured to perform film deposition in a state where the film deposition surface of the substrate S is oriented vertically downward, that is, in a so-called vapor deposition upward (upward deposition), but is not limited to this, and may be configured to perform film deposition in a state where the substrate S is disposed in a state where it stands vertically on the side surface side of the vacuum chamber 21 and the film deposition surface of the substrate S is parallel to the direction of gravity.

[ method for manufacturing electronic device ]

Next, an example of a method for manufacturing an electronic device using the film formation apparatus of the present embodiment will be described. Hereinafter, a structure and a manufacturing method of an organic EL display device are exemplified as an example of an electronic device.

First, an organic EL display device to be manufactured is explained. Fig. 5(a) shows an overall view of the organic EL display device 60, and fig. 5(b) shows a cross-sectional structure of 1 pixel.

As shown in fig. 5(a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of an organic EL display device 60. As will be described in detail later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel herein refers to the smallest unit that can display a desired color in the display region 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is configured by a combination of the 1 st light-emitting element 62R, the 2 nd light-emitting element 62G, and the 3 rd light-emitting element 62B which display different light emissions from each other. The pixel 62 is often configured by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be configured by a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as at least 1 color or more is provided.

Fig. 5(B) is a partial cross-sectional view at the line a-B of fig. 5 (a). The pixel 62 has an organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. Among them, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red light, green light, and blue light, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transporting layer 65, the electron transporting layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, an insulating layer 69 is provided between the anodes 64 in order to prevent the anodes 64 and the cathodes 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In fig. 5(b), the hole transporting layer 65 and the electron transporting layer 67 are illustrated as one layer, but a plurality of layers including a hole blocking layer and an electron blocking layer may be formed depending on the structure of the organic EL display element. Further, a hole injection layer having a band structure in which holes can be smoothly injected from the anode 64 into the hole transport layer 65 can be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing the organic EL display device will be specifically described.

First, a circuit (not shown) for driving the organic EL display device and a substrate 63 on which an anode 64 is formed are prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the insulating layer 69 is formed by patterning the acrylic resin so as to form an opening in the portion where the anode 64 is formed by photolithography. The opening corresponds to a light-emitting region where the light-emitting element actually emits light.

The substrate 63 on which the insulating layer 69 is patterned is carried into the 1 st organic material film forming apparatus, and the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display region. The hole transport layer 65 is formed by vacuum evaporation. In practice, since the hole transporting layer 65 is formed to have a size larger than the display region 61, a high-definition mask is not required.

Next, the substrate 63 on which the hole transport layer 65 has been formed is carried into the 2 nd organic material film forming apparatus and held by the electrostatic chuck. The substrate is placed on the mask by aligning the substrate with the mask, and a light-emitting layer 66R that emits red light is formed on a portion of the substrate 63 where an element that emits red light is disposed.

Similarly to the formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green light is formed by the 3 rd organic material film-forming device, and the light-emitting layer 66B emitting blue light is formed by the 4 th organic material film-forming device. After the completion of the formation of the light-emitting layers 66R, 66G, and 66B, the electron transport layer 67 is formed in the entire display region 61 by the 5 th film forming apparatus. The electron transport layer 67 is formed as a common layer for the light emitting layers 66R, 66G, and 66B of 3 colors.

The substrate on which the electron transport layer 67 has been formed is moved to a metallic vapor deposition material film formation apparatus, and the cathode 68 is formed.

According to the present invention, the substrate and/or the mask are sucked and held by the electrostatic chuck 24, but when the mask is sucked, the magnetic force generating unit 33 forms a suction starting point and moves the magnetic force generating unit 33 in a direction parallel to the suction surface, whereby the mask can be sucked to the electrostatic chuck 24 without wrinkles.

Thereafter, the substrate is moved to a plasma CVD apparatus to form a protective film 70, thereby completing the organic EL display apparatus 60.

When the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light-emitting layer made of an organic EL material may be deteriorated by moisture and oxygen. Therefore, in this example, the substrate is carried in and out between the film deposition apparatuses in a vacuum atmosphere or an inert gas atmosphere.

The above embodiment shows an example of the present invention, but the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea thereof.